JPH03274718A - Film for supporting x-ray exposure mask and x-ray exposure mask - Google Patents
Film for supporting x-ray exposure mask and x-ray exposure maskInfo
- Publication number
- JPH03274718A JPH03274718A JP2074787A JP7478790A JPH03274718A JP H03274718 A JPH03274718 A JP H03274718A JP 2074787 A JP2074787 A JP 2074787A JP 7478790 A JP7478790 A JP 7478790A JP H03274718 A JPH03274718 A JP H03274718A
- Authority
- JP
- Japan
- Prior art keywords
- support film
- exposure mask
- ray
- transmittance
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 239000006096 absorbing agent Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 22
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005469 synchrotron radiation Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 nitrogen ions Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＸ線露光用マスクの支持膜及びＸ線露光用マス
クに関し、例えば波長２人〜１５０人程度のＸ線を用い
てマスク面上の電子回路パターンをウェハ面上に転写し
、ｌｃ、ＬｓＩ等の半導体素子を製造する際に好適な所
定のアライメントマークを設けるようにしたＸ線露光用
マスクの支持膜及びそれを用いたＸ線露光用マスクに関
するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a support film for an X-ray exposure mask and an X-ray exposure mask. A support film for an X-ray exposure mask that transfers an electronic circuit pattern onto a wafer surface and provides a predetermined alignment mark suitable for manufacturing semiconductor devices such as LC and LSI, and an X-ray using the same. This relates to an exposure mask.
（従来の技術）
最近１ｃ、ＬｓＩ等の半導体素子製造用の露光装置にお
いては半導体素子の高集積化に伴って、より高分解能の
焼付けが可能なＸ線を利用した露光装置が種々と提案さ
れている。(Prior Art) Recently, in exposure apparatuses for manufacturing semiconductor devices such as 1c and LsI, various exposure apparatuses using X-rays that can print with higher resolution have been proposed as semiconductor devices become more highly integrated. ing.
このＸ線を利用した露光装置で使用されるＸ線露光用マ
スクは一般にリング状の形状をした支持枠と、その開口
に緊張して張られたＸ線に対する透過性の支持膜と支持
膜面上に設けられたＸ線吸収体より成る所定の電子回路
パターンとアライメントマークとから構成されている。The X-ray exposure mask used in exposure equipment that uses X-rays generally consists of a ring-shaped support frame, a support film that is transparent to X-rays stretched under tension over the opening of the ring, and a support film surface. It consists of a predetermined electronic circuit pattern made of an X-ray absorber provided above and an alignment mark.
このＸ線吸収体より成る電子回路パターンは例えばサブ
ミクロンの精度で、かつ再現性良く、被転写体、例えば
ウェハ面上に転写されるように構成されている。The electronic circuit pattern made of this X-ray absorber is configured to be transferred onto an object to be transferred, such as a wafer surface, with, for example, submicron precision and good reproducibility.
ＸｗＡ露光用マスクの支持膜はその性質よりＸ線に対し
て所定の透過率を有し、かつアライメント光（可視光又
は近赤外光）に対しても所定の透過率を有することが要
求される。Due to its nature, the support film of the XwA exposure mask is required to have a predetermined transmittance for X-rays and also for alignment light (visible light or near-infrared light). Ru.
この為Ｘ線露光用マスクの支持膜の材料とじては従来よ
り窒化ケイ素（ＳｉｓＮ−）や二酸化ケイ素（Ｓｉｎｇ
）等可視光や近赤外光に対して透過率が比較的高く、尚
かつＸ線に対して吸収の比較的少ない軽元素同志の化合
物が用いられている。For this reason, silicon nitride (SisN-) and silicon dioxide (Sing) have traditionally been used as materials for the support film of X-ray exposure masks.
) Compounds of light elements are used, which have a relatively high transmittance for visible light and near-infrared light, and have relatively low absorption of X-rays.
