JPH03272130A - Spin coating process - Google Patents

Spin coating process

Info

Publication number
JPH03272130A
JPH03272130A JP7401590A JP7401590A JPH03272130A JP H03272130 A JPH03272130 A JP H03272130A JP 7401590 A JP7401590 A JP 7401590A JP 7401590 A JP7401590 A JP 7401590A JP H03272130 A JPH03272130 A JP H03272130A
Authority
JP
Japan
Prior art keywords
substrate
film thickness
resist
coating
coating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7401590A
Other languages
Japanese (ja)
Inventor
Toshio Yada
矢田 俊雄
Taro Maejima
太郎 前島
Osamu Aoki
理 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7401590A priority Critical patent/JPH03272130A/en
Publication of JPH03272130A publication Critical patent/JPH03272130A/en
Pending legal-status Critical Current

Links

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To equalize the film thickness by a method wherein a substrate is spinned in a vacuum vessel so as to dry up and solidify the coating solution. CONSTITUTION:An upper cup 14 is opened to mount a glass substrate 11 on a specimen base 13; liquid resist is dripped on the central part of the substrate 11 and then the cup 14 is closed; the substrate 11 is spinned at 300rpm for 5 minutes by a motor 12 to spread the resist over the whole surface; next the pump 12 is accelerated at 1000rpm; and after 10sec. exhaust step is started by a pump 24 to attain to the vacuum degree of 50Hg after 20sec. While preserving the vacuum degree using a pressure regulating valve 23, the spinning step is continued for 30sec. to be further prebaked at 90 deg. for 30 minutes in an oven. Through these procedures, coating solution in fluid state can be dried up and solidified in a vacuum vessel so that the phenomena of friction between air and the surface of coating solution as well as the sweeping wind may be eased thereby enabling the even distribution of film thickness to be realized while the drying and solidifying time are cut down.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は基板を回転させながら塗布液を塗布する一ス
ピン塗布方法に関するものである。例えば半導体製造工
程に用いられ、特に角基板上に液状レジストを均一な膜
厚で塗布するのに有効な方法である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a one-spin coating method in which a coating liquid is applied while rotating a substrate. For example, it is used in the semiconductor manufacturing process, and is particularly effective for coating a liquid resist with a uniform thickness on a square substrate.

[従来の技術] 現在、半導体を始めとして、液晶デイスプレィや密着イ
メージセンサなどの電子部品は写真製版技術を利用して
製造されているが、その工程にかける微細加工技術の良
合が、電子部品の製造歩留り、電気特性、信頼性、製造
コストなどを決定づけている。
[Conventional technology] Currently, electronic components such as semiconductors, liquid crystal displays, and contact image sensors are manufactured using photolithography technology. It determines the manufacturing yield, electrical characteristics, reliability, manufacturing cost, etc. of

上記微細加工工程にかいてはシリコンウェハや無機薄厚
が付着したガラス基板などにレジスト膜を形威し、その
膜に回路パターンを露光して上記パターンを転写し、そ
のレジスト膜に形成されたパターンに従って酸などでシ
リコンや無機薄膜をエツチングしている。このfaII
llII加工を何回かくりかえして電子部品ができ上る
In the above microfabrication process, a resist film is formed on a silicon wafer or a glass substrate to which an inorganic thin film is attached, and a circuit pattern is transferred onto the film by exposing the circuit pattern to the pattern formed on the resist film. Accordingly, silicon and inorganic thin films are etched using acids. This faII
Electronic parts are completed by repeating the llII process several times.

従来、この微細加工の工程では、シリコンなどの基板上
にレジスト膜を形成するのに第3図の断面構成図に示す
ようなスピンナ装置が使用されている。この装置はレジ
スト膜を形成しようとする基板(1)をモータ(2)に
よって回転する試料台(3)と、別に基板(1〉上に液
状レジストを滴下供給するシステム(省略)を備え、ス
ピンナの上カップ(4)、スピンナカップ内の溶媒蒸気
等を排気するダクト(6〉を備えた下カップ(5)から
構成される装置基板(1)を試料台、(3)の上に設置
し、その中央に液状レジストを滴下した後、スピンナの
上カップ(4)を閉じてモータ(2)を回転すると、試
料台(3)が回転すると共に基板(1)も回転してその
上に乗っている液状レジストが全面に広がり、回転時間
の経過につれて溶媒が蒸発レジスト膜が形成される。
Conventionally, in this microfabrication process, a spinner device as shown in the cross-sectional configuration diagram of FIG. 3 has been used to form a resist film on a substrate such as silicon. This device is equipped with a sample stage (3) that rotates a substrate (1) on which a resist film is to be formed by a motor (2), and a separate system (not shown) for dropping liquid resist onto the substrate (1). An apparatus board (1) consisting of an upper cup (4) and a lower cup (5) equipped with a duct (6) for exhausting solvent vapor etc. in the spinner cup is placed on the sample stage (3). After dropping the liquid resist in the center, close the spinner upper cup (4) and rotate the motor (2), the sample stage (3) will rotate and the substrate (1) will also rotate and sit on it. The liquid resist spreads over the entire surface, and as the rotation time passes, the solvent evaporates and a resist film is formed.

