JPH03252153A - Holding member for semiconductor wafer - Google Patents
Holding member for semiconductor waferInfo
- Publication number
- JPH03252153A JPH03252153A JP2049878A JP4987890A JPH03252153A JP H03252153 A JPH03252153 A JP H03252153A JP 2049878 A JP2049878 A JP 2049878A JP 4987890 A JP4987890 A JP 4987890A JP H03252153 A JPH03252153 A JP H03252153A
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- adhesive layer
- semiconductor wafer
- holding
- loading frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000012790 adhesive layer Substances 0.000 claims abstract description 52
- 238000011068 loading method Methods 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 19
- 235000012431 wafers Nutrition 0.000 abstract description 40
- 239000010410 layer Substances 0.000 abstract description 15
- 238000005187 foaming Methods 0.000 abstract description 6
- 230000010485 coping Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 31
- 239000000853 adhesive Substances 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 238000005520 cutting process Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 241000951471 Citrus junos Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 235000010575 Pueraria lobata Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- QHZOMAXECYYXGP-UHFFFAOYSA-N ethene;prop-2-enoic acid Chemical compound C=C.OC(=O)C=C QHZOMAXECYYXGP-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 238000010097 foam moulding Methods 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012793 heat-sealing layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 238000011328 necessary treatment Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体ウェハ、ないしその切断素子からなる
半導体チップの保持性と、多段積載移送性に優れる半導
体ウェハの保持部材に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor wafer holding member that is excellent in holding a semiconductor wafer or a semiconductor chip made of a cutting element thereof, and in multi-stage loading and transportation.
発明の背景
回路パターンが形成された半導体ウェハは、必要に応じ
裏面研摩して厚さ調整したのち、ダイシング工程で素子
小片に分断され、形成された半導体チップがマウント工
程におかれて接着剤を介しチップキャリヤに固着された
のち、ボンディング工程等の後続工程に移される。前記
の分断処理に際しては切断屑の除去等のため適度な液圧
(通常2 kg / cd程度)で洗浄することが通例
である。Background of the Invention A semiconductor wafer on which a circuit pattern has been formed is back-polished to adjust the thickness as necessary, and then divided into small element pieces in a dicing process, and the formed semiconductor chips are placed in a mounting process where adhesive is applied. After being fixed to the chip carrier via the intervening chip carrier, it is transferred to a subsequent process such as a bonding process. During the above-mentioned cutting process, it is customary to wash with appropriate hydraulic pressure (usually about 2 kg/cd) to remove cutting debris.
前記において、半導体ウェハの夏型なる大判化に伴い、
クリーンルーム等の必要スペースの大型化などの種々の
問題から、半導体チップを一貫ラインで製造するこれま
でのシステムに代えて、ダイシング工程やマウント工程
等の工程ごとにそれぞれ独立して必要な加工を施す分業
システムへの移行が検討されており、その場合における
半導体ウェハ、ないし半導体チップの新たな移送手段が
求められている。In the above, with the increase in the size of semiconductor wafers,
Due to various issues such as the increased space required for clean rooms, etc., instead of the conventional system where semiconductor chips are manufactured in an integrated line, the necessary processing is performed independently for each process such as the dicing process and mounting process. A transition to a division of labor system is being considered, and in that case, a new means of transporting semiconductor wafers or semiconductor chips is required.
従来の技術及び課題
従来、回路パターンが形成された半導体ウェハないしそ
れを素子小片に分断してなる半導体チップの移送手段も
兼ねうる保持部材としては、本発明者らが属するグルー
プにより、ニードル貫通性を有する発泡樹脂製の支持プ
レートの上に半導体ウェハを接着保持するための粘着層
を設けたものが提案されている(特開昭61−2376
06号公報)。Prior Art and Problems Conventionally, as a holding member that can also serve as a means for transporting a semiconductor wafer on which a circuit pattern is formed or a semiconductor chip formed by dividing the semiconductor wafer into small element pieces, the group to which the present inventors belong has developed a method that has needle penetrating properties. It has been proposed that an adhesive layer for adhering and holding a semiconductor wafer is provided on a support plate made of foamed resin.
