JPH0344472Y2 - - Google Patents

Info

Publication number
JPH0344472Y2
JPH0344472Y2 JP1860787U JP1860787U JPH0344472Y2 JP H0344472 Y2 JPH0344472 Y2 JP H0344472Y2 JP 1860787 U JP1860787 U JP 1860787U JP 1860787 U JP1860787 U JP 1860787U JP H0344472 Y2 JPH0344472 Y2 JP H0344472Y2
Authority
JP
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1860787U
Other versions
JPS63127893U (en )
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

JP1860787U 1987-02-10 1987-02-10 Granted JPH0344472Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1860787U JPH0344472Y2 (en) 1987-02-10 1987-02-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1860787U JPH0344472Y2 (en) 1987-02-10 1987-02-10

Publications (2)

Publication Number Publication Date
JPS63127893U true JPS63127893U (en) 1988-08-22
JPH0344472Y2 true JPH0344472Y2 (en) 1991-09-18

Family

ID=30812436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1860787U Granted JPH0344472Y2 (en) 1987-02-10 1987-02-10

Country Status (1)

Country Link
JP (1) JPH0344472Y2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9412564B2 (en) 2013-07-22 2016-08-09 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010030702A (en) * 2008-07-25 2010-02-12 Murata Machinery Ltd Lifter

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9412564B2 (en) 2013-07-22 2016-08-09 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus

Also Published As

Publication number Publication date Type
JPS63127893U (en) 1988-08-22 application

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