JPH0343969A - Circuit device - Google Patents
Circuit deviceInfo
- Publication number
- JPH0343969A JPH0343969A JP17680489A JP17680489A JPH0343969A JP H0343969 A JPH0343969 A JP H0343969A JP 17680489 A JP17680489 A JP 17680489A JP 17680489 A JP17680489 A JP 17680489A JP H0343969 A JPH0343969 A JP H0343969A
- Authority
- JP
- Japan
- Prior art keywords
- conductive paste
- metal terminal
- silane coupling
- coupling agent
- diallyl phthalate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 20
- 239000004641 Diallyl-phthalate Substances 0.000 claims abstract description 14
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 19
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 9
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000243 solution Substances 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 3
- 238000010790 dilution Methods 0.000 abstract description 2
- 239000012895 dilution Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XSIFPSYPOVKYCO-UHFFFAOYSA-N butyl benzoate Chemical compound CCCCOC(=O)C1=CC=CC=C1 XSIFPSYPOVKYCO-UHFFFAOYSA-N 0.000 description 2
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical group C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000711 U alloy Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
- Adjustable Resistors (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、表面に抵抗体を設けた基板を備えた可変抵抗
器等の回路素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a circuit element such as a variable resistor having a substrate provided with a resistor on its surface.
発明の背累と課題
本出願人吐、既に、特願昭６２−２７７９５３ ％、特
願昭６２−２７７９５４号として、樹脂製基板の表面に
設けた抵抗体と、この樹脂製基板にモールドされた金属
端子とが、導電性ペーストを介して電気的に接続されて
いる抵抗体基板を提案した。Background and Problems of the Invention The present applicant has already disclosed, in Japanese Patent Applications No. 62-277953 and No. 62-277954, a resistor provided on the surface of a resin substrate and a resistor molded on the resin substrate. We have proposed a resistor substrate in which metal terminals are electrically connected via conductive paste.
ところで、このような構造を６つ抵抗体基板において、
抵抗体と金属端子との間に介在して電気的接続を担う導
電性ペーストは、Ａｇ等の金属粉末を樹脂中に分散した
もので、樹脂としては、半田耐熱性、電気特性、寸法安
定性、耐薬品性等に優れるジアリルツクレート系樹脂を
採用することを予定していた。By the way, in a resistor board with six such structures,
The conductive paste that is interposed between the resistor and the metal terminal and responsible for the electrical connection is made by dispersing metal powder such as Ag in a resin, and the resin has excellent soldering heat resistance, electrical properties, and dimensional stability. The company had planned to use diallyl slate resin, which has excellent chemical resistance.
しかしながら、ジアリルフタレ−１・系樹脂を結合剤と
する導電性ペース＋４１金属との密着性に劣るという欠
点があり、特に、耐湿性において著しく信頼性が低下す
るという問題点を有していた。However, conductive paste +41 containing diallylphthale-1 resin as a binder has the disadvantage of poor adhesion to metals, and particularly has the problem of significantly lower reliability in moisture resistance.
発明の構球
そこで、本発明に係る回路素子は、
濃度０．３〜２．０ｗｔ％のアミノ系シランカツブリン
グ剤で処理した金属端子が、ジアリルフタレ−１・系導
電性ペーストと密着していること、を特徴とする。Accordingly, in the circuit element according to the present invention, a metal terminal treated with an amino-based silane clumping agent with a concentration of 0.3 to 2.0 wt% is in close contact with a diallylphthale-1-based conductive paste. It is characterized by.
本発明に用いられるアミノ系シランカップリング剤とし
ては、例えば、Ｎβ（アミノエチル）７アミノブロビル
トリメトキシシラン、Ｎ−β（アミノエチル）７−アミ
ノプロピルメチルジメトキシシラン、７−アミノプロピ
ル１〜リエトキシシラン、Ｎ−フェニル−７−アミツプ
ロピルトリメトキシシランなどがある。Examples of the amino-based silane coupling agent used in the present invention include Nβ (aminoethyl) 7-aminobrobyl trimethoxysilane, N-β (aminoethyl) 7-aminopropylmethyldimethoxysilane, 7-aminopropyl 1- Examples include ethoxysilane and N-phenyl-7-amitsupropyltrimethoxysilane.
アミン系シランカップリング剤は、例えは、メタノール
、エタノール、イソプロピルアルコール。Examples of amine-based silane coupling agents include methanol, ethanol, and isopropyl alcohol.