Publication No. 06).
これは半導体ウェハの大判化に伴い、半導体ウェハを接
着保持した粘着フィルムをリングフレームで支持するそ
れまでの方式では、フィルムの伸びや捩れで分断ミスが
発生したり、形成した半導体チップをピックアップする
際に素子間で干渉するなどの問題を生じ、その問題点の
克服を目的としたものである。This is because semiconductor wafers have become larger in size, and with the previous method of supporting an adhesive film with a ring frame that held the semiconductor wafer in place, the film could stretch or twist, resulting in cutting errors, or it would be difficult to pick up the formed semiconductor chips. This is intended to overcome problems such as interference between elements.
そのため、上記した分業システムを実現すべく保持部材
で固定した半導体ウェハを素子小片に分断後そのまま次
工程へと移送する場合に、例えビンを介し積載運搬を可
能としても、半導体ウェハの更なる大判化等による高重
量化とニードル貫通性が要求される支持プレートの強度
上の制約から積載可能数が少なく、航空機やトラック等
による大量運搬や遠距離移送に実用できない問題点、積
載した際にビン間で上部の保持部材がたわみ、その底面
が半導体ウェハに接触する問題点、更に積載した各保持
部材間に隙間が形成されてその隙間より汚染物質が侵入
するなど、高度な清澄度が要求される半導体チップの移
送具としては不向きな問題点があった。Therefore, in order to realize the division of labor system described above, when a semiconductor wafer fixed with a holding member is divided into small element pieces and then transported to the next process as is, even if it is possible to load and transport the semiconductor wafer through a bin, the semiconductor wafer must be larger in size. Due to the increase in weight caused by carbonization, etc., and the strength constraints of the support plate, which requires needle penetration, the number of items that can be loaded is small, making it impractical for large-scale transportation or long-distance transportation by aircraft or trucks. A high degree of clarity is required, as the upper holding member bends between the stacks and the bottom surface comes into contact with the semiconductor wafer, and gaps are formed between the stacked holding members, allowing contaminants to enter through these gaps. There were problems that made it unsuitable as a device for transporting semiconductor chips.
課題を解決するための手段
本発明は、断面凹形態の保持部材とすることにより前記
の課題を克服したものである。Means for Solving the Problems The present invention overcomes the above problems by providing a holding member with a concave cross section.
すなわち本発明は、ニードル貫通性を有する発泡樹脂製
の支持プレートの外周縁に丈高の積載フレームを有する
断面凹形態の保持シャーレにおける前記支持プレートに
、回路パターンが形成された半導体ウェハを素子小片に
分断する際に接着保持するための粘着層を有することを
特徴とする半導体ウェハの保持部材を提供するものであ
る。That is, the present invention provides a holding petri dish with a concave cross section and a supporting plate made of foamed resin having needle penetrability and having a tall loading frame on the outer periphery of the supporting plate. The present invention provides a semiconductor wafer holding member characterized by having an adhesive layer for adhering and holding the semiconductor wafer when it is divided into pieces.
作用
支持プレートの外周縁に積載フレームを設けて断面凹形
態の保持シャーレとすることにより、発泡樹脂製の支持
プレートにおけるニードル貫通性を満足させつつ、外周
縁に設けた丈高の積載フレームによる補強効果により伸
びや捩れ等の変形に対する耐性を向上させることができ
、その剛性、ないし強度の向上に基づいて半導体ウェハ
の更なる大判化による高重量化に応じてウェハ分断時に
おける捩れ防止や、ピックアップ時における素子小片間
の干渉防止に対処できると共に、積載の多段化による効
率移送や、各保持部材間における隙間形成の防止を達成
できる。更に、軽量性、吸弓性なども満足させることが
できる。By providing a loading frame on the outer periphery of the support plate to create a holding petri dish with a concave cross-section, the needle penetration of the foamed resin support plate is satisfied, while the tall loading frame provided on the outer periphery provides reinforcement. As a result, resistance to deformation such as elongation and twisting can be improved, and based on the improved rigidity or strength, it is possible to prevent twisting when cutting wafers and to prevent pickup as semiconductor wafers become heavier due to larger sizes. In addition, it is possible to prevent interference between small element pieces when loading the elements, and to achieve efficient transfer by stacking the elements in multiple stages, as well as to prevent the formation of gaps between the holding members. Furthermore, it is possible to satisfy requirements such as light weight and bow absorption properties.
