JPH0356872A - Testing device for semiconductor device - Google Patents
Testing device for semiconductor deviceInfo
- Publication number
- JPH0356872A JPH0356872A JP1193540A JP19354089A JPH0356872A JP H0356872 A JPH0356872 A JP H0356872A JP 1193540 A JP1193540 A JP 1193540A JP 19354089 A JP19354089 A JP 19354089A JP H0356872 A JPH0356872 A JP H0356872A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- constant
- constant voltage
- source
- voltage source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000012360 testing method Methods 0.000 title claims abstract description 28
- 238000005259 measurement Methods 0.000 abstract description 16
- 238000010586 diagram Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体素子の試験装置に関し、特に゛1毛
導体素子の出力電圧を$llf度よくδ−1定すること
ができる半導体素子の試験装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a testing device for semiconductor devices, and in particular to a device for testing semiconductor devices that can accurately control the output voltage of a single conductor device by δ-1. This relates to testing equipment.
第4図は従来の半導体素子の試験装置を示す構戊図であ
る。披試験半導体素子の一例である三端rレギュレータ
1はテストヘッド2のソケット3に装着されている。図
示してはいないが、テス1・ヘッド2の内部には三端了
レギュレータ1の諸特性をilN定するのに必要な周辺
回路が組み込まれている。三端子レギュレータ1の入力
端子4,出力端T5およびGND端子6はテストヘッド
2およびケーブル7を介しテスタ8に接続されている。FIG. 4 is a block diagram showing a conventional semiconductor device testing apparatus. A three-end regulator 1, which is an example of a semiconductor device to be tested, is attached to a socket 3 of a test head 2. Although not shown, peripheral circuits necessary for determining various characteristics of the three-terminal regulator 1 are incorporated inside the test head 2. An input terminal 4, an output terminal T5, and a GND terminal 6 of the three-terminal regulator 1 are connected to a tester 8 via a test head 2 and a cable 7.
入力端子4は、テスタ8内部の+il変電圧源9を介し
GNDに、出力端子5はテスタ8内部のiiJ&電流源
10と電圧酊■Hの並列回路体を介しGNDに、GND
端子6はGNDに各々接続されている。The input terminal 4 is connected to GND through the +IL variable voltage source 9 inside the tester 8, and the output terminal 5 is connected to GND through the parallel circuit of iiJ & current source 10 and the voltage changer H inside the tester 8.
The terminals 6 are each connected to GND.
CPU部】1は、テスタ8内部に設けられており、テス
トヘッド2内部に設けられている+111定に必要な周
辺回路をバスライン100を介しコン1・ロールすると
ともに、テスタ8内部の可変電圧源9の電圧riri.
可変電流源10の電流値および電圧到VXの測定レンジ
をバスライン200を介しコントロールする。[CPU section] 1 is provided inside the tester 8, and controls the peripheral circuits necessary for +111 constant provided inside the test head 2 via the bus line 100, and also controls the variable voltage inside the tester 8. The voltage of source 9 riri.
The measurement range of the current value and voltage to VX of the variable current source 10 is controlled via the bus line 200.
次に動作について説明する。CPU部11からの指令に
よりテストヘッド2内部の周辺回路およびテスタ8内部
の可変電圧源9の電圧値等を所望のal定条(’Fに設
定ずる。このとき、二端了レギュレータ1の入力電圧は
可変電圧源9からケーブル7を介して与えられる。三端
了レギュレータ1の1”t (=:j条件は可変電流源
10からケーブル7を介してり,えられている。そして
、三端子レギュレータ1は可変電圧源9からの入力電圧
に応じた電圧を出力端了5から出力し、この出力電圧が
電圧旧■Hにより測定される。この場合、ソケット3の
コンタクト方式をケルビン方式にするなどして、ケーブ
ル7等が有する寄生抵抗成分によるalll定値への影
響を無視できるまで小さくし、かつケーブル7等が受け
る電磁誘導などの外乱ノイズの影響をシールド技術によ
り無視できるまで小さくてきたとすると、出力電圧測定
値のもつ誤差成分は、電圧,il■,の有する誤差成分
が主なものとなる。今、電圧計VMが、200mV,2
V,20Vの3つの川定レンジを有しており、そのil
N定誤差が次式で表わされるとする。Next, the operation will be explained. The voltage values of the peripheral circuits inside the test head 2 and the variable voltage source 9 inside the tester 8 are set to desired values ('F) according to commands from the CPU section 11. At this time, the input of the two-terminal regulator 1 The voltage is applied from a variable voltage source 9 through a cable 7.The voltage is applied from a variable current source 10 through a cable 7.The voltage is applied from a variable current source 10 through a cable 7. The terminal regulator 1 outputs a voltage corresponding to the input voltage from the variable voltage source 9 from the output terminal 5, and this output voltage is measured by the voltage H. In this case, the contact method of the socket 3 is changed to the Kelvin method. By doing so, the influence of the parasitic resistance component of the cable 7, etc. on the ALL constant value has been reduced to a negligible value, and the influence of disturbance noise such as electromagnetic induction, which the cable 7, etc. are subjected to, has been reduced to a negligible value by shielding technology. Then, the error component of the output voltage measurement value is mainly the error component of the voltage, il,.Now, the voltmeter VM is 200mV, 2
It has three voltage ranges of V and 20V, and its illumination
Assume that the N constant error is expressed by the following equation.
(測定誤差)一(測定値) X O.1 (%)+(A
PI定レンジ)XO.l(%)
・・・0〉
なお、 (1)式に示した 0.1(%)という値は一
例であり、実際には使用する電圧i1■,のもっ固有の
値に置き換えられる。(Measurement error) - (Measurement value) X O. 1 (%) + (A
PI fixed range)XO. l(%)...0> Note that the value of 0.1(%) shown in equation (1) is just an example, and in reality, it can be replaced with a more specific value of the voltage i1 to be used.
例えば、三端子レギュレータ1の出力電圧の測定値が1
0.100 ( V )であるとする。このとき、電圧
illvHの測定レンジは20Vに設定されており、こ
のようにすると、a−1定誤差は (1)式により、(
JFJ定誤差) −10.100 (V) x O.
1 (%)+20 (V) x O,1 (%)
− 0.0301 ( V )90.03 ( V )
となる。つまり、電圧計VMのJl定誤差は最悪の場合
±o.oa ( v )となり、実際の三端了レギュラ
タ1の出力電圧は10.070 ( V )〜10.1
30 ( V )の範四に存在することになる。従って
、AFl定における許容誤差が±0.03(V)以上の
場合、この電圧引VMはそのまま使用できるが、許容誤
差が±0.03(V)未満である場合、電圧計VMを精
度の高いものに変更する必要がある。For example, if the measured value of the output voltage of three-terminal regulator 1 is 1
Assume that it is 0.100 (V). At this time, the measurement range of the voltage illvH is set to 20V, and in this way, the a-1 constant error is expressed as (1) by equation (1).
JFJ constant error) -10.100 (V) x O.
1 (%) + 20 (V) x O, 1 (%) - 0.0301 (V) 90.03 (V)
becomes. In other words, the Jl constant error of the voltmeter VM is ±o. oa (v), and the actual output voltage of three-terminal regulator 1 is 10.070 (V) ~ 10.1
30 (V). Therefore, if the tolerance in determining AFl is ±0.03 (V) or more, this voltage pull VM can be used as is, but if the tolerance is less than ±0.03 (V), the voltmeter VM should be changed to Need to change to something higher.
従来の半導体素子の試験装置は以」二のようにt1■成
されており、高い栢度で三端子レギュレータ1の出力電
圧を測定しようとした場合、情度の高い7は圧計VMが
必要となり、必然的にテスタ8が高価になるという問題
点があった。Conventional testing equipment for semiconductor devices is configured as shown below, and when trying to measure the output voltage of the three-terminal regulator 1 with high accuracy, a pressure gauge VM is required. However, there was a problem that the tester 8 was inevitably expensive.
この発明は上記のような間j11点を解消するためにな
されたもので、オ1ク度のさほど高くない電圧=1を用
いても半導体素子の出力電圧を桔度よく測定することが
できる゛P導体素子の試験装置を111ることを[1的
とする。This invention was made to solve the above-mentioned problem, and it is possible to accurately measure the output voltage of a semiconductor element even if a voltage of not so high as 1 is used. It is assumed that the test equipment for P-conductor elements is 111.
この発明に係る半導体素子の試験装置は、所定の入力を
半導体素子に与え、該入力に応答して導出される半導体
素子の出力に基づき前記圭専体素rの試験を行う半導体
素子の試験装置に適用される。A semiconductor device testing device according to the present invention is a semiconductor device testing device that applies a predetermined input to a semiconductor device and tests the Kei exclusive device r based on the output of the semiconductor device derived in response to the input. applied to.
この発明に係る半導体素rの試験装置は、゛1′一導体
素子の出力の電圧を測定するための電圧1!と直列に定
電圧源を接続し、半導体素子の山カの電圧と定電圧源の
定電圧との差電圧を電圧M1により測定するようにして
いる。The testing device for a semiconductor element r according to the present invention has a voltage 1! A constant voltage source is connected in series with the semiconductor element, and the difference voltage between the voltage at the peak of the semiconductor element and the constant voltage of the constant voltage source is measured using the voltage M1.
この発明においては、半導体素子の出カ電圧を州定ずる
ための電圧5Iと直列に定電圧源を接続し、゛1′導体
素子の出力電圧と定電庄源の定電圧との差II圧を電圧
M1により測定するようにし、電圧j1で測定すべき電
圧をより小さくしている。In this invention, a constant voltage source is connected in series with the voltage 5I for determining the output voltage of the semiconductor element, and the difference II voltage between the output voltage of the conductive element 1' and the constant voltage of the constant voltage source is is measured by the voltage M1, and the voltage to be measured by the voltage j1 is made smaller.
第1図はこの発明に係る半導体素子の試験装置の一実施
例を示す構成図である。図において、第4図に示した従
来装置との相違点は、テストヘッド2内部にその?!!
江値が正確な定電圧源30oを新たに設けたことである
。定電圧源30oは、電71 .1t. V MとGN
D間に接続されている。その他の堝成は従来と同様であ
る。FIG. 1 is a block diagram showing an embodiment of a semiconductor device testing apparatus according to the present invention. In the figure, the difference from the conventional device shown in FIG. ! !
This is because a constant voltage source 30o with an accurate voltage value is newly installed. The constant voltage source 30o is a power source 71. 1t. VM and GN
It is connected between D. Other constructions are the same as before.
次に動作について説明する。従来と同様、cPU I’
ll( 1 1からの指令により、テストヘッド2西部
の周辺回路及びテスタ8内部のIIJ変電圧源9の車圧
r,f, ”j;を所望の測定条件に設定する。電圧”
’ ” Mは、玉端了レキュLノータ1の出力電圧と、
定・七圧?”+< 3 0 nの定車圧との差動11を
A1り定ずる。Next, the operation will be explained. As before, cPU I'
ll ( 1 Based on the command from 1, set the vehicle pressure r, f, "j; of the peripheral circuit in the western part of the test head 2 and the IIJ variable voltage source 9 inside the tester 8 to the desired measurement conditions.Voltage"
' ``M is the output voltage of Tamata Ryoreku L Notor 1,
Constant/7 pressure? The differential 11 with the constant vehicle pressure of "+<30n" is defined as A1.