トルエン、アセトンなとの希釈溶媒にて希釈され、０．
３〜２．０ｗｔ％の溶液状態で用いられる。It is diluted with a diluting solvent such as toluene or acetone to give a 0.
It is used in a solution state of 3 to 2.0 wt%.
また、ジアリルフタレ−１・糸導電性ペースト仁よ、導
電成分としてのＡｇ、 Ａｕ、 Ｐｄ、 Ｐｔ、 Ｎｉ
等の金属粉末以外に、充填剤としてフィラーが含有させ
られる。In addition, diallylphthale-1/thread conductive paste contains Ag, Au, Pd, Pt, Ni as conductive components.
In addition to metal powders such as, fillers may be contained as fillers.
無機質フィラーとしては、シリカ、アルミナ、ガラス、
タルク、粘土、水酸化アルミニラＡ ＋アスベスト、二
酸化チタン、亜鉛華などが用いられる。Inorganic fillers include silica, alumina, glass,
Talc, clay, aluminum hydroxide A + asbestos, titanium dioxide, zinc white, etc. are used.
な」３、無機質フィラーのばか充填剤としてフッ素系樹
脂なとの有機質フィラーを含有させでも良い。3. An organic filler such as a fluororesin may be included as an inorganic filler.
これらの導電成分とフィラーとは結合剤樹脂であるジア
リルフタレート系樹脂にて結合させられる。These conductive components and the filler are bonded using diallyl phthalate resin, which is a binder resin.
さらに、前記ジアリルフタレート系導電性ペーストは、
無水フクル酸、あるいは、無水マレイン酸をジアリルフ
タレート系樹脂固形分に対して１〜１５ｗｔ％添加した
ものを使用することが密着性向」二の７こめ１こ女ｆ−
ＩＰシい。Furthermore, the diallyl phthalate-based conductive paste is
It is recommended to use Fucric anhydride or maleic anhydride in an amount of 1 to 15 wt% based on the solid content of the diallylphthalate resin to improve adhesion.
IP.
さらに、金属端子の材質としては、費消、（ｕ合金、リ
ン青銅、洋白等が用いられる。Further, as the material of the metal terminal, a metal (U alloy, phosphor bronze, nickel silver, etc.) is used.
実愚真
第１図は本発明に係る回路素子の一実施例である可変抵
抗器に使用される抵抗体基板の断面図である。樹脂製基
板の表面に設けた抵抗体と、この樹脂製基板にモールド
された金属端子とが、ジアノルックレート系導電性ペー
ストを介して電気的に接続されている。FIG. 1 is a sectional view of a resistor substrate used in a variable resistor, which is an embodiment of the circuit element according to the present invention. A resistor provided on the surface of a resin substrate and a metal terminal molded on the resin substrate are electrically connected via a dianoluclate-based conductive paste.
同図において、１は抵抗体基板であり、金属端子３，５
が埋設されていると共に、その表面に抵抗体６が同−平
面」二に赤用する様にモールドされた構造となっている
。この基板１は、例え番よシアツルフタレート樹脂にて
成形される。前記基板１の表面に設Ｃ′Ｊた抵抗体６番
よｔｉｔぼ円弧状をなし、金属端子３の一端はジアリル
フクレ−１へ系導電性ペースト７を介して抵抗体６の端
部と電気的に接続された状態で基板１に埋設されている
。In the figure, 1 is a resistor board, and metal terminals 3, 5
is buried therein, and a resistor 6 is molded on the surface thereof so as to be flush with the same plane. This substrate 1 is made of, for example, a sheathul phthalate resin. The resistor No. 6 installed on the surface of the substrate 1 has a nearly arc shape, and one end of the metal terminal 3 is electrically connected to the end of the resistor 6 through the electrically conductive paste 7 to the diaryl Fukure-1. It is embedded in the substrate 1 while being connected to.
本発明の特徴は、このような構造の基板１において、金
属端子３をジアリルフクレ−１・糸導′ｌＥ性ペースト
７と密着さける前下程として、金属端子３をアミン系シ
ランカップリング剤で処理することである。The feature of the present invention is that in the substrate 1 having such a structure, the metal terminals 3 are treated with an amine-based silane coupling agent before and after the metal terminals 3 are brought into close contact with the diallyl Fucre-1/fiber conductive paste 7. It is to be.
本実施例のアミノ系シランカップリング剤は、Ｎβ（ア
ミノエチル）７−アミツプロビルトリメトキシシランを
エタノールにて０．３ｗｔ％に希釈したものを用いた。The amino-based silane coupling agent used in this example was Nβ (aminoethyl) 7-amituprobyl trimethoxysilane diluted with ethanol to 0.3 wt %.