実施例 添付図面に本発明の保持部材の種々の形態を例示した。Example Various embodiments of the holding member of the present invention are illustrated in the accompanying drawings.
1が断面凹形態の保持シャーレ、6が粘着層である。な
お7は粘着層に接着保持された回路パターン形成済みの
半導体ウェハ、葛はその半導体ウェハを素子小片に分断
してなる半導体チップ、9はその分断ラインである。1 is a holding petri dish with a concave cross section, and 6 is an adhesive layer. Note that 7 is a semiconductor wafer with a circuit pattern formed thereon that is adhered and held by an adhesive layer, kuzu is a semiconductor chip formed by dividing the semiconductor wafer into small element pieces, and 9 is a dividing line.
第1図において保持シャーレ1は、発泡性樹脂を用いて
支持プレート11と積載フレーム21とを一体的に発泡
モールド成形してなる。第2図に例示の保持シャーレ1
は、必要に応じて付加される補強枠4を前記した支持プ
レート11の底部外周に形成した溝部に接着付加すると
共に、支持プレート11の底面にスキン層5を設けたも
のである。スキン層は、屑の発生防止や、通気性をなく
して減圧吸引性を高めることなどを目的に、必要に応じ
て保持シャーレの全面や上面、底面等の必要部分に設け
られるものである。スキン層の形成は例えば、フィルム
の接着や塗工膜を形成する方式、樹脂発泡層の表面を熱
溶融させる方式などにより行うことができる。なお保持
シャーレ、ないし支持プレートが独立気泡構造の発泡体
からなるときには、前記スキン層が不要な場合が多い。In FIG. 1, the holding petri dish 1 is formed by integrally forming a support plate 11 and a loading frame 21 by foam molding using a foamable resin. Holding petri dish 1 illustrated in Fig. 2
In this embodiment, a reinforcing frame 4, which is added as required, is adhesively added to a groove formed on the outer periphery of the bottom of the support plate 11, and a skin layer 5 is provided on the bottom surface of the support plate 11. The skin layer is provided on necessary parts such as the entire surface, top surface, and bottom surface of the holding petri dish as necessary for the purpose of preventing the generation of debris and improving vacuum suction performance by eliminating air permeability. The skin layer can be formed, for example, by adhering a film, forming a coating, or thermally melting the surface of a foamed resin layer. Note that when the holding petri dish or the support plate is made of a foam having a closed cell structure, the skin layer is often unnecessary.
また前記実施例の保持シャーレには、必要に応じて設け
られる排水孔3が所定の間隔で形成されている。排水孔
は、半導体ウェハを分断する際の洗浄液を切断屑と共に
排出することなどを目的とするものである。隙間を有す
る形態の積載フレームとして排水孔に代えることもでき
る。Further, in the holding petri dish of the above embodiment, drainage holes 3 are formed at predetermined intervals, if necessary. The purpose of the drain hole is to drain cleaning fluid together with cutting waste when cutting a semiconductor wafer. A loading frame having a gap may be used instead of a drainage hole.
第3図に例示の保持シャーレ1は、積載フレーム22が
凸条23とそれに嵌合する溝24を有する構造となって
いる。かかる凸条23と溝24は保持部材を多段に積載
した場合におけるズレや積み崩れの発生の防止を目的と
するもので、不連続な突起とそれに対応する溝を2個以
上設ける方式%式%
第4図、第5図に例示の保持シャーレ1は、支持プレー
ト12,13と非発泡構造の積載フレーム25.26を
接着したもので剛性ないし強度の向上を目的としたもの
である。支持プレートと積載フレームはその材質が興な
っていてもよく、また支持プレートよりも発泡倍率を低
くするなどして相対的に高強度の積載フレームとしても
よい。The holding petri dish 1 illustrated in FIG. 3 has a structure in which a loading frame 22 has a protrusion 23 and a groove 24 that fits therein. The purpose of these protrusions 23 and grooves 24 is to prevent misalignment and collapse of the stack when holding members are stacked in multiple stages. The holding petri dish 1 illustrated in FIGS. 4 and 5 is made by bonding support plates 12, 13 and non-foamed loading frames 25, 26, and is intended to improve rigidity or strength. The support plate and the loading frame may be made of different materials, and the loading frame may have relatively high strength by making the foaming ratio lower than that of the support plate.
