JPH0329163B2 - - Google Patents
Info
- Publication number
- JPH0329163B2 JPH0329163B2 JP58060460A JP6046083A JPH0329163B2 JP H0329163 B2 JPH0329163 B2 JP H0329163B2 JP 58060460 A JP58060460 A JP 58060460A JP 6046083 A JP6046083 A JP 6046083A JP H0329163 B2 JPH0329163 B2 JP H0329163B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- ohmic electrode
- nonlinear resistor
- ohmic
- voltage nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910052573 porcelain Inorganic materials 0.000 claims description 8
- 229910002367 SrTiO Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Description
本発明は電圧非直線性抵抗体に関する。
近年、バリスタ特性とコンデンサ特性を併有す
るセラミツクバリスタとしてSrTiO3系半導体磁
器を素体とする電圧非直線性抵抗体が開発され、
種々提案されている。この種の電圧非直線性抵抗
体は、例えば、特開昭57−187906号公報に示され
るように、半導体磁器素体の表面に銀ペーストを
塗布し、これを焼成して非オーム性電極とした構
造を有している。しかし、銀などの非オーム性電
極を形成した場合、電極と磁器表面の間にも電圧
−電流特性が非直線性を示す領域が形成され、し
きい値電圧（Vth）が加工あるいは使用時に変動
するため、高電圧パルスによりこれを除去しなけ
ればならないという欠点があつた。他方、Al，
Ag−Zn−SbあるいはNi等のオーム性電極を形成
することが考えられるが、この場合、非オーム性
電極を形成した場合における欠点は解消される
が、電極自体抵抗が高いためサージ耐量が低くな
るという問題があつた。
本発明は前記欠点や問題に鑑みてなされたもの
で、しきい値電圧（Vth）が加工あるいは使用時
に変動するのを防止すること、およびサージ耐量
の低下を防止することを技術的課題とし、低電圧
域から高電圧域にわたつて安定な電圧電流特性を
示すSrTiO3系半導体磁器からなる電圧非直線性
抵抗体を提供することを目的とする。
本発明の要旨は、結晶粒界を高抵抗化してなる
SrTiO3系半導体磁器からなる半導体磁器素体と、
その表面に形成された電極とからなり、該電極が
前記半導体磁器素体の表面に並列に設けられたオ
ーム性電極と非オーム性電極とからなることを特
徴とする電圧非直線性抵抗体にある。
以下、添付の図面を参照して本発明を具体的に
説明する。
図において、１は本発明に係る電圧非直線性抵
抗体で、２は結晶粒子２ａの粒界２ｂを高抵抗化
してなるSrTiO3系半導体磁器からなる素体、３
は非オーム性電極、４はオーム性電極で、非オー
ム性電極３とオーム性電極４は前記素子２の表面
に並列して形成されている。図示の例では、非オ
ーム性電極３はリング状に形成され、その内周部
が円状に形成されたオーム性電極４の外周部と重
ねられ並列されているが、必ずしも図示の様にす
る必要はなく、両者の関係を逆にしたり、あるい
は両者を平行な棒状に形成してもよく、要は素体
の表面上に電気的に接続された状態で並列して形
成すればよい。
実施例 １
SrTiO384.8モル％、CaTiO315モル％、
Y2O30.2モル％からなる半導体磁器組成物に５重
量％のバインダを加えて造粒し、これを直径10
mm、肉厚0.5mmの円板に成形した後、空気中1000
℃にて１時間予備焼成し、次いで還元性雰囲気中
1350〜1400℃で１時間焼成して半導体化し、さら
に空気中1100℃で３時間熱処理して結晶粒界を再
酸化させて半導体磁器素体を得た。この素体の両
表面にその中心と中心を一致させてそれぞれ外径
７mm、内径３mmのリング状に、銀を主体とするペ
ーストを印刷して、800℃で焼付けて非オーム性
電極３を形成した。次いで、非オーム性電極３を
形成した素体２の表面中央部に、その中心と中心
を一致させて直径3.5mmの円状に、銀と亜鉛とア
ンチモンを主体とするペーストを印刷し、450℃
で焼付けてオーム性電極を形成し、図に示す構造
の電圧非直線性抵抗体１を得た。
比較例 １
実施例１で用意した半導体磁器素体１の両表面
に、その中心と中心を一致させて直径７mmの円状
に銀を主体とするペーストを印刷し、800℃で焼
付けて非オーム性電極を形成し、電圧非直線性抵
抗体を得た。
比較例 ２
実施例１で用意した半導体磁器素体１の両表面
に、その中心と中心を一致させて直径７mmの円状
に銀、亜鉛およびアンチモンを主体とするペース
トを印刷し、450℃で焼付けてオーム性電極を形
成し、電圧非直線性抵抗体を得た。
実施例および比較例で得たそれぞれの電圧非直
線性抵抗体について、300Vのパルス電圧印加前
後のしきい値電圧（Vth）および非直線指数
（α）を求める一方、サージ耐量を測定した。そ
れらの結果（平均値）を第１表に示す。なお、サ
ージ耐量を測定した試料群は、パルス電圧印加前
後のVthおよびαを求めた試料群とは別のもので
ある。
The present invention relates to voltage nonlinear resistors. In recent years, a voltage nonlinear resistor whose element body is SrTiO 3 semiconductor ceramic has been developed as a ceramic varistor that has both varistor and capacitor characteristics.