金属端子はこの溶液に１分間浸漬してシランカップリン
グ剤をコートした後、８０°Ｃの温度でｌＯ分間強制乾
燥を施した。The metal terminal was immersed in this solution for 1 minute to coat the silane coupling agent, and then force-dried at a temperature of 80° C. for 10 minutes.
アミン系シランカップリング剤で処理された金属端子と
導電性ペーストとの密着力の評価試験結果を詳述する。The results of an evaluation test of the adhesion between a metal terminal treated with an amine-based silane coupling agent and a conductive paste will be described in detail.
試験片は以下に示す試験方法によって作成した（第２図
参照）。A test piece was prepared according to the test method shown below (see Figure 2).
導電性ペーストは、金属粉末としてＡｇ粉末が８０Ｗセ
％、結合剤のジアリルフタレート系樹脂としてイソジア
リルフタレート樹脂（固形分）が２０ｗｔ％、さらに、
重合開始剤として重機過酸化物ｔ−ＢＰ（クーシャリ−
ブチルベンゾエイト）を前記結合剤樹脂固形分に対して
３ｗｔ％添加した。イソシアツルフタレート樹脂はエチ
ルカルピトールアセテート（以下、ＥＣＡとする）の希
釈溶媒にて６０％に希釈した状態で用いた。前記組成か
らなるものを混練し、粘度調整のためにＥＣＡを適量加
え、導電性ペーストを作成した。The conductive paste contains 80 wt% Ag powder as a metal powder, 20 wt% isodiallyl phthalate resin (solid content) as a diallyl phthalate resin as a binder, and
Heavy machinery peroxide t-BP (cushary) was used as a polymerization initiator.
butyl benzoate) was added in an amount of 3 wt % based on the solid content of the binder resin. The isocytulphthalate resin was used in a state diluted to 60% with a dilution solvent of ethyl carpitol acetate (hereinafter referred to as ECA). A conductive paste was prepared by kneading the composition described above and adding an appropriate amount of ECA to adjust the viscosity.
作成した導電性ペーストを高耐熱フィルム１０上にスク
リーン印刷し、８０℃の温度で１０分間オーブン乾燥す
ることにより、予め所望の形状をした導電性ペースト１
２ａ、１２ｂを形成しておいた。The prepared conductive paste is screen printed on a highly heat resistant film 10 and dried in an oven at a temperature of 80° C. for 10 minutes to obtain a conductive paste 1 having a desired shape in advance.
2a and 12b were formed.
この高耐熱フィルム１０上に形成された導電性ペースト
１２ａ、１２ｂとアミノ系シランカップリング剤で処理
された金属端子１３とが位置決めされた後、基板形成樹
脂材料１４（例えば、ジアリルフタレート脂等）と共に
、１６０±５°Ｃに加熱された圧縮成形機の成形型１５
ａ、 １５ｂに装入され、低圧２５ｋｇ／ｃｍ２で加正
しながら３０秒間予備加熱し、さらに、高圧１００ｋｇ
／ ０ｍ２で５分間加圧加温して金属端子１３と導電性
ペースト１２ａ、１２ｂを密着させた。After the conductive pastes 12a and 12b formed on this highly heat-resistant film 10 and the metal terminals 13 treated with an amino-based silane coupling agent are positioned, the substrate forming resin material 14 (for example, diallylphthalate resin, etc.) At the same time, the mold 15 of the compression molding machine was heated to 160±5°C.
a, 15b, preheated for 30 seconds while adjusting at low pressure 25kg/cm2, and then heated at high pressure 100kg/cm2.
/ 0 m2 for 5 minutes to bring the metal terminal 13 and the conductive pastes 12a and 12b into close contact.
金属端子１３としては、素材に黄銅を使用し、その表面
にＮｉメツキしたもの、ならびに素材にＣｕ合金を使用
し、その表面にはメツキを施さないもので実施した。The metal terminals 13 were made of brass with Ni plating on the surface, and with Cu alloy without plating on the surface.
金属端子１３と導電性ペースト１２ａ、 １２ｂとを密
着した後、高耐熱フィルム１０を剥離した。このように
して得られた試験片を用いて、導電性ペースト１２ａ、
１２ｂと金属端子１３との密着力についての評価試験を
実施した。After the metal terminal 13 and the conductive pastes 12a, 12b were brought into close contact with each other, the high heat resistant film 10 was peeled off. Using the test piece obtained in this way, conductive paste 12a,
An evaluation test was conducted to evaluate the adhesion between the metal terminal 12b and the metal terminal 13.
