JPH0350806A - Perpendicular magnetic film - Google Patents
Perpendicular magnetic filmInfo
- Publication number
- JPH0350806A JPH0350806A JP18825689A JP18825689A JPH0350806A JP H0350806 A JPH0350806 A JP H0350806A JP 18825689 A JP18825689 A JP 18825689A JP 18825689 A JP18825689 A JP 18825689A JP H0350806 A JPH0350806 A JP H0350806A
- Authority
- JP
- Japan
- Prior art keywords
- film
- perpendicular magnetic
- target
- substitution
- ferrite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910017052 cobalt Inorganic materials 0.000 abstract description 6
- 239000010941 cobalt Substances 0.000 abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 238000006467 substitution reaction Methods 0.000 description 17
- 230000005415 magnetization Effects 0.000 description 10
- 239000002689 soil Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、垂直磁化異方性を有し、垂直磁気記録、光磁
気記録媒体等に使用される酸化物６直磁化膜に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a 6-oxide diagonally magnetized film having perpendicular magnetization anisotropy and used in perpendicular magnetic recording, magneto-optical recording media, and the like.
（従来の技術）
高密度記録の可能な新しい磁気記録方式として、垂直磁
気記録と光磁気記録か研究されている。これらの記録方
式に用いられる媒体は、膜の□□□直方向に磁気異方性
を備えた６直磁化１１’ｌｕを使用する必要かある。(Prior Art) Perpendicular magnetic recording and magneto-optical recording are being studied as new magnetic recording systems capable of high-density recording. The media used in these recording methods must use 6-direct magnetization 11'lu, which has magnetic anisotropy in the direction perpendicular to the film.
特開昭６１−１１１５１１号公報において、コバルトフ
ェライトのＧｏまたはＦｃの一部をＭｎやＡ＋１の非磁
性原子で置換することにより、飽和磁化Ｍｓを小さくし
て垂直磁化膜とするものか開示されている。また、光磁
気記録媒体の場合、従来の希土類−遷移金属系とは異な
り、耐酸性および大きな磁気光学効果を有するコバルト
フェライト系スピネル薄膜等か報告されている。JP-A-61-111511 discloses that by substituting a part of Go or Fc of cobalt ferrite with non-magnetic atoms such as Mn or A+1, the saturation magnetization Ms is reduced and a perpendicularly magnetized film is obtained. There is. Furthermore, in the case of magneto-optical recording media, cobalt ferrite-based spinel thin films have been reported that have acid resistance and a large magneto-optical effect, unlike conventional rare earth-transition metal-based media.
（発明か解決しようとする課題）
しかし、コバルトフェライトは本来等方的な材料である
ため、 Ｋｕ上≧２π−５２（Ｋｕ土は垂直異方性定数
、Ｍｓは飽和磁化）、あるいはｔｌｃ上＞ＩＩｃ／／（
１１ｃ上は垂直方向の保磁力、ＨＣ／／は面内方向の保
磁力）、ＳＱ上＞ＳＱ／／ （ＳＱ土は垂直方向の角形
比＝Ｌ／１３＋−、りＱ／／は面内方向の角形比）か得
られにくく、垂直磁化膜となりにくいという問題点があ
った。(Problem to be solved by the invention) However, since cobalt ferrite is originally an isotropic material, Ku≧2π-52 (Ku soil has a perpendicular anisotropy constant, Ms is saturation magnetization), or tlc≧ IIc//(
11c top is vertical coercive force, HC// is in-plane coercive force), SQ top > SQ// (SQ soil is vertical squareness ratio = L/13+-, riQ// is in-plane direction There was a problem that it was difficult to obtain a squareness ratio of
本発明は、上記従来技術の問題点に鑑み、良好な垂直磁
気異方性を有する垂直磁化膜を提供することを目的とす
る。SUMMARY OF THE INVENTION In view of the problems of the prior art described above, an object of the present invention is to provide a perpendicularly magnetized film having good perpendicular magnetic anisotropy.
（課題を達成するための手段）
上記の目的を達成するため、本発明の垂直磁化膜は、Ｃ
ｏＪｅ：＋−１１−ＶＣｕ、０４て示され、かつｘ、ｙ
の値の範囲か０．５≦ｘ≦２．０．０≦ｙ≦０．４であ
ることを特徴とする。(Means for achieving the object) In order to achieve the above object, the perpendicularly magnetized film of the present invention has C
oJe: +-11-VCu, denoted as 04, and x, y
The range of values is 0.5≦x≦2.0.0≦y≦0.4.
（作用）
上述の組成とすることにより、すなわち、ＣｏｘＦｅ３
−またはＦｅをＣｕて置換することにより、ｔｉｃ上／
Ｈｃ ｕ、ＳＱ上／ Ｓ Ｑ ｕが向上し、膜の垂直
性が良くなる。(Function) By having the above composition, that is, CoxFe3
- or by replacing Fe with Cu, on the tic/
Hc u, SQ on/S Q u is improved, and the verticality of the film is improved.
Ｃｕ置換量であるｙの値は０．４未満でなければ、ファ
ラデー回転角か小さくなる。また、 Ｃｏの量であるＸ
の量を前述の範囲とした理由は、この範囲を外れると、
やはりファラデー回転角か小さくなるためである。Unless the value of y, which is the amount of Cu substitution, is less than 0.4, the Faraday rotation angle will be small. Also, the amount of Co is X
The reason why we set the amount of
This is because the Faraday rotation angle becomes smaller.
（実施例）
実施例として、ＧＯ＋、 Ｊｅ １．６ｃｕ０．２ｏ４
で表わされるＣｕ置換Ｃｏフェライト垂直磁化膜に例を
とって説明する。(Example) As an example, GO+, Je 1.6cu0.2o4
This will be explained by taking as an example a Cu-substituted Co ferrite perpendicular magnetization film represented by:
（ターゲットの作成〕
所望の組成となるように、Ｃｏｏ 、 Ｆｅ２Ｏ：１．
ＣｕＯの粉末を調合し、ボールミルて２０時間粉砕し
た後、８００℃で３時間、空気中で仮焼した。(Creation of target) Coo, Fe2O:1.
CuO powder was prepared, pulverized in a ball mill for 20 hours, and then calcined in air at 800° C. for 3 hours.
仮焼後、ＦＩＴびボールミルて２０蒔間粉砕した後、乾
燥させ、バインダーとしてのポリビニルアルコールと混
練し、プレス成形した。After calcining, the product was crushed using an FIT and ball mill for 20 millimeters, dried, kneaded with polyvinyl alcohol as a binder, and press-molded.
成形後、１０５０°Ｃて３時間、空２中て熱処理し、多
結晶状のＣｏフェライトで直径が約１０ｃｍの円盤状焼
結体を得、この焼結体をＣｕバッキングプレートにボン
デインク加工し、ターゲットとした。After molding, heat treatment was performed in air at 1050°C for 3 hours to obtain a disc-shaped sintered body of polycrystalline Co ferrite with a diameter of approximately 10 cm, and this sintered body was bonded to a Cu backing plate. targeted.
高岡波スパッタリング装置にコーニンク社製ガラス基板
であるコーニング７０５９を取付け、装置内を６．５Ｘ
ｌＯ−５Ｐａまて排気した後、装置内に計ガスを７Ｐａ
程度になるまで導入した。Corning 7059, a glass substrate manufactured by Konink, was attached to the Takaoka wave sputtering equipment, and the interior of the equipment was 6.5X.
After exhausting the gas to 1O-5Pa, the gauge gas was pumped to 7Pa.
It was introduced to a certain extent.
その後、基板とターゲットとの間に所定の高周波電圧を
印加してグロー放電を開始し、放電により生じたＡｒ◆
て前記ターゲット表面をスパッタし、基板上にＣ０Ｉ２
Ｆｅ、、 ６ＣＬＩＱ、 ２０４膜を作成した。After that, a predetermined high frequency voltage is applied between the substrate and the target to start glow discharge, and Ar◆ generated by the discharge
The target surface is sputtered, and C0I2 is deposited on the substrate.
A Fe, 6CLIQ, 204 film was created.
この時の基板温度は３００℃とし、投入電力は２ 、２
Ｗ／ｃｍ２とし、また、膜厚か０．５ｇｍとなる所定
の時間スパッタした。The substrate temperature at this time was 300°C, and the input power was 2,2
W/cm2, and sputtering was performed for a predetermined time to give a film thickness of about 0.5 gm.
この膜をガラス基板と共に６００℃で３蒔間、空気中で
熱処理し、結晶化を進めた。This film was heat-treated together with a glass substrate at 600° C. for 3 cycles in air to promote crystallization.
（膜評価） 作成した膜の結晶性をＸ線回折で調べた結果。(Membrane evaluation) Results of examining the crystallinity of the created film using X-ray diffraction.
成膜後も熱処理後も（：１１１）方向のピークか強い多
結晶であった。Both after film formation and after heat treatment, the film was polycrystalline with a strong peak in the (:111) direction.
膜面内（／／）および膜垂直（上）方向の磁化特性を振
動式磁力計（ＶＳＭ）で測定した結果、垂直方向の方が
保磁力Ｈｃおよび角形比ＳＱか大きく、この膜が垂直磁
化膜であることかわかる。As a result of measuring the magnetization characteristics in the in-plane (//) and perpendicular (top) directions of the film using a vibrating magnetometer (VSM), the coercive force Hc and squareness ratio SQ were larger in the perpendicular direction, indicating that this film is perpendicularly magnetized. I can see that it is a membrane.
：ＪＳ１図はこのｊ１！２のＢ−Ｈヒステリシスループ
てあり、上は垂直方向、〃は面内方向を示している。ま
た、比較のため、Ｃｕて置換していないＣｏフェライト
である（：ｏ１４Ｆｅｒ、 ６０４のＢ−Ｈヒステリシ
スループを第２図に示す。第１図から分かるように、Ｃ
ｕて一部置換したものは、垂直方向の方か面内方向より
ｌｉｅ、 ＳＱともに大きく、ループの角形性も良好で
あり、垂直磁化ｉ１Ｑとなっている。: The JS1 diagram shows the B-H hysteresis loop of j1!2, with the upper side showing the vertical direction and 〃 showing the in-plane direction. For comparison, Fig. 2 shows the B-H hysteresis loop of Co ferrite (:o14Fer, 604) without Cu substitution.As can be seen from Fig. 1, C
In the case of partial substitution by u, both lie and SQ are larger in the vertical direction than in the in-plane direction, the squareness of the loop is also good, and the perpendicular magnetization is i1Q.
方、第２ ［’１４のＣｔ＋て置換しないものは、垂直
方向の方と面内方向のＨｃ、 ＳＱともほとんど回して
あり、ループの角形性も悪く、垂直磁化膜となっていな
い。On the other hand, in the case where Ct+ is not substituted in the second ['14], Hc and SQ in the vertical direction and in-plane direction are almost all rotated, the squareness of the loop is poor, and it is not a perpendicularly magnetized film.
同様に前記ｍ成のＣｕで一部置換したＣｏフェライトと
、Ｃｕで置換していないＣｏフェライトの６３゜ｎ１１
の波長におけるファラデーループを測定した結果をそれ
ぞれ第３図、第４図に示す。第３図と第４図との対比か
ら分かるように、Ｃｕ置換したファラデールーズの角形
比（θｒｒ／θ２．ｉ）が大きく、光磁気記録媒体とし
て使用可能である。Similarly, 63°n11 of Co ferrite partially substituted with m-component Cu and Co ferrite not substituted with Cu.
The results of measuring the Faraday loop at the wavelengths of are shown in FIGS. 3 and 4, respectively. As can be seen from the comparison between FIG. 3 and FIG. 4, the squareness ratio (θrr/θ2.i) of Cu-substituted Faraday leuse is large and can be used as a magneto-optical recording medium.
［Ｃｕ置換量と特性との関係］
Ｃｏ、６Ｆｃ、 、０．を基準組成とし、このうち、Ｃ
。[Relationship between Cu substitution amount and properties] Co, 6Fc, , 0. is the standard composition, of which C
.
の一部なＣｕて置換したＣｏｔ、 ａ−ｘＦｅ１４Ｃｕ
、１０４について、置換：ＩＳ： Ｘを変えて垂直方向
の保磁力１１ｃ上、飽和磁化Ｍｓ、ファラデー回転角０
１−１垂直方向と面内方向の保磁力の比Ｈｅ上／ ＨＣ
ｎ、角形比ＳＱ上／ＳＱ／ｌ、ファラデーループの角形
比θＦｒ／ ＯＦＳを測定、算出した。なおファラデー
回転角は波長６３０ｎｍてｎ１４定した。その結果を表
１に示す。なお、表１は、その最下段（試料Ｎ０６）に
、Ｃｏでなく、Ｆｅの一部をＣｕで置換した例も示して
いる。Cot with partial Cu substitution, a-xFe14Cu
, 104, substitution: IS: Change X to have vertical coercive force 11c, saturation magnetization Ms, Faraday rotation angle 0
1-1 Ratio of coercive force in vertical direction and in-plane direction He/HC
n, squareness ratio SQ/SQ/l, and squareness ratio θFr/OFS of Faraday loop were measured and calculated. Note that the Faraday rotation angle was constant at n14 at a wavelength of 630 nm. The results are shown in Table 1. Note that Table 1 also shows an example in which part of Fe was replaced with Cu instead of Co in the bottom row (sample No. 06).
表１から分かるように、ｘ＝０．０５〜０．３５の範囲
において、ｌｉｅ土／ ｔｉｃ／／ 、 ＳＱ上／ＳＱ
／／、ＯＦｒ／ ＯＦＳかすべて向−１−シ、特にｌｌ
ｃ上／１ｌｃｌｚの向上か顕著であることか分かる。Ｆ
ｅにＣｕを置換した場合も良好な値か得られている。As can be seen from Table 1, in the range of x = 0.05 to 0.35, lie soil/tic//, SQ upper/SQ
//, OFr/OFS or all directions, especially ll
It can be seen that the improvement of c/1lclz is remarkable. F
Good values were also obtained when Cu was substituted for e.
Ｃｏの一部をＭｎて置換したＣｏｔ、 ｌ＞−ｘＦｅｌ
、 ４Ｍｌ１ｙ０４について、置換量Ｘを変えた場合の
前記１１ｃ土／１１ｃ／／ 、 ＳＱ土／ＳＱ／／およ
びファラデーループの角形比０４１．−／ ＯＦＳの変
化を調べ、その結果を前記Ｃｕて置換した場合と対比し
てそれぞれ第５図、第６図および第７図に示す。第５図
ないし第７１］から分かるように、Ｍｎ置換の場合、磁
化方向か面内方向で優位となっているのに比較し、Ｃｕ
置換の場合には、わずかな置換ｒＵＩＸて眞直磁化特性
を良好にする効果かあり、また、第５図および第６図を
参照すれば、置換量Ｘか０．２までの範囲において置換
量か多いほどＨｃ上／ＩＩｃ／／、ＳＱ上／５Ｑｌｌか
向上し、０．２〜０．４の範囲てほぼ一定になることか
分かる。また、第７図から分かるように、０Ｆｒ１０Ｆ
、、の値は、置換ｊｊ： Ｘか０．２以上て０．９以−
Ｌとなり、光磁気記録媒体への応用かり能となることか
分かる。Cot with Mn replacing a part of Co, l>-xFel
, 4Ml1y04, the above 11c soil/11c//, SQ soil/SQ// and the squareness ratio of Faraday loop 041. when the substitution amount X is changed. -/The change in OFS was investigated, and the results are shown in FIGS. 5, 6, and 7, respectively, in comparison with the case where Cu was substituted. As can be seen from [Figs. 5 to 71], in the case of Mn substitution, the magnetization direction or in-plane direction is dominant, whereas Cu
In the case of substitution, a small amount of substitution rUIX has the effect of improving the direct magnetization characteristics, and if you refer to FIGS. It can be seen that the higher the value, the better the Hc/IIc// and the SQ/5Qll, and it remains almost constant in the range of 0.2 to 0.4. Also, as can be seen from Figure 7, 0Fr10F
The values of , , are permutation jj: X or 0.2 or more and 0.9 or more -
It can be seen that it becomes possible to apply it to magneto-optical recording media.
また、表２は、Ｃｏｔ、 ２Ｆｅ１．１３０４の、ｖ１
成のものと、このＭ（成において、ＦｅについてＣｕ置
換猜を変えた場合（試料Ｎｏ＝７〜１０）の前記各個を
示し、また、Ｆｅの−１−を前記１．８程度にしてＣｏ
についてＣｕの置換量を変えた場合（試寧ＩＮｏ＝ ｌ
ｌ、１２）の＋ｉｉｊ記各値を各個。表２から分かる
ように、Ｃｕ置換によりＩｌｃ土／ Ｈｃｌｚ 、 Ｓ
Ｑ土／ＳＱｕ’ｆ−か向上したか、試料Ｎｏｌ０のよう
に、Ｇｕ置換量か０．５になると、ＯＦおよびＳＱ土／
ＳＱ〃か低下する傾向か見られる。In addition, Table 2 shows v1 of Cot, 2Fe1.1304.
This M (former) shows the above-mentioned respective pieces when the Cu substitution amount for Fe is changed (sample No. = 7 to 10), and -1- of Fe is set to about 1.8 and
When the amount of Cu substitution is changed for (Trial INo = l
1, 12) +iiij each value. As can be seen from Table 2, by Cu substitution, Ilc soil/Hclz, S
Q Soil/SQu'f- has improved, as in sample No. 0, when the Gu substitution amount reaches 0.5, OF and SQ Soil/
It can be seen that SQ〃 is on the decline.
また１表３は、Ｇｏ、 Ｊｅ＋、 ３０４の組成のもの
と、この組成において、ＦｅについてＧｏ置換量を変え
た場合（試料Ｎｏ＝ １３〜１６）の前記各個を示す。Furthermore, Table 1 shows the compositions of Go, Je+, and 304, and the cases where the amount of Go substitution for Fe was changed in this composition (sample Nos. 13 to 16).
試料Ｎｏ１４のように、Ｃｕｆｊｌ換量か０．０５以」
二になると、Ｉｌｃ上／ＩＩｃ／／、ＳＱ上／ＳＱ／／
か向上する。Like sample No. 14, the Cufjl conversion amount is 0.05 or more.
When it comes to two, on Ilc/IIc//, on SQ/SQ//
or improve.
表４および表５は、未発ＩＪＪとの比較のため、それぞ
れＣｏあるいはＦｅの代わりにＭｎ、 Ａｌで置換した
例を示すものて、いずれも、これら訃またはＡ１の置換
により、
１１ｃ土／
Ｃ１／
ＳＱ土／５Ｑｌｌは横ばいか
あるいは低下している。Tables 4 and 5 show examples in which Mn and Al were substituted for Co or Fe, respectively, for comparison with undeveloped IJJ. /SQ Sat/5Qll is flat or declining.
（以下余白）
表
表
＊）１１＝＋４＋、ｏ７ｒｅ＋、ａコしｕｑ、（Ｕ４Ｎ
ｏ ｌ ２＝切ｏ、 ｓ＋＋Ｆｅ＋、 ｕ＜Ｃｕｏ、
２０４ｂ２（）・（ｏ＋、Ｊｅ、Ｉｇ順０．３１Ｌ１４
表
Ｎｏ２４４゜Ｆｅ＋、 ａＡＩｏ、 ２０４Ｎｏ２５・
・％、 ａＦｅ＋、 ５Ａｌｏ、 ｓυ４なお、上記実
施例は、スパッタ法により膜を形成したか、真空蒸着法
、イオンブレーティング法、プラズマＣｖＤ法等の薄膜
形成技術によっても同様の効果か得られる。(Left space below) Table *) 11=+4+, o7re+, a cos uq, (U4N
o l 2=cuto, s++Fe+, u<Cuo,
204b2()・(o+, Je, Ig order 0.31L14
Table No.244゜Fe+, aAIo, 204No.25・
%, aFe+, 5Alo, sυ4 In the above embodiments, the film was formed by sputtering, or similar effects can be obtained by using thin film forming techniques such as vacuum evaporation, ion blating, and plasma CVD.
