JPH03278523A - Lamp-system heat-treatment apparatus of semiconductor wafer - Google Patents
Lamp-system heat-treatment apparatus of semiconductor waferInfo
- Publication number
- JPH03278523A JPH03278523A JP7987990A JP7987990A JPH03278523A JP H03278523 A JPH03278523 A JP H03278523A JP 7987990 A JP7987990 A JP 7987990A JP 7987990 A JP7987990 A JP 7987990A JP H03278523 A JPH03278523 A JP H03278523A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer
- heat
- heat treatment
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000010438 heat treatment Methods 0.000 title claims abstract description 58
- 230000005855 radiation Effects 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 80
- 238000012545 processing Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000012546 transfer Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体工業における、半導体ウェーハの熱処理
装置に関し、特に拡散・酸化・アニール・成膜工程に使
用する半導体ウェーハのランプ式熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat treatment apparatus for semiconductor wafers in the semiconductor industry, and more particularly to a lamp type heat treatment apparatus for semiconductor wafers used in diffusion, oxidation, annealing, and film formation steps.
従来、この種の半導体ウェーハのランプ式熱処理装置は
、第３図に示す１ｍ−に半導体ウェーハ１を内面を鏡面
処理に行った金属製チャンバー２内に水平に保持し、上
部に設置したハロゲン又はキセノン等を封入した加熱ラ
ンプ３の光を加熱源とし、透明な石英板４を透過する光
によって半導体ウェーハ１を加熱する。通常、金属製チ
ャンバー２の下部には半導体ウェーハの温度測定の為に
半導体ウェーハ温度測定用放射温度計５（以下、放射温
度計と略す）が設けられ、半導体ウェーハ１が加熱ラン
プ３により加熱され、金属製チャンバー下面のフィルタ
ー６を透過した半導体ウェーハ１の放射赤外線をモニタ
ーし、半導体ウェーハ１の温度を測定する。又、フィル
ター６は金属製チギンバー２内を外気と遮断する為と、
温度測定に用いる波長を選択する為にシリコン薄膜、フ
ッ化カルシューム等の材質が用いられる。半導体ウェー
ハ１は、上部からの加熱ランプ３による放射と、加熱ラ
ンプ３の金属チャンバー２内の反射による赤外線で加熱
される。半導体ウェーハ１表面と裏面を均一にランプ加
熱した場合半導体ウェーハ１の中心部と外周部では、熱
伝達が異なり、外周部が中心部より低温となる。半導体
ウェーハ１の中心部では隣接部も加熱されているが、外
周部は加熱されていない。従って、半導体ウェーハ１を
均一に加熱する為に、ランプ光の金属チャンバ−２鏡面
反射による熱供給を中心部より外周部に多くする様に、
金属チャンバー２形状を設計する。半導体ウェーハ１の
熱処理は、金属チャンバー２内に、ウェーハ搬送装置９
によって半導体ウェーハ１を運搬し、金属チャンバー２
内に設置された半導体ウェーハ支持ピン１０上にセット
される。次に、金属チャンバー２内をガス供給器１１に
より、熱処理雰囲気にした後、所定の昇温速度で半導体
ウェーハ１を加熱ランプ３により加熱する。半導体ウェ
ーハ１の温度コントロールは、放射温度計５による出力
をＰ、１．Ｄ制御等を用いて、加熱ランプ３の出力を制
御する閉ループＭ＃ｌが一般的に行われている。Conventionally, this kind of semiconductor wafer lamp heat treatment apparatus has been designed to hold a semiconductor wafer 1 horizontally in a metal chamber 2 whose inner surface has been mirror-treated, and a halogen or The semiconductor wafer 1 is heated by light transmitted through a transparent quartz plate 4 using light from a heating lamp 3 filled with xenon or the like as a heat source. Usually, a radiation thermometer 5 for measuring the temperature of the semiconductor wafer (hereinafter referred to as radiation thermometer) is provided at the bottom of the metal chamber 2 to measure the temperature of the semiconductor wafer, and the semiconductor wafer 1 is heated by the heating lamp 3. The temperature of the semiconductor wafer 1 is measured by monitoring the infrared radiation of the semiconductor wafer 1 that has passed through the filter 6 on the lower surface of the metal chamber. In addition, the filter 6 is used to isolate the inside of the metal chigging bar 2 from outside air.