試験結果を以下の第１表に示す。比較のため、金属端子
１３をアミノ系シランカップリング剤で処理しなかった
場合の試験結果も併記する（第１表中実施例■及び比較
例■参照）。The test results are shown in Table 1 below. For comparison, the test results in the case where the metal terminal 13 was not treated with the amino-based silane coupling agent are also listed (see Example (■) and Comparative Example (■) in Table 1).
以上の第１表中の実施例■及び比較例■の結果から明ら
かなように、金属端子１３をアミノ系シランカップリン
グ剤で処理した場合には、クロスカットテープ剥離テス
トで密着性の改良が認められた。アミン系シランカップ
リング剤での処理濃度としては、０．３〜２．０ｗｔ％
の範囲で良好な密着性改良効果が得られた。As is clear from the results of Example ■ and Comparative Example ■ in Table 1 above, when the metal terminal 13 was treated with an amino-based silane coupling agent, the adhesion was improved in the cross-cut tape peel test. Admitted. The treatment concentration with the amine-based silane coupling agent is 0.3 to 2.0 wt%.
A good adhesion improvement effect was obtained within the range of .
さらに、実施例■で作成した導電性ペーストに、無水マ
レイン酸をジアリルフタレート系樹脂固形分に対して５
ｗｔ％添加した。この導電性ペーストを高耐熱フィルム
１１上にスクリーン印刷し、８０°Ｃの温度で１０分間
オーブン乾燥し、導電性ペースト１２ａ、１２ｂを作成
した。この導電性ペースト１２ａ。Furthermore, to the conductive paste prepared in Example
wt% was added. This conductive paste was screen printed on the highly heat resistant film 11 and dried in an oven at a temperature of 80° C. for 10 minutes to create conductive pastes 12a and 12b. This conductive paste 12a.
１２ｂを使用して、実施例■と同様の評価試験を実施し
た。An evaluation test similar to that in Example 2 was carried out using 12b.
試験結果は、第１表中の実施例■に示ず。比較のため、
金属端子１３をアミノ系シランカップリング剤で処理し
なかった場合の試験結果も併記する（比較例■参照）。The test results are not shown in Example ■ in Table 1. For comparison,
The test results obtained when the metal terminal 13 was not treated with the amino-based silane coupling agent are also listed (see Comparative Example 3).
第１表中の実施例■から明らかなように、無水マレイン
酸を添加した場合には、−
金属端子１３と導電性ペースト１２ａ、 １２ｂとの剥
離現象は全く認められなかった。As is clear from Example 1 in Table 1, when maleic anhydride was added, no peeling phenomenon was observed between the metal terminal 13 and the conductive pastes 12a and 12b.
また、無水マレイン酸の添加量が１ｗｔ％未滴のときは
、密着性改良効果は得られず、添加量が１５ｗｔ％を越
えるときは、混練開始から硬化り−るまでの時間が極め
て早く、実用的な導電性ペーストが得られなかった。Further, when the amount of maleic anhydride added is 1 wt%, no adhesion improvement effect can be obtained, and when the amount added exceeds 15 wt%, the time from the start of kneading to hardening is extremely short. A practical conductive paste could not be obtained.
さらに、無水フタル酸に対しても同様の試験を実施した
ところ同様の効果が得られた。Furthermore, when similar tests were conducted on phthalic anhydride, similar effects were obtained.
なあ、金属端子１３を非アミノ系シランカップリング剤
のメルカプト系シランカップリング剤で処理した場合が
、第１表中比較例■に示されている。Comparative Example (3) in Table 1 shows the case where the metal terminal 13 was treated with a mercapto silane coupling agent, which is a non-amino silane coupling agent.
比較例■のメルカプト系シランカップリング剤は、７−
メルカブトプロピルトリメトキシシランタノールにて０
． ３ｗｔ％に希釈したものを用いた。The mercapto-based silane coupling agent of Comparative Example ■ is 7-
0 in mercabutopropyltrimethoxysilanthanol
．． A solution diluted to 3 wt% was used.
金属端子１３はこの溶液に１分間浸漬した後、８０°Ｃ
の温度で１０分間強制乾燥を施した。第１表中比較例■
の結果から、非アミノ系シランカップリング剤では密着
性の改良効果が得られないことが示される。The metal terminal 13 was immersed in this solution for 1 minute and then heated to 80°C.
