JPH0330320A - Load lock mechanism of gas phase chemical reaction forming device - Google Patents

Abstract

PURPOSE:To avoid generation of particles and the like due to air oxidation by adopting a three-chamber structure, i.e. each front, intermediate, and reaction chamber and avoiding air from entering into the reaction chamber after allowing the intermediate chamber always to be kept at a high vacuum. CONSTITUTION:A three-chamber structure is adopted so that an intermediate chamber 32 is formed between a front chamber that is constructed to perform the attaching and detaching of a substrate 36 and a reactive formation chamber 34 that is constructed to form a thin film on the surface of the substrate 36. Even though an atmosphere in the front chamber is released so as to attach and detach the substrate 36, the intermediate chamber 32 functions as a buffer chamber which makes the chamber 34 air-tight so that its chamber 34 is completely separated from the atmosphere side. Then, the intermediate chamber 32 is always kept at a high vacuum to avoid air from being mixed into the reaction chamber 34. Contamination on the surface of the substrate resulting from particles and the like generated by a mechanical drive part is suppressed to a minimum.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas phase chemical reaction production (CVD) apparatus, and more specifically, to a gas-phase chemical reaction production (CVD) apparatus, and more specifically, to a gas-phase chemical reaction production (CVD) apparatus for maintaining an airtight state inside a reaction production chamber in such an apparatus. It's about the side.

[Conventional technology]

Vertical low-pressure gas phase chemical reaction generation (LPCVD) equipment is known as a gas phase chemical reaction generation equipment, and this equipment is currently one of the most important technologies in the semiconductor manufacturing process. . A typical structural example of this device is shown in FIG.

That is, the reaction chamber 2A is an internal space of a quartz tube 2 surrounded by a peripheral heater 1, and this quartz tube 2 is supported by a stainless steel manifold 6 via an O-ring 5A for vacuum sealing. Further, this manifold 6 is fixed to a stainless steel support plate 9 via a seal 5B. The semiconductor substrate 3 is loaded onto a quartz carrier 4, and the quartz carrier 4 is supported by a seal plate 10 made of stainless steel. A vertically movable support section 11 is directly connected to the seal plate io, and is moved vertically by a vertically movable mechanism 11'. When the seal plate 10 moves to the upper end, a vacuum seal is formed with the support plate 9 by the seal 5C.

A vacuum chamber is defined by a quartz tube 2, a manifold 6, and a seal plate 10, and the inside of this vacuum chamber is evacuated from a vacuum exhaust lower by a vacuum exhaust system 7'. The pressure is 0.
The pressure is maintained at about 5 Torr. The reaction gas is introduced from the gas inlet 8, and the substrate 3 is heated by the outer peripheral heater 1 in this reaction gas atmosphere, thereby causing a thermochemical reaction and forming various thin films on the surface of the substrate 3.

In addition, in the past, the structure of the double front method in which 1. quartz tubes are doubled is also known, but essentially the single tube type of this example and the reaction generation are the same, so we will discuss it here. I won't mention it.

In a vertical LPCVD apparatus with such a structure, when inserting a quartz carrier loaded with a silicon substrate, etc. into the reaction chamber, or when taking out a quartz carrier from the reaction chamber after the process is completed, the inside of the reaction chamber is once brought to atmospheric pressure. need to return. If the quartz carrier is not inserted or removed after that, there is a risk that the substrate, which is at high temperature, will be exposed to the atmosphere (air) and that air will also enter the reaction chamber. As a result, the following problems arise. That is, when the substrate is taken out, the surface of the substrate, etc. that has been heated to a high temperature is oxidized by oxygen and moisture in the air. Further, reaction products adhering to the inner wall of the quartz tube in the reaction chamber are similarly oxidized, causing generation of particles. Furthermore, even when the substrate and quartz carrier are placed in the reaction chamber, residual air inside the reaction chamber causes
The substrate surface is oxidized before processing.

In order to solve these problems, a two-chamber type load lock mechanism having a front chamber in addition to the reaction chamber has already been proposed, and a typical structural example thereof is shown in FIG. In the figure, the shape of the reaction chamber 21 surrounded by 2 m of quartz tubes is the same as the example shown in Figure 1 above, but in this case, a gate valve 22 is provided directly below the manifold 6#. A vacuum seal 23 is located below the gate valve 22.
A vacuum chamber 24 for the front chamber is installed through the front chamber, and the inside of this vacuum chamber 24 is a front chamber 24'.
' is designed to be evacuated from a vacuum exhaust port 25 by a vacuum exhaust system 25'.

