JPH032838A - Production of liquid crystal display device - Google Patents
Production of liquid crystal display deviceInfo
- Publication number
- JPH032838A JPH032838A JP1136084A JP13608489A JPH032838A JP H032838 A JPH032838 A JP H032838A JP 1136084 A JP1136084 A JP 1136084A JP 13608489 A JP13608489 A JP 13608489A JP H032838 A JPH032838 A JP H032838A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- signal lines
- display device
- crystal display
- common line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 26
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 230000005611 electricity Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、液晶表示装置の製造方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing a liquid crystal display device.
（従来の技術）
近年１画像または文字等を液晶により表示する液晶表示
装置は、軽量、薄型、そして低消費電力等の特長を有す
るところから、フラットパネル・デイスプレィとして注
目を集めている。(Prior Art) In recent years, liquid crystal display devices that display an image or text using liquid crystals have attracted attention as flat panel displays because of their features such as light weight, thinness, and low power consumption.
第４図は、そのような従来の走査回路を内蔵したアクテ
ィブ・マトリクス方式の液晶表示装置の回路を示してお
り、１は表示部、２は垂直走査回路、３は水平走査回路
、４は薄膜トランジスタ（以下、ＴＰＴと記す）、５は
ゲート信号線、６はソース信号線、７は画素電極、モし
て８はボンディングパッドである。Figure 4 shows a circuit of an active matrix liquid crystal display device incorporating such a conventional scanning circuit, in which 1 is a display section, 2 is a vertical scanning circuit, 3 is a horizontal scanning circuit, and 4 is a thin film transistor. (hereinafter referred to as TPT), 5 is a gate signal line, 6 is a source signal line, 7 is a pixel electrode, and 8 is a bonding pad.
このように構成した液晶表示装置は、垂直走査回路２に
より順番にゲート信号線５を走査し、他方水平走査回路
３により順次ソース信号線６を走査することにより、全
ての画素電極７に順番に画像情報を書込むことができ画
像を表示することができる。In the liquid crystal display device configured in this manner, the gate signal lines 5 are sequentially scanned by the vertical scanning circuit 2, and the source signal lines 6 are sequentially scanned by the horizontal scanning circuit 3, so that all the pixel electrodes 7 are sequentially scanned. Image information can be written and images can be displayed.
（発明が解決しようとする課題）
しかしながら、このような構成の液晶表示装置は製造中
、液晶配向膜のラビングや、液晶注入等を行なう際に静
電気が発生する場合があり、それにより画素部や、垂直
走査回路あるいは水平走査回路を構成するＴＰＴが静電
破壊され、その結果、部分的に＠前部が機能せず、した
がって製品の表示品質が劣化する欠点があった。(Problem to be Solved by the Invention) However, during manufacturing of a liquid crystal display device having such a configuration, static electricity may be generated during rubbing of the liquid crystal alignment film, injection of liquid crystal, etc. , the TPT constituting the vertical scanning circuit or the horizontal scanning circuit is damaged by electrostatic discharge, and as a result, the front part partially does not function, resulting in a disadvantage that the display quality of the product deteriorates.
本発明は、上述した製造中の静電破壊の問題点を排除す
る液晶表示装置の製造方法の提供を目的とする。An object of the present invention is to provide a method for manufacturing a liquid crystal display device that eliminates the above-mentioned problem of electrostatic discharge damage during manufacturing.
（課題を解決するための手段）
本発明は上記の目的を、液晶表示装置を構成する基板上
に、短絡線により短絡させた２本の共通ラインを形成し
、かつ、ゲート信号線、ソース信号線、及びそれらの信
号線の走査回路のボンディングパッドの全てを、整流特
性を有する素子２個を同一整流方向に直列接続してなる
、両端が上記２本の共通ラインにそれぞれ順方向に接続
した保護ダイオードの、上記直列接続部に接続して、ゲ
ート信号線、ソース信号線、及びそれらの信号線の走査
回路のボンディングパッドの全てに電位差を有しない状
態として製造することにより達成する。(Means for Solving the Problems) The present invention has achieved the above object by forming two common lines short-circuited by a short-circuit line on a substrate constituting a liquid crystal display device, and forming a gate signal line and a source signal line. All the wires and the bonding pads of the scanning circuit for those signal lines are formed by connecting two elements having rectifying characteristics in series in the same rectifying direction, and both ends are connected to the two common lines in the forward direction. This is achieved by connecting the protection diode to the series connection portion and manufacturing the gate signal line, the source signal line, and the bonding pads of the scanning circuits of these signal lines so that there is no potential difference.
