JPH0356627B2 - - Google Patents
Info
- Publication number
- JPH0356627B2 JPH0356627B2 JP14228884A JP14228884A JPH0356627B2 JP H0356627 B2 JPH0356627 B2 JP H0356627B2 JP 14228884 A JP14228884 A JP 14228884A JP 14228884 A JP14228884 A JP 14228884A JP H0356627 B2 JPH0356627 B2 JP H0356627B2
- Authority
- JP
- Japan
- Prior art keywords
- ketone
- developing
- resist
- solvent
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 9
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 7
- -1 cyclic ketone compound Chemical class 0.000 claims description 7
- 239000012046 mixed solvent Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 4
- 238000007265 chloromethylation reaction Methods 0.000 claims description 4
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 claims description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- LCJNYCWJKAWZKZ-UHFFFAOYSA-N 1-prop-1-en-2-ylnaphthalene Chemical compound C1=CC=C2C(C(=C)C)=CC=CC2=C1 LCJNYCWJKAWZKZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000010551 living anionic polymerization reaction Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 1
- XJUZRXYOEPSWMB-UHFFFAOYSA-N Chloromethyl methyl ether Chemical compound COCCl XJUZRXYOEPSWMB-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940061627 chloromethyl methyl ether Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14228884A JPS6122341A (ja) | 1984-07-11 | 1984-07-11 | ネガ型レジストの現像方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14228884A JPS6122341A (ja) | 1984-07-11 | 1984-07-11 | ネガ型レジストの現像方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6122341A JPS6122341A (ja) | 1986-01-30 |
| JPH0356627B2 true JPH0356627B2 (enrdf_load_stackoverflow) | 1991-08-28 |
Family
ID=15311888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14228884A Granted JPS6122341A (ja) | 1984-07-11 | 1984-07-11 | ネガ型レジストの現像方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6122341A (enrdf_load_stackoverflow) |
-
1984
- 1984-07-11 JP JP14228884A patent/JPS6122341A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6122341A (ja) | 1986-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5366851A (en) | Device fabrication process | |
| CA1088737A (en) | High energy radiation curable resist and preparatory process | |
| EP0060585B1 (en) | Method of applying a resist pattern on a substrate, and resist material mixture | |
| US3987215A (en) | Resist mask formation process | |
| US4286049A (en) | Method of forming a negative resist pattern | |
| JPH0546535B2 (enrdf_load_stackoverflow) | ||
| US3387976A (en) | Photopolymer and lithographic plates | |
| US5688634A (en) | Energy sensitive resist material and process for device fabrication using the resist material | |
| US4346163A (en) | Resist for use in forming a positive pattern with a radiation and process for forming a positive pattern with radiation | |
| US4383026A (en) | Accelerated particle lithographic processing and articles so produced | |
| JPS60501777A (ja) | 二酸化ケイ素系グラフト重合リソグラフマスク | |
| EP0030107B1 (en) | Process for forming resist pattern | |
| JPH0356627B2 (enrdf_load_stackoverflow) | ||
| US3916035A (en) | Epoxy-polymer electron beam resists | |
| JPH0241740B2 (enrdf_load_stackoverflow) | ||
| US4302529A (en) | Process for developing a positive electron resist | |
| JPH0330852B2 (enrdf_load_stackoverflow) | ||
| JPH07225473A (ja) | デバイスの製造方法 | |
| Wagner et al. | Transition metal-carbonyl derivatives as photopolymerization initiators and photocrosslinking agents in photoresists | |
| JPS647651B2 (enrdf_load_stackoverflow) | ||
| JPH03148659A (ja) | 電離放射線感応性ネガ型レジスト材料組成物 | |
| JPH01217341A (ja) | ポジ型電子線レジストのパターン形成方法 | |
| JPH0644153B2 (ja) | 放射線感受性ネガ型レジスト材料 | |
| JPS6091350A (ja) | 電離放射線感応ネガ型レジスト | |
| JPH0331250B2 (enrdf_load_stackoverflow) |