JPH033355A - Hybrid integrated circuit - Google Patents
Hybrid integrated circuitInfo
- Publication number
- JPH033355A JPH033355A JP1138613A JP13861389A JPH033355A JP H033355 A JPH033355 A JP H033355A JP 1138613 A JP1138613 A JP 1138613A JP 13861389 A JP13861389 A JP 13861389A JP H033355 A JPH033355 A JP H033355A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- switching element
- integrated circuit
- power supply
- rectifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は混成集積回路に関し、特に整流電源回路を集積
化した混成集積回路に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a hybrid integrated circuit, and particularly to a hybrid integrated circuit in which a rectifying power supply circuit is integrated.
（ロ）従来の技術
整流器を用いて交流電源を直流′＃、源に変換する整流
電源回路は第５図に示す如く回路が一般的に知られてい
る。また第５図に示した整流電源回路の力率を改善し高
調波含有率を少なくする目的でスイッチング素子を用い
てチョッピングを行う回路が近年注目されている。その
回路は第６図に示す如く、ブリッジ構成の整流素子（２
１）と、整流素子（２１）によって整流された出力を短
絡させるスイッチングトランジスタ（２２）と、スイッ
チングトランジスタ（２２）をオン・オフさせる駆動回
路（２３〉と、スイッチングトランジスタ（２２）に流
れる電流を検出しスイッチングトランジスタ（２２）を
電流保護する電流保護回路（２４）とから構成されてい
る。(b) Prior Art A rectifying power supply circuit as shown in FIG. 5 is generally known as a rectifying power supply circuit for converting an AC power source into a DC power source using a rectifier. Further, a circuit that performs chopping using a switching element for the purpose of improving the power factor and reducing the harmonic content of the rectified power supply circuit shown in FIG. 5 has recently attracted attention. As shown in Figure 6, the circuit consists of rectifying elements (2
1), a switching transistor (22) that short-circuits the output rectified by the rectifying element (21), a drive circuit (23) that turns on and off the switching transistor (22), and a current flowing through the switching transistor (22). The current protection circuit (24) detects the current and protects the switching transistor (22).
以下その動作を簡単に説明する。交流入力端子から交流
電源が印加されると整流素子（２１）によって直流電源
に変換された電源が負荷に供給される。The operation will be briefly explained below. When AC power is applied from the AC input terminal, the rectifier (21) converts the power into DC power and supplies it to the load.
コントロール回路（２５）から所定のパルス信号が駆動
回路（２３）に入力されると駆動回路（２３）から所定
のパルス信号がスイッチングトランジスタ（２２）のベ
ースに出力され、スイッチングトランジスタ（２２）が
オンされる。スイッチングトランジスタ（２２）がオン
されるとｖＡｃからＩＡＣがコイル（２６）を通して整
流素子（２１）を介してスイッチングトランジスタ（２
２）のコレクターエミッタ間に流れる。このときフィル
（２６）に１７２・Ｌ”ＩＡＣ”のエネルギーが蓄えら
れる。When a predetermined pulse signal is input from the control circuit (25) to the drive circuit (23), the predetermined pulse signal is output from the drive circuit (23) to the base of the switching transistor (22), and the switching transistor (22) is turned on. be done. When the switching transistor (22) is turned on, IAC from vAc passes through the coil (26), the rectifying element (21), and the switching transistor (2).
2) flows between the collector and emitter. At this time, energy of 172·L"IAC" is stored in the fill (26).
コントしＩ−ル回路（２５）より駆動回路（２３）に所
定のパルス信号が入力され、駆動回路（２３）からスイ
ッチングトランジスタ（２２）のベースに所定のパルス
信号が入力され、スイッチングトランジスタ（２２）が
オフされると％ＩＡｌ：はコイル（２６）に蓄えられた
１／２・Ｌ・工Ａ♂のエネルギーを放出しようとしてＶ
ｃ２をはね上げ（逆起電圧）Ｖ、、＜Ｖ。、となってダ
イオード（２７）を介してコンデンサ（２８）や負荷（
２９）にコイル（２６）から電源が供給される。A predetermined pulse signal is input from the control circuit (25) to the drive circuit (23), a predetermined pulse signal is input from the drive circuit (23) to the base of the switching transistor (22), and the predetermined pulse signal is input to the base of the switching transistor (22). ) is turned off, %IAl: tries to release the energy of 1/2・L・Engine A♂ stored in the coil (26) and V
Jump up c2 (back electromotive force) V, ,<V. , and the capacitor (28) and load (
29) is supplied with power from the coil (26).
