JPH0353578A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH0353578A JPH0353578A JP18941989A JP18941989A JPH0353578A JP H0353578 A JPH0353578 A JP H0353578A JP 18941989 A JP18941989 A JP 18941989A JP 18941989 A JP18941989 A JP 18941989A JP H0353578 A JPH0353578 A JP H0353578A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- semiconductor laser
- current block
- side electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000000903 blocking effect Effects 0.000 claims description 15
- 239000010410 layer Substances 0.000 abstract description 74
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 31
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 9
- 239000011241 protective layer Substances 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 239000011259 mixed solution Substances 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＰＯＳ，ＦＡシステム等のノくーコードリーダ
ー用および光計測等の光源に用いられる半導体レーザに
関し、特に発振波長が６８０ｎｍ以下のＡｊ２ＧａＩｎ
Ｐ系可視光半導体レーザの構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser used for a code reader such as a POS, FA system, etc. and a light source for optical measurement, etc., and particularly relates to a semiconductor laser having an oscillation wavelength of 680 nm or less.
This invention relates to the structure of a P-based visible light semiconductor laser.
第２図は従来のＡｊ７ＧａＩｎＰ系可視光半導体レーザ
の構造を示す断面図である。（例えば、昭６１年度電子
通信学会予稿集，Ｐ．４−９２）。FIG. 2 is a sectional view showing the structure of a conventional Aj7GaInP visible light semiconductor laser. (For example, Proceedings of the Institute of Electronics and Communication Engineers, 1986, P.4-92).
図中１はｎ ＧａＡｓ基板であり、この基板ｌ上ニは
ｎ−ＧａＡｓバッファ層２が形成されている。バッファ
層２上には、ｎ−ＩｎＧａＡＡＰクラッド層３，ＩｎＧ
ａＰ活性層４ａｐ ＩｎＧａＡｎＰクラッド層５，ｐ
−ＩｎＧａＰｚッチング停止層６，ｎ−ＧａＡｓ電流阻
止層７及びｐ−Ｇ ａ Ａ ｓコンタクト層８からなる
ダブルヘテロ接合構造が形成されている。In the figure, reference numeral 1 denotes an n-GaAs substrate, and an n-GaAs buffer layer 2 is formed on this substrate l. On the buffer layer 2, an n-InGaAAP cladding layer 3, an InG
aP active layer 4ap InGaAnP cladding layer 5,p
A double heterojunction structure consisting of an -InGaPz etch stop layer 6, an n-GaAs current blocking layer 7 and a p-GaAs contact layer 8 is formed.
この構造を有する半導体レーザ結晶は通常ＭＯＶＰＥ法
又はＭＢＥ法によって製造されるが、ここでは量産性に
優れたＭＯＶＰＥ法を用いた場合について述べる。Semiconductor laser crystals having this structure are usually manufactured by MOVPE or MBE, but here we will discuss the case where MOVPE, which is excellent in mass production, is used.
ここで、１回目のＭＯＶＰＥ戒長によってｎ一Ｇ ａ
Ａ ｓバッファ層２からｎ−ＧａＡｓ電流阻止層７まで
の６層構造を形成し、ｎ−ＧａＡｓ電流阻止層７の一部
にｐ−ＩｎＧａＰ工，チング停止層６が露出するストラ
イプ状の溝９が形威されており、続いて２回目のＭＯＶ
ＰＥ成長によって溝９を含むｎ−ＧａＡｓ電流阻止層７
上にｐ−ＧａＡｓコンタクト層８が形威されている．そ
して、コンタクト層８の上面にｐ側電極１０が被着され
、基板ｌの下面にはｎ側電極１１が被着されている。Here, by the first MOVPE Kaicho, n1G a
A six-layer structure is formed from the As buffer layer 2 to the n-GaAs current blocking layer 7, and a striped groove 9 is formed in which the p-InGaP layer 6 is exposed in a part of the n-GaAs current blocking layer 7. is in full form, followed by the second MOV
n-GaAs current blocking layer 7 containing grooves 9 by PE growth
A p-GaAs contact layer 8 is formed on top. A p-side electrode 10 is attached to the upper surface of the contact layer 8, and an n-side electrode 11 is attached to the lower surface of the substrate 1.