In this way, in this example, the reaction chamber 21 and the front chamber 24' can be shut off by the gate valve 22. Therefore, the insertion and removal of the board is performed by the vertical movement mechanism 26.
, the quartz carrier 4# is lowered and moved to the lower position 27 shown by the broken line in the figure, and then the gate valve 2
2 to seal the reaction chamber, and then the front chamber 24' is once returned to atmospheric pressure and the front chamber door 28 is opened.

On the other hand, in order to accommodate the quartz carrier 4# with the substrate mounted thereon in the reaction chamber 21, the front chamber door 2 is closed and the front chamber 24' is evacuated to reach a sufficient vacuum pressure inside the front chamber 24'. After that, the gate valve 22 is opened and the seal plate 10# is raised by the vertical movator tI26.

The problems with this two-chamber method load lock structure are as follows.

(Problems to be Solved by the Invention) However, even in such a two-chamber type load lock mechanism, the following problems still remain.

■ When loading or unloading a board, the pressure in the front chamber must be returned to atmospheric pressure, so even if the vacuum is drawn again after mounting the board, it is possible to avoid air remaining in the front chamber. do not have. That is, for example, if the average number of molecules existing in air is 2.68
Even if a high vacuum state of about 0-h is reached, the io”
Air molecules of the order of 1/C remain in the front chamber, and oxidation of the substrate surface, etc., due to this is unavoidable.

■ The vertical movement mechanism is installed inside the front chamber, so
Metal contaminants, particles, etc. are generated from this mechanical drive unit and adhere to the substrate surface.

The problem of this invention is to focus on such conventional problems,
The object of the present invention is to realize a load lock mechanism for a gas phase chemical reaction generating device that can avoid as much as possible the mixing and remaining of air, and can also avoid as much as possible the pollution and generation of particles caused by mechanical drive parts.

(Means for Solving the Problems) In order to achieve the above-mentioned problems, the gas phase chemical reaction generation device of the present invention includes a front chamber for loading and unloading the substrate, and a chemical reaction generation process on the surface of the substrate. A three-chamber configuration is adopted in which an intermediate chamber is formed between the reaction generation chamber for forming a thin film using a 3-chamber structure, and this intermediate chamber is used when the front chamber is opened to the atmosphere for loading and unloading the substrate. The reaction production chamber is also designed to function as a buffer chamber that is completely separated from the atmosphere and is airtight.

Furthermore, in the present invention, a structure is adopted in which the members constituting the transport means for transporting the substrate between the front chamber and the reaction generation chamber are arranged as far as possible outside the intermediate chamber, thereby making it possible to configure such transport means. This is to prevent particles generated from each member being attached to the substrate surface.

That is, the load-lock mechanism of the gas-phase chemical reaction generating apparatus according to the present invention includes an opening and closing section for loading and unloading the substrate, and a front chamber that becomes substantially airtight when the opening and closing section is closed; a substantially airtight reaction generation chamber for forming a thin film on the surface of the front chamber, a front chamber side communication port and a reaction generation chamber side communication port communicating with the front chamber and the reaction generation chamber, respectively, and these communication ports. a substantially airtight intermediate chamber equipped with a sealing means for sealing the front chamber, and the substrate placed into the front chamber through the opening/closing part is transported through the intermediate chamber into the reaction generation chamber; The apparatus is characterized by comprising a substrate transport means for returning the substrate processed in the reaction generation chamber to the front chamber through the intermediate chamber.

Further, in the present invention, the above-mentioned substrate conveyance means includes a substrate mounting section for mounting the substrate, and a substrate mounting section that reciprocates between the front chamber and the intermediate chamber through the front chamber side communication port, and a first drive section that reciprocates the mounting section between the reaction generation chamber and the intermediate chamber through the reaction generation chamber side communication port; and a first drive section that moves the mounting section from the front chamber side communication port into the intermediate chamber. The moved substrate mounting portion is moved to the side of the reaction generation chamber communication port, and the substrate mounting portion that has been moved from the reaction generation chamber side communication port to the intermediate chamber is moved to the front chamber side communication port side. 2nd to move
It has a drive unit. A drive source constituting these first and second drive sections is arranged outside the intermediate chamber, and a transmission member that transmits the driving force from the drive source to the board mounting section is arranged outside the intermediate chamber. It extends into the intermediate chamber through a through hole formed in an outer wall. Furthermore, a bellows arranged on the outer periphery of the transmission member and expandable and contractable in the moving direction of the transmission member, and a bellows and the transmission member arranged between the through hole and the inside of the intermediate chamber. and a sealing means disposed between them, so that they are partitioned into a substantially airtight state.

