JPH0341620A - Hard amorphous carbon film - Google Patents
Hard amorphous carbon filmInfo
- Publication number
- JPH0341620A JPH0341620A JP17629389A JP17629389A JPH0341620A JP H0341620 A JPH0341620 A JP H0341620A JP 17629389 A JP17629389 A JP 17629389A JP 17629389 A JP17629389 A JP 17629389A JP H0341620 A JPH0341620 A JP H0341620A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous carbon
- carbon film
- film
- adhesion
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000001050 lubricating effect Effects 0.000 abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 235000011470 Adenanthera pavonina Nutrition 0.000 description 1
- 240000001606 Adenanthera pavonina Species 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 description 1
- MMOXZBCLCQITDF-UHFFFAOYSA-N N,N-diethyl-m-toluamide Chemical compound CCN(CC)C(=O)C1=CC=CC(C)=C1 MMOXZBCLCQITDF-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 206010015037 epilepsy Diseases 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Lubricants (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明け、たとえば磁気ディスクや、磁気ヘッド等の
表面に付着させる表面保護潤滑膜に適する硬質非晶質炭
素膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a hard amorphous carbon film suitable as a surface protective lubricant film to be attached to the surface of, for example, a magnetic disk or a magnetic head.
磁気ディスクや磁気ヘッドは、磁気ディスク表面として
、コンピュータの外部記憶装置に広く用いられている。Magnetic disks and magnetic heads are widely used as magnetic disk surfaces in external storage devices of computers.
上記磁気ディスクは例えばアルミニウム合金基板上に０
ＯＮｉＯｒ等の磁性層音形成して用いられている。磁気
ヘッドにはいろいろな方式があるが通常できるだけ磁気
ディスク表面に近づけて使用される。このため磁気ヘラ
）、お、えアイユ、ゆ。８６（。。。□。ｄ択ｒ、、ｔ
、−。The magnetic disk is mounted on an aluminum alloy substrate, for example.
It is used by forming a magnetic layer such as ONiOr. There are various types of magnetic heads, but they are usually used as close to the magnetic disk surface as possible. For this reason, magnetic spatula), oh, eh, yu, yu. 86(...□.d choice r,,t
,-.
動作等により、互いｌＣｗ：触を起こす。Cause contact with each other due to actions, etc.
従って、ディスク表面の損傷ケ防ぐための保護膜を必要
とする。Therefore, a protective film is required to prevent damage to the disk surface.
保！！膜の特性としては、ｅ＊耗性に優れていること、
基板への密着性が高いこと、表面の潤滑性に優れている
ことなどが挙げられる。倭硬度は高いほど耐摩耗性に優
れてｉ？６．密着性は磁気ヘッドの接触時あるいは摩擦
時に保護膜が剥離しないために重要である。Safe! ! The film has excellent e* wear resistance;
Examples include high adhesion to the substrate and excellent surface lubricity. The higher the hardness, the better the wear resistance.i? 6. Adhesion is important so that the protective film does not peel off when the magnetic head contacts or rubs.
従来、この目的のために厚み５００Ａ程度の二酸化ケイ
素（Ｓ１０−やアルξす（Ａｔ＠Ｏｓ）等の酸化物やカ
ーボン膜が用いられていた。８１０．やＡ／。Conventionally, oxides such as silicon dioxide (S10-, At@Os) or carbon films having a thickness of about 500A have been used for this purpose.810. and A/.
０、は通常シリコンやアル宅ニウムの有機金属化合物全
溶媒中に溶解したもの１ｊｔ塗布乾燥後、熱処理する方
法や、アルゴンと酸素の混合ガス中でスパッタリングす
るか、あるいＶｉ、蒸着法で作られていた。0 is usually made by applying an organic metal compound of silicon or aluminum dissolved in a total solvent, applying and drying it and then heat treating it, sputtering in a mixed gas of argon and oxygen, or using a evaporation method. It was getting worse.
カーボン膜は例えば特開昭５２−９０２８１％公報に記
載されたような炭素電極の放電によって形成される炭素
イオンビーム蒸着法ないしはスバッタ法などの方法で作
られていた。The carbon film has been made, for example, by a carbon ion beam evaporation method or a sputtering method, which is formed by discharging a carbon electrode, as described in Japanese Patent Application Laid-Open No. 52-90281.
先に述べた種々の従来の保護膜材料は、しかしながら十
分な硬度密着性含有してからす、特に高密度記録のため
にヘッド材料が硬くなってゆくと、保護膜の方が柔らか
くなってし筐い、ヘッドとディスクが接触した時、ディ
スクに傷が入ったり保護膜が剥離してし！うという問題
点があった。The various conventional protective film materials mentioned above, however, have sufficient hardness and adhesion, but as the head material becomes harder, especially for high-density recording, the protective film becomes softer. When the housing, head, and disk come into contact, the disk gets scratched or the protective film peels off! There was a problem.
