JPH03503341A - Manufacturing method and equipment for semiconductor devices - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Semiconductor device, method for manufacturing the same, and equipment for carrying out the method Currently widely used diodes, especially rectifiers (with currents up to about IA and about 1 00V to 2kV), two-terminal semiconductors such as varistors or thermistors One of the plastic packages for the device is a series with coaxial and protruding conductors. It has the shape of a diamond. The inner ends of the semiconductor die and its conductors may be made of, for example, thermoplastic or is hermetically embedded in a plastic, such as a thermosetting plastic, and therefore protected from physical damage and chemical influences such as moisture ingress.

In the manufacture of such semiconductor devices with plastic packages, the die Manufacturing begins with hundreds to dozens of identical die or semiconductor wafers, The conductors for the body device are plug conductors (“head conductors”), i.e. It is designed as a conductor with a thickness that resembles an inverted "head".

Between the two heads, the die is coupled, for example by soldering.

A large number of untinned plug heads are used to achieve high efficiency processing. A die is fed into a magazine, a die is placed on each head, and a die is fed into another magazine. The head of another supplied plug conductor is placed over the die. In the furnace, each die are connected to their two associated plug conductors by soldering. completed half If the conductor device has a high reverse voltage, the soldered die will be etched, coated with a suitable plastic.

The semiconductor device is then moved into a mold that is embedded in plastic. So The semiconductor device conductors on the rear and sides are only tin-plated, which achieves high efficiency processing. The barrel is carried out by tinning. Only (, from, tin plating treatment Conductors bent during the period must be re-aligned axially in a suitable straightening device. Must be. Then they are only subjected to testing, taping and printing.

A typical linearizer processes approximately 20,000 semiconductor devices per hour. Semiconductor equipment Since the price of equipment is still falling, achieving low-cost mass production requires This processing speed is too slow.

Although the manufacturing process described is a well-certified high-volume process, modifications thereof, especially We will further reduce manufacturing costs and create semiconductor devices that can be manufactured at lower costs. Efforts are continuing to provide this.

Therefore, the object of the present invention is to reduce the cost of the hitherto widely used Semiconductors with plastic packages designed differently from plastic packages The objective is to provide a body device. The design of the conductor is also different from the usual design. the The method eliminates the above step of straightening the conductor.

The same applies to tinning following molding or burial.

It is also an object of the present invention to provide a device that can realize high time processing efficiency of a semiconductor device. It is within the intended range.

One of the basic concepts of the invention is that as a can-shaped housing in separate steps Previously, plastic parts were formed by embedding or molding a die. For example, after inserting the die, the cast resin In packaging processing, such as filling cans with plastic compounds such as There is considerable freedom in choosing the starting plastic used as well as the temperature and pressure. Provides the advantage of

Another basic idea of the invention is completely different in terms of the starting point for wire production. sand That is, a conductor is formed from the wire wound on a spool, and this wire is transferred to an unseparated manufacturing stage. Through the main part of the floor, the formation of the plastic package, i.e. the installation of the can, will be done later. Just separate it into individual semiconductor devices.

The present invention provides the following advantages. Low cost plastic can be used for cans Can be done. The press for forming the can-shaped housing may have a simple structure; It is therefore smaller than presses used up to now. No linearization device required as described Therefore, high time processing efficiency is possible. by turning the device over. Since there is no need for a subsequent polarity determining device, the semiconductor device can be used without turning the device upside down. can be taped in the same direction. This can be done from a die or a semiconductor wafer. Can be moved into position between conductors with predetermined polarity and taped This is because it can be sustained until it is done.

Hereinafter, the present invention will be described in further detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a preferred embodiment of a semiconductor device according to the present invention.

FIG. 2 shows the manufacturing process of a preferred embodiment of the invention.

FIG. 3 shows a highly schematic representation of the implementation of the various stations of the device according to the invention. Give an example.

The perspective view in Figure No.]-- shows a cylindrical can-shaped housing, hereinafter simply referred to as a "can". An embodiment of a completed semiconductor device according to the invention including a ring 1 and two conductive wires 3 is shown below. show.

At the front end 1b of the can 1, a filled and hardened cast resin 2 can be seen.

The rear conductor 3 in FIG. 1 passes through the bottom 1a of the can 1 from which it projects.

The eight diagrams in FIG. 1 shows successive stages of manufacturing a semiconductor device. This embodiment has particularly specific electrical properties. Suitable for the above rectifiers. For the portion of wire 30 shown in FIG. 2a, One of the steps required to form the internal conductor ends on which die attach is performed is It will be done.

FIG. 2b shows an offset section formed in two shapes in a preferred embodiment of the invention. 6 is formed on the wire 30 of FIG. 2a by a suitable tool. vinegar. It is also easily possible to form a single offset, in which case the offset The cut extends continuously from the starting point on the left side to the right end of the offset section 6, so the wire The part is formed almost into a tray shape.

Simultaneously with the formation of the offset, the wire 30 is flattened in the working area of the offset tool. Because it is flattened, a flat mounting surface 51,52 for the semiconductor die is obtained. wire The distance d between the axis X and the mounting surface 51,52 is approximately equal to half the die thickness. It is possible.

FIG. 2c shows that the die 4 is mounted near the offset 61 on one of the surfaces 51 (the second Figure b) shows how it is positioned by one of its main faces 41. Figure 2d shows The middle section 63 is shown being cut away to obtain the inner conductor end 80.70. No. Figure 2e shows that the free end 70 of the conductor obtained by cutting off the intermediate portion 63 is attached to the die. 4 and is coupled to the other main surface 42 of the latter.

As shown in Figure 2f, until can 1 occupies the position shown in Figure 2g, That is, the inner conductor end Go, 70 is completely located within the can, and the conductor wires 31 and 32 are It is then slipped over the conductor 32 until it projects axially. Inside dimensions of the can and the dimensions of the conductor ends 60.70 at the offset point 61. [32 (Figure 2c) They must be adjusted with respect to each other so that they lie completely within can 1. Sara The internal width of the can 1 includes the internal conductor ends 60. with the die 4 present therebetween. 70, i.e. the hole in the bottom 1a must be adapted to the external dimensions of the must be adapted to the diameter of the conductor 32 so that the fit is obtained with little force. Therefore, can 1 will not come off during successive processing steps.

Figure 2h shows the cast resin 2 in can 1, which covers the entire hollow space of can 1. and thus hermetically seals die 4.

Instead of a circular cross section, a square or rectangular cross section wire can be used . In that case, of course, the mounting does not require that the surfaces 51 and 52 be formed.

The sequence of operations when manufacturing multiple commercially available semiconductor devices is as follows: be. Conductors 31,32 are formed from wire from spool 39 (FIG. 3).

In a preferred embodiment of the invention, the wire is already tin-plated; It may be pan-plated after being pulled out from the roll 31. The wire is straightened and After being stretched, equally spaced offset portions 6 are formed, which are shown in FIG. It has two preferred shapes shown in the examples. The spacing of the offset portion 6 is removed. The desired length of the conductive wire on the completed semiconductor device is determined by considering the length of the intermediate portion 63 Therefore, it is determined. If the wire 30 has a circular cross section, its surface is flat for the die. Flat mounting is done at the offset part during the offset process so as to form a surface. flattened. The die is off near one of the offset points 61 in one of its major planes. Attached to the set part. The middle portion 63 is cut away.

If only one offset is given, cut off the offset part 6 in the middle. It's fine. In the latter case, the resulting offset free end is the conductor 3 with the die 4 2 axially 180’ and then move the offset free end onto the die As a result, it is moved onto the other main surface 42 of the die 4. The main surface 42 of the die 4 is coupled to the offset free end. In another preferred method, the joint is formed between two Either two separate successive operations or a single simultaneous operation on the main surface 41.42 formed by soldering using a hydrogen flame for each die burning in an excess of hydrogen. the metallized main surface 4 of the die 4 against the tin-plated wire 30] ,, No flux is required for soldering 42. to be soldered The wire may also be heated on a hot plate. Or solder A conductive adhesive may be used instead. Can 1 is a conductor equipped with die 4 It is slipped over the end 60 and 70, filled with the required amount of cast resin 2, and hardened. It will be done. Finally, the mechanically completed semiconductor device is tested and met with a predetermined “good quality.” Items present in the range are taped and subsequently printed while defects are discovered. Those that are damaged are discarded, and those that are not “good” are taped and otherwise printed.