（発明の効果）
本発明によれば、保磁力の比ｔｉｃ上／ ＩＩ ｃ ｔ
ｔおよび角形比ＳＱ上／５Ｑｔｔか向上し、良好な垂直
磁気異方性を有するコバルトフェライト膜か得られる。(Effect of the invention) According to the invention, the coercive force ratio / II c t
A cobalt ferrite film having improved perpendicular magnetic anisotropy with improved t and squareness ratio SQ/5Qtt can be obtained.
第１図は本発明の一実施例の組成の膜のＢ−Ｈヒステリ
シスループ図、第２図は従来のフェライトのＢ−Ｈヒス
テリシスループ図、第３図は本発明の一実施例の組成の
膜のファラデーループ図、第４図は従来のフェライトの
ファラデールーフ図、第５図、第６図および第７図はＣ
ｕ置換ｔ：とＭｎ置換量に対するそれぞれ保磁力の比１
１ｃ土／ｌ１ｃｎ、角形比ＳＱ工／ Ｓ Ｑ ｎおよび
ファラデーループの角形比ＯＦ、−／ Ｏｒｓの値の変
化を示ず図である。FIG. 1 is a B-H hysteresis loop diagram of a film with a composition according to an embodiment of the present invention, FIG. 2 is a B-H hysteresis loop diagram of a conventional ferrite, and FIG. 3 is a diagram of a film with a composition according to an embodiment of the present invention. The Faraday loop diagram of the membrane, Figure 4 is the Faraday roof diagram of conventional ferrite, and Figures 5, 6, and 7 are C
Ratio of coercive force to u substitution t: and Mn substitution amount, respectively 1
1c soil/l1cn, the squareness ratio SQ/SQn, and the squareness ratio OF, -/Ors of the Faraday loop are not shown.
Claims (1)
され、かつｘ、ｙの値の範囲が０．５≦ｘ≦２．０、０
≦ｙ≦０．４であることを特徴とする垂直磁化膜。Co_xFe_3_-_x_-_yCu_yO_4, and the range of x and y values is 0.5≦x≦2.0, 0
A perpendicularly magnetized film characterized in that ≦y≦0.4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1188256A JP2795688B2 (en) | 1989-07-19 | 1989-07-19 | Perpendicular magnetization film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1188256A JP2795688B2 (en) | 1989-07-19 | 1989-07-19 | Perpendicular magnetization film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0350806A true JPH0350806A (en) | 1991-03-05 |
| JP2795688B2 JP2795688B2 (en) | 1998-09-10 |
Family
ID=16220504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1188256A Expired - Lifetime JP2795688B2 (en) | 1989-07-19 | 1989-07-19 | Perpendicular magnetization film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2795688B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5978186A (en) * | 1996-03-14 | 1999-11-02 | Matsushita Electric Industrial Co., Ltd. | Magnetic head and reproducing apparatus with head having central core with winding thereabout and wire therethrough |
| CN102465265A (en) * | 2010-11-10 | 2012-05-23 | 光洋应用材料科技股份有限公司 | Target material and its application in recording layer material of magnetic recording media |
-
1989
- 1989-07-19 JP JP1188256A patent/JP2795688B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5978186A (en) * | 1996-03-14 | 1999-11-02 | Matsushita Electric Industrial Co., Ltd. | Magnetic head and reproducing apparatus with head having central core with winding thereabout and wire therethrough |
| USRE38594E1 (en) * | 1996-03-14 | 2004-09-21 | Matsushita Electric Industrial Co., Ltd. | Magnetic sensing apparatus having a central core with wire therethrough |
| CN102465265A (en) * | 2010-11-10 | 2012-05-23 | 光洋应用材料科技股份有限公司 | Target material and its application in recording layer material of magnetic recording media |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2795688B2 (en) | 1998-09-10 |
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