JPH03263374A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH03263374A JPH03263374A JP6303690A JP6303690A JPH03263374A JP H03263374 A JPH03263374 A JP H03263374A JP 6303690 A JP6303690 A JP 6303690A JP 6303690 A JP6303690 A JP 6303690A JP H03263374 A JPH03263374 A JP H03263374A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- support rod
- cathode
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000012212 insulator Substances 0.000 claims abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 7
- 239000010445 mica Substances 0.000 abstract description 4
- 229910052618 mica group Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 238000010292 electrical insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明（よ、半導体装置に係り、特にサイリスク構造
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] This invention relates to a semiconductor device, and particularly relates to a cyrisk structure.
第５図（ａ）、（ｂ）は従来の半導体装置の構造の一例
としてサイリスク構造を示す断面図である。FIGS. 5(a) and 5(b) are cross-sectional views showing a cyrisk structure as an example of the structure of a conventional semiconductor device.
第５図（ａ）において、１は半導体基体で、Ｍ。In FIG. 5(a), 1 is a semiconductor substrate;
板２にロー付けされており、半導体基体１の外周部はシ
リコンゴム３等により表面処理され、半導体基体１の特
性を保護している。なお、以下では半導体基体１とＭＯ
Ｏ２０まとめてチップ４と呼ぶ。It is soldered to a plate 2, and the outer periphery of the semiconductor substrate 1 is surface-treated with silicone rubber 3 or the like to protect the characteristics of the semiconductor substrate 1. In addition, in the following, semiconductor substrate 1 and MO
O20 is collectively referred to as chip 4.
チップ４の陰極側には補償板５が設けてあり、さらには
その電極を取り出すために陰極６を設けている。この陰
極６には、もう一方の陽極７との絶縁材として、セラミ
ック筒８を設けている。陽極７とセラミ・ツク筒８は、
セラミック筒８に口付けされている溶接リシグ９に溶接
されている。A compensation plate 5 is provided on the cathode side of the chip 4, and a cathode 6 is further provided to take out the electrode. This cathode 6 is provided with a ceramic tube 8 as an insulating material from the other anode 7. The anode 7 and the ceramic tube 8 are
It is welded to a welding resig 9 that is attached to the ceramic cylinder 8.
チ・ンブ４のもう１つのゲート電極１０は、絶縁物から
なるゲート支持棒１１を通し、はぼ直角に曲げて陰極６
との絶縁をするためにスリーブ１２を通しである。ゲー
ト支持棒１１は作業性をよくするために、第５図（ｂ）
に示すように、下部は開放状態であり、上面中心に透孔
１１Ａが、また側面に下端から上端に向けての切り込み
溝１１Ｂが（１）
（２）
形成されている。また、デー１−電極１０を外部へ取り
出すために、セラ妃ツク筒８にゲートパイプブ１３を通
してあり、このゲートパイプ１３にゲ１−電極１０が通
り、外部へつながることになる。The other gate electrode 10 of the tube 4 is connected to the cathode 6 by passing it through a gate support rod 11 made of an insulator and bending it at a nearly right angle.
The sleeve 12 is passed through for insulation. In order to improve workability, the gate support rod 11 is arranged as shown in Fig. 5(b).
As shown in the figure, the lower part is in an open state, and a through hole 11A is formed in the center of the upper surface, and a cut groove 11B is formed in the side surface from the lower end to the upper end (1) (2). In addition, in order to take out the electrode 10 to the outside, a gate pipe 13 is passed through the cell cylinder 8, and the electrode 10 passes through the gate pipe 13 and is connected to the outside.
このゲートパイプ１３は、チップ４を安定させておくた
めにＮ２ガスを封入し、ジ−１〜バイブ１３をカシメて
封止することでチ・ツブ４は長期間安定した状態となる
。This gate pipe 13 is filled with N2 gas to keep the chip 4 stable, and by caulking and sealing the g-1 to the vibrator 13, the chip 4 is kept in a stable state for a long period of time.
ゲート電極１０は、チップ４に接触させるために、ゲー
ト支持板１１の下に平座金１４と皿バネ１５を挿入し、
安定した圧力で、ヂ・ツブ４にゲト電極１０を圧接接続
させている。In order to make the gate electrode 10 contact the chip 4, a flat washer 14 and a disc spring 15 are inserted under the gate support plate 11.
The gate electrode 10 is pressure-connected to the tube 4 with stable pressure.
この皿ばね１５ζよ、ＧＴＯ等のゲート電流が大きく、
高い圧接力が必要なために使用されている。This disc spring 15ζ has a large gate current such as GTO,
It is used because high contact force is required.
