JPH0325952B2 - - Google Patents

Info

Publication number
JPH0325952B2
JPH0325952B2 JP56194293A JP19429381A JPH0325952B2 JP H0325952 B2 JPH0325952 B2 JP H0325952B2 JP 56194293 A JP56194293 A JP 56194293A JP 19429381 A JP19429381 A JP 19429381A JP H0325952 B2 JPH0325952 B2 JP H0325952B2
Authority
JP
Japan
Prior art keywords
layer
atoms
layer region
carbon atoms
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56194293A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5895876A (ja
Inventor
Kyosuke Ogawa
Shigeru Shirai
Junichiro Kanbe
Keishi Saito
Yoichi Oosato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56194293A priority Critical patent/JPS5895876A/ja
Priority to US06/443,164 priority patent/US4460670A/en
Priority to GB08233456A priority patent/GB2111707B/en
Priority to DE3243928A priority patent/DE3243928C2/de
Publication of JPS5895876A publication Critical patent/JPS5895876A/ja
Publication of JPH0325952B2 publication Critical patent/JPH0325952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
JP56194293A 1981-11-26 1981-12-01 光導電部材 Granted JPS5895876A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56194293A JPS5895876A (ja) 1981-12-01 1981-12-01 光導電部材
US06/443,164 US4460670A (en) 1981-11-26 1982-11-19 Photoconductive member with α-Si and C, N or O and dopant
GB08233456A GB2111707B (en) 1981-11-26 1982-11-24 Photoconductive member
DE3243928A DE3243928C2 (de) 1981-11-26 1982-11-26 Fotoleitfähiges Element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194293A JPS5895876A (ja) 1981-12-01 1981-12-01 光導電部材

Publications (2)

Publication Number Publication Date
JPS5895876A JPS5895876A (ja) 1983-06-07
JPH0325952B2 true JPH0325952B2 (enrdf_load_html_response) 1991-04-09

Family

ID=16322178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194293A Granted JPS5895876A (ja) 1981-11-26 1981-12-01 光導電部材

Country Status (1)

Country Link
JP (1) JPS5895876A (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059356A (ja) * 1983-09-12 1985-04-05 Toshiba Corp 光導電部材
JPS6381433A (ja) * 1986-09-26 1988-04-12 Kyocera Corp 電子写真感光体
JPS63151960A (ja) * 1986-12-16 1988-06-24 Kyocera Corp 電子写真感光体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS54145540A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
JPS5944791B2 (ja) * 1979-03-26 1984-11-01 松下電器産業株式会社 半導体素子

Also Published As

Publication number Publication date
JPS5895876A (ja) 1983-06-07

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