（発明が解決しようとする問題点）
従来のＸ線露光用マスクの支持膜は単一の材料で構成さ
れていた為にＸ線の透過率、可視光・近赤外光の透過率
、そして支持膜としての機械的強度の３つの条件を全て
良好に満足させるものがなかった。(Problems to be Solved by the Invention) Since the support film of conventional X-ray exposure masks was composed of a single material, the transmittance of X-rays, visible light and near-infrared light, and There was no material that satisfactorily satisfies all three conditions for mechanical strength as a support film.
特に従来より用いられている窒化ケイ素（ＳｉｌＮ４）
や二酸化ケイ素（Ｓ１０ｔ）等の酸化物や窒化物はシン
クロトロン等の強い放射光を照射した場合に酸素や窒素
の解離等、放射線損傷が生じ、支持膜としての性質が劣
化してくるという問題点があった。Especially silicon nitride (SilN4), which has been used conventionally.
Oxides and nitrides such as silicon dioxide (S10t) suffer from radiation damage such as dissociation of oxygen and nitrogen when they are irradiated with strong synchrotron radiation, resulting in deterioration of their properties as supporting films. There was a point.
本発明はｘ！！露光用マスクの支持膜として主にＸ線透
過率が良く、かつ機械的強度の強い材料を選び、アライ
メントマークが形成される支持膜面上のアライメントマ
ーク領域に対しては特別の処置を施すことにより、アラ
イメント光に対し透過性を増し良好なるアライメントを
可能とし、全体として前述した全ての条件を良好に満足
したＸ線露光用マスクの支持膜及びＸ線露光用マスクの
提供を目的とする。This invention is x! ! Select a material with good X-ray transmittance and strong mechanical strength as the support film of the exposure mask, and take special measures for the alignment mark area on the support film surface where the alignment mark will be formed. An object of the present invention is to provide a support film for an X-ray exposure mask and an X-ray exposure mask that have increased transparency to alignment light, enable good alignment, and satisfactorily satisfy all of the above-mentioned conditions as a whole.
（問題点を解決するための手段）
本発明のＸ１！露光用マスクの支持膜はＸ線吸収体で所
定のパターンをその面上に形成する為のＸ線透過性の支
持膜であって該支持膜面上のアライメントマークを設け
るべきアライメントマーク領域を可視光又は／及び近赤
外光に対して透過性を有するように構成したことを特徴
としている。(Means for solving the problem) X1 of the present invention! The support film of the exposure mask is an X-ray absorber and is an X-ray transparent support film for forming a predetermined pattern on its surface, and the alignment mark area on the support film surface where the alignment mark is to be provided is visible. It is characterized by being configured to be transparent to light and/or near-infrared light.
特に本発明では前記アライメントマーク領域をイオン注
入手段により前記支持膜の材料にイオンを注入すること
により形成し、前記イオン注入手段により注入された部
分はイオン原子を含む化合物であり、可視光又は／及び
近赤外光に対して透過性を有することを特徴としている
。Particularly, in the present invention, the alignment mark region is formed by implanting ions into the material of the support film using an ion implantation means, and the portion implanted by the ion implantation means is a compound containing ion atoms, and visible light or / It is characterized by having transparency to near-infrared light.
（実施例）
第１図（Ａ）は本発明に係るＸ線露光用マスクの一実施
例の平面模式図、第１図（Ｂ）は第１図（Ａ）のａ−ａ
°断面説明図である。(Example) FIG. 1(A) is a schematic plan view of an example of an X-ray exposure mask according to the present invention, and FIG. 1(B) is a-a of FIG. 1(A).
It is a cross-sectional explanatory diagram.
