JPH0346737A - Antireflective and antistatic type cathode-ray tube and manufacture thereof - Google Patents
Antireflective and antistatic type cathode-ray tube and manufacture thereofInfo
- Publication number
- JPH0346737A JPH0346737A JP18219189A JP18219189A JPH0346737A JP H0346737 A JPH0346737 A JP H0346737A JP 18219189 A JP18219189 A JP 18219189A JP 18219189 A JP18219189 A JP 18219189A JP H0346737 A JPH0346737 A JP H0346737A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive film
- transparent conductive
- whose
- face plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000003667 anti-reflective effect Effects 0.000 title abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010419 fine particle Substances 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 239000011164 primary particle Substances 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052681 coesite Inorganic materials 0.000 abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 abstract description 9
- 239000003086 colorant Substances 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000003746 surface roughness Effects 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 3
- 210000004276 hyalin Anatomy 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000007921 spray Substances 0.000 description 7
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 125000005372 silanol group Chemical group 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910006724 SnOa Inorganic materials 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
この発明は1表示部の外光反射および帯電を防止するた
め、ガラスバルブのフェースプレート外表面に反射帯電
防止膜を形成した反射帯電防止型陰極線管およびその製
造方法に関する。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) This invention forms a reflective antistatic film on the outer surface of the face plate of a glass bulb in order to prevent reflection of external light and charging of a display area. The present invention relates to a reflective antistatic cathode ray tube and a method for manufacturing the same.
(従来の技術)
陰極線管のフェースプレート内面に形成された蛍光体ス
クリーンに高電圧を印加すると、過渡的にその蛍光体ス
クリーンの形成されているフェースプレート外表面が帯
電する。この帯電を防止するため、従来よりそのフェー
スプレート外表面に透明導電膜からなる帯電防止膜を形
成した陰極線管がある。(Prior Art) When a high voltage is applied to a phosphor screen formed on the inner surface of a face plate of a cathode ray tube, the outer surface of the face plate, on which the phosphor screen is formed, becomes electrically charged transiently. In order to prevent this charging, some cathode ray tubes have conventionally had an antistatic film made of a transparent conductive film formed on the outer surface of the face plate.
その透明導電膜材料としては、古くがらSnO,やsb
をドープしたSnO,(SnOa : Sb)、あるい
はIn、 O。As the transparent conductive film material, SnO, sb
SnO doped with (SnOa:Sb), or In, O.
やSnをドープしたIn2O,(In、O,: Sn)
(以下ITOと記す)などがある、しかし、これら透
明導電膜材料は、屈折率が約2.0と高いため、 これ
ら材料により屈折率が約1.52であるガラス面上に透
明導電膜を形成すると、正反射率がガラス面のみの場合
よりも高くなり、反射特性が劣化する。or Sn-doped In2O, (In, O,: Sn)
(hereinafter referred to as ITO), etc. However, since these transparent conductive film materials have a high refractive index of about 2.0, these materials can be used to form a transparent conductive film on a glass surface with a refractive index of about 1.52. If formed, the specular reflectance will be higher than when only the glass surface is used, and the reflection characteristics will deteriorate.
この反射特性の劣化を解決する手段として、実開昭61
−381号公報、特開昭60−168102号公報、特
開昭60−168899号公報などには、多層反射防止
膜とし、その少なくとも1層をIn2O,やITOなど
の透明導電膜として、反射防止と帯電防止とを面立させ
たものが示されている。これら各公報の開示技術は、い
ずれも真空蒸着やスパッタリングで平滑膜を成膜し、干
渉効果のみによって反射防止を実現するという共通点を
もっている。As a means to solve this deterioration of reflection characteristics,
JP-A-381, JP-A No. 60-168102, JP-A-60-168899, etc. disclose a multilayer antireflection film, at least one of which is a transparent conductive film such as In2O or ITO. The structure is shown in which the characteristics of anti-static and static-static properties are taken into account. The techniques disclosed in these publications all have a common feature in that a smooth film is formed by vacuum evaporation or sputtering, and antireflection is achieved only by the interference effect.
しかし、平滑膜からなる多層反射防止膜は、膜厚制御が
不十分であると、干渉色を生じ、表示部の各部で反射色
が相違したり、表示装置ごとに反射色が異なるなどの不
都合が生ずる。そのため、このような多層反射防止膜を
形成する場合、真空蒸着やスパッタリングで高精度の膜
厚制御が必要となり、これを陰極線管に適用しようとす
ると、設備が大形化し、製造コストの高騰や製造能力の
低下をまねくことになる。However, if the thickness of a multilayer anti-reflection film made of a smooth film is insufficiently controlled, interference colors will occur, resulting in inconveniences such as different reflected colors in different parts of the display or different colors depending on the display device. occurs. Therefore, when forming such a multilayer anti-reflection film, it is necessary to control the film thickness with high precision using vacuum evaporation or sputtering, and if this is applied to cathode ray tubes, the equipment will become larger and manufacturing costs will rise. This will lead to a decline in manufacturing capacity.