〔Example〕

The present invention will be described in detail below with reference to the drawings.

1 to 3 show the CVD apparatus of this example.

As shown in these figures, the device 31 includes a cylindrical intermediate chamber 32 made of stainless steel, and a cylindrical intermediate chamber 32 made of stainless steel.
On the upper wall 32a of 2, the front chamber 33 and the reaction generation chamber 34 are arranged perpendicularly to each other in point-symmetrical positions with respect to the center of the upper surface.

The front chamber 33 has a rectangular cylindrical shape with a closed upper end, and its open lower end communicates in an airtight manner with an opening made in the upper wall 32a of the intermediate chamber, and this part connects the front chamber and the intermediate chamber. A front chamber side communication port 35 communicates with the chamber. Front room 3
3 has an opening 33a for taking in and out the board 36 and a door 3 for sealing this opening.
3b is placed. Further, an evacuation boat 33c for evacuating the inside of the front chamber 33 is formed at a position below this opening, and this boat communicates with the evacuation system 37 side.

The configuration of the reaction generation chamber 34 is the same as that of the conventional one, so a detailed explanation thereof will be omitted here. This reaction generation chamber 3
The lower end opening of the intermediate chamber 4 communicates in an airtight manner with an opening opened in the upper wall 32a of the intermediate chamber, and this portion serves as a reaction generation chamber side communication port 38 that communicates the reaction generation chamber and the intermediate chamber. A vacuum exhaust boat 34a is formed above the communication port 38, and this vacuum exhaust boat 34a communicates with the vacuum exhaust system 39.

On the other hand, in the intermediate chamber 32 as well, a vacuum exhaust boat 32C is formed in the middle of its outer wall, and this boat communicates with the vacuum exhaust system 41. The upper wall 3 of this intermediate chamber 32
The center portion of 2a projects upward in a cylindrical shape, and a center shaft 42 is disposed vertically passing through the center of this cylindrical projecting portion 32d. A support beam 43 is fixed to the lower end of the center shaft 42 in a state perpendicular thereto. This support beam 43
Support rods 44a and 44b are vertically fixed to the upper surface at positions corresponding to the centers of the front chamber side communication port and the reaction generation chamber side communication port, and the upper ends of these support rods are fixed to the substrate. Carriers 45a and 45b made of quartz are supported for transporting 36. Furthermore, a disk plate 46a having a larger diameter than the communication port 35, 38 is provided at the lower end portion of the support rods 44a, 44b.

46b are formed, and O-rings 47a and 47b for vacuum sealing that can come into contact with the outer peripheral edges of the communication ports 35 and 38 are attached to the upper surfaces of these plates, respectively.

Further, on the outer periphery of the center shaft 42 located in the intermediate chamber, a cylindrical bellows 51 made of stainless steel that can be expanded and contracted in the axial direction of the shaft is arranged.
The upper end of this bellows is closely fixed to the inner surface of the cylindrical protrusion, and the lower end is supported on the outer periphery of the center shaft 42 via a rotating magnetic seal unit 52.

The center shaft 42 is moved up and down along its axial direction from a lower end position A shown in FIG. 1 to an upper end position B shown by an imaginary line by a drive mechanism to be described later. Also, centering on the axis, a position C where one carrier 45a corresponds to the front chamber side communication port 35, and a position C where one carrier 45a corresponds to the front chamber side communication port 35, and this carrier 4
5a is rotated to and from a position corresponding to the other reaction generation chamber side communication port 38. When the center shaft 42 moves upward from the lower end position IA, the carriers 45a and 45b supported thereon are inserted into the front chamber 33 and the reaction generation chamber 34 through the communication ports 35 and 38, respectively. When the center shaft 42 reaches its upper end position, the carrier 4
5a, 45b are in the position shown by imaginary lines in FIG.
7b are pressed against the outer periphery of the respective communication ports 35 and 38, and the respective communication ports 35 and 7b are pressed by the disc plate.
．． A hermetic condition is formed for 3 days.