図中１０１はＸ１１ｉｌ露光用マスクである。３はＸ線
露光用マスク支持膜であり、本実施例では主にＸｗＡに
対して一定の透過率を有し、かつ一定の機械的強度を有
した、所定の厚さの元素単体より構成している０本実施
例では元素単体を用いることにより、強い放射光を照射
した際の放射線損傷が少なく、劣化の少ないＸ線露光用
マスクを得ている。４はリング状のマスク保持枠であり
、支持膜３を緊張保持している。５はマスク補強枠であ
り、リング状の保持枠４に接着され、Ｘ線露光用マスク
としての機械的強度を補っている。In the figure, 101 is an X11il exposure mask. 3 is a mask support film for X-ray exposure, and in this example, it mainly consists of a single element having a certain transmittance to XwA, a certain mechanical strength, and a predetermined thickness. In this example, by using a single element, a mask for X-ray exposure with less radiation damage and less deterioration when irradiated with strong synchrotron radiation is obtained. 4 is a ring-shaped mask holding frame, which holds the support film 3 under tension. Reference numeral 5 denotes a mask reinforcing frame, which is bonded to the ring-shaped holding frame 4 to supplement the mechanical strength of the mask for X-ray exposure.
１はＸ線吸収体であり、ｘＩＩに対して不透過物質より
成っており、支持膜３面上に幾何学形状に描かれたパタ
ーンｌａを形成し、それより半導体素子用の電子回路パ
ターンを形成している。２は支持１１ｉ３面上のパター
ンとウェハとのアライメントを行うアライメントマーク
を形成する為のアライメントマーク領域であり、同図で
はパターン１ａの４角に各々設定されている。Reference numeral 1 denotes an X-ray absorber, which is made of a material that is impermeable to is forming. Reference numeral 2 denotes alignment mark areas for forming alignment marks for aligning the pattern on the surface 3 of the support 11i and the wafer, and in the figure, these are set at each of the four corners of the pattern 1a.
本実施例に係る支持膜３はアライメント用の可視光や近
赤外光に対して透過率が低く又は不透過である為に、イ
オン注入手段により、アライメントマーク領域２にイオ
ンを注入することにより可視光又は／及び近赤外光に対
して高い透過率を有するようにしている。Since the support film 3 according to this embodiment has a low transmittance or is opaque to visible light and near-infrared light for alignment, by implanting ions into the alignment mark region 2 using an ion implantation means. It is designed to have high transmittance to visible light and/or near-infrared light.
これにより本実施例ではＸ線に対して高透過率を有し、
かつ高い機械的強度を有し、しかもアライメントマーク
領域に対して高い可視光または／及び近赤外光の透過率
を有した良好なるＸ線露光用マスクの支持膜を得ている
。As a result, this example has high transmittance for X-rays,
Moreover, a support film for an X-ray exposure mask is obtained which has high mechanical strength and high transmittance of visible light and/or near-infrared light to the alignment mark region.
次に本発明に係るＸ線露光用マスクの作製方法の一実施
例を示す。Next, an example of a method for manufacturing an X-ray exposure mask according to the present invention will be described.
（イ）実施例 １
λ／１０に平面研磨した５ｍｍ厚のＳｉウェハ（面方位
１００）上にＲＦマグネトロンスパッタ法で炭素（Ｃ）
を５０ｎｍ成膜し、その上にホウ素（Ｂ）を１５μｍ成
膜した。その上にＸ線吸収体としての金（Ａｕ）を０．
７５μｍ成膜し、電子線描画によって線幅０５μｍの電
子回路パターンを作製した１次に水酸化カリウム（ＫＯ
Ｈ）３０％溶液（１１５℃）を用いて基板裏面からの異
方性エツチングを行ない、炭素層でエツチングを停止さ
せた。バックエッチの画角は２０ｍｍｏとした。(B) Example 1 Carbon (C) was deposited by RF magnetron sputtering on a 5 mm thick Si wafer (plane orientation 100) that was polished to λ/10.
A 50 nm thick film was formed, and a 15 μm thick boron (B) film was formed thereon. On top of that, gold (Au) was added as an X-ray absorber.
A primary potassium hydroxide (KO
H) Anisotropic etching was performed from the back surface of the substrate using a 30% solution (115° C.), and the etching was stopped at the carbon layer. The angle of view for back etching was 20 mm.
