JPH0347586B2 - - Google Patents
Info
- Publication number
- JPH0347586B2 JPH0347586B2 JP24700783A JP24700783A JPH0347586B2 JP H0347586 B2 JPH0347586 B2 JP H0347586B2 JP 24700783 A JP24700783 A JP 24700783A JP 24700783 A JP24700783 A JP 24700783A JP H0347586 B2 JPH0347586 B2 JP H0347586B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- conductivity type
- region
- semiconductor substrate
- buried region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 11
- 230000003071 parasitic effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24700783A JPS60140844A (ja) | 1983-12-28 | 1983-12-28 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24700783A JPS60140844A (ja) | 1983-12-28 | 1983-12-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60140844A JPS60140844A (ja) | 1985-07-25 |
| JPH0347586B2 true JPH0347586B2 (enFirst) | 1991-07-19 |
Family
ID=17156994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24700783A Granted JPS60140844A (ja) | 1983-12-28 | 1983-12-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60140844A (enFirst) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1218128B (it) * | 1987-03-05 | 1990-04-12 | Sgs Microelettronica Spa | Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza |
-
1983
- 1983-12-28 JP JP24700783A patent/JPS60140844A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60140844A (ja) | 1985-07-25 |
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