Various proposals have been made. This type of voltage nonlinear resistor is made by applying silver paste to the surface of a semiconductor ceramic body and baking it to form a non-ohmic electrode, as shown in Japanese Patent Application Laid-Open No. 57-187906. It has a structure that However, when a non-ohmic electrode such as silver is formed, a region where the voltage-current characteristics exhibit non-linearity is formed between the electrode and the porcelain surface, and the threshold voltage (Vth) fluctuates during processing or use. Therefore, there was a drawback that this had to be removed using a high voltage pulse. On the other hand, Al,
It is possible to form an ohmic electrode such as Ag-Zn-Sb or Ni, but in this case, the disadvantages of forming a non-ohmic electrode are eliminated, but the electrode itself has a high resistance, so the surge resistance is low. There was a problem. The present invention has been made in view of the above-mentioned drawbacks and problems, and its technical problems are to prevent the threshold voltage (Vth) from fluctuating during processing or use, and to prevent the surge resistance from decreasing. The purpose of the present invention is to provide a voltage nonlinear resistor made of SrTiO 3 semiconductor ceramic that exhibits stable voltage-current characteristics from a low voltage range to a high voltage range. The gist of the present invention is to increase the resistance of crystal grain boundaries.
A semiconductor porcelain body made of SrTiO 3 -based semiconductor porcelain,
an ohmic electrode and a non-ohmic electrode provided in parallel on the surface of the semiconductor ceramic body. be. Hereinafter, the present invention will be specifically described with reference to the accompanying drawings. In the figure, 1 is a voltage nonlinear resistor according to the present invention, 2 is an element body made of SrTiO 3 semiconductor ceramic made by increasing the resistance of the grain boundaries 2b of crystal grains 2a, and 3
4 is a non-ohmic electrode, and 4 is an ohmic electrode. The non-ohmic electrode 3 and the ohmic electrode 4 are formed in parallel on the surface of the element 2. In the illustrated example, the non-ohmic electrode 3 is formed in a ring shape, and its inner circumferential portion overlaps and is juxtaposed with the outer circumferential portion of the ohmic electrode 4, which is formed in a circular shape. It is not necessary, and the relationship between the two may be reversed, or both may be formed into parallel rod shapes, and in short, they may be formed in parallel on the surface of the element body in an electrically connected state. Example 1 SrTiO 3 84.8 mol%, CaTiO 3 15 mol%,
A semiconductor ceramic composition containing 0.2 mol% of Y 2 O 3 is granulated by adding 5% by weight of a binder, and this is granulated into granules with a diameter of 10
mm, after forming into a disc with a wall thickness of 0.5 mm, 1000 ml in air.
Precalcined for 1 hour at ℃, then in a reducing atmosphere
It was fired at 1350 to 1400°C for 1 hour to convert it into a semiconductor, and then heat treated in air at 1100°C for 3 hours to reoxidize the grain boundaries to obtain a semiconductor ceramic body. A paste mainly composed of silver is printed on both surfaces of this element in the form of a ring with an outer diameter of 7 mm and an inner diameter of 3 mm, with the centers matching each other, and is baked at 800°C to form the non-ohmic electrode 3. did. Next, a paste mainly composed of silver, zinc, and antimony was printed in a circular shape with a diameter of 3.5 mm on the center of the surface of the element body 2 on which the non-ohmic electrode 3 had been formed, with the centers of the pastes aligned with each other. ℃
An ohmic electrode was formed by baking, and a voltage nonlinear resistor 1 having the structure shown in the figure was obtained. Comparative Example 1 A paste mainly composed of silver was printed on both surfaces of the semiconductor porcelain body 1 prepared in Example 1 in a circular shape with a diameter of 7 mm with the centers coincident, and baked at 800°C to make it non-ohmic. Then, a voltage nonlinear resistor was obtained. Comparative Example 2 A paste mainly composed of silver, zinc, and antimony was printed on both surfaces of the semiconductor porcelain body 1 prepared in Example 1 in a circular shape with a diameter of 7 mm with the centers coincident, and was heated at 450°C. By baking, an ohmic electrode was formed and a voltage nonlinear resistor was obtained. For each of the voltage nonlinear resistors obtained in Examples and Comparative Examples, the threshold voltage (Vth) and nonlinear index (α) before and after application of a pulse voltage of 300 V were determined, and the surge withstand capacity was measured. The results (average values) are shown in Table 1. Note that the sample group for which surge resistance was measured is different from the sample group for which Vth and α were determined before and after pulse voltage application.
