JPH033197A - Storage matrix - Google Patents

Abstract

PURPOSE:To compose a storage device with high density by connecting a magnetic sensitive diode to show a magnetic sensitive characteristic to be asynmetrical to magnetic fields to be different in a specific direction between a word line and a digit line to compose a read conductive write. CONSTITUTION:A current flows through a magnetic sensitive diode 4 having the magnetic sensitive characteristic to be asynmetrical to the magnetic fields to be different in 180 deg. direction connected to a single word line 2 made into a current flowing condition to a digit line 3. The current to flow to the diode 4 is decided by the condition of the magnetization of a storage medium 5, and by comparing the current to flow to the digit line 3 with a reference current, the read is executed. In such a way, by incorporating a storage matrix composed of the magnetic storage medium and magnetic sensitive doide to the storage device, the storage device can be made highly dense.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a matrix part of a static storage device, and to a storage matrix constituted by a magnetic storage medium and a magnetically sensitive diode.

2. Description of the Related Art A rewritable nonvolatile storage device can be constructed by performing magnetic writing using a current matching method on a storage medium made of a semi-hard magnetic material and reading the written magnetic memory using static means.

US Pat. No. 3,180,863 is one of the conventional magnetic storage devices in which the written magnetic memory is statically read by a magnetoresistive element.

U.S. Pat. No. 3,160,883 requires one multiplexer per storage cell, which is a disadvantageous structure for constructing large-scale storage devices.

In order to reduce the number of multiplexers, a type of device in which a plurality of magnetoresistive elements constituting a memory cell are connected in series has also been proposed. US Pat. No. 4,455.626 is an example in which a plurality of magnetoresistive elements are connected in series.

Naturally, if they are connected in series, the magnitude of the readout signal will be smaller, making it more susceptible to noise.

OBJECTS OF THE INVENTION It is an object of the present invention to provide a storage matrix for a magnetically based non-volatile memory capable of constructing a high-density storage device.

Another object of the present invention is to provide a memory matrix for a memory device in which the number of elements constituting a memory cell is small, so that it is easy to construct a high-density memory device.

Configuration of the Present Invention The memory matrix of the present invention includes a plurality of memory cells (1) arranged in an array, a plurality of read conductive lines connecting the plurality of memory cells (1), and magnetic writing using a current matching method. It is composed of multiple write conductive lines.

The reading conductive line is made up of a plurality of conductive lines, and the plurality of conductive lines are arranged in an intersecting manner to form two groups of read conductive lines. In the following description, the two groups of read conductive lines are defined as word lines (
The conductive wire groups for reading, denoted as 2) and digit II (3), are insulated except for the connection points.

When the magnetically sensitive diodes constituting the storage matrix of the present invention have asymmetric magnetically sensitive characteristics to different magnetic fields in 180 degree directions, the storage cell (1) includes a storage medium (5) made of a semi-hard magnetic material; It consists of a magnetically sensitive diode (4) for reading the magnetization recorded on this storage medium (5).

When the magnetically sensitive diodes constituting the storage matrix of the present invention do not have asymmetric magnetically sensitive characteristics to magnetic fields different in 180 degree directions, the storage cell (1) includes a storage medium (5) made of a semi-hard magnetic material; a magnetically sensitive diode (4) for reading the magnetization recorded on this storage medium (5);
and bias magnetic field generating means (8).

The magnetically sensitive diode (4) and the storage medium (5) are magnetically coupled.

One word line (2) and one digit line (3) intersect at a - point. One magnetically sensitive diode (4) is connected between one word line (2) and one digit line (3) which are arranged to cross each other.

The write conductive line is composed of a plurality of conductive lines, and the plurality of conductive lines are arranged in an intersecting manner. The write conductive line connects the storage medium (5
), and when a write current is passed through the write conductive line, writing is performed on the storage medium (5) using a current matching method.

The write conductive line is electrically insulated except for the connection points.

If the shape of the storage medium (5) is similar to a closed magnetic circuit, it is advantageous in terms of magnetic flux leakage and magnetization reversal. That is, the shape of the storage medium (5) is a closed magnetic circuit that surrounds the two writing conductive wires.