FIG. 3 shows the present invention in manufacturing a semiconductor device according to the present invention by the described method. The structure of the device according to the present invention is shown fairly schematically. The manufacturing process is such that each wire 30 Runs to straightening station 40 and stretching station 50 for straightening and stretching Start with the spool 39 of wire. This straightening and stretching is It is carried out only once during the entire manufacturing process, i.e. at the beginning of the process. So to speak, the next step tion and processing steps are designed and performed to ensure straightness or unaltered wire be done. Straightening and stretching stations 40.50 for each wire 30 3, which are not shown in FIG. Figure 3 of the seven wires 30 at the artificial end of the straight station 40 shown on the left. Concentration refers to all wires entering station 40.

After exiting the stretching station 50, the wire passes through the offset station of FIG. 65, and further in FIG. 3, when the wire 30 has a circular cross section, contact with the wire At the same time, the mounting is done on the surface 51., since their ends have a corresponding flat shape. Two offset punches 68, 67 are shown forming 52 (Fig. 2b).

A Z-shaped offset is formed on the wire 30. The single op described above If an offset is formed, one of the two offset punches 66, 67 or the applied It will be done.

Offset stations 65 have essentially the same number of wires to be processed simultaneously. i.e. including, for example, about 100 offset punches or pairs of offset punches. . Instead of offset punches, suitable roller devices are used for all wires I can do what I want.

After exiting offset station 65, the offset wire passes through die placement station. 75, where the die forms an offset section or a Z-shaped offset. If it is, it will be positioned one position above the offset part. This also applies to all wires. and are carried out at the same time. That is, the die has a Approximately 100 wires are connected to each of the above so that the same semiconductor area is connected with each wire. located on top at the same time.

In the case of the tin-plated wires mentioned above, already provided with a metal layer, e.g. by vapor deposition, It is effective to provide two semiconductor regions of the die on the semiconductor wafer, which is Allows the semiconductor area to be soldered to the tin coating. gold suitable for this purpose Examples of the genera are gold, palladium and silver.

Simultaneous placement of approximately 100 dies onto the wire is handled as follows. usually Semiconductor wafers separated by sawing are diced in the direction of the die being held. The individual dies are then aligned by e.g. a suction pipette on the plate. are moved to the magazine placed above, where their lateral edges are flat with each other. Aligned in rows with exactly the same distance between them. This process is It can be easily automated by visual equipment. Aligned dies are placed in another set. The attachment of the wire is placed on the surface by means of a suction pipette.

Place station 75 is followed by a first cut and feed station 80 the offset part 6 (Fig. 2b) is cut out or the intermediate part 63 (Fig. 2C) ) or cut from offset wire. Therefore, after the cutting operation, the obtained The "left" offset free end 70 causes the wire to perform a corresponding forward movement. and to die 4, while the "right" wire is held in its position.

Station 80 is followed by die bonding station 85, in which The two main faces 41, 42 (Figs. 2C and 2d) of die 4 are tin-plated. Soldered to wire.

This is done, for example, by individual hydrogen flame operation in the above-mentioned excess hydrogen, so that The tin is reduced by excess hydrogen and the residue must be removed in the next purification process. No flux is required. Therefore, the present invention deals with the coupling of conductors. It has the added advantage that no chemical steps are required.

Station 85 is followed by a second cutting station 90, in which example For example, 100 wires can be cut at the same time.

At this point, the completed semiconductor device is separated into preliminary stages, i.e. can 1 or internal conductors. It is slipped over the end 60.70 (Figures 2e to 2h) and cast resin. Separation is done at the manufacturing stage where it is filled.

For example, the cans installed in advance in the magazine 99 in the station 95 for several hundred cases are The can attachment is slipped over the inner conductor end at station 100. Each structure Construction 32.80. ．． 70.31 is inside the can as shown in Figures 2f to 2h. inserted into.

To facilitate insertion into the can 60, the latter is rounded at its opening 1b.

Behind the second cutting station 90, the transmission direction changes by 90°; Each magazine 99 containing semiconductor devices placed in cans is made of plastic compound. is transmitted to the filling station 105, in front of which the direction of transmission is again 90°. opening 1a of can 1 is below the outlet of filling station 105. Placed. The number of outlets is equal to the number of cans, for example about 100. However However, only one outlet 106 is shown in FIG. 3 for simplicity.

