JPH03248574A - Manufacture of polysilicon resistor - Google Patents
Manufacture of polysilicon resistorInfo
- Publication number
- JPH03248574A JPH03248574A JP4772590A JP4772590A JPH03248574A JP H03248574 A JPH03248574 A JP H03248574A JP 4772590 A JP4772590 A JP 4772590A JP 4772590 A JP4772590 A JP 4772590A JP H03248574 A JPH03248574 A JP H03248574A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- silicon film
- polysilicon
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 27
- 238000005224 laser annealing Methods 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 13
- 239000007789 gas Substances 0.000 abstract description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 6
- 229910000077 silane Inorganic materials 0.000 abstract description 6
- 150000002431 hydrogen Chemical class 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 abstract description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 241001428214 Polyides Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はポリシリコン抵抗の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method of manufacturing polysilicon resistors.
一般に、特開平１−１９９４７６号公報などで開示され
ているように、ダイヤフラムの膜部に歪抵抗をフルブリ
ッジ接続にて形成し、圧力に応じたダイヤフラムの変形
を歪抵抗の抵抗変化に変換して圧力を検出する半導体圧
力センサなどの電子部品には、ポリシリコン抵抗が用い
られており、このポリシリコン抵抗は次のようにして製
造されている。これは第４図（Ａ）に示すようにプラズ
マＣＶＤ法にて半導体基板１の表面に形成された窒化シ
リコン（ＳｉＮ）、酸化シリコン（Ｓｉ（ｈ）などの絶
縁膜２の表面、またはガラスなどからなる絶縁基板の表
面に、プラズマＣＶＤ法にてアモルファスシリコン膜３
を形成し、次に第４図（Ｂ）に示すようにアモルファス
シリコン膜３の表面にレーザーアニールを施し結晶化さ
せて抵抗層となるポリシリコン膜４を形成し、この後第
４図（Ｃ）に示すようにエツチングにてポリシリコン膜
４のパターニングを施してポリシリコン膜パターンから
なる抵抗層４ａを形成し、次に第４図（Ｄ）に示すよう
に真空蒸着法にてアルミニウム膜５またはアルミニウム
合金膜を蒸着し、かつ第４図（Ｅ）に示すようにエツチ
ングにてアルミニウム膜５のパターニングを施してアル
ミニウム膜パターンからなる電極５ａを形成し、この後
第４図（Ｆ）に示すように電極５ａに出力取出用リード
線に接続される導電ワイヤー６を接続するとともに抵抗
層４ａを覆う保護膜７を形成するものである。そして、
第４図（Ａ）の工程においては一般に炉８内にシランガ
ス（ＳｉＨ４）を導入してプラズマＣＶＤ法にてアモル
ファスシリコン膜３を形成し、第４図（Ｂ）の工程にお
いてはアモルファスシリコン膜３の表面に例えばエキシ
マレーザ−装置９のレーザーを照射してポリシリコン膜
４を形成するようにしている。Generally, as disclosed in Japanese Unexamined Patent Publication No. 1-199476, a strain resistor is formed in the membrane part of a diaphragm by full bridge connection, and the deformation of the diaphragm in response to pressure is converted into a resistance change of the strain resistor. Polysilicon resistors are used in electronic components such as semiconductor pressure sensors that detect pressure, and these polysilicon resistors are manufactured as follows. As shown in FIG. 4(A), this is the surface of an insulating film 2 such as silicon nitride (SiN) or silicon oxide (Si(h)) formed on the surface of a semiconductor substrate 1 by plasma CVD method, or glass, etc. An amorphous silicon film 3 is formed by plasma CVD on the surface of an insulating substrate consisting of
Next, as shown in FIG. 4(B), the surface of the amorphous silicon film 3 is subjected to laser annealing to crystallize it to form a polysilicon film 4 which will become a resistance layer. ), the polysilicon film 4 is patterned by etching to form a resistive layer 4a consisting of a polysilicon film pattern, and then, as shown in FIG. 4(D), an aluminum film 5 is formed by vacuum evaporation. Alternatively, an aluminum alloy film is deposited, and the aluminum film 5 is patterned by etching as shown in FIG. 4(E) to form an electrode 5a consisting of an aluminum film pattern, and then as shown in FIG. As shown, a conductive wire 6 connected to an output lead wire is connected to the electrode 5a, and a protective film 7 is formed to cover the resistance layer 4a. and,
In the step shown in FIG. 4(A), silane gas (SiH4) is generally introduced into the furnace 8 and an amorphous silicon film 3 is formed by plasma CVD, and in the step shown in FIG. 4(B), an amorphous silicon film 3 is formed. The polysilicon film 4 is formed by irradiating the surface with a laser beam from an excimer laser device 9, for example.