Magnetically sensitive diode (4) in the gap part of the closed magnetic circuit
It is a structure that places

However, although this is disadvantageous in terms of magnetic flux leakage, it is also possible to make the storage medium (5) into a planar shape made of semi-hard magnetic material. That is, it is not an essential requirement that the storage medium have a closed magnetic circuit configuration.

Writing to the storage medium (5) is performed using a current matching method. Writing to the storage medium (5) using the current matching method can be carried out with the minimum configuration of two groups of conductive lines arranged in an intersecting manner.

The memory cells constituting the memory matrix of the present invention may be composed of a single magnetically sensitive diode (4) and a single storage medium (5), or may be composed of a pair of magnetically sensitive diodes (4) and a pair of memory cells. It may be composed of a medium (5).

When a memory cell is composed of a pair of two magnetically sensitive diodes (4), when one magnetically sensitive diode (4) is in a high resistance state due to magnetic writing, the other magnetically sensitive diode (4) The direction of magnetic writing is configured such that the magnetic field is in a low resistance state.

The magnetically sensitive diodes (4) include those that have symmetrical characteristics and those that have asymmetrical characteristics with respect to magnetic fields that differ in direction by 180 degrees, and one that has a memory matrix (11) of the present invention.
Although any type of diode can be used, the memory cell structure can be simplified by using a magnetically sensitive diode (4) having an asymmetric magnetic field direction-resistance characteristic with respect to a magnetic field with a 180 degree difference in direction.

When using a magnetically sensitive diode (4) having a magnetic field direction-resistance characteristic that is symmetrical with respect to a magnetic field with a 180 degree difference in direction, the memory cell (16) constituting the memory matrix of the present invention is further provided with a bias magnetic field. The generator includes a generating means (8).

The magnetic flux applied to the magnetically sensitive diode (4) is the sum of the magnetic flux of the storage medium (5) and the magnetic flux from the bias magnetic field generating means (8). By applying a bias magnetic field, the magnetic field applied to the magnetically sensitive diode (4) becomes asymmetrical.

The direction of the bias magnetic field may be any direction other than the direction perpendicular to the direction of the magnetic flux of the storage medium (5).

The above is the configuration of the storage matrix of the present invention.

Operation The storage matrix of the present invention is incorporated into a storage device and operates as part of the storage device.

The storage device consists of a writing device part and a reading device part, and the writing device has a storage matrix (11
) is a device for passing a write current through the write conductive line. Magnetic writing is performed on the storage medium (5) constituting the storage cell using a current matching method.

Various configurations of the reading device are possible. The output circuit part of the reading device can be constituted by a current comparator (13).

Furthermore, the output circuit can also be configured with a voltage comparator and a resistor.

The following is an example of a configuration in which the current flowing through the digit line (3) of the memory matrix (11) is compared by a current comparator (13) to read the memory.

The reading device by the current comparator (13) is connected to the switch (9
) group, a storage matrix (11), and an output circuit. The output circuit is composed of a plurality of current comparators (13). The switch group (9) is composed of a plurality of switches, and the switch (9) is connected between the power line 1 (10) and the word M (2) of the storage matrix (11).

The switch group (9) is a device for selecting one of the word lines (2) of the storage matrix (11) and connecting/disconnecting it to/from the power source (10).

The digit line (3) of the storage matrix (11) is connected to the input terminal of the current comparator (13) of the output circuit.

In the case of reading a storage matrix (11) whose storage cells consist of a single magnetically sensitive diode (4), a digit line (3) is connected to one of the input terminals of the current comparator (13), and the current comparator The other input terminal of (13) is connected to the terminal of a reference current source (12) that serves as a reference for comparison.

For reading a storage matrix whose storage cells consist of pairs of magnetically sensitive diodes, the two input terminals of the current comparator are connected to paired digit lines connected to the pairs of magnetically sensitive diodes.

The output of the current comparator becomes the memory read output.

The storage/reader is configured as described above.