この動作はスイッチングトランジスタ（２２）がオフ状
態でのｖＡｃ＞ｖｃのみでもＩＡＣが流れる場合と異な
り、Ｖａｃ＜ＶｃでもＩＡＣが流れ負荷に電源を供給す
ることが可能となり、力率を向上させ高調波の発生を抑
制するものである。This operation differs from the case where IAC flows even if only vAc>vc when the switching transistor (22) is in the off state, but IAC flows even when Vac<Vc and it is possible to supply power to the load, improving the power factor and reducing harmonics. This is to suppress the occurrence of
第６図で示す力率を向上させる整流電源回路（点線内）
を混成集積回路に集積化する場合、通常セラミックス基
板等の絶縁基板上にディスクリート部品によって構成さ
れていた。特に発熱を有する整流素子及びスイッチング
トランジスタ及び検出抵抗は絶縁基板にチップ部品で直
接実装することが困難であり、ディスクリート部品を用
いて集積化されていた。A rectifier power supply circuit that improves the power factor shown in Figure 6 (within the dotted line)
When integrated into a hybrid integrated circuit, it is usually constructed using discrete components on an insulating substrate such as a ceramic substrate. In particular, rectifying elements, switching transistors, and detection resistors that generate heat are difficult to directly mount as chip components on an insulating substrate, and have been integrated using discrete components.
（八）発明が解決しようとする課題
上述した整流電源回路を混成集積回路に集積化した場合
、スイッチングトランジスタは比較的大きな大電流をオ
ン・オフ制御するためにスイッチングノイズを多発に発
生する危険性を有しており、この回路を従来の様にパワ
ー単体部品（ディスクリート部品）の組合せによって集
積化した場合には、ディスクリート部品を接続するワイ
ヤ線からノイズが発生し、そのノイズが他の電子回路部
品あるいは整流電源回路と接続される電気機器（テレビ
、ラジオ、エアコン、ビデオ等）に悪影響を及し大きな
問題となる。(8) Problems to be Solved by the Invention When the above-mentioned rectifying power supply circuit is integrated into a hybrid integrated circuit, there is a risk that switching noise will occur frequently because the switching transistor controls on/off of a relatively large current. If this circuit is integrated by combining power single components (discrete components) as in the past, noise will be generated from the wires connecting the discrete components, and that noise will be transmitted to other electronic circuits. This poses a major problem as it adversely affects electrical equipment (TVs, radios, air conditioners, video cameras, etc.) that are connected to components or rectified power supply circuits.
（ニ）課題を解決するための手段
本発明は上述した課題に鑑みて為されたものであり、商
用交流１源に接続される整流回路と、前記整流回路の出
力を短絡させるスイッチング素子と、前記スイッチング
素子をオン・オフさせる駆動回路と、前記スイッチング
素子を保護する保護回路とを備えた整流電源回路を同一
基板上に集積化すると共に前記保護回路で保護しきれな
い過電流（過電圧）が発生した際前記スイッチング素子
と基板上に形成された導電路とを接続するボンディング
ワイヤを溶断させ、前記整流回路から出力される出力電
源を遮断させることを特徴とする。(d) Means for Solving the Problems The present invention has been made in view of the above-mentioned problems, and includes a rectifier circuit connected to one commercial AC source, a switching element that short-circuits the output of the rectifier circuit, A rectifier power supply circuit including a drive circuit that turns on and off the switching element and a protection circuit that protects the switching element is integrated on the same substrate, and an overcurrent (overvoltage) that cannot be protected by the protection circuit is prevented. When this occurs, a bonding wire connecting the switching element and a conductive path formed on the substrate is fused and the output power output from the rectifier circuit is cut off.
（ホ〉作用
この様に本発明に依れば、同一絶縁金属基板上に商用交
流電源に接続される整流回路と、整流回路の出力を短絡
させるスイッチング素子と、スイッチング素子をオン・
オフさせる駆動回路と、スイッチング素子を保護する保
護回路とを形成することにより、シールド効果の高い基
板上に整流電源回路をコンパクトに実装することができ
、ワイヤ・レスで配線でき且つ配線の短縮化を行うこと
ができノイズの発生をおさえることができる。(E) Effect As described above, according to the present invention, the rectifier circuit connected to the commercial AC power supply, the switching element that short-circuits the output of the rectifier circuit, and the switching element that turns on and off are provided on the same insulated metal substrate.
