JPH03292731A - Plasma processor - Google Patents

Plasma processor

Info

Publication number
JPH03292731A
JPH03292731A JP9572190A JP9572190A JPH03292731A JP H03292731 A JPH03292731 A JP H03292731A JP 9572190 A JP9572190 A JP 9572190A JP 9572190 A JP9572190 A JP 9572190A JP H03292731 A JPH03292731 A JP H03292731A
Authority
JP
Japan
Prior art keywords
electrode
chamber
support shaft
spherical surface
bearing member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9572190A
Other languages
Japanese (ja)
Other versions
JP2734734B2 (en
Inventor
Toshimichi Ishida
敏道 石田
Hiroshi Ogura
洋 小倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9572190A priority Critical patent/JP2734734B2/en
Publication of JPH03292731A publication Critical patent/JPH03292731A/en
Application granted granted Critical
Publication of JP2734734B2 publication Critical patent/JP2734734B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To manufacture the title plasma processor capable of easily adjusting the parallelism and interval between a pair of plasma producing electrodes by a method wherein the holding axle of one electrode is thrust borne by a bearing member held to be universally tilted by a spherical surface seat. CONSTITUTION:A pair of plasma producing one electrode 2 and the other electrode 3 opposing to each other are vertically arranged in chamber 1. A holding axle 5 is thrust borne by a bearing member 6 through the intermediary of thrust bearing 19; this bearing member 6 has spherical surface 6a on the rear surface so as to be mounted and held on a spherical surface seat 7 fixed on the surface of a ceiling wall member 1a in the chamber 1 by the spherical surface 6a; the bearing member 6 can be universally tilted by the spherical surface 6a held by the spherical surface seat 7. That is, the holding axle 5 can be turned clockwise and counterclockwise as shown by an arrow A so that the gradient of the upper electrode 2 with the lower electrode 3 may freely be changed to change the paralleism.

Description

【発明の詳細な説明】 (産業上の利用分野〕 この発明はプラズマ処理装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a plasma processing apparatus.

〔従来の技術〕[Conventional technology]

プラズマ処理装置は、例えば、半導体デバイスの製造工
程などで実用に供されており、この装置を用いてプラズ
マエツチング(ドライエツチング)、プラズマCVD、
プラズマ表面改質などの処理が行われている。
Plasma processing equipment is in practical use, for example, in the manufacturing process of semiconductor devices, and is used to perform plasma etching (dry etching), plasma CVD,
Treatments such as plasma surface modification are being carried out.

このプラズマ処理装置では、第3図にみるように、チャ
ンバー50内に上下一対のプラズマ生成用の電極51と
電極52が対面するようにして設けられており、両電極
間の放電現象によって生成されたプラズマにより、両電
極間に配された被処理体をプラズマ処理するようになっ
ている。
In this plasma processing apparatus, as shown in FIG. 3, a pair of upper and lower plasma generating electrodes 51 and 52 are provided in a chamber 50 so as to face each other, and plasma is generated by a discharge phenomenon between the two electrodes. The object to be processed placed between the two electrodes is subjected to plasma processing using the plasma.

上電極51と下電極52は、この場合、相互の間隔およ
び平行度の厳密な調整が4・要である。そこで、このプ
ラズマ処理装置では、上記間隔および平行度の調整を可
能とさせる構成が、以下のようになっている。
In this case, the mutual spacing and parallelism of the upper electrode 51 and the lower electrode 52 must be precisely adjusted. Therefore, in this plasma processing apparatus, the configuration that enables adjustment of the above-mentioned spacing and parallelism is as follows.