When one of the switches (9) is selected by the address decoder and becomes conductive, the switch (9) becomes conductive.
) is energized. (The address decoder is not shown.) A single energized word line (2) has a plurality of magnetically sensitive diodes (
4) is connected. One digit line (3) is connected to each of the magnetically sensitive diodes (4). The magnetically sensitive diode (4) is connected in the forward direction with respect to the power supply polarity.

Current flows through the digit 16 (3) through the magnetically sensitive diode (4) connected to the single energized word line (2). The current comparator (13) is connected to the digit &1l (3) as described above, and the currents flowing through the digit line (3) are compared. The current flowing through the magnetically sensitive diode (4) is determined by the state of magnetization of the storage medium (5). Reading is performed like this.

When reading a storage matrix (11) whose storage cells consist of a single magnetically sensitive diode (4), the digit line (
3) The current flowing through is compared with a reference current.

In reading a storage matrix whose storage cells are composed of pairs of magnetically sensitive diodes, two currents flowing through the pairs of magnetically sensitive diodes and into the digit line are compared by a current comparator.

The magnetically sensitive diodes (4) connected to the word lines (2) other than the one word M (2) that is energized do not participate in reading, and the magnetically sensitive diodes (4) prevent the current from flowing around. . therefore.

The magnetically sensitive diode (4) involved in reading is connected to the word line (9) connected to the conducting switch (9).
2) - only a column of magnetically sensitive diodes (4).

Reading is performed as described above.

Reading of the storage matrix is performed using the current comparator (13) described above.
) Various configurations are possible in addition to the reading method.

It is also possible to construct a reading device in such a way that the magnetic or gas-sensitive diode (4) and the resistor provided in the output circuit constitute a kind of flip-flop.

Connect digit M (3) to the resistor installed in the output circuit,
It is also possible to convert the current flowing through the digit line (3) into voltage and read the memory using a voltage comparator.

Embodiment (a) Advantageously, the storage matrix of the invention is constructed entirely as a film on a support substrate. However, it is not an essential requirement of the present invention that it be composed of a thin film.

The present invention can also be made by assembling individual elements.

It can also be constructed by etching a thin film on a support substrate.

(b) Several types of magnetically sensitive diodes are known. Either can be used as a magnetically sensitive diode in the storage matrix of the present invention.

A typical magnetically sensitive diode has a PIN structure.

A magnetically sensitive diode with a PIN structure has an SMD (
Product name) is known.

SMDs have high magnetic sensitivity. Furthermore, the positional relationship between the direction in which the magnetic field of the storage medium is applied and the recombination region formed on the surface of the region (1) is advantageous.

Furthermore, since it has asymmetrical current characteristics with respect to a magnetic field with a 180 degree difference in direction, the memory matrix of the present invention is easy to configure.

The fractional carrier recombination region (15) of the SMD can be finely damaged by accelerating an inert element such as Ar ions in an electric field and irradiating it. This is a so-called ion bomber method.

Furthermore, magnetically sensitive diodes having a PIN structure and having no intentional recombination region are known.

(Melingailis, 1982) (seri
nsky, 19B8) A magnetically sensitive diode with a PIN structure that does not have an intentional recombination region in the
Detectable difference in 80 degree direction (patent announcement 1972-
40460, etc.).

The I region of a magnetically sensitive diode with a PIN structure is set to P or N.
There are also structures in which the type semiconductor device is replaced.

It is a magnetically sensitive diode with a P″PN″ P″NN” structure.

Furthermore, a magnetically sensitive diode having a ferromagnetic semiconductor material and a ferromagnetic insulating material (Patent Publication 1986-27 '509)
) can also constitute the storage matrix of the present invention.

Furthermore, the storage matrix of the present invention can also be configured by a magnetically sensitive element having an NPN structure or a PNP structure (such as Patent Publication No. 52-36829).

If the magnetically sensitive diode does not have rectifying capability, a diode having rectifying capability is connected in series with the magnetically sensitive diode.

When the magnetically sensitive diode is of a type that cannot distinguish between different magnetic fields in 180 degree directions, a bias magnetic field is applied to the magnetically sensitive diode, and the magnetic flux from the storage medium and the magnetic flux from the bias magnetic field are added together.