（作 用）
本発明によれば、たとえば液晶工程やＴＰＴ基板の取扱
時に静電気が発生しても、ゲート信号線、ソース信号線
およびボンディングパッド間に電位差を発生しないから
、ＴＰＴの静電破壊が防止され信頼性が高く品質のよい
液晶表示装置が歩留りよく製造できることになる。(Function) According to the present invention, even if static electricity is generated during the liquid crystal process or when handling the TPT substrate, no potential difference is generated between the gate signal line, source signal line, and bonding pad, so that static electricity damage to the TPT is prevented. This means that a highly reliable and high quality liquid crystal display device can be manufactured with high yield.
（実施例） 以下１本発明を図面を用いて実施例により説明する。(Example) EMBODIMENT OF THE INVENTION Below, one invention will be explained by an example using drawings.
第１図は本発明の一実施例を示す図で、走査回路を内蔵
したアクティブ・マトリクス方式の液晶表示装置の回路
構成を示し、９は保護回路としての保護ダイオード、
１０は共通ライン（Ｖ、）、１１は共通ライン（ＶＯ）
、１２は画像表示装置の製造中、前記の共通ライン（Ｖ
、）１０、共通ライン（Ｖ、）１１間を短絡するための
短絡線、１３は１にΩないし１０にΩ程度の保護抵抗で
あり、その他の説明しない工ないし８の符号は第４図と
同じものを示している。FIG. 1 is a diagram showing an embodiment of the present invention, showing the circuit configuration of an active matrix type liquid crystal display device with a built-in scanning circuit, and 9 is a protection diode as a protection circuit;
10 is a common line (V,), 11 is a common line (VO)
, 12 are connected to the common line (V
, ) 10, a shorting wire for shorting between the common lines (V, ) 11, 13 is a protective resistance of about 1Ω to 10Ω, and other unexplained elements to 8 are as shown in Figure 4. showing the same thing.
本発明は図示したように、ゲート信号線５．ソース信号
１ＩＩｉＩ６およびボンディングパッド８の全てを、２
個のダイオードを同一方向に直列接続してなる保護ダイ
オード９の、上記直列接続部に接続して共通ライン（Ｖ
、）１０と共通ライン（ＶＤ）１１に接続されており、
さらに共通ライン（ｖ 、） ｉｏと共通ライン（ＶＤ
）１１とは短絡線１２によって保護抵抗１３を設けて接
続されている。したがって、全てのゲート信号線５、ソ
ース信号線６およびボンディングパッド８は同電位に保
たれる。As shown in the figure, the present invention includes a gate signal line 5. All source signals 1IIIiI6 and bonding pads 8 are
A protection diode 9 formed by connecting diodes in series in the same direction is connected to the series connection part and connected to a common line (V
, ) 10 and the common line (VD) 11,
Furthermore, common line (v,) io and common line (VD
) 11 through a short-circuit wire 12 with a protective resistor 13 provided therebetween. Therefore, all gate signal lines 5, source signal lines 6, and bonding pads 8 are kept at the same potential.
たとえば液晶工程の配向膜のラビング中に静電気が発生
し、あるゲート信号線５が正の電位にチャージされたと
しても、保護ダイオード９を経て電流が共通ライン（Ｖ
Ｄ）１１に流出するため、ゲート信号線５の電位は殆ど
上昇せず、同様に静電気により逆に負の電位にチャージ
されても、保護ダイオード９を経て電流が共通ライン（
Ｖ、）１０から流入するため、ゲート信号線５の電位は
殆ど低下することはない。For example, even if static electricity is generated during rubbing of the alignment film in the liquid crystal process and a certain gate signal line 5 is charged to a positive potential, the current will pass through the protection diode 9 to the common line (V
D) 11, the potential of the gate signal line 5 hardly rises, and even if it is similarly charged to a negative potential due to static electricity, the current flows through the protection diode 9 to the common line (
V, ) 10, the potential of the gate signal line 5 hardly decreases.
