JPH03264181A - Method for grinding diamond - Google Patents
Method for grinding diamondInfo
- Publication number
- JPH03264181A JPH03264181A JP2058702A JP5870290A JPH03264181A JP H03264181 A JPH03264181 A JP H03264181A JP 2058702 A JP2058702 A JP 2058702A JP 5870290 A JP5870290 A JP 5870290A JP H03264181 A JPH03264181 A JP H03264181A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- laser beam
- atmosphere
- polishing method
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 40
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims description 17
- 239000012298 atmosphere Substances 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 239000012300 argon atmosphere Substances 0.000 claims abstract 2
- 238000005498 polishing Methods 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、切削工具、メス、ヒートシンク、電子基板
材料などに用いられるダイヤモンドの研磨方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for polishing diamond used for cutting tools, scalpels, heat sinks, electronic substrate materials, etc.
従来の技術
切削工具、例えば、切削用バイトの先端には人造ダイヤ
モンドで形式したチップが設けられているが、このチッ
プのすくい面は切れ味を良くするため研磨されている。A conventional cutting tool, for example, a cutting tool, is provided with a tip in the form of an artificial diamond at the tip, and the rake face of this tip is polished to improve sharpness.
このチップ（ダイヤモンド）のすくい面の研磨方法とし
て、従来、ダイヤモンド粒子を用いた、所謂「とも擦り
法」が用いられている。As a method for polishing the rake face of this chip (diamond), a so-called "tomo-suri method" using diamond particles has conventionally been used.
発明が解決しようとする課題
従来例のダイヤモンドの研磨方法では、研磨速度が０．
１ μｓ／ｍｉｎ、〜０．１ μ＠／ｈ、と遅いので小
さなチップの研磨に長時間を要している。Problems to be Solved by the Invention In the conventional diamond polishing method, the polishing rate is 0.
Since it is slow at 1 μs/min, ~0.1 μ@/h, it takes a long time to polish small chips.
この発明は、前記事情に鑑み効率良くダイヤモンドを研
磨できるようにすることを目的とする。In view of the above circumstances, it is an object of the present invention to enable efficient polishing of diamonds.
課題を解決するための手段
この発明は、ダイヤモンドの表面にレーザビームの側面
を当接せしめることにより前記目的を遠戚しようとする
ものである。Means for Solving the Problems The present invention attempts to achieve the above object by bringing the side surface of a laser beam into contact with the surface of a diamond.
作用
レーザビームの側面がダイヤモンドの表面に当接すると
、該表面は同時に広い範囲に亘りレーザビームの熱エネ
ルギが与えられ、該表面の凹凸部分が除去され平坦な面
となる。When the side surface of the working laser beam comes into contact with the surface of the diamond, the surface is simultaneously given the thermal energy of the laser beam over a wide range, removing the uneven portions of the surface and making it a flat surface.
実施例
この発明の実施例を添付図面により説明するが、同一図
面符号はその名称も機能も同一である。Embodiments An embodiment of the present invention will be described with reference to the accompanying drawings, in which the same reference numerals have the same names and functions.
メタンと水素ガスを原料としてアーク放電プラズマジェ
ットＣＶＤ法によりダイヤモンド１を合成し、該ダイヤ
モンド１をＹＡＧレーザ装置などにより三角形状に切断
して切削用バイトのチップ１を形成する。A diamond 1 is synthesized by an arc discharge plasma jet CVD method using methane and hydrogen gas as raw materials, and the diamond 1 is cut into a triangular shape using a YAG laser device or the like to form a tip 1 of a cutting tool.
このチップ（ダイヤモンド〉１の表面１ａにレーザ発生
装置、例えば、ＹＡＧレーザ装置３のレーザビーム４を
照射する。The surface 1a of this chip (diamond) 1 is irradiated with a laser beam 4 from a laser generator, for example, a YAG laser device 3.