この構造では、電流狭窄はｐ ＝ Ｇ ａ Ａ ｓコン
タクト層８とｎ−ＧａＡｓ電流阻止層７により行なわれ
る。また、ｐ−ＩｎＧａＰエッチング停止層６はストラ
イプ状の溝９を形戒する際にｎ−ＧａＡｓ電流阻止層７
だけが化学エッチングされるためのエッチング停止層の
役割をしており、またｐ一ＩｎＧａＡｎＰクラッド層５
とｐ−ＧａＡｓコンタクト層８との間の電気抵抗を低減
を目的とするものである。In this structure, current confinement is performed by the p=GaAs contact layer 8 and the n-GaAs current blocking layer 7. In addition, the p-InGaP etching stop layer 6 is used to form the n-GaAs current blocking layer 7 when forming the striped grooves 9.
The p-InGaAnP cladding layer 5 serves as an etching stop layer for chemical etching.
The purpose of this is to reduce the electrical resistance between the p-GaAs contact layer 8 and the p-GaAs contact layer 8.
しかしながら、上述した従来の半導体レーザの構造は、
２回目のＭＯＶＰＥ戊長の際に、ｐ−ＧａＡｓコンタク
ト層８の戒長に先だってｎ − Ｇ ａＡｓ電流阻止層
７と溝９に露出したｐ−ＩｎＧａＰエッチング停止層６
の表面を■族ガスによって熱的劣化から保護する必要あ
る。例えばＧａＡｓ層表面は高温下ではＡｓが飛散し、
ＩｎＧａＰ層表面はＰが飛散し、その層表面が熱劣化し
、次に或長ずる戒長層に結晶欠陥が導入されるが、さら
にはその上に成長すること自体が困難となる。However, the structure of the conventional semiconductor laser described above is
During the second MOVPE etching, the n-GaAs current blocking layer 7 and the p-InGaP etching stop layer 6 exposed in the groove 9 are removed before the p-GaAs contact layer 8 is removed.
It is necessary to protect the surface from thermal deterioration by group Ⅰ gases. For example, on the surface of a GaAs layer, As scatters under high temperatures.
P is scattered on the surface of the InGaP layer, the layer surface is thermally degraded, and then crystal defects are introduced into a certain lengthening layer, but furthermore, it becomes difficult to grow on the layer itself.
従来構造では、Ｖ族ガスとしてＰＨ３又はＡｓＨ，のど
ちらか一方を熱的保護用のガスとして層表面に流してお
くために、例えばＰＨ３ガス下ではｐ ＩｎＧａＰエ
ッチング停止層６表面からのＰの飛散は抑制されるがＨ
− Ｇ ａ Ａ ｓ電流停止層７表面からのＡｓの飛
散は抑制されないため、次に戒長されるｐ−ＧａＡｓコ
ンタクト層８に結晶欠陥が導入され、半導体レーザの寿
命が短かく高信頼な半導体レーザな得ることが困難とな
る欠点があった．一方、ＡＳＨ３ガス下においても同様
な結果となる．
本発明の目的は、従来のＡｆＧａＩｎＰ系可視光半導体
レーザの上記の問題点を解決し結晶欠陥のない高信頼な
半導体レーザを提供することにある。In the conventional structure, in order to flow either PH3 or AsH as a V group gas onto the layer surface as a thermal protection gas, for example, under PH3 gas, P is scattered from the surface of the p InGaP etching stop layer 6. is suppressed, but H
- Since scattering of As from the surface of the GaAs current stop layer 7 is not suppressed, crystal defects are introduced into the p-GaAs contact layer 8, which is to be removed next, resulting in a short life span of the semiconductor laser and a highly reliable semiconductor. The drawback was that it was difficult to obtain a laser beam. On the other hand, similar results are obtained under ASH3 gas. An object of the present invention is to solve the above-mentioned problems of conventional AfGaInP-based visible light semiconductor lasers and to provide a highly reliable semiconductor laser free of crystal defects.