The almost completed semiconductor device in the magazine 99 is located in a heating section 111 and a cooling section 1. 12 to a curing station 110. Magazine 99 is cooling part 1 12 and transferred into the filling inlet of test station 115. No. Figure 3 is divided into two halves, so the curing station 110 is in the upper half and shown in both the upper and lower halves. This is used to make the invention easier to understand. This does not mean that there are two hardened stains. do not have.

The test and sort station 115 shown in the embodiment of FIG. Semiconductor devices are simultaneously tested and classified into three groups, and therefore "defective" Container 116 for "good product", set for semiconductor devices with characteristics other than "good product" status. It includes only the antenna 117 and the outlet 118 for devices in the "good" range.

After “defective” and “non-defective” semiconductor devices have been classified, up to this point “Good” devices processed in a row are taped serially, that is, continuously in time. It is moved to station 120 and therefore to printing station 125. Lee At Rusten Yon 130, the device was printed and ready for commercial sale. The tape is finally wound onto a reel 131.

international search report international search report

Claims (10)

[Claims] (1) Two conductors on the same axis, One of the conductors is filled with a plastic compound, preferably cast resin. is preferably in the form of a pre-formed can-shaped cylinder passing through its bottom. plastic housing and a preformed semiconductor die coupled between sides of opposing inner ends of the conductive wire; and an inner end of a conductive wire inserted into the can. (2) The half of claim 1 including at least one conductor offset within the can. conductor device. (3) The inner end is transformed into a mounting surface for the semiconductor die on the side connected to the semiconductor die. 3. The semiconductor device according to claim 1, further comprising a conductive wire having a circular cross section. (4) (a) After straightening and/or stretching, equally spaced offset portions A conductor stem from a spool of wire, preferably tin-plated, provided is formed and (b) one major surface of the semiconductor die is offset near the offset point. combined into parts, (c) The offset part is cut out approximately in the center, and the offset part thus obtained is The free end of the chip is moved over the bonded semiconductor die and bonded to the other major surface of the semiconductor die. (d) A semiconductor die with conductor ends is inserted into the can and the required amount of plastic is inserted into the can. A plastic compound is filled into the can and subsequently hardened, (e) Mechanically finished semiconductor devices are tested and have a predetermined “good quality” status. 3. A plurality of tapes according to claim 2, wherein the plurality of tapes are taped and subsequently printed. A method of manufacturing a semiconductor device in a commercially available state. (5) (a) After straightening and/or stretching, set offset portions at equal intervals. wire, preferably tin-plated, with a mounting surface provided at the same time. A conductor stem is formed from a spool of (b) one major surface of the semiconductor die is coupled to the mounting surface near the offset point; (c) The offset part is cut out approximately in the center, and the offset part thus obtained is the mounting surface of the free end is moved onto the bonded semiconductor die, and the other side of the semiconductor die is a semiconductor die coupled to a major surface of the can and (d) having a conductive wire end; The required amount of plastic compound is filled into the can, followed by curing, (e) Mechanically finished semiconductor devices are tested and have a predetermined “good quality” status. Claims 2 and 3, wherein the material is taped and subsequently printed. A method of manufacturing a plurality of commercially available semiconductor devices. (6) Two consecutive offset parts are formed by double offset, and two consecutive offset parts 4. An intermediate portion of successive offset portions of is removed in step (c). or the method described in 5. (7) Steps (a) to (c) are performed to obtain stems from a plurality of spools, preferably 100. carried out simultaneously on the same number of wires to be processed, step (d) processes the same number of wires in a single operation. 7. A method according to claims 4 and 6 or 5 and 6, which is carried out simultaneously on cans. (8) Each semiconductor is soldered by a hydrogen flame burning in excess hydrogen. Either both major faces of the body die are soldered at the same time, or one major face is soldered in the first cycle. Claim 7: soldered in a step, and the other main surface is soldered in a subsequent step. the method of. (9) The following stations arranged in the direction of transmission: straightening stations and or enlarger station and, if necessary, an offset station that also forms the mounting surface. tion and a die placement station; a first cut and feed station; a die bond station; a second cutting station; a station for feeding cans into the magazine; a can mounting station; a plastic compound filling station; a curing station; a testing and sorting station; taping station and printing station and and a reel station for tapes equipped with semiconductor devices in commercially available condition. Apparatus for carrying out the method according to claim 7 or 8. (10) The transmission direction is behind the second cutting station and the plastic compound 10. Apparatus according to claim 9, characterized by a 90 DEG change in front of the filling station.