このようにして得たマスクのアライメントマークを形成
するアライメントマーク領域に開口１００Ｘ２５０μｍ
のマスキングを施し１、イオン注入手段によって窒素イ
オンを支持膜中に注入したところ、そのアライメントマ
ーク領域のみ窒化物が形成された。An opening of 100 x 250 μm is formed in the alignment mark area of the thus obtained mask.
When nitrogen ions were implanted into the support film using an ion implantation means, nitride was formed only in the alignment mark region.
次に作製したマスクに対し、ウェハとの位置合わせのた
めアライメントマーク領域に波長７８０ｎｍのアライメ
ント光を照射したところ、アライメント光の透過率は８
１％程度で位置合わせの精度を十分保証できるちのであ
った。Next, when the manufactured mask was irradiated with alignment light with a wavelength of 780 nm to the alignment mark area for alignment with the wafer, the transmittance of the alignment light was 8.
It was found that alignment accuracy of about 1% could be sufficiently guaranteed.
さらに、このマスクに対し、アライメントマークとその
外側を覆う形状のアパーチャーを設けた上でアルミニウ
ムのＫａ線（波長０．８３ｎｍ）のＸ線を照射しマスク
の透過Ｘ線の強度を光電子増倍管を用いて測定したとこ
ろ全吸収体パターンの無い部分とある部分とで約２５・
１のコントラストを得た。Furthermore, an aperture shaped to cover the alignment mark and the outside thereof is provided on this mask, and then irradiated with aluminum Ka-ray (wavelength 0.83 nm) X-rays, and the intensity of the X-rays transmitted through the mask is measured using a photomultiplier. When measured using a total absorber pattern, the difference between the area without the absorber pattern and the area with it was approximately 25.
A contrast of 1 was obtained.
（ロ）実施例 ２
第２図は本発明の実施例２のＸ千露光用マスクの断面概
略図である。(B) Example 2 FIG. 2 is a schematic cross-sectional view of a mask for X,000 exposure according to Example 2 of the present invention.
λ／１０に平面研磨した５ｍｍ厚のＳｉウェハ１３（面
方位１００）上にＲＦマグネトロンスパッタ法により窒
化ケイ素（Ｓ ｉ Ｎ）を２００ｎｍ成膜し、その上に
ケイ素（Ｓｉ）を１７μｍ成膜した０次にこの上にＸ線
吸収体としての金（Ａｕ）を０７５μｍ成膜し電子線描
画によって線幅０５μｍの電子回路パターン１１を作製
した。つぎにこれに対して水酸化カリウム（ＫＯＨ）３
０％溶液（１１５℃）を用いて基板裏面からの異方性エ
ツチングを行ない窒化ケイ素層１６でエツチングを停止
させた。この際バックエッチの画角は１５ｍｍ’とした
。A 200 nm film of silicon nitride (S i N) was formed by RF magnetron sputtering on a 5 mm thick Si wafer 13 (plane orientation 100) that had been plane-polished to λ/10, and a 17 μm film of silicon (Si) was formed thereon. Next, a gold (Au) film of 075 μm as an X-ray absorber was formed on this, and an electronic circuit pattern 11 with a line width of 05 μm was produced by electron beam lithography. Next, for this, potassium hydroxide (KOH) 3
Anisotropic etching was performed from the back surface of the substrate using a 0% solution (115° C.), and the etching was stopped at the silicon nitride layer 16. At this time, the angle of view of the back etch was set to 15 mm'.
このようにして得たマスクのアライメントマーク領域１
２に５０４ ｍ Ｘ ２５０μｍの領域にわたって集束
イオンビームによって酸素イオンを打ち込んたとこるそ
のアライメントマーク領域のみ酸化物（ｆＭ化ケイ素）
か形成された。Alignment mark area 1 of the mask obtained in this way
Oxygen ions were implanted by a focused ion beam over an area of 504 m x 250 μm in 2, and only the alignment mark area was filled with oxide (fM silicon oxide).
or was formed.