上述のように1反射防止特性を干渉効果により得る方法
のほかに、陰極線管のフェースプレート外表面に凹凸を
設けて、拡大効果により反射像をぼかす方法がある。In addition to the above-mentioned method of obtaining the anti-reflection characteristic by interference effect, there is a method of providing unevenness on the outer surface of the face plate of the cathode ray tube to blur the reflected image by a magnification effect.
特開昭61−118932号公報、特開昭61−118
946号公報、特開昭62−37850号公報には、高
屈折率の導電膜を用いることなく、凹凸面に導電性を付
与する方法が示されている。例えば特開昭61−118
932号公報には、第4図に示すように、陰極線管のガ
ラスバルブ■のフェースプレート■外表面に、HNO,
を添加したSi(OR)4(Rはアルキル基)のアルコ
ール溶液をスプレィ法により吹付けたのち、80〜15
0℃の温度で焼成して凹凸膜■を形成する方法が示され
ている。なお、第4図において、(4)はフェースプレ
ート■内面に形成された蛍光体スクリーンである。JP-A-61-118932, JP-A-61-118
No. 946 and Japanese Unexamined Patent Publication No. 62-37850 disclose a method of imparting conductivity to an uneven surface without using a conductive film with a high refractive index. For example, JP-A-61-118
932, as shown in Figure 4, HNO,
After spraying an alcoholic solution of Si(OR)4 (R is an alkyl group) to which 80 to 15
A method is disclosed in which the uneven film (2) is formed by firing at a temperature of 0°C. In FIG. 4, (4) is a phosphor screen formed on the inner surface of the face plate.
しかし、この凹凸膜■の導電性は、第5図に示すように
、凹凸膜■を構成するSun、層中に存在するシラノー
ル基(Si−OH)の水素結合による吸湿性に基づくも
のであるため、導電性能に湿度依存性があり、またシラ
ノール基が湿度環境に対して不安定である。さらに低温
焼成のため、膜強度が弱いなどの問題がある。However, as shown in Figure 5, the conductivity of the uneven film (2) is based on the hygroscopicity due to the hydrogen bonding of the silanol groups (Si-OH) present in the Sun and silanol groups (Si-OH) present in the layer. Therefore, the conductive performance is dependent on humidity, and the silanol group is unstable in a humid environment. Furthermore, since it is fired at a low temperature, there are problems such as weak film strength.
また、実公昭49−24211号公報には、第6図に示
すように、陰極線管のガラスバルブのフェースプレート
■外表面に透明導電膜■を形成し、この透明導電膜■上
にアルカリけい酸塩の保護被膜■を形成したものが示さ
れている。この透明導電膜■および保護被膜0は、スプ
レィ法により透明導電膜■を形成し、 その上にたとえ
ば5in2/に20のモル比が3.4の10%のアルカ
リけい酸塩水溶液をノズル内径0.41のスプレィガン
によりスプレィしてアルカリけい酸塩被膜を形成し、そ
の後、約450℃で30分熱処理して固化したものであ
る。Furthermore, as shown in Fig. 6, Japanese Utility Model Publication No. 49-24211 discloses that a transparent conductive film (■) is formed on the outer surface of the face plate (■) of a glass bulb of a cathode ray tube, and an alkali silicate film (2) is formed on this transparent conductive film (■). A protective coating of salt (■) is shown. The transparent conductive film (■) and the protective film (0) are formed by forming a transparent conductive film (2) by a spray method, and then a 10% aqueous alkali silicate solution having a molar ratio of 3.4 to 5 in2/20 is applied onto the transparent conductive film (2) using a nozzle inner diameter of 0. An alkali silicate film was formed by spraying with a No. 41 spray gun, and then heat-treated at about 450° C. for 30 minutes to solidify it.
この例では、成膜法としてスプレィ法を採用しているの
で、膜表面は平滑でなく、ある程度の凹凸をもった反射
防止膜となり、かつ比較的低コストで反射帯電防止膜が
得られることが予想される。In this example, the spray method is used as the film formation method, so the surface of the film is not smooth but has some degree of unevenness, making it possible to obtain a reflective antistatic film at a relatively low cost. is expected.