このようにスピンナで塗布するとき基板(1)の回転に
よってカップ内の空気とレジスト表面の摩擦によって膜
厚が変動する。特に角基板の場合は基板の角で風を切っ
て顕著な影響が現れる。第4図(A) (B)は各々市
販レジストOF’PR−800(15cp)(東京応化
工業(株)製)をスピンナの回転数1000 r pm
で塗布し、90’C30分プレベークした時の基板内膜
厚分布を示す特性図である。縦軸は基板の平均膜厚を1
とした時の相対膜厚を横軸は距離を示してかり、第4L
l(A)は125Nφの丸基板の膜厚分布を示し、第4
図(B)は125 X 125 tm角のガラヌ基板の
膜厚分布を示している。前者は基板端面から20.、の
間(図中aで示す部分)は膜厚が約5q6薄くなり、後
者は角基板の内接円の内側で均一膜厚となるがその外側
では風の流れに添って谷(図中すで示す)ができ、より
端面に近い所は表面張力で膜厚が厚くなろう このようにスピンナの回転によって基板の端面で風を切
るためレジスト膜厚が不均一となるので、電子部品の製
造には中央の平坦な部分しか使用できず、無駄になる部
分が多い。特に、角基板を使用すると、平坦な部分が狭
くなり基板周辺に使用できない部分が多くできる。
As described above, when coating with a spinner, the rotation of the substrate (1) causes the film thickness to vary due to friction between the air in the cup and the resist surface. Particularly in the case of a square board, the corners of the board cut the wind and have a noticeable effect. Figures 4 (A) and (B) show commercially available resist OF'PR-800 (15 cp) (manufactured by Tokyo Ohka Kogyo Co., Ltd.) at a spinner rotation speed of 1000 rpm.
FIG. 3 is a characteristic diagram showing the film thickness distribution within the substrate when the film is coated at 90° C. and prebaked for 30 minutes. The vertical axis represents the average film thickness of the substrate.
The horizontal axis shows the relative film thickness when the distance is 4th L.
l(A) shows the film thickness distribution of a round substrate of 125Nφ, and the fourth
Figure (B) shows the film thickness distribution of a 125 x 125 tm square Galanu substrate. The former is 20. The film thickness becomes approximately 5q6 thinner between , (the part indicated by a in the figure), and the latter becomes a uniform film thickness inside the inscribed circle of the square substrate, but outside of it, there is a trough (in the figure) along with the wind flow. (shown above), and the film thickness becomes thicker near the edge due to surface tension.The rotation of the spinner cuts the wind at the edge of the substrate, making the resist film thickness uneven, making it difficult for electronic components to Only the flat central part can be used for manufacturing, and much of it is wasted. In particular, when a square substrate is used, the flat portion becomes narrow and there are many unusable areas around the substrate.

一方、均一な膜厚の塗布膜を得るために、特開昭59−
82975Jij−公報及び特開昭60−245225
号公報に塗布処理槽内を排気して高速回転時に発生する
フォトレジストの噴霧を吸引して再付着、はねかえり現
象等を防止する装置が提案されている。
On the other hand, in order to obtain a coating film with a uniform thickness,
82975Jij-publication and JP-A-60-245225
In Japanese Patent No. 3, a device has been proposed which evacuates the inside of a coating treatment tank and sucks up the photoresist spray generated during high speed rotation to prevent redeposition, splashing, etc.

ところが、これらにかける排気手段はいわば換気扇のよ
うな類のもので、風が回る、起こる状態となっている。
However, the exhaust means used for these are similar to ventilation fans, and the wind is rotating.