例えば、定電圧源3 0 0の定電圧かl[l.Of+
00(V) であり、電圧71’ V Mノ(則定1直
カ0. 1000 ( Vてあるとする。このとき、電
圧.:lVHの測定レン/は2 C) O m Vに設
定されており、このようにするとイ[11定誤差は (
1)式より、(測定誤差) − 0.I.OH (V
) x [1.1 (%)+ 200 (rnV
) x O.1 ( ?6)−0.3(mV
)
となる。つまり、電圧31vMのflPI定Ill:差
は最堪iの場合、± 0.3(mV)となり、実際のさ
端子レギュレータ1の出力は10.0997 ( V
)〜In. +003(V)の範囲に存(Eすること
になる。従来の4PI定1;f 箪は±30mV(±0
.03V)であるからAlll定ご;冷は約1/+00
に減少したことになる。この実地利では、定電圧源30
口を新たに設け、三端rレギュレータ1の出力電圧と定
電圧源30(]の定電圧との差tliI上を電圧jl
V Mの最小ill定レンジ(200rnV)て)11
1定できるようにしたので、All定1τ1差が従来に
比べ小さくなる。For example, the constant voltage of the constant voltage source 300 or l[l. Of+
00 (V), and the voltage is set to 71' V M (regular 1 direct voltage 0.1000 (V). At this time, the measurement range of voltage: lVH is 2 C) O m V. In this way, the constant error is (
From formula 1), (measurement error) - 0. I. OH (V
) x [1.1 (%) + 200 (rnV
) x O. 1 (?6)-0.3(mV
) becomes. In other words, the difference is ±0.3 (mV) when the voltage is 31 vM, and the actual output of the terminal regulator 1 is 10.0997 (V
)~In. It exists in the range of +003 (V).The conventional 4PI constant 1;f
.. 03V), so it's all constant; cold is about 1/+00
This means that it has decreased to In this practical advantage, constant voltage source 30
A new opening is provided, and the voltage jl is set above the difference tliI between the output voltage of the three-terminal r regulator 1 and the constant voltage of the constant voltage source 30 ().
VM minimum ill constant range (200rnV)) 11
1 constant, the All constant 1τ1 difference is smaller than in the past.
第2図はこの発明の他の実施例を示す構成図である。図
において、第1図に示した装置との相違点{よ定電圧源
3 0 0の代りに各々定tli J.IEの異なる3
つの定電圧源3 0 0 a , 3 (1 0 b
, 3 0 (1 cを設け、スイッチ400によ
り定電圧源3 0 0 a ,30 0 b , 3
0 0 cのうちいずれか−つを選択することができ
るようにしたことである。その他の4M成は第1図に示
した装置と同様である。なお、m?Is圧#.3 0
0 a , 3 0 0 b , 3 0 0 cの各
々の定rIS圧は、定電圧源300aが最も大きく、次
いで定電圧源300b,300cの順に小さくなってい
るものとする。また、定電圧源3 0 0 aと定電圧
源3 0 0 bの定電圧の差および定電圧源30(’
1 bと定電圧源300cの定電圧の差は、各々電JI
E÷1vHの最小′A−1定レンジの値の2倍以ドにな
るように設定されているものとする。FIG. 2 is a block diagram showing another embodiment of the invention. In the figure, the difference with the device shown in FIG. 3 different IEs
Two constant voltage sources 3 0 0 a, 3 (1 0 b
, 30 (1c is provided, and the switch 400 connects constant voltage sources 300a, 300b, 3
0 0 c can be selected. The other 4M configurations are the same as the device shown in FIG. Furthermore, m? Is pressure #. 3 0
It is assumed that the constant rIS pressures of 0 a , 3 0 0 b , and 3 0 0 c are the highest for the constant voltage source 300 a and then decrease in the order of the constant voltage sources 300 b and 300 c. In addition, the difference in constant voltage between the constant voltage source 300a and the constant voltage source 300b and the constant voltage source 30('
The difference in constant voltage between 1b and constant voltage source 300c is
It is assumed that the minimum value of E÷1vH is set to be at least twice the value of the fixed range.
例えば、三端子レギュレータ1の出力電圧がln.o0
0V± 500m Vの間のある値をとると予想される
場合を考える。前述のようにホ圧it’ V Mの最小
側定レンジは200mVである。このことにL(づき、
定電圧1(i 3 0 0 a , 3 0 f:.
] b , 3 0 0 cの定:’is圧を各々I
0.4.00 (1.7) . 10.000 (V)
, 9.600(V)と設定する。三端子レギュレ
ータ1の出力電圧が9.500 ( V )〜9.80
0 ( V )の間の値をとるとp想されるときはCP
U部11からの指令によりスイッチ4. O Oを切り
替え定電厘源3 0 0Cを選択し、9.8110 (
V ) 〜10.200 ( V )の間の1直髪と
ると予;t!!されるときはCPU部11からの1i合
によりスイノチ400を切り替え定電圧源3f’) (
.1l bを選択し、10.200 ( V )〜I.