すなわち、静電気によりゲート信号Ａ！５、ソース信号
線６およびボンディングパッド８は常時、同電位になっ
ているから、ＴＰＴ４や、垂直走査回路２、水平走査回
路３等の静電破壊が防止されることになる。In other words, the gate signal A! due to static electricity! 5. Since the source signal line 6 and the bonding pad 8 are always at the same potential, electrostatic damage to the TPT 4, vertical scanning circuit 2, horizontal scanning circuit 3, etc. is prevented.
なお、製品を液晶表示装置として出荷する場合は、たと
えばレーザカッタ等により短絡ｆｉ１２をカットし、共
通ライン（ＶＷ）１０を必要な駆動電圧の一番低い、た
とえばＯｖに設定し、また、共通ライン（Ｖ ｏ’）
１１は必要な駆動電圧の一番高い、たとえば２０Ｖに設
定しておけば、全ての保護ダイオード９は逆バイアス状
態になるから、ゲート信号線５、ソース信号線６やボン
ディングパッド８には、共通ライン（ＶＯ）ｔＯ１共通
ライン（ＶＤ）１１から不要な電流は流れない、すなわ
ち、液晶表示には支障はない。When shipping the product as a liquid crystal display device, cut the short circuit fi12 using a laser cutter or the like, set the common line (VW) 10 to the lowest required drive voltage, for example Ov, and (V o')
If 11 is set to the highest required drive voltage, for example 20V, all protection diodes 9 will be in a reverse bias state, so the gate signal line 5, source signal line 6 and bonding pad 8 have a common voltage. No unnecessary current flows from the line (VO) tO1 common line (VD) 11, that is, there is no problem with the liquid crystal display.
また、１にΩないし１０にΩの保護抵抗１３が共通ライ
ン（Ｖｓ）１０と共通ライン（ＶＤ）１１間に接続され
ているから、それにＯｖと２０ｖの電圧をそれぞれ印加
することができ、したがって、短絡線１２をカットする
必要なく、製造中の垂直走査回路２または水平走査回路
３のプローブ検査等を行なうことが可能で、製造に支障
を来たすことはない。Also, since a protective resistor 13 of 1Ω to 10Ω is connected between the common line (Vs) 10 and the common line (VD) 11, voltages of Ov and 20V can be applied to it, respectively. It is possible to perform a probe test of the vertical scanning circuit 2 or horizontal scanning circuit 3 during manufacture without the need to cut the shorting wire 12, and the manufacturing process will not be hindered.
第２図は、保護ダイオード９を説明する図である。保護
ダイオード９は図（ａ）のように、２個のダイオード（
ＤＡ）２１．ダイオード（Ｄ、）２２の直列接続回路に
より形成され、その接続部Ｐに信号線やボンデインパッ
ド等を接続し、両端は、共通ライン（Ｖ、）ｔＯから共
通ライン（ＶＩ））１１を順方向としてそれぞれ接続さ
れる。また図（ｂ）は、ダイオードを、それぞれｎチャ
ネルＴＦＴ２１’および、ｐチャネルＴ Ｆ Ｔ ２２
’により形成した保護ダイオードの例を示し、特に図示
の例は耐圧を高くするために、マルチゲートのＴＦＴに
より形成したものを示しているが、これは単純ゲートの
ＴＰＴであってもよいことは明らかである。FIG. 2 is a diagram illustrating the protection diode 9. The protection diode 9 is composed of two diodes (
DA)21. It is formed by a series connection circuit of diodes (D, ) 22, and a signal line, bonding pad, etc. is connected to its connection part P, and both ends are connected from a common line (V, )tO to a common line (VI) 11 in order. are connected in each direction. In addition, in FIG.
In particular, the illustrated example shows one formed by a multi-gate TFT in order to increase the withstand voltage, but it is understood that this may also be a simple-gate TPT. it is obvious.