そのため、排気した場合、却って風が起こり塗膜に筋状
の波形が形成される。
Therefore, when the air is exhausted, wind is generated instead, forming streak-like waveforms on the coating film.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のスピン塗布方法は以上のように回転させながら塗
布液、例えばフォトレジストの溶媒を揮発させレジスト
膜を形成しているので、空気とレジスト表面の摩擦によ
って膜厚が変動し、不均一になるという問題点があった
。特に角基板の場合は基板の角で風を切るため顕著であ
った。
In the conventional spin coating method, a resist film is formed by evaporating the coating liquid, such as the solvent of the photoresist, while rotating as described above, so the film thickness fluctuates due to friction between the air and the resist surface, resulting in non-uniformity. There was a problem. This was especially noticeable in the case of a square board because the corners of the board cut the wind.

この発明は上記のような問題点を解消するためになされ
たもので、均一な膜厚の塗布膜を形成できるスピン塗布
方法を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and an object thereof is to provide a spin coating method that can form a coating film of uniform thickness.

〔課題を解決するための手段〕[Means to solve the problem]

この発明のスピン塗布方法は、塗布液を基板を回転させ
て全面に広げた後、上記基板を収容する槽内を真空に排
気し、上記基板を回転させながら流動状態の上記塗布液
を乾燥固定し塗布膜を形成するようにしたものである。
In the spin coating method of the present invention, the coating solution is spread over the entire surface by rotating the substrate, and then the inside of the tank housing the substrate is evacuated, and the coating solution in a fluid state is dried and fixed while rotating the substrate. This method forms a coating film.

〔作用〕[Effect]

この発明にかいては真空中で基板を回転させて溶媒を揮
発させ塗布膜を形成するので、空気とレジスト膜の摩擦
及び風を切る現象を低減でき、それに起因する膜厚の不
均一が改善され、基板の広い面積にわたって平坦な塗布
膜が得られる、〔実施例〕 この発明はスピンナによって基板上に塗布液、例えIi
液液状しヌトを塗布するとき、基板を試料台に設置し、
その上にレジスト液を滴下後又は滴下させながらスピン
ナを回転させてレジスト液が基板全面に広がった後に、
基板を収容する槽であるカップ内をレジストの溶媒が沸
騰しない範囲(溶媒の蒸気圧以上)の真空度にしながら
回転させて基板端面の風切り効果を減少させ、溶媒を蒸
発させ流動状態の塗布液を乾燥固定し、均一な膜厚の塗
布膜を得るものである。
In this invention, since the substrate is rotated in a vacuum to evaporate the solvent and form a coating film, it is possible to reduce the friction between the air and the resist film and the phenomenon of wind cutting, and to improve the uneven film thickness caused by this. [Embodiment] This invention provides a coating solution, such as Ii, on a substrate using a spinner.
When applying liquid Nuto, place the substrate on the sample stage,
After dropping the resist solution on it, or rotating the spinner while dropping it, the resist solution spreads over the entire surface of the substrate.
The inside of the cup, which is the tank that houses the substrate, is rotated while creating a vacuum within the range where the resist solvent does not boil (above the vapor pressure of the solvent) to reduce the wind effect on the edge of the substrate, evaporate the solvent, and turn the coating liquid into a fluid state. is dried and fixed to obtain a coating film of uniform thickness.

高真空度にしてレジスト溶媒の蒸気圧以下にするとレジ
スト膜内で気泡が発生し平坦な膜が得られない。真空度
は数6 as Hgでも効果があるが実用的には数十s
lugが適当である。
If the vacuum is set to a high degree and the pressure is lower than the vapor pressure of the resist solvent, bubbles will occur within the resist film, making it impossible to obtain a flat film. It is effective even if the degree of vacuum is several 6 as Hg, but in practical terms it is several tens of seconds.
lug is suitable.

上記のように真空中で塗布したレジスト膜は溶媒が完全
に除去されていればプレベークをしないで直ちにパター
ン露光ができるが残留溶媒があるときはプレベークを行
ってからパターン露光を行う。
If the solvent is completely removed from the resist film coated in vacuum as described above, pattern exposure can be performed immediately without pre-baking, but if there is residual solvent, pre-baking is performed before pattern exposure.

以下、この発明を実施例に基づき、具体的に説明する。Hereinafter, this invention will be specifically explained based on Examples.

第1図はこの発明に係わるスピンナ装置の一例を示す断
面構成図である。基板(]1)はモータ(12)によっ
て回転する試料台(13)と結ばれ、モータ(12)回
転軸が下カップを貫通する部分(22)には気密を保つ
ため磁気シールを施している。又、上カップ(14)と
下カップ(15)の間はOリング(21)で真空を保っ
ている。排気用配管(16)は途中に圧力調整バルブ(
23)を設けてロータリポンプ(24)に継いであり、
スピンナカップ内を真空にできる構造にしである。
FIG. 1 is a sectional view showing an example of a spinner device according to the present invention. The substrate (1) is connected to a sample stage (13) that is rotated by a motor (12), and a magnetic seal is applied to the part (22) where the rotating shaft of the motor (12) passes through the lower cup to maintain airtightness. . Further, a vacuum is maintained between the upper cup (14) and the lower cup (15) by an O-ring (21). The exhaust pipe (16) has a pressure adjustment valve (
23) is provided and connected to the rotary pump (24),
It has a structure that can create a vacuum inside the spinner cup.