〔発明が解決しようとする課題〕
上記のように構成された従来例では、ゲート電極１０の
曲げ方が不足すると、平座金１４とスリーブ１２が接触
することがあり、繰り返し接触することで、スリーブ１
２が破損し、ゲート電極１０と平座金１４が接触し、ゲ
ート電極１０と陰極６が′／フーＩ・する問題点があっ
た。[Problems to be Solved by the Invention] In the conventional example configured as described above, if the gate electrode 10 is bent insufficiently, the flat washer 14 and the sleeve 12 may come into contact with each other, and repeated contact may cause the sleeve to 1
There was a problem that the gate electrode 10 and the flat washer 14 came into contact with each other, and the gate electrode 10 and the cathode 6 were damaged.
この発明（よ、上記のような問題点を解決するためにな
されたものて、デー１−電極と陰極のショトを防止する
ことができる半導体装置を得ることを目的とする。This invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a semiconductor device that can prevent short-circuits between the electrode and the cathode.
この発明に係る半導体装置は、絶縁物からなるゲート支
持枠を介してゲ−］・電極をチップに圧接接続ぜしめる
皿ばねを有し、前記ゲート電極の陽極側でのショートを
防止する絶縁手段をゲート支持板と皿ばねとの間に設け
たものである。The semiconductor device according to the present invention has a disc spring that press-connects the gate electrode to the chip via a gate support frame made of an insulating material, and an insulating means for preventing short circuit on the anode side of the gate electrode. is provided between the gate support plate and the disc spring.
この発明においては、陰極側に電気的絶縁手段を配置し
たことから、ゲート電極の曲げ加工の如何によらず、圧
接力を加えてもデー１−電極と陰極がショー１・状態に
なることはない。In this invention, since the electrical insulating means is arranged on the cathode side, regardless of the bending process of the gate electrode, the electrode and cathode will not be in the show 1 state even if pressure contact is applied. do not have.
以下、この発明の一実施例を図面に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図はこの発明の一実施例を示すす（ＩＪスタ（３）
（４）
構造の断面図である。第１図において、第５図と同一符
号；よ同−構成部分を示し、１６【よマイカワッシャで
、陰極６側、つまりゲート支持棒１１と平座金１４の間
に設けた電気的絶縁手段として用いられ、スリーブ１２
が破損しても、ゲーＩ−電極１０と平座金１４が接触し
ないように設けである。FIG. 1 is a sectional view of an IJ star (3) (4) structure showing an embodiment of the present invention. In FIG. 1, the same reference numerals as in FIG. [A mica washer is used as an electrical insulating means provided on the cathode 6 side, that is, between the gate support rod 11 and the flat washer 14, and the sleeve 12
This is provided so that even if the gate I-electrode 10 and the flat washer 14 are damaged, they do not come into contact with each other.
この構成によれば、皿ばね１５の圧接力で、ゲート支持
棒１１を繰り返し圧接し、デー１−電極１０を千・ツブ
４に圧接接触させ、例えばスリーブ１２が破損してもゲ
ート電極１０と平座金１４とは接触せず、ゲート電極１
０と陰極６とがンヨト状態になることはない。According to this configuration, the gate support rod 11 is repeatedly pressed by the pressing force of the disc spring 15, and the electrode 10 is brought into pressure contact with the tube 4, so that even if the sleeve 12 is damaged, for example, the gate electrode 10 is The gate electrode 1 does not contact the flat washer 14.
0 and the cathode 6 are never in a disconnected state.
なお、上記実施例では、デー１−支持棒１１と平座金１
４との間に電気的絶縁手段としてマイカワッシャ１６を
介在せしめてデー１−電極１０と平座金１４との絶縁を
はかったが、電気的絶縁手段は、これに限らず第２図に
示すように、ゲート支持棒１１と皿ばね１５の間に絶縁
性のセラミック板１７を設け、スリーブ１２が破損した
場合に発生するデー１−電極１０と陰極６とのシｇ−１
・を防止するようにしてもよい。In addition, in the above embodiment, Day 1 - Support rod 11 and flat washer 1
Although the mica washer 16 was interposed as an electrical insulating means between the electrode 10 and the flat washer 14, the electrical insulating means is not limited to this. In addition, an insulating ceramic plate 17 is provided between the gate support rod 11 and the disc spring 15 to prevent the damage caused when the sleeve 12 is damaged.
・It may be possible to prevent this.
また、第３図に示すように、ゲート支持棒１１の底部は
開放された状態となっているため、デー１−支持棒を第
１のゲート支持棒１１ａと第２のゲト支持棒１１ｂＪｅ
組み合わせ式にして、かつ第１、第２のデー１−支持棒
１１ａ、１１ｂを（よずれに＜＜シて電気的絶縁手段と
してもよく、これにより、ゲート電極１０と陰極６のシ
ョー１−を防止するようにしてもよい。Further, as shown in FIG. 3, since the bottom of the gate support rod 11 is open, the day 1 support rod is connected to the first gate support rod 11a and the second gate support rod 11bJ.
The first and second supporting rods 11a and 11b may be used as electrical insulating means in combination. It may also be possible to prevent this.
上記第３図の実施例のゲート支持棒１１ａ。The gate support rod 11a of the embodiment shown in FIG. 3 above.
１１ｂの組合せは、第４図に示すように、第１゜第２の
ゲート支持棒１１ａ、１１ｂを色々と変形させる乙とて
、組合せ式のゲート支持棒とすることができろ。As shown in FIG. 4, the combination of gate support rods 11b can be made into a combination type gate support rod by variously deforming the first and second gate support rods 11a and 11b.
以上説明したように、この発明は、デー１−電極の陽極
側でのンヨートを防止する電気的絶縁手段を具備したの
で、簡単な方法で、かつ安価にゲト電極と陰極とのンヨ
ートを防止することができる。As explained above, the present invention is equipped with an electrical insulating means for preventing thermal interference between the gate electrode and the cathode in a simple and inexpensive manner. be able to.
（５〉 （６）(5> (6)
第１図はこの発明の一実施例を示す半導体装置の断面図
、第２図２第３図はこの発明の他の実施例をそれぞれ示
す要部の断面図、第４図は、第３図の実施例の変形例を
示す断面図、第５図（ａ）。
（ｂ＞は従来の半導体装置を示す断面図および要部の詳
細を示す拡大断面図である。
図にわいて、１は半導体基体、２はＭｏ板、３はシリコ
ンゴム、４はチ、ンプ、５は補償板、６は陰極、７は陽
極、８はセラミック筒、９は溶接リング、１０はゲート
電極、１１８は第１のゲート支持棒、Ｉｌｂは第２のゲ
ート支持棒、１２はスリーブ、１３ばゲートパイプ、１
４は平座金、１５は皿ばね、１６はマイカワッシャ、１
７はセラミック板である。
なお、各図中の同一符号は同一また（よ相当部分を小す
。FIG. 1 is a cross-sectional view of a semiconductor device showing one embodiment of the present invention, FIG. 2 is a cross-sectional view of a main part showing another embodiment of the invention, and FIG. FIG. 5(a) is a sectional view showing a modification of the embodiment. (b> is a cross-sectional view showing a conventional semiconductor device and an enlarged cross-sectional view showing details of main parts. In the figure, 1 is a semiconductor substrate, 2 is a Mo plate, 3 is a silicone rubber, and 4 is a chip. , 5 is a compensation plate, 6 is a cathode, 7 is an anode, 8 is a ceramic cylinder, 9 is a welding ring, 10 is a gate electrode, 118 is a first gate support rod, Ilb is a second gate support rod, 12 is a sleeve , 13ba gate pipe, 1
4 is a flat washer, 15 is a disc spring, 16 is a mica washer, 1
7 is a ceramic plate. Note that the same reference numerals in each figure represent the same or equivalent parts.
Claims (1)
れて設けられた陰極と、この陰極と絶縁され、かつ絶縁
物からなるゲート支持棒に支持されたゲート電極とを備
え、前記ゲート電極を前記チップに前記ゲート支持棒を
介して圧接接触せしめる皿ばねを有する半導体装置にお
いて、前記ゲート電極の陰極側でのショートを防止する
電気的絶縁手段を前記ゲート支持棒と皿ばねとの間に設
けたことを特徴とする半導体装置。The gate electrode comprises an anode having a chip, a cathode facing and insulated from the anode, and a gate electrode insulated from the cathode and supported by a gate support rod made of an insulator. In a semiconductor device having a disc spring that is brought into pressure contact with the chip via the gate support rod, an electrical insulating means for preventing short circuit on the cathode side of the gate electrode is provided between the gate support rod and the disc spring. A semiconductor device characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6303690A JPH03263374A (en) | 1990-03-13 | 1990-03-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6303690A JPH03263374A (en) | 1990-03-13 | 1990-03-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03263374A true JPH03263374A (en) | 1991-11-22 |
Family
ID=13217701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6303690A Pending JPH03263374A (en) | 1990-03-13 | 1990-03-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03263374A (en) |
-
1990
- 1990-03-13 JP JP6303690A patent/JPH03263374A/en active Pending
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