JPH0354571A - Method for removing photosensitive resin - Google Patents
Method for removing photosensitive resinInfo
- Publication number
- JPH0354571A JPH0354571A JP18970189A JP18970189A JPH0354571A JP H0354571 A JPH0354571 A JP H0354571A JP 18970189 A JP18970189 A JP 18970189A JP 18970189 A JP18970189 A JP 18970189A JP H0354571 A JPH0354571 A JP H0354571A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- oxygen plasma
- chromium
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 25
- 229920005989 resin Polymers 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 21
- 239000011651 chromium Substances 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 17
- 239000010409 thin film Substances 0.000 abstract description 13
- 239000010408 film Substances 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 235000019441 ethanol Nutrition 0.000 abstract description 4
- 230000005587 bubbling Effects 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 125000000468 ketone group Chemical group 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241001135931 Anolis Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は微細加工に用いられる感光性樹脂の除去方法に
関するものであり、特に、クロム薄膜上の感光性樹脂の
高速除去方法を提案するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a method for removing photosensitive resin used in microfabrication, and in particular, proposes a high-speed method for removing photosensitive resin on a thin chromium film. .
従来の技術
基板上の各種薄膜釦よび被膜の選択的パターン形或に関
連して用いられる感光性樹脂の除去方法には、有機溶剤
中での加熱浸漬、過酸化水素水を添加された熱硫酸中で
の浸漬、発煙硝酸中での浸漬、高濃度の現像液中での浸
漬等のように化学薬品を用いる方法と、酸素(02)プ
ラズマ中での灰化のようにガスを用いる方法とがあり、
基板材料や感光性樹脂の下地によって、あるいは作戎中
のデバイスへの物理的ないしは化学的損傷を考慮して適
宜選定される。Conventional methods for removing photosensitive resin used in selective patterning of various thin film buttons and coatings on substrates include heating immersion in organic solvents, hot sulfuric acid to which hydrogen peroxide has been added, etc. Methods using chemicals, such as immersion in water, immersion in fuming nitric acid, immersion in highly concentrated developer, etc., and methods using gases, such as ashing in oxygen (02) plasma. There is,
It is selected as appropriate depending on the substrate material and photosensitive resin base, or in consideration of physical or chemical damage to the device during fabrication.
化学薬品を用いる方法では、処理後に大量に必要とされ
る純水の確保や廃液の処理に関して維持費が高くつくの
で、最近では初期投資としては高額であっても酸素プラ
ズマによるドライ処理の方がランニング・コストを下げ
る意味では有効となりつつある。酸素プラズマによる感
光性樹脂の灰化は、例えば図に示すように、減圧状態を
維持するための機構としてロータリポンプ1が接続され
た石英製の反応室2中に、基板を保持するための石英や
アpミニウム等で形或されたボート3共々感光性樹脂を
塗布された基板4を放置し、高周波電源5より供給され
る電力で反応室2内に酸素のプラズマ状態を発生させる
ことによって達戊される。なおバρプ6.アは真空引き
のための開閉バノレプであり、バルブ8.9は原料ガス
である酸素ガスとパージ用の窒素(N2)ガヌの開閉パ
ルプであり、1oはポート3を出し入れするための蓋で
、0リング等を併用して真空を維持している。11は石
英容器2の外壁に設置された容量結合のための電極であ
る。Methods that use chemicals require high maintenance costs for securing the large amount of pure water required after treatment and for treating waste liquid, so dry treatment using oxygen plasma has recently become more popular, even though the initial investment is high. This is becoming effective in terms of lowering running costs. Ashing of the photosensitive resin by oxygen plasma is carried out, for example, as shown in the figure, in a quartz reaction chamber 2 to which a rotary pump 1 is connected as a mechanism for maintaining a reduced pressure state. This is achieved by leaving a substrate 4 coated with a photosensitive resin together with a boat 3 formed of aluminum or aluminum, and generating an oxygen plasma state in the reaction chamber 2 with power supplied from a high frequency power source 5. be decapitated. In addition, ρ 6. A is an opening/closing valve for vacuuming, valve 8.9 is an opening/closing valve for oxygen gas, which is the raw material gas, and nitrogen (N2) gas for purging, and 1o is a lid for taking port 3 in and out. , O-ring, etc. are used in combination to maintain the vacuum. Reference numeral 11 denotes an electrode for capacitive coupling installed on the outer wall of the quartz container 2.