Forced drying was performed at a temperature of 10 minutes. Comparative example in Table 1■
The results show that non-amino silane coupling agents do not have the effect of improving adhesion.
発明の効里
本発明によれば、金属旬１，１子の表面を予め濃度０．
３〜２．０ｗｔ％のアミノ系シランカップリング剤で処
理することにより、ジアリルフタレート系導電性ペース
トと金属端子との密着性が向−１ニし、ジアノルックレ
ート系導電性ペーストの剥離が解消され、金属端子との
密着性が優れ、かつ、半田耐熱性にも優れた回路素子を
得ることができる。Efficacy of the Invention According to the present invention, the surface of the metal shell is preliminarily coated with a concentration of 0.
By treating with 3 to 2.0 wt% of amino-based silane coupling agent, the adhesion between the diallyl phthalate-based conductive paste and the metal terminal is improved to -1, and the peeling of the dianolookrate-based conductive paste is prevented. It is possible to obtain a circuit element that has excellent adhesion to metal terminals and excellent soldering heat resistance.
さらに、ジアリルフタレート系導電性ペーストに無水マ
レイン酸、あるい４．ｌ 、 ｊＨＨ（水フクル酸ろｒ
添加すれば、導電性ペーストと金属端子との密着は格段
に向上する。Furthermore, maleic anhydride is added to the diallyl phthalate-based conductive paste, or 4. l, jHH (hydrofucric acid filter)
If added, the adhesion between the conductive paste and the metal terminal will be significantly improved.
第１図は、本発明の一実施例である可変抵抗器に使用さ
れる抵抗体基板の断面図、第２図吐評価試験片の作成方
法を示す断面図である。
３・・・金属端子、７ 、１２ａ、 １２ｂ・・・導電
性ペースト、１３・・・金属端子。FIG. 1 is a cross-sectional view of a resistor substrate used in a variable resistor according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a method of preparing a discharge evaluation test piece. 3... Metal terminal, 7, 12a, 12b... Conductive paste, 13... Metal terminal.
Claims (2)
介して抵抗体又は導電体と電気的に接続されている回路
素子において、 濃度０．３〜２．０ｗｔ％のアミノ系シランカップリン
グ剤で処理した金属端子が、ジアリルフタレート系導電
性ペーストと密着していること、 を特徴とする回路素子。1. In a circuit element in which a metal terminal is electrically connected to a resistor or a conductor through a diallyl phthalate-based conductive paste, the metal terminal is treated with an amino-based silane coupling agent at a concentration of 0.3 to 2.0 wt%. is in close contact with a diallyl phthalate-based conductive paste.
タル酸、あるいは、無水マレイン酸をジアリルフタレー
ト系樹脂固形分に対して１〜１５ｗｔ％添加されている
ことを特徴とする請求項１記載の回路素子。2. 2. The circuit element according to claim 1, wherein the diallyl phthalate-based conductive paste contains 1 to 15 wt% of phthalic anhydride or maleic anhydride based on the solid content of the diallyl phthalate-based resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1176804A JP2993011B2 (en) | 1989-07-07 | 1989-07-07 | Circuit element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1176804A JP2993011B2 (en) | 1989-07-07 | 1989-07-07 | Circuit element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0343969A true JPH0343969A (en) | 1991-02-25 |
| JP2993011B2 JP2993011B2 (en) | 1999-12-20 |
Family
ID=16020133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1176804A Expired - Fee Related JP2993011B2 (en) | 1989-07-07 | 1989-07-07 | Circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2993011B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007141648A (en) * | 2005-11-18 | 2007-06-07 | Matsushita Electric Ind Co Ltd | Conductive paste composition, printed wiring board using the same, and manufacturing method of the same |
| JP2013069687A (en) * | 2011-09-20 | 2013-04-18 | Haraeus Materials Technology Gmbh & Co Kg | Paste and method for connecting electronic component to substrate |
-
1989
- 1989-07-07 JP JP1176804A patent/JP2993011B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007141648A (en) * | 2005-11-18 | 2007-06-07 | Matsushita Electric Ind Co Ltd | Conductive paste composition, printed wiring board using the same, and manufacturing method of the same |
| JP2013069687A (en) * | 2011-09-20 | 2013-04-18 | Haraeus Materials Technology Gmbh & Co Kg | Paste and method for connecting electronic component to substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2993011B2 (en) | 1999-12-20 |
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