JPH03259932A - Modification of surface of polymer molding with vacuum ultraviolet ray - Google Patents
Modification of surface of polymer molding with vacuum ultraviolet rayInfo
- Publication number
- JPH03259932A JPH03259932A JP5944590A JP5944590A JPH03259932A JP H03259932 A JPH03259932 A JP H03259932A JP 5944590 A JP5944590 A JP 5944590A JP 5944590 A JP5944590 A JP 5944590A JP H03259932 A JPH03259932 A JP H03259932A
- Authority
- JP
- Japan
- Prior art keywords
- irradiated
- vacuum ultraviolet
- ultraviolet light
- light source
- gas discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 18
- 238000012986 modification Methods 0.000 title abstract description 4
- 230000004048 modification Effects 0.000 title abstract description 4
- 238000000465 moulding Methods 0.000 title abstract 3
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 17
- -1 polytetrafluoroethylene Polymers 0.000 abstract description 17
- 229920001343 polytetrafluoroethylene Polymers 0.000 abstract description 5
- 125000003118 aryl group Chemical group 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 30
- 239000007789 gas Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000004698 Polyethylene Substances 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical compound FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2023/00—Use of polyalkenes or derivatives thereof as moulding material
- B29K2023/04—Polymers of ethylene
- B29K2023/06—PE, i.e. polyethylene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
- B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
- B29K2027/18—PTFE, i.e. polytetrafluorethene, e.g. ePTFE, i.e. expanded polytetrafluorethene
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高分子成形品表面の改質方法に関し、より詳細
には真空紫外光を照射して高分子成形品の表面を改質す
る方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for modifying the surface of a polymer molded article, and more specifically, a method for modifying the surface of a polymer molded article by irradiating vacuum ultraviolet light. Regarding.
Ｓ、ラザレら（Ｓ、Ｌａｚａｒｅ、 Ｒ，５ｒｉｎｉｖ
ａｓａｎ、 Ｊ、Ｐｈｙｓ、ｃｈｅｍ、、Ｖｏｌ、９０
，２１２４（１９８６） ）は、高分子フィルムの表面
を、エキシマ−レーザーなどの高強度紫外レーザーで特
定部位を照射すると、照射直後に容易に照射部表面が改
質され、現像工程等の後処理を行なうことなく、直接に
形態学的な凹凸が形成されることを報告している。S, Lazare et al.
asan, J, Phys, chem,, Vol, 90
, 2124 (1986)) found that when a specific part of the surface of a polymer film is irradiated with a high-intensity ultraviolet laser such as an excimer laser, the surface of the irradiated part is easily modified immediately after the irradiation, and post-processing such as the development process is carried out. It has been reported that morphological irregularities can be formed directly without any process.
このように、紫外レーザーを用いた高分子表面の加工法
は、精度良く、高速で行なうことができ、また、レーザ
ーの照射条件を制御することで、照射樹脂表面の構造特
性や機能性を向上することができるという特徴があり、
多彩な表面反応を制御良く行なうことが可能な手法であ
る。In this way, polymer surface processing methods using ultraviolet lasers can be performed with high precision and high speed, and by controlling the laser irradiation conditions, the structural characteristics and functionality of the irradiated resin surface can be improved. It has the characteristic of being able to
This is a method that allows a variety of surface reactions to be carried out with good control.
また、Ｓ、クーパーら［Ｓ、Ｋｕｐｅｒ ａｎｄ Ｍ、
５ｔｕｋｅ。Also, S. Kuper and M.
5tuke.
Ａｐｐｌ、Ｐｈｙｓ、Ｌｅｔｔ、 、 Ｖｏｌ 、５４
．４ （１９８９） ）は、パルス幅が３００ｘｌＯ−
”秒の極短パルス紫外光（波長：２４８ｎｍ）を用いる
と、良好なエツチング特性が得られると報告している。Appl, Phys, Lett, Vol. 54
．． 4 (1989)), the pulse width was 300xlO-
``It has been reported that good etching characteristics can be obtained by using second ultrashort pulse ultraviolet light (wavelength: 248 nm).
更に、Ｐ、Ｅ、ダイヤ−ら［Ｐ、Ｅ、Ｄｙｅｒ ａｎｄ
Ｊ。Furthermore, P, E, Dyer et al. [P, E, Dyer and
J.
５ｉｄｈｕ、Ｊ、Ｏｐｔ、Ｓｏｃ、Ａｍ、Ｂ、Ｖｏｌ、
３，７９２（１９８６）） 、Ｋ。5idhu, J, Opt, Soc, Am, B, Vol.
3,792 (1986)), K.
Ａ、ヴアリエフら（Ｋ、＾、シａｌｉｅｖ、Ｌ、Ｖ、Ｖ
ｅｌｉｋｏｖ、Ｓ。A, Vualiev et al. (K, ^, Sialev, L, V, V
elikov, S.
Ｄ、Ｄｕｓｈｅｎｋｏｖ＋ａｎｄ Ａ、Ｖ、Ｍｉｔｒｏ
ｆａｎｏｖ、Ｉｎａｔｒｗｍ Ｅｘｐ。D.Dushenkov+and A.V.Mitro
fanov, Inatrwm Exp.
Ｔｅｃｈ、 、 Ｖｏｌ 、２６． Ｎｏ、４． Ｐｔ
、 ２．９９１ （１９８４） ）は、Ｆ２エキシマレ
ーザ−（波長： １５７ｎｍ）や重水素ランプを用いた
真空紫外光照射によって、ポリイミド、ポリエステル、
ポリエチレン、ポリプロピレン、ポリアクリレート等の
光加工を試みている。Tech, Vol. 26. No, 4. Pt
, 2.991 (1984)), polyimide, polyester,
We are trying optical processing of polyethylene, polypropylene, polyacrylate, etc.
［発明が解決しようとする課Ｒ］
しかしながら、上記ラザレらの紫外光を用いた方法では
、高分子内に芳香環、多重結合等の紫外光を吸収する部
位が必要であるため、単結合のみで槽底されている高分
子では効果的に表面反応を行なうことができなかった。[Problem R to be solved by the invention] However, the method using ultraviolet light by Lazare et al. requires sites that absorb ultraviolet light, such as aromatic rings and multiple bonds, in the polymer, so only single bonds can be used. Surface reactions could not be carried out effectively with polymers placed at the bottom of the tank.
例えば、ポリ四フッ化エチレン（テフロン）の場合、パ
ルス幅が１０−８秒程度の高強度パルス紫外光を照射す
ると、照射表面が黒化するという欠点があった。For example, in the case of polytetrafluoroethylene (Teflon), when irradiated with high-intensity pulsed ultraviolet light having a pulse width of about 10 -8 seconds, the irradiated surface blackens.
またクーパーらの方法では、極短パルス光を発生させる
には、極めて高度なレーザー技術が必要であり、発振自
体も不安定であるという欠点があった。Furthermore, Cooper et al.'s method required extremely sophisticated laser technology to generate ultrashort pulses of light, and the oscillation itself was unstable.
更にダイヤ−やヴアリエフらの方法では、Ｆｔレーザー
の発振が不安定であることや、Ｆ２レーザーや重水素ラ
ンプでは光出力が小さいという欠点があるために迅速・
効果的な表面改質を行なうことができなかった。Furthermore, the method of Diamond and Vuaryev et al. has the disadvantage that the oscillation of Ft laser is unstable, and that the light output of F2 laser and deuterium lamp is low.
Effective surface modification could not be carried out.
本発明は上記従来の欠点を解消し、芳香環や多重結合を
含まない高分子についても適用可能であり、高分子材質
の特長を損うことなく、残査等の不純物が完全に樹脂表
面から除去され、しかも簡便、かつ効果的に光ビームに
よりエツチングする方法を提供することを目的としてい
る。The present invention solves the above-mentioned conventional drawbacks, and can be applied to polymers that do not contain aromatic rings or multiple bonds. Impurities such as residues can be completely removed from the resin surface without impairing the characteristics of the polymer material. The object of the present invention is to provide a simple and effective method for etching using a light beam.
上記目的を達成するために、本発明の改質方法において
は、波長１９０ｎ＊以下の真空紫外光を高分子成形品に
照射する。In order to achieve the above object, in the modification method of the present invention, a polymer molded article is irradiated with vacuum ultraviolet light having a wavelength of 190n* or less.
本発明の方法において用いる真空紫外光の光源としては
、希ガス放電プラズマ光源が用いられる。A rare gas discharge plasma light source is used as the vacuum ultraviolet light source used in the method of the present invention.
この光源は、例えばＪ、ジローら（Ｊ、５ｈｉｌｏ。This light source can be used, for example, in J. Giro et al.
Ａ、Ｆｉｓｈｅｒ ａｎｄ Ｎ、Ｒｏｓｔｏｋｅｒ＋Ｐ
ｈｙｓ、Ｒｅｖ、Ｌｅｔｔ、、ｖａｔ。A, Fisher and N, Rostoker+P
hys, Rev, Lett,, vat.
４０．５’１５（１９７８） ）によるガスバフ型Ｚピ
ンチ法などによれば、強いピンチ効果を利用して高温度
にした希ガス放電プラズマを利用するもので、波長１９
０ｎｍ以下のパルス光を十分な強度で放射できる装置で
あり、シンクロトロン放射光装置のように巨大な設備を
必要とせず、Ｆ２エキシマレーザ−光を重水素ランプ光
と比較しても、効率、光強度の点で優れた特長を有する
光源である。40.5'15 (1978)), the gas buff type Z-pinch method uses rare gas discharge plasma heated to high temperature by taking advantage of the strong pinch effect, and has a wavelength of 19.
It is a device that can emit pulsed light of 0 nm or less with sufficient intensity, does not require huge equipment like a synchrotron radiation device, and has a high efficiency when comparing F2 excimer laser light with deuterium lamp light. This is a light source that has an excellent feature in terms of light intensity.
また、真空紫外光領域には、炭素−炭素や、炭素−水素
等の単結合の吸収があるので、真空紫外光を用いること
によって、紫外光では十分に加工できなかった高分子材
料に対しても、効果的に加工を行なうことができる。In addition, in the vacuum ultraviolet light region, there is absorption of single bonds such as carbon-carbon and carbon-hydrogen, so by using vacuum ultraviolet light, it is possible to process polymer materials that cannot be processed sufficiently with ultraviolet light. can also be processed effectively.
なお波長の下限は数ｎ’ｓであり、また、１９０ｎｓを
越える長波長の光を照射した場合、単結合のみで槽底さ
れている高分子はこの波長領域の光吸収が小さいために
、熱的現象による反応の割合が増大し、真空紫外光を照
射したときの光反応のような付加価値の高い改質を行な
うことが困難である。Note that the lower limit of the wavelength is several n's, and when irradiated with light with a long wavelength exceeding 190 ns, polymers whose bottom is made up of only single bonds will not absorb heat in this wavelength range. The rate of reactions due to chemical phenomena increases, making it difficult to carry out high value-added modifications such as photoreactions when irradiated with vacuum ultraviolet light.
更に、本発明によれば、高分子成形品の改質したい部位
に相当するマスク（金属板製パターンなど）を通過させ
た光を照射することで、希望する照射部分のみに、加工
を行なうことも可能である。Furthermore, according to the present invention, by irradiating light that has passed through a mask (metal plate pattern, etc.) corresponding to the part of the polymer molded product that is desired to be modified, processing can be performed only on the desired irradiated part. is also possible.
本発明における高分子成形品には、フィルム。The polymer molded article in the present invention includes a film.
シート、繊維、繊維強化樹脂、樹脂成形品等が含まれる
。Includes sheets, fibers, fiber reinforced resins, resin molded products, etc.
また、これら成形品の材料は、非品性、結晶性のいづれ
であってもよく、例えば、ポリ四フッ化エチレン、ポリ
三フフ化塩化エチレン、ポリフッ化ビニリデン、ポリエ
チレン、ポリプロピレン、ポリエチレンテレフタレート
、ポリエチレンナフタレート、ポリオキシエチレン、ポ
リスチレン、ポリイミド、ポリ塩化ビニル、ポリメチル
メタクリレート、ポリビニルアルコール樹脂、これら樹
脂モノマーの共縮重合物、またはこれら樹脂の混合物を
挙げることができる。In addition, the materials for these molded products may be either non-grade or crystalline, such as polytetrafluoroethylene, polytrifluorochloroethylene, polyvinylidene fluoride, polyethylene, polypropylene, polyethylene terephthalate, polyethylene Examples include naphthalate, polyoxyethylene, polystyrene, polyimide, polyvinyl chloride, polymethyl methacrylate, polyvinyl alcohol resin, cocondensation products of these resin monomers, and mixtures of these resins.
真空紫外光の照射は、照射試料室の雰囲気を真空、また
は不活性ガス雰囲気にして光源の窓近くに照射試料を置
くだけで良い。また、更に集光したい場合には、凹面反
射鏡やカルシウムフッ素リチウムフッ素の材質の凸レン
ズを用いる。Irradiation with vacuum ultraviolet light can be accomplished by simply setting the irradiation sample chamber to a vacuum or inert gas atmosphere and placing the irradiation sample near the window of the light source. If it is desired to further condense the light, a concave reflecting mirror or a convex lens made of calcium fluorine lithium fluorine is used.
以下、本発明を実施例により、更に詳細に説明する。Hereinafter, the present invention will be explained in more detail with reference to Examples.
〔実施例］
実施例１
ポリ四フフ化エチレン（テフロン）シートに、希ガス放
電プラズマ光源の真空紫外光を１００パルス照射した。[Examples] Example 1 A polytetrafluoroethylene (Teflon) sheet was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source.
照射面は黒化することなく、良好なエツチング特性が得
られ、照射部の周囲には残金等の不純物は完全に除去さ
れていた。エツチング深さは、６μｍであった。Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 6 μm.
実施例２
ポリ四フフ化エチレン（テフロン）シートに、希ガス放
電プラズマ光源の真空紫外光を５０パルス照射した。照
射面は黒化することなく、良好なエツチング特性が得ら
れ、照射部の周囲には残金等の不純物は完全に除去され
ていた。エツチング深さは、３μｍであった。Example 2 A polytetrafluoroethylene (Teflon) sheet was irradiated with 50 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 3 μm.
実施例３
ポリビニルアルコールフィルムに、希ガス放電プラズマ
光源の真空紫外光を１００パルス照射した。照射面は黒
化することなく、良好なエツチング特性が得られ、照射
部の周囲には残金等の不純物は完全に除去されていた。Example 3 A polyvinyl alcohol film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area.
エツチング深さは、６μｍであった。The etching depth was 6 μm.
実施例４
ポリ三フフ化塩化エチレン（ダイフロン）シートに、希
ガス放電プラズマ光源の真空紫外光を１００パルス照射
した。照射面は黒化することなく、良好なエツチング特
性が得られ、照射部の周囲には残金等の不純物は完全に
除去されていた。エツチング深さは、８μｍであった。Example 4 A polytrifluorochloroethylene (Daiflon) sheet was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 8 μm.
実施例５
ポリ三フフ化塩化エチレン（ダイフロン）シートに、希
ガス放電プラズマ光源の真空紫外光を５０パルス照射し
た。照射面は黒化することなく、良好なエツチング特性
が得られ、照射部の周囲には残金等の不純物は完全に除
去されていた。エツチング深さは、４μｍであった。Example 5 A polytrifluorochloroethylene (Daiflon) sheet was irradiated with 50 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 4 μm.
実施例６
ポリエチレンフィルムに、希ガス放電プラズマ光源の真
空紫外光を１００パルス照射した。照射面は黒化するこ
となく、良好なエツチング特性が得られ、照射部の周囲
には残金等の不純物は完全に除去されていた。エツチン
グ深さは、４μｍであった・
実施例７
ポリプロピレンフィルムに、希ガス放電プラズマ光源の
真空紫外光を１００パルス照射した。Example 6 A polyethylene film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 4 μm. Example 7 A polypropylene film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source.
照射面は黒化することなく、良好なエツチング特性が得
られ、照射部の周囲には残金等の不純物は完全に除去さ
れていた。エツチング深さは、３．８μｍであった。更
に、照射面に微細構造が形成された。Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 3.8 μm. Furthermore, fine structures were formed on the irradiated surface.
実施例８
ポリエチレンテレフタレートフィルムに、希ガス放電プ
ラズマ光源の真空紫外光を１００パルス照射した。良好
なエツチング特性が得られ、照射部の周囲には残金等の
不純物は完全に除去されていた。エツチング深さは、５
μｍであった。更に、照射面に微細構造が形成された。Example 8 A polyethylene terephthalate film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained, and impurities such as residual metal were completely removed around the irradiated area. The etching depth is 5
It was μm. Furthermore, fine structures were formed on the irradiated surface.
実施例９
ポリエチレンナフタレートフィルムに、希ガス放電プラ
ズマ光源の真空紫外光を１００パルス照射した。良好な
エツチング特性が得られ、照射部の周囲には残金等の不
純物は完全に除去されていた。エツチング深さは、３μ
ｍであった。Example 9 A polyethylene naphthalate film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained, and impurities such as residual metal were completely removed around the irradiated area. Etching depth is 3μ
It was m.
更に、照射面に微細構造が形成された。Furthermore, fine structures were formed on the irradiated surface.
実施例１０
ポリオキシエチレンフィルムに、希ガス放電プラズマ光
源の真空紫外光を１００パルス照射した。照射面は黒化
することなく、良好なエツチング特性が得られ、照射部
の周囲には残金等の不純物は完全に除去されていた。エ
ツチング深さは、４μｍであった。更に、照射面に微細
構造が形成された。Example 10 A polyoxyethylene film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 4 μm. Furthermore, fine structures were formed on the irradiated surface.
実施例１１
ポリスチレンフィルムに、希ガス放電プラズマ光源の真
空紫外光を１００パルス照射した。照射面は黒化するこ
となく、良好なエツチング特性が得られ、照射部の周囲
には残金等の不純物は完全に除去されていた。エツチン
グ深さは、３μｍであった。更に、照射面に微細構造が
形成された。Example 11 A polystyrene film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 3 μm. Furthermore, fine structures were formed on the irradiated surface.
実施例１２
ポリイミドフィルムに、希ガス放電プラズマ光源の真空
紫外光を１００パルス照射した。照射面は黒化すること
なく、良好なエツチング特性が得られ、照射部の周囲に
は残金等の不純物は完全に除去されていた。エツチング
深さは、０．８μｍであった。Example 12 A polyimide film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 0.8 μm.
実施例１３
ポリ塩化ビニルフィルムに、希ガス放電プラズマ光源の
真空紫外光を１００パルス照射した。Example 13 A polyvinyl chloride film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source.
照射面は黒化することなく、良好なエツチング特性が得
られ、照射部の周囲には残金等の不純物は完全に除去さ
れていた。エツチング深さは、１２μｍであった。Good etching characteristics were obtained without blackening of the irradiated surface, and impurities such as residual metal were completely removed around the irradiated area. The etching depth was 12 μm.
実施例１４
ポリメチルメタクリレートフィルムに、希ガス放電プラ
ズマ光源の真空紫外光を１００パルス照射した。照射面
は黒化することなく、良好なエツチング特性が得られ、
照射部の周囲には残金等の不純物は完全に除去されてい
た。エツチング深さは、６．４ μｍであった。Example 14 A polymethyl methacrylate film was irradiated with 100 pulses of vacuum ultraviolet light from a rare gas discharge plasma light source. Good etching properties are obtained without blackening the irradiated surface.
Impurities such as residual gold around the irradiated area were completely removed. The etching depth was 6.4 μm.
本発明によれば、真空紫外光による非熱的な光化学反応
によって高分子化合物が反応する。According to the present invention, a polymer compound reacts by a non-thermal photochemical reaction using vacuum ultraviolet light.
従って、本発明の方法は照射部位以外の周辺には何らの
熱的損傷を伴わず、かつ真空紫外光により切削された断
片は、周囲には付着しておらず、極めて効果的な処理方
法である。Therefore, the method of the present invention does not cause any thermal damage to the surrounding area other than the irradiated area, and the fragments cut by vacuum ultraviolet light do not adhere to the surrounding area, making it an extremely effective processing method. be.
更に本発明は、極短パルス光の場合と比べて真空紫外光
の光源が性能やコストの点で有利である。Furthermore, in the present invention, a vacuum ultraviolet light source is advantageous in terms of performance and cost compared to the case of ultrashort pulsed light.
また、真空紫外光の照射によって形成される模様の形状
、大きさ、及び除去されるフィルムの量、すなわち切削
される深さは、照射する真空紫外光の波長、単位面積当
りの強度、パルス数（照射時間）により制御できる。In addition, the shape and size of the pattern formed by vacuum ultraviolet light irradiation, and the amount of film removed, that is, the cutting depth, are determined by the wavelength of the vacuum ultraviolet light to be irradiated, the intensity per unit area, and the number of pulses. It can be controlled by (irradiation time).
更に本発明の方法は、非照射体が、薄膜状であろうと、
厚膜状であろうと、凹凸があるような表面であろうとも
、光が照射された表面部分のみが改質されるため、非照
射体の形状は問わない方法である。Furthermore, the method of the present invention can be applied even if the non-irradiated object is in the form of a thin film.
This method does not care about the shape of the non-irradiated object, since only the surface portion irradiated with light is modified, whether it is a thick film or an uneven surface.