第３図は保護ダイオード９の他の例を示す模式断面図で
、ｐｉｎダイオードの断面を示しており。FIG. 3 is a schematic cross-sectional view showing another example of the protection diode 9, and shows a cross section of a pin diode.
このようなｐｉｎダイオードも保護ダイオード９に使用
することが可能である。Such a pin diode can also be used as the protection diode 9.
以上本発明を実施例により説明したが、保護ダイオード
は上述したＴＰＴやｐｉｎダイオードに限定されるもの
ではなく、整流特性を有する素子であれば利用できるこ
と、また、上述の実施例は走査回路を内蔵したアクティ
ブ・マトリクス方式の液晶表示装置に適用したが、走査
回路を内蔵しない、アモルファスシリコンＴＰＴを用い
たアクティブ・マトリクス方式の液晶表示装置にも適用
されること等はいうまでもない。Although the present invention has been described above with reference to embodiments, the protection diode is not limited to the above-mentioned TPT or PIN diode, and any element having rectifying characteristics can be used. Although the present invention has been applied to an active matrix type liquid crystal display device, it goes without saying that the present invention can also be applied to an active matrix type liquid crystal display device using amorphous silicon TPT without a built-in scanning circuit.
（発明の効果）
以上、説明して明らかなように本発明は、走査回路のボ
ンディングパッド、ゲート信号線、ソース信号線の全て
を、ダイオードを２個直列接続してなる保護ダイオード
の中間に接続し、その両地端を共通ラインに接続した状
態にさせて製造するから、ＴＰＴの端子が常に同電位に
おいて製造され、したがってＴＰＴの静電破壊を生せず
、そのため製造の歩留りが向上するとともに、画素が破
壊されない品質の高い液晶表示装置の提供が可能な効果
がある。(Effects of the Invention) As is clear from the above explanation, the present invention connects all the bonding pads, gate signal lines, and source signal lines of a scanning circuit to the middle of a protection diode formed by connecting two diodes in series. However, since the terminals of the TPT are manufactured with both ends connected to a common line, the terminals of the TPT are always manufactured at the same potential, so there is no electrostatic damage to the TPT, which improves the manufacturing yield. , it is possible to provide a high-quality liquid crystal display device in which pixels are not destroyed.
第１図は本発明の一実施例を説明する液晶表示装置の回
路構成図、第２図、第３図は説明補助図で保護ダイオー
ドの例を示す図、第４図は従来の液晶表示装置の回路構
成図である。
１ ・・・表示部、 ２・・・垂直走査回路、３ ・・
・水平走査回路、 ４ ・・・薄膜トランジスタ（ＴＰ
Ｔと記す）、 ５ ・・・ゲート信号線、 ６ ・・・
ソース信号線、 ７ ・・・画素電極、 ８ ・・・ボ
ンディングパッド、９ ・・・保護ダイオード、１ｏ・
・・共通ライン（Ｖ＊＞、１１・・・共通ライン（ｖｎ
）、１２・・・短絡線、１３・・・保護抵抗、２１・・
・ダイオード（ＤＡ）、２２・・・ダイオード（ａｍ）
、２１’ −ｎチャネルＴＰＴ、２２’ −ｐチャネル
ＴＰＴ。
特許出願人 松下電子工業株式会社
第
図
第
図
第
図
８ ホ゛ンテ１ンク゛パット。FIG. 1 is a circuit configuration diagram of a liquid crystal display device illustrating an embodiment of the present invention, FIGS. 2 and 3 are auxiliary diagrams showing examples of protection diodes, and FIG. 4 is a diagram of a conventional liquid crystal display device. FIG. 1...Display section, 2...Vertical scanning circuit, 3...
・Horizontal scanning circuit, 4...Thin film transistor (TP
), 5... gate signal line, 6...
Source signal line, 7... Pixel electrode, 8... Bonding pad, 9... Protection diode, 1o.
...Common line (V*>, 11...Common line (vn
), 12... Short circuit wire, 13... Protective resistor, 21...
