JPH0357370A - Semiconductor light receiving device - Google Patents
Semiconductor light receiving deviceInfo
- Publication number
- JPH0357370A JPH0357370A JP1193496A JP19349689A JPH0357370A JP H0357370 A JPH0357370 A JP H0357370A JP 1193496 A JP1193496 A JP 1193496A JP 19349689 A JP19349689 A JP 19349689A JP H0357370 A JPH0357370 A JP H0357370A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- light receiving
- signal
- receiving device
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 abstract 1
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HODRFAVLXIFVTR-RKDXNWHRSA-N tevenel Chemical compound NS(=O)(=O)C1=CC=C([C@@H](O)[C@@H](CO)NC(=O)C(Cl)Cl)C=C1 HODRFAVLXIFVTR-RKDXNWHRSA-N 0.000 description 2
- 208000035795 Hypocalcemic vitamin D-dependent rickets Diseases 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 208000033584 type 1 vitamin D-dependent rickets Diseases 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1581—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation using linear image-sensor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1575—Picture signal readout register, e.g. shift registers, interline shift registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Facsimile Heads (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Scanning Arrangements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光照射された原稿からの反射光を受けて電気
信号に変換する半導体受光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor light receiving device that receives reflected light from a document irradiated with light and converts it into an electrical signal.
本発明は、一導電型の単結晶基板上に光電変換用半導体
受光素子（以下、受光素子と称す。）及び前記受光素子
の出力信号を順次読み出す読み取り回路及び前記出力信
号を電圧変換する増幅回路及び定電圧を供給するボルテ
ージレギュレーターが形成された半導体受光装置であり
、読み取り回路で発生するスイッチングノイズを小さく
する為に、読み取り回路及び受光素子は、内蔵されたボ
ルテージレギュレーターから供給された低電圧で駆動さ
れるものである。スイッチングノイズが減ることにより
、半導体受光装置のＳ／Ｎ比が向上する。更に読み取り
回路を低電圧で駆動するために低消費電流となる。The present invention provides a semiconductor light-receiving element for photoelectric conversion (hereinafter referred to as a light-receiving element) on a single-crystal substrate of one conductivity type, a reading circuit that sequentially reads output signals of the light-receiving element, and an amplifier circuit that converts the output signal into voltage. This semiconductor photodetector is equipped with a voltage regulator that supplies a constant voltage and a constant voltage.In order to reduce switching noise generated in the reading circuit, the reading circuit and photodetector are equipped with a low voltage supplied from the built-in voltage regulator. It is driven. By reducing switching noise, the S/N ratio of the semiconductor light receiving device is improved. Furthermore, since the reading circuit is driven at a low voltage, current consumption is low.
第２図は、従来の半導体受光装置の回路図である。半導
体受光装置に入射した光は、受光素子群１により、電気
信号に変換される。しかしながら、受光素子群１で変換
された電気信号は微弱である為、読み取り回路２で発生
する雑音の影響を受けやすい。FIG. 2 is a circuit diagram of a conventional semiconductor light receiving device. Light incident on the semiconductor light receiving device is converted into an electrical signal by the light receiving element group 1. However, since the electrical signal converted by the light receiving element group 1 is weak, it is easily affected by noise generated in the reading circuit 2.
アナログスイッチをＭＯＳトランジスタＴＧｎで形成し
た場合、ゲート・ドレイン間の寄生容量を介して過疫応
答時のスパイク雑きが受光素子Ｓｎの信号に変動を与え
る。この雑音は、高い電源電圧でＭＯＳトランジスタＴ
Ｇｎを駆動する程大きくなる。When the analog switch is formed of a MOS transistor TGn, spike noise during a transient response causes fluctuations in the signal of the light receiving element Sn via the parasitic capacitance between the gate and drain. This noise is caused by the MOS transistor T at high power supply voltage.
It becomes larger as Gn is driven.
