JPH0343721Y2 - - Google Patents
Info
- Publication number
- JPH0343721Y2 JPH0343721Y2 JP1985112034U JP11203485U JPH0343721Y2 JP H0343721 Y2 JPH0343721 Y2 JP H0343721Y2 JP 1985112034 U JP1985112034 U JP 1985112034U JP 11203485 U JP11203485 U JP 11203485U JP H0343721 Y2 JPH0343721 Y2 JP H0343721Y2
- Authority
- JP
- Japan
- Prior art keywords
- current fuse
- terminal board
- semiconductor chip
- lead
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 29
- 239000011347 resin Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000007789 sealing Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Breakers (AREA)
Description
【考案の詳細な説明】
［産業上の利用分野］
本考案は、半導体チツプと電流ヒユーズとを一
体化した過電流保護機能を有する半導体装置に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device having an overcurrent protection function that integrates a semiconductor chip and a current fuse.
［従来の技術］
本件出願人は、実願昭60−5095によつて半導体
チツプと電流ヒユーズとを第３図及び第４図に示
す如く一体化することを提案した。第３図及び第
４図において、１，２は金属製端子板であり、外
部リード３，４を備えている。５は整流用のダイ
オードチツプであつて、端子板１の上に半田で固
着されている。６は内部リード兼電流ヒユーズで
あり、ダイオードチツプ５の上面と端子板２とに
接続されている。７は一般にJCRと呼ばれている
保護樹脂であり、少なくとも半導体チツプ５の上
に塗布されている。８は封止樹脂であり、端子板
１，２、半導体チツプ５、及び電流ヒユーズ６を
一体に被覆するものである。[Prior Art] The applicant of the present invention proposed in Utility Model Application No. 60-5095 to integrate a semiconductor chip and a current fuse as shown in FIGS. 3 and 4. In FIGS. 3 and 4, reference numerals 1 and 2 indicate metal terminal plates, which are provided with external leads 3 and 4. Reference numeral 5 denotes a rectifying diode chip, which is fixed on the terminal board 1 with solder. Reference numeral 6 denotes an internal lead/current fuse, which is connected to the upper surface of the diode chip 5 and the terminal board 2. 7 is a protective resin generally called JCR, which is coated on at least the semiconductor chip 5. 8 is a sealing resin that integrally covers the terminal boards 1 and 2, the semiconductor chip 5, and the current fuse 6.
［考案が解決しようとする問題点］
ところで、半導体チツプの特性は、光の作用で
変動するため、発光素子、受光素子等の光に関係
する特殊の半導体素子は別として、一般の半導体
素子を封止する場合には、光不透過性樹脂が使用
される。従つて、第３図及び第４図に示す構成の
半導体装置においても、封止樹脂として光不透過
性樹脂を使用した。この結果、ヒユーズ６とダイ
オードチツプ５とを一体化した素子が組み込まれ
ている電子機器の異常が発生した時に、電流ヒユ
ーズが溶断したのか、又は別の回路の異常である
のかを判断することが困難であつた。即ち、電流
ヒユーズ６が溶断したのか否かのチエツクを電気
的に行う必要があり、極めて面倒であつた。ま
た、ダイオードチツプ５の熱がヒユーズ６に影響
を及ぼすという問題があつた。[Problems to be solved by the invention] By the way, the characteristics of semiconductor chips change due to the action of light, so apart from special semiconductor elements related to light such as light emitting elements and light receiving elements, general semiconductor elements cannot be used. For sealing, a light-opaque resin is used. Therefore, also in the semiconductor devices having the configurations shown in FIGS. 3 and 4, a light-opaque resin was used as the sealing resin. As a result, when an abnormality occurs in an electronic device in which an element that integrates the fuse 6 and diode chip 5 is incorporated, it is possible to determine whether the current fuse has blown or the abnormality is in another circuit. It was difficult. That is, it is necessary to electrically check whether or not the current fuse 6 has blown, which is extremely troublesome. Another problem was that the heat of the diode chip 5 affected the fuse 6.
そこで、本考案の目的は電流ヒユーズの溶断を
容易に確認することができ且つヒユーズと半導体
チツプとの相互干渉を少なくすることができる電
流ヒユーズ内蔵の絶縁物封止型半導体装置を提供
することにある。 Therefore, the purpose of the present invention is to provide an insulator-sealed semiconductor device with a built-in current fuse, which can easily confirm whether the current fuse is blown or not, and which can reduce mutual interference between the fuse and the semiconductor chip. be.