次に動作について説明する。Next, the operation will be explained.

この装置でレジストを塗布するときの実施例を以下に示
す。
An example of applying resist using this apparatus is shown below.

上カップ(14)を開き、125 X 1.25 ra
m角のガラス基板(11)を試料台(13)の上に設置
する。次いで液状レジスト0FPR−800(15c 
)東京応化工業(株)製を基板中央に滴下して上カップ
を閉じ、モータ(12)によって基板(11)を300
 rpm 、 5秒間回転させて、液状レジストを全面
に広げる。直ちに回転数を1.000 rpmにして1
0秒後にロータリポンプ(24)によって排気を開始し
、20秒後に50mHgの真空度に達した。圧力調整バ
ルブ(23)でこの真空度を保ちながら更に30秒間回
転させた後に、さらに90030分間オープン中でブレ
ベークを行った。この時の膜厚分布を第2図の特性図に
示した。
Open the upper cup (14) and measure 125 x 1.25 ra
An m square glass substrate (11) is placed on the sample stage (13). Next, liquid resist 0FPR-800 (15c
) manufactured by Tokyo Ohka Kogyo Co., Ltd., onto the center of the substrate, close the upper cup, and move the substrate (11) by 300 mm using the motor (12).
rpm for 5 seconds to spread the liquid resist over the entire surface. Immediately increase the rotation speed to 1.000 rpm and
Evacuation was started by the rotary pump (24) after 0 seconds, and a vacuum level of 50 mHg was reached after 20 seconds. After rotating for an additional 30 seconds while maintaining this degree of vacuum with the pressure adjustment valve (23), brebake was performed in the open for an additional 90,030 minutes. The film thickness distribution at this time is shown in the characteristic diagram of FIG.

縦軸は相対膜厚、横軸は距離を表わす。The vertical axis represents relative film thickness, and the horizontal axis represents distance.

従来技術によって塗布した膜厚分布(第4図(B))と
比較すると基板角部で風の影響が少なく基板の周辺普で
平坦な塗布膜が得られていることがわかる。
When compared with the film thickness distribution coated by the conventional technique (FIG. 4(B)), it can be seen that there is less influence of wind at the corners of the substrate, and a flat coating film is obtained around the substrate.