Next, a drive system for vertically moving and rotating the center shaft 42 will be described with reference to FIGS. 2 and 3. As shown in these figures, a drive system for raising and lowering the center shaft 42, that is, carriers 45a, 4
The drive system for raising and lowering 5b includes a pair of hydraulic cylinder units 61 and 62 vertically arranged outside the intermediate chamber 32, and an operating rod 61a of these units.

The frame has a vertically movable beam 63 extending between the ends of the frame 62a, and a pair of vertical guide beams 64a and 64b for guiding the movement of the beam 63.

The vertically movable beam 63 supports the upper end portion of the center shaft, and the actuating rods 61a, 62 of the cylinder unit.
By expanding and contracting a, the center shaft 42 is moved from its lower end position A to its upper end position B.

On the other hand, a drive system for rotating the center shaft 42,
That is, the drive system for rotating the carriers 45a and 45b includes a motor 65 supported by a vertically moving beam 63,
It has a reduction gear train 66 for transmitting the rotation of the output shaft to the center shaft 42.

The operation sequence of the CVD apparatus in this example is as follows: ■ In the initial state, the front chamber 33, intermediate chamber 32, and reaction chamber 3
The center shaft 42 is set above the center shaft 42, and the carriers 45a and 45b are positioned in the front chamber 33 and the reaction chamber 34, respectively, as shown by imaginary lines in FIG.

- First, the front chamber 33 is returned to atmospheric pressure, the front chamber door 33b is opened, and the first lot of substrates 36 is loaded onto the carrier 45a. When the loading is completed, the front chamber door 33b is opened. 33b is closed, and the front chamber 33 is evacuated by the evacuation system 37.

(2) When the front chamber 33 reaches a high vacuum state, the carriers 45a and 45b are lowered to the lower end position shown by the solid line in FIG. 2 by the elevating drive system.

(2) Next, the center shaft 42 is rotated 180 degrees by the rotary drive system, and the carrier 45a is positioned vertically below the reaction chamber 34, and the carrier 45b interlocked therewith is positioned directly below the front chamber 33.

(2) Once the positions of the carriers 45a, 45 have been exchanged, the carriers 45a, 45b are moved upward by the elevating drive system, and accommodated in the reaction chamber 34 and the front chamber 33, respectively.

(2) Thereafter, the tenth substrate 36 loaded in the carrier 45a is subjected to a CVD process in the reaction chamber 34, and the front chamber 36 in which the carrier 45b is accommodated is
is returned to atmospheric pressure.

■ When the front chamber 33 reaches atmospheric pressure, open the front chamber door 33b.
is opened, and the second lot of substrates is loaded onto the carrier 45b.

■ After loading this 20th board,
The front chamber door 33b is closed and the front chamber 33 is evacuated.

■ After the front chamber 33 reaches a high vacuum state, until the CVD process of the tenth substrate is completed in the reaction chamber 34,
It remains in a standby state.

[Phase] After that, when the CVD process for the 10th board is completed, the carriers 45a and 45b are moved up and down and the positions of the carriers 45b are changed by the rotation drive system in the same manner, and the 20th board a is Loaded carrier 45
b is placed in the reaction chamber 34, and the carrier 45a loaded with the tenth substrate is placed in the front chamber 33.

■ Once the carrier 45a is housed in the front chamber 33, the front chamber 33 is returned to atmospheric pressure, the door 331) of the front chamber is opened, the tenth board is unloaded, and then the carrier 45a is unloaded. Then, the third lot of substrates is loaded.

■ After loading the 30th board, the front chamber door 3
3b is closed, the front chamber 33 is evacuated, and a standby state is maintained until the CVD process of the 20th substrate is completed.

Thereafter, the CVD process of the lot substrates is continuously continued in this manner.

According to the CVD apparatus of this example as described above, the following effects can be obtained.

■ The load-lock mechanism of the CVD equipment has a three-chamber structure: a front chamber, an intermediate chamber, and a reaction chamber. This intermediate chamber can be kept in a high vacuum state at all times, which prevents air from entering the reaction chamber. The contamination of the reaction chamber is extremely reduced, particle generation due to air oxidation is avoided, and oxidation of the substrate surface is avoided because the substrate can be placed in and taken out of the reaction chamber in a high vacuum in the intermediate chamber. .

■ By locating the lifting and rotating drive systems outside the intermediate chamber, the generation of contaminants, particulates, etc. from the mechanical drive parts is avoided.