［問題点を解決するための手段］
上記目的を達成するための本考案は、実施例を
示す図面の符号を参照して説明すると、幅広部分
と第１のリード１３とを有する第１の端子板１１
と、第２のリード２１を有する第２の端子板２０
と、第３のリード１４を有する第３の端子板１２
と、前記第１の端子板１１の前記幅広部分に固着
された半導体チツプ１５と、前記半導体チツプ１
５と前記第２の端子板２０とを接続する内部リー
ド細線２２と、その一端が前記第２の端子板２０
に接続され、その他端が前記第３の端子板１２に
接続された電流ヒユーズ１６と、外来光から遮へ
いするように前記半導体チツプ１５を被覆する光
不透過性樹脂１７と前記電流ヒユーズ１６の少な
くとも溶断する部分を外部から目視することがで
きるように設けられた光透過性樹脂とを有して、
前記第１、第２及び第３の端子板１１，２０，１
２と前記半導体チツプ１５と前記内部リード細線
２２と前記電流ヒユーズ１６とを被覆する封止体
とを備えた過電流保護機能を有する半導体装置に
係わるものである。[Means for Solving the Problems] To achieve the above object, the present invention will be described with reference to the reference numerals in the drawings showing the embodiments. Board 11
and a second terminal board 20 having a second lead 21
and a third terminal plate 12 having a third lead 14.
, a semiconductor chip 15 fixed to the wide portion of the first terminal board 11, and the semiconductor chip 1
5 and the second terminal board 20, and one end thereof connects the second terminal board 20.
a current fuse 16 whose other end is connected to the third terminal plate 12; a light-opaque resin 17 which covers the semiconductor chip 15 to shield it from external light; and at least the current fuse 16. It has a light-transmitting resin provided so that the part to be fused can be visually observed from the outside,
The first, second and third terminal plates 11, 20, 1
2 and a sealing body that covers the semiconductor chip 15, the internal lead thin wire 22, and the current fuse 16, and has an overcurrent protection function.
［作用］
上記考案においては、半導体チツプ１５は外来
光から遮へいされているので、外来光入射による
特性変動の問題が発生しない。一方、電流ヒユー
ズ１６は外部から目視可能であるので、これが溶
断したか否かを極めて容易に確認することができ
る。また、電流ヒユーズ１６が半導体チツプ１５
に直接に接続されていないし、リード細線２２か
ら伝わる熱も第２の端子板２０で良好に放熱され
るから、電流ヒユーズ１６に対する半導体チツプ
の熱の影響を小さくできる。[Operation] In the above-described invention, since the semiconductor chip 15 is shielded from external light, the problem of characteristic fluctuation due to the incidence of external light does not occur. On the other hand, since the current fuse 16 can be visually observed from the outside, it can be extremely easily confirmed whether or not it has blown. Further, the current fuse 16 is connected to the semiconductor chip 15.
Since the second terminal board 20 is not directly connected to the lead wire 22 and the heat transmitted from the thin lead wire 22 is well radiated by the second terminal board 20, the influence of the heat of the semiconductor chip on the current fuse 16 can be reduced.
［実施例］
次に、第１図及び第２図に示す本考案の実施例
に係わるヒユーズ内蔵ダイオードについて説明す
る。[Embodiment] Next, a diode with a built-in fuse according to an embodiment of the present invention shown in FIGS. 1 and 2 will be described.