しかし、この方法は、アルカリけい酸塩水溶液を使用し
、かつその溶液粘度が比較的高いため、スプレィ法をい
かに工夫しても、解像度などの光学特性が良好な凹凸膜
とすることが容易でない。また一般にアルカリを含むS
iO2の屈折率は、SiO□のみの屈折率(約1.46
)よりも高いので、2層による反射防止効果が低下する
。However, this method uses an aqueous alkali silicate solution and the solution viscosity is relatively high, so no matter how devised the spray method is, it is not easy to form a textured film with good optical properties such as resolution. . Also, S containing alkali generally
The refractive index of iO2 is the refractive index of only SiO□ (approximately 1.46
), the antireflection effect of the two layers decreases.
また、陰極線管のガラスバルブのフェースプレート外表
面にCVD法により透明導電膜を形成し、この透明導電
膜上に5i(OR)、のアルコール溶液を吹付は焼成し
て、SiO2の微細な凹凸を備える反射防止膜を形成し
、反射帯電防止膜としたものがある。In addition, a transparent conductive film is formed on the outer surface of the face plate of the glass bulb of the cathode ray tube by the CVD method, and an alcohol solution of 5i (OR) is sprayed onto this transparent conductive film and then baked to form fine irregularities of SiO2. There is a method in which a reflective antistatic film is formed by forming an antireflective film.
さらに、特開昭63−76247号公報には、第7図に
示すように、陰極線管のガラスバルブのフェースプレー
ト■外表面に、5i(OR)、のアルコール溶液をスプ
レィ法により吹付けたのち、150℃の温度で30分焼
成して微細な凹凸WX■を形成し、つぎに、この凹凸膜
■の形成された陰極線管を常圧CVD装置に入れて、フ
ェースプレート■の外表面を約350℃に加熱し、凹凸
膜■上にSnO,およびIn2O3の透明導電膜■を約
1000人の厚さに形成する方法が示されている。この
透明導電膜■は、陰極線管を順次搬送するベルトコンベ
ア方式の常圧CVD成膜室で形成できる。Furthermore, as shown in Fig. 7, JP-A-63-76247 discloses that after spraying an alcohol solution of 5i (OR) on the outer surface of the face plate of the glass bulb of a cathode ray tube, , to form fine irregularities WX■ at a temperature of 150°C for 30 minutes.Then, the cathode ray tube on which the uneven film ■ has been formed is placed in an atmospheric pressure CVD apparatus, and the outer surface of the face plate ■ is approximately A method is disclosed in which a transparent conductive film (2) of SnO and In2O3 is formed to a thickness of about 1000 nm on the uneven film (2) by heating to 350°C. This transparent conductive film (2) can be formed in an atmospheric pressure CVD film forming chamber using a belt conveyor that sequentially transports cathode ray tubes.
この例では、凹凸膜■をスプレィ法で形成し、透明導電
膜(8)を比較的容易な常圧CVD装置で形成すること
から、導電性および反射性のすぐれた2層構造の反射帯
電防止膜を比較的低コストでつくることができる。しか
し、この方法では、SnO□およびIn、 03を35
0℃という低い温度で化合させるため、SnO2の結合
が不完全であり、透明導電膜■の耐摩耗性が低い。また
陰極線管の製造工程上、排気後の加工が不可能であるた
め、透明導電膜■形成後に、疵、ごみ付着などの外観欠
点が発生しやすく、しかもその回収再生が不可能になる
という問題がある。In this example, the uneven film (1) is formed by a spray method, and the transparent conductive film (8) is formed by a relatively easy normal pressure CVD device, so it has a two-layer anti-reflective structure with excellent conductivity and reflectivity. Membranes can be produced at relatively low cost. However, in this method, SnO□ and In, 03 are
Since the bonding is carried out at a low temperature of 0° C., the bonding of SnO2 is incomplete and the abrasion resistance of the transparent conductive film (1) is low. In addition, due to the manufacturing process of cathode ray tubes, processing after evacuation is not possible, so after the transparent conductive film is formed, appearance defects such as scratches and dust adhesion are likely to occur, and furthermore, it is impossible to recover and recycle them. There is.
(発明が解決しようとする課題)
上記のように、従来より陰極線管の反射帯電防止膜の反
射防止特性を、干渉効果のみにより得ようとしたもの、
および凹凸面とすることにより反射を抑制するようにし
たものがある。しかし、いずれの反射帯電防止膜も、反
射率が低く、反射干渉色を生ぜず、解像度の劣化が少な
く、かつ耐湿性のよい反射帯電防止膜とはなっておらず
、かつ低コストで容易に形成することが困難である。(Problems to be Solved by the Invention) As mentioned above, conventional attempts have been made to obtain the antireflection properties of the reflective antistatic coating of cathode ray tubes only by interference effects.