■ By using two sets of carriers, on the one hand, CVD
During the process, on the other hand, it becomes possible to load and unload the substrate, increasing productivity.

■ The stainless steel seal plate that supports the carrier itself acts as a vacuum seal between each chamber, eliminating the need for gate valves that are expensive, have poor heat resistance, and often break down, and improve equipment performance. Improves maintainability.

■ The vacuum pumping cycle and the vacuum pumping cycle to return to atmospheric pressure are limited to the front chamber, and the capacity of this front chamber can be relatively small, making it more energy efficient than the side of the two-chamber load lock machine. can reduce operating costs.

■ The structure of the present invention does not necessarily require the use of a vacuum; instead, an appropriate atmospheric gas (for example, N, Ar, etc. ) can be used in common or individually, and the pressure in each chamber can be freely set from vacuum to 1 atmosphere or more, so it can be applied to a wide range of processes.

(2) Since the front chamber is an independent vacuum chamber, it is also possible to perform pretreatment such as anhydrous HF etching on the substrate in this front chamber.

In the above-described embodiment, the structure uses two carriers, but it goes without saying that the present invention can also be applied to structures that use a single carrier or even more carriers. be.

Fig. 4 shows an explanatory conceptual diagram when only one carrier is used. In this case, since the moving distance between the front chamber At and the reaction chamber B1 can be reduced, an elevating and rotating drive system is introduced. There is an advantage that the dimensions of the intermediate chamber DI including the portion C1 can be reduced.

Further, FIG. 5 shows a conceptual diagram in which a carrier is used in three chambers. In this case, the front chamber A2 is used for loading and unloading of substrates, and the front chamber A3 is used for pre-processing of substrates.
In the reaction chamber B2, the CVD process can be performed simultaneously. Furthermore, by further advancing this concept, it is possible to arrange a plurality of front chambers and reaction chambers on concentric circles, for example, the first chamber and the reaction chamber.
It is also possible to perform a multilayer CVD process continuously (the front chamber, the second front chamber, the first reaction chamber, and the second reaction chamber).

Furthermore, Fig. 6 shows a configuration using four carriers and having two front chambers and two reaction chambers; by doing so, productivity can be doubled. I can do it.

On the other hand, the present invention is based on the vertical LPGVD mentioned as an example.
In addition to equipment applications, it can also be used for epitaxial growth, organic metal CVD, metal CVD such as tungsten, and plasma CVD.
, [1-V group CVD, diffusion furnace process, and other process equipment as a load lock mechanism can be widely applied.

〔Effect of the invention〕

As explained above, in the present invention, the three-chamber configuration of the front chamber, intermediate chamber, and reaction chamber is adopted as the load-lock mechanism of the CVD apparatus. , it becomes possible to avoid air intrusion into the reaction chamber as much as possible, and it is possible to obtain the effect that generation of particles due to air oxidation can be avoided. Also,
Since the substrate is introduced into the reaction chamber from the intermediate chamber in a high vacuum state, and the substrate is taken out from the reaction chamber into the intermediate chamber in a high vacuum state, it is possible to avoid oxidation of the substrate surface.

Furthermore, in the present invention, a structure is adopted in which the members constituting the drive system of the carrier that transports the substrate are placed as far outside the intermediate chamber as possible, so that particles generated from these mechanical drive parts may damage the substrate surface. This has the effect of minimizing contamination.

[Brief explanation of drawings]

FIG. 1 is a top view showing a CVD apparatus according to an embodiment of the present invention;
Figure 2 is a schematic cross-sectional view of the device shown in Figure 1 taken along line ■-■, and Figure 3 is a schematic cross-section of the device shown in Figure 1 taken along line ■-m. 4 to 6 are explanatory diagrams showing modifications of the apparatus shown in FIG. 1, and FIGS. 7 and 8 are schematic sectional views showing the structure of a conventional CVD apparatus. Explanation of symbols 31...CVD device 32...Intermediate chamber 33...Ante chamber 34...Reaction chamber 35-front chamber side communication port 36...Substrate 37.39.41...Evacuation system 38...Reaction chamber side outlet 42...-Center shaft 43...-Support beams 44a, 44b...Support rods 45a, 45b...Carriers 46a, 46b...Seal plates 47a, 47b...・O-ring 51...Bellows 52...Rotating magnetic unit 61, 62...Cylinder unit 63...Vertical moving beams 64a, 64 +/- guy 65...One rotation motor 66... gear train. Figure 1 E← Figure 7 (2A Figure 2 Figure 3 Figure 5 Figure 4 C/ Figure 6