図において、１１，２０，１２はNi被覆Cu板
から成る第１、第２及び第３の端子板であり、リ
ード１３，２１，１４を夫々有している。各端子
板１１，２０，１２は各リード１３，２１，１４
よりも幅広の部分を有する。１５は清流用ダイオ
ードチツプであり、第１の端子板１１の幅広部分
の上に半田（図示せず）で固着されている。ダイ
オードチツプ１５の上側の電極は内部リード細線
２２によつて第２の端子板２０に接続されてい
る。１６は直径50μmのAu線から成る電流ヒユー
ズであり、その一端が第２の端子板２０に接続さ
れ、その他端が第３の端子板１２に接続されてい
る。１７は黒色且つ光不透過性のシリコンラバー
から成る一般にJCRと呼ばれている保護樹脂であ
り、ダイオードチツプ１５を被覆するように塗布
されている。１８は透明度の良いシリコンラバー
から成る保護樹脂であり、溶断特性を安定させる
ために電流ヒユーズ１６を囲むように配設されて
いる。１９は透明度の良いエポキシ樹脂から成る
封止樹脂であり、端子板１１，２０，１２、ダイ
オードチツプ１５、内部リード細線２２、電流ヒ
ユーズ１６、保護樹脂１７，１８を囲むようにト
ランスフアモールド法で形成されている。なお、
この封止樹脂１９は、第２図から明らかな如く、
電流ヒユーズ１６に対応させて凸レンズ効果を得
るための半球状突起１９ａを有している。 In the figure, 11, 20, and 12 are first, second, and third terminal plates made of Ni-coated Cu plates, and have leads 13, 21, and 14, respectively. Each terminal board 11, 20, 12 has each lead 13, 21, 14
It has a wider part. Reference numeral 15 designates a diode chip for clear flow, which is fixed onto the wide portion of the first terminal plate 11 with solder (not shown). The upper electrode of the diode chip 15 is connected to the second terminal plate 20 by an internal lead wire 22. Reference numeral 16 denotes a current fuse made of an Au wire with a diameter of 50 μm, one end of which is connected to the second terminal plate 20, and the other end connected to the third terminal plate 12. Reference numeral 17 denotes a protective resin generally called JCR, which is made of black and non-transparent silicone rubber, and is applied to cover the diode chip 15. 18 is a protective resin made of silicone rubber with good transparency, and is arranged to surround the current fuse 16 in order to stabilize the fusing characteristics. Reference numeral 19 denotes a sealing resin made of epoxy resin with good transparency, and is molded by a transfer molding method so as to surround the terminal plates 11, 20, 12, the diode chip 15, the internal lead thin wire 22, the current fuse 16, and the protective resin 17, 18. It is formed. In addition,
As is clear from FIG. 2, this sealing resin 19 is
It has a hemispherical protrusion 19a corresponding to the current fuse 16 to obtain a convex lens effect.
第１図及び第２図の素子を形成する時には、リ
ードフレーム構成の端子板１１，２０，１２を用
意し、まず、ダイオードチツプ１５と、リード細
線２２と、電流ヒユーズ１６とを取り付け、次
に、保護樹脂１７，１８を設け、しかる後、第２
図に示す如く封止樹脂１９を設ける。 When forming the elements shown in FIGS. 1 and 2, terminal plates 11, 20, and 12 having a lead frame structure are prepared. First, a diode chip 15, a thin lead wire 22, and a current fuse 16 are attached, and then , the protective resins 17 and 18 are provided, and then the second
A sealing resin 19 is provided as shown in the figure.
上述の電流ヒユーズ１６は、定格電流1Aの６
倍の電流6Aを流した時に２秒以内に溶断する。
この電流ヒユーズ１６の溶断は、半球状突起１９
ａの凸レンズ効果を利用してヒユーズ１６を目視
することによつて明確に知ることができる。一
方、ダイオードチツプ１５は光不透過性保護樹脂
１７によつて覆われているので、封止樹脂１９が
透明であつても、外来光が保護樹脂１７で遮断さ
れる。従つて、ダイオードチツプ１５の特性が外
来光の入射で変動することがない。また、ヒユー
ズ１６の一端はダイオードチツプ１５に直接に接
続されずに、中間の端子板２０に接続されている
ので、ヒユーズ１６とダイオードチツプ１５との
間の熱的干渉が少なくなる。なお、外部リード２
１を例えば平滑用コンデンサの接続に使用する。 The above-mentioned current fuse 16 has a rated current of 1A.
It melts within 2 seconds when twice the current of 6A is applied.
The blowing of this current fuse 16 is caused by the hemispherical protrusion 19
This can be clearly determined by visually observing the fuse 16 using the convex lens effect of a. On the other hand, since the diode chip 15 is covered with the light-impermeable protective resin 17, even if the sealing resin 19 is transparent, external light is blocked by the protective resin 17. Therefore, the characteristics of the diode chip 15 do not change due to the incidence of external light. Further, since one end of the fuse 16 is not connected directly to the diode chip 15 but to the intermediate terminal plate 20, thermal interference between the fuse 16 and the diode chip 15 is reduced. In addition, external lead 2
1 is used, for example, to connect a smoothing capacitor.
［変形例］
本考案は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。[Modifications] The present invention is not limited to the above-described embodiments, but can be modified as follows, for example.
(a) ブリツジ型整流回路にも適用可能である。ま
たトランジスタのコレクタに電流ヒユーズを直
列に接続する場合にも適用可能である。(a) It is also applicable to bridge type rectifier circuits. It is also applicable to the case where a current fuse is connected in series to the collector of a transistor.
(b) 封止樹脂１９を２種類とし、光不透過性樹脂
によつて電流ヒユーズ１６を除く部分を被覆
し、電流ヒユーズ１６の部分を透明性樹脂で被
覆するようにしてもよい。この場合には、保護
樹脂１７を光透過性にしてもよい。(b) Two types of sealing resin 19 may be used, and a portion other than the current fuse 16 may be covered with a light-opaque resin, and a portion where the current fuse 16 is covered with a transparent resin. In this case, the protective resin 17 may be made transparent.