0.500 ( V )の間の値をとると予想されると
きはCPU部11からの指令によりスイッチ400を切
り替え定7は圧3f 3 0 0 aを選択する。各々
の場含において、三端r−レギュレータ1の出力電圧と
定電圧源3 0 0a 3 0 0 b 3 0
0 cの定7B圧との箆は前連の定電圧の条f″1゛に
鑑みると2 0 0 m V以内となる。For example, if the output voltage of the three-terminal regulator 1 is ln. o0
Consider the case where it is expected to take a certain value between 0V±500mV. As mentioned above, the minimum fixed range of the pressure it' VM is 200 mV. Regarding this, L
Constant voltage 1 (i 3 0 0 a, 3 0 f:.
] b, 3 0 0 c constant: 'is pressure, respectively I
0.4.00 (1.7). 10.000 (V)
, 9. Set to 600 (V). The output voltage of three-terminal regulator 1 is 9.500 (V) to 9.80
When p is assumed to take a value between 0 (V), CP
Switch 4. is activated by a command from U section 11. Switch O O and select constant voltage source 3 0 0C, 9.8110 (
V) ~ 10.200 (V) If you take 1 straight hair; t! ! When this happens, the Suinochi 400 is switched according to the 1i signal from the CPU section 11, and the constant voltage source 3f') (
.. Select 1lb and 10.200 (V) to I.
When the value is expected to be between 0.500 (V), the switch 400 is switched in response to a command from the CPU section 11, and the pressure 7 is selected to be 3f 3 0 0 a. In each case, the output voltage of the three-terminal r-regulator 1 and the constant voltage source 3 0 0 a 3 0 0 b 3 0
Considering the constant voltage line f''1'' of the previous series, the voltage with a constant 7B voltage of 0 c is within 200 mV.
従って、電圧1■Hの測定レンジを最小レン/てある2
0 0 tn Vに設定すればよい。そのため、(1
)式に.!I(づき求められる測定誤差は2■あるいは
20■の測定レンジを使用ずる場含と比較し、小さくな
る。従って、1’ +1111される出力電圧の範囲か
比較的広い場合にも桔度の高い測定が可能となる。Therefore, the measurement range for voltage 1■H is set to the minimum range/2.
It may be set to 0 0 tn V. Therefore, (1
) to the formula. ! The measurement error required based on I(I) is smaller than that when using a measurement range of 2 or 20. Therefore, even if the output voltage range of 1' + 1111 is relatively wide, a high accuracy can be obtained. Measurement becomes possible.
なお、−L記実施例では、電圧訓■8のAlll定レン
ジを最小とできるよう定電圧源30 0, ’3 (
−) O a,73 D O b , 3 0 0
cの定電圧を設定したが、必ずしも最小I1−1定レン
ジを使用するように設定する必要はなく、より低いレン
ジで測定できるような定電圧であればよい。In addition, in the embodiment described in -L, constant voltage sources 30 0, '3 (
-) O a, 73 D O b , 3 0 0
Although the constant voltage of c is set, it is not necessarily necessary to set it to use the minimum I1-1 constant range, and any constant voltage that allows measurement in a lower range may be used.
また、上記実施例では、三端子レギュレータ1の出力電
圧と定電圧源3 0 (.) , 3 0 0 a
, 3 0 0し.300cの定電圧との差電圧を直
接電圧引VMによりfll定するようにしているか、差
電圧を16度のよい差動アンブにより検I11シ、この
検出電圧を?li t−E÷1vHにより測定してもよ
い。In addition, in the above embodiment, the output voltage of the three-terminal regulator 1 and the constant voltage source 3 0 (.) , 3 0 0 a
, 300. Is the differential voltage from the constant voltage of 300c fully determined by direct voltage pull VM, or is the differential voltage detected by a good differential amplifier of 16 degrees, and this detected voltage? It may be measured by lit-E÷1vH.