By forming a drive circuit that turns off and a protection circuit that protects the switching element, the rectifier power supply circuit can be compactly mounted on a board with high shielding effect, allowing wireless wiring and shortening the wiring. It is possible to suppress the generation of noise.
また、保護回路で保護しきれない過電流（あるいはａ？
１ｌｔｌＥ）が発生した際、スイッチング素子と導電路
とを接続するポンディングワイヤを溶断させ、整流回路
からの出力電源を遮断させることにより、混成集積回路
を実装した電子機器のシステム全体の保護を行うことが
できる。Also, overcurrent that cannot be protected by the protection circuit (or a?
1ltlE) occurs, the entire system of an electronic device equipped with a hybrid integrated circuit is protected by melting the bonding wire that connects the switching element and the conductive path and cutting off the output power from the rectifier circuit. be able to.
（へ）実施例
以下第１図及び第２図に示した実施例に基づいて本発明
の詳細な説明する。(f) Examples The present invention will be described in detail below based on the examples shown in FIGS. 1 and 2.
本発明の混成集積回路は第１図に示す如く、同一絶縁金
属基板上に商用交流電源に接続される整流回路（１）と
、整流回路（１）の出力を短絡させるスイッチング素子
（２）とスイッチング素子（２）をオン・オフさせる駆
動回路（３）と、電流保護回路（４）と、温度保護回路
（５）とから成る整流電源回路が構成されている。As shown in FIG. 1, the hybrid integrated circuit of the present invention has a rectifier circuit (1) connected to a commercial AC power supply and a switching element (2) that short-circuits the output of the rectifier circuit (1) on the same insulated metal substrate. A rectifier power supply circuit is constructed of a drive circuit (3) that turns on and off the switching element (2), a current protection circuit (4), and a temperature protection circuit (5).
整流回路（１）は４つのダイオードＤ１〜Ｄ４でプノッ
ジ構成され、コイル（６）を介して交流電源（７）から
入力された交流源を直流に整流して負荷（８）に直流電
源を供給する。（９）は平滑用のコンデンサである。The rectifier circuit (1) is composed of four diodes D1 to D4, and rectifies the AC source input from the AC power source (7) through the coil (6) into DC to supply DC power to the load (8). do. (9) is a smoothing capacitor.
整流回路（１）の出力側には整流回路（１）の出力を短
絡させるスイッチング素子（２）が接続され、そのスイ
ッチング素子（２）にはオン・オフ制御するための駆動
回路（３〉が接続されている。また、駆動回路（３）に
はスイッチング素子（２）に過大な電流が流れたときに
スイッチング素子（２）を保護するための電流保護回路
（４）が接続されている。（動作は従来と略同様のため
省略する。）スイッチング素子（２）としては例えば前
段がＭＯＳ）−ランジスタで後段がバイポーラトランジ
スタで形成されているＩＧＢＴ素子が用いられるものと
する。A switching element (2) that short-circuits the output of the rectifier circuit (1) is connected to the output side of the rectifier circuit (1), and a drive circuit (3) for on/off control is connected to the switching element (2). Further, a current protection circuit (4) for protecting the switching element (2) when an excessive current flows through the switching element (2) is connected to the drive circuit (3). (The operation is substantially the same as the conventional one, so a description thereof will be omitted.) As the switching element (2), for example, an IGBT element is used, in which the front stage is a MOS transistor and the rear stage is a bipolar transistor.
本発明の特徴とするところは整流回路（１〉、駆動回路
（３）、電流保護回路（４）を構成する半導体素子をチ
ップ部品で絶縁金属基板（１１〉上に形成するところに
ある。絶縁金属基板（１１）としては例えば絶縁処理さ
れたアルミニウム基板が用いられる。The feature of the present invention is that the semiconductor elements constituting the rectifier circuit (1), drive circuit (3), and current protection circuit (4) are formed as chip components on an insulated metal substrate (11). As the metal substrate (11), for example, an insulated aluminum substrate is used.