この発明は上記のような問題点を解消するためＶＣなさ
れたもので、高ｔ４度で耐摩耗性に優れ、かつ、潤滑性
の良好な、磁気ディスク表面保＃膜などの用途に適する
保護膜材料を提供することを目的とする。This invention was developed by VC in order to solve the above-mentioned problems, and is a protective film that has a high t4 degree, excellent wear resistance, and good lubricity, and is suitable for applications such as magnetic disk surface # retaining film. The purpose is to provide materials.
この発明に係る硬質非晶質炭素膜は水素金含有する非晶
質炭素膜に更にシリコン（ｓｌ）とフッ素ｔＦｌを含有
させたものである。The hard amorphous carbon film according to the present invention is a hydrogen-gold-containing amorphous carbon film further containing silicon (sl) and fluorine tFl.
通常のメタンと水素との混合ガスを馬脚＃（１８，６６
ＭＨｚ）グロー放電させることによって得られる幌は非
晶質で約１０％以上の水素金嘆中に含有している。Mixed gas of ordinary methane and hydrogen
The canopy obtained by glow discharge (MHz) is amorphous and contains about 10% or more of hydrogen.
水素は炭素原子のダングリングボンドの部分に入り、炭
素の連＃ｔ１に閉じることによって、非晶質状ｍｔ安定
化させている構造とされている。The structure is such that hydrogen enters the dangling bond of the carbon atom and closes to the carbon chain #t1, thereby stabilizing the amorphous mt.
このような非晶質炭素膜中に種々の元＃金添加すること
により密着性、硬度、表面潤滑性に対して効果があるこ
とを見いだした。とくにシリコン（８１）の添加によっ
て密着性の向上が、筐たフッ素（目の添加によって、表
面ｅ４滑性が向上するものと思われる。It has been found that adding various types of gold to such an amorphous carbon film has effects on adhesion, hardness, and surface lubricity. In particular, it is thought that the addition of silicon (81) improves the adhesion, and the addition of fluorine (81) improves the surface smoothness.
以下、この発明の一実宛／Ｊ ’に図について説明する
・この発明の一実施例による非晶質炭素膜は水１１ （
Ｈ，）中にメタン（ＣＨ４）を０．１〜８０％の＠囲で
成金した気体を第１図に示すように平行平板型高周波（
ｔｓ、ａｅＭａｇ）プラズマＣＶＤ装置にて合成する・
この装置は真空槽（１；内に対向して配置される２りの
電ｔ！ｋｔ’ｌｌｌ、・３）を備え一方の電極！３１上
には基板＋４）が配置され％！たヒーターｎも備えられ
ているＯ
真空槽…にはガス濃入口（８）が取付けられ、マス７０
−コントローラー１９１ 、１１０１ 、 ＜１υを通
して、それぞれＯＨ，ガスＩＪ２Ｊ、Ｈｗ力Ｘ（１：１
．ＳｉＦ４＃ＸＧ４ノボンベが接続されている。！た真
空槽…には圧力＃！４！！ ！８１６１ ｋ介して排気
ポンプ系１１１が配置されている。Hereinafter, the figure will be explained to J', an embodiment of this invention.The amorphous carbon film according to an embodiment of this invention is water
A gas formed by forming methane (CH4) in an atmosphere of 0.1 to 80% in H, ) was heated to a parallel plate type high frequency (
ts, aeMag) is synthesized using a plasma CVD device. This device is equipped with two electrodes t!kt'llll, 3) arranged facing each other in a vacuum chamber (1; one electrode! The board +4) is placed on 31 and %! A gas concentration inlet (8) is attached to the vacuum chamber..., which is also equipped with a heater n.
- OH, gas IJ2J, Hw force X (1:1
．． SiF4#XG4 cylinder is connected. ! The pressure in the vacuum chamber is #! 4! ! ! An exhaust pump system 111 is arranged through the 8161k.
硬質非晶質炭素膜の合成には第１図に示すような平行平
板型高周波プラズマｃｖＤ！！Ｉｔ用い、１ず画電極１
２１３１間に高周波電力を印加し、ｉｓ極側に基板を設
置した。放電電力はｇｏ ｗとし、圧力は１ｌＯＰａと
した。反応ガスは流量比ＣＨ４；Ｈｌ；８１Ｆ、 ＃
ｊＧ、：５：１で成膜した。この時の酸膜速度は約９
０Ａ／癲であった。For the synthesis of hard amorphous carbon films, parallel plate high frequency plasma CVD as shown in Figure 1 is used! ! Using It, 1 picture electrode 1
High frequency power was applied between 2131 and the substrate was placed on the is pole side. The discharge power was set to go and the pressure was set to 1 lOPa. The reaction gas has a flow ratio of CH4; Hl; 81F, #
The film was formed at a ratio of:jG:5:1. The acid film speed at this time is approximately 9
It was 0A/epilepsy.