一般的に酸素プラズマによる灰化速度を高めるためには
、基板の温度を高〈して感光性樹脂の分解を促進する方
法と、高周波電力を増して酸素プラズマを大量に供給す
る方法とが有効であり、容器2が石英であれば赤外線ラ
ンプ等の加熱手段で外部から簡単に基板を加熱・昇温出
来る。Generally, in order to increase the ashing rate by oxygen plasma, two methods are effective: increasing the temperature of the substrate to accelerate the decomposition of the photosensitive resin, and increasing high-frequency power to supply a large amount of oxygen plasma. If the container 2 is made of quartz, the substrate can be easily heated and heated from the outside using a heating means such as an infrared lamp.
発明が解決しようとする課題
ガラス基板上のクロム(−Or)薄膜を選択的に形戊す
るためには、工業的にはホト・マスクが長い間利用され
てきた。しかも、周知のととくホト・マスクは付加価値
が高く、加工に長時間を要してもその生産性が問題とな
ることはなかった。しかしながら、近年ガラス基板上に
クロム薄膜を必要とするデバイメとしてアクティブ型の
液晶ノζネノレが、にわかに注目されるようになった。Problems to be Solved by the Invention Photomasks have long been used industrially to selectively shape chromium (-Or) thin films on glass substrates. Moreover, the well-known photomask has a high added value, and even if it takes a long time to process, there is no problem with productivity. However, in recent years, active type liquid crystal display devices, which require a thin chromium film on a glass substrate, have suddenly attracted attention.
液晶ノくネレ
ルを構或するアクティブ基板においては、コストとの兼
ね合いから従来のシリコン系半導体グロセVスと同等以
上の生産性が要求され、ホト・マスク処理のように低電
力で基板1枚当り6〜10分もかけてクロム上の感光性
樹脂を処理することは許されなくなった。For active substrates that make up liquid crystal panels, productivity equivalent to or higher than that of conventional silicon-based semiconductor substrates is required due to cost considerations. It is no longer acceptable to process photopolymer on chrome for 6-10 minutes.
本発明者等は従来の感光性樹脂の除去と同じように、基
板加熱を行うとともに、印可高周波電力も増加してクロ
ム上の感光性樹脂の除去を試みた。The present inventors attempted to remove the photosensitive resin on the chromium by heating the substrate and increasing the applied high-frequency power in the same manner as in the conventional removal of the photosensitive resin.
その結果判明したことは、1)感光性樹脂が存在しない
場合でもCruxとしてクロム薄膜の表面が黒く変色し
た。2)感光性樹脂が共存するとOr Coxとしてク
ロム薄膜が食刻されて膜減りした。の2点である。これ
らの副作用を回避しようとすると基板の温度上昇を押え
、そのためにも高周波電力を下げることになり、生産性
が低下することが理解できる、
課題を解決するための手段
本発明は上記した課題に鑑みてなされたもので、クロム
薄膜の酸素プラズマ処理に際して、炭化水素系ガス1た
は蒸気を添加することによりクロム薄膜の変質と膜減り
を防止するものである。As a result, it was found that 1) the surface of the chromium thin film turned black as Crux even in the absence of the photosensitive resin; 2) When a photosensitive resin coexists, the chromium thin film is etched as Or Cox and the film is reduced. There are two points. It can be understood that if an attempt is made to avoid these side effects, the temperature rise of the substrate will be suppressed, and for that reason, the high frequency power will also be lowered, resulting in a decrease in productivity. This method was developed in view of the above, and is intended to prevent deterioration and thinning of the chromium thin film by adding hydrocarbon gas 1 or steam during the oxygen plasma treatment of the chromium thin film.