(c) 電流ヒユーズ１６の溶断の安定性が高い場合
には保護樹脂１８を省いた構成としてもよい。(c) If the current fuse 16 has high stability in fusing, the protective resin 18 may be omitted.
［考案の効果］
上述から明らかな如く、本考案によれば、半導
体チツプを外来光から保護しつつ、電流ヒユーズ
の溶断のチエツクを容易に達成することができ、
更に、電流ヒユーズと半導体チツプとの熱的相互
干渉を防ぐことができる。[Effects of the invention] As is clear from the above, according to the invention, it is possible to easily check whether the current fuse is blown while protecting the semiconductor chip from external light.
Furthermore, mutual thermal interference between the current fuse and the semiconductor chip can be prevented.
第１図は本考案の実施例に係わるヒユーズ内蔵
ダイオードを示す平面図、第２図は第１図のＡ−
Ａ線に相当する部分の断面図、第３図は従来のヒ
ユーズ内蔵ダイオードの樹脂封止前の状態を示す
平面図、第４図は第３図のダイオードの樹脂封止
後を示す平面図である。
１５……ダイオードチツプ、１６……電流ヒユ
ーズ、１７……光不透過性保護樹脂、１８……透
過性保護樹脂、１９……透明性封止樹脂。
FIG. 1 is a plan view showing a diode with a built-in fuse according to an embodiment of the present invention, and FIG.
A cross-sectional view of a portion corresponding to the A line, FIG. 3 is a plan view showing a state of a conventional diode with a built-in fuse before resin sealing, and FIG. 4 is a plan view showing the diode in FIG. 3 after resin sealing. be. 15... Diode chip, 16... Current fuse, 17... Light-opaque protective resin, 18... Transparent protective resin, 19... Transparent sealing resin.
Claims (1)
端子板１１と、 第２のリード２１を有する第２の端子板２０
と、 第３のリード１４を有する第３の端子板１２
と、 前記第１の端子板１１の前記幅広部分に固着さ
れた半導体チツプ１５と、 前記半導体チツプ１５と前記第２の端子板２０
とを接続する内部リード細線２２と、 その一端が前記第２の端子板２０に接続され、
その他端が前記第３の端子板１２に接続された電
流ヒユーズ１６と、 外来光から遮へいするように前記半導体チツプ
１５を被覆する光不透過性樹脂１７と前記電流ヒ
ユーズ１６の少なくとも溶断する部分を外部から
目視することができるように設けられた光透過性
樹脂とを有して、前記第１、第２及び第３の端子
板１１，２０，１２と前記半導体チツプ１５と前
記内部リード細線２２と前記電流ヒユーズ１６と
を被覆する封止体とを備えた過電流保護機能を有
する半導体装置。[Claims for Utility Model Registration] A first terminal board 11 having a wide portion and a first lead 13, and a second terminal board 20 having a second lead 21.
and a third terminal board 12 having a third lead 14.
, a semiconductor chip 15 fixed to the wide portion of the first terminal board 11 , and the semiconductor chip 15 and the second terminal board 20
an internal lead thin wire 22 connecting the two terminals, one end of which is connected to the second terminal board 20,
A current fuse 16 whose other end is connected to the third terminal plate 12, a light-opaque resin 17 that covers the semiconductor chip 15 to shield it from external light, and at least a portion of the current fuse 16 that is to be fused. The first, second, and third terminal plates 11, 20, 12, the semiconductor chip 15, and the inner lead thin wire 22 are provided with a light-transmitting resin so as to be visible from the outside. and a sealing body that covers the current fuse 16. A semiconductor device having an overcurrent protection function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985112034U JPH0343721Y2 (en) | 1985-07-22 | 1985-07-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985112034U JPH0343721Y2 (en) | 1985-07-22 | 1985-07-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6219747U JPS6219747U (en) | 1987-02-05 |
| JPH0343721Y2 true JPH0343721Y2 (en) | 1991-09-12 |
Family
ID=30992523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985112034U Expired JPH0343721Y2 (en) | 1985-07-22 | 1985-07-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0343721Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730351A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Resin-sealed type semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166346U (en) * | 1981-04-13 | 1982-10-20 |
-
1985
- 1985-07-22 JP JP1985112034U patent/JPH0343721Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730351A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Resin-sealed type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6219747U (en) | 1987-02-05 |
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