次に作製したマスクに対しウェハとの位置合わせのため
アライメントマーク領域１２に波長８３０ｎｍのアライ
メント光を照射したところアライメント光の透過率は７
５％程度あった。Next, alignment light with a wavelength of 830 nm was irradiated onto the alignment mark area 12 of the fabricated mask in order to align it with the wafer, and the transmittance of the alignment light was 7.
It was about 5%.
さらに、このマスクに対し、アライメントマークとその
外側を覆う形状のアパーチャーを設けた上でシンクロト
ロン放射光を分光して波長１ｎｍの軟Ｘ線と取り出し照
射したところ、マスク透過光のコントラストは全吸収体
パターンの無い部分と、ある部分とて約１２０＋１であ
った。また従来よりマスク支持Ｈ１３として用いられて
いる窒化ケイ素（Ｓｉｘ Ｎ４）１．９川ｍ厚と比較し
て、この波長における軟Ｘ線透過率は約１．５ｆａてあ
り、マスクのＸ線吸収による熱歪か低減された。Furthermore, when this mask was provided with an aperture shaped to cover the alignment mark and its outside, the synchrotron radiation was separated and extracted and irradiated with soft X-rays with a wavelength of 1 nm.The contrast of the light transmitted through the mask was completely absorbed. The part with no body pattern and the part with body pattern were about 120+1. Furthermore, compared to the silicon nitride (Six N4) thickness of 1.9 m, which has been conventionally used as the mask support H13, the soft X-ray transmittance at this wavelength is approximately 1.5 fa, which is due to the X-ray absorption of the mask. Thermal strain was reduced.
尚、第２図において１４はマスク保持枠（ケイ素基板）
、１５はマスク補強枠である。In addition, in Fig. 2, 14 is a mask holding frame (silicon substrate).
, 15 is a mask reinforcing frame.
（発明の効果）
本発明によれば支持膜面上のアライメントマーク領域を
イオン注入手段により、アライメント光に対して所定の
透過率を有するように構成することにより機械的強度が
強く、Ｘ線に対して高い透過率を有した良好なるＸＳ＊
Ｓ光用マスクの支持膜及びそれを用いたＸ線露光用マス
クを達成することができる。(Effects of the Invention) According to the present invention, the alignment mark area on the support film surface is configured to have a predetermined transmittance to alignment light by ion implantation means, so that it has strong mechanical strength and is resistant to X-rays. Good XS* with high transmittance against
A support film for an S-light mask and an X-ray exposure mask using the support film can be achieved.
特に本発明では支持膜としてホウ素（Ｂ）等、機械的強
度の高い元素単体より成る材料を用いることにより、支
持膜の厚さを従来より薄くすることができ、Ｘ線透過率
が増大する為、ｌショット当りの露光時間を短縮するこ
とができ、支持膜のＸ線吸収による熱歪の低減化及びＸ
ａ＊ｒｌｌ射に対して安定化を図ったＸ線露光用マスク
の支持膜を達成することができる。また、これと同時に
スルーブツトの向上も図ることができる。In particular, in the present invention, by using a material made of a single element with high mechanical strength, such as boron (B), as the support film, the thickness of the support film can be made thinner than before, and the X-ray transmittance increases. , exposure time per shot can be shortened, thermal strain due to X-ray absorption of the supporting film can be reduced, and
A support film for an X-ray exposure mask that is stabilized against a*rll radiation can be achieved. At the same time, it is also possible to improve throughput.
？！１図（Ａ）、（Ｂ）は本発明の一実施例の平面模式
図と断面説明図、第２図は本発明の実施例２の断面説明
図である。
図中１．１１はＸ線吸収体、２．１２はアライメントマ
ーク領域、３．１３は支持膜、４．１４はマスク保持枠
、５．１５はマスク補強枠、１６は窒化ケイ素層である
。? ! 1A and 1B are a schematic plan view and a cross-sectional explanatory view of an embodiment of the present invention, and FIG. 2 is a cross-sectional explanatory diagram of a second embodiment of the present invention. In the figure, 1.11 is an X-ray absorber, 2.12 is an alignment mark area, 3.13 is a support film, 4.14 is a mask holding frame, 5.15 is a mask reinforcing frame, and 16 is a silicon nitride layer.
Claims (6)
る為のＸ線透過性の支持膜であって該支持膜面上のアラ
イメントマークを設けるべきアライメントマーク領域を
可視光又は／及び近赤外光に対して透過性を有するよう
に構成したことを特徴とするＸ線露光用マスクの支持膜
。(1) An X-ray transparent support film for forming a predetermined pattern on the surface of an X-ray absorber, and an alignment mark area on the support film surface where an alignment mark is to be provided can be detected using visible light or/and A support film for an X-ray exposure mask, characterized in that it is configured to be transparent to near-infrared light.
より前記支持膜の材料にイオンを注入することにより形
成したことを特徴とする請求項１記載のＸ線露光用マス
クの支持膜。(2) The support film for an X-ray exposure mask according to claim 1, wherein the alignment mark region is formed by implanting ions into the material of the support film using ion implantation means.
がイオン原子を含む化合物であり、可視光又は／及び近
赤外光に対して透過性を有することを特徴とする請求項
２記載のＸ線露光用マスクの支持膜。(3) The X-ray according to claim 2, wherein the region into which ions are implanted by the ion implantation means is a compound containing ion atoms and is transparent to visible light and/or near-infrared light. Support film for exposure masks.
は元素単体より成っていることを特徴とする請求項１記
載のＸ線露光用マスクの支持膜。(4) The support film for an X-ray exposure mask according to claim 1, wherein the region other than the alignment mark region of the support film is made of a single element.
領域はホウ素より形成されていることを特徴とする請求
項４記載のＸ線露光用マスクの支持膜。(5) The support film for an X-ray exposure mask according to claim 4, wherein a region other than the alignment mark region on the surface of the support film is made of boron.
ていることを特徴とする請求項１〜５のいずれか１項に
記載のＸ線露光用マスク。(6) The X-ray exposure mask according to any one of claims 1 to 5, wherein the X-ray exposure mask is constructed using a support film of the X-ray exposure mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7478790A JP2853247B2 (en) | 1990-03-24 | 1990-03-24 | Support film for X-ray exposure mask and X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7478790A JP2853247B2 (en) | 1990-03-24 | 1990-03-24 | Support film for X-ray exposure mask and X-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03274718A true JPH03274718A (en) | 1991-12-05 |
| JP2853247B2 JP2853247B2 (en) | 1999-02-03 |
Family
ID=13557350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7478790A Expired - Fee Related JP2853247B2 (en) | 1990-03-24 | 1990-03-24 | Support film for X-ray exposure mask and X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2853247B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112009000062T5 (en) | 2008-09-26 | 2010-10-14 | Art Metal Mfg. Co., Ltd., Ueda-shi | Coated aluminum product |
| JP2012237869A (en) * | 2011-05-11 | 2012-12-06 | Fujitsu Semiconductor Ltd | Photomask and manufacturing method for the same |
| US9377682B2 (en) | 2011-06-30 | 2016-06-28 | Kabushiki Kaisha Toshiba | Template substrate, method for manufacturing same, and template |
-
1990
- 1990-03-24 JP JP7478790A patent/JP2853247B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112009000062T5 (en) | 2008-09-26 | 2010-10-14 | Art Metal Mfg. Co., Ltd., Ueda-shi | Coated aluminum product |
| JP2012237869A (en) * | 2011-05-11 | 2012-12-06 | Fujitsu Semiconductor Ltd | Photomask and manufacturing method for the same |
| US9377682B2 (en) | 2011-06-30 | 2016-06-28 | Kabushiki Kaisha Toshiba | Template substrate, method for manufacturing same, and template |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2853247B2 (en) | 1999-02-03 |
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| LAPS | Cancellation because of no payment of annual fees |