JPH03280560A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH03280560A JPH03280560A JP8216890A JP8216890A JPH03280560A JP H03280560 A JPH03280560 A JP H03280560A JP 8216890 A JP8216890 A JP 8216890A JP 8216890 A JP8216890 A JP 8216890A JP H03280560 A JPH03280560 A JP H03280560A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- lead
- resin
- heat dissipating
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000011347 resin Substances 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に発熱する半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device that generates heat.
般に半導体装置はプリント基板などに取付けられ、電気
回路を構成するように使われる。Semiconductor devices are generally attached to printed circuit boards and used to form electrical circuits.
従来の半導体装置は第２図（ａ） 、 （ｂ）に示すよ
うに、ＩＣチップ搭載部５に搭載されたＩＣチップ１の
ポンディングパッド６とリード２とがボンディングワイ
ヤ４を介して電気的に接続され、ＩＣチップ１及びＩＣ
チッグｌとリード２との電気的接続箇所か樹脂部３にて
気密封止されている。In the conventional semiconductor device, as shown in FIGS. 2(a) and 2(b), the bonding pads 6 of the IC chip 1 mounted on the IC chip mounting part 5 and the leads 2 are electrically connected via the bonding wires 4. connected to IC chip 1 and IC
The electrical connection point between the tip 1 and the lead 2 is hermetically sealed with a resin part 3.
この種の半導体装置では、ＩＣチップ１の熱を樹脂部３
の外部に放熱するために、ＩＣチップ搭載部５の下面に
熱伝導率の高い樹脂を付着してこの樹脂を通して放熱を
行うか、又は第３図に示すようにＩＣチップ搭載部５に
放熱板７を設けた構造のものが一般的である。In this type of semiconductor device, the heat of the IC chip 1 is transferred to the resin part 3.
In order to radiate heat to the outside, a resin with high thermal conductivity is attached to the bottom surface of the IC chip mounting part 5 and the heat is radiated through this resin, or a heat sink is attached to the IC chip mounting part 5 as shown in FIG. 7 is common.
しかしながら、熱伝導率の高い樹脂を介して放熱を行う
場合には、樹脂の強度が熱により低下してしまい、寿命
が短縮されてしまうという欠点があった。However, when heat is dissipated through a resin with high thermal conductivity, the strength of the resin decreases due to heat, resulting in a shortened lifespan.
また、第３図に示す構造のものでは、放熱板７が必要と
なるため、外形寸法が大型化されてしまい、小型化する
上での支障を来たすという欠点があった。Furthermore, the structure shown in FIG. 3 requires a heat sink 7, which increases the external dimensions, which poses a problem in downsizing.
本発明の目的は、前記課題を解決した半導体装置を提供
することにある。An object of the present invention is to provide a semiconductor device that solves the above problems.
前記目的を達成するため、本発明に係る半導体装置にお
いては、ＩＣチップと、リードと、樹脂部とを有する半
導体装置であって、
前記ＩＣチップは、ＩＣチップ搭載部に搭載されるもの
であり、
前記リードは、前記ＩＣチップのボンディングパッドに
ボンディングワイヤを介して電気的に接続されるもので
あり、
前記樹脂部は、ＩＣチップ及びＩＣチップとリードとの
電気的な接続箇所を気密封止するものであり、
さらに、前記リードは、樹脂部内のＩＣチップに向けて
延在し、非接触状態でＩＣチップの放熱を行う放熱部を
一体に有するものである。In order to achieve the above object, a semiconductor device according to the present invention includes an IC chip, a lead, and a resin part, wherein the IC chip is mounted on an IC chip mounting part. , the lead is electrically connected to a bonding pad of the IC chip via a bonding wire, and the resin part hermetically seals the IC chip and the electrical connection point between the IC chip and the lead. Furthermore, the lead integrally has a heat dissipation part that extends toward the IC chip within the resin part and dissipates heat from the IC chip in a non-contact state.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図（ａ）は本発明の一実施例を示す平面図、第１図
［ｂ）は第１図（ａ）のＡ−Ａ’線断面図である。FIG. 1(a) is a plan view showing an embodiment of the present invention, and FIG. 1(b) is a sectional view taken along the line AA' in FIG. 1(a).
図において、本発明は、樹脂部３内のＩＣチップ１が放
出する熱を、熱伝導率の高いリード２を利用して外部に
放熱することを意図したものである。In the figure, the present invention is intended to radiate heat emitted by an IC chip 1 within a resin portion 3 to the outside by using a lead 2 having high thermal conductivity.
