JPH0353536A - 導体のボンディング方法 - Google Patents

導体のボンディング方法

Info

Publication number
JPH0353536A
JPH0353536A JP2181699A JP18169990A JPH0353536A JP H0353536 A JPH0353536 A JP H0353536A JP 2181699 A JP2181699 A JP 2181699A JP 18169990 A JP18169990 A JP 18169990A JP H0353536 A JPH0353536 A JP H0353536A
Authority
JP
Japan
Prior art keywords
bonding
conductor
support member
ribbon
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2181699A
Other languages
English (en)
Inventor
Norman R Stockham
ノーマン　ロイ　ストックハム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Welding Institute England
Original Assignee
Welding Institute England
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Welding Institute England filed Critical Welding Institute England
Publication of JPH0353536A publication Critical patent/JPH0353536A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は例えば半導体の製造における集積回路との導体
のボンディング方法に関し、特に集積回路のチップへ導
き取り付けるための新しい方法に関する。
（従来の技術） ファインワイヤの超音波ボンディングはよく知られ、例
えばワイヤ２を送る溶接器具１（第１図）を含む超音波
ヘッドでのウェッジボンディングはシリコンチップ４上
の適当な用意された金属処理されたパッド３上で第１の
結合を行なう。
（第１図（ｂ）１及び第１図（ｂ）２）。器具ヘッド１
はワイヤ２の長さ引き出すためチップ（第１図（ｂ）３
と第１図（ｂ）４）に対して動かされ、適当な用意され
た金属処理されたパッド５又は外部の回路のトラック（
第１図（ｂ）５）への第２の結合を行なう。
この後者の結合は十分強く、ワイヤ２はシリコンチップ
からの次のワイヤ接続を準備するこの位置（第１図（ｂ
）６）での裂かれるためワイヤにとって十分変形させら
れる． ポールボンディングと知られる他の方法において、ワイ
ヤは溶接器具７（第２図）を介して同軸的に通り抜け、
次にボール８は溶解によってワイヤ９の端の上に形成さ
れる。典型的にボールの直径はワイヤの直径の２倍であ
る。そしてこれは適当な高温でのボンディングを提供す
るためのシリコンチップｌｌ上の金属被覆１０を用いて
の結合の中に超音波エネルギー技術によって圧縮される
。この特別な装置はワイヤがいずれかの方向において（
ポールボンディングがワイヤの軸について対称的である
ので）適当な回路のトラックへのチップの外にある次の
毛のように細いウェッジボンディングを用いて始めるこ
とができるという利点を有している。ポールボンディン
グの欠点はボールが変形したり、典型的にみて４つワイ
ヤの直径まで及ぶ。第２図Ｂに示すように、最小限のス
ペースの制限は第２図Ａで中心間の２００ミクロンのス
ペースを持つ１００　Ｘ　１００ミクロンとなる金属処
理されたパッド間に利用させることができる。第２図Ｂ
のように１００ミクロンの中心間のスペースを持つ５０
Ｘ５０ミクロンのパッドサイズを小さくすることは隣接
するポールボンディングの間を短くしオーバーラップす
るポテンシャルに導く。またワイヤの比較的な柔軟性に
よって各々のワイヤ又はワイヤの組の間の充填不良（シ
ョート）に対して損傷を生じる振動の可能性がある。し
かしながら、大変高い周波数装置においてワイヤは重要
なインダクタンスを意味する。
約２０年も知られる他の製造方法はいわゆるテープ自動
ボンディング（ＴＡＢ）である。ここで電気的な接続は
順々にシリコンチップ上の金属処理されたパッドとボン
ディングされる薄片でエッチングされる。これはリード
の接近や単一の動作で作られるボンディングの全てを用
いた他部分の製造を可能とすることを意味する。テープ
は平らにエッチングされた金属薄片またはキャリアとし
て動作するプラスチックフィルムに付着したエッチング
された金属処理された層、又はプラスチックタップ上で
処理される接着剤と一緒にエッチングされた金属処理さ
れた層のいずれかからなる。この技術は長い時間知られ
ていたが工業利用性としては２つの理由で著しく進歩し
ていない。最後に、エッチングされた薄片または金属処
理されたテープと、チップまたはテープでのトラックの
金属処理されたパッド上のいずれかに突出又は衝突の付
加なしでのシリコンチップとの間の十分なボンディング
を確実にすることは困難である。これらの衝突はチップ
に関してテープの平坦でのエラーを引き起こし、特に第
２図Ａからわかるようにチップ上の不動態化層にもかか
わらずお互いに金属表面を接続できる。典型的にみて、
付加された金属処理された層は適切な動作を可能にする
ため不動態化層ｌ２より上に上がる衝突を提供するため
にチップ上に沈積させられる。そしてチップはＴＡＢ工
法の利点を得る特別に製造されなければならない。
またＴＡＢ工法はりードアレイの大変大きい部材がテー
プのリール上での印刷又はエッチングできるので大部分
の製造に理想的には適している。しかし、これは開発に
及び特殊化された構成部品に及ぶ製造にとって欠点であ
る。というのは全体のエッチング方法と相互の結合動作
は関係する特別な装置にマッチしなければならないから
である。さらに、テープは高価であって各装置毎に設計
しなければならない。
（発明の概要及び作用） 本発明によれば、集積回路の接点と、支持部材と、導体
とをボンディングする方法において、導体支持部材から
集積回路とボンディングされる導体とを離すためボンデ
ィングされる導体を分けることに特徴がある。
本発明を用いて装置は行なわれる試験のために支持部材
と仮に結合される。そして支持部材は最後のキャリアと
永久にボンディングされ得る導体の自由端を離す装置か
ら離間される。
典型的に集積回路は他の装置が使用できるがシリコンチ
ップからなる。導体はワイヤ又はリボンの形状をなす。
第１の先の方法において仮のボンディングはハンドリン
グ効果にとって中間のサブストレートを構成する支持部
材に一般的なコネクタワイヤ（または好ましくは長四角
形のリボン）として先ず作られ、自由端はワイヤ又はリ
ボンに対してウェッジボンディング機械を使用するＩＣ
チップに続いて接続される。これらの後者のボンディン
グはワイヤまたはリボンはチップへの結合に対して容易
に裂くことができ、さらにコネクタの動作は再びチップ
への次の接続に対する支持部材上での新しい位置に仮に
ボンディングされるように導く。
第２の方法において永久的な接続はハンドリングの効果
にとって中間のサブストレートを構成する支持部材に続
いてボンディングされるワイヤ又はリボンを用いたウェ
ッジボンディング機械を使用して一般的なワイヤ（又は
好ましくは長四角形のリボン）によってシリコンチップ
になされる。
そして、第１のボンディングはシリコンチップ上になさ
れ、第２の仮のボンディング又は付着は結合リードと仮
のサブストレート又は支持部材（フラッシュ）の間に成
し遂げられる。キャリアサブストレートへの次の第２の
（仮の）取付を容易に壊すためのワイヤ又はリボンを可
能にするため十分に強いが仮の支持へのボンディングは
長期間で高い安全性を有していない。
中間のサブストレートまたは支持部材上の（仮の）ボン
ディングはもし必要ならば中間サブストレートへのワイ
ヤ又は好ましくはリボンを導くためのキャップ又は蓋を
ボンディングすることによって補強されつる。再び機械
的な強さの限界はこれらの仮の結合にとって要求される
ので全体的に似ていないプラスチックはキャップ及び支
持部材として機能させる。支持部材はワイヤ又はリボン
は取り付けられるために薄い金属薄片からなるがそれは
好ましくは構成のこの段階でのチップの試験に対する工
夫である。この目的のためにワイヤ又はリボンは絶縁体
として機能する接着剤を介して金属キャリアとボンディ
ングされ、またはさらにワイヤ又はリボンはプラスチッ
クのような適切な非接触キャリアとボンディングされる
。
相互に連結する導体又はリード線は好ましくは長四角形
のリボンの形状であってこれは振動に対してより堅いこ
とを提供し、また例えばマイクロ波装置のような高い周
波数能力を改善する。さらに、超音波ウェッジボンディ
ングを用いてリボンの形の悪さは結合の位置での比較的
に広さを小さくする。
本発明によれば直面する処理をどれか一つ選ぶべきであ
る。例えば、相互に連結するリード線を用いてチップは
適切なプラスチックの蓋及び基台を用いて内部に閉じ込
められ、結合されるリード線は次に仮のサブストレート
から離間される。プラスチック充填は適切な印をなし、
サブストレートを製造する動作にとってハンドリングさ
れるため結合されるリード線を用いてチップを可能にす
る。内部に閉じ込めることはチップを保持されないこと
を示し特にワイヤ又はリボンを用いての接続である。こ
れは汚れの影響又はチップの電気特性での物理的な応力
を防ぐ。適切なプラスチックはボリアミド（ＰＡＭ）又
はさらに高い完全感湿充填のために、良い機械的な強さ
及び適切な感湿の特性で超音波で結合されうるＬＣＰの
ようなポリエステル系芳香族又はボリブロビレン系硫化
物、ＰＰＳを補強する短ガラスを含む。一般的な超音波
圧搾ボンディング装置は２０−４０ＫＨｚのレンジでの
周波数で容易に利用される。
あるいはチップからの結合用のリード線（支持部材から
離間した後）は適切なトラック又はサブストレート上の
金属処理された接点又は大規模集積回路のようなシステ
ムネットワークにおけるプリント回路ボードにボンディ
ングされる。一つの方法において相互に連結するリード
線は各々に仮の又は中間のサブストレート及び主なサブ
ストレート上の回路トラックへのポンデイングされたワ
イヤから離間される。この外のリード線のボンディング
は超音波又は熱圧縮ウエッジボンディング又はハンダ付
けなどの周知な方法によって作られる。これはワイヤ又
は好ましくはリボンを用いてチップでの 本方法の利点はリボンの材質や大きさ又結合の位置が自
由にできる点であり、例えばシリコン装置におけるアル
ミニウム接続用リード線はアルミニウムの金属処理され
た接続パッド又はあるいは金の金属処理した接点を具備
するガリウムひ素装置における金のリード線を有する。
めっきしたワイヤ又はリボンはまた金属処理された接続
パッド又はプリント回路ボード又はサブストレート、例
えばスズ又は鉛−スズのめつきされたＣｕへのサブスト
レート取付をなすためハンダ付けの接続を可能にする。
また中間又は仮のサブストレートはスブロケット化され
たテープ又は金属の薄片のようなハンドリング効果にお
ける適切な材質で十分である。後述の記載はもしチップ
からの接続用のリード線がチップが次の電気回路の構成
要素と結合されるまえに電気的に試験されるならば適切
な絶縁層をもってコーティングされる必要がある。接続
用リード線の長さは本発明では可変でき、１ｍｍより小
さくも５ｍｍよりも大きくのできる。同様に接続用のリ
ード線は直径で４−５００μ、又は５−５００μの幅の
リボンからの任意のサイズが可能である。
（実施例） 以下、本発明の実施例を図面に基づいて説明する。
第３図にはウィンド２ｌを明示する支持部材２０が示さ
れている。支持部材２０は上述したようにブラスチック
または金属で作られ、例えばＡｕ，Ａｌ，Ｃｕなとの組
となっている導電性リボン２２．　２３が支持部材２０
にボンディングされる。使用において、接点２５．　２
６を有するシリコンチップ２４は支持部材上にボンディ
ング位置で一直線に並んでおり、またリボンは支持部材
２０に最初のボンディングされるリポン２２を用いて連
続的に取り付けられる。そしてリボンは供給からの位置
で裂かれ、その後続いて支持部材とリボン２３を形或す
るためのパツド２６との間を結合させる。
あるいはリボン２２．　２３は最初にワイヤウェッジボ
ンディング法を使ってシリコンチップ２４上で接点２５
．　２６にボンディングされ、リボンの自由端は支持部
材２０に仮にボンディングされる。長く及び短く終端の
ボンディングのためのリボンまたはワイヤの取付方法は
超音波エネルギー又は熱、ハンダ付け又は粘着性のもの
を使って結合を形成させるものである。
超音波ボンディングの使用はワイヤボンディングの他の
形成を用いるより接続点におけるリボンでの広さが比較
的小さくなる。金、アルミニウム１％ジリコン又は銅の
リボンを用いて、均一な３０μの幅のリボンを用いて、
良いボンディングを用いての広さはそれぞれ３−５μ、
４−７μ及び３−９μの値である。
実験はシリコンチップとプラスチック支持部材との間の
金属ワイヤとリボンのボンディングの実用性を確認する
ために行なわれた。そして、第４図Ａに示すように、２
５ミクロン倍率のＡＩｌ％Ｓｉワイヤ３０がシリコンの
表面３ｌと支持部材２０にとって適切な材質を構成でき
たＰＥＥＫ材料３２との間に張り渡っている。
第４図ＢはＰＰＳサブストレート３４への１２５ミクロ
ン倍率のワイヤ３３のボンディングをより詳細に示して
いる。
第４図Ｃはポリイミドタツブ３６へのリボン３５のボン
ディングを示している。第４図Ｄはシリコン３８とＰＰ
Ｓサブストレート３９との間のリボン３７のボンディン
グを示している。
支持部材２０への（仮の）ボンディングはそれ自身によ
って十分な強くできるが、支持にリボンを導くためにキ
ャップ又は蓋をボンディングすることによってボンディ
ングを補強することが時々必要となる。例えばボリアミ
ドのようなサーモプラスチックのカバー用のプレートで
補強された短ガラス繊維を用いた補強用のガラス性のポ
リイミドのような加塑性のプラスチックの基板が使かわ
れることができる。
第５図Ａは先のボンディングのカバー用のプレート、キ
ャップ又は蓋の縁をボンディングすることによる断面図
である。この縁又はカバー用のプレートの接続端はプラ
スチック材料のボンディングを容易にするために隣接す
る凹部４ｌを用いて共に狭い突出領域４０を提供するた
めに断面で適切な形状をしている。突出領域４０はいわ
ゆるエネルギー集中装置として機能し、一方凹部４ｌは
蓋のボンディング動作中圧搾される（フラッシュ）余分
な材料を保持するために機能する。
第５図Ｂは支持部材４２を構成するポリイミドサブスト
レート上に設けられ、かつリボンを横切るカバー用のプ
レート４３によって支える組の銅の導体のリボン２２．
　２３が示されており、サーモプラスチックはサブスト
レート（加塑性のプラスチック）を用いて密着型接着剤
でボンディング動作中の導体の周辺で形作られる。ここ
で、真のボンディングはサーモプラスチックと加塑性の
プラスチックの間で得られないが、ワイヤ又はリボンの
相互連結に対する適切な支持を提供するための機械的な
連結には十分である。また、チップは仮の支持体上に設
けらた接続用のリードを用いてこの位置に電気的に試す
ことができる。
支持部材２０と結合される一方、チップ２４は損傷のな
い同類や試験のために手で触れることである。最後にリ
ボン２２．　２３は本装置への次の取付に対してチップ
２４を外すためライン２２゜，２３゜に沿って離間させ
る。
（発明の効果） 以上説明したように、本発明によれば、リボンの材質や
大きさ又結合の位置が自由にでき、めっきしたワイヤ又
はリボンはまた金属処理された接続パッド又はプリント
回路ボード又はサブストレート取付をなすためハンダ付
けの接続が可能となる。
【図面の簡単な説明】
第１図は超音波ウェッジボンディングを示す図、 第２図はポールボンディングを示す図、第３図は本発明
の方法による結果を示す図、第４図Ａは２５μｍ倍率の
Ａｌ−１％ＳＬワイヤがシリコン及びポリエーテルエー
テルケトン（ＰＥＥＫ）上のＡ１薄膜にボンディングし
た様子を示す図、第４図Ｂは１２５μｍ倍率のＡＩ−１
％ＳＬワイヤがボリフエニレン硫化物（ＰＰＳ）にボン
ディングした様子を示す図、 第４図Ｃは７５Ｘ２５μｍ　Ａｌ−１％ＳＬリボンがポ
リイミドテーブにボンディングした様子を示す図、第４
図Ｄは７５Ｘ　２５μｍＡＩ−１％ＳｔリボンがＡＩ薄
膜とシリコンとポリフェニレン硫化物（ＰＰＳ）とを′
ボンディングした様子を示す図、 第５図Ａはキャップの縁の切り欠き断面図、第５図Ｂは
ポリイミドのキャップがボリミドサブストレート上の銅
のトラックにボンディングされている様子を示す縦部分
断面図である。 ２０・　・ ２２．　２３ ２４・　・ ２５．　２６ 支持部材、 ・・導体、 シリコンチップ、 ・・接点