Materials such as silicon thin film and calcium fluoride are used to select the wavelength used for temperature measurement. The semiconductor wafer 1 is heated by radiation from the heating lamp 3 from above and infrared rays reflected from the heating lamp 3 within the metal chamber 2 . When the front and back surfaces of the semiconductor wafer 1 are uniformly heated by lamps, heat transfer is different between the center and the outer periphery of the semiconductor wafer 1, and the outer periphery becomes lower in temperature than the center. Adjacent areas at the center of the semiconductor wafer 1 are also heated, but the outer periphery is not heated. Therefore, in order to uniformly heat the semiconductor wafer 1, more heat is supplied to the outer periphery than to the center by specular reflection of the lamp light into the metal chamber 2.
Design two metal chamber shapes. The heat treatment of the semiconductor wafer 1 is carried out using a wafer transfer device 9 in the metal chamber 2.
The semiconductor wafer 1 is transported by the metal chamber 2.
It is set on semiconductor wafer support pins 10 installed in the interior of the semiconductor wafer. Next, after a heat treatment atmosphere is created in the metal chamber 2 by the gas supply device 11, the semiconductor wafer 1 is heated by the heating lamp 3 at a predetermined temperature increase rate. To control the temperature of the semiconductor wafer 1, the output from the radiation thermometer 5 is set to P, 1. A closed loop M#l that controls the output of the heating lamp 3 using D control or the like is generally performed.
上述した従来の半導体ウェーハのランプ式熱処理装置は
、被熱処理半導体ウェーハの大きさ、及び熱処理温度が
異なる場合、半導体ウェーハの裏面へのランプ反射光の
供給量、半導体ウェーハのチャンバー内雰囲気への熱伝
達、半導体ウェーハ温度による熱反射の変化も異なる為
、それぞれの条件で、半導体ウェーハ熱処理の面内均一
性を得るには半導体ウェーハと加熱ランプの距離を調整
する必要が有った。The above-mentioned conventional lamp-type heat treatment equipment for semiconductor wafers differs in the size of the semiconductor wafer to be heat-treated and the heat treatment temperature, the amount of lamp reflected light supplied to the back surface of the semiconductor wafer, and the amount of heat applied to the atmosphere inside the chamber of the semiconductor wafer. Since changes in heat transfer and heat reflection depending on the semiconductor wafer temperature also differ, it is necessary to adjust the distance between the semiconductor wafer and the heating lamp under each condition to obtain uniformity in the semiconductor wafer heat treatment.
又、半導体ウェーハと加熱ランプの距離が変化した場合
は、半導体ウェーハの温度モニター用放射温度計の構成
も必要となり、熱処理条件の変更に対して装置の調整に
多くの時間を要するという欠点をもっていた。Additionally, if the distance between the semiconductor wafer and the heating lamp changes, it is necessary to configure a radiation thermometer to monitor the temperature of the semiconductor wafer, which has the drawback of requiring a lot of time to adjust the equipment in response to changes in heat treatment conditions. .
本発明の目的は、半導体ウェーハの大きさ及び熱処理温
度が異なる場合でも、事前に半導体ウェーハの熱処理条
件を定めておけば装置を停止再調整をすることなく半導
体ウェーハを均一に熱処理することができる半導体ウェ
ーハのランプ式熱処理装置を提供することにある。An object of the present invention is that even if the size of the semiconductor wafer and the heat treatment temperature are different, if the heat treatment conditions for the semiconductor wafer are determined in advance, the semiconductor wafer can be uniformly heat treated without having to stop and readjust the equipment. An object of the present invention is to provide a lamp-type heat treatment apparatus for semiconductor wafers.
本発明の半導体ウェーハのランプ式熱処理装置は、熱処
理チャンバーと、その熱処理チャンバーにガスを供給す
るガス供給器と、半導体ウェーハを所定状態に保持する
半導体ウェーハ支持ピンと半導体ウェーハとの関係位置
を固定して設置された半導体ウェーハの処理温度測定用
の放射温度計とを含み熱処理チャンバーの下部に設置さ
れたユニットと、半導体ウェーハを加熱する加熱ランプ
と、前記半導体ウェーハと加熱ランプの距離を半導体ウ
ェーハと放射温度計の距離を一定に保ちながら処理温度
に応じて変えられる機構とを含むことを特徴として構成
される。The lamp-type heat treatment apparatus for semiconductor wafers of the present invention fixes the relative positions of a heat treatment chamber, a gas supply device that supplies gas to the heat treatment chamber, semiconductor wafer support pins that hold the semiconductor wafer in a predetermined state, and the semiconductor wafer. A unit installed at the bottom of the heat treatment chamber includes a radiation thermometer for measuring the processing temperature of the semiconductor wafer installed in the chamber, a heating lamp for heating the semiconductor wafer, and a distance between the semiconductor wafer and the heating lamp. The apparatus is characterized by including a mechanism that can change the distance between the radiation thermometer and the radiation thermometer according to the processing temperature while keeping the distance constant.
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例の縦断面図である０本実施例では、
半導体ウェーハ搬送機９により、金属チャンバー２内に
運搬された半導体ウェーハ１がガス供給器１１により金
属チャンバー２内を空気から所定の熱処理雰囲気に置換
した後、熱処理を行い、半導体ウェーハ１の大きさ、熱
処理温度により半導体ウェーハ１と加熱ランフ３の距離
を調節する。但し、半導体ウェーハ１と放射温度計５の
距離は変わらない様に半導体ウェーハ支持ピン１０、放
射温度計５とフィルタ６を１つのユニットとして金属チ
ャンバ−２下部に設置し、半導体ウェーハエレベータ−
１１により半導体ウェーハ１を保持した状態で加熱ラン
プ３の距離を変える事ができる。又、初期調整時に各条
件の半導体ウェーハ１の熱処理を行い、各処理温度、各
半導体ウェーハの大きさによる熱処理時の面内均一の最
適条件の半導体ウェーハ１と加熱ランプの距離をシステ
ムコントローラに記憶させる。熱処理温度が高い場合、
半導体ウェーハ１の外周部の放熱が大きい為、外周部へ
の熱供給を中心部よりも大きくする必要がある。従って
、半導体ウェーハ１と加熱ランプ３の距離を離し、半導
体ウェーハ１裏面中心部への熱放射の供給を減少させ、
半導体ウェーハ１の処理温度が低い場合は、逆に半導体
ウェーハ１と加熱ランプ３の距離を近づける。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of one embodiment of the present invention. In this embodiment,
The semiconductor wafer 1 is transported into the metal chamber 2 by the semiconductor wafer transport machine 9, and after replacing the air in the metal chamber 2 with a predetermined heat treatment atmosphere by the gas supply device 11, the semiconductor wafer 1 is subjected to heat treatment to determine the size of the semiconductor wafer 1. , the distance between the semiconductor wafer 1 and the heating lamp 3 is adjusted depending on the heat treatment temperature. However, in order to keep the distance between the semiconductor wafer 1 and the radiation thermometer 5 unchanged, the semiconductor wafer support pin 10, the radiation thermometer 5, and the filter 6 are installed as one unit at the bottom of the metal chamber 2, and the semiconductor wafer elevator is installed.
11 allows the distance of the heating lamp 3 to be changed while holding the semiconductor wafer 1. Also, during initial adjustment, the semiconductor wafer 1 is heat-treated under each condition, and the distance between the semiconductor wafer 1 and the heating lamp under the optimal conditions for in-plane uniformity during heat treatment at each processing temperature and the size of each semiconductor wafer is stored in the system controller. let If the heat treatment temperature is high,
Since heat dissipation from the outer periphery of the semiconductor wafer 1 is large, it is necessary to supply more heat to the outer periphery than to the center. Therefore, the distance between the semiconductor wafer 1 and the heating lamp 3 is increased, and the supply of heat radiation to the center of the back surface of the semiconductor wafer 1 is reduced.
Conversely, when the processing temperature of the semiconductor wafer 1 is low, the distance between the semiconductor wafer 1 and the heating lamp 3 is reduced.