上記の如く、本発明における保持シャーレ1は支持プレ
ートと、その外周縁に設けた積載フレームからなる断面
凹形態のものであり、要求される機能や性能等に応じ例
示手段等を組合せるなどして適宜な構造とされる。As mentioned above, the holding petri dish 1 according to the present invention has a concave cross section and consists of a support plate and a loading frame provided on the outer periphery of the support plate. An appropriate structure is provided.
保持シャーレにおける支持プレートは、発泡樹脂で形成
され、かつ形成した半導体チップをピックアップするた
めのニードルが貫通する厚さとされる。一般的な厚さは
1〜5謹である。発泡樹脂としては例えば、発泡スチレ
ン、発泡硬質ポリオレフィン、発泡硬質ウレタン、発泡
硬質ゴムなどがあげられるが、特に限定はない。発泡倍
率は必要な強度等に応じ適宜に決定してよく、例えば約
IO倍程度とすることができる。発泡構造は連続気泡構
造であってもよいし、独立気泡構造であってもよい。The support plate in the holding petri dish is made of foamed resin and has a thickness that allows a needle to pick up the formed semiconductor chip to pass through. Typical thickness is 1 to 5 centimeters. Examples of the foamed resin include foamed styrene, foamed rigid polyolefin, foamed rigid urethane, and foamed rigid rubber, but are not particularly limited. The expansion ratio may be determined as appropriate depending on the required strength, etc., and may be approximately IO times, for example. The foam structure may be an open cell structure or a closed cell structure.
支持プレートの外周縁に設ける積載フレームは断面凹形
態の保持シャーレとすべく、支持プレートよりも高い丈
に形成される。その丈は、少なくとも粘着層に半導体ウ
ェハを接着保持した状態で保持部材を積載した場合に、
支持プレートの裏面が半導体ウェハに接触しない高さと
される・一般的な丈は、支持プレート面よりも約1〜2
m突出した丈である。The loading frame provided on the outer peripheral edge of the support plate is formed to have a higher height than the support plate so as to form a holding petri dish with a concave cross section. The length is at least when the holding member is loaded with the semiconductor wafer bonded and held on the adhesive layer.
The height is set so that the back side of the support plate does not come into contact with the semiconductor wafer. - The general length is about 1 to 2 inches taller than the support plate surface.
It has a protruding length of m.
保持シャーレ、ないし支持プレートには、半導体ウェハ
に形成した回路パターンの保護等のため帯電防止性を付
与してもよい。帯電防止性の付与は、例えばカーボン等
の導電性物質を混入させる方式など、適宜な方式で行っ
てよい。カーボンを混入させる方式は、保持部材の少な
くとも半導体ウェハを接着する面における光反射を抑制
して光反射式センサにより半導体ウエノ1、ないし半導
体チップを検知して分断加工ないしピックアップ作業を
行う際のミスを防止するための着色処理を兼ねさせうる
利点がある。The holding petri dish or the support plate may be provided with antistatic property to protect the circuit pattern formed on the semiconductor wafer. The antistatic properties may be imparted by any appropriate method, such as by mixing a conductive substance such as carbon. The method of mixing carbon suppresses light reflection on at least the surface of the holding member to which the semiconductor wafer is bonded, and detects the semiconductor wafer 1 or semiconductor chip with a light reflection sensor to prevent mistakes when dividing or picking up the semiconductor wafer. It has the advantage that it can also be used as a coloring treatment to prevent this.
本発明の保持部材は、保持シャーレの支持プレートに、
回路パターンが形成された半導体ウエノ\を素子小片に
分断する際に接着保持するための粘着層を設けたもので
ある。粘着層6は、第6図に例示の如(支持プレート1
1における積載フレーム21が突出する側と反対側に設
けてもよい。この場合には、半導体ウェハを素子小片に
分断する際の洗浄液等が溜まり難い利点がある。The holding member of the present invention is attached to the support plate of the holding petri dish.
An adhesive layer is provided for adhering and holding the semiconductor wafer on which a circuit pattern is formed when it is cut into small element pieces. The adhesive layer 6 is attached to the support plate 1 as illustrated in FIG.
It may also be provided on the side opposite to the side from which the loading frame 21 in 1 protrudes. In this case, there is an advantage that the cleaning liquid and the like that are used when cutting the semiconductor wafer into small element pieces are less likely to accumulate.
用いる粘着層については特に限定はない。スクリーン印
刷方式等による塗工層やその紫外線等による硬化層、粘
着フィルムの熱融着層、両面粘着フィルムの接着層など
、適宜な方式で形成された粘着層であってよい。また粘
着層は、第7図に例示した如く、半導体ウエノ1を接着
保持下に素子小片に分断して得た半導体チップ8をチッ
プキャリヤ等にマウントするための接着層61を予め有
する複層構造のものであってもよい。粘着層の厚さは適
宜に決定してよいが、一般には1〜500μ繭とされる
。There are no particular limitations on the adhesive layer used. The adhesive layer may be formed by any appropriate method, such as a coating layer formed by a screen printing method, a layer cured by UV rays, etc., a heat-sealing layer of an adhesive film, or an adhesive layer of a double-sided adhesive film. The adhesive layer has a multi-layer structure in which, as illustrated in FIG. 7, an adhesive layer 61 is preliminarily provided for mounting the semiconductor chip 8 obtained by cutting the semiconductor wafer 1 into small element pieces while adhering and holding it onto a chip carrier or the like. It may be of. The thickness of the adhesive layer may be determined as appropriate, but is generally 1 to 500 μm.
前記の複層構造の粘着層6は例えば、接着力を低下、な
いし喪失させる方式によりマウント用接着層61をベー
スとなる粘着層62より剥離できるようにしてなるもの
などとして得ることができる(特願平1−68939号
、特願平1−119062号)。The adhesive layer 6 having a multilayer structure can be obtained, for example, by reducing or losing the adhesive force so that the mounting adhesive layer 61 can be peeled off from the adhesive layer 62 serving as the base. Application No. 1-68939, Japanese Patent Application No. 1-119062).
その具体例としては、架橋度を増大させて接着力を低下
させるようにした加熱硬化型の感圧接着剤等をベースと
なる粘着層に用いてなる硬化方式のもの、加熱による発
泡処理ないし彫版処理で接着面積を減少させて接着力を
低下させるようにした発泡剤ないし加熱彫版性マイクロ
カプセル含有のベースとなる粘着層を用いてなる発泡方
式ないし加熱彫版方式のもの、加熱処理でマウント用接
着層との界面にブルーミング剤を析出させて接着力を低
下させるようにしてなるブルーミング方式のもの、ベー
スとなる粘着層ないしマウント用接着層の低温化により
接着力を低下させるようにしてなる冷却方式のもの、ベ
ースとなる粘着層とマウント用接着層の間に加熱処理で
変化作用する接着力低減層を介在させてその接着力低減
層の作用により当該界面の接着力を低減させるようにし
てなる方式のもの、前記の方式を適宜に組合せてなる方
式のものなどがあげられる。その場合マウント用接着層
の形成には熱可塑性樹脂や熱硬化性樹脂からなる適宜な
接着剤を用いてよい。その例としてはエチレン・酢酸ビ
ニル共重合体、エチレン・アクリル酸エステル共重合体
、ポリエチレン、ポリプロピレン、ポリアミド、ポリエ
ステル、ポリカーボネート、セルロー、ス誘導体、ポリ
ビニルアセタール、ポリビニルエーテル、ポリウレタン
、フェノキシ樹脂の如き熱可塑性樹脂からなるホットメ
ルト型接着剤、エポキシ樹脂、ポリイミド樹脂、マレイ
ミド樹脂、シリコーン樹脂、フェノール樹脂の如き熱硬
化性樹脂を用いた接着剤、その化アクリル樹脂、ゴム系
ポリマ、フッ素ゴム系ポリマ、フッ素樹脂等からなる接
着剤などがあげられる。熱硬化性樹脂系接着剤によるマ
ウント用接着層はBステージ状態として形成される。マ
ウント用接着層に例えばアルミニウム、銅、銀、金、パ
ラジウム、カーボンの如き導電性物質からなる微粉末を
含有させて導電性を付与してもよい。またアルミナの如
き熱伝導性物質からなる微粉末を含有させて熱伝導性を
高めてもよい。ベースとなる粘着層とマウント用接着層
との接着力が180度ビール値(常温、引張速度300
■/分)に基づき、半導体ウェハの分断時において20
0g/20m以上、形成された半導体チップの剥離時に
おいて150g/20■以下となるよう複層構造化して
なる粘着層が分断時における半導体ウェハの保持力、剥
離時における半導体チップの剥離容易性などの点より好
ましい。複層構造の粘着層におけるベースとなる粘着層
の厚さは1〜100μ腸、就中1〜40μ園が適当であ
り、マウント用接着層の厚さは1〜100μ−が適当で
ある。Specific examples include those that use heat-curing pressure-sensitive adhesives that increase the degree of crosslinking and reduce adhesive strength for the base adhesive layer, and those that use foaming or engraving by heating. A foaming method or a heat engraving method using a base adhesive layer containing foaming agents or heat-engravable microcapsules that reduces the bonding area and lowers adhesive strength through plate processing, and heat-engravable A blooming method in which a blooming agent is precipitated at the interface with the mounting adhesive layer to reduce the adhesive force, and a blooming method in which the adhesive force is reduced by lowering the temperature of the base adhesive layer or mounting adhesive layer. In this cooling method, an adhesive force reducing layer that changes when heated is interposed between the base adhesive layer and the mounting adhesive layer, and the adhesive force at the interface is reduced by the action of the adhesive force reducing layer. For example, the method may be a combination of the above methods, or a combination of the above methods. In that case, an appropriate adhesive made of thermoplastic resin or thermosetting resin may be used to form the mounting adhesive layer. Examples include thermoplastics such as ethylene/vinyl acetate copolymers, ethylene/acrylic acid ester copolymers, polyethylene, polypropylene, polyamides, polyesters, polycarbonates, cellulose, carbonaceous derivatives, polyvinyl acetals, polyvinyl ethers, polyurethanes, and phenoxy resins. Hot-melt adhesives made of resins, adhesives using thermosetting resins such as epoxy resins, polyimide resins, maleimide resins, silicone resins, and phenolic resins, acrylic resins, rubber-based polymers, fluororubber-based polymers, and fluorine resins. Examples include adhesives made of resin or the like. The mounting adhesive layer made of a thermosetting resin adhesive is formed in a B-stage state. The adhesive layer for mounting may contain fine powder of a conductive substance such as aluminum, copper, silver, gold, palladium, or carbon to impart conductivity. Further, fine powder made of a thermally conductive substance such as alumina may be included to improve thermal conductivity. The adhesive strength between the base adhesive layer and the mounting adhesive layer is 180 degrees beer value (normal temperature, tensile speed 300
■/min), when dividing semiconductor wafers, 20
The adhesive layer has a multi-layer structure so that the weight is 0g/20m or more and 150g/20cm or less when the formed semiconductor chip is peeled off, the holding power of the semiconductor wafer when it is separated, the ease of peeling the semiconductor chip when it is peeled off, etc. This is more preferable. The thickness of the base adhesive layer in a multilayer adhesive layer is preferably 1 to 100 μm, particularly 1 to 40 μm, and the thickness of the mounting adhesive layer is preferably 1 to 100 μm.