また、1二紀実施例−Cは、被試験半導体累了として三
端rレギュレータ1を例ノ』ミしたが、D/Aコンバー
タ,リセットICなと、他のいろいろなf重類の半導体
素子の試験装置にもこの発明は適)1「cきる。In addition, although the 12th embodiment example-C includes the three-terminal regulator 1 as the semiconductor under test, various other types of semiconductor devices such as D/A converters, reset ICs, etc. This invention is also suitable for testing equipment of 1"c.
また、」二記実帷1クリでは、電圧計V9の測定レゴン
が3 fII類(200 mV, 2 V. 20V)
の場合について説明したか、2種頒あるいは4種類以上
であってもよい。また、逆に電庄計VMは71111定
レンジを1種類しか有さないものでよい。つまり、定電
圧源300等を設けることにより、(1)式の右辺の(
71!II定値)を小さくてきるので、( ,1il
+定誤葦)も小さくすることができる。また、上記第2
図の実施例では3種類の定電圧源300a,300b’
3 0 0 cを合する場合について説]リ1したが、
三端了レギュレータ1の予想出力電圧の範囲に拙づき、
幾通りに設定してもよい。また定電圧FA 3 0 0
a ,300b.300c, スイッチ400は必
ずしもテストヘッド2内部に設ける必要はなく、テスタ
8内部に設けてもよい。また、第2図の実施例において
、スイッチ400により定電圧源3 0 0 a ,−
.3 0 0 b , 3 0 0 cの切り替えを
行い、3種類の定重圧を得るようにしたが、スイッチ4
00および定重圧源3 0 0 a , 3 0 0
b , 3 0 0 cの代りに第゛4図に示すよ
うにD/Aコンバータ50oを設iJ ,電圧引vMに
!jえられる定電圧をディジタル的にコントロールして
もよい。この場合、各桁のビットに対応したあらかしめ
定められた電圧値の組合せにより定電圧を得ることがで
きるので、上記実施例より小型の試験装置を得ることが
できる。In addition, in the case of ``Second Record 1 Crit'', the measurement legon of voltmeter V9 is 3 fII class (200 mV, 2 V. 20V)
Although the above case has been described, two types or four or more types may be distributed. Conversely, the electric meter VM may have only one type of 71111 constant range. In other words, by providing a constant voltage source 300 etc., the right side of equation (1) (
71! II constant value) can be made small, so ( , 1il
+ fixed error) can also be reduced. In addition, the second
In the illustrated embodiment, three types of constant voltage sources 300a and 300b' are used.
Regarding the case of combining 3 0 0 c] Li1, but
Due to the expected output voltage range of the three-way regulator 1,
It may be set in any number of ways. Also constant voltage FA 300
a, 300b. 300c and the switch 400 do not necessarily have to be provided inside the test head 2, but may be provided inside the tester 8. Further, in the embodiment shown in FIG. 2, the switch 400 connects the constant voltage source 3 0 0 a , -
.. 300b and 300c were switched to obtain three types of constant pressure, but switch 4
00 and constant pressure source 3 0 0 a , 3 0 0
As shown in Fig. 4, install a D/A converter 50o instead of 300c and 300c, and set the voltage to vM! The constant voltage that can be applied may be digitally controlled. In this case, a constant voltage can be obtained by a combination of predetermined voltage values corresponding to the bits of each digit, so that a smaller test device can be obtained than in the above embodiment.
以上のように、この発明によれば、半導体素子の出力の
電圧を測定するための電圧到と直列に定電圧源を接続し
、半導体素子の出カの電圧と定電圧源の定電圧との差電
圧を電圧別により測定するようにしているので、電圧刑
で111定すべき電圧をより小さくすることができ、そ
の結果、半導体素rの出力の電圧を精度よ<llpl定
することができるという効果がある。As described above, according to the present invention, a constant voltage source is connected in series with a voltage source for measuring the output voltage of a semiconductor element, and the output voltage of the semiconductor element and the constant voltage of the constant voltage source are connected in series. Since the differential voltage is measured by voltage, it is possible to reduce the voltage that must be determined by voltage measurement, and as a result, the voltage of the output of the semiconductor element r can be determined with accuracy < llpl. There is an effect.
