JPH0351109B2 - - Google Patents

Info

Publication number
JPH0351109B2
JPH0351109B2 JP58140128A JP14012883A JPH0351109B2 JP H0351109 B2 JPH0351109 B2 JP H0351109B2 JP 58140128 A JP58140128 A JP 58140128A JP 14012883 A JP14012883 A JP 14012883A JP H0351109 B2 JPH0351109 B2 JP H0351109B2
Authority
JP
Japan
Prior art keywords
region
bit line
potential
word line
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58140128A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5946062A (ja
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP58140128A priority Critical patent/JPS5946062A/ja
Publication of JPS5946062A publication Critical patent/JPS5946062A/ja
Publication of JPH0351109B2 publication Critical patent/JPH0351109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
JP58140128A 1983-07-30 1983-07-30 半導体メモリ Granted JPS5946062A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58140128A JPS5946062A (ja) 1983-07-30 1983-07-30 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58140128A JPS5946062A (ja) 1983-07-30 1983-07-30 半導体メモリ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1846577A Division JPS53103330A (en) 1977-02-21 1977-02-21 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5946062A JPS5946062A (ja) 1984-03-15
JPH0351109B2 true JPH0351109B2 (enExample) 1991-08-05

Family

ID=15261546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58140128A Granted JPS5946062A (ja) 1983-07-30 1983-07-30 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS5946062A (enExample)

Also Published As

Publication number Publication date
JPS5946062A (ja) 1984-03-15

Similar Documents

Publication Publication Date Title
US11508728B2 (en) Semiconductor memory device, method of driving the same and method of fabricating the same
US4298962A (en) Memory
US4434433A (en) Enhancement mode JFET dynamic memory
KR100887866B1 (ko) 측면 사이리스터 및 트래핑층을 포함하는 실리콘 온 절연체판독-기록 비휘발성 메모리
JP5851595B2 (ja) 半導体記憶装置を提供するための技法
US6891225B2 (en) Dynamic semiconductor memory device
JP3683895B2 (ja) 半導体記憶装置並びに携帯電子機器
US5808328A (en) High-speed and high-density semiconductor memory
US4068217A (en) Ultimate density non-volatile cross-point semiconductor memory array
JP3554666B2 (ja) 半導体メモリ装置
KR101593612B1 (ko) 더블게이트 플로팅 바디 메모리 다바이스
JPS6057710B2 (ja) メモリ・セル
US5218217A (en) Dynamic random access memory device and method of manufacturing
JPH0738066A (ja) 接合電界型ダイナミックｒａｍおよびその製造方法
JP2005150765A (ja) 半導体記憶装置、その製造方法及び動作方法、並びに携帯電子機器
JPH0351110B2 (enExample)
JPS6158982B2 (enExample)
JPH1092954A (ja) 半導体記憶装置
JPS6227551B2 (enExample)
US5132748A (en) Semiconductor memory device
JPS6216027B2 (enExample)
JPS592379B2 (ja) 半導体メモリ
JPH0311549B2 (enExample)
US5270242A (en) Method for fabricatins dynamic random access memory device having a capacitor for storing impact ionization charges
JPS6158983B2 (enExample)