The bias magnetic field and the magnetic flux from the storage medium are parallel or antiparallel. When they are parallel, they add; when they are antiparallel, they cancel each other out.

(c) The PIN diode of the present invention can also be constructed of a thin film. In that case, the PIN diodes are isolated by a known method.

Known isolation techniques include reverse-biased PN
These include methods of separating and insulating devices with junctions, methods of removing semiconductor between elements by etching, and methods of separating with high-resistance semiconductors.

(d) It is advantageous if the storage medium made of semi-hard magnetic material has a shape resembling a closed magnetic circuit that wraps around the writing conductive wire.

However, it is not an essential requirement of the present invention that the storage medium has a shape similar to a closed magnetic circuit.

(e) If the storage capacity is large, it is advantageous to output the storage output via an output selector as usual.

(f) It is desirable to shield components such as the memory matrix from the atmosphere with a protective film.

[Brief explanation of drawings]

FIG. 1 shows a storage matrix of the present invention having magnetically sensitive diodes capable of distinguishing between different magnetic fields in 180 degree directions. FIG. 2 shows a storage matrix of the invention in which the magnetic fields applied to the magnetically sensitive diodes are both from the storage medium (5) and from the bias field generating means (8). FIG. 3 is an example of a storage device configured by the storage matrix of the present invention. Memory reading is done using a current comparator (
13). FIG. 4 illustrates a method of creating a recombination region in one region of an 8MD type magnetically sensitive diode using an ion beam (14). FIG. 5 shows an example of the positional relationship between a magnetically sensitive diode and a storage medium (5) made of a semi-hard magnetic material. When the direction of the magnetic field is opposite, the minority carriers are moved away from or closer to the recombination region created on the surface of the diode. 1. Memory cell 2. Word line 3. Digit line 4, magnetically sensitive diode 5. Storage medium 6, writing conductive wire 7
．． Write conductive line 8, bias magnetic field generating means 9. Switch group 10, power supply 11, storage matrix 12. Reference current source 13, current comparator 14. Ion beam 15, recombination region 16.
Memory cell t Mouthless prisoner Akimiko

Claims (2)

[Claims] (1) A plurality of recording conductive lines arranged in an intersecting manner and a plurality of storage media made of an array of semi-hard magnetic materials are provided, and the writing conductive lines arranged in an intersecting manner are magnetically coupled to the storage medium. and a plurality of read conductive lines arranged intersectingly, each consisting of a plurality of word lines and a plurality of digit lines, and a plurality of magnetically sensitive diodes arranged in an array, between one of the word lines and one of the digit lines. is an element in which one of the magnetically sensitive diodes is connected, the magnetically sensitive diode is an element that exhibits asymmetric magnetically sensitive characteristics to different magnetic fields in 180 degree directions, and all the magnetically sensitive diodes are connected in the same direction;
A storage matrix in which the magnetically sensitive diode and the storage medium are magnetically coupled. (2) A plurality of recording conductive lines arranged in an intersecting manner and a plurality of storage media made of an array of semi-hard magnetic materials are provided, and the writing conductive lines arranged in an intersecting manner are magnetically coupled to the storage medium. It has a plurality of read conductive lines arranged in an intersecting manner consisting of a plurality of word lines and a plurality of digit lines, and a plurality of magnetically sensitive diodes arranged in an array. One magnetically sensitive diode is connected between them, and the magnetically sensitive diode is an element that exhibits magnetically sensitive characteristics that are symmetrical to different magnetic fields in 180 degree directions, and all the magnetically sensitive diodes are connected in the same direction. . A storage matrix having a structure in which the magnetic flux of the storage medium and the magnetic flux from a bias magnetic field generating means are applied to the magnetically sensitive diode. 3) A storage cell is composed of a storage medium made of a semi-hard magnetic material paired with a pair of magnetically sensitive diodes, and magnetic writing is performed on the storage medium so that the resistance value of one of the magnetically sensitive diodes becomes a high resistance state. 2. The storage matrix according to claim 1 or 2, wherein the storage matrix has a structure in which magnetic writing is performed on the other storage medium so that the resistance value of the other magnetically sensitive diode becomes a low resistance state when