Claims (4)

[Claims] (1) In a vapor phase chemical reaction generation device that forms a thin film on the surface of a substrate such as a silicon wafer by utilizing a vapor phase chemical generation reaction in a vacuum atmosphere substantially free of oxygen, for loading and unloading the substrate. a front chamber that is substantially airtight when the opening and closing portion is closed; a reaction production chamber that is substantially airtight for forming a thin film on the surface of the substrate; A front chamber side communication port and a reaction generation chamber side communication port that communicate with the front chamber and the reaction generation chamber, respectively, and an intermediate chamber in a substantially airtight state including a sealing means for sealing these communication ports; The substrate placed in the front chamber is transported through the intermediate chamber into the reaction generation chamber, and the substrate processed in the reaction generation chamber is transported through the intermediate chamber and into the front chamber. A load-lock mechanism for a gas-phase chemical reaction generation device, comprising: a substrate transport means for returning the substrate; (2) In the load lock mechanism according to claim 1, the substrate transfer means includes a substrate mounting section for mounting the substrate, and a substrate mounting section that connects the substrate mounting section to the front chamber and the intermediate chamber through the front chamber side communication port. a first drive section that reciprocates between the chambers and reciprocates the mounting section between the reaction generation chamber and the intermediate chamber through the reaction generation chamber side communication port; moving the substrate mounting part that has been moved from the front chamber side communication port into the intermediate chamber to the reaction generation chamber communication port side, and moving the substrate mounting part that has been moved from the reaction generation chamber side communication port into the intermediate chamber; and a second drive section that moves the front chamber side communication port toward the front chamber side communication port, and a drive source constituting the first and second drive sections is disposed outside the intermediate chamber, and the drive source that constitutes the first and second drive sections is arranged outside the intermediate chamber, A transmission member that transmits a driving force from a source to the board mounting section extends into the intermediate chamber through a through hole formed in an outer wall forming the intermediate chamber, and connects the through hole and the inside of the intermediate chamber. The space between the transmission member and the transmission member is substantially reduced by a bellows arranged around the outer periphery of the transmission member and expandable and retractable in the direction of movement of the transmission member, and a sealing means arranged between the bellows and the transmission member. A load-lock mechanism for a gas-phase chemical reaction generation device characterized by being partitioned in an airtight state. (3) In the load lock mechanism according to claim 2, the first and second drive units include a first drive source that reciprocates the transmission member in its axial direction, and a first drive source that reciprocates the transmission member in its axial direction. a second drive source that rotates around an axis; a pivoting plate supported by the distal end portion of the transmission member on the inside of the intermediate chamber; and the front chamber side communication port and the reaction generation chamber supported by the pivoting plate. It has a seal portion that can seal the side communication port, and a support member that supports the substrate mounting portion on the rotation plate, and the rotation of the transmission member by the second drive source causes the rotation of the substrate mounting portion on the rotation plate. The substrate mounting portion supported by the substrate mounting portion is rotated and positioned at a position where it can be inserted into the front chamber and the reaction generation chamber through the front chamber side communication port and the reaction generation chamber side communication port, respectively, and By the reciprocating movement of the transmission member by the first drive source, the substrate mounting portion positioned by the second drive source is moved from the intermediate chamber through the front chamber side communication port or the reaction generation chamber side communication port. , the substrate mounting portion is positioned within the front chamber or the reaction generation chamber, and when the substrate mounting portion is positioned within the front chamber or the reaction generation chamber by the first drive source, the substrate mounting portion is positioned within the front chamber or the reaction generation chamber. The seal portion supported by the revolving plate contacts the outer periphery of the front chamber side communication port or the reaction generation chamber side communication port to seal the front chamber side communication port or the reaction generation chamber side communication port. A load-lock mechanism for a gas-phase chemical reaction generating device, characterized in that the device is configured to hold the load-lock mechanism. (4) In the load lock mechanism according to claim 3, a plurality of the board mounting sections are supported on the rotation plate, and a number of the front chambers and the A reaction generation chamber is arranged, and the plurality of substrate mounting parts are positioned in the intermediate chamber at positions corresponding to the plurality of front chambers and the reaction generation chamber in a certain order by the first driving source. A load-lock mechanism for a gas-phase chemical reaction generator, characterized in that: