JPH03277424A - Manufacture of diamond-coated cutting tool - Google Patents

Manufacture of diamond-coated cutting tool

Info

Publication number
JPH03277424A
JPH03277424A JP7492290A JP7492290A JPH03277424A JP H03277424 A JPH03277424 A JP H03277424A JP 7492290 A JP7492290 A JP 7492290A JP 7492290 A JP7492290 A JP 7492290A JP H03277424 A JPH03277424 A JP H03277424A
Authority
JP
Japan
Prior art keywords
substrate
diamond layer
diamond
cutting tool
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7492290A
Other languages
Japanese (ja)
Inventor
Toshihiko Okamura
岡村 寿彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP7492290A priority Critical patent/JPH03277424A/en
Publication of JPH03277424A publication Critical patent/JPH03277424A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily manufacture even a diamond coating cutting tool having the diamond layer of whatever curved face, by adding heating and cooling heat cycles to a substrate and diamond layer and removing the substrate with its peeling off from the diamond layer subjected to brazing to the cutting tool base body. CONSTITUTION:A substrate 1 is manufactured by the material (Si) having a larger coefficient of thermal expansion than that of diamond. A diamond layer 3 in 1-300mum thickness is formed by a vapor phase composite method on this substrate 1 and the diamond layer 3 just as formed on the substrate 1 surface is subjected to brazing 5 onto a cutting tool base body 4. Then, heating and cooling heat cycles are applied on the substrate 1 and diamond layer 3 and a slippage is caused between the substrate 1 and diamond layer 3 by the difference in the thermal expansions. A desired cutting tool is thus obtained by peeling off the substrate 1 simply from the brased diamond layer 3.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、気相合成法により形成されたダ1ヤモンド
層を有するダイヤモンド被覆切削工具σ製造法に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a diamond-coated cutting tool σ having a diamond layer formed by a vapor phase synthesis method.

〔従来の技術〕[Conventional technology]

近年、超硬合金基体の表面に人工気相合成法によりダイ
ヤモンド層を被覆形成してなるダイ責モノド被覆切削工
具、たとえば、超硬合金基体に表面に人工気相合成法に
よりダイヤモンド層を初覆形成してなるコーティングチ
ップなどが提供されており、このダイヤモンド被覆切削
工具は、注としてAlまたはAI1合金の切削に用いら
れている。しかし、上記ダイヤモンド被覆切削工具のダ
イヤモンド層を厚さを厚くすればするほど超硬合金基体
の表面に対する付着強度が低下して剥離しやすくなるた
めに、十分な厚さのダイヤモンド層を被覆形成すること
はできなかった。
In recent years, diamond-coated cutting tools have been developed in which a diamond layer is formed on the surface of a cemented carbide substrate using an artificial vapor phase synthesis method, for example, a diamond layer is first coated on the surface of a cemented carbide substrate using an artificial vapor phase synthesis method. Diamond coated cutting tools are used for cutting Al or AI1 alloys. However, as the thickness of the diamond layer of the diamond-coated cutting tool increases, the adhesion strength to the surface of the cemented carbide substrate decreases, making it easier to peel off, so it is necessary to form a diamond layer of sufficient thickness. I couldn't do that.

そのため、従来は、基板表面に気相合成法により厚さ=
10〜3000Z71I11のダイヤモンド層を形成し
、上記基板表面に形成されたままのダイヤモンド層を切
削工具基体にろう付けし、ついで、上記基板を研磨また
は酸溶解により除去するダイヤモンド被覆切削工具の製
造法が提案されている。上記ろう付げに用いるろう材は
、融点か600〜1300℃のAu、Ag、Cu、およ
びTaから選ばれる1種以上を含有する高温ろう材が用
いられている(特開平1−153228号公報、特開平
L−2127137号公報参照)。
Therefore, conventionally, the thickness =
A method for manufacturing a diamond-coated cutting tool includes forming a diamond layer of 10 to 3000Z71I11, brazing the diamond layer formed on the surface of the substrate to a cutting tool base, and then removing the substrate by polishing or acid dissolution. Proposed. The brazing material used for the above brazing is a high-temperature brazing material containing one or more selected from Au, Ag, Cu, and Ta with a melting point of 600 to 1300°C (Japanese Patent Application Laid-Open No. 1-153228, (See Japanese Patent Application Laid-Open No. 2127137).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上記研磨による基板の除去は、基板とと
もにダイヤモンド被覆層をも研磨してしまう可能性があ
るので、ダイヤモンド層の厚さを必要以上に大きくしな
ければならず、ダイヤモンド層形成のための時間がかか
ってコスト高となり、特に、曲面または凹凸面を有する
ダイヤモンド層を形成したダイヤモンド被覆切削工具を
製造することは不可能に近かった。
However, removing the substrate by the above-mentioned polishing may polish the diamond coating layer as well as the substrate, so the thickness of the diamond layer must be made larger than necessary, and it takes time to form the diamond layer. This results in high costs, and in particular, it is nearly impossible to manufacture a diamond-coated cutting tool with a diamond layer formed with a curved or uneven surface.

一方、酸溶解による基板の除去方法は、酸が基板だけで
なく切削工具基体にも接触して切削工具基体をも腐蝕す
るために切削工具基体に保護膜を形成したのち酸溶解し
なければならず、また、薄いダイヤモンド層は多孔質で
あるために、上記酸は基板だけでなく、薄いダイヤモン
ド層の孔を通してろう材をも腐蝕し、ろう付けの効力を
低下せしめ、ダイヤモンド層が剥離するなどの問題点が
あった。
On the other hand, in the method of removing the substrate by acid dissolution, the acid contacts not only the substrate but also the cutting tool base and corrodes the cutting tool base, so it is necessary to form a protective film on the cutting tool base and then perform the acid dissolution. Furthermore, since the thin diamond layer is porous, the above acid corrodes not only the substrate but also the brazing material through the pores of the thin diamond layer, reducing the effectiveness of brazing and causing the diamond layer to peel off. There was a problem.

〔課題を解決するための手段〕[Means to solve the problem]

そこで、本発明者らは、これらの問題点を解決し、上記
ろう付けされたダイヤモンド層から基板を簡単に除去す
べく研究を行った結果、上記基板をダイヤモンドの熱膨
脹係数より大きな熱膨脹係数を有する物質で作製し、こ
の基板の上に気相合成法により厚さ:1〜300oμm
のダイヤモンド層を形成し、上記基板表面に形成された
ままのダイヤモンド層を切削工具基体にろう付けし、つ
いで、上記基板およびダイヤモンド層に加熱および冷却
の熱サイクルを加えると、上記基板とダイヤモンドに熱
膨脹の差により基板とダイヤモンド層の間にずれが生し
、上記基板はろう付けされたダイヤモンド層から簡単に
剥離することができるという知見を得たのである。
Therefore, the present inventors conducted research to solve these problems and easily remove the substrate from the brazed diamond layer, and found that the substrate has a coefficient of thermal expansion larger than that of diamond. Thickness: 1 to 300 μm by vapor phase synthesis method on this substrate.
The diamond layer formed on the surface of the substrate is brazed to the cutting tool base, and then a thermal cycle of heating and cooling is applied to the substrate and the diamond layer. It was discovered that the difference in thermal expansion causes a misalignment between the substrate and the diamond layer, and the substrate can easily be separated from the brazed diamond layer.

この発明は、かかる知見に基づいてなされたものであっ
て、 基板表面に気相合成法により厚さ:1〜3ooounの
ダイヤモンド層を形成し、上記基板表面に形成されたま
まのダイヤモンド層を切削工具基体にろう付けし、つい
で、上記基板を除去するダイヤモンド被覆切削工具の製
造法において、上記基板およびダイヤモンド層に、加熱
および冷却の熱サイクルを加えることにより、切削工具
基体にろう付けされたダイヤモンド層から上記基板を剥
離し除去するダイヤモンド被覆切削工具の製造法に特徴
を有するものである。
This invention was made based on this knowledge, and involves forming a diamond layer with a thickness of 1 to 300 mm on the surface of a substrate by vapor phase synthesis, and cutting the diamond layer still formed on the surface of the substrate. In a method of manufacturing a diamond-coated cutting tool in which the substrate is brazed to a tool substrate and the substrate is removed, the diamond coated cutting tool is brazed to the cutting tool substrate by subjecting the substrate and the diamond layer to a thermal cycle of heating and cooling. The present invention is characterized by a method of manufacturing a diamond-coated cutting tool in which the substrate is peeled and removed from the layer.

上述のように、加熱および冷却の熱サイクルを加えるこ
とにより、基板とダイヤモンド層の間に熱膨脹の差によ
るずれが生じて剥離するが、ろう付けに用いたろう材と
ダイヤモンド層の間の熱膨脹の差は、軟らかいろう材に
よって吸収されるため剥離は生じない。
As mentioned above, by applying thermal cycles of heating and cooling, a gap occurs between the substrate and the diamond layer due to the difference in thermal expansion, resulting in separation, but the difference in thermal expansion between the brazing material used for brazing and the diamond layer is absorbed by the soft filler metal, so no peeling occurs.

二の発明で用いる基板の材料は、ダイヤモンドの熱膨張
係数の4倍以上の熱膨張係数を有しかつダイヤモンドが
形成しやすい物質、例えば、Mo。
The material of the substrate used in the second invention is a substance having a thermal expansion coefficient four times or more that of diamond and on which diamond is easily formed, such as Mo.

Si 、A、Q、Cuなどの単体が好ましい。Simple substances such as Si, A, Q, and Cu are preferable.

〔実 施 例〕〔Example〕

つぎに、この発明を実施例に基づいて具体的に説明する
Next, the present invention will be specifically explained based on examples.

実施例 1 表面粗さかR: 0.01unになるまで鏡面研磨aX したS1基平板を用意し、この鏡面研磨したSi基平板
表面に通常の気相合成法により厚さ: 2800茄のダ
イヤモンド層を形成した。このSi基平板表面に形成さ
れたダイヤモンド層をSi基平板が付着している状態の
まま超硬合金製切削チップに、Cu:16%、    
 Zn:16%、AU:残部、 からなる金ろうを用いて、真空中、温度ニア00℃、3
分間加熱し、ろう付けを行った。ついて、上記超硬合金
製切削チップにろう付けされたS1基平板およびダイヤ
モンド層を真空中、昇温温度=20℃/分で温度:40
0℃に加熱し、ついて真空中冷却速度:80℃/分で冷
却し、この加熱および冷却を3回繰返したのち、上記S
i基平板に軽く振動を加えたところ、Si基平板を上記
ろう付けされたダイヤモンド層からSi基平板を簡単に
剥離することができた。
Example 1 An S1 substrate plate mirror-polished to a surface roughness R of 0.01 mm was prepared, and a diamond layer with a thickness of 2,800 mm was formed on the mirror-polished surface of the Si substrate plate using a normal vapor phase synthesis method. Formed. The diamond layer formed on the surface of this Si-based flat plate was applied to a cemented carbide cutting tip with the Si-based flat plate attached, Cu: 16%,
Using a gold solder consisting of Zn: 16%, AU: balance, in vacuum at a temperature of near 00°C, 3
Brazing was performed by heating for a minute. Then, the S1 base plate and the diamond layer brazed to the cemented carbide cutting tip were heated in a vacuum at a heating temperature of 20°C/min to 40°C.
After heating to 0°C and then cooling in vacuum at a cooling rate of 80°C/min, repeating this heating and cooling three times, the above S
When a slight vibration was applied to the i-based flat plate, the Si-based flat plate could be easily peeled off from the brazed diamond layer.

このろう付けされたダイヤモンド層の表面粗さを測定し
た結果、R:0.02ρであった。
The surface roughness of this brazed diamond layer was measured and found to be R: 0.02ρ.