There are also some that suppress reflection by having an uneven surface. However, none of these reflective antistatic films has a low reflectance, does not produce reflective interference colors, has little resolution degradation, and has good moisture resistance. Difficult to form.
この発明は、上記問題点に鑑みてなされたものであり、
従来の陰極線管の反射帯電防止膜の問題点を解決して、
反射防止特性と帯電防止特性の双方を実用上満足する微
細凹凸膜からなる反射帯電防止膜を形成することを目的
とする。This invention was made in view of the above problems, and
By solving the problems of conventional cathode ray tube reflective antistatic coatings,
The object of the present invention is to form a reflective antistatic film made of a finely textured film that practically satisfies both antireflection and antistatic properties.
(141題を解決するための手段)
反射帯電防止型陰極線管において、そのガラスバルブの
フェースプレート外表面上に、平均粒径2000Å以下
のSnO,微粒子を主成分として重量組成比が5nOs
/ SiO2≧0.8である膜厚100〜3000人の
透明導電膜を形成し、 この透明導電膜上にSiOを主
成分とする微細凹凸膜を形成して反射帯電防止膜とした
。(Means for Solving Problem 141) In a reflective antistatic cathode ray tube, on the outer surface of the face plate of the glass bulb, SnO with an average particle size of 2000 Å or less, with a weight composition ratio of 5 nOs mainly composed of fine particles.
A transparent conductive film having a film thickness of 100 to 3000 layers with SiO2≧0.8 was formed, and a fine unevenness film containing SiO as a main component was formed on this transparent conductive film to obtain a reflective antistatic film.
また、その反射帯電防止型陰極線管の製造方法として、
ガラスバルブのフェースプレート外表面に平均一次粒径
50〜500人のSnO,微粒子を分散させたSi(O
R)4のアルコール溶液を塗布して透明導電膜を形成し
、つぎに、この透明導電膜の形成されたフェースプレー
トを50〜90℃に余熱し、この余熱されたフェースプ
レート外表面の透明導電膜上に5i(OR)、のアルコ
ール溶液をスプレィして、5in2を主成分とする微細
凹凸膜を形成し、この微細凹凸膜の形成されたフェース
プレートを150〜350℃で焼成して反射帯電防止膜
を形成した。In addition, as a method for manufacturing the reflective antistatic cathode ray tube,
On the outer surface of the face plate of the glass bulb, Si(O
R) Apply the alcohol solution in step 4 to form a transparent conductive film, then preheat the face plate on which the transparent conductive film is formed to 50 to 90°C, and remove the transparent conductive film on the outer surface of the preheated face plate. An alcohol solution of 5i (OR) is sprayed on the film to form a finely textured film containing 5in2 as the main component, and the face plate on which this finely textured film is formed is baked at 150 to 350°C to achieve reflective charging. A preventive film was formed.
(作用)
上記のように、平均粒径2000Å以下のSnO,微粒
子を主成分とし、重量組成比を5n02/SiO2≧0
.8の透明導電膜を形成すると、耐湿性のすぐれた低抵
抗の透明導電膜が得られ、150〜350℃の陰極線管
加工可能な温度で焼成しても、表面抵抗が10″Ω/d
以下と低く、すぐれた導電性を示し、かつ実用上満足で
きる膜強度とすることができる。しかも1反射帯電防止
膜をガラスの屈折率nα1.52とほぼ同一屈折率を有
する導電膜と屈折率 n=1.46のSiO□膜とから
構成するので、透明導電膜の膜厚を100〜3000人
と厚くしても、干渉効果による反射率や反射色の劣化を
まねかず、反射防止特性がSiO凹凸膜単独の場合と同
様の拡散反射となり、透明導電凹凸膜の単層構造にくら
べて、ヘイズ(Haze)の不透明度による解像度の劣
化かほど。(Function) As mentioned above, the main component is SnO fine particles with an average particle size of 2000 Å or less, and the weight composition ratio is 5n02/SiO2≧0.
.. When the transparent conductive film of No. 8 is formed, a low resistance transparent conductive film with excellent moisture resistance is obtained, and even when baked at a temperature of 150 to 350°C, which is suitable for cathode ray tube processing, the surface resistance is 10"Ω/d.
It can be made to have a film strength as low as below, exhibit excellent conductivity, and have a practically satisfactory film strength. Moreover, since the single reflective antistatic film is composed of a conductive film having a refractive index that is almost the same as the refractive index nα1.52 of glass and a SiO□ film with a refractive index n=1.46, the film thickness of the transparent conductive film is 100~1.52. Even when the thickness is 3,000 people, there is no deterioration of reflectance or reflected color due to interference effects, and the antireflection properties are similar to those of the SiO uneven film alone, resulting in diffuse reflection, and compared to a single layer structure of a transparent conductive uneven film. , the resolution deteriorates due to the opacity of Haze.
んとなく、すぐれた光学特性を示す反射帯電防止膜とす
ることができる。It is possible to obtain a reflective antistatic film that exhibits excellent optical properties.
(実施例)
以下1図面を参照してこの発明を実施例に基づいて説明
する。(Example) The present invention will be described below based on an example with reference to one drawing.
第1図にこの発明の一実施例である反射帯電防止膜の形
成されたカラー受像管を示す。このカラー受像管は、一
体に接合されたガラスからなるパネル(10)およびフ
ァンネル(11)からなるバルブ(12)を備え、その
パネル(10)内面に形成された3色蛍光体層からなる
蛍光体スクリーン(イ)に対向して、パネル(10)外
表面に反射帯電防止膜(13)が形成されている。なお
、第1図において、(14)は蛍光体スクリーンa)に
対向してパネル(10)内側に装着されたシャドウマス
ク、(15)はファンネル(11)のネック(16)内
に配設された電子銃、(17)はパネル(10)外側壁
を緊締する補強バンドであり、反射帯電防止膜(13)
は、たとえばこの補強バンド(17)に金属片(図示せ
ず)などの任意手段により接続され、補強バンド(17
)を介して接地される。FIG. 1 shows a color picture tube on which a reflective antistatic film is formed, which is an embodiment of the present invention. This color picture tube includes a bulb (12) consisting of a panel (10) made of glass and a funnel (11) that are bonded together, and a fluorescent light made of a three-color phosphor layer formed on the inner surface of the panel (10). A reflective antistatic film (13) is formed on the outer surface of the panel (10) facing the body screen (A). In Fig. 1, (14) is a shadow mask mounted inside the panel (10) facing the phosphor screen a), and (15) is a shadow mask disposed inside the neck (16) of the funnel (11). The electron gun (17) is a reinforcing band that tightens the outer wall of the panel (10), and the reflective antistatic film (13)
is connected to the reinforcing band (17) by any means such as a metal piece (not shown), and the reinforcing band (17
).
上記反射帯電防止膜(13)は、第2図に拡大して示す
ように、パネル(10)外表面上に直接形成された平均
粒径2000Å以下のSnO,微粒子を主成分として重
量組成比がSnO,/ SiO□≧0.8である膜厚1
00〜3000人の透明導電膜(20)と、この透明導
電膜(20)上に形成されたSiO□を主成分とする微
細凹凸膜(21)とからなる。As shown in an enlarged view in FIG. 2, the reflective antistatic film (13) is composed mainly of SnO fine particles with an average particle size of 2000 Å or less formed directly on the outer surface of the panel (10), and has a weight composition ratio. Film thickness 1 where SnO,/SiO□□≧0.8
It consists of a transparent conductive film (20) of 00 to 3000 people and a finely uneven film (21) whose main component is SiO□ formed on this transparent conductive film (20).
上記反射帯電防止膜(13)の形成は、通常の方法によ
りカラー受像管を製造したのちに形成される。The reflective antistatic film (13) is formed after the color picture tube is manufactured by a conventional method.
すなわち、パネル内面に蛍光体スクリーンを形成し、こ
の蛍光体スクリーンの形成されたパネルとファンネルと
を一体に接合し、電子銃を封止し排気したのちに防爆処
理を施す。そして、この防爆処理の施されたカラー受像
について、まずパネル外表面を洗浄し乾燥する。つぎに
平均粒子径(平均−次粒子径)200人の微粒子SnO
□を安定に分散させて重量組成比がSnO,/5jn2
= 0.95としたSi(OR)4アルコール溶液を上
記洗浄乾燥したパネル外表面に、たとえばスピン法によ
り平滑に塗布し乾燥して、透明導電膜を形成する。この
透明導電膜の塗布方法としては、スピン法のほかに、ロ
ール法、デイツプ法、スプレィ法などがあり、いずれの
方法でも塗布することができる。That is, a phosphor screen is formed on the inner surface of the panel, the panel on which the phosphor screen is formed and the funnel are joined together, and after the electron gun is sealed and evacuated, explosion-proof treatment is performed. First, the outer surface of the panel of the color image receiving device that has been subjected to explosion-proof treatment is cleaned and dried. Next, the average particle diameter (average-order particle diameter) of 200 people's fine particle SnO
By stably dispersing □, the weight composition ratio is SnO, /5jn2
A Si(OR)4 alcohol solution having a concentration of 0.95 is applied smoothly onto the cleaned and dried outer surface of the panel by, for example, a spin method and dried to form a transparent conductive film. Coating methods for this transparent conductive film include, in addition to the spin method, a roll method, a dip method, and a spray method, and any of these methods can be used.
つぎにこの透明導電膜を約60℃に余熱し、この余熱さ
れた透明導電膜上に、 ノズル径0.4m+の2流体噴
霧スプレィガンにより5l(OR)4 アルコール溶液
をスプレィする。そして、その結果1反射帯電防止膜の
下層として、重量組成比がSnO2/SjO□=0.9
5でSnO2の平均二次粒子径が約1ooo人であり、
膜厚d1が約2700人の透明導電膜(20)を形成す
ることができ、この透明導電膜(20)の上層として、
平均膜厚d2が約1000人、凹凸のピッチPが約15
〜20p、表面粗さRzが約0.5−であり、表示面の
光沢度Gs (JIS Z8741の60度鏡面光沢度
法による)が約55%の微細凹凸膜(21)を形成する
ことができた。Next, this transparent conductive film is preheated to about 60° C., and 5 l (OR) 4 alcohol solution is sprayed onto the preheated transparent conductive film using a two-fluid spray gun with a nozzle diameter of 0.4 m+. As a result, the weight composition ratio of the lower layer of 1 reflective antistatic film was SnO2/SjO□=0.9.
5, the average secondary particle diameter of SnO2 is about 1 ooo,
A transparent conductive film (20) having a film thickness d1 of approximately 2700 mm can be formed, and as an upper layer of this transparent conductive film (20),
The average film thickness d2 is about 1000, and the pitch P of unevenness is about 15.
~20p, a surface roughness Rz of about 0.5-, and a display surface gloss Gs (according to the 60 degree specular gloss method of JIS Z8741) of about 55%. did it.
15インチカラー受像管のパネル外表面にSnO,/S
iO□z1.0としてこの例の反射帯電防止膜を形成し
て、その特性を測定した結果を表1に示す。この表1の
比較例は、15インチカラー受像管に同一方法により透
明導電膜単層を形成したものである。SnO, /S on the outer surface of the panel of a 15-inch color picture tube
The reflective antistatic film of this example was formed with iO□z1.0, and its properties were measured. Table 1 shows the results. In the comparative example shown in Table 1, a single layer of transparent conductive film was formed on a 15-inch color picture tube by the same method.
表1
Ω/a! Rlum x y八
本実施例(2層)
比較例(単層)
0
0
1.6%
3.2%
0.33 0.32
0.33 0.32 約2700
この表1かられかるように、透明導電膜層の場合は、S
nO□と5in2の混合層の屈折率がn>1.47〜1
.50であるので、視感正反射率はほとんど劣化せず、
また正反射色も、Xαyα0.33とほぼ白色である。Table 1 Ω/a! Rlum x y Eight pieces Example (two layers) Comparative example (single layer) 0 0 1.6% 3.2% 0.33 0.32 0.33 0.32 Approx. 2700 As can be seen from Table 1, In the case of transparent conductive film layer, S
The refractive index of the mixed layer of nO□ and 5in2 is n>1.47~1
.. 50, the luminous specular reflectance hardly deteriorates,
Further, the specular reflection color is approximately white with Xαyα0.33.
これに対し、本実施例の2層構造とすると、微細凹凸膜
の拡散効果により視感正反射率は、R1um1l、4%
と十分低くなり、正反射色も、 Xユyα0.33とほ
ぼ白色になる。さらに、導電性については、抵抗値に湿
度依存性がほとんどなく、表面抵抗値r=10’Ω/d
と低い抵抗値を示し、パネル外表面全面にわたり一様と
することができた。On the other hand, with the two-layer structure of this example, the luminous specular reflectance is R1um1l, 4% due to the diffusion effect of the finely textured film.
The specular reflection color becomes almost white with Xyα0.33. Furthermore, regarding conductivity, the resistance value has almost no humidity dependence, and the surface resistance value r = 10'Ω/d
It showed a low resistance value and was able to make it uniform over the entire outer surface of the panel.
