JPH03259571A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPH03259571A JPH03259571A JP2058492A JP5849290A JPH03259571A JP H03259571 A JPH03259571 A JP H03259571A JP 2058492 A JP2058492 A JP 2058492A JP 5849290 A JP5849290 A JP 5849290A JP H03259571 A JPH03259571 A JP H03259571A
- Authority
- JP
- Japan
- Prior art keywords
- signal processing
- photodetecting
- semiconductor chip
- photodetector
- processing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000003672 processing method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000951 Aluminide Inorganic materials 0.000 description 1
- 101150006573 PAN1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
【発明の詳細な説明】
〔概 要〕
表面入射型光検知装置に関し、
光検知素子と信号処理素子との接続が容易な光検知装置
を目的とし、
表面に配線パターンを有する絶縁性基板上に、光検知素
子を形成した半導体チップと、該光検知素子の信号を処
理する信号処理素子を形成した半導体チップとを並べて
設置し、前記絶縁性基板の前記光検知素子に対応する位
置に透光窓を設けるとともに、前記両半導体チップと前
記配線パターンとを金属ハンプにてそれぞれ接続したこ
とで構成する。[Detailed Description of the Invention] [Summary] Regarding a front-illuminated photodetection device, the objective is to provide a photodetection device in which a photodetection element and a signal processing element can be easily connected, and an insulating substrate having a wiring pattern on the surface. , a semiconductor chip on which a photodetecting element is formed and a semiconductor chip on which a signal processing element for processing a signal from the photodetecting element is formed are placed side by side, and a light-transmitting plate is placed on the insulating substrate at a position corresponding to the photodetecting element. It is constructed by providing a window and connecting both the semiconductor chips and the wiring pattern with metal humps.
本発明は表面入射型の光検知装置に関する。 The present invention relates to a front-illuminated photodetector.
光検知装置は光を検知して、信号処理を行う回路で、光
検知部、駆動部、および信号処理部から構成されている
。A photodetecting device is a circuit that detects light and performs signal processing, and is composed of a photodetecting section, a driving section, and a signal processing section.
従来、このような表面入射型の光検知装置として第３図
に示すように、サファイアのような絶縁性基板１上に、
赤外線検知素子のような光検知素子を形成したインジウ
ムアンチモン（ＩｎＳｂ）より成る半導体チップ２と、
該検知素子の信号を処理する電荷転送素子のような信号
処理素子を形成したシリコン（Ｓｉ）より成る半導体チ
ップ３とを金錫合金等を用いて固着する。Conventionally, as shown in FIG. 3, such a front-illuminated photodetector is made of an insulating substrate 1 such as sapphire.
A semiconductor chip 2 made of indium antimony (InSb) on which a photodetection element such as an infrared detection element is formed;
A semiconductor chip 3 made of silicon (Si) on which a signal processing element such as a charge transfer element for processing the signal of the detection element is formed is fixed using a gold-tin alloy or the like.
次いで前記検知素子の電極４と、信号処理素子の人力ダ
イオードの電極５とを金ｖＡ６を用いてワイヤボンディ
ング接続している。Next, the electrode 4 of the detection element and the electrode 5 of the human-powered diode of the signal processing element are connected by wire bonding using gold vA6.
そして光検知素子を形成したＩｎＳｂの半導体チップ２
の表面より赤外線を入射して検知し、この検知信号を、
Ｓｉよりなる半導体チップ３に形成した信号処理素子に
て信号処理している。And an InSb semiconductor chip 2 on which a photodetecting element is formed.
Detects infrared rays incident on the surface of the
Signal processing is performed by a signal processing element formed on a semiconductor chip 3 made of Si.
〔発明が解決しようとする課題］
然し、上記した従来の光検知装置は、金線６を用いたワ
イヤボンディングにより光検知素子と信号処理素子とを
結合しており、ワイヤポンディングの作業が煩雑で該装
置の製造工数が大となる難点がある。[Problems to be Solved by the Invention] However, in the conventional photodetecting device described above, the photodetecting element and the signal processing element are connected by wire bonding using gold wire 6, and the wire bonding work is complicated. However, there is a drawback that the number of man-hours required to manufacture the device is large.
本発明は上記した欠点を除去し、ワイヤボンディングの
ような煩雑な方法を用いずに製造が容易な表面入射型の
光検知装置の提供を目的とする。An object of the present invention is to eliminate the above-mentioned drawbacks and provide a front-illuminated photodetecting device that is easy to manufacture without using complicated methods such as wire bonding.
上記目的を達成する本発明の光検知装置は、表面に配線
パターンを有する絶縁性基板上に、光検知素子を形成し
た半導体チップと、
該光検知素子の信号を処理する信号処理素子を形成した
半導体チップとを並べて設置し、前記絶縁性基板の前記
光検知素子に対応する位置に透光窓を設けるとともに、
前記両手導体チップと前記配線パターンとを金属バンプ
にてそれぞれ接続したことを特徴としている。A photodetection device of the present invention that achieves the above object includes a semiconductor chip on which a photodetection element is formed, and a signal processing element that processes a signal from the photodetection element, on an insulating substrate having a wiring pattern on the surface. and semiconductor chips are placed side by side, and a light-transmitting window is provided at a position corresponding to the photodetecting element of the insulating substrate, and
The device is characterized in that the two-handed conductor chip and the wiring pattern are connected to each other by metal bumps.
本発明の光検知装置は、光検知素子と信号処理素子とを
実装し、中央に透光窓を有し、絶縁膜にて被覆された配
線パターンを有する絶縁性基板を用意する。また該絶縁
膜のコンタクトホールより露出し、前記配線パターンと
接続する金属バンプを設ける。そしてこの透光窓上に光
検知素子を設置するとともに、該配線パターン上に信号
処理素子を設置する。The photodetecting device of the present invention includes an insulating substrate on which a photodetecting element and a signal processing element are mounted, a light-transmitting window in the center, and a wiring pattern covered with an insulating film. Further, a metal bump is provided which is exposed through the contact hole of the insulating film and connected to the wiring pattern. Then, a photodetecting element is installed on the light-transmitting window, and a signal processing element is installed on the wiring pattern.
そして前記透光窓上に光検知素子を形成した半導体チッ
プ、および配線パターン上に信号処理素子を形成した半
導体チップを設置し、前記配線パターンに接続する金属
バンプと光検知素子に設けた金属ハンプ、および信号処
理素子に設けた金属バンプ同志を圧着接続する。Then, a semiconductor chip with a photodetecting element formed on the transparent window and a semiconductor chip with a signal processing element formed on the wiring pattern are installed, and metal bumps connected to the wiring pattern and a metal hump provided on the photodetecting element are installed. , and the metal bumps provided on the signal processing element are crimped and connected to each other.
このようにすると、表面入射型の光検知装置がワイヤボ
ンディング接続のような煩雑な方法を用いずに容易に形
成できる。In this way, a front-illuminated photodetector can be easily formed without using a complicated method such as wire bonding.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の光検知装置の構造を示す断面図である
。FIG. 1 is a sectional view showing the structure of a photodetecting device according to the present invention.
図示するようにＩｎＳｂのような半導体チップ１１に形
成した光検知素子と、Ｓｔのような半導体チップ１２に
形成した信号処理素子とを接続するための配線パターン
１３を有する例えばサファイアのような絶縁性基板１４
の中央に開口部を設け、透光窓１５とする。この配線パ
ターン１３はＳｉ０ｇ膜のような絶縁膜１６にて被覆さ
れている。As shown in the figure, an insulating material such as sapphire has a wiring pattern 13 for connecting a photodetecting element formed on a semiconductor chip 11 such as InSb and a signal processing element formed on a semiconductor chip 12 such as St. Substrate 14
An opening is provided in the center to serve as a light-transmitting window 15. This wiring pattern 13 is covered with an insulating film 16 such as a SiOg film.
この透光窓１５上に光検知素子を形成した半導体チップ
１１を設置するとともに、絶縁膜１６にて被覆された配
線パターン１３上に信号処理素子を形成した半導体チッ
プ１２を設置する。そして絶縁膜１６に設けたコンタク
トホール１８より露出し、かつ配線パターン１３に接続
する金属パン１１７Ａ、 １７Ｂ、 １７Ｃを設け、こ
の金属パン１１７Ａと光検知素子に設けた金属パン１１
９Ａ 、金属パン１１７Ｂと信号処理素子に設けた金属
パン１１９Ｂとを、それぞれ圧着接合する。A semiconductor chip 11 on which a photodetecting element is formed is placed on the transparent window 15, and a semiconductor chip 12 on which a signal processing element is formed is placed on the wiring pattern 13 covered with an insulating film 16. Then, metal pans 117A, 17B, and 17C are provided which are exposed through the contact hole 18 provided in the insulating film 16 and connected to the wiring pattern 13, and the metal pans 117A and the metal pan 11 provided on the photodetecting element are connected to each other.
9A, the metal pan 117B and the metal pan 119B provided on the signal processing element are bonded and bonded.
このようにした光検知装置に於ける透光窓１５より矢印
のように光を入射すると、表面入射型の光検知装置が煩
雑なワイヤボンディングの作業に依らずに簡単な方法で
形成できる。When light is incident on the light-transmitting window 15 in the light-transmitting window 15 in the direction shown by the arrow in the photo-detecting device, a front-illuminated photo-detecting device can be formed by a simple method without relying on complicated wire bonding work.
このような本発明の光検知装置の製造方法について第２
図（ａ）より第２図（ａｌ迄の断面図、および平面図を
用いて説明する。The second method for manufacturing the photodetecting device of the present invention is as follows.
This will be explained using a cross-sectional view and a plan view from FIG. 2(a) to FIG. 2(al).
第２図（ａｌに示すように、前記第１図に於いて示した
光検知素子を形成したＩｎＳｂの半導体チップ１１、お
よび信号処理素子を形成したＳｔの半導体チップ１２の
熱膨張係数の値に接近した熱膨張係数を有し、かつ厚さ
が３００〜５００μ顛のサファイア基板、或いはアルミ
ナイドライド（Ａ／Ｎ）の絶縁性基板１４を用意する。As shown in FIG. 2 (al), the values of the thermal expansion coefficients of the InSb semiconductor chip 11 on which the photodetecting element shown in FIG. 1 was formed and the St semiconductor chip 12 on which the signal processing element was formed An insulating substrate 14 of sapphire substrate or aluminide (A/N) having a similar coefficient of thermal expansion and a thickness of 300 to 500 μm is prepared.
次いでこの絶縁性基板１４上にＡＩ！を１μｍの厚さに
スパッタ法で被着した後、ホトリソグラフィ法を用いて
所定の配線パターン１３に形成する。Next, AI! is placed on this insulating substrate 14. is deposited to a thickness of 1 μm by sputtering, and then formed into a predetermined wiring pattern 13 using photolithography.
次いで第２図（ｂｌに示すように、上記絶縁性基板上に
ＣＶＤ法等によって５ｉＯｚ膜、或いは窒化Ｓｉ膜より
なる絶縁Ｍ１６を１．５μ−の厚さに被着形成する。Next, as shown in FIG. 2 (bl), an insulating layer M16 made of a 5iOz film or a Si nitride film is deposited to a thickness of 1.5 .mu.m on the insulating substrate by CVD or the like.
次いで第２図ｆｃ）に示すように、前記絶縁膜１６の金
属バンプ形成位置に対応した領域にコンタクトホール１
８をホトリソグラフィ法を用いたエツチングにより形成
する。Next, as shown in FIG.
8 is formed by etching using photolithography.
次いでコンタクトホール１８を形成した箇所に半田メツ
キにより半田の金属ハンプ１７Ａ、 １７Ｂ、 １７Ｃ
を１０μ−の高さになるように形成する。Next, solder metal humps 17A, 17B, 17C are soldered to the locations where the contact holes 18 have been formed by soldering.
is formed to have a height of 10μ.
図で金属バンプ１７Ａは第１図に示すように光検知素子
電極上に設けた金属ハンプ１９Ａと接続し、金属ハンプ
１７Ｂは信号処理素子電極上に設けた金属ハンプ１９Ｂ
と接続し、金属ハンプ１７Ｃは外部回路へ引き出すため
に形成されている。In the figure, the metal bump 17A is connected to the metal hump 19A provided on the photodetector element electrode as shown in FIG. 1, and the metal bump 17B is connected to the metal hump 19B provided on the signal processing element electrode.
A metal hump 17C is formed to connect to an external circuit.
次いで第２図（ｄ）に示すように、上記絶縁性基板１４
をホトレジスト膜のような感光性樹脂、或いは高分子樹
脂によって被覆し、該基板の光が入射する領域に、超音
波加工法、サンドブラスト加工法のような機械的加工方
法により透光窓１５を形成する。Next, as shown in FIG. 2(d), the insulating substrate 14 is
is coated with a photosensitive resin such as a photoresist film or a polymer resin, and a transparent window 15 is formed in the region of the substrate where light enters by a mechanical processing method such as an ultrasonic processing method or a sandblasting method. do.
なお、この絶縁性基板が検知波長を充分透過する材料で
あれば、孔開けの必要は無い。Note that if this insulating substrate is made of a material that sufficiently transmits the detection wavelength, there is no need to make holes.
次いで上記絶縁性基板を被覆した樹脂を除去して第２図
（ｅ）に示すような絶縁性基板を形成する。Next, the resin covering the insulating substrate is removed to form an insulating substrate as shown in FIG. 2(e).
次いで前記第１図に示したＩｎＳｂの半導体チップ１１
に形成した光検知素子の電極上に形成された金属パン１
１９Ａと絶縁性基板に形成された金属バンプ１７Ａ と
を、またＳｉの半導体チップ１２に形成した信号処理素
子の電極の金属バンプ１９Ｂと絶縁性基板に形成した金
属バンプ１７Ｂとを合致させて圧着して接合することで
光検知装置を形成する。Next, the InSb semiconductor chip 11 shown in FIG.
Metal pan 1 formed on the electrode of the photodetecting element formed in
19A and the metal bump 17A formed on the insulating substrate, and also the metal bump 19B of the electrode of the signal processing element formed on the Si semiconductor chip 12 and the metal bump 17B formed on the insulating substrate are matched and crimped. A photodetecting device is formed by bonding them together.
以上の説明から明らかなように本発明の光検知装置によ
れば、実装基板である絶縁性基板の開口部によって光検
知素子に赤外線が表面入射でき、上記絶縁性基板に設け
た金属バンプにより、煩雑なワイヤポンディング作業を
しなくとも信号処理素子と光検知素子が接続できる。As is clear from the above description, according to the photodetecting device of the present invention, infrared rays can be incident on the surface of the photodetecting element through the opening of the insulating substrate, which is the mounting substrate, and the metal bumps provided on the insulating substrate can Signal processing elements and light detection elements can be connected without complicated wire bonding work.
また上記絶縁性基板は薄板であり、半導体ウェハと同し
ような加工方法で一括して大量に加工でき、製造工数の
低下が図れる。Further, the insulating substrate is a thin plate, and can be processed in large quantities at once using a processing method similar to that of semiconductor wafers, thereby reducing the number of manufacturing steps.
くできる効果を有している。It has the effect of reducing
第１図は本発明の光検知装置の構造を示す断面図、
第２図（ａ）より第２図ｆｅｌ迄は、本発明の光検知装
置の製造方法を示す断面図および平面図、第３図は従来
の光検知装置を示す断面図である。
図において、
１１は半導体チップ（ＩｎＳｂ） 、１２は半導体チッ
プ（Ｓｉ）、１３は配線パターン、１４は絶縁性基板、
１５は透光窓、１６は絶縁膜、１７Ａ、 １７Ｂ、 １
７Ｃ，１９Ａ、 １９Ｂは金属バンプ、１８はコンタク
トホールを示す。
〔発明の効果〕
以上述べたように本発明の光検知装置は、表面入射型の
光検知素子とその信号処理回路素子との接続がワイヤボ
ンディングのような煩雑な工程を用いずに容易に形成で
きるので、製造工数を小さ第
１
ＩＣ）
不裏明社社畑家１＾髪渣’Ｘ３±を釘耐圃ｂ・稀淳（＋
ＮＩ）第
図FIG. 1 is a sectional view showing the structure of the photodetecting device of the present invention, FIG. 2(a) to FIG. The figure is a sectional view showing a conventional photodetector. In the figure, 11 is a semiconductor chip (InSb), 12 is a semiconductor chip (Si), 13 is a wiring pattern, 14 is an insulating substrate,
15 is a transparent window, 16 is an insulating film, 17A, 17B, 1
7C, 19A, and 19B are metal bumps, and 18 is a contact hole. [Effects of the Invention] As described above, in the photodetecting device of the present invention, the connection between the front-illuminated photodetecting element and its signal processing circuit element can be easily formed without using a complicated process such as wire bonding. Because it can be done, the manufacturing man-hours can be reduced (1st IC) Fuuraimeisha Shabata family 1＾Kamiagatsu'
NI) Figure
Claims (1)
４）上に、 光検知素子を形成した半導体チップ（１１）と、該光検
知素子の信号を処理する信号処理素子を形成した半導体
チップ（１２）とを並べて設置し、前記絶縁性基板（１
４）の前記光検知素子に対応する位置に透光窓（１５）
を設けるとともに、前記両半導体チップ（１１、１２）
と前記配線パターン（１３）とを金属バンプ（１７、１
９）にてそれぞれ接続して成ることを特徴とする光検知
装置。[Claims] An insulating substrate (1) having a wiring pattern (13) on its surface.
4) A semiconductor chip (11) on which a photodetecting element is formed and a semiconductor chip (12) on which a signal processing element for processing a signal from the photodetecting element is formed are placed side by side, and the insulating substrate (1) is placed side by side.
A light-transmitting window (15) is provided at a position corresponding to the photodetecting element of 4).
and both semiconductor chips (11, 12).
and the wiring pattern (13) with metal bumps (17, 1
9) A photodetecting device characterized by being connected to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058492A JPH03259571A (en) | 1990-03-08 | 1990-03-08 | Photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058492A JPH03259571A (en) | 1990-03-08 | 1990-03-08 | Photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03259571A true JPH03259571A (en) | 1991-11-19 |
Family
ID=13085924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2058492A Pending JPH03259571A (en) | 1990-03-08 | 1990-03-08 | Photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03259571A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58128762A (en) * | 1982-01-27 | 1983-08-01 | Fujitsu Ltd | Semiconductor device |
| JPH01205558A (en) * | 1988-02-12 | 1989-08-17 | Nec Corp | Hybrid integrated circuit |
| JPH01220853A (en) * | 1988-02-29 | 1989-09-04 | Nec Corp | Hybrid integrated circuit |
-
1990
- 1990-03-08 JP JP2058492A patent/JPH03259571A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58128762A (en) * | 1982-01-27 | 1983-08-01 | Fujitsu Ltd | Semiconductor device |
| JPH01205558A (en) * | 1988-02-12 | 1989-08-17 | Nec Corp | Hybrid integrated circuit |
| JPH01220853A (en) * | 1988-02-29 | 1989-09-04 | Nec Corp | Hybrid integrated circuit |
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