JPS63188940A - System for heating by light - Google Patents

System for heating by light

Info

Publication number
JPS63188940A
JPS63188940A JP2138387A JP2138387A JPS63188940A JP S63188940 A JPS63188940 A JP S63188940A JP 2138387 A JP2138387 A JP 2138387A JP 2138387 A JP2138387 A JP 2138387A JP S63188940 A JPS63188940 A JP S63188940A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
temperature
control
detector
constitute
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2138387A
Inventor
Hajime Ichikawa
Shigeru Kato
Makoto Uehara
Masahiko Yomoto
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Abstract

PURPOSE:To execute a heating operation at a desired temperature in such a way that the temperature distribution over the whole area of a semiconductor substrate is made always uniform by a method wherein a temperature-measuring means is scanned optically on the semiconductor substrate and the temperature is measured at least at two points on the substrate. CONSTITUTION:A microcomputer 21, to which an output from a detector 13 as a radiation thermometer is input, is connected to three lamp-control units 22a-22c composed of thyristors or the like; these units transmit each control signal to lamp power supplies 23a-23c. Each lamp power supply feeds the electric power corresponding to each control signal to infrared lamps 4a-4c, 5a-5c. A pair of upper and lower infrared lamps which are situated face to face with each other on an identical radius are turned on or off under the control of an identical control signal. The infrared lamps constitute a heating means; an optical system for temperature-measuring use and the detector 13 constitute a temperature-measuring means; the microcomputer 21 and the detector 13 constitute a temperature-control means. By this setup, it is possible to control the temperature distribution of a semiconductor substrate in real time by using a single temperature-measuring means as desired.
JP2138387A 1987-01-30 1987-01-30 System for heating by light Granted JPS63188940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2138387A JPS63188940A (en) 1987-01-30 1987-01-30 System for heating by light

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2138387A JPS63188940A (en) 1987-01-30 1987-01-30 System for heating by light
US07092125 US4859832A (en) 1986-09-08 1987-09-02 Light radiation apparatus

Publications (1)

Publication Number Publication Date
JPS63188940A true true JPS63188940A (en) 1988-08-04

Family

ID=12053566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2138387A Granted JPS63188940A (en) 1987-01-30 1987-01-30 System for heating by light

Country Status (1)

Country Link
JP (1) JPS63188940A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009092676A (en) * 2001-12-26 2009-04-30 Mattson Technology Canada Inc Temperature measurement and heat-treatment method and system
JP2010225613A (en) * 2009-03-19 2010-10-07 Dainippon Screen Mfg Co Ltd Heat treatment apparatus
JP2012074430A (en) * 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd Heat treatment device and heat treatment method
US8693857B2 (en) 2007-05-01 2014-04-08 Mattson Technology, Inc. Irradiance pulse heat-treating methods and apparatus
JP2014143298A (en) * 2013-01-24 2014-08-07 Dainippon Screen Mfg Co Ltd Thermal treatment apparatus and thermal treatment method
US9279727B2 (en) 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
US9482468B2 (en) 2005-09-14 2016-11-01 Mattson Technology, Inc. Repeatable heat-treating methods and apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009092676A (en) * 2001-12-26 2009-04-30 Mattson Technology Canada Inc Temperature measurement and heat-treatment method and system
JP2011117979A (en) * 2001-12-26 2011-06-16 Mattson Technology Canada Inc Temperature measurement, heat treatment method, and system
US9482468B2 (en) 2005-09-14 2016-11-01 Mattson Technology, Inc. Repeatable heat-treating methods and apparatus
US8693857B2 (en) 2007-05-01 2014-04-08 Mattson Technology, Inc. Irradiance pulse heat-treating methods and apparatus
JP2010225613A (en) * 2009-03-19 2010-10-07 Dainippon Screen Mfg Co Ltd Heat treatment apparatus
JP2012074430A (en) * 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd Heat treatment device and heat treatment method
US9025943B2 (en) 2010-09-28 2015-05-05 SCREEN Holdings Co., Ltd. Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flashes of light
US9279727B2 (en) 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
JP2014143298A (en) * 2013-01-24 2014-08-07 Dainippon Screen Mfg Co Ltd Thermal treatment apparatus and thermal treatment method
US9607870B2 (en) 2013-01-24 2017-03-28 SCREEN Holdings Co., Ltd. Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flash of light
US9875919B2 (en) 2013-01-24 2018-01-23 SCREEN Holdings, Co. Ltd. Heat treatment method for heating substrate by irradiating substrate with flash of light

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