その結果、この反射帯電防止膜を2層構造としたカラー
受像管(15インチカラー受像管)の蛍光体スクリーン
に25kVの高電圧を印加して、パネル外表面の電位変
化を測定した結果、第3図に破線(23)で示すように
、反射帯電防止膜を形成しない未処理カラー受像管では
、高電圧印加後20分経過しても、はとんど表面電位が
減衰しないが、反射1f電防止膜の形成されたこの例の
カラー受像管では、実線(24)で示すように、高電圧
印加後約1秒で零電位になった。As a result, we applied a high voltage of 25 kV to the phosphor screen of a color picture tube (15-inch color picture tube) that had a two-layer structure with this reflective antistatic film, and measured the potential change on the outer surface of the panel. As shown by the broken line (23) in Figure 3, in an untreated color picture tube without a reflective antistatic film, the surface potential does not attenuate for 20 minutes after high voltage is applied, but the reflective 1f In the color picture tube of this example on which the antistatic film was formed, the potential became zero in about 1 second after application of the high voltage, as shown by the solid line (24).
また、耐摩耗性について、消しゴム(Lion50/3
0)に1kgの荷重を加えてパネル外表面の反射帯電防
止膜を200回擦ったが、剥雛しなかった。In addition, regarding wear resistance, eraser (Lion50/3
0), the reflective antistatic film on the outer surface of the panel was rubbed 200 times with a load of 1 kg applied, but the chicks did not peel off.
なお、上記実施例では、反射帯電防止膜およびその製造
方法の一例について述べたが、この反射帯電防止膜の下
層を構成する透明導電膜は、重量組成比がSnO□/
5i02≧0.8として、平均粒子径(平均−大粒子径
)50〜500人のSnO,を分散した塗布液を塗布す
ることにより、重量組成比が5nOz / SiO□≧
0.8、平均二次粒子径2000Å以下のSnO,を含
む膜厚100〜3000人の所要特性を備える透明導電
膜とすることができる。In the above example, an example of a reflective antistatic film and a method for manufacturing the same was described, but the transparent conductive film constituting the lower layer of this reflective antistatic film has a weight composition ratio of SnO□/
With 5i02≧0.8, by applying a coating liquid in which an average particle size (average - large particle size) of 50 to 500 SnO is dispersed, the weight composition ratio is 5nOz/SiO□□≧
0.8 and an average secondary particle diameter of 2000 Å or less, a transparent conductive film having a thickness of 100 to 3000 Å and having the required properties can be obtained.
すなわち、SnO2/SiO2の重量組成比が0.8よ
りも低くなると、 SnOよ微粒子相互が接続されず、
SnO。In other words, when the weight composition ratio of SnO2/SiO2 is lower than 0.8, the SnO particles are not connected to each other,
SnO.
による導電機構が減少し、 SnO2膜中に存在するシ
ラノール基による導電機構が増大する。この導電機構は
、湿度環境に対して不安定である。The conductive mechanism due to the SnO2 film decreases, and the conductive mechanism due to the silanol groups present in the SnO2 film increases. This conductive mechanism is unstable in a humid environment.
なお、この発明は、カラー受像管以外の陰極線管にも適
用できることはいうまでもない。It goes without saying that the present invention can also be applied to cathode ray tubes other than color picture tubes.
陰極線管のガラスバルブのフェースプレート外表面上に
、平均粒径2000Å以下のSnO,微粒子を主成分と
して重量組成比がSnO2/SiO2≧0.8である膜
厚100〜3000人の透明導電膜を形成し、 この透
明導電膜上にSiO2を主成分とする微細凹凸膜を形成
して反射帯電防止膜とすると、低い表面抵抗により導電
性にすぐれ、しかもその導電性に湿度依存性がほとんど
なく、また透明導電膜の膜厚を厚くしても反射率や反射
色の劣化をまねかず、さらに微細凹凸膜の拡散効果によ
り解像度の劣化がなく、しかも耐摩耗性に強い反射帯電
防止膜とすることができる。On the outer surface of the face plate of the glass bulb of the cathode ray tube, a transparent conductive film with a thickness of 100 to 3000 people, which is mainly composed of SnO fine particles with an average particle size of 2000 Å or less and whose weight composition ratio is SnO2/SiO2 ≧0.8, is applied. When a reflective antistatic film is formed by forming a finely textured film mainly composed of SiO2 on this transparent conductive film, it has excellent conductivity due to low surface resistance, and the conductivity has almost no humidity dependence. Furthermore, even if the thickness of the transparent conductive film is increased, the reflectance and reflected color do not deteriorate, and the resolution does not deteriorate due to the diffusion effect of the finely textured film, and the reflective antistatic film has strong abrasion resistance. I can do it.
