JPH0324093A - Trialkylsilylmethyl group-containing silane compound - Google Patents
Trialkylsilylmethyl group-containing silane compoundInfo
- Publication number
- JPH0324093A JPH0324093A JP15732089A JP15732089A JPH0324093A JP H0324093 A JPH0324093 A JP H0324093A JP 15732089 A JP15732089 A JP 15732089A JP 15732089 A JP15732089 A JP 15732089A JP H0324093 A JPH0324093 A JP H0324093A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- group
- silane compound
- compound
- trialkylsilylmethyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- -1 silane compound Chemical class 0.000 title claims description 20
- 229910000077 silane Inorganic materials 0.000 title claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 16
- 239000007818 Grignard reagent Substances 0.000 abstract description 11
- 150000004795 grignard reagents Chemical class 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 6
- 238000010992 reflux Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000000010 aprotic solvent Substances 0.000 abstract description 2
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 abstract description 2
- BXBLTKZWYAHPKM-UHFFFAOYSA-M magnesium;methanidyl(trimethyl)silane;chloride Chemical compound [Mg+2].[Cl-].C[Si](C)(C)[CH2-] BXBLTKZWYAHPKM-UHFFFAOYSA-M 0.000 abstract description 2
- 239000011954 Ziegler–Natta catalyst Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 6
- 238000001819 mass spectrum Methods 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000451 chemical ionisation Methods 0.000 description 3
- 238000005886 esterification reaction Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- OOCUOKHIVGWCTJ-UHFFFAOYSA-N chloromethyl(trimethyl)silane Chemical compound C[Si](C)(C)CCl OOCUOKHIVGWCTJ-UHFFFAOYSA-N 0.000 description 2
- MEWFSXFFGFDHGV-UHFFFAOYSA-N cyclohexyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCCC1 MEWFSXFFGFDHGV-UHFFFAOYSA-N 0.000 description 2
- KKEQHXNHVHURDE-UHFFFAOYSA-N dimethoxy-propyl-(trimethylsilylmethyl)silane Chemical compound CCC[Si](OC)(OC)C[Si](C)(C)C KKEQHXNHVHURDE-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- HJONVJQZGZFZKL-UHFFFAOYSA-M CC[Si](CC)(CC)C[Mg]Cl Chemical compound CC[Si](CC)(CC)C[Mg]Cl HJONVJQZGZFZKL-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- GJMIKGWFVJNVRD-UHFFFAOYSA-N cyclohexyl-dimethoxy-(trimethylsilylmethyl)silane Chemical compound C[Si](C)(C)C[Si](OC)(OC)C1CCCCC1 GJMIKGWFVJNVRD-UHFFFAOYSA-N 0.000 description 1
- 125000001891 dimethoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- WSBCVSVJXVVUFU-UHFFFAOYSA-N dimethoxy-bis(trimethylsilylmethyl)silane Chemical compound C[Si](C)(C)C[Si](OC)(C[Si](C)(C)C)OC WSBCVSVJXVVUFU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- SIPHWXREAZVVNS-UHFFFAOYSA-N trichloro(cyclohexyl)silane Chemical compound Cl[Si](Cl)(Cl)C1CCCCC1 SIPHWXREAZVVNS-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 description 1
- JOTSLPSOZKUZIU-UHFFFAOYSA-N trichloro(trimethylsilylmethyl)silane Chemical compound C[Si](C)(C)C[Si](Cl)(Cl)Cl JOTSLPSOZKUZIU-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- IXNQYQOFMSGHMC-UHFFFAOYSA-N triethyl-[[ethyl(dimethoxy)silyl]methyl]silane Chemical compound CC[Si](CC)(CC)C[Si](CC)(OC)OC IXNQYQOFMSGHMC-UHFFFAOYSA-N 0.000 description 1
- MWYJQHWLSVWRPK-UHFFFAOYSA-N trimethoxy(trimethylsilylmethyl)silane Chemical compound CO[Si](OC)(OC)C[Si](C)(C)C MWYJQHWLSVWRPK-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、新規なトリアルキルシリルメチル基含有シラ
ン化合物に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a novel trialkylsilylmethyl group-containing silane compound.
〔従来の技術]
近年、超LSIの高密度化の進展にともなって、種々の
微細加工技術が開発されてきている。例えば、配線の多
層化により生じる段差上に微細なパターンを精度よく形
成するための方法として二層レジスト法がある。この二
層レジスト法は、上層と下層のそれぞれに異なるレジス
トを用いる方法である。この二層レジスト法において上
層に塗布されるレジストは、高感度、高解像度を有する
ことはもちろんであるが、プラズマエッチングにおいて
酸素プラズマに対する耐性が優れていることが要求され
る。この要求を満たすレジストとして、酸素プラズマと
反応して酸化ケイ素を形處するため比較的酸素プラズマ
耐性が高く、かつ合戒が容易なポリシロキサン系のレジ
ストが種々開発されている。[Prior Art] In recent years, various microfabrication techniques have been developed as the density of ultra-LSIs increases. For example, there is a two-layer resist method as a method for accurately forming fine patterns on steps caused by multilayer wiring. This two-layer resist method is a method in which different resists are used for each of the upper layer and the lower layer. In this two-layer resist method, the resist applied as an upper layer not only has high sensitivity and high resolution, but also is required to have excellent resistance to oxygen plasma in plasma etching. Various polysiloxane resists have been developed as resists that meet this requirement, which react with oxygen plasma to form silicon oxide, have relatively high resistance to oxygen plasma, and are easy to assemble.
(発明が解決しようとする課題〕
しかし、いまだ十分な酸素プラズマ耐性を有するポリシ
ロキサン系のレジストは開発されていなかった。(Problems to be Solved by the Invention) However, a polysiloxane resist with sufficient oxygen plasma resistance has not yet been developed.
そこで本発明者らは、酸素プラズマ耐性の高いレジスト
を開発すべく、鋭意研究の結果、該レジストの合成原料
として有用な新規なトリアルキルシリルメチル基含有シ
ラン化合物を開発するに到った。In order to develop a resist with high resistance to oxygen plasma, the present inventors conducted intensive research and as a result, developed a novel trialkylsilylmethyl group-containing silane compound useful as a raw material for synthesizing the resist.
すなわち、本発明は、
一般式(■):
R3
■
(R’):+SiCtizSi(OR”)z
( 1 )〔式中、3個のRlおよび2個
のRtは同一でも異なってもよく、アルキル基であり、
R3は炭素原子数2以上の置換もしくは非置換の1価の
炭化水素基、又は式(■):
?R’):+SiCIl■一 (II
)(ここで、3個のRl は同一でも異
なってもよく、前記のとおりであ
る)
で表されるトリアルキルシリルメチル基である〕
で表される新規なトリアルキルシリルメチル基含有シラ
ン化合物を提供するものである。That is, the present invention has the following formula: General formula (■): R3 ■ (R'): +SiCtizSi(OR'')z
(1) [In the formula, 3 Rl and 2 Rt may be the same or different and are an alkyl group,
R3 is a substituted or unsubstituted monovalent hydrocarbon group having 2 or more carbon atoms, or formula (■): ? R'): +SiCl■1 (II
) (wherein, the three Rl's may be the same or different and are as described above) A novel trialkylsilylmethyl group-containing silane compound represented by This is what we provide.
本発明のトリアルキルシリルメチル基含有シラン化合物
を表す前記式(1)において、3個のRlおよび2個の
RZは同一でも異なってもよく、アルキル基であり、例
えば、メチル基、エチル基、n−プロビル基、i−プロ
ビル基、n−ブチル基等の炭素原子数1〜4のアルキル
基が代表的である。R″は炭素原子数2以上の置換もし
くは非置換の1価の炭化水素基、または前記式(II)
で表されるトリアルキルシリルメチル基である。炭素原
子数2以上の置換もしくは非置換の1価の炭化水素基と
しては、例えば、エチル基、n−プロビル基、i−プロ
ビル基等のアルキル基;フェニル基、トリル基等のアリ
ール基;シクロヘキシル基等のシクロアルキル基などが
代表的である。また、式(II)で表されるトリアルキ
ルシリルメチル基の代表例としては、トリメチルシリル
メチル基、トリエチルシリルメチル基などがある。In the above formula (1) representing the trialkylsilylmethyl group-containing silane compound of the present invention, three Rl and two RZ may be the same or different and are an alkyl group, such as a methyl group, an ethyl group, Representative examples include alkyl groups having 1 to 4 carbon atoms such as n-probyl group, i-probyl group, and n-butyl group. R'' is a substituted or unsubstituted monovalent hydrocarbon group having 2 or more carbon atoms, or the above formula (II)
It is a trialkylsilylmethyl group represented by Examples of substituted or unsubstituted monovalent hydrocarbon groups having 2 or more carbon atoms include alkyl groups such as ethyl, n-propyl, and i-propyl; aryl groups such as phenyl and tolyl; cyclohexyl; A typical example is a cycloalkyl group such as a group. Furthermore, representative examples of the trialkylsilylmethyl group represented by formula (II) include a trimethylsilylmethyl group and a triethylsilylmethyl group.
本発明の一般弐N)で表されるトリアルキルシリルメチ
ル基含有シラン化合物の代表例としては、トリメチルシ
リルメチル(n−プロビル)ジメトキシシラン、トリメ
チルシリルメチル(シクロヘキシル)ジメトキシシラン
、トリエチルシリルメチル(エチル)ジエトキシシラン
、ビス(トリメチルシリルメチル)ジメトキシシランな
どがある。Typical examples of the trialkylsilylmethyl group-containing silane compounds represented by general 2N) of the present invention include trimethylsilylmethyl (n-propyl) dimethoxysilane, trimethylsilylmethyl (cyclohexyl) dimethoxysilane, and triethylsilylmethyl (ethyl) dimethoxysilane. Examples include ethoxysilane and bis(trimethylsilylmethyl)dimethoxysilane.
本発明のシラン化合物の製造は、例えば、式(■):
(R’)zsicH2Mgcj!
( m )(ここで、R’ は前記と同じ)
で表されるグリニャール試薬と、式(■):R’Si
(OR”) x ( IV
)(ここで、R2およびR3は前記と同じ)で表される
トリアルコキシシラン化合物とを反応させる方法により
行うことができる。The silane compound of the present invention can be produced using, for example, the formula (■): (R')zsicH2Mgcj!
(m) (where R' is the same as above) and a Grignard reagent represented by the formula (■): R'Si
(OR”) x (IV
) (wherein R2 and R3 are the same as above).
この製造方法において用いられる式(I[I)で表され
るグリニャール試薬の代表例としては、トリメチルシリ
ルメチルマグネシウムクロライド、トリエチルシリルメ
チルマグネシウムクロライド、i−プロビルジメチルシ
リルメチルマグネシウムクロライド等が挙げられる。こ
のグリニャール試薬は、常法にしたがって得ることがで
きるものであり、式(1)で表されるシラン化合物の置
換基R’に応じて適宜選択される。Representative examples of the Grignard reagent represented by formula (I[I) used in this production method include trimethylsilylmethylmagnesium chloride, triethylsilylmethylmagnesium chloride, i-probyldimethylsilylmethylmagnesium chloride, and the like. This Grignard reagent can be obtained according to a conventional method, and is appropriately selected depending on the substituent R' of the silane compound represented by formula (1).
また、式(IV)で表されるトリアルコキシシラン化合
物の代表例としては、n−プロピルト4Jメトキシシラ
ン、シクロヘキシルトリメトキシシラン、エチルトリエ
トキシシラン、トリメチルシリルメチルトリメトキシシ
ラン等が挙げられる。この式(IV)で表されるトリア
ルコキシシラン化合物は、式(I)で表されるシラン化
合物の所望の置換基R’およびR2に応じて適宜選択さ
れる。Further, representative examples of the trialkoxysilane compound represented by formula (IV) include n-propyl 4J methoxysilane, cyclohexyltrimethoxysilane, ethyltriethoxysilane, trimethylsilylmethyltrimethoxysilane, and the like. The trialkoxysilane compound represented by formula (IV) is appropriately selected depending on the desired substituents R' and R2 of the silane compound represented by formula (I).
この製造方法において、弐(III)で表されるグリニ
ャール試薬の使用量は、通常、前記式(IV)で表され
るトリアルコキシシラン化合物に対して1〜1.2当量
程度である。In this production method, the amount of the Grignard reagent represented by II (III) used is usually about 1 to 1.2 equivalents relative to the trialkoxysilane compound represented by the formula (IV).
用いられる反応溶媒としては、例えば、トルエン、キシ
レン、ヘキサン等の非プロトン系溶媒が挙げられる。Examples of the reaction solvent used include aprotic solvents such as toluene, xylene, and hexane.
反応は、通常、溶媒の還流下に行うのが好ましい。The reaction is usually preferably carried out under reflux of the solvent.
また本発明のシラン化合物は、前記式(III)で表さ
れるグリニャール試薬と、式(V):R’SiX.J(
V)
(ここで、R3は前記と同じであり、Xはハロゲン原子
である)
で表されるトリハロシラン化合物とを反応させて式:
R3
(R’)ffsicHZsiXZ
(ここで、RlおよびR3は前記と同じ)で表されるジ
ハロシラン化合物を得、このジハロシラン化合物を、式
:
R2011
(ここで、R2は前記と同じ)
で表されるアルコールとエステル化反応させることによ
り製造することもできる。Further, the silane compound of the present invention includes a Grignard reagent represented by the above formula (III) and a formula (V): R'SiX. J(
V) (wherein, R3 is the same as above, and X is a halogen atom) to react with a trihalosilane compound represented by the formula: It can also be produced by obtaining a dihalosilane compound represented by the formula (same as above) and subjecting this dihalosilane compound to an esterification reaction with an alcohol represented by the formula: R2011 (where R2 is the same as above).
前記式(V)で表されるトリハロシラン化合物の代表例
としては、n−プロビルトリクロロシラン、シクロヘキ
シルトリクロロシラン、エチルトリクロロシラン、トリ
メチルシリルメチルトリクロロシラン等が挙げられる。Representative examples of the trihalosilane compound represented by the formula (V) include n-propyltrichlorosilane, cyclohexyltrichlorosilane, ethyltrichlorosilane, trimethylsilylmethyltrichlorosilane, and the like.
この式(It)で表されるグリニャール試薬と弐(V)
で表されるトリハロシラン化合物との反応によって生或
したジハロシラン化合物と、アルコールとをエステル化
反応させるときに、生戒するハロゲン化水素を中和する
ために、トリエチルアミン、N,N−ジメチルアミン等
の塩基をジハロシラン化合物に対して2〜3当量使用す
るとよい。Grignard reagