JPH0353061A - Method and device for vapor deposition to produce thin film of oxide superconductor - Google Patents

Abstract

PURPOSE:To form the compsn. of the thin film of the oxide super conductor to a prescribed compsn. with high accuracy by exactly controlling the vapor deposition rates of respective elements for forming oxides with the emission spectroscopic film thickness gages provided in respective evaporating sources at the time of formation of the thin film of the multi component oxide superconductor by the vapor deposition method. CONSTITUTION:Monitor heads 24, 25, 26 of the emission spectroscopic film thickness gages are exactly disposed on straight lines 17a, 18a, 19a connecting the evaporating source 17 for Y, the evaporating source 18 for Ba and the evaporating source 19 for Cu at the time of the formation of the thin film of the multi-component oxide superconductor having, for example, the compsn. YBa2Cu3O7 on the surface of a substrate 1, such as silicon wafer, by the vapor deposition method in a vacuum treatment chamber. Oxygen is supplied from an oxygen nozzle 23 and the substrate 1 is irradiated with O2 ions from a drift tube 22 of an ECR ion source. The vapors of the Y, Ba and Cu from the respective evaporating sources 17 to 19 are simultaneously detected and controlled by the monitor heads 24, 25, 26 so as to attain 1:2:3 and are blown to the substrate 1. These vapors are oxidized by the O2 ions. The thin film of the oxide superconductor having the compsn. YBa2Cu3O7 is thus deposited by evaporation on the substrate 1.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vapor deposition method and apparatus for producing an oxide superconductor thin film, and in particular, to a vapor deposition method and apparatus for producing an oxide superconductor thin film, and in particular, to a vapor deposition method and apparatus that use a plurality of evaporation sources and a plurality of emission spectroscopic film thickness meters. The present invention relates to a vapor deposition method and apparatus.

[Prior Art] In recent years, oxide superconductors have been discovered, and their superconducting critical temperature T. Since the temperature of superconducting material exceeds the temperature of liquid nitrogen (77 K), its application fields are rapidly expanding, and research is being actively conducted to make the superconducting material into thin films and wires.

The superconducting properties (critical temperature Te% critical current density Je, upper critical magnetic field Hc2) of this type of superconductor are greatly influenced by the composition, oxygen concentration, and crystallinity (single crystal, polycrystal, non-oriented, etc.) of the material. receive. For example, in a YBa2Cu30 superconductor with Tc = 90K, its composition is that the Y:Ba:Cu ratio is 1:2:3, the oxygen concentration y is 6.9, and the crystallinity is on the C axis. It is known that orientation or single crystal is a requirement for high Te, high J', and high HC2. Therefore, in order to make this type of superconductor into a thin film, (a) controlling the composition of the film, (b) controlling the oxygen concentration of the film, and (c) controlling the crystallinity are important points for improving the properties of the thin film. .

From this point of view, vapor deposition methods that can control individual evaporation sources independently are suitable for the production of oxide superconductor thin films, and research on the production of oxide superconductor thin films by vapor deposition methods is
It is actively carried out at many research institutions.

Among the above points, (a) control of membrane assembly is particularly important. As a representative example of controlling the composition using vapor deposition to produce a superconductor thin film, T. Teras
Hisa et al.'s paper (J.J. 8.P. Vol. 27
No. IL91 (1988)). In this paper, oxygen gas is introduced into the reaction chamber so that the pressure near the substrate is 10-2 Torr, and plasma is generated by a high-frequency coil placed between the substrate and the evaporation source. Then, three types of metals, yttrium, barium, and copper, are simultaneously deposited on the substrate surface using an electron beam evaporation source or a heated boat to create a thin film. After that, 500
Oxygen treatment at ℃ and T6. = 90K superconductor thin film was obtained. In this paper, as a composition control method, a crystal film thickness meter is prepared next to the substrate to monitor the amount of evaporation of each element and adjust the evaporation rate. Using a correspondence table between film thickness and number of atoms, the ratio of the number of deposited atoms can be quickly adjusted to meet the target.

[Problem to be solved by the invention] The work described in the above-mentioned paper is a highly skilled work, and the accumulation of know-how greatly influences the experimental results, so it is not something that anyone can do. Therefore, it is not practical. Furthermore, since a quartz crystal film thickness meter is used as the film thickness meter, when simultaneous evaporation is performed from a plurality of evaporation sources, the individual evaporation rates cannot be directly read using a single film thickness meter. Even if three film thickness gauges are used to control the individual evaporation rates, if the film thickness gauges are placed right next to the substrate, other evaporated matter will also be mixed in, and a quartz crystal film thickness gauge will not be able to distinguish between them.

Therefore, the precision in controlling the evaporation rate is poor, and there are problems with reproducibility.

Furthermore, if Bad, BaCO3, etc. adhere to a quartz crystal film thickness meter, there is a drawback that the meter does not operate normally due to the contamination.

A crystal film thickness meter measures film thickness using the frequency of the crystal, but that frequency also depends on the surrounding temperature. Therefore, film thickness gauges are usually equipped with a water cooling mechanism. When producing an oxide superconductor thin film, the substrate is heated to a high temperature, so if a crystal film thickness gauge is installed right next to the substrate, the water cooling mechanism will be heated by the substrate heating device, and there is a risk of damaging the water cooling mechanism. .

As described above, when attempting to precisely control the composition of an oxide superconductor thin film by vapor deposition, there are many problems with the quartz crystal film thickness meter. Therefore, the inventors of this application came up with the idea of producing such an oxide superconducting (iI-thin film) using a known luminescence spectroscopic film thickness meter.

An object of the present invention is to provide a vapor deposition method and an apparatus therefor that enable precise compositional control using an emission spectroscopic film thickness meter when producing an oxide superconductor thin film by vapor deposition.

[Means and effects for solving the problem] In order to achieve the above object, the present invention is configured as follows. That is, the vapor deposition method according to the first invention of this application is a vapor deposition method in which an oxide superconductor thin film is produced on a substrate by simultaneously vaporizing each constituent element of an oxide superconductor using separate evaporation sources. A special feature is that a dedicated emission spectroscopic film thickness meter is prepared for each, and the monitor head of the emission spectroscopic film thickness meter is placed on a straight line connecting the corresponding evaporation source and the substrate.

According to this evaporation method, the evaporated substance emitted from the evaporation source passes through a through hole in the monitor head of the luminescence spectroscopic film thickness meter, and then reaches the substrate. When the evaporated substance passes through this through hole, the evaporated substance is excited by electrons emitted from the monitor head and emits light. By spectroscopically analyzing this emission, the deposition rate of the evaporated substance on the substrate can be determined.

Therefore, the substrate adhesion rate determined by the emission spectroscopic film thickness meter is:
It can be obtained based on the evaporated substances that actually reach the substrate, and has extremely high reproducibility. In order to produce an oxide superconductor thin film, a plurality of combinations of such evaporation sources and emission spectroscopic film thickness meters are prepared.

In the vapor deposition method according to the second invention of this application, in the above-mentioned first invention, ECR is used to oxidize the evaporated substance.
While supplying oxygen ions from the ion source, oxygen gas from the oxygen spray nozzle, and evaporated substances from each evaporation source to the substrate, each evaporation source is individually controlled based on the output of each emission spectroscopic film thickness meter. It is characterized by control.

A vapor deposition method according to a third invention of this application is characterized in that, in the second invention described above, the emission intensity of the evaporated substance and the emission intensity of oxygen are simultaneously monitored using an emission spectroscopic film thickness meter. To fabricate an oxide superconductor thin film by vapor deposition, it is necessary to introduce oxygen gas as described above. The intensity may cause noise.

The reason is as follows. A luminescence spectrometer film thickness meter detects only the light at a specific peak wavelength of the emission spectrum characteristic of the evaporated substance by passing it through a filter. However, the emission spectrum of oxygen also contains a slight component with a peak wavelength unique to the above-mentioned evaporated substance, and this can become noise. Therefore, the influence of oxygen can be calculated by determining the emission intensity of oxygen in advance and simultaneously monitoring the emission intensity of the evaporated substance and the emission intensity of oxygen during vapor deposition.

This allows noise caused by oxygen to be removed.

A vapor deposition method according to a fourth invention of this application is characterized in that in the first invention described above, the oxide superconductor is a cuprate-based high-temperature superconductor having a perovskite structure.

The vapor deposition apparatus according to the fifth invention of this application is an apparatus for carrying out the vapor deposition method according to the first invention described above, and has the following features. That is, the present invention provides an evaporation apparatus for producing an oxide superconductor thin film on a substrate, which includes: an ECR ion source that supplies oxygen ions onto the substrate; an oxygen spray nozzle that supplies oxygen gas onto the substrate; and a plurality of evaporation nozzles. The present invention is characterized by comprising: a light emission spectroscopic film thickness meter prepared for each of the evaporation sources; and a position adjustment mechanism for adjusting the position of a monitor head of the light emission spectroscopic film thickness meter.

By using this vapor deposition apparatus, the above-described vapor deposition method can be carried out. In particular, the monitor head of an emission spectrometer film thickness meter can be adjusted to any position using a position adjustment mechanism, and by using this, the monitor head can be placed on a straight line connecting the evaporation source and the substrate. .

The vapor deposition apparatus according to the sixth invention of this application is the one in which the position adjustment mechanism is specifically specified in the fifth invention described above. In other words, this position adjustment mechanism consists of a bellows placed between the monitor head and the wall of the vacuum chamber, and a length that allows the length of the bellows to be adjusted individually at multiple positions along the circumferential direction of the bellows. a rotational flange disposed between the bellows and a wall of the vacuum chamber;

In this invention, the monitor head is attached to the wall of the vacuum chamber via the bellows, so the monitor head can be moved to any desired position. In order to fix the displacement of the bellows at a predetermined position, a length adjustment mechanism is used, and this length adjustment mechanism is provided at a plurality of positions along the circumferential direction of the bellows. By providing the length adjustment mechanisms at at least three equally spaced positions, the monitor head can be moved in three dimensions. When a rotating flange is provided between the bellows and the wall of the vacuum chamber, the bellows can rotate about its central axis, and the monitor head can be rotated at any rotational angle.

[Example J Next, embodiments of the invention will be described with reference to the drawings.

FIG. 1 is a front sectional view of an embodiment of the vapor deposition apparatus of the present invention. This vapor deposition apparatus is an apparatus for producing an oxide superconductor thin film having a structure of YBa2Cu30. This vapor deposition apparatus includes a processing chamber 7 for performing vapor deposition on the substrate 1 and an introduction chamber 2 for introducing the substrate 1 into the processing chamber 7. There is a valve 4 between the processing chamber 7 and the introduction chamber 2, the introduction chamber 2 is evacuated in the direction of arrow 6 via valve 5, and the processing chamber 7 is evacuated in the direction of arrow 9 via valve 8. .

The pressure in the processing chamber 7 is measured with a vacuum gauge 27.

The introduction chamber 2 includes a magnetically coupled substrate transfer mechanism 3 . This substrate transfer mechanism 3 can move the internal mechanism by moving the permanent magnet 3a located on the atmosphere side.

The processing chamber 7 mainly includes a device for holding the substrate, a plurality of evaporation sources, the same number of film thickness gauges, and a device for supplying oxygen.

The substrate holder 11 holds the substrate 1. Board holder 1
1 can move up and down and rotate around its axis. A through hole 12 is formed in the lower part of the side surface of the substrate holder 11, through which the substrate 1 can be installed on the substrate holder 11. The substrate 1 can be heated by radiant heat from the heater 10 above it. A rotatable shutter 14 is arranged below the substrate 1.

As shown in FIG. 2, the evaporation sources include an electron beam evaporation source 17 for yttrium, a Knudsen cell 18 for copper, and one barium river electron beam evaporation source.

Three emission spectroscopic film thickness meters are prepared corresponding to these evaporation sources, and each monitor head is placed between the evaporation source and the substrate. That is, the monitor head 2 is placed on the straight line 17a connecting the electron beam evaporation source 17 and the substrate 1.
4 and connect the Knudsen cell 18 and the substrate 1.
A monitor head 25 is placed on the etllll8a, and a monitor head 26 is placed on the straight line 19a connecting one electron beam evaporation source and the substrate 1. FIG. 2 clearly shows these relationships. In FIG. 1, only the two evaporation sources 17 and their monitor heads 24 are shown.

Returning to FIG. 1, the oxygen supply mechanism includes the drift tube 22 of the ECR ion source and the oxygen spray nozzle 23.
There is. The ECR ion source mainly consists of an ion source main body 21, a magnetic field generating coil 20 wound around the main body 21, and a transfer tube (drift tube) 22 for transporting a large amount of oxygen ions with low acceleration energy to the substrate surface. The arrow 29a is inserted into the ion source main body 21 through the flow rate adjustment device 28a.
Supply oxygen gas from the direction. As the ECR ion source, for example, the one described in Japanese Patent Application No. 63-275922 is used.

The oxygen blowing nozzle 23 has its tip disposed near the substrate 1, as shown in FIGS. 1 and 2. Oxygen gas is supplied to the oxygen blowing nozzle 23 from the direction of an arrow 29b through a flow rate adjustment device 28b.

Next, the position adjustment mechanism of the monitor head of the luminescence spectroscopic film thickness meter will be explained with reference to FIG.

The monitor head 24 is fixed to a flange 31, and this flange 31 is fixed to a flange of a pipe 35 with bolts. The other end of the pipe 35 is a rotating flange 37. A bellows 32 is provided at the center of the pipe 35.

On both sides of the bellows 32, the pipe 35 has discs 38, 39.
is fixed. The disk 38 has three bolt holes equally spaced in the circumferential direction. The disk 39 also has three screw holes formed at equal intervals in the circumferential direction. The three bolts 33 are passed through the bolt holes of the disk 38 and screwed into the three screw holes of the disk. Disk 38
One end of a scale plate 34 is fixed to the dial, and the other end is slidably supported on three discs. This bolt 33 and disk 38, 3
9 and the scale plate 34 constitute a length adjustment mechanism. That is, when the bolt 33 is screwed in, the disc 39 approaches the disc 38, and the bellows 32 contracts. bolt 33
are arranged at three equal intervals, so if the three bolts 33 are screwed in uniformly, the bellows 32 will contract uniformly, but if only a specific bolt 33 is screwed in, only a specific part of the bellows 32 will shrink. It turns out. For example, bolt 3 placed at the top
If only 3 is screwed in, only the upper part of the bellows 32 will shrink,
The monitor head 24 is displaced downward. By appropriately adjusting the screwing amount of the three bolts 33, the monitor head 24 can be freely moved up and down, left and right, and back and forth in a vacuum. The displacement of each part of the bellows 32 can be read on three scale plates 34 arranged at three equal intervals.

In this single position adjustment mechanism, the rotation flange 37 also allows the monitor head 24 to rotate around its axis. The outer flange 37a of the rotating flange 37 is fixed to the boat in the processing chamber with bolts, but when the bolts on the outer flange 37a are loosened, the inner sealing surface 37b
can be rotated freely. The sealing surface 37b is the pipe 35
Since the monitor head 24 is integrated with the monitor head 24, the monitor head 24 also rotates at the same time. However, when the bolts on the outer flange 37a are loosened, the pressure in the processing chamber becomes atmospheric, so this operation cannot be performed very often. In addition, if a structure that allows the monitor head to be rotated without breaking the vacuum is adopted instead of this type of rotating flange, the process chamber will not be adversely affected.

Next, the configuration of the emission spectroscopic film thickness meter will be explained with reference to FIG.

The monitor head 24 has a through hole 24a,
The evaporated substance 41 is made to pass through here. Thermionic electrons are generated from the filament 48, and the thermoelectrons hit the evaporated substance and excite the evaporated substance. The excited evaporated substance emits light with an emission spectrum unique to that substance. In addition, the introduced oxygen gas also emits light in the same manner. These lights pass through the passage 24b and are split into two at the mirror 49.

That is, the light 43a goes straight and the light 43b is reflected by the mirror 49. The light 43a traveling straight passes through a bandpass filter 44a for evaporated substances, where only light of a specific wavelength passes. The passed light is detected by a photomultiplier tube 45a. Similarly, the reflected light 43b passes through an oxygen bandpass filter 44b and passes through a photomultiplier tube 45.
Detected at b. The outputs of the two photomultiplier tubes 45a and 45b are manually supplied to a film thickness meter power source 46. Film thickness meter power supply 46
, a control signal 47 is sent to the power source of the electron beam evaporation source 17.
will be sent. The other two emission spectroscopic film thickness gauges 25 and 26 have a similar structure. The sensitivity of this luminescence spectroscopic film thickness meter is two orders of magnitude higher than that of a crystal resonator type film thickness meter.

Passage wavelength λ of the bandpass filter used in this example
is as follows.

For barium λ=554nm Yes!・For lithium: λ-407nm For copper: λ-325nm For oxygen gas: λ”257nm Note that the passing wavelength of the filter is not limited to the above,
Other peak wavelengths among the peaks of the emission spectrum of each element can also be used.

In this example, a hot filament was used to cause the evaporated substance and oxygen gas to emit light in the monitor head of the luminescence spectroscopic film thickness meter, but other means may be used to cause the emitted light to emit light.

Next, a procedure for producing a superconductor thin film having a composition of YBa2Cu30 using this vapor deposition apparatus will be explained.

First, the three monitor heads 24, 25 shown in FIG.
Adjust the position of 26. Hereinafter, only the monitor head 24 will be explained. The other monitor heads 25 and 26 are
It can be adjusted in the same way as the monitor head 24.

The processing chamber 7 in FIG. 1 is opened to the atmosphere, and the position of the monitor head 24 is adjusted so that the through hole 24a of the monitor head 24 is on the straight line 17a connecting the evaporation source 17 and the center of the substrate 1. To do this, as shown in FIG. 3, the three bolts 33 are adjusted appropriately to move the monitor head up and down, back and forth, and left and right. Furthermore, the monitor head 24 is rotated using the rotating flange 37. Finally,
The straight line 17a connecting the evaporation source 17 and the center of the substrate 1 is made to coincide with the center line of the through hole 24a of the monitor head 24. That is, the angle θ in FIG. 3 is made to be zero. These adjustments are mainly made with the naked eye. With the above operations, the rough position adjustment of the monitor head 24 is completed. All that remains is to repeat the actual deposition experiment and make minute positional adjustments.

Returning to FIG. 1, the substrate 1 includes St wafers MgO, S
rTiO3, YSZ, sapphire, etc. are used. The temperature of the processing chamber 7 is 10-8 Torr or less, preferably 10-'°T.
Evacuate to a vacuum of about orr.

The introduction chamber 2 is brought to atmospheric pressure, and the substrate 1 is set in the substrate transfer mechanism 3. Then, the introduction chamber 2 is evacuated to around 10'' Torr. Next, the valve 4 is opened, the substrate 1 is sent into the processing chamber by the substrate transfer mechanism 3, and the substrate holder 1 is
Set to 1. At this time, the substrate holder 11 is lowered, and the substrate holder 11 is rotated to an appropriate position so that the through hole 12 faces the substrate transfer mechanism 3.

Next, a method for finely adjusting the position of the monitor head 24 will be explained.

Yttrium is actually evaporated from the electron beam evaporation source 17, and a film is deposited on the substrate 1 while the monitor head 24 detects the emission intensity of yttrium. Then, this substrate 1 is taken out into the atmosphere and the amount of film adhesion is measured. Thereby, the relationship between the yttrium emission intensity detected by the monitor head 24 and the yttrium film deposition rate on the substrate 1 can be determined. Furthermore, by repeating this experiment, it is possible to evaluate whether the relationship between the luminescence intensity and the film deposition rate is always the same, that is, whether it is reproducible. If this reproducibility is not very good, it is determined that the position of the monitor head 24 is not adjusted correctly. In that case, the monitor head 24 is moved slightly and the same experiment is repeated.

Through such operations, it is possible to find the monitor head position that provides the best reproducibility of the relationship between emission intensity and film deposition rate. The optimum positions for the other monitor heads 25 and 26 can be found in the same way.

This completes the preparation work. Next, in FIG. 2, with the shutter 14 closed, the oxygen spray nozzle 23
Oxygen is supplied from (flow rate 15-203 CCM). EC
Oxygen gas was introduced into the R ion source (flow rate 0.65 CC).
M) A discharge is generated and oxygen ions are supplied from the drift tube 22. As a result, the substrate is irradiated with oxygen-based active species excited by the oxygen gas and oxygen ions.

By introducing oxygen in this way, the pressure near the substrate increases to 2
1 Set to about 0-'Torr. three evaporation sources 17,
From 18 and 19, yttrium, copper, and barium are evaporated. Three emission spectroscopic film thickness meters detect the emission intensity of each evaporated substance, and detect the yttrium, barium, and copper substrates.
A signal is sent to each evaporation source power supply so that the film deposition rate at the top is 1:2:3. Once each evaporation source reaches steady state,
Open the shutter 14. The substrate 1 is heated to 550 to 650° C. with a heater 10 (see FIG. 1). Then, the substrate 1 is rotated at a high speed of up to 12 Orpm.

This allows a uniform film to be produced. On the substrate surface, a reaction occurs between the evaporated substances Y, Ba, and Cu and oxygen ions and oxygen-based active species, and a superconducting phase is formed on the substrate surface.

When the predetermined deposition is completed, the three evaporation sources close their respective shutters and then stop their operation. However, the supply of oxygen gas and oxygen ions is continued until the substrate temperature falls below 400° C. to prevent oxygen from escaping from the thin film.

The Y-Ba-Cu-0 thin film produced in this example exhibited good superconducting properties of 90K class as it was taken out from the processing chamber. That is, processing such as annealing is not necessary.

The table below shows the composition ratio (atomic %) of the Y-Ba-Cu-0 thin film that was fabricated. This is the case where there was no such thing.

If the position of the monitor head is not adjusted, the YS
Even if the evaporation sources are individually controlled so that the composition ratio of Ba and Cu is 1:2:3, the resulting film has a Ba
= 1.00 ~ 3.00, Cu = 1.50
~4.50, which varies. That is, the reproducibility of the composition ratio is extremely poor. On the other hand, if the position of the monitor head is adjusted correctly, B a
- 1.9f3 ~ 2.04, Cu - 2.94
A good composition ratio of ~3.06 could be obtained.

This invention is applicable not only to the above-mentioned YBa2 Cu3 0, but also to other oxide superconductors as described below.

(1) MBa2Cu30, where M-lanthanum series elements (La, CeSPr, Nd, Pm. S m SE 12% G d ST b s D
y, HoSE r, Tm, Yb%Lu) (2) B f2S r2 Can-. CLITI
O, where n=1, 2, 3, 4 (3) T 12 Ba2 Ca++-I Cu. ,OF
Here, n=1, 2, 3, 4 (4) T 1 1B a2 C an-H C u.
o, where n-sl, 2, 3, 4, 5, 6 (5) Compounds with the same elemental composition as the above-mentioned compounds (other elements may be included) and other stoichiometry .

[Effect of the invention] In the vapor deposition method according to the first invention of this application, a dedicated emission spectroscopic film thickness meter is prepared for each evaporation source, and the monitor head is placed on a straight line connecting the evaporation source and the substrate. Therefore, the composition ratio of the oxide superconductor thin film can be precisely controlled with good reproducibility.

In the vapor deposition method according to the second invention of this application, the composition ratio is controlled using oxygen ions from the ECR ion source and oxygen gas from the oxygen spray nozzle as in the first invention. Better control of oxygen content.

In the vapor deposition method according to the third invention of this application, in the above-mentioned second invention, the emission intensity of the evaporated substance and the emission intensity of oxygen are simultaneously monitored using the emission spectroscopic film thickness meter.
Noise caused by the emission spectrum of oxygen can be removed.

In the vapor deposition method according to the fourth invention of this application, the above-mentioned first invention is applied to the production of a copper oxide-based high temperature superconductor thin film. can be manufactured with a good composition ratio.

A vapor deposition apparatus according to a fifth invention of this application is an apparatus for carrying out the vapor deposition method according to the first invention described above, and includes a position adjustment mechanism for adjusting the position of an emission spectroscopic film thickness type monitor head. By providing this, the composition ratio of the oxide superconductor thin film can be precisely controlled with good reproducibility.

A vapor deposition apparatus according to a sixth invention of this application is one in which a position adjustment mechanism is configured using a bellows and a rotating flange in the above-mentioned fifth invention. This allows the monitor head to be moved to any desired position with a simple configuration.

[Brief explanation of drawings]

FIG. 1 is a front sectional view showing an embodiment of the vapor deposition apparatus of the present invention, FIG. 2 is a perspective view of the main parts of the apparatus shown in FIG. 1, and FIG. 3 is a front sectional view of the monitor head position adjustment mechanism. , FIG. 4 is a schematic diagram of the luminescence spectroscopic film thickness meter. 1... Substrate 17, 18, 19... Evaporation source 21... ECR ion source body 23... Oxygen spray nozzle 24, 25, 26... Monitor head of emission spectroscopic film thickness meter

Claims (6)

[Claims] (1) In a vapor deposition method in which each constituent element of an oxide superconductor is evaporated simultaneously using separate evaporation sources to create an oxide superconductor thin film on a substrate, a dedicated emission spectroscopic film thickness meter is prepared for each evaporation source. . A vapor deposition method, characterized in that a monitor head of the emission spectroscopic film thickness meter is placed on a straight line connecting a corresponding evaporation source and a substrate. (2) In the vapor deposition method according to claim 1, each of the emission spectroscopic films is A vapor deposition method characterized by individually controlling each evaporation source based on the output of a thickness gauge (3) The vapor deposition method according to claim 2, wherein the emission spectroscopic film thickness meter simultaneously monitors the emission intensity of the evaporated substance and the emission intensity of oxygen. (4) The vapor deposition method according to claim 1, wherein the oxide superconductor is a cuprate-based high-temperature superconductor. (5) A vapor deposition apparatus for producing an oxide superconductor thin film on a substrate, comprising: an ECR ion source that supplies oxygen ions onto the substrate; an oxygen spray nozzle that supplies oxygen gas onto the substrate; a plurality of evaporation sources; A vapor deposition apparatus comprising: an emission spectroscopic film thickness meter prepared for each of the evaporation sources; and a position adjustment mechanism for adjusting the position of a monitor head of the emission spectroscopic film thickness meter. (6) In the vapor deposition apparatus according to claim 5, the position adjustment mechanism includes: a bellows disposed between the monitor head and a wall of the vacuum chamber; A vapor deposition apparatus comprising: a length adjustment mechanism that can individually adjust the length; and a rotating flange disposed between the bellows and a wall of a vacuum chamber.