4,図面のlltl 1itな説明
第1図はこの発明に係る半導体素−rの試験装置の一実
施例を示すfli!戊図、第2図および第3図はこの発
明の他の実施例を示す構成図、第4図は従来の半導体素
子の試験装置を示す溝或図である。4. Explanation of Drawings FIG. 1 shows an embodiment of a semiconductor device testing apparatus according to the present invention. 1, 2 and 3 are configuration diagrams showing other embodiments of the present invention, and FIG. 4 is a groove diagram showing a conventional semiconductor device testing apparatus.
図において、1は三端rレギュレータ、VMは7u圧計
、3 0 0は定用圧源てある。In the figure, 1 is a three-end R regulator, VM is a 7U pressure gauge, and 300 is a constant pressure source.
なお、各図中同一符号は同一または…当部分を示す。Note that the same reference numerals in each figure indicate the same or relevant parts.
Claims (1)
して導出される半導体素子の出力に基づき前記半導体素
子の試験を行う半導体素子の試験装置であって、 前記半導体素子の前記出力の電圧を測定するための電圧
計と直列に定電圧源を接続し、前記半導体素子の前記出
力の電圧と前記定電圧源の定電圧との差電圧を前記電圧
計により測定するようにしたことを特徴とする半導体素
子の試験装置。(1) A semiconductor device testing device that applies a predetermined input to a semiconductor device and tests the semiconductor device based on the output of the semiconductor device derived in response to the input, the device comprising: A constant voltage source is connected in series with a voltmeter for measuring voltage, and the voltage difference between the output voltage of the semiconductor element and the constant voltage of the constant voltage source is measured by the voltmeter. Characteristic testing equipment for semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1193540A JPH0356872A (en) | 1989-07-25 | 1989-07-25 | Testing device for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1193540A JPH0356872A (en) | 1989-07-25 | 1989-07-25 | Testing device for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0356872A true JPH0356872A (en) | 1991-03-12 |
Family
ID=16309774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1193540A Pending JPH0356872A (en) | 1989-07-25 | 1989-07-25 | Testing device for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0356872A (en) |
-
1989
- 1989-07-25 JP JP1193540A patent/JPH0356872A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4544879A (en) | Stimulus/measuring unit for DC characteristics measuring | |
JP2003028900A (en) | Non-contact voltage measurement method and apparatus | |
US3234459A (en) | Method and apparatus for locating faults in electrical cable lines by comparing the impedance of the entire faulted line to the impedance of a section of the line | |
US2481500A (en) | Electrical measuring instrument and circuits therefor | |
CN218546797U (en) | Kelvin four-wire test system realized through internal circuit of switch matrix | |
JPH0356872A (en) | Testing device for semiconductor device | |
JPS6325572A (en) | Leakage current measuring system of electrometer amplifier | |
JP2007024718A (en) | Control method and control program of semiconductor characteristics measuring device | |
CN109061524B (en) | Power supply test circuit and method | |
CN108318751B (en) | Board card for instrument test | |
SU1109690A1 (en) | Device for checking voltage transormeps | |
JP2001091562A (en) | Device for inspecting circuit board | |
US6674299B2 (en) | Semiconductor tester, semiconductor integrated circuit and semiconductor testing method | |
CN220490937U (en) | Bridge power supply noise detection device | |
CN219935963U (en) | Voltage and current measurement channel of digital bridge and digital bridge | |
US20050264373A1 (en) | Switching matrix and method for distinction of a connecting line | |
JPS61288436A (en) | Switching matrix structure | |
RU2739386C2 (en) | Method for determination of insulation resistance reduction point | |
CN216013480U (en) | Voltage measurement chip and voltage measurement circuit | |
CN211954363U (en) | Weighing system of strain type pressure sensor | |
US3297939A (en) | Direct reading potentiometer | |
RU2327174C1 (en) | Resistance strain gauge signal transducers | |
JPH0422307Y2 (en) | ||
CN118330535A (en) | Calibration circuit and calibration method for precise measurement unit | |
SU1026093A1 (en) | Device for measuring field transistor pair difference of shutter-to-source voltage |