Claims (9)

    【特許請求の範囲】
  1. （１）集積回路の接点（２５）と、支持部材（２０）と
    、導体（２２、２３）とをボンディングする方法におい
    て、導体支持部材（２０）から集積回路とボンディング
    される導体（２２、２３）とを離すためボンディングさ
    れる導体（２２、２３）を分けることを特徴とする導体
    のボンディング方法。
  2. （２）前記集積回路がシリコンチップ（２４）からなる
    請求項１に記載の導体のボンディング方法。
  3. （３）前記導体（２２、２３）がワイヤ又はリボンの形
    状である請求項１または２に記載の導体のボンディング
    方法。
  4. （４）前記導体（２２、２３）は支持部材（２０）と最
    初ボンディングされ、続いて自由端が回路と結合する請
    求項１〜３のいずれかに記載の導体のボンディング方法
    。
  5. （５）前記導体は集積回路によってボンディングを切断
    される請求項４に記載の導体のボンディング方法。
  6. （６）ボンディング工程はウェッジボンディング法を使
    用して行なわれる請求項１〜５のいずれかに記載の導体
    のボンディング方法。
  7. （７）前記支持部材（２０）上での仮のボンディングは
    前記支持部材上に導体を導くためキャップ又は蓋をボン
    ディングすることによって補強される請求項１〜６のい
    ずれかに記載の導体のボンディング方法。
  8. （８）前記導体（２２、２３）は長四角形のリボンの形
    状である請求項１〜７のいずれかに記載の導体のボンデ
    ィング方法。
  9. （９）離間させる工程の次に集積回路は離間された導体
    を経て主装置と接続される請求項１〜８のいずれかに記
    載のボンディング方法。
JP2181699A 1989-07-11 1990-07-11 導体のボンディング方法 Pending JPH0353536A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8915816.6 1989-07-11
GB898915816A GB8915816D0 (en) 1989-07-11 1989-07-11 Bonding electrical conductors

Publications (1)

Publication Number Publication Date
JPH0353536A true JPH0353536A (ja) 1991-03-07

Family

ID=10659836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2181699A Pending JPH0353536A (ja) 1989-07-11 1990-07-11 導体のボンディング方法

Country Status (4)