この時の仮想設計面、すなわち、研磨完了時のダイヤモ
ンドの研磨面、１ｂに対する照射角度θは、１５度にし
、レーザビーム４の側面４ａがチップの仮想設計面１ｂ
と平行となるようにする。照射角度θは、レーザビーム
の広がり角やパワー等により適宜調整されることは勿論
である。このＹＡＧレーザ装置３は、平均出力で最大１
２Ｗの連続発振と尖頭値出力で最大２３ＫＷのパルス発
振が可能であり、また、発振したレーザビーム４は焦点
距離５０■のレンズ５により集光される。The irradiation angle θ with respect to the virtual design surface at this time, that is, the polished surface 1b of the diamond upon completion of polishing, is set to 15 degrees, and the side surface 4a of the laser beam 4 is set to the virtual design surface 1b of the chip.
so that it is parallel to Of course, the irradiation angle θ is appropriately adjusted depending on the spread angle, power, etc. of the laser beam. This YAG laser device 3 has an average output of up to 1
Pulse oscillation of a maximum of 23 KW is possible with continuous oscillation of 2 W and peak value output, and the oscillated laser beam 4 is focused by a lens 5 with a focal length of 50 cm.
次に、Ｘ−Ｙテーブル２を矢印２Ｙ方向に移動して、チ
ップの表面１ａをレーザビーム４の側面４ａに当接させ
ると、第２図に示すように、レーザビーム４の側面４ａ
はチップ１の底辺上に位置し、該底辺の全長に亘り同時
に接触して熱エネルギを与える。この状態において、テ
ーブル２を矢印２Ｘ方向に移動すると、チップ１の表面
１ａはレーザビームの側面４ａからの熱エネルギを吸収
して第３図に示すように凹凸部分が除去され、滑らかな
すくい面となる。Next, when the X-Y table 2 is moved in the direction of the arrow 2Y and the surface 1a of the chip is brought into contact with the side surface 4a of the laser beam 4, as shown in FIG.
are located on the bottom side of the chip 1 and simultaneously contact the entire length of the bottom side to provide thermal energy. In this state, when the table 2 is moved in the direction of the arrow 2X, the surface 1a of the chip 1 absorbs thermal energy from the side surface 4a of the laser beam, and as shown in FIG. 3, the uneven portion is removed and a smooth rake surface is formed. becomes.
チップの逃げ面はＹＡＧレーザ装置により切断されたレ
ーザ切断面である。ＹＡＧレーザをダイヤモンドに対し
垂直に照射した場合レーザ切断面は垂直方向に対し７度
の傾きを持つ面となるがこの照射角度を変化させること
により任意の傾きを有する切断面を得ることが出来る。The flank surface of the chip is a laser cut surface cut by a YAG laser device. When a YAG laser is irradiated perpendicularly to a diamond, the laser cut surface has an inclination of 7 degrees with respect to the vertical direction, but by changing this irradiation angle, a cut surface having an arbitrary inclination can be obtained.
この発明の実施例は上記に限定されるものではなく、例
えば、ＹＡＧレーザ装置３を固定し、ダイヤモンド１を
移動する代わりに、前者３を移動し、後者１を固定して
もよいことは勿論である。 又、Ｘ−Ｙテーブル上のダ
イヤモンド１をチャンバの中に入れ、該チャンバ内を真
空にしたり、または、酸素、空気、アルゴンの何れか、
をチャンバ内に供給して雰囲気を形成しながら研磨作業
を行ってもよい。The embodiments of the present invention are not limited to the above; for example, instead of fixing the YAG laser device 3 and moving the diamond 1, it is of course possible to move the former 3 and fix the latter 1. It is. Also, put the diamond 1 on the X-Y table into a chamber and make the inside of the chamber a vacuum, or fill it with oxygen, air, or argon.
The polishing operation may be performed while supplying the wafer into the chamber to form an atmosphere.
なお、このダイヤモンドの研磨方法によりダイヤモンド
の表面を一度粗研磨した後、従来の「とも擦り法」によ
り仕上げ研磨をすると、短時間に、しかも、より滑らか
な研磨面を得ることが出来る。 更に、この研磨方法に
より研磨されたダイヤモンド１は、切削用バイトのみな
らず、メス、ヒートシンク、電子基板材料等へも広く利
用できることは言うまでもない。Note that by rough polishing the surface of a diamond using this diamond polishing method and then final polishing it using the conventional "Tomo-suri method", a smoother polished surface can be obtained in a short time. Furthermore, it goes without saying that the diamond 1 polished by this polishing method can be widely used not only for cutting tools but also for scalpels, heat sinks, electronic board materials, etc.