すなわち、下電極52がチャンバー50内において固定
して設けられているのに対し、上電極51が放電チャン
バー50に対して直接固定されていない。つまり、上電
極51の支持は、チャンバ−50に対し可動となってい
る支持軸54によりなされているのである。これを詳し
く述べると、第3図にみるように、支持軸54は、先端
側に上電極51が取り付けられ、他端側がボルト55.
55を足としてチャンバ−50上面に係止されたるベー
ス部材56に固定されていているのであるなお、真空雰
囲気下での放電によりプラズマを発生させる形式では、
上電極51の裏面とチャンバ−50内面の間に伸縮ベロ
ーズ53が設けられていてチャンバー内の真空が保たれ
るようになっている。
That is, while the lower electrode 52 is fixedly provided within the chamber 50, the upper electrode 51 is not directly fixed to the discharge chamber 50. In other words, the upper electrode 51 is supported by the support shaft 54 which is movable with respect to the chamber 50. To explain this in detail, as shown in FIG. 3, the support shaft 54 has an upper electrode 51 attached to its tip end, and a bolt 55 attached to its other end.
It is fixed to a base member 56 which is fixed to the upper surface of the chamber 50 with legs 55 as the legs.
A telescopic bellows 53 is provided between the back surface of the upper electrode 51 and the inner surface of the chamber 50 to maintain a vacuum in the chamber.

上記ベース部材56は、ボルト55.55を正逆回転さ
せれば傾きおよび高さが変化し、これに伴い支持軸54
の上下位置および傾きが変わる。
The inclination and height of the base member 56 change by rotating the bolts 55 and 55 in the forward and reverse directions, and the support shaft 54 changes accordingly.
The vertical position and tilt of will change.

そして、支持軸54の上下位置おまび傾きの変化に伴い
、上下電極51.52の間隔および平行度が変わるので
ある。したがって、ボルト55.55を回転操作すれば
、上下両電極51.52の間隔および平行度を所望の値
に設定する調整が行えることになる。
As the vertical position and inclination of the support shaft 54 changes, the spacing and parallelism of the upper and lower electrodes 51 and 52 change. Therefore, by rotating the bolts 55.55, the spacing and parallelism between the upper and lower electrodes 51,52 can be adjusted to desired values.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上記プラズマ処理装置の場合、上下電極
51.52の間隔および平行度を適切な状態に調整する
ことは簡単ではなかった。これは、ボルト55の回転は
高さと傾きを同時に変化させるからである。間隔だけを
少し変更しようとしても、平行度も同時に変動してしま
うので、間隔と平行度の両方を所望の値にすることが中
々できないのである。
However, in the case of the plasma processing apparatus described above, it is not easy to adjust the spacing and parallelism of the upper and lower electrodes 51 and 52 to appropriate conditions. This is because the rotation of the bolt 55 changes the height and inclination at the same time. Even if you try to slightly change only the spacing, the parallelism will change at the same time, so it is difficult to set both the spacing and the parallelism to desired values.

この発明は、上記事情に鑑み、一対のプラズマ生成用電
極の平行度および間隔の調整が容易なプラズマ処理装置
を提供することを課題とする。
In view of the above circumstances, it is an object of the present invention to provide a plasma processing apparatus in which the parallelism and spacing of a pair of plasma generation electrodes can be easily adjusted.

〔課題を解決するための手段〕[Means to solve the problem]

前記課題を解決するため、この発明にかかるプラズマ処
理装置は、チャンバーと、このチャンバーに対し一定の
姿勢を取る固定球面座と、この固定球面座によりユニバ
ーサルな傾きを可能とするようにして支持された軸受は
部材と、この軸受は部材にスラスト軸受けされてその先
端がチャンバー外からチャンバー内に臨む支持軸と、こ
の支持軸の先端に取り付けられた一方の電極と、チャン
バー内において前記一方の電極に対面する他方の電極を
備え、両電極間に放電が行われるようになっているとと
もに、前記一方の電極が前記支持軸を動かす駆動手段の
働きで前記他方の電極に対し離接可能となっている構成
をとるようにしている〔作   用〕 この発明のプラズマ処理装置では、一方の電極の支持軸
が軸受は部材にスラスト軸受けされ、この軸受は部材が
球面座によりユニバーサルな傾きを可能とするように支
持されているため、電極は、球面座を支点として自由に
傾きを変えることができる。
In order to solve the above problems, a plasma processing apparatus according to the present invention includes a chamber, a fixed spherical seat that maintains a fixed attitude with respect to the chamber, and a fixed spherical seat that is supported in a manner that allows universal tilting. The bearing includes a member, a support shaft that is thrust-beared by the member and whose tip faces into the chamber from outside the chamber, one electrode attached to the tip of the support shaft, and the one electrode inside the chamber. The other electrode is provided facing the other electrode, so that a discharge occurs between the two electrodes, and the one electrode can be moved into and out of contact with the other electrode by the action of a driving means that moves the support shaft. [Function] In the plasma processing apparatus of the present invention, the support shaft of one electrode is thrust-beared by a member, and this bearing is configured such that the member can be tilted universally by a spherical seat. Since the electrode is supported in such a manner that the electrode can freely change its inclination using the spherical seat as a fulcrum.

そこで、この一方の電極(可動電極)を他方の電極(固
定電極)に押し付けると、この一方の電極は他方の電極
に対して面接触して平行度を自動的に調える。
Therefore, when this one electrode (movable electrode) is pressed against the other electrode (fixed electrode), this one electrode comes into surface contact with the other electrode, and the parallelism is automatically adjusted.

この発明のプラズマ処理装置では、支持軸が軸受は部材
によりスラスト軸受けされているので、支持軸をスラス
トさせると、一方の電極は他方の電極に対して平行度を
保った状態で離接する。
In the plasma processing apparatus of the present invention, the support shaft is thrust-beared by a member, so when the support shaft is thrust, one electrode comes into contact with and separates from the other electrode while maintaining parallelism.

〔実 施 例〕〔Example〕

ついで、この発明にかかるプラズマ処理装置の一実施例
を図面を参照しながら詳しく説明する。
Next, one embodiment of the plasma processing apparatus according to the present invention will be described in detail with reference to the drawings.

第1図は、実施例のプラズマ処理装置の構成の概略をあ
られし、第2図は、この実施例のプラズマ処理装置の構
成の詳細をあられす。
FIG. 1 shows the outline of the configuration of the plasma processing apparatus of this embodiment, and FIG. 2 shows the details of the structure of the plasma processing apparatus of this embodiment.

このプラズマ処理装置では、チャンバー1内に上下一対
のプラズマ生成用の電極(一方の電極)2と電極(他方
の電極)3が対面するようにして配設されている。画電
極2.3間の放電現象により生成させたプラズマにより
、画電極2.3間に配された被処理体(ウェハなど)2
5をプラズマ処理する。lbは排気口である。
In this plasma processing apparatus, a pair of upper and lower plasma generation electrodes (one electrode) 2 and an electrode (the other electrode) 3 are disposed in a chamber 1 so as to face each other. The object to be processed (such as a wafer) 2 placed between the picture electrodes 2 and 3 is generated by the plasma generated by the discharge phenomenon between the picture electrodes 2 and 3.
5 is subjected to plasma treatment. lb is an exhaust port.

このプラズマ装置でも、上電極2がチャンバー外からチ
ャンバー内↓こ臨む支持軸5の先端に取り付けられて支
持されている。
In this plasma device as well, the upper electrode 2 is attached to and supported at the tip of a support shaft 5 that faces from outside the chamber to inside the chamber.