半導体ウェーハ１の大きさが大きい場合は、半導体ウェ
ーハ１裏面中心部への熱供給が少なくなり、半導体ウェ
ーハ１と加熱ランプ３距離を近づけ、半導体ウェーハ１
の大きさが小さい場合は、逆に半導体ウェーハ１と加熱
ランプ３の距離を離す。When the size of the semiconductor wafer 1 is large, the heat supply to the center of the back surface of the semiconductor wafer 1 is reduced, the distance between the semiconductor wafer 1 and the heating lamp 3 is brought closer, and the semiconductor wafer 1 is
If the size is small, on the other hand, the distance between the semiconductor wafer 1 and the heating lamp 3 is increased.
以上説明した様に本発明は、半導体ウェーハのランプ式
熱処理装置の半導体ウェーハの熱処理装置内における被
処理高さを変化させる事により熱処理する半導体ウェー
ハの大きさ及び熱処理温度が異なる場合でも、事前に半
導体ウェーハの熱処理条件を求めておくことにより、装
置を停止することなく半導体ウェーハを均一に熱処理す
る事ができる。As explained above, the present invention enables a semiconductor wafer to be heat-treated even when the size and heat treatment temperature of the semiconductor wafer to be heat-treated are different by changing the height of the processed object in the semiconductor wafer heat-treating apparatus of the semiconductor wafer lamp-type heat-treating apparatus. By determining the heat treatment conditions for the semiconductor wafer in advance, the semiconductor wafer can be uniformly heat treated without stopping the apparatus.
第１図は本発明の半導体ウェーハのランプ式熱処理装置
の一実施例の縦断面図、第２図は第１図のＡ−Ａ断面図
、第３図は従来の半導体ウェーハのランプ式熱処理装置
の一例の断面図である。FIG. 1 is a longitudinal cross-sectional view of an embodiment of the lamp-type heat treatment apparatus for semiconductor wafers of the present invention, FIG. 2 is a cross-sectional view taken along the line A-A in FIG. It is a sectional view of an example.
Claims (1)
給するガス供給器と、半導体ウェーハを所定状態に保持
する半導体ウェーハ支持ピンと半導体ウェーハとの関係
位置を固定して設置された半導体ウェーハの処理温度測
定用の放射温度計とを含み熱処理チャンバーの下部に設
置されたユニットと、半導体ウェーハを加熱する加熱ラ
ンプと、前記半導体ウェーハと加熱ランプの距離を半導
体ウェーハと放射温度計の距離を一定に保ちながら処理
温度に応じて変えられる機構とを含むことを特徴とする
半導体ウェーハのランプ式熱処理装置。A heat treatment chamber, a gas supply device that supplies gas to the heat treatment chamber, a semiconductor wafer support pin that holds the semiconductor wafer in a predetermined state, and a semiconductor wafer support pin for measuring the processing temperature of a semiconductor wafer installed in a fixed position relative to the semiconductor wafer. a unit installed at the bottom of the heat treatment chamber including a radiation thermometer; a heating lamp for heating the semiconductor wafer; and a unit that controls the processing temperature while keeping the distance between the semiconductor wafer and the radiation thermometer constant between the semiconductor wafer and the heating lamp. A lamp-type heat treatment apparatus for semiconductor wafers, comprising a mechanism that can be changed according to the conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7987990A JPH03278523A (en) | 1990-03-28 | 1990-03-28 | Lamp-system heat-treatment apparatus of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7987990A JPH03278523A (en) | 1990-03-28 | 1990-03-28 | Lamp-system heat-treatment apparatus of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03278523A true JPH03278523A (en) | 1991-12-10 |
Family
ID=13702523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7987990A Pending JPH03278523A (en) | 1990-03-28 | 1990-03-28 | Lamp-system heat-treatment apparatus of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03278523A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100814271B1 (en) * | 2005-04-29 | 2008-03-18 | 에이에스엠 어쌤블리 오토메이션 리미티드 | Oven for controlled heating of compounds at varying temperatures |
-
1990
- 1990-03-28 JP JP7987990A patent/JPH03278523A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100814271B1 (en) * | 2005-04-29 | 2008-03-18 | 에이에스엠 어쌤블리 오토메이션 리미티드 | Oven for controlled heating of compounds at varying temperatures |
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