すなわち、ＩＣチップ１の各ポンディングパッド６にそ
れぞれ接続される各リード２は、ＩＣチップｌが搭載さ
れたＩＣチップ搭載部５の下面まで延在し、かつその下
面に隣接して平行に配設された放熱部２ａを一体に形成
したものである。各リード２は、放熱部２ａの基部側で
ＩＣチップ１のポンディングパッド６とボンディングワ
イヤ４を介して電気的に接続され、その放熱部２ａは樹
脂部３内にＩＣチップ１と非接触状態に内装される。ま
た、各リード２の他端は樹脂部３より外部に引圧されて
いる。That is, each lead 2 connected to each bonding pad 6 of the IC chip 1 extends to the lower surface of the IC chip mounting portion 5 on which the IC chip 1 is mounted, and is arranged adjacent to and parallel to the lower surface. The provided heat dissipation section 2a is integrally formed. Each lead 2 is electrically connected to the bonding pad 6 of the IC chip 1 via the bonding wire 4 on the base side of the heat dissipation part 2a, and the heat dissipation part 2a is in a non-contact state with the IC chip 1 within the resin part 3. will be decorated. Further, the other end of each lead 2 is pulled outward from the resin portion 3.
したがって、ＩＣチップ１が放出する熱は、リード２の
放熱部２ａにて受熱され、熱伝導率の高いリード２を通
して樹脂部３の外部に放出される。Therefore, the heat emitted by the IC chip 1 is received by the heat radiation part 2a of the lead 2, and is released to the outside of the resin part 3 through the lead 2 having high thermal conductivity.
以上説明したように、本発明はＩＣチップからの熱を熱
伝導率の高いリードを介して放出するため、樹脂の耐久
性を高めることができる。また、既存のリードを利用し
て放熱を行うため、放熱板を別途装備する構造に比して
その外形寸法を小型化できるという効果を有する。As explained above, since the present invention releases heat from an IC chip through the leads having high thermal conductivity, it is possible to improve the durability of the resin. Furthermore, since heat is radiated using existing leads, the external dimensions can be reduced in size compared to a structure in which a heat sink is separately provided.
第１図（ａ）は本発明の一実施例を示す平面図、第１図
（ｂ）は第１図（ａ）のＡ−Ａ’線断面図、第２図（ａ
）は従来例を示す平面図、第２図（ｂ）は第２図（ａ）
のＢ−Ｂ′線断面図、第３図は放熱板を装備した従来例
を示す断面図である。
１・・・ＩＣチップ ２・・・リード２ａ・・・
放熱部 ３・・・樹脂部４・・・ボンデインク
ワイヤ
５・・・ＩＣチップ搭載部FIG. 1(a) is a plan view showing one embodiment of the present invention, FIG. 1(b) is a sectional view taken along the line AA' in FIG. 1(a), and FIG.
) is a plan view showing the conventional example, and Fig. 2(b) is Fig. 2(a).
FIG. 3 is a sectional view showing a conventional example equipped with a heat sink. 1...IC chip 2...Lead 2a...
Heat radiation part 3...Resin part 4...Bonde ink wire 5...IC chip mounting part
Claims (1)
体装置であって、 前記ＩＣチップは、ＩＣチップ搭載部に搭載されるもの
であり、 前記リードは、前記ＩＣチップのボンディングパッドに
ボンディングワイヤを介して電気的に接続されるもので
あり、 前記樹脂部は、ＩＣチップ及びＩＣチップとリードとの
電気的な接続箇所を気密封止するものであり、 さらに、前記リードは、樹脂部内のＩＣチップに向けて
延在し、非接触状態でＩＣチップの放熱を行う放熱部を
一体に有することを特徴とする半導体装置。(1) A semiconductor device having an IC chip, a lead, and a resin part, wherein the IC chip is mounted on an IC chip mounting part, and the lead is bonded to a bonding pad of the IC chip. electrically connected via a wire; the resin part hermetically seals the IC chip and the electrical connection points between the IC chip and the leads; What is claimed is: 1. A semiconductor device characterized by integrally having a heat dissipation part that extends toward an IC chip and dissipates heat from the IC chip in a non-contact state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8216890A JPH03280560A (en) | 1990-03-29 | 1990-03-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8216890A JPH03280560A (en) | 1990-03-29 | 1990-03-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03280560A true JPH03280560A (en) | 1991-12-11 |
Family
ID=13766903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8216890A Pending JPH03280560A (en) | 1990-03-29 | 1990-03-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03280560A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753977A (en) * | 1996-03-22 | 1998-05-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and lead frame therefor |
-
1990
- 1990-03-29 JP JP8216890A patent/JPH03280560A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753977A (en) * | 1996-03-22 | 1998-05-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and lead frame therefor |
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