本発明の保持部材の好ましい使用方法は、その粘着層(
6)に回路パターン形成の半導体ウェハ(7)を接着保
持させたのち、回転丸刃等の適宜な切断手段で素子小片
に分断し、形成された半導体チップ(8)を粘着層(6
)に接着保持させたまま保持部材を多段に積載して次工
程に移送する方式である。A preferred method of using the holding member of the present invention is that its adhesive layer (
After adhering and holding the semiconductor wafer (7) on which a circuit pattern has been formed on the substrate 6), it is cut into small element pieces using a suitable cutting means such as a rotary circular blade, and the formed semiconductor chips (8) are bonded to the adhesive layer (6).
) is a method in which the holding members are stacked in multiple stages while being adhesively held on the holder and transported to the next process.
形成した半導体チップの粘着層よりの取外し、ないし剥
離は、ニードルによる支持プレートの貫通下に半導体チ
ップを突き上げる方法により行うことができる。粘着層
がマウント用接着層を予め有するものである場合には、
例えば粘着層に必要な処理を加えてベースとなる粘着層
とマウント用接着層との剥離が可能な状態としたのち、
個々の半導体チップをニードル等で突き上げて真空チャ
ックによる吸着下にピックアップし、その保持下に真空
チャックを移動させてチップキャリヤにマウントする方
式など、同じ保持手段を介して個々の半導体チップにつ
いて剥離とマウントを一連に行う方法が好ましい。この
場合、形成した半導体チップを散在させることなくマウ
ント工程に供しうる利点などもある。The formed semiconductor chip can be removed or peeled off from the adhesive layer by a method of pushing up the semiconductor chip while penetrating the support plate with a needle. If the adhesive layer already has a mounting adhesive layer,
For example, after applying the necessary treatment to the adhesive layer to make it possible to separate the base adhesive layer from the mounting adhesive layer,
Individual semiconductor chips can be peeled off and removed using the same holding means, such as a method in which the individual semiconductor chips are pushed up with a needle or the like, picked up by a vacuum chuck, and then moved to the vacuum chuck while being held and mounted on a chip carrier. A method of mounting in series is preferred. In this case, there is an advantage that the formed semiconductor chips can be subjected to a mounting process without being scattered.
発明の効果
本発明の保持部材によれば、発泡樹脂製支持プレートを
有する断面凹形態の保持シャーレとしたのでニードル貫
通性、捩れ防止等に基づく大判の半導体ウェハの高精度
な分断性、半導体チップ間の干渉防止性などを満足させ
つつ、半導体ウェハないし半導体チップを接着保持させ
たまま多段にかつ安定に、しかもコンパクトに積載でき
てその軽量性にも優れており、半導体ウェハないし半導
体チップの次工程等への効率的で安全な移送を実現する
ことができる。Effects of the Invention According to the holding member of the present invention, since the holding petri dish has a concave cross section and has a support plate made of foamed resin, high accuracy cutting of large semiconductor wafers and semiconductor chips based on needle penetration, prevention of twisting, etc. While satisfying the interference prevention property between semiconductor wafers or semiconductor chips, it can be stacked stably and compactly in multiple stages while adhesively held, and is also lightweight. Efficient and safe transfer to processes etc. can be realized.
加えて、積載フレーム部分が多段積載による押潰れを防
止すると共に、積重ね間に遮蔽壁を形成して汚染物質の
侵入を防止する。その結果、積重ね体を粘着テープ等に
よる簡単で軽度な結束手段ないし作業で汚染物質の侵入
がない梱包を達成できて、荷造りや荷解きの作業能率に
優れ、荷解き作業時に半導体ウェハないし半導体チップ
を損壊させ難い利点も有している。In addition, the loading frame portion prevents crushing due to multi-stage stacking, and forms a shielding wall between stacks to prevent contaminants from entering. As a result, it is possible to achieve packaging that does not allow contaminants to enter the stack by using simple and light binding methods such as adhesive tape or other operations, and the efficiency of packing and unpacking is excellent. It also has the advantage of being difficult to damage.
さらに、粘着層が予めマウント用接着層を有する場合に
は、半導体ウェハのダイシングから形成チップのマウン
トまでを同じ保持部材による接着保持下に一連に行うこ
とができる。Furthermore, when the adhesive layer has a mounting adhesive layer in advance, the process from dicing the semiconductor wafer to mounting the formed chips can be performed in a series while being adhesively held by the same holding member.
第1図は本発明の保持部材を例示した斜視断面図、第2
図、第3図、第4図、第5図、第6図はそれぞれ他の実
施例の断面図、第7図は粘着層の構成例を示した斜視断
面説明図である。
1:保持シャーレ
11.12.13:支持プレート
21.22.25,26 :積載フレーム6:粘着層
61:マウント用接着層
62:ベースとなる粘着層
7:半導体ウェハ
8:半導体チップFIG. 1 is a perspective sectional view illustrating the holding member of the present invention, and FIG.
3, 4, 5, and 6 are sectional views of other embodiments, respectively, and FIG. 7 is a perspective sectional explanatory view showing an example of the structure of the adhesive layer. 1: Holding petri dish 11.12.13: Support plate 21.22.25, 26: Loading frame 6: Adhesive layer 61: Mounting adhesive layer 62: Base adhesive layer 7: Semiconductor wafer 8: Semiconductor chip
Claims (1)
の外周縁に丈高の積載フレームを有する断面凹形態の保
持シャーレにおける前記支持プレートに、回路パターン
が形成された半導体ウェハを素子小片に分断する際に接
着保持するための粘着層を有することを特徴とする半導
体ウェハの保持部材。 2、粘着層が、ベースとなる粘着層の上にマウント用接
着層を剥離可能に有する複層構造のものからなる請求項
1に記載の保持部材。[Scope of Claims] 1. A semiconductor wafer on which a circuit pattern is formed on the support plate in a holding petri dish with a concave cross section and a tall loading frame on the outer periphery of the support plate made of foamed resin having needle penetrability. 1. A holding member for a semiconductor wafer, comprising an adhesive layer for adhering and holding the semiconductor wafer when dividing the semiconductor wafer into small element pieces. 2. The holding member according to claim 1, wherein the adhesive layer has a multilayer structure having a removable mounting adhesive layer on the adhesive layer serving as a base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2049878A JPH03252153A (en) | 1990-02-28 | 1990-02-28 | Holding member for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2049878A JPH03252153A (en) | 1990-02-28 | 1990-02-28 | Holding member for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03252153A true JPH03252153A (en) | 1991-11-11 |
Family
ID=12843303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2049878A Pending JPH03252153A (en) | 1990-02-28 | 1990-02-28 | Holding member for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03252153A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005015611A3 (en) * | 2003-08-08 | 2005-07-07 | Infineon Technologies Ag | Device for stabilising thin discs |
JP2010287586A (en) * | 2009-06-09 | 2010-12-24 | Shin Etsu Polymer Co Ltd | Method of manufacturing substrate frame |
JP2011137057A (en) * | 2009-12-25 | 2011-07-14 | Nitto Denko Corp | Tape for holding chip, method of holding chip-shaped workpiece, method of manufacturing semiconductor device using tape for holding chip, and method of manufacturing tape for holding chip |
JP2015159220A (en) * | 2014-02-25 | 2015-09-03 | 東洋精密工業株式会社 | Workpiece clamp tray with passage |
-
1990
- 1990-02-28 JP JP2049878A patent/JPH03252153A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005015611A3 (en) * | 2003-08-08 | 2005-07-07 | Infineon Technologies Ag | Device for stabilising thin discs |
JP2010287586A (en) * | 2009-06-09 | 2010-12-24 | Shin Etsu Polymer Co Ltd | Method of manufacturing substrate frame |
JP2011137057A (en) * | 2009-12-25 | 2011-07-14 | Nitto Denko Corp | Tape for holding chip, method of holding chip-shaped workpiece, method of manufacturing semiconductor device using tape for holding chip, and method of manufacturing tape for holding chip |
JP2015159220A (en) * | 2014-02-25 | 2015-09-03 | 東洋精密工業株式会社 | Workpiece clamp tray with passage |
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