そのアルミニウム基板上には第２図に示す如く、所望形
状の導体（１０）が形成されており、その導体（１０）
上には半導体チップ等のチップ部品及び印刷抵抗によっ
て上述した整流回路（１）、スイッチング素子（２）、
駆動回路〈３）、及び１流保護回路（４）が形成される
。これらの部品はチップ状であるために余分な外形ケー
ス、リード線等を必要とせず、非常に小型に実装でき、
且つ、ノイズの発生源となりやすい余分な配線を長くと
る必要がなくなるため、ノイズの少ない回路を形成する
ことが可能である。またスイッチング素子（２）をオン
・オフ制御する駆動回路（３）及び電流保護回路（４）
の回路構成は特に限定されるものではなく、任意に設計
することができる。As shown in FIG. 2, a conductor (10) of a desired shape is formed on the aluminum substrate, and the conductor (10)
On the top are the above-mentioned rectifier circuit (1), switching element (2),
A drive circuit (3) and a first-stream protection circuit (4) are formed. Since these parts are chip-shaped, they do not require extra external cases, lead wires, etc., and can be mounted very compactly.
In addition, since there is no need to provide long extra wiring that tends to be a source of noise, it is possible to form a circuit with less noise. Also, a drive circuit (3) and a current protection circuit (4) that control on/off of the switching element (2).
The circuit configuration is not particularly limited and can be designed arbitrarily.
本発明では基板上に電流保護回路の他に温度保護回路（
５）を形成するところにある。温度保護回路（５）は上
述した基板の温度上昇を検出し異常となった場合、スイ
ッチング素子のオン・オフ制御を停止させる。In the present invention, in addition to the current protection circuit, a temperature protection circuit (
5). The temperature protection circuit (5) detects the above-mentioned temperature rise of the substrate and stops the on/off control of the switching element when an abnormality occurs.
温度保護回路（５）は第３図に示す如く、抵抗Ｒ１＋Ｒ
ａｔ Ｒｓ、Ｒａ、Ｒｓ、ダイオードＤ及びフンパレー
タとによって構成される。第３図に示す如く、基準電圧
ｖ０を抵抗Ｒ１，Ｒ１で分圧し、コンパレータの基準レ
ベルとして中端子に入れる。ダイオードＤは温度センサ
ーであり、ダイオードＤのｖＦの温度変化（−２ｍＶ／
”Ｃ）を利用して第４図に示す如＜Ｔｃの温度を検出す
るべく基板上に配置さｈている。今、Ｔｃが温度保護レ
ベルより低いとき、フンパレータの出力（ＯＵＴ＞がＬ
ｏｗでＴ ｃ ＝Ｔ ｓ ａ （温度保護レベル）のと
きに、コンパレータの手入カー−人力となる様に抵抗Ｒ
１，Ｒｔ、Ｒｓ。The temperature protection circuit (5) has a resistor R1+R as shown in Figure 3.
It is composed of at Rs, Ra, Rs, a diode D, and a humpator. As shown in FIG. 3, the reference voltage v0 is divided by resistors R1 and R1 and inputted to the middle terminal as the reference level of the comparator. Diode D is a temperature sensor, and the temperature change in vF of diode D (-2mV/
It is placed on the board to detect the temperature of Tc as shown in Fig. 4 by using "C). Now, when Tc is lower than the temperature protection level, the output (OUT) of the humpator becomes L.
When T c = T s a (temperature protection level) at ow, the resistor R is
1, Rt, Rs.
Ｒ４，Ｒ−、ダイオードＤを設定する。この状態でＴｃ
が上昇してＴｃ≧Ｔ’ｓｏになるとコンパレータの出力
はＨｉｇｈとなり、検出出力としてコントロール回路や
駆動回路に導かれ、主回路がＴｓｎ以上の温度になるの
を防止し、混成集積回路基板（絶縁金属基板）上に形成
された整流電源回路を熱破壊から防止するものである。Set R4, R-, and diode D. In this state Tc
When Tc≧T'so increases, the output of the comparator becomes High, which is led to the control circuit and drive circuit as a detection output, preventing the main circuit from reaching a temperature higher than Tsn, and preventing the hybrid integrated circuit board (insulated This protects the rectifier power supply circuit formed on the metal substrate from thermal damage.
上述した温度保護回路（５）は一実施例であり、その回
路構成は駆動回路（３）及び電流保護回路（４）と同様
に限定されるものではない。The above-mentioned temperature protection circuit (5) is just one example, and its circuit configuration is not limited like the drive circuit (3) and current protection circuit (4).