上記従来技術においては、シランガス（ＳｉＨａ）を用
いてプラズマＣＶＤ法にてアモルファスシリコン膜３を
形成するものであるため、アモルファスシリコン膜３
（ａ−Ｓｉ：Ｈ）中には水素（Ｈ）が多量に含有され、
このままの状態で第４図（Ｂ）に示すレーザーアニール
を施すと、アモルファスシリコン膜３に含有する水素（
Ｈ）が表出し、ポリシリコン膜４の表面状態が甚だしく
荒れてしまうという問題があり、これを防止するために
通常はレーザーアニールを施す前に４００〜５００℃前
後で数時間の熱処理を施して水素抜きを行っている。In the above conventional technology, since the amorphous silicon film 3 is formed by plasma CVD using silane gas (SiHa), the amorphous silicon film 3 is
(a-Si:H) contains a large amount of hydrogen (H),
When the laser annealing shown in FIG. 4(B) is performed in this state, the hydrogen contained in the amorphous silicon film 3 (
There is a problem that H) is exposed and the surface condition of the polysilicon film 4 becomes extremely rough.To prevent this, heat treatment is usually performed at around 400 to 500°C for several hours before laser annealing. We are removing hydrogen.
しかし、このような熱処理を行うことにより、製造工程
が増えるとともに熱処理時間も長くかかるため量産性が
悪いうえに、基板の材質も４００〜５００℃程度の耐熱
性を有する高価なものに限られ、コスト高になるという
問題があった。However, such heat treatment increases the number of manufacturing steps and takes a long time for heat treatment, making it difficult to mass-produce, and the substrate material is limited to expensive materials that are heat resistant to about 400 to 500 degrees Celsius. There was a problem of high cost.
そこで本発明は水素抜きのための熱処理工程を省略でき
るポリシリコン抵抗の製造方法を提供することを目的と
する。Therefore, an object of the present invention is to provide a method of manufacturing a polysilicon resistor that can omit the heat treatment step for removing hydrogen.
本発明のポリシリコン抵抗の製造方法は、シリコン含有
ガスを用いかつＡｒＦレーザーを光源とした光ＣＶＤ法
にてアモルファスシリコン膜を形成し、このアモルファ
スシリコン膜の表面にレーザーアニールを施して抵抗層
となるポリシリコン膜を形成するものである。The method for manufacturing a polysilicon resistor of the present invention involves forming an amorphous silicon film by a photo-CVD method using a silicon-containing gas and using an ArF laser as a light source, and then laser annealing the surface of this amorphous silicon film to form a resistance layer. A polysilicon film is formed.
また本発明は、ポリシリコン膜を形成するためのレーザ
ーアニールが、真空またはＮ２ガス雰囲気中においてＸ
ｅＣｌレーザーを光源とした光ＣＶＤ法にて施されるも
のである。Further, the present invention provides that laser annealing for forming a polysilicon film is performed in a vacuum or in an N2 gas atmosphere.
This is performed by a photo-CVD method using an eCl laser as a light source.
本発明はＡｒＦ レーザーを光源とした光ＣＶＤ法にて
水素（Ｈ）が含有されないアモルファスシリコン膜（ａ
−Ｓｉ）が形成される。また本発明はＸｅＣｌレーザー
を光源とした光ＣＶＤ法にてポリシリコン膜を形成する
ことによりアモルファスシリコン膜とポリシリコン膜と
を一連の工程で形成することができる。The present invention is an amorphous silicon film (a
-Si) is formed. Further, according to the present invention, an amorphous silicon film and a polysilicon film can be formed in a series of steps by forming a polysilicon film by a photo-CVD method using an XeCl laser as a light source.
以下、本発明の一実施例を添付図面を参照して説明する
。Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.
第１図は本発明の第１実施例を示し、先ず、第１図（Ａ
）に示すようにプラズマＣＶＤ法にて窒化シリコン（Ｓ
ｉＮ）、酸化シリコン（ＳｉＯｚ）などの絶縁膜１１が
表面に形成された半導体基板１２、または絶縁基板（図
示せず）を用意する。FIG. 1 shows a first embodiment of the present invention.
), silicon nitride (S
A semiconductor substrate 12 or an insulating substrate (not shown) having an insulating film 11 formed on the surface thereof, such as silicon oxide (SiOz) or silicon oxide (SiOz), is prepared.
次に、第１図（Ｂ）に示すように絶縁膜１１の表面、ま
たは絶縁基板の表面に、炉１３内にモノシラン（ＳｉＨ
４）またはジシラン（ＳｉＪ、）などのシランガスを導
入し、フッ化アルゴン（ＡｒＦ）を光源とする光ＣＶＤ
法にて水素（Ｈ）を含有しないアモルファスシリコン膜
（ａ−５ｔ） １４を形成する。この場合、基板１２が
配置される炉１３には石英などからなる投光窓１５が設
けられているとともにガス導入口１６および排気口１７
が設けられており、また炉１３内はヒータ１８により２
００℃以下の低温に維持される。１９はエキシマレーザ
−装置、２０はレンズでアル。Next, as shown in FIG. 1(B), monosilane (SiH) is applied to the surface of the insulating film 11 or the surface of the insulating substrate in the furnace 13.
4) Or optical CVD in which silane gas such as disilane (SiJ, ) is introduced and argon fluoride (ArF) is used as a light source.
An amorphous silicon film (a-5t) 14 not containing hydrogen (H) is formed by a method. In this case, the furnace 13 in which the substrate 12 is placed is provided with a light projection window 15 made of quartz or the like, and a gas inlet 16 and an exhaust port 17.
The inside of the furnace 13 is heated by a heater 18.
The temperature is maintained at a low temperature below 00°C. 19 is an excimer laser device, and 20 is a lens.
次に、第１図（Ｃ）に示すようにアモルファスシリコン
膜１４の表面にエキシマレーザ−装置１９などによるレ
ーザーアニールを施し結晶化させて抵抗層となるポリシ
リコン膜２１を形成する。Next, as shown in FIG. 1C, the surface of the amorphous silicon film 14 is subjected to laser annealing using an excimer laser device 19 or the like to crystallize it and form a polysilicon film 21 that will become a resistive layer.
次に、第１図（Ｄ）に示すようにエツチングにてポリシ
リコン膜２１のバターニングを施してポリシリコン膜パ
ターンからなる抵抗層２１ａを形成する。Next, as shown in FIG. 1D, the polysilicon film 21 is patterned by etching to form a resistive layer 21a consisting of a polysilicon film pattern.
次に、第１図（Ｅ）に示すように真空蒸着法にてアルミ
ニウム膜２２またはアルミニウム合金膜を蒸着し、かつ
第１図（Ｆ）に示すようにエツチングにてアルミニウム
膜パターンからなる電極２２ａを形成する。Next, as shown in FIG. 1(E), an aluminum film 22 or an aluminum alloy film is deposited by vacuum evaporation, and as shown in FIG. 1(F), an electrode 22a made of an aluminum film pattern is etched. form.
次に、第１図（Ｇ）に示すように電極２２ａに出力取出
用リード線に接続される導電ワイヤー２３を接続すると
ともに、プラズマＣＶＤ法にて電極２２ａを覆うように
窒化シリコン（ＳｉＮ）などからなる保護膜２４を形成
するものである。Next, as shown in FIG. 1(G), a conductive wire 23 connected to the output lead wire is connected to the electrode 22a, and silicon nitride (SiN) or the like is coated using plasma CVD to cover the electrode 22a. A protective film 24 is formed.
このように本実施例においてはシランガスを用いかつＡ
ｒＦレーザーを光源とした光ＣＶＤ法にて絶縁膜１１の
表面または絶縁基板の表面に水素（Ｈ）が含有されない
アモルファスシリコン膜１４を形成するものであるため
、この後水素抜きのための熱処理を行うことなくレーザ
ーアニールを施してもポリシリコン膜２１の表面が荒れ
ることがなく、また水素抜きのための熱処理工程を省略
できることにより量産性を向上できるとともに、基板の
材質も高価な耐熱性材料に限られることな（安価な材料
を適宜選択して使用することができ、ポリイシドなどの
高分子材料を基板として用いることも可能になる。In this way, in this example, silane gas is used and A
Since the amorphous silicon film 14 containing no hydrogen (H) is formed on the surface of the insulating film 11 or the surface of the insulating substrate by a photo-CVD method using an rF laser as a light source, heat treatment for removing hydrogen is performed after this. The surface of the polysilicon film 21 will not become rough even if laser annealing is performed without annealing, and mass production can be improved by omitting the heat treatment process for removing hydrogen, and the material of the substrate can be made from an expensive heat-resistant material. It is possible to select and use an inexpensive material as appropriate, and it is also possible to use a polymeric material such as polyide as the substrate.
第２図は本発明の第２実施例を示し、第１実施例と同一
部分に同一符号を付し同一箇所の説明を省略して説明す
ると、この実施例においては第１実施例と第１図（Ａ）
、 （Ｂ）、 （Ｄ）〜（Ｇ）の工程は同一であるが、
第１図（Ｃ）の工程が相違している。FIG. 2 shows a second embodiment of the present invention. The same parts as in the first embodiment are given the same reference numerals, and explanations of the same parts are omitted. Diagram (A)
, (B), (D) to (G) are the same steps,
The process shown in FIG. 1(C) is different.
そして、第１図（Ｃ）の工程は第２図に示すように第１
図（Ｂ）と同じ装置を用い、第１図（Ｂ）の工程後炉１
３内のシランガスを真空脱気して真空雰囲気状態にする
か、あるいはチッソガス（Ｎ２）を導入したＮ２雰囲気
状態とし、この雰囲気中において塩化キセノン（ＸｅＣ
ｌ）レーザーを光源とした光ＣＶＤ法にてレーザーアニ
ールを施してポリシリコン膜３を形成したものであり、
これによって、第１実施例と同様に水素抜きのための熱
処理を省略できることに加えて、基板■２を炉１３内に
配置したままアモルファスシリコン膜１４とポリシリコ
ン膜２１を続けて形成でき能率の向上を図ることができ
る。Then, the process in FIG. 1(C) is performed in the first step as shown in FIG.
Using the same equipment as in Figure (B), the furnace 1 after the process in Figure 1 (B)
The silane gas in 3 is vacuum degassed to create a vacuum atmosphere, or nitrogen gas (N2) is introduced to create an N2 atmosphere, and in this atmosphere xenon chloride (XeC
l) The polysilicon film 3 is formed by laser annealing using a photo-CVD method using a laser as a light source,
As a result, in addition to being able to omit the heat treatment for removing hydrogen as in the first embodiment, the amorphous silicon film 14 and the polysilicon film 21 can be formed successively while the substrate 2 is placed in the furnace 13, which increases efficiency. You can improve your performance.
また、第２図において炉１３内にボランなどの不純物を
ドーピングすることにより不純物が添化されたポリシリ
コン膜２１を形成することもできる。また第１実施例の
第１図（Ｃ）あるいは第２実施例の第２図の工程におい
て、抵抗層２１ａとなる所定範囲のみレーザーを選択的
に照射して第３図に示すようなポリシリコン膜２１のパ
ターンを形成することにより、第１図（Ｄ）のエツチン
グによるパターニング処理工程を省略することができる
。Further, in FIG. 2, the polysilicon film 21 doped with impurities can be formed by doping an impurity such as borane into the furnace 13. In addition, in the process shown in FIG. 1C of the first embodiment or FIG. By forming the pattern of the film 21, the patterning step by etching shown in FIG. 1(D) can be omitted.
本発明は上記実施例に限定されるものではなく本発明の
要旨の範囲内において種々の変形実施が可能である。例
えば電極、保護膜あるいはダイヤフラムの形成は適宜方
法を選択して行えばよい。The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the invention. For example, electrodes, protective films, or diaphragms may be formed by selecting an appropriate method.
本発明はシリコン含有ガスを用いかつＡｒＦ レーザー
を光源とした光ＣＶＤ法にてアモルファスシリコン膜を
形成し、このアモルファスシリコン膜の表面にレーザー
アニールを施して抵抗層となるポリシリコン膜を形成す
るものであり、またポリシリコン膜を形成するためのレ
ーザーアニールが、真空またはＮ２ガス雰囲気中におい
てＸｅＣ１レーザーを光源とした光ＣＶＤ法にて施され
るものであり、水素抜きのための熱処理工程を省略でき
るポリシリコン抵抗の製造方法を提供できる。In the present invention, an amorphous silicon film is formed by optical CVD using a silicon-containing gas and an ArF laser as a light source, and the surface of this amorphous silicon film is subjected to laser annealing to form a polysilicon film that will become a resistance layer. In addition, the laser annealing to form the polysilicon film is performed by photo-CVD using a XeC1 laser as a light source in a vacuum or N2 gas atmosphere, and the heat treatment step for hydrogen removal is omitted. A method for manufacturing a polysilicon resistor can be provided.
第１図（Ａ）〜（Ｇ）は本発明の第１実施例の製造工程
を示す概略説明図、第２図は本発明の第２実施例を示す
概略説明図、第３図は本発明の他の実施例を示す概略説
明図、第４図（Ａ）〜（Ｆ）は従来の製造工程を示す概
略説明図である。
１４−・アモルファスシリコン膜
２１−ポリシリコン膜
２１ａ−抵抗層Figures 1 (A) to (G) are schematic explanatory diagrams showing the manufacturing process of the first embodiment of the present invention, Figure 2 is a schematic diagram showing the second embodiment of the present invention, and Figure 3 is a schematic diagram showing the manufacturing process of the first embodiment of the present invention. FIGS. 4(A) to 4(F) are schematic explanatory views showing other embodiments, and FIGS. 4(A) to 4(F) are schematic explanatory views showing conventional manufacturing processes. 14-・Amorphous silicon film 21-Polysilicon film 21a-Resistance layer
Claims (2)
源とした光ＣＶＤ法にてアモルファスシリコン膜を形成
し、このアモルファスシリコン膜の表面にレーザーアニ
ールを施して抵抗層となるポリシリコン膜を形成するこ
とを特徴とするポリシリコン抵抗の製造方法。(1) Forming an amorphous silicon film by optical CVD using a silicon-containing gas and using an ArF laser as a light source, and performing laser annealing on the surface of this amorphous silicon film to form a polysilicon film that will become a resistance layer. A method for manufacturing a polysilicon resistor characterized by:
ルが、真空またはＮ＿２ガス雰囲気中においてＸｅＣｌ
レーザーを光源とした光ＣＶＤ法にて施されることを特
徴とする請求項１記載のポリシリコン抵抗の製造方法。(2) Laser annealing to form a polysilicon film is performed using XeCl in a vacuum or N_2 gas atmosphere.
2. The method for manufacturing a polysilicon resistor according to claim 1, wherein the method is carried out by a photo-CVD method using a laser as a light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4772590A JPH03248574A (en) | 1990-02-27 | 1990-02-27 | Manufacture of polysilicon resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4772590A JPH03248574A (en) | 1990-02-27 | 1990-02-27 | Manufacture of polysilicon resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03248574A true JPH03248574A (en) | 1991-11-06 |
Family
ID=12783308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4772590A Pending JPH03248574A (en) | 1990-02-27 | 1990-02-27 | Manufacture of polysilicon resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03248574A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
| JPH07115172A (en) * | 1993-10-19 | 1995-05-02 | Nec Corp | Manufacture of semiconductor device |
| US5413958A (en) * | 1992-11-16 | 1995-05-09 | Tokyo Electron Limited | Method for manufacturing a liquid crystal display substrate |
| US5418019A (en) * | 1994-05-25 | 1995-05-23 | Georgia Tech Research Corporation | Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon |
| US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
-
1990
- 1990-02-27 JP JP4772590A patent/JPH03248574A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
| USRE36371E (en) * | 1992-03-27 | 1999-11-02 | Tokyo Electron Limited | Method of forming polycrystalline silicon film in process of manufacturing LCD |
| US5413958A (en) * | 1992-11-16 | 1995-05-09 | Tokyo Electron Limited | Method for manufacturing a liquid crystal display substrate |
| US5529630A (en) * | 1992-11-16 | 1996-06-25 | Tokyo Electron Limited | Apparatus for manufacturing a liquid crystal display substrate, and apparatus for evaluating semiconductor crystals |
| JPH07115172A (en) * | 1993-10-19 | 1995-05-02 | Nec Corp | Manufacture of semiconductor device |
| US5418019A (en) * | 1994-05-25 | 1995-05-23 | Georgia Tech Research Corporation | Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon |
| US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
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