【表】
第１表の結果から明らかなように、非オーム性
電極のみを形成した比較例１の電圧非直線性抵抗
体は、パルス電圧の印加によつてしきい値電圧が
大きく低下し、またオーム性電極のみを形成した
比較例２のものはパルス電圧によつてしきい値電
圧および非直線指数（α）はさほど変化しない
が、サージ耐量が低下しているのに対し、本発明
に係る電圧非直線性抵抗体は300Vのパルス電圧
に対しても特性が安定しており、しかもサージ耐
量も比較例１の従来のものと同程度の大きさを示
す。
以上説明したように、本発明は、非オーム性電
極とオーム性電極とを並列して形成し、それらの
電極の相互作用によりパルス電圧によるしきい値
電圧の変動を阻止すると共に、サージ耐量の低下
を防止したので、低電圧から高電圧まで安定した
電圧電流特性を示す電圧非直線性抵抗体を得るこ
とができるという優れた効果を示す。[Table] As is clear from the results in Table 1, the voltage nonlinear resistor of Comparative Example 1 in which only non-ohmic electrodes were formed had a threshold voltage that significantly decreased upon application of a pulse voltage. In addition, in Comparative Example 2 in which only ohmic electrodes were formed, the threshold voltage and nonlinear index (α) did not change much depending on the pulse voltage, but the surge resistance decreased, whereas the present invention Such a voltage nonlinear resistor has stable characteristics even with a pulse voltage of 300 V, and also exhibits a surge withstand capacity comparable to that of the conventional resistor of Comparative Example 1. As explained above, the present invention forms a non-ohmic electrode and an ohmic electrode in parallel, and the interaction between these electrodes prevents fluctuations in threshold voltage due to pulse voltage, and also improves surge resistance. Since the voltage drop is prevented, a voltage nonlinear resistor exhibiting stable voltage-current characteristics from low voltages to high voltages can be obtained, which is an excellent effect.
図は本発明に係る電圧非直線性抵抗体の断面模
型図である。
１〜電圧非直線性抵抗体、２〜半導体磁器素
体、３〜非オーム性電極、４〜オーム性電極。
The figure is a cross-sectional model diagram of a voltage nonlinear resistor according to the present invention. 1 - voltage nonlinear resistor, 2 - semiconductor ceramic element, 3 - non-ohmic electrode, 4 - ohmic electrode.
Claims (1)
体磁器からなる半導体磁器素体と、その表面に形
成された電極とからなり、該電極が前記半導体磁
器素体の表面に並列に設けられたオーム性電極と
非オーム性電極とからなることを特徴とする電圧
非直線性抵抗体。1 Consisting of a semiconductor porcelain element made of SrTiO 3 -based semiconductor porcelain with high resistance grain boundaries, and an electrode formed on the surface thereof, the electrodes are provided in parallel on the surface of the semiconductor porcelain element. A voltage nonlinear resistor comprising an ohmic electrode and a non-ohmic electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58060460A JPS59186307A (en) | 1983-04-05 | 1983-04-05 | Voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58060460A JPS59186307A (en) | 1983-04-05 | 1983-04-05 | Voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59186307A JPS59186307A (en) | 1984-10-23 |
| JPH0329163B2 true JPH0329163B2 (en) | 1991-04-23 |
Family
ID=13142894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58060460A Granted JPS59186307A (en) | 1983-04-05 | 1983-04-05 | Voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59186307A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2533247Y2 (en) * | 1988-10-14 | 1997-04-23 | ティーディーケイ株式会社 | Varistor |
-
1983
- 1983-04-05 JP JP58060460A patent/JPS59186307A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59186307A (en) | 1984-10-23 |
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