・本発明の半導体レーザは、Ａｉ７ＧａＩｎＰ系半導体
レーザの構造において、電流阻止層を最上面に有する再
成長表面なＰを含む結晶層で保護した構造をもつもので
ある。- The semiconductor laser of the present invention has a structure of an Ai7GaInP semiconductor laser protected by a crystal layer containing P, which is a regrown surface having a current blocking layer on the top surface.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の半導体レーザの構造を示す
構断面図である。FIG. 1 is a cross-sectional view showing the structure of a semiconductor laser according to an embodiment of the present invention.
まず、原料としてメタル系■族有機金属（トリメチルイ
ンジウム，トリエチルガリウム，トリメチルアルミニウ
ム）と，Ｖ族水素化物（ Ｐ Ｈ ｓ ， Ａ ｓＨ３
）とを用いた減圧下でのＭＯＶＰＥ法により、面方位（
１００）のｎ−ＧａＡｓ基板１２（ｎ濃度２ ｘ １
０ ”ａｎ−”）上に厚さ０． ５ ｐ ｍのｎ−Ｇａ
Ａｓバッファ層１３（ｎ濃度ＩＸＩＯ’″ｃｍ−”），
厚さ１，ｕｍのｎ Ｉ ｎａｓ （ＧａｌＬ４Ａｊ？
ａ＊） ａｓＰクラッド層１４（ｎ濃度５ ｘ １ ０
”ｃｍ−”） ，厚さ０．０７μｍのＩｎａｓＧａａ
ｓＰ活性層１５，厚さ０． ８ ｐ ｍのｐ Ｉｎ．ｓ
（Ｇａａ４Ａｊ？ａａ） ．ｉＰクラッド層１６（ｐ
一濃度３Ｘ１０１７ｃｍ−り，厚さ０．０５，ｕｍのＰ
ＩｎａｓＧａａｉＰ−’ｙチング停止層１７（ｐ濃
度Ｉ Ｘ １ ０ ”ｃｍ−’） ，厚さ０． ６ ｐ
ｍのｎ−ＧａＡｓ電流阻止層１８（ｎ濃度ＩＸＩＯ’
″ｅｌｌ″″り及び厚さ０．０５μｍのＩｎａｓＧＩＬ
ａｓＰ保護層１９（ｐ型の場合はｐ濃度Ｉ Ｘ Ｉ Ｏ
”ｃｍ−’， ｎ型の場合はｎ濃度１ ｘ ｌ Ｏ
”ＣＩ１１−”）を順次成長してダブルヘテロウェハを
形成する。続いて、ＳｉＯ，膜またはフォトレジスト膜
をマスクとして用い、先ず、ＩｎａｓＧａａｓＰ保護層
１９を（Ｈ（１，Ｈ！Ｏ）混合液でエッチングし、ｎ−
ＧａＡＳ電流阻止層１８を（ Ｈ ｓ Ｐ ０ ４ ，
Ｈ ２ ０ ２ ， Ｈ ｔ Ｏ ）混合液でエッチ
ングすることにより、ＩｎａｉＧａｏ．ｓＰ保護層１９
とｎ−ＧａＡｓ電流阻止層１８を貫通し、Ｉ）−Ｉｎａ
ｓＧａａｓＰ−ｒ−ｙチング停止層ｌ７が露出したスト
ライプ状の溝２０を形戒する。First, as raw materials, metal group I organic metals (trimethylindium, triethylgallium, trimethylaluminum) and group V hydrides (PH s , A sH3
) using the MOVPE method under reduced pressure, the surface orientation (
100) n-GaAs substrate 12 (n concentration 2 x 1
0 "an-") with a thickness of 0. 5 p m n-Ga
As buffer layer 13 (n concentration IXIO'''cm-''),
n I nas (GalL4Aj?) with a thickness of 1, um.