出力電圧が外部負荷容量及び外部負荷抵抗による低下を
防ぐ為に受光素子群１の電気信号を電圧変換する方式が
拡く用いられている。電圧変換には、一般にソースフオ
ロア回路、演算増幅回路（以下Ｔｆｐ Ａｍｐと称す
。）が使用されている。In order to prevent the output voltage from decreasing due to external load capacitance and external load resistance, a method of converting the electric signal of the light receiving element group 1 into voltage is widely used. A source follower circuit and an operational amplifier circuit (hereinafter referred to as Tfp Amp) are generally used for voltage conversion.
しかしながら、σｐ Ａｍｐは、受光素子の信号出力
を歪みなく伝送するために、広いダイナミックレンジが
必要である。Ｕｐ Ａｍｐのダイナミックレンジは、
電源電圧の大きさにより変化する。電源電圧が高い程、
ダイナミックレンジは広くとれる。一方、読み取り回路
の電源電圧を高くすると、前述のように、寄生容量及び
ゲート・ドレイン容量を介して、信号線に飛び込む雑音
が大きくなり、Ｓ／Ｎ比の低下になってしまう。つまり
、従来の半導体受光装置を駆動する電源電圧が高いと、
雑音が増し、低いとダイナミックレンジが狭くなり、満
足な特性が得られなかった。However, σp Amp requires a wide dynamic range in order to transmit the signal output of the light receiving element without distortion. The dynamic range of Up Amp is
Varies depending on the power supply voltage. The higher the power supply voltage,
The dynamic range is wide. On the other hand, if the power supply voltage of the reading circuit is increased, as described above, the noise that enters the signal line through the parasitic capacitance and gate-drain capacitance increases, resulting in a decrease in the S/N ratio. In other words, if the power supply voltage that drives a conventional semiconductor photodetector is high,
Noise increased, and when it was low, the dynamic range narrowed, making it impossible to obtain satisfactory characteristics.
上記課題を解決するために、本発明は、σｐＡｒｎｐと
読み取り回路を異った２つの電源電圧で駆動できるよう
にしたものである。電源電圧値はＵｐ Ａｍｐの方を
高くする。また、読み取り回路及び受光素子の電源電圧
は、同一単結晶基板に形成されたボルテージレギュレー
ターから与えられるようにした。前記ボルテージレギュ
レーターは、前記Ｔｆｐ Ａｍｐの電源電圧を使用す
るため、半導体受光装置に与える電圧は１つである。前
記ボルテージレギュレーターは形戒する為に製造プロセ
スの変更はない。In order to solve the above problems, the present invention enables the σpArnp and the reading circuit to be driven with two different power supply voltages. The power supply voltage value is set higher for Up Amp. Further, the power supply voltage for the reading circuit and the light receiving element is supplied from a voltage regulator formed on the same single crystal substrate. Since the voltage regulator uses the power supply voltage of the Tfp Amp, only one voltage is applied to the semiconductor photodetector. There is no change in the manufacturing process of the voltage regulator as it is a formal product.
上記の様に受光素子、読み取り回路、σｐＡｍｐ及びボ
ルテージレギュレーターを同一単結晶基板に形成するこ
とにより、広いダイナミックレンジを有し、雑音が少な
く、高いＳ／Ｎ比も有する半導体受光装置が得られる。By forming the light receiving element, reading circuit, σpAmp, and voltage regulator on the same single crystal substrate as described above, a semiconductor light receiving device having a wide dynamic range, low noise, and a high S/N ratio can be obtained.
また読み取り回路を従来よりも低い電源電圧で駆動する
ので、低消費電流となる。Furthermore, since the reading circuit is driven with a lower power supply voltage than conventional ones, current consumption is low.
以下、本発明について実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は、本発明の半導体受光装置の一実施例の回路図
である。一導電型単結晶半導体基板に受光素子１、読み
取り回路２、Ｔｆｐ Ａｍｐ３及びボルテージレギュ
レータ４を形成する。読み取り回路２は、リセットトラ
ンジスタＴＲｎ，｝ランスミッションゲートＴＧｎ，及
びシフトレジスタＳＲｎ等で構成されている。リセット
トランジスタＴＲｎは、各受光素子を一定電圧にリセッ
トするものである。FIG. 1 is a circuit diagram of an embodiment of the semiconductor light receiving device of the present invention. A light receiving element 1, a reading circuit 2, a Tfp Amp 3, and a voltage regulator 4 are formed on a single conductivity type single crystal semiconductor substrate. The reading circuit 2 includes a reset transistor TRn, a transmission gate TGn, a shift register SRn, and the like. The reset transistor TRn resets each light receiving element to a constant voltage.
信号の読み出しは、以下のように行なわれる。Signal reading is performed as follows.
シフトレジスタＳＲＩの出力を受けて動作状態になった
トランスミッションゲートＴＲＩを通して、受光素子Ｓ
１の信号が出力される。信号はσｐＡｍｐ３で増幅され
外部へ出力される。シフトレジスタＳＲＩのデータが次
段へ移動し、受光素子の信号は、順次出力されていく。The light-receiving element S
1 signal is output. The signal is amplified by σpAmp3 and output to the outside. The data in the shift register SRI is moved to the next stage, and the signals of the light receiving elements are sequentially output.
読み出し回路及び受光素子の電源電圧Ｖ ＤＤ２は、内
蔵されたボルテージレギュレーター４から供給されてい
る。前記ボルテージレギュレーター４は、電源電圧ｖＤ
Ｄ１で駆動されている。この電圧は、？ＴｐＡｍｐ３の
電源電圧と同じにすることが設計可能であるため、半導
体受光装置に供給する電圧は１つだけでよい。また本発
明を実施するには、ＶＤＤＩ＞ＶＤＤ２とする。The power supply voltage VDD2 for the readout circuit and the light receiving element is supplied from a built-in voltage regulator 4. The voltage regulator 4 has a power supply voltage vD
It is driven by D1. What is this voltage? Since it is possible to design the voltage to be the same as the power supply voltage of TpAmp3, only one voltage is required to be supplied to the semiconductor light receiving device. Further, in order to implement the present invention, it is assumed that VDDI>VDD2.
尚、本発明は、Ｃ−ＭσＳトランジスタにより、読み取
り回路を構威した実施例を示したが、バイボーラトラン
ジスタ等で構成することも可能である。また、σｐ
Ａｍｐ３ボルテージレギュレーター４も、ＣＭσＳトラ
ンジスタ、あるいは、バイボーラトランジスタでも作成
できることは、明らかである。したがって、従来と製造
プロセスを変更する必要もなく、本発明を実施するため
に工程が増すこともない。Although the present invention has shown an embodiment in which the reading circuit is made up of C-MσS transistors, it is also possible to use bibolar transistors or the like. Also, σp
It is clear that the Amp3 voltage regulator 4 can also be made of a CMσS transistor or a bibolar transistor. Therefore, there is no need to change the conventional manufacturing process, and no additional steps are required to implement the present invention.
以上のように、本発明によれば、読み取り回路の駆動電
圧を低くすることにより、信号線の雑音が小さくなり、
高いＳ／Ｎ比が得られ、低消費電流であり広いダイナミ
ックレンジを持つ半導体受光装置が得られるという効果
がある。As described above, according to the present invention, by lowering the drive voltage of the reading circuit, noise in the signal line is reduced.
This has the effect of providing a semiconductor light receiving device that has a high S/N ratio, low current consumption, and a wide dynamic range.