上述した様に整流電源回路は全て同一基板（１１〉上に
形成された導体（１０）上にチップ状の部品で形成され
、近傍の導体（１０）と接続が必要な素子はボンディン
グワイヤで接続きれている。As mentioned above, all of the rectifier power supply circuits are formed using chip-shaped parts on the conductor (10) formed on the same substrate (11), and elements that need to be connected to the nearby conductor (10) are connected with bonding wires. It's broken.
更に、本発明では保護回路（４）（５）で保護できない
過電流あるいは過電圧が発生した際にも混成集積回路自
体で保護しシステム全体の安全を図るものである。即ち
、本実施例の混成集積回路内には電流保護回路（４）及
び温度保護回路（５〉の他に第３の保護システムを備え
ているものである。更に具体的に述べると、電流回路の
出力を所望に短絡させるスイッチング素子（２）と近傍
の導体（１１）を接続するボンディングワイヤ（１２）
の径を保護回路（４＞（５）で保護できない過電流ある
いは過電圧が発生したときに溶断する様な径に設定して
おく。Furthermore, in the present invention, even when an overcurrent or overvoltage that cannot be protected by the protection circuits (4) and (5) occurs, the hybrid integrated circuit itself protects it, thereby ensuring the safety of the entire system. That is, the hybrid integrated circuit of this embodiment includes a third protection system in addition to the current protection circuit (4) and the temperature protection circuit (5). A bonding wire (12) that connects a switching element (2) that short-circuits the output as desired and a nearby conductor (11).
The diameter of the wire is set to a diameter that will cause the wire to melt when an overcurrent or overvoltage that cannot be protected by the protection circuit (4>(5)) occurs.
ボンディングワイヤ（１２）としては金線及びアルミニ
ウム線が用いられ、その径の大きさは過電流あるいは過
電圧を設定する大きさによって異なるが例えば０ 、１
ｍｍ〜０ 、５ ｍｍの範囲であれば２０Ａ〜１００
Ａの過電流で第２図に示す如く、ボンディングワイヤ（
１２）を溶断させることができる。A gold wire or an aluminum wire is used as the bonding wire (12), and its diameter varies depending on the setting of overcurrent or overvoltage.
20A to 100 in the range of mm to 0,5 mm
As shown in Figure 2, with an overcurrent of A, the bonding wire (
12) can be fused.
ここで保護回路（４）（５）で保護できない過電流ある
いは過電圧が発生する点について述べる。Here, we will discuss the occurrence of overcurrent or overvoltage that cannot be protected by protection circuits (4) and (5).
基板（１１）上に形成した周辺回路の破壊あるいは外部
ノイス等による予期できない理由による誤動作で保護回
路が正常な動作を行わない場合があり、過電流あるいは
過電圧が発生しても正常では保護できるものが保護でき
ず、スイッチング素子（２）が破壊され導通状態となり
整流回路の出力が導通され大電流が流れる。この結果、
混成集積回路を実装した電子機器の例えば、ＡＣコード
等の電流路が発熱し火災等の二次災゛害を誘発する大き
な問題となっていた。The protection circuit may not operate normally due to destruction of the peripheral circuit formed on the board (11) or malfunction due to unpredictable reasons such as external noise, and the protection circuit can normally be protected even if overcurrent or overvoltage occurs. cannot be protected, the switching element (2) is destroyed and becomes conductive, and the output of the rectifier circuit becomes conductive, causing a large current to flow. As a result,
For example, current paths such as AC cords in electronic devices equipped with hybrid integrated circuits generate heat, which has become a serious problem, inducing secondary disasters such as fires.
しかし、本発明では上述した様に保護回路（４）（５）
で保護できない過電流あるいは過電圧をスイッチング素
子（２）と導体（１０）とを接続するボンディングワイ
ヤ（１２）を積極的に溶断させてシステム全体を保護す
るものである。However, in the present invention, as described above, the protection circuits (4) and (5)
The entire system is protected by actively blowing out the bonding wire (12) that connects the switching element (2) and the conductor (10) against overcurrent or overvoltage that cannot be protected by the overcurrent or overvoltage.