発明の効果
この発明に係るダイヤモンドの研磨方法は、ダイヤモン
ドの表面にレーザビームの側面を当接せしめるので、レ
ーザビームがダイヤモンドの表面と広い範囲にわたり、
同時に接触して熱エネル玉゛−を与え、該表面の凹凸部
分を除去し平坦な面とする。Effects of the Invention In the diamond polishing method according to the present invention, the side surface of the laser beam is brought into contact with the diamond surface, so that the laser beam covers a wide area with the diamond surface.
At the same time, they come into contact and apply a thermal energy ball to remove the uneven portions of the surface and make it a flat surface.
そのため、効率良くダイヤモンドの研磨作業を行うこと
ができる。Therefore, diamond polishing work can be performed efficiently.
第１図は本発明の実施例を示す正面図、第２図は平面図
の一部を示す略図、第３図は第１の■−■線断面の拡大
図、である。
１ ・・・・・・ ダイヤモンド
３ ・・・・・・ ＹＡＧレーザ装置
４ ・・・・・・ レーザビーム
４ａ ・・・・・・ 側面
図FIG. 1 is a front view showing an embodiment of the present invention, FIG. 2 is a schematic diagram showing a part of the plan view, and FIG. 3 is an enlarged view of the first cross section taken along the line ■--■. 1...Diamond 3...YAG laser device 4...Laser beam 4a...Side view
Claims (8)
せしめることを特徴とするダイヤモンドの研磨方法(1) A diamond polishing method characterized by bringing the side surface of a laser beam into contact with the surface of the diamond
１５度であることを特徴とする請求項第１記載のダイヤ
モンドの研磨方法(2) The irradiation angle of the laser beam with respect to the virtual design surface is
The diamond polishing method according to claim 1, characterized in that the polishing angle is 15 degrees.
ることを特徴とする請求項第１記載のダイヤモンドの研
磨方法(3) The diamond polishing method according to claim 1, wherein the laser beam is generated by a YAG laser device.
の側面を当接せしめることを特徴とするダイヤモンドの
研磨方法(4) A diamond polishing method characterized by bringing the side surface of a laser beam into contact with the surface of the diamond in an atmosphere.
イヤモンドの研磨方法(5) A diamond polishing method characterized in that the atmosphere is an oxygen atmosphere
イヤモンドの研磨方法(6) A diamond polishing method characterized in that the atmosphere is an air atmosphere.
るダイヤモンドの研磨方法(7) A diamond polishing method characterized in that the atmosphere is an argon atmosphere
イヤモンドの研磨方法(8) A diamond polishing method characterized in that the atmosphere is a vacuum atmosphere.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058702A JPH03264181A (en) | 1990-03-10 | 1990-03-10 | Method for grinding diamond |
| EP91103604A EP0446811A1 (en) | 1990-03-10 | 1991-03-08 | Method and apparatus for grinding diamond and diamond product using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058702A JPH03264181A (en) | 1990-03-10 | 1990-03-10 | Method for grinding diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03264181A true JPH03264181A (en) | 1991-11-25 |
Family
ID=13091853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2058702A Pending JPH03264181A (en) | 1990-03-10 | 1990-03-10 | Method for grinding diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03264181A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5483038A (en) * | 1992-04-23 | 1996-01-09 | Sumitomo Electric Industries, Ltd. | Method of working diamond with ultraviolet light |
| KR20140026749A (en) * | 2012-08-23 | 2014-03-06 | 주식회사 엘지화학 | Apparatus and method for polishing glass substrate |
-
1990
- 1990-03-10 JP JP2058702A patent/JPH03264181A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5483038A (en) * | 1992-04-23 | 1996-01-09 | Sumitomo Electric Industries, Ltd. | Method of working diamond with ultraviolet light |
| KR20140026749A (en) * | 2012-08-23 | 2014-03-06 | 주식회사 엘지화학 | Apparatus and method for polishing glass substrate |
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