昔た、このように流動状態の塗布液の乾燥固定を真空槽
内で行うことにより空気と塗布液表面の摩擦及び基板の
風切り現象を低減でき膜厚分布の均一化が実現できるだ
けでなく、乾燥固定に要する時間を短縮でき、基板の回
転速度を低く抑えることもできる。基板回転の低速化は
特に大基板に対してメリットが大きく、回転に要するモ
ータも小型化でき、安全性も高くなる。
In the past, by drying and fixing the coating liquid in a fluid state in a vacuum chamber, it was possible to reduce the friction between the air and the coating liquid surface and the wind blowing of the substrate, and to achieve a uniform film thickness distribution. The time required for fixing can be shortened, and the rotation speed of the substrate can also be kept low. Reducing the speed of substrate rotation is particularly advantageous for large substrates, and the motor required for rotation can also be made smaller, increasing safety.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、スピン塗布にかいて
、塗布液を基板を回転させて全面に広げた後、上記基板
を収容する槽内を真空に排気し、上記基板を回転させな
がら流動状態の上記塗布液を乾燥固定するようにしたの
で、槽内空気と塗布液表面の摩擦及び基板の風切り現象
を低減でき、それに起因する膜厚不均一を低減できるの
で、均一な膜厚の塗布膜が得られる効果がある。
As described above, according to the present invention, in spin coating, after the coating liquid is spread over the entire surface by rotating the substrate, the inside of the tank containing the substrate is evacuated, and while the substrate is being rotated, the coating solution is spread over the entire surface. By drying and fixing the coating liquid in a fluid state, it is possible to reduce friction between the air in the tank and the surface of the coating liquid and the wind blowing phenomenon of the substrate, and to reduce unevenness in film thickness caused by this, resulting in a uniform film thickness. This has the effect of providing a coating film.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明に係わるスピンナ装置の一例を示す断
面構成図、第2図はこの発明の一実施例のスピン嗜布方
法による塗膜の膜厚分布を示す特性図、第3図は従来の
スピンナ装置を示す断面構成図、第4図(A) (B)
は各々従来法による塗布膜の膜厚分布を示す特性図であ
る。 図に卦いて、(11)は基板、(12)はモータ、(1
4)は上カップ、(15)は下カップ、(21)は真空
用Oリング、(22)は磁気シール、(23)は圧力調
整バルブ(24)ハロータリポンブである。ここでは上
カッ/Ql プ(14)と下カップ(15)で槽を形成している。 な)、図中、同一符号は同−又は相当部分を示すり
Fig. 1 is a cross-sectional configuration diagram showing an example of a spinner device according to the present invention, Fig. 2 is a characteristic diagram showing the film thickness distribution of a coating film by the spin distribution method of an embodiment of the invention, and Fig. 3 is a conventional Cross-sectional configuration diagram showing the spinner device of FIG. 4 (A) (B)
2A and 2B are characteristic diagrams showing film thickness distributions of coating films obtained by conventional methods. In the figure, (11) is the board, (12) is the motor, (1
4) is an upper cup, (15) is a lower cup, (21) is a vacuum O-ring, (22) is a magnetic seal, and (23) is a pressure adjustment valve (24) and a halo refill pump. Here, an upper cup/Ql cup (14) and a lower cup (15) form a tank. In the figures, the same symbols indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims]  基板に塗布液をスピン塗布する方法において、上記塗
布液を上記基板を回転させて全面に広げた後、上記基板
を収容する槽内を真空に排気し、上記基板を回転させな
がら流動状態の上記塗布液を乾燥固定するようにしたこ
とを特徴とするスピン塗布方法。
In a method of spin-coating a coating liquid onto a substrate, the coating liquid is spread over the entire surface by rotating the substrate, and then the inside of a tank containing the substrate is evacuated, and the coating liquid is applied in a fluid state while rotating the substrate. A spin coating method characterized by drying and fixing the coating solution.
JP7401590A 1990-03-22 1990-03-22 Spin coating process Pending JPH03272130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7401590A JPH03272130A (en) 1990-03-22 1990-03-22 Spin coating process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7401590A JPH03272130A (en) 1990-03-22 1990-03-22 Spin coating process

Publications (1)

Publication Number Publication Date
JPH03272130A true JPH03272130A (en) 1991-12-03

Family

ID=13534854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7401590A Pending JPH03272130A (en) 1990-03-22 1990-03-22 Spin coating process

Country Status (1)

Country Link
JP (1) JPH03272130A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358740A (en) * 1992-06-24 1994-10-25 Massachusetts Institute Of Technology Method for low pressure spin coating and low pressure spin coating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358740A (en) * 1992-06-24 1994-10-25 Massachusetts Institute Of Technology Method for low pressure spin coating and low pressure spin coating apparatus

Similar Documents

Publication Publication Date Title
JPH03502255A (en) Use of specific mixtures of ethyl lactate and methyl ethyl ketone to remove unwanted peripheral material (e.g. edge beads) from photoresist coated substrates
US6977098B2 (en) Method of uniformly coating a substrate
US20060172441A1 (en) Resist application method and device
JPH03272130A (en) Spin coating process
KR20050111763A (en) Method of manufacturing mask blank
JPH1124282A (en) Device and method for developing resist
JPH02119226A (en) Spin coating of organic solution
KR0164604B1 (en) Coating method and apparatus thereof
JPH08222502A (en) Spin coater
JPH08194316A (en) Method for applying photoresist
JPH0435768A (en) Spin-coating method
JPH05259050A (en) Spin coating on semiconductor substrate and device
JP4203026B2 (en) Application method
JPH04104158A (en) Method for forming photoresist film
JPH09134909A (en) Spin-coating device for thin film formation, semiconductor device and formation of thin film
KR100366367B1 (en) Photoresist coating apparatus and method for forming photoresist film using the same
JPS5982975A (en) Coater for semiconductor substrate
JPH05123632A (en) Method for applying liquid coating material
KR100272521B1 (en) Photoresist coating method of semiconductor device
JPH07263310A (en) Device and method for rotational treatment
JPH04340217A (en) Resist coating method
JPH05259049A (en) Spin coating on semiconductor substrate
JPH0241895B2 (en)
JP3825126B2 (en) Film forming apparatus and film forming method
JPH01286435A (en) Manufacture of semiconductor device and its equipment