・Diode (DA), 22...Diode (am)
, 21'-n-channel TPT, 22'-p-channel TPT. Patent applicant: Matsushita Electronics Co., Ltd. Figure 8 Font 1 link pad.
Claims (2)
短絡させた２本の共通ラインを形成し、かつ、ゲート信
号線、ソース信号線、及びそれらの信号線の走査回路の
ボンディングパッドの全てを、整流特性を有する素子２
個を同一整流方向に直列接続してなる、両端が上記２本
の共通ラインにそれぞれ順方向に接続した保護ダイオー
ドの、上記直列接続部に接続して製造することを特徴と
する液晶表示装置の製造方法。(1) Two common lines short-circuited by a short-circuit line are formed on the substrate constituting the liquid crystal display device, and bonding pads for gate signal lines, source signal lines, and scanning circuits of these signal lines are formed. Element 2 with rectifying characteristics
A liquid crystal display device, characterized in that the liquid crystal display device is manufactured by connecting to the series connection portion of a protection diode formed by connecting two protective diodes in series in the same rectification direction, both ends of which are connected to the two common lines in the forward direction, respectively. Production method.
ｎダイオード、ｎまたはｐチャネル薄膜トランジスタの
何れか１つであることを特徴とする請求項（１）記載の
液晶表示装置の製造方法。(2) Elements with rectification characteristics include rectifier diodes, pi
2. The method of manufacturing a liquid crystal display device according to claim 1, wherein the thin film transistor is one of an n diode and an n or p channel thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1136084A JPH032838A (en) | 1989-05-31 | 1989-05-31 | Production of liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1136084A JPH032838A (en) | 1989-05-31 | 1989-05-31 | Production of liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH032838A true JPH032838A (en) | 1991-01-09 |
Family
ID=15166878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1136084A Pending JPH032838A (en) | 1989-05-31 | 1989-05-31 | Production of liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH032838A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073516A (en) * | 1991-02-28 | 1991-12-17 | Texas Instruments Incorporated | Selective epitaxial growth process flow for semiconductor technologies |
| US5233448A (en) * | 1992-05-04 | 1993-08-03 | Industrial Technology Research Institute | Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection |
| WO1997005654A1 (en) * | 1995-07-31 | 1997-02-13 | Litton Systems Canada Limited | Semiconductor switch array with electrostatic discharge protection and method of fabricating |
| US6088073A (en) * | 1997-04-14 | 2000-07-11 | Casio Computer Co., Ltd. | Display device with destaticizing elements and an electrostatic pulse delaying element connected to each of the destaticizing elements |
| KR100270468B1 (en) * | 1995-10-03 | 2000-11-01 | 야스카와 히데아키 | A fabrication method a thin film element, active matrix substrate, lcd and prevent method static destruction of an active matrix device in lcd |
| JP2001021918A (en) * | 1999-07-07 | 2001-01-26 | Hitachi Ltd | Liquid crystal display device |
| JP2002057313A (en) * | 2000-08-09 | 2002-02-22 | Canon Inc | Photoelectric conversion device |
| KR100495810B1 (en) * | 1997-09-25 | 2005-09-15 | 삼성전자주식회사 | LCD display with static electricity protection circuit |
| KR100502100B1 (en) * | 1997-10-28 | 2005-11-01 | 삼성전자주식회사 | LCD panel with shorting bar for short fault detection |
| KR100552299B1 (en) * | 1998-09-16 | 2006-05-24 | 삼성전자주식회사 | Liquid crystal display and inspection method thereof |
| JP2006517678A (en) * | 2003-02-14 | 2006-07-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electronic device having electrostatic discharge protection circuit |
| KR100646777B1 (en) * | 1998-06-05 | 2007-02-05 | 삼성전자주식회사 | Liquid crystal display device having static electricity protection circuit and display inspection method using static electricity protection circuit |
| KR100712109B1 (en) * | 2004-12-10 | 2007-04-27 | 삼성에스디아이 주식회사 | Organic electroluminescence display device and methd for fabricating thereof |
| CN1332246C (en) * | 1997-03-26 | 2007-08-15 | 夏普株式会社 | Display panel |
| JP2009290171A (en) * | 2008-06-02 | 2009-12-10 | Epson Imaging Devices Corp | Solid-state imaging device |