作用
材料ガス中に混入された炭化水素系ガス又は蒸気は、高
周波電力によって分解しアpキp基のラジカルを大量に
放出する。一方、酸素プラズマで分解された感光性樹脂
からはケトン基が発生しており、ケトン基がただちにア
pキル基と反応してエーテノレとして失われる結果、ク
ロムとケトン基との結合が抑制され反応性生戎物である
CrCOxが生じなくなったと考えられる。また感光性
樹脂の除去が終了した後は、アルキIレ基のラジカルが
酸素プラズマと反応し続けるので、酸素プラズマとクロ
ムとの直接反応が抑制されてCruxが生戊しに〈〈な
ったと思われる。The hydrocarbon gas or vapor mixed into the working material gas is decomposed by high frequency power and releases a large amount of ap group radicals. On the other hand, ketone groups are generated from the photosensitive resin decomposed by oxygen plasma, and as a result, the ketone groups immediately react with the apkyl groups and are lost as etheroles, which suppresses the bonding between chromium and ketone groups and causes the reaction. It is thought that CrCOx, which is a sex product, is no longer produced. In addition, after the removal of the photosensitive resin is completed, the radicals of the alkylene group continue to react with the oxygen plasma, so it is thought that the direct reaction between the oxygen plasma and chromium is suppressed, resulting in the production of Crux. It will be done.
実施例
以下、本発明の一実施例の感光性樹脂の除去方法につい
て説明する。EXAMPLE A method for removing a photosensitive resin according to an example of the present invention will be described below.
反応室は内径360ff、長さsoonの円筒形石英容
器で、厚さ1.1ffのガラス基板と膜厚1μmのクロ
ム薄膜がスパソタで被着形或された同ガラス基板を各々
48枚ほどセラミノク製のボートに掲載してプラズマ処
理した結果について述べる。The reaction chamber was a cylindrical quartz container with an inner diameter of 360 ff and a length of about 100 ft., and a glass substrate with a thickness of 1.1 ff and a chromium thin film with a thickness of 1 μm was deposited on a chromium thin film of about 48 pieces each by a ceramic plate. This article describes the results of plasma treatment on a boat.
感光製樹脂は長瀬産業(株)製のNNR−747を膜厚
1μmで塗布し、露光・現像後の基板上のパターン占有
率は60優とした。13.56M}12、800ワット
の高周波電力を石英容器外壁より容量結合で供給し、真
空度0,7Torr,酸素ガス流量1008CCM,基
板加熱温度200℃の処理条件では46分間で素ガラス
上の感光性樹脂は除去できた。この条件ではクロムの表
面状態、すなわち不動態ができて表面に薄い酸化膜が形
戎されているかどうかによっても多少は左右されるが、
感光性樹脂の除去が終了した時点でクロム薄膜の部分的
消失や黒化が観察される。そこで、図の点線12で囲ん
だようにアルコール溶液13を入れた密閉容器14中を
開閉バルプ15.16を用いて窒素(N2)ガスを1o
osccMの流量でキャリアガスとしてエチpアルコー
lレ(C2H501{)液中をパブリングさせて得た炭
化水素系ガスを上記反応室2内に導入したところ感光性
樹脂の除去には60分間を要したが、クロム薄膜の膜減
りや黒化ぱ生じなかった。感光性樹脂の除去速度は異な
るカ、エテpアノレコーノレ(C2H50H)の他ニメ
チlレア!レコ ーノレ( OH,OH )やフ゛
ロ ヒ゜ノレアノレコ ーノレ(05M,OHI等のア
ノレコーノレを用いても同等の結果が得られる。As the photosensitive resin, NNR-747 manufactured by Nagase Sangyo Co., Ltd. was applied to a film thickness of 1 μm, and the pattern occupancy rate on the substrate after exposure and development was 60 Yus. 13.56M} 12.800 watts of high-frequency power is supplied via capacitive coupling from the outer wall of the quartz container, and under the processing conditions of a vacuum degree of 0.7 Torr, an oxygen gas flow rate of 1008 CCM, and a substrate heating temperature of 200 degrees Celsius, the exposure on bare glass can be achieved in 46 minutes. The plastic resin could be removed. Under these conditions, it depends to some extent on the surface condition of the chromium, that is, whether or not a thin oxide film is formed on the surface due to passivation.
When the removal of the photosensitive resin is completed, partial disappearance and blackening of the chromium thin film is observed. Therefore, as indicated by the dotted line 12 in the figure, nitrogen (N2) gas was introduced into the airtight container 14 containing the alcohol solution 13 at 1o using the open/close valves 15 and 16.
When a hydrocarbon gas obtained by bubbling an ethyl alcohol (C2H501{) liquid as a carrier gas was introduced into the reaction chamber 2 at a flow rate of osccM, it took 60 minutes to remove the photosensitive resin. However, no thinning or blackening of the chromium film occurred. The removal speed of the photosensitive resin is different from that of etepanorekonore (C2H50H) and Nimethylrea! Equivalent results can be obtained by using an anole recorder such as recorder (OH, OH) or fluorophore recorder (05M, OHI).
発明の効果
本発明によれば、酸素プラズマによるクロム薄膜上の感
光性樹脂の除去が多少処理時間は長くなるが膜減りや黒
化のない状態で得られ、従来のように低電力下での対応
に比較すると、処理時間は恥から児と大幅に短縮され、
その工業的価値はきわめて高い。Effects of the Invention According to the present invention, the photosensitive resin on the chromium thin film can be removed by oxygen plasma without film loss or blackening, although the processing time is somewhat longer, and it is possible to remove the photosensitive resin on the chromium thin film using oxygen plasma without reducing the film or blackening. Compared to its counterpart, processing time is significantly reduced from shame to child;
Its industrial value is extremely high.
図は酸素プラズマによる感光性樹脂の灰化装置のシステ
ム図である。
1・・・・・真空ポンプ、2・・・・・反応室、3・・
・・・・ボート、4・・・・・・基板、5・・・・・・
高周波電源、6,7,8,9,15.16・・・・・・
開閉バノレプ、10・・・・・蓋、1
1
1 ・・・・・高周波電極、
4・・・・・・密閉容器。The figure is a system diagram of a photosensitive resin ashing device using oxygen plasma. 1...Vacuum pump, 2...Reaction chamber, 3...
...Boat, 4...Board, 5...
High frequency power supply, 6, 7, 8, 9, 15.16...
Opening/closing vanolep, 10... Lid, 1 1 1... High frequency electrode, 4... Airtight container.
Claims (1)
ける減圧下の酸素プラズマにアルコール等の炭化水素系
ガスまたは蒸気を添加することを特徴とする感光性樹脂
の除去方法。A method for removing photosensitive resin, which comprises adding hydrocarbon gas or steam such as alcohol to oxygen plasma under reduced pressure in a reaction chamber during oxygen plasma treatment of a thin chromium film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18970189A JPH0354571A (en) | 1989-07-21 | 1989-07-21 | Method for removing photosensitive resin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18970189A JPH0354571A (en) | 1989-07-21 | 1989-07-21 | Method for removing photosensitive resin |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0354571A true JPH0354571A (en) | 1991-03-08 |
Family
ID=16245747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18970189A Pending JPH0354571A (en) | 1989-07-21 | 1989-07-21 | Method for removing photosensitive resin |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0354571A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
JPS63260032A (en) * | 1986-09-19 | 1988-10-27 | Tokyo Ohka Kogyo Co Ltd | Removal of organic film |
-
1989
- 1989-07-21 JP JP18970189A patent/JPH0354571A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
JPS63260032A (en) * | 1986-09-19 | 1988-10-27 | Tokyo Ohka Kogyo Co Ltd | Removal of organic film |
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