Country Link
US (1) US5054680A (ja)
EP (1) EP0408272A3 (ja)
JP (1) JPH0353536A (ja)
GB (1) GB8915816D0 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456404A (en) * 1993-10-28 1995-10-10 Digital Equipment Corporation Method of testing semiconductor chips with reusable test package
US5894983A (en) * 1997-01-09 1999-04-20 Harris Corporation High frequency, low temperature thermosonic ribbon bonding process for system-level applications
JPH11330134A (ja) * 1998-05-12 1999-11-30 Hitachi Ltd ワイヤボンディング方法およびその装置並びに半導体装置
US20040217488A1 (en) 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding
US8614514B1 (en) 2013-03-13 2013-12-24 Palo Alto Research Center Incorporated Micro-spring chip attachment using ribbon bonds
ITMI20131707A1 (it) * 2013-10-15 2015-04-16 Meccaniche Crizaf S P A Costruzioni Dispositivo tenditore per nastro trasportatore
IT202000012379A1 (it) * 2020-05-26 2021-11-26 St Microelectronics Srl Procedimento per fabbricare prodotti a semiconduttore, substrato, prodotto a semiconduttore e utensile corrispondenti

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441248A (en) * 1982-12-02 1984-04-10 Stanley Electric Company, Ltd. On-line inspection method and system for bonds made to electronic components
DE3370240D1 (en) * 1982-12-06 1987-04-16 Welding Inst Bonding leads to semiconductor devices
DE3543643A1 (de) * 1985-12-11 1987-06-19 Licentia Gmbh Verfahren zum aufbringen eines ic auf ein substrat
US4979663A (en) * 1986-08-27 1990-12-25 Digital Equipment Corporation Outer lead tape automated bonding system
DD266208A1 (de) * 1987-10-30 1989-03-22 Elektromat Veb Verfahren zur ermittlung von fehlkontaktierungen bei der herstellung von halbleiteranordnungen

Also Published As

Publication number Publication date
GB8915816D0 (en) 1989-08-31
EP0408272A2 (en) 1991-01-16
US5054680A (en) 1991-10-08
EP0408272A3 (en) 1991-12-11

Similar Documents

Publication Publication Date Title
US6344683B1 (en) Stacked semiconductor package with flexible tape
KR100278093B1 (ko) 반도체장치에탄성접촉구조물을장착하는방법
US5795818A (en) Integrated circuit chip to substrate interconnection and method
US5007576A (en) Testable ribbon bonding method and wedge bonding tool for microcircuit device fabrication
JP3006885B2 (ja) 相互接続のためのコンタクト構造、介在体、半導体アセンブリおよび方法
US6023103A (en) Chip-scale carrier for semiconductor devices including mounted spring contacts
US6248962B1 (en) Electrically conductive projections of the same material as their substrate
US6087201A (en) Method of manufacturing ball grid array electronic component
EP0683517A2 (en) Semiconductor device having semiconductor chip bonded to circuit board through bumps and process of mounting thereof
US4949224A (en) Structure for mounting a semiconductor device
US5440239A (en) Transferable solder bumps for interconnect and assembly of MCM substrates
EP0400324A2 (en) Semiconductor package
EP0729184A2 (en) Semiconductor package stack module and method of producing the same
US7049840B1 (en) Hybrid interconnect and system for testing semiconductor dice
JPH04277636A (ja) 半導体装置とその製造方法及びこれに用いる接合体
KR20050037430A (ko) 반도체 패키지 디바이스와 그의 형성 및 테스트 방법
JPH1183942A (ja) 集積回路チップのバーンインテスト基板及びこれを用いたノウングッドダイの製造方法
WO1996005614A1 (en) Flip chip bonding with non-conductive adhesive
JPH0353536A (ja) 導体のボンディング方法
JP2781019B2 (ja) 半導体装置およびその製造方法
US5559305A (en) Semiconductor package having adjacently arranged semiconductor chips
JPH09129672A (ja) 半導体パッケージのテープ自動結合構造
US5086335A (en) Tape automated bonding system which facilitate repair
JPS59222947A (ja) 半導体装置およびその製造方法
JP2894594B2 (ja) ソルダーバンプを有するノウングッドダイの製造方法