このように、真空紫外光照射によって高分子表面上に、
物理的、化学的に安定した加工を行なうことができる。In this way, on the polymer surface by vacuum ultraviolet light irradiation,
Physically and chemically stable processing can be performed.
Claims (1)
照射することを特徴とする高分子成形品表面の改質方法
。 ２、前記真空紫外光の光源が希ガス放電プラズマ光源で
ある請求項１記載の方法。[Scope of Claims] 1. A method for modifying the surface of a polymer molded article, which comprises irradiating the polymer molded article with vacuum ultraviolet light having a wavelength of 190 nm or less. 2. The method according to claim 1, wherein the vacuum ultraviolet light source is a rare gas discharge plasma light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2059445A JPH0655846B2 (en) | 1990-03-09 | 1990-03-09 | Etching method for polymer moldings |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2059445A JPH0655846B2 (en) | 1990-03-09 | 1990-03-09 | Etching method for polymer moldings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03259932A true JPH03259932A (en) | 1991-11-20 |
| JPH0655846B2 JPH0655846B2 (en) | 1994-07-27 |
Family
ID=13113497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2059445A Expired - Lifetime JPH0655846B2 (en) | 1990-03-09 | 1990-03-09 | Etching method for polymer moldings |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0655846B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04318037A (en) * | 1990-12-27 | 1992-11-09 | Abb Patent Gmbh | Method of surface treatment |
| EP0673751A2 (en) * | 1994-03-11 | 1995-09-27 | Sumitomo Electric Industries, Ltd. | Process for modifying surface of fluororesin product |
| JPH0959404A (en) * | 1995-08-28 | 1997-03-04 | Internatl Business Mach Corp <Ibm> | Modifying method for photosensitive chemical substance film |
| JP2000273226A (en) * | 1999-03-24 | 2000-10-03 | Matsushita Electric Works Ltd | Formation of metal film on resin substrate surface |
| JP2007070427A (en) * | 2005-09-06 | 2007-03-22 | Institute Of Physical & Chemical Research | Method for etching ultraviolet light-transmitting polymer material |
| US20110159442A1 (en) * | 2009-12-31 | 2011-06-30 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59223731A (en) * | 1983-06-02 | 1984-12-15 | Susumu Kumagai | Formation of thin metallic film on surface of synthetic resin molding and product obtained thereby |
| JPS607936A (en) * | 1983-06-24 | 1985-01-16 | Anelva Corp | Photochemical surface treatment device |
| JPH03128947A (en) * | 1989-10-14 | 1991-05-31 | I S I:Kk | Surface modification of material |
-
1990
- 1990-03-09 JP JP2059445A patent/JPH0655846B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59223731A (en) * | 1983-06-02 | 1984-12-15 | Susumu Kumagai | Formation of thin metallic film on surface of synthetic resin molding and product obtained thereby |
| JPS607936A (en) * | 1983-06-24 | 1985-01-16 | Anelva Corp | Photochemical surface treatment device |
| JPH03128947A (en) * | 1989-10-14 | 1991-05-31 | I S I:Kk | Surface modification of material |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04318037A (en) * | 1990-12-27 | 1992-11-09 | Abb Patent Gmbh | Method of surface treatment |
| EP0673751A2 (en) * | 1994-03-11 | 1995-09-27 | Sumitomo Electric Industries, Ltd. | Process for modifying surface of fluororesin product |
| US5555549A (en) * | 1994-03-11 | 1996-09-10 | Sumitomo Electric Industries, Ltd. | Process for modifying a surface of a fluororesin product |
| EP0673751A3 (en) * | 1994-03-11 | 1997-07-23 | Sumitomo Electric Industries | Process for modifying surface of fluororesin product. |
| JPH0959404A (en) * | 1995-08-28 | 1997-03-04 | Internatl Business Mach Corp <Ibm> | Modifying method for photosensitive chemical substance film |
| JP2000273226A (en) * | 1999-03-24 | 2000-10-03 | Matsushita Electric Works Ltd | Formation of metal film on resin substrate surface |
| JP2007070427A (en) * | 2005-09-06 | 2007-03-22 | Institute Of Physical & Chemical Research | Method for etching ultraviolet light-transmitting polymer material |
| US20110159442A1 (en) * | 2009-12-31 | 2011-06-30 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device |
| US8318412B2 (en) * | 2009-12-31 | 2012-11-27 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0655846B2 (en) | 1994-07-27 |
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