得られた膜の膜＃ＩＳｌ！度を測定したところ、ビッカ
ース４１ｔ！１度テａｖ−ｓｇｏｏＮｇｇｏｏ以上ト硬
イものであった。この値は薄膜ヘッド材料の硬度ＨＶ−
ａｏｏｏ よりもさらに硬く、耐摩耗性に優れてい４゜
るものと考えられる。また、できた膜の表面の摩擦係数
もμｍ０．１程度と小さく、潤滑性も有しているものと
考えられる。Membrane #ISl of the obtained membrane! When I measured the degree, it was Vickers 41t! It was even harder than once. This value is the hardness of the thin film head material HV-
It is thought that it is even harder than aooo and has excellent wear resistance. Furthermore, the friction coefficient of the surface of the formed film is as small as about 0.1 μm, and it is thought that it also has lubricity.
なか、上記実ｉ例では、固定磁気ディスクに用いる硬質
非晶質炭素膜について説明したが、含有するＳｌやＰの
暖によって密着性や摩擦係数も制御でき、同様にフロッ
ピーディスク磁気テープカード等の各種の基体に対して
も６用でき、同様の効果が期待できる。In the above practical example, the hard amorphous carbon film used for fixed magnetic disks was explained, but the adhesion and coefficient of friction can be controlled by the warmth of the contained Sl and P, and it can also be used for floppy disks, magnetic tape cards, etc. It can be used for various types of substrates, and similar effects can be expected.
以上のようにこの発明によれば水素を含有する非晶質炭
素膜に、更にシリコンおよびフッ素を含有させたので、
極めて高硬度でまた１表面のｆＲｆｆｉ性も有する新し
い保護潤滑幌を得ることができる。As described above, according to the present invention, since silicon and fluorine are further contained in the amorphous carbon film containing hydrogen,
A new protective lubricating canopy can be obtained which has extremely high hardness and also has fRffi properties on one surface.
第１図はこの発明の一実旋例による硬質非晶質炭素膜を
形成する平行平板型高周波プラズマＣＶＤ装置を示す概
略構成図である。第１図に釦いて１１１は真空槽、 ！
！＋ 、 （３１は電極、１４１は基板、４１げヒータ
ー、（６）は圧力調整器、（７）は排気ポンプ、（８１
６−ｊガス導入口、 ＋９１ 、 ＋１０１ 、 （Ｉ
ｌｌ ｎ マス７０−コントローラー、α２１はメタン
（０１１４）ガス、 α３１け水ｓＣａｇ）ガス、α４
は四フッ化シラン（８１１Ｆ、）ガスを示す。
なか、図中、同一符号ばＩＩ：ＩＪ−又は相当部分金示
す。FIG. 1 is a schematic configuration diagram showing a parallel plate type high frequency plasma CVD apparatus for forming a hard amorphous carbon film according to an example of the present invention. Click the button 111 in Figure 1 for the vacuum chamber!
! +, (31 is an electrode, 141 is a substrate, 41 is a heater, (6) is a pressure regulator, (7) is an exhaust pump, (81 is a
6-j gas inlet, +91, +101, (I
ll n mass 70-controller, α21 is methane (0114) gas, α31 water sCag) gas, α4
indicates tetrafluorosilane (811F,) gas. In the drawings, the same reference numerals indicate II:IJ- or equivalent parts.
Claims (1)
含有せしめた硬質非晶質炭素膜。A hard amorphous carbon film containing silicon and fluorine in an amorphous carbon film containing hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17629389A JPH0341620A (en) | 1989-07-07 | 1989-07-07 | Hard amorphous carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17629389A JPH0341620A (en) | 1989-07-07 | 1989-07-07 | Hard amorphous carbon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0341620A true JPH0341620A (en) | 1991-02-22 |
Family
ID=16011055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17629389A Pending JPH0341620A (en) | 1989-07-07 | 1989-07-07 | Hard amorphous carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0341620A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH056532A (en) * | 1991-06-28 | 1993-01-14 | Nec Corp | Magnetic disk |
| KR100956179B1 (en) * | 2004-10-06 | 2010-05-04 | 리에 우스이 | Fryer |
-
1989
- 1989-07-07 JP JP17629389A patent/JPH0341620A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH056532A (en) * | 1991-06-28 | 1993-01-14 | Nec Corp | Magnetic disk |
| KR100956179B1 (en) * | 2004-10-06 | 2010-05-04 | 리에 우스이 | Fryer |
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