第１図は本発明の半導体受光装置の一実施例を示した回
路図。第２図は、従来の半導体受光装置を示した回路図
である。
・受光素子群
・読み取り回路
●Ｔｆｐ Ａｍｐ
●ボルテージレギュレーター
以
上FIG. 1 is a circuit diagram showing an embodiment of the semiconductor light receiving device of the present invention. FIG. 2 is a circuit diagram showing a conventional semiconductor light receiving device.・Light receiving element group ・Reading circuit ●Tfp Amp ●Voltage regulator or higher
Claims (1)
み出す読み取り回路とがそれぞれ複数個と前記出力信号
を電圧変換する増幅回路及び定電圧を供給するボルテー
ジレギュレーターとが一導電型半導体基板に形成された
半導体受光装置であって、前記光電変換素子及び前記読
み取り回路は、前記ボルテージレギュレーターから供給
される電圧で駆動されることを特徴とする半導体受光装
置。A plurality of photoelectric conversion elements and a reading circuit that sequentially reads output signals of the photoelectric conversion element, an amplifier circuit that converts the output signal into voltage, and a voltage regulator that supplies a constant voltage are formed on a single conductivity type semiconductor substrate. 1. A semiconductor light receiving device, wherein the photoelectric conversion element and the reading circuit are driven by a voltage supplied from the voltage regulator.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1193496A JP2530226B2 (en) | 1989-07-25 | 1989-07-25 | Semiconductor light receiving device |
| EP19900307945 EP0410653A3 (en) | 1989-07-25 | 1990-07-20 | Semi-conductor image sensing device |
| US07/557,089 US5109155A (en) | 1989-07-25 | 1990-07-23 | Semiconductor image sensor with an integrated voltage regulator |
| KR1019900011234A KR100250697B1 (en) | 1989-07-25 | 1990-07-24 | Semiconductor image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1193496A JP2530226B2 (en) | 1989-07-25 | 1989-07-25 | Semiconductor light receiving device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0357370A true JPH0357370A (en) | 1991-03-12 |
| JP2530226B2 JP2530226B2 (en) | 1996-09-04 |
Family
ID=16309012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1193496A Expired - Lifetime JP2530226B2 (en) | 1989-07-25 | 1989-07-25 | Semiconductor light receiving device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5109155A (en) |
| EP (1) | EP0410653A3 (en) |
| JP (1) | JP2530226B2 (en) |
| KR (1) | KR100250697B1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993025005A1 (en) * | 1992-05-22 | 1993-12-09 | Indiana University Foundation | Area-efficient implication circuits for very dense lukasiewicz logic arrays |
| US5781233A (en) * | 1996-03-14 | 1998-07-14 | Tritech Microelectronics, Ltd. | MOS FET camera chip and methods of manufacture and operation thereof |
| EP0899946A3 (en) * | 1997-08-26 | 2001-08-16 | Eastman Kodak Company | Image sensor electronics |
| US7418032B2 (en) * | 2005-03-15 | 2008-08-26 | International Business Machines Corporation | Altering power consumption in communication links based on measured noise |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136763A (en) * | 1986-11-27 | 1988-06-08 | Mitsubishi Electric Corp | Image sensor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59201586A (en) * | 1983-04-28 | 1984-11-15 | Canon Inc | Image pickup device |
| JPS61124171A (en) * | 1984-11-20 | 1986-06-11 | Seiko Instr & Electronics Ltd | Semiconductor device |
| FR2593343B1 (en) * | 1986-01-20 | 1988-03-25 | Thomson Csf | MATRIX OF PHOTOSENSITIVE ELEMENTS AND ITS MANUFACTURING METHOD, READING METHOD THEREOF, AND APPLICATION OF THIS MATRIX TO IMAGE TAKING |
| JPS6333075A (en) * | 1986-07-26 | 1988-02-12 | Olympus Optical Co Ltd | Solid-state image pickup device |
| JPS63127656A (en) * | 1986-11-17 | 1988-05-31 | Ricoh Co Ltd | Image sensor driving circuit |
| JPH084129B2 (en) * | 1986-11-19 | 1996-01-17 | キヤノン株式会社 | Photoelectric conversion device |
| DE3710986A1 (en) * | 1987-04-01 | 1988-10-20 | Messerschmitt Boelkow Blohm | LIGHT SENSITIVE DETECTOR DEVICE |
-
1989
- 1989-07-25 JP JP1193496A patent/JP2530226B2/en not_active Expired - Lifetime
-
1990
- 1990-07-20 EP EP19900307945 patent/EP0410653A3/en not_active Withdrawn
- 1990-07-23 US US07/557,089 patent/US5109155A/en not_active Expired - Lifetime
- 1990-07-24 KR KR1019900011234A patent/KR100250697B1/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136763A (en) * | 1986-11-27 | 1988-06-08 | Mitsubishi Electric Corp | Image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100250697B1 (en) | 2000-04-01 |
| JP2530226B2 (en) | 1996-09-04 |
| EP0410653A2 (en) | 1991-01-30 |
| US5109155A (en) | 1992-04-28 |
| EP0410653A3 (en) | 1992-02-12 |
| KR910004013A (en) | 1991-02-28 |
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