斯る本発明に依れば、同一絶縁金属基板上にチップ部品
により、整流回路、整流回路の出力を短絡させるスイッ
チングトランジスタ、スイッチングトランジスタを制御
する駆動回路及び電流保護回路を形成することにより、
シールド効果の高い金属基板上にコンパクトに実装する
ことができ、且つ、配線の短縮化（ワイヤレス配線）が
行えシールド性の優れたノイズの非常に少ない整流′ｗ
、；＊回路用の混成集積回路を提供することができる。According to the present invention, a rectifier circuit, a switching transistor that short-circuits the output of the rectifier circuit, a drive circuit that controls the switching transistor, and a current protection circuit are formed using chip components on the same insulated metal substrate.
It can be compactly mounted on a metal substrate with a high shielding effect, and the wiring can be shortened (wireless wiring). It has excellent shielding properties and very low noise rectification.
A hybrid integrated circuit for a ;* circuit can be provided.
また、本発明では同一基板上に温度保護回路が形成され
ているため、回路の発熱によって混成集積回路基板の温
度が異常に上昇することを防止し回路破壊することはな
い。Further, in the present invention, since the temperature protection circuit is formed on the same substrate, the temperature of the hybrid integrated circuit board is prevented from rising abnormally due to heat generated by the circuit, and the circuit is not destroyed.
更に本発明ではスイッチング素子と導体とを接続するボ
ンディングワイヤを保護回路で保護できない過電流が発
生した場合に溶断される様に設定されているために混成
集積回路を実装した電子機器全体のシステムの保護を行
うことができる。Furthermore, in the present invention, the bonding wire that connects the switching element and the conductor is set to be blown out when an overcurrent that cannot be protected by a protection circuit occurs. protection can be provided.
（ト）発明の効果
以上に詳述した如く、同一絶縁金属基板上にチップ部品
により、整流回路、整流回路の出力を短絡させるスイッ
チングトランジスタ、スイッチングトランジスタを制御
する駆動回路及び電流保護回路を形成することにより、
シールド効果の高い金属基板上にコンパクトに実装する
ことができ、且つ、配線の短縮化（ワイヤレス配線）が
行えシールド性の優れたノイズの非常に少ない整流電源
回路用の混成集積回路を提供することができる。(g) Effects of the invention As detailed above, a rectifier circuit, a switching transistor that short-circuits the output of the rectifier circuit, a drive circuit that controls the switching transistor, and a current protection circuit are formed using chip components on the same insulated metal substrate. By this,
To provide a hybrid integrated circuit for a rectifying power supply circuit that can be compactly mounted on a metal substrate with high shielding effect, can shorten wiring (wireless wiring), has excellent shielding properties, and has very little noise. I can do it.
また、本発明では同一基板上に温度保護回路が形成され
ているため、回路の発熱によって混成集積回路基板の温
度が異常に上昇することを防止し回路破壊することはな
い混成集積回路を提供することができる。Further, in the present invention, since the temperature protection circuit is formed on the same substrate, it is possible to prevent the temperature of the hybrid integrated circuit board from abnormally rising due to heat generation of the circuit, and to provide a hybrid integrated circuit that does not cause circuit breakdown. be able to.
更に本発明では同一基板上に温度保護用、電流保護用の
二系統の保護回路が形成されているため、高信頼性の整
流電源回路用の混成集積回路を提供することができる。Further, in the present invention, since two protection circuits for temperature protection and current protection are formed on the same substrate, it is possible to provide a highly reliable hybrid integrated circuit for a rectifying power supply circuit.
更に本発明では保護回路で保護できない過電流あるいは
過電圧が発生した場合、スイッチング素子と導体とを接
続するボンディングワイヤが溶断されるシステムとなっ
ているため、保護回路で保護できない過電流あるいは過
電圧が発生したとしても混成集積回路自体の破壊で混成
集積回路を実装した電子機器システム全体の破壊を防止
することができ極めて安全な混成集積回路を提供するこ
とができる。Furthermore, in the present invention, when an overcurrent or overvoltage that cannot be protected by the protection circuit occurs, the bonding wire that connects the switching element and the conductor is fused, so an overcurrent or overvoltage that cannot be protected by the protection circuit occurs. Even if the hybrid integrated circuit itself is destroyed, the entire electronic device system in which the hybrid integrated circuit is mounted can be prevented from being destroyed, and an extremely safe hybrid integrated circuit can be provided.