しかし、この支持軸5は軸受は部材6でスラストベアリ
ング19を介してスラスト軸受けされ、この軸受は部材
6は下面に球面6aを有して、この球面6aで、チャン
バー1の天井壁部材1aの上面に固定された球面座7上
に載置支持されており、この点で従来と異なる。軸受は
部材6は、その球面6aで球面座7に支持されているた
めに、ユニバーサルな傾きを可能とする。すなわち、支
持軸5が第1図に矢印Aで示すように左ないし右に振れ
て上電極2の下電極3に対する傾きが自由に変化し平行
度が変わるようになっているのである。
However, this support shaft 5 is thrust-beared by a member 6 via a thrust bearing 19, and this bearing has a spherical surface 6a on the lower surface, and this spherical surface 6a is used to support the ceiling wall member 1a of the chamber 1. It is mounted and supported on a spherical seat 7 fixed to the upper surface, and is different from the conventional one in this point. Since the bearing member 6 is supported by the spherical seat 7 with its spherical surface 6a, universal tilting is possible. That is, as the support shaft 5 swings to the left or right as shown by arrow A in FIG. 1, the inclination of the upper electrode 2 with respect to the lower electrode 3 changes freely, and the degree of parallelism changes.

支持軸5の他端に設けられたベース部材10は、パルス
モータ11で正逆回転駆動されるネジ棒12にネジ結合
していて、ネジ棒12の正逆回転に伴い第1図に矢印B
で示すように上下に移動する。そして、ベース部材10
の上下移動に伴い、支持軸5が上下移動して、上電極2
と下電極3の間隔が変わるようになっている。つまり、
上記ベース部材10、パルスモータ11およびネジ棒1
2は、電極2.3が離接する方向に支持軸5を動かす駆
動手段を構成しているのである。
A base member 10 provided at the other end of the support shaft 5 is screwed to a threaded rod 12 that is driven to rotate forward and backward by a pulse motor 11, and as the screw rod 12 rotates forward and backward, the arrow B in FIG.
Move up and down as shown. And base member 10
As the support shaft 5 moves up and down, the upper electrode 2 moves up and down.
The distance between the lower electrode 3 and the lower electrode 3 is changed. In other words,
The base member 10, pulse motor 11 and threaded rod 1
Reference numeral 2 constitutes a driving means for moving the support shaft 5 in the direction in which the electrodes 2.3 move toward and away from each other.

この場合も、上電極2の裏面とチャンバ−1内面との間
に伸縮ベローズ4が設けられているが、この伸縮ベロー
ズ4は、支持軸5の動きに応じて柔軟に伸び縮みするた
め、上電極2の動きを妨げることがない。
In this case as well, an expandable bellows 4 is provided between the back surface of the upper electrode 2 and the inner surface of the chamber 1, but since this expandable bellows 4 flexibly expands and contracts in accordance with the movement of the support shaft 5, The movement of the electrode 2 is not hindered.

パルスモータ11の働きで支持軸5がチャンバー1内に
伸びて上電極2が下電極3に密接して、上電極2は自然
に下電極3に対して完全に平行するので、ここでクラン
プ15で軸受は部材6の球面座7に対する傾きを固定す
る。この状態でパルスモータ11を駆動し支持軸5を上
下方向に動かせば、上電極2は下電極3に対し完全に平
行を保った状態で離接する。
The support shaft 5 is extended into the chamber 1 by the action of the pulse motor 11, and the upper electrode 2 is brought into close contact with the lower electrode 3. Since the upper electrode 2 is naturally completely parallel to the lower electrode 3, the clamp 15 is The bearing fixes the inclination of the member 6 with respect to the spherical seat 7. In this state, if the pulse motor 11 is driven to move the support shaft 5 in the vertical direction, the upper electrode 2 will move toward and away from the lower electrode 3 while remaining completely parallel to it.

このプラズマ処理装置では、支持軸5の軸線は球面6a
の法線に一致している。このようになっていると、平行
度を変えたときの上下の移動量と下電極に対する上電極
の軸芯のズレのいずれもが最小にできるといった利点が
ある。
In this plasma processing apparatus, the axis of the support shaft 5 is a spherical surface 6a.
coincides with the normal of This has the advantage that both the amount of vertical movement when changing the parallelism and the misalignment of the axis of the upper electrode with respect to the lower electrode can be minimized.

続いて、実施例のプラズマ処理装置のその他の構成につ
いて説明する。
Next, other configurations of the plasma processing apparatus of the example will be explained.

上電極2および下電極3は、流路2a、3aを流れる水
で冷却される。また、上電極2の流路2bおよびパイプ
16を介して必要な処理ガスの導入がなされる。上電極
2の下面には処理ガスを噴出させるための多数の細孔2
c・・・が設けられている。下電極3には高周波電力の
供給手段RFが設けられている。また、下電極3の中央
付近には被処理体25を下電極3上に載置するための昇
降手段(例えば、ウェハつき上げピン)26が設けられ
ている。
The upper electrode 2 and the lower electrode 3 are cooled by water flowing through the channels 2a and 3a. Further, necessary processing gas is introduced through the flow path 2b of the upper electrode 2 and the pipe 16. The lower surface of the upper electrode 2 has many pores 2 for blowing out the processing gas.
c... is provided. The lower electrode 3 is provided with high frequency power supply means RF. Furthermore, a lifting means (for example, a wafer lifting pin) 26 is provided near the center of the lower electrode 3 for placing the object to be processed 25 on the lower electrode 3.

ダイアルゲージ20は、ベース部材IOの上下方向の移
動量(すなわち上下電極2.3間の間隔に対応する量)
を示す。すなわち、ベース部材10の肩10aに上から
当接する測定棒21がヘス部材10の上下動に伴って上
下移動し、この動きがダイアルゲージ20で表示される
のである。
The dial gauge 20 measures the vertical movement amount of the base member IO (that is, the amount corresponding to the distance between the upper and lower electrodes 2.3).
shows. That is, the measuring rod 21 that contacts the shoulder 10a of the base member 10 from above moves up and down as the Hess member 10 moves up and down, and this movement is displayed on the dial gauge 20.

パルスモータ11の回転は、プーリー17および伝達ベ
ルト18を介してネジ棒12に伝えられる。絶縁材Gは
電極2.3の必要な電気的絶縁状態を確保するためのも
のである。
The rotation of the pulse motor 11 is transmitted to the threaded rod 12 via a pulley 17 and a transmission belt 18. The insulating material G is for ensuring the necessary electrical insulation of the electrodes 2.3.

なお、上記プラズマ処理装置には、図示の構成以外に、
チャンバー1内を必要な真空雰囲気にするための真空排
気手段、不活性ガスや使用材料ガス等の供給手段、ある
いは、プラズマ生成用の高周波電圧を各電極に印加する
電源手段等がそれぞれ、通常用いらる構成でもって設け
られていることはいうまでもない。
Note that the above plasma processing apparatus includes, in addition to the configuration shown in the figure,
Vacuum evacuation means for creating a necessary vacuum atmosphere in the chamber 1, means for supplying inert gas and material gas, power supply means for applying high frequency voltage to each electrode for plasma generation, etc. are all normally used. Needless to say, it is provided with the necessary configuration.

この発明は、上記実施例に限らない。例えば、上記支持
軸5の軸線が球面6aの法線と一致していなくてもよい
のである。
This invention is not limited to the above embodiments. For example, the axis of the support shaft 5 does not have to coincide with the normal line of the spherical surface 6a.

〔発明の効果〕〔Effect of the invention〕

この発明のプラズマ処理装置では、プラズマ生成用の一
対の電極の間の間隔が平行度の調整とは独立に変えるこ
とができるため、電極極の間隔の調整が極めて容易であ
る。
In the plasma processing apparatus of the present invention, since the distance between the pair of electrodes for plasma generation can be changed independently of the adjustment of parallelism, it is extremely easy to adjust the distance between the electrodes.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この発明の実施例にかかるプラズマ処理装置
の構成をあられす概略断面図、第2図は、このプラズマ
処理装置の構成の詳細をあられす一部所面図、第3図は
、従来のプラズマ処理装置の構成をあられす概略断面図
である。 1・・・チャンバー 2・・・上電極(一方の電極)3
・・・下電極 5・・・支持軸 6・・・軸受は部材 
6a・・・球面  7・・・球面座(固定球面座)  
10・・・ベース部材  ll・・・パルスモータ  
12・・・ネジ棒  25・・・被処理体
FIG. 1 is a schematic sectional view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a partial partial view showing the details of the configuration of this plasma processing apparatus, and FIG. 1 is a schematic cross-sectional view showing the configuration of a conventional plasma processing apparatus. 1... Chamber 2... Upper electrode (one electrode) 3
... Lower electrode 5 ... Support shaft 6 ... Bearing is a member
6a... Spherical surface 7... Spherical seat (fixed spherical seat)
10...Base member ll...Pulse motor
12... Threaded rod 25... Object to be processed

Claims (1)

【特許請求の範囲】[Claims] 1 チャンバーと、このチャンバーに対し一定の姿勢を
取る固定球面座と、この固定球面座によりユニバーサル
な傾きを可能とするようにして支持された軸受け部材と
、この軸受け部材にスラスト軸受けされてその先端がチ
ャンバー外からチャンバー内に臨む支持軸と、この支持
軸の先端に取り付けられた一方の電極と、チャンバー内
において前記一方の電極に対面する他方の電極を備え、
両電極間に放電が行われるようになっているとともに、
前記一方の電極が前記支持軸を動かす駆動手段の働きで
前記他方の電極に対し離接可能となっているプラズマ処
理装置。
1 A chamber, a fixed spherical seat that maintains a fixed posture with respect to the chamber, a bearing member supported by the fixed spherical seat in such a way as to allow universal tilting, and a tip of the bearing member that is thrust-beared by the bearing member. includes a support shaft facing into the chamber from outside the chamber, one electrode attached to the tip of the support shaft, and another electrode facing the one electrode inside the chamber,
A discharge is generated between the two electrodes, and
A plasma processing apparatus, wherein the one electrode can be moved into and out of contact with the other electrode by the action of a driving means that moves the support shaft.
JP9572190A 1990-04-10 1990-04-10 Plasma processing equipment Expired - Fee Related JP2734734B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9572190A JP2734734B2 (en) 1990-04-10 1990-04-10 Plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9572190A JP2734734B2 (en) 1990-04-10 1990-04-10 Plasma processing equipment

Publications (2)

Publication Number Publication Date
JPH03292731A true JPH03292731A (en) 1991-12-24
JP2734734B2 JP2734734B2 (en) 1998-04-02

Family

ID=14145342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9572190A Expired - Fee Related JP2734734B2 (en) 1990-04-10 1990-04-10 Plasma processing equipment

Country Status (1)

Country Link
JP (1) JP2734734B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2010114271A (en) * 2008-11-06 2010-05-20 Tokyo Electron Ltd Movable gas introduction structure, and substrate processing apparatus
US20140158299A1 (en) * 2011-07-29 2014-06-12 Wuxi Huaying Microelectronics Technology Co., Ltd Multi-Chamber Semiconductor Processing Device
US20200328065A1 (en) * 2018-04-17 2020-10-15 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114271A (en) * 2008-11-06 2010-05-20 Tokyo Electron Ltd Movable gas introduction structure, and substrate processing apparatus
US20140158299A1 (en) * 2011-07-29 2014-06-12 Wuxi Huaying Microelectronics Technology Co., Ltd Multi-Chamber Semiconductor Processing Device
US9859134B2 (en) * 2011-07-29 2018-01-02 Wuxi Huaying Microelectronics Technology Co., Ltd Multi-chamber semiconductor processing device
US20200328065A1 (en) * 2018-04-17 2020-10-15 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US11915911B2 (en) * 2018-04-17 2024-02-27 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control

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