Iax 実施例 2 第1図(a)に示されるような、曲面2をなすSi基板
1を用意し、表面粗さがR: 0.02ma+aX になるまで鏡面研磨したのち、鏡面研磨した曲面に通常
の気相合成法により第1図(b)に示されるように厚さ
: 800庫のダイヤモンド層3を形成した。このSi
基板1の表面に形成されたダイヤモンド層3をSi基板
1が付着している状態のまま第1図(C)に示されるよ
うに上記曲面と同一曲面を、有する超硬合金製切削チッ
プ4に、Cu:1B%、     Cd:15%、Zn
:16%、    Ag:残部、 からなる銀ろうを用いて、真空中、温度=670℃、3
分間加熱し、ろう付け5を行った。ついで、上記超硬合
金製切削チップ4にろう付けされたSi基板1およびダ
イヤモンド層3を、昇温速度、20℃/分で温度400
℃に真空加熱し、ついで冷却速度=80℃/分で真空冷
却し、この加熱および冷却を10回繰返したのち、上記
Si基板1に軽く振動を加えたところ、Si基板1を、
ろう付け5されたダイヤモンド層3から簡単に剥離する
ことができ、第1図(d)に示されるように、曲面を有
するダイヤモンド被覆超硬き金製切削チップ8が得られ
た。
Iax Example 2 A Si substrate 1 having a curved surface 2 as shown in FIG. 1(a) is prepared, mirror polished until the surface roughness becomes R: 0.02 ma + a As shown in FIG. 1(b), a diamond layer 3 having a thickness of 800 mm was formed by the vapor phase synthesis method. This Si
The diamond layer 3 formed on the surface of the substrate 1 is attached to a cutting tip 4 made of cemented carbide having the same curved surface as the above-mentioned curved surface as shown in FIG. 1(C) while the Si substrate 1 is still attached. , Cu: 1B%, Cd: 15%, Zn
: 16%, Ag: balance, in vacuum, temperature = 670°C, 3
Brazing 5 was performed by heating for a minute. Next, the Si substrate 1 and the diamond layer 3 brazed to the cemented carbide cutting tip 4 are heated to a temperature of 400° C. at a heating rate of 20° C./min.
℃, and then vacuum cooling at a cooling rate of 80℃/min. After repeating this heating and cooling 10 times, the Si substrate 1 was lightly vibrated.
It could be easily peeled off from the brazed diamond layer 3, and a diamond-coated ultra-hard gold cutting tip 8 having a curved surface was obtained as shown in FIG. 1(d).

このろう付けされたダイヤモンド層3の表面粗さを測定
した結果、R: 0.02虜であった。
The surface roughness of the brazed diamond layer 3 was measured and found to be R: 0.02.

flaX 実施例 3 第2図(a)に示されるような、凹凸7のある平面を形
成したSi基板1を用意し、表面粗さがR: 0.02
unになるまで鏡面研磨したのち、鏡Iax 重研磨した凹凸7のある平面に通常の気相合成法により
第2図(b)に示されるように厚さ+ 800節のダイ
ヤモンド層3を形成した。このSt基板1表面に形成さ
れたダイヤモンド層3をSi基板1が付着している状態
のまま第2図<C>に示されるように、超硬合金製切削
チップ6に、 Cu:1B%、     Cd1%、 Zn:23%、    Ag:残部、 からなる銀ろうを用いて、真空中、温度660℃、10
分間加熱し、ろう付け5を行った。上記ダイヤモンド層
3にはSi基板1の凹凸7にしたがって微少の凹凸が生
じたか、かかる微少の凹凸は、ろう付けに支障を来たす
ことはなかった。
flaX Example 3 A Si substrate 1 having a flat surface with unevenness 7 as shown in FIG. 2(a) is prepared, and the surface roughness is R: 0.02.
After mirror polishing until the surface becomes 100 mm, a diamond layer 3 with a thickness of +800 nodes was formed by ordinary vapor phase synthesis method on the mirror Iax heavily polished flat surface with concavities and convexities 7, as shown in Fig. 2(b). . With the diamond layer 3 formed on the surface of the St substrate 1 attached to the Si substrate 1, as shown in FIG. Using silver solder consisting of Cd 1%, Zn: 23%, Ag: balance, in vacuum at a temperature of 660°C for 10
Brazing 5 was performed by heating for a minute. The diamond layer 3 had minute irregularities in accordance with the irregularities 7 of the Si substrate 1, or the minute irregularities did not interfere with brazing.

ついで、上記超硬合金製切削チップ6にろう付け5され
たダイヤモンド層3およびSi基板1を、昇温速度=2
0℃/分で温度500℃に真空加熱し、ついて冷却速度
110℃/分で真空冷却し、この加熱および冷却を5回
繰返したのち、上記Si基板1に軽く振動を加えたとこ
ろ、ろう付けされたダイヤモンド層3からSi基板1を
簡単に剥離することができ、第2図(d)に示されるよ
うに、凹凸を有するダイヤモンド被覆超硬合金製切削チ
ップ9が得られた。
Next, the diamond layer 3 and the Si substrate 1 brazed to the cemented carbide cutting tip 6 are heated at a heating rate of 2.
The Si substrate 1 was heated in vacuum at a rate of 0°C/min to a temperature of 500°C, then vacuum cooled at a cooling rate of 110°C/min, and after repeating this heating and cooling process 5 times, the Si substrate 1 was lightly vibrated. The Si substrate 1 could be easily peeled off from the diamond layer 3, and a diamond-coated cemented carbide cutting tip 9 having irregularities was obtained as shown in FIG. 2(d).

このろう付けされたダイヤモンド層の表面粗さを測定し
た結果、R:0.02−であった。
The surface roughness of this brazed diamond layer was measured and found to be R: 0.02-.

■ax 〔発明の効果〕 この発明によると、基板の表面形状を自由に選択するこ
とにより、いかなる曲面のダイヤモンド層を有するダイ
ヤモンド被覆切削工具をも簡単に製造することができる
■ax [Effects of the Invention] According to the present invention, by freely selecting the surface shape of the substrate, it is possible to easily manufacture a diamond-coated cutting tool having a diamond layer of any curved surface.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は、この発明によるダイヤモンド被
覆切削工具の製造工程を示す説明図。 1 : Si基板、     2:曲 面、3:ダイヤ
モンド層、 4.6二超硬合金製切削チップ、 5:ろう付け、      7:凹 凸、8:曲面を有
するダイヤモンド被覆超硬合金製切削チップ、 9:凹凸を有するダイヤモンド被覆超硬合金製切削チッ
プ。 第 図 被覆超硬合金製切削チップ
FIGS. 1 and 2 are explanatory diagrams showing the manufacturing process of a diamond-coated cutting tool according to the present invention. 1: Si substrate, 2: curved surface, 3: diamond layer, 4.6 two cemented carbide cutting tips, 5: brazing, 7: unevenness, 8: diamond coated cemented carbide cutting tip with curved surface, 9: Diamond-coated cemented carbide cutting tip with unevenness. Diagram: Coated cemented carbide cutting tip

Claims (4)

【特許請求の範囲】[Claims] (1)基板表面に気相合成法により厚さ:1〜3000
μmのダイヤモンド層を形成し、上記基板表面に形成さ
れたままのダイヤモンド層を切削工具基体にろう付けし
、ついで、上記基板を除去するダイヤモンド被覆切削工
具の製造法において、 上記基板およびダイヤモンド層に、加熱および冷却の熱
サイクルを加えることにより、切削工具基体にろう付け
されたダイヤモンド層から上記基板を剥離し除去するこ
とを特徴とするダイヤモンド被覆切削工具の製造法。
(1) Thickness: 1-3000 by vapor phase synthesis method on the substrate surface
A method for manufacturing a diamond-coated cutting tool, in which a diamond layer of μm thick is formed, the diamond layer still formed on the surface of the substrate is brazed to a cutting tool base, and then the substrate is removed. A method for producing a diamond-coated cutting tool, characterized in that the substrate is peeled off and removed from a diamond layer brazed to the cutting tool base by applying a thermal cycle of heating and cooling.
(2)曲面を有する基板表面に気相合成法により厚さ:
1〜3000μmのダイヤモンド層を形成し、上記基板
表面に形成されたままのダイヤモンド層を切削工具基体
にろう付けし、ついで、上記基板およびダイヤモンド層
に、加熱および冷却の熱サイクルを加えることにより、
切削工具基体にろう付けされたダイヤモンド層から上記
基板を剥離し除去することを特徴とする曲面を有するダ
イヤモンド被覆切削工具の製造法。
(2) Thickness obtained by vapor phase synthesis on a curved substrate surface:
By forming a diamond layer of 1 to 3000 μm, brazing the diamond layer formed on the surface of the substrate to the cutting tool base, and then subjecting the substrate and the diamond layer to a thermal cycle of heating and cooling,
A method for manufacturing a diamond-coated cutting tool having a curved surface, comprising peeling off and removing the substrate from a diamond layer brazed to the cutting tool base.
(3)表面に凹凸を有する基板表面に気相合成法により
厚さ:1〜3000μmのダイヤモンド層を形成し、上
記表面に凹凸を有する基板表面に形成されたままのダイ
ヤモンド層を切削工具基体にろう付けし、ついで、上記
基板およびダイヤモンド層に、加熱および冷却の熱サイ
クルを加えることにより、切削工具基体にろう付けされ
たダイヤモンド層から上記基板を剥離し除去することを
特徴とする表面に凹凸を有するダイヤモンド被覆切削工
具の製造法。
(3) A diamond layer with a thickness of 1 to 3000 μm is formed on the surface of the substrate having an uneven surface by vapor phase synthesis, and the diamond layer formed on the surface of the substrate having the uneven surface is applied to the cutting tool base. brazing, and then subjecting the substrate and the diamond layer to a thermal cycle of heating and cooling, thereby peeling and removing the substrate from the diamond layer brazed to the cutting tool base. A method for manufacturing a diamond-coated cutting tool having the following methods.
(4)上記熱サイクルを加えるための加熱温度は、上記
ろう材の融点未満の温度であることを特徴とする請求項
1〜3記載のダイヤモンド被覆切削工具の製造法。
(4) The method for manufacturing a diamond-coated cutting tool according to any one of claims 1 to 3, wherein the heating temperature for applying the heat cycle is a temperature lower than the melting point of the brazing filler metal.
JP7492290A 1990-03-23 1990-03-23 Manufacture of diamond-coated cutting tool Pending JPH03277424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7492290A JPH03277424A (en) 1990-03-23 1990-03-23 Manufacture of diamond-coated cutting tool

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7492290A JPH03277424A (en) 1990-03-23 1990-03-23 Manufacture of diamond-coated cutting tool

Publications (1)

Publication Number Publication Date
JPH03277424A true JPH03277424A (en) 1991-12-09

Family

ID=13561350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7492290A Pending JPH03277424A (en) 1990-03-23 1990-03-23 Manufacture of diamond-coated cutting tool

Country Status (1)

Country Link
JP (1) JPH03277424A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367927B1 (en) * 1999-07-23 2003-01-14 맹주호 Manufacturing process for grinder in planting diamond
KR100882410B1 (en) * 2005-06-23 2009-02-05 류제원 Method of producing CVD diamond tool for low surface-roughness machining by using polished nano-CVD diamond materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367927B1 (en) * 1999-07-23 2003-01-14 맹주호 Manufacturing process for grinder in planting diamond
KR100882410B1 (en) * 2005-06-23 2009-02-05 류제원 Method of producing CVD diamond tool for low surface-roughness machining by using polished nano-CVD diamond materials

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