a*) asP cladding layer 14 (n concentration 5 x 1 0
"cm-"), 0.07 μm thick InasGaa
sP active layer 15, thickness 0. 8 p m p In. s
(Gaa4Aj?aa) . iP cladding layer 16 (p
P with a concentration of 3 x 1017 cm and a thickness of 0.05 um
InasGaaiP-'y Ching stop layer 17 (p concentration IX10"cm-'), thickness 0.6p
m n-GaAs current blocking layer 18 (n concentration IXIO'
InasGIL with “ell” and thickness of 0.05μm
asP protective layer 19 (in the case of p type, p concentration I
"cm-', for n-type, n concentration 1 x l O
"CI11-") are sequentially grown to form a double hetero wafer. Next, using a SiO film or a photoresist film as a mask, the InasGaasP protective layer 19 is first etched with a (H(1,H!O) mixture) to form an n-
GaAS current blocking layer 18 (H s P 0 4 ,
InaiGao. sp protective layer 19
and n-GaAs current blocking layer 18, I)-Ina
A striped groove 20 in which the sGaasPry ching stop layer 17 is exposed is formed.
次いでトリエチルガリウムとＰＨ３を原料として用いた
減圧下でのＭＯＶＰＥ法により、図に示す如＜ｐ−Ｇａ
Ａｓコンタクト層２１を厚さ４μｍ或長する。その後、
ｐ Ｇ ａ Ａ ｓコンタクト層２ｌ上にｐ側電極２
２，基板１２の下面にｎ側電極２３を形成することによ
って第１図に示す構造の半導体レーザが完成する。Next, by MOVPE method under reduced pressure using triethyl gallium and PH3 as raw materials, <p-Ga was obtained as shown in the figure.
The As contact layer 21 is lengthened to a thickness of 4 μm. after that,
p-side electrode 2 on pGaAs contact layer 2l
2. By forming an n-side electrode 23 on the lower surface of the substrate 12, a semiconductor laser having the structure shown in FIG. 1 is completed.
また、前記実施例によれば、第１図に示す如くｎ Ｇａ
Ａｓ電流阻止層ｌ８上にＩｎａｓＧａｗｓＰ保護層１９
を積層した２層構造の場合を示しているが、保護層１９
としてＩｎＧａＡＩＰＰ層を用いても先の実施例と同様
，結晶欠陥が少なく良質ｋ半導体レーザが得られる。Further, according to the embodiment, as shown in FIG.
InasGawsP protective layer 19 on As current blocking layer l8
A case of a two-layer structure in which the protective layer 19 is laminated is shown.
Even if an InGaAIPP layer is used as the layer, a high-quality k semiconductor laser with few crystal defects can be obtained as in the previous embodiment.
このように本発明によれば、実施例に示すように第２の
ＭＯＶＰＥ法によるｐ−ＧａＡｓ：３ンタクト層２ｌの
再威長の際＃ ｐ ＩｎａｓＧａａｓＰエッチング停止
層１７及びＩｎａｓＧａｌｓＰ又はＩｎＧａＡＩＩＰ保
護層１９が露出しており、昇温時におけるＰの蒸発をＰ
Ｈｓガスを流しておくことで抑制することができ、結晶
表面の損傷を低減し、良質の半導体レーザを形戒できる
．このため、素子特性及び信頼性の向上をはかり得る利
点を有している。According to the present invention, as shown in the embodiment, when the p-GaAs:3 contact layer 2l is re-extended by the second MOVPE method, the #p InasGaasP etching stop layer 17 and the InasGalsP or InGaAIIP protective layer 19 are removed. The evaporation of P during temperature rise is
This can be suppressed by flowing Hs gas, reducing damage to the crystal surface and ensuring a high quality semiconductor laser. Therefore, it has the advantage of improving device characteristics and reliability.