第1図乃至第3図はこの発明の詳細な説明図で、第1図
はその一実施例である反射帯電防止型カラー受像管を一
部切欠いて示す図、第2図はその反射帯電防止膜の構成
を示す図、第3図はその帯電防止特性を示す図、第4図
は)INO,を添加したSi(OR)、のアルコール溶
液を吹付けて凹凸膜が形成された従来の陰極線管の図、
第5図はその凹凸膜の導電機構を説明するための図、第
6図は透明導電膜およびアルカリけい酸塩の保護膜が形
成された従来の陰極線管の図、第7図は常圧CVD法に
より透明導電膜およびSiOよからなる凹凸膜の形成さ
れた従来の陰極線管の要部を示す図である。
4・・・蛍光体スクリーン
10・・・パネル 12・・・バルブ13・・
・反射帯電防止膜 20・・・透明導電膜21・・・微
細凹凸膜1 to 3 are detailed explanatory diagrams of the present invention. FIG. 1 is a partially cutaway view of a reflective antistatic color picture tube as an embodiment of the invention, and FIG. Figure 3 is a diagram showing the structure of the film, Figure 3 is a diagram showing its antistatic properties, and Figure 4 is a conventional cathode ray in which an uneven film is formed by spraying an alcohol solution of Si (OR) with added INO. tube diagram,
Fig. 5 is a diagram for explaining the conduction mechanism of the uneven film, Fig. 6 is a diagram of a conventional cathode ray tube in which a transparent conductive film and an alkali silicate protective film are formed, and Fig. 7 is a diagram of a conventional cathode ray tube formed using normal pressure CVD. 1 is a diagram showing a main part of a conventional cathode ray tube in which a transparent conductive film and a concave-convex film made of SiO are formed by a method. 4... Phosphor screen 10... Panel 12... Bulb 13...
・Reflective antistatic film 20...Transparent conductive film 21...Fine unevenness film
Claims (2)
され、平均粒径2000Å以下のSnO_2微粒子を主
成分として重量組成比がSnO_2/SiO_2≧0.
8である膜厚100〜3000Åの透明導電膜と、この
透明導電膜上に形成されたSiO_2を主成分とする微
細凹凸膜とを具備することを特徴とする反射帯電防止型
陰極線管。(1) Formed on the outer surface of the face plate of a glass bulb, the main component is SnO_2 fine particles with an average particle size of 2000 Å or less, and the weight composition ratio is SnO_2/SiO_2≧0.
1. A reflective antistatic cathode ray tube comprising: a transparent conductive film having a thickness of 100 to 3000 Å; and a finely textured film mainly composed of SiO_2 formed on the transparent conductive film.
次粒径50〜500ÅのSnO_2微粒子を分散させた
Si(OR)_4(ただしRはアルキル基)のアルコー
ル溶液を塗布して透明導電膜を形成する工程と、上記透
明導電膜の形成されたフェースプレートを50〜90℃
に余熱する工程と、上記余熱されたフェースプレート外
表面の透明導電膜上にSi(OR)_4のアルコール溶
液をスプレイしてSiO_2を主成分とする微細凹凸膜
を形成する工程と、上記微細凹凸膜の形成されたフェー
スプレートを150〜350℃で焼成する工程とを備え
ることを特徴とする反射帯電防止型陰極線管の製造方法
。(2) Apply an alcohol solution of Si(OR)_4 (where R is an alkyl group) in which SnO_2 fine particles with an average primary particle size of 50 to 500 Å are dispersed to the outer surface of the face plate of the glass bulb to form a transparent conductive film. The process and the face plate on which the transparent conductive film is formed are heated to 50 to 90°C.
a step of preheating the transparent conductive film on the preheated outer surface of the face plate, a step of spraying an alcohol solution of Si(OR)_4 on the preheated transparent conductive film to form a finely textured film mainly composed of SiO_2; 1. A method for manufacturing a reflective antistatic cathode ray tube, comprising the step of firing the face plate on which the film is formed at 150 to 350°C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18219189A JPH0346737A (en) | 1989-07-14 | 1989-07-14 | Antireflective and antistatic type cathode-ray tube and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18219189A JPH0346737A (en) | 1989-07-14 | 1989-07-14 | Antireflective and antistatic type cathode-ray tube and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0346737A true JPH0346737A (en) | 1991-02-28 |
Family
ID=16113932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18219189A Pending JPH0346737A (en) | 1989-07-14 | 1989-07-14 | Antireflective and antistatic type cathode-ray tube and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0346737A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5707685A (en) * | 1991-03-19 | 1998-01-13 | Hitachi, Ltd. | Process for forming ultrafine particle film, transparent plate and image display plate |
-
1989
- 1989-07-14 JP JP18219189A patent/JPH0346737A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5707685A (en) * | 1991-03-19 | 1998-01-13 | Hitachi, Ltd. | Process for forming ultrafine particle film, transparent plate and image display plate |
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