| US8355015B2 (en) | 2004-05-21 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device including a diode electrically connected to a signal line |
| WO2020039554A1 (en) * | 2018-08-23 | 2020-02-27 | シャープ株式会社 | Active matrix substrate, display device, and motherboard |
-
1989
- 1989-05-31 JP JP1136084A patent/JPH032838A/en active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073516A (en) * | 1991-02-28 | 1991-12-17 | Texas Instruments Incorporated | Selective epitaxial growth process flow for semiconductor technologies |
| US5233448A (en) * | 1992-05-04 | 1993-08-03 | Industrial Technology Research Institute | Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection |
| WO1997005654A1 (en) * | 1995-07-31 | 1997-02-13 | Litton Systems Canada Limited | Semiconductor switch array with electrostatic discharge protection and method of fabricating |
| US6013923A (en) * | 1995-07-31 | 2000-01-11 | 1294339 Ontario, Inc. | Semiconductor switch array with electrostatic discharge protection and method of fabricating |
| KR100270468B1 (en) * | 1995-10-03 | 2000-11-01 | 야스카와 히데아키 | A fabrication method a thin film element, active matrix substrate, lcd and prevent method static destruction of an active matrix device in lcd |
| CN1332246C (en) * | 1997-03-26 | 2007-08-15 | 夏普株式会社 | Display panel |
| US6088073A (en) * | 1997-04-14 | 2000-07-11 | Casio Computer Co., Ltd. | Display device with destaticizing elements and an electrostatic pulse delaying element connected to each of the destaticizing elements |
| KR100495810B1 (en) * | 1997-09-25 | 2005-09-15 | 삼성전자주식회사 | LCD display with static electricity protection circuit |
| KR100502100B1 (en) * | 1997-10-28 | 2005-11-01 | 삼성전자주식회사 | LCD panel with shorting bar for short fault detection |
| KR100646777B1 (en) * | 1998-06-05 | 2007-02-05 | 삼성전자주식회사 | Liquid crystal display device having static electricity protection circuit and display inspection method using static electricity protection circuit |
| KR100552299B1 (en) * | 1998-09-16 | 2006-05-24 | 삼성전자주식회사 | Liquid crystal display and inspection method thereof |
| JP2001021918A (en) * | 1999-07-07 | 2001-01-26 | Hitachi Ltd | Liquid crystal display device |
| JP4630432B2 (en) * | 2000-08-09 | 2011-02-09 | キヤノン株式会社 | Photoelectric conversion device |
| JP2002057313A (en) * | 2000-08-09 | 2002-02-22 | Canon Inc | Photoelectric conversion device |
| JP2006517678A (en) * | 2003-02-14 | 2006-07-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electronic device having electrostatic discharge protection circuit |
| KR101025412B1 (en) * | 2003-02-14 | 2011-03-28 | 티피오 홍콩 홀딩 리미티드 | Display device with electrostatic discharge protection circuitry |
| US10115350B2 (en) | 2004-05-21 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having rectifying elements connected to a pixel of a display device |
| US8355015B2 (en) | 2004-05-21 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device including a diode electrically connected to a signal line |
| US8917265B2 (en) | 2004-05-21 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device including a current source and a diode electrically connected at an output of the current source |
| US9536937B2 (en) | 2004-05-21 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a rectifying element connected to a pixel of a display device |
| KR100712109B1 (en) * | 2004-12-10 | 2007-04-27 | 삼성에스디아이 주식회사 | Organic electroluminescence display device and methd for fabricating thereof |
| JP2009290171A (en) * | 2008-06-02 | 2009-12-10 | Epson Imaging Devices Corp | Solid-state imaging device |
| WO2020039554A1 (en) * | 2018-08-23 | 2020-02-27 | シャープ株式会社 | Active matrix substrate, display device, and motherboard |
| US20210225881A1 (en) * | 2018-08-23 | 2021-07-22 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and motherboard |
| US11908873B2 (en) | 2018-08-23 | 2024-02-20 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and motherboard |
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