第１図は本発明の一実施例の半導体レーザの構造を示す
構断面図、第２図は従来技術により得られる半導体レー
ザの構断面図を示す。
図において、
１，１２・・・・・・ｎ−ＧａＡｓ基板、２，ｌ３・・
・・・・Ｈ−ＧａＡｓバッファ層、３． １ ４−−
ｎ Ｉ ｎａｇ（Ｇａａ．４Ａｊ’ａｓ）Ｐクラッド
層、４ ． １ ５−・−・・ＩＨ （１Ｂ Ｇ ＆
＠，ｓ Ｐ活性層、５．１６−−ｐ Ｉｎｏ．ｓ（
Ｇ ａ ａ＜Ａ ＩＩ ｎ．ｉ） ｔｓ Ｐクラッド層
、６ ． １ ７−・・・ｐＩ ｎｌ，．ｓＧａｌＬ
ｓＰ−’ｙチング停止層、７．１８−・・・・・ｎ−Ｇ
ａＡｓ電流阻止層、８，２１・・・・・・ｐ一ＧａＡｓ
コンタクト層、９．２０・・・・・・ストライプ状の溝
、１０，２２・・・・・・ｐ側電極、１１．２３・・・
・・・ｎ側電極、１ ９””・・ＩｎａｓＧａｅ．ｓＰ
又はＩｎＡｊ７ＧａＰ保護層、
を示す。FIG. 1 is a sectional view showing the structure of a semiconductor laser according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of a semiconductor laser obtained by a conventional technique. In the figure, 1, 12... n-GaAs substrate, 2, l3...
...H-GaAs buffer layer, 3. 1 4--
n I nag (Gaa.4Aj'as) P cladding layer, 4. 1 5-・-・IH (1B G &
@,s P active layer, 5.16--p Ino. s(
G a a<A II n. i) ts P cladding layer, 6. 1 7-...pI nl,. sGalL
sP-'y Ching stop layer, 7.18-...n-G
aAs current blocking layer, 8, 21...p-GaAs
Contact layer, 9.20...Striped groove, 10,22...p-side electrode, 11.23...
...n-side electrode, 19""...InasGae. sP
or InAj7GaP protective layer.
Claims (1)
０．５（Ｇａ＿１＿−＿ｘＡｌ＿ｘ）＿０＿．＿５Ｐ（
０≦Ｘ≦１）であり、このダブルヘテロ接合接合構造部
の上に電流阻止層を具備した半導体レーザ装置において
、Ｐ（リン）を含む保護層を表面に設けた少なくとも２
層構造とからなる電流阻止層を有したことを特徴とする
半導体レーザ。The double heterojunction structure formed on the semiconductor substrate is In
0.5(Ga_1_-_xAl_x)_0_. ＿5P(
0≦X≦1), and in a semiconductor laser device including a current blocking layer on the double heterojunction junction structure, at least two
1. A semiconductor laser comprising a current blocking layer having a layered structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18941989A JPH0353578A (en) | 1989-07-21 | 1989-07-21 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18941989A JPH0353578A (en) | 1989-07-21 | 1989-07-21 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0353578A true JPH0353578A (en) | 1991-03-07 |
Family
ID=16240948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18941989A Pending JPH0353578A (en) | 1989-07-21 | 1989-07-21 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0353578A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL9401649A (en) * | 1993-10-06 | 1995-05-01 | Gold Star Co | Semiconductor laser and method for its manufacture. |
-
1989
- 1989-07-21 JP JP18941989A patent/JPH0353578A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL9401649A (en) * | 1993-10-06 | 1995-05-01 | Gold Star Co | Semiconductor laser and method for its manufacture. |
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