第１図は本発明の混成集積回路に集積化された整流電源
回路を示す回路図、第２図は第１図の整流電源回路を基
板上に実装した要部断面図、第３図は本実施例の温度保
護回路を示す回路図、第４図は第３図の保護レベルを示
す図、第５図及び第６図は従来例を示す図である。
（１）・・・整流回路、 （２）・・・スイッチング素
子、（３〉・・・駆動回路、 （４）・・・電流保護回
路、 （５）・・・温度保護回路、 （１０）・・・導
体、 （１１）・・・基板、（１２）・・・ボンディン
グワイヤ。Fig. 1 is a circuit diagram showing a rectifying power supply circuit integrated into the hybrid integrated circuit of the present invention, Fig. 2 is a sectional view of the main part of the rectifying power supply circuit of Fig. FIG. 4 is a circuit diagram showing the temperature protection circuit of the embodiment, FIG. 4 is a diagram showing the protection level of FIG. 3, and FIGS. 5 and 6 are diagrams showing a conventional example. (1)... Rectifier circuit, (2)... Switching element, (3>... Drive circuit, (4)... Current protection circuit, (5)... Temperature protection circuit, (10) ...Conductor, (11)...Substrate, (12)...Bonding wire.
Claims (4)
子と 前記スイッチング素子に所定の入力信号を供給しオン・
オフさせる駆動回路と 前記スイッチング素子を保護する保護回路とを備えた整
流電源回路が所望の導電路が形成された集積回路基板上
に集積化された混成集積回路において、 前記保護回路で保護しきれない過電流（あるいは過電圧
）が発生した際、前記スイッチング素子と近傍の前記導
電路とを接続しているボンディングワイヤを溶断させ、
前記整流回路から出力される電源を遮断することを特徴
とする混成集積回路。(1) A switching element that short-circuits at least a rectifier circuit connected to a commercial AC power source and the output of the rectifier circuit as desired, and a switching element that supplies a predetermined input signal to the switching element and
In a hybrid integrated circuit in which a rectifying power supply circuit including a drive circuit to turn off and a protection circuit to protect the switching element is integrated on an integrated circuit board on which a desired conductive path is formed, the switching element is not completely protected by the protection circuit. When an overcurrent (or overvoltage) occurs, a bonding wire connecting the switching element and the nearby conductive path is fused,
A hybrid integrated circuit characterized in that the power output from the rectifier circuit is cut off.
とを特徴とする請求項１記載の混成集積回路。(2) The hybrid integrated circuit according to claim 1, wherein the switching element uses an IGBT element.
続するボンディングワイヤは金線あるいはＡｌ線である
ことを特徴とする請求項１記載の混成集積回路。(3) The hybrid integrated circuit according to claim 1, wherein the bonding wire connecting the switching element and the nearby conductive path is a gold wire or an Al wire.
を用いたことを特徴とする請求項１記載の混成集積回路
。(4) The hybrid integrated circuit according to claim 1, wherein a metal substrate whose surface is insulated is used as the integrated circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1138613A JP2730975B2 (en) | 1989-05-31 | 1989-05-31 | Hybrid integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1138613A JP2730975B2 (en) | 1989-05-31 | 1989-05-31 | Hybrid integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH033355A true JPH033355A (en) | 1991-01-09 |
| JP2730975B2 JP2730975B2 (en) | 1998-03-25 |
Family
ID=15226178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1138613A Expired - Lifetime JP2730975B2 (en) | 1989-05-31 | 1989-05-31 | Hybrid integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2730975B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007317970A (en) * | 2006-05-26 | 2007-12-06 | Furukawa Electric Co Ltd:The | Semiconductor device with fuse |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308361A (en) * | 1987-06-10 | 1988-12-15 | Mitsubishi Electric Corp | Structure of electrode connection section in power semiconductor device |
-
1989
- 1989-05-31 JP JP1138613A patent/JP2730975B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308361A (en) * | 1987-06-10 | 1988-12-15 | Mitsubishi Electric Corp | Structure of electrode connection section in power semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007317970A (en) * | 2006-05-26 | 2007-12-06 | Furukawa Electric Co Ltd:The | Semiconductor device with fuse |
| JP4593518B2 (en) * | 2006-05-26 | 2010-12-08 | 古河電気工業株式会社 | Semiconductor device with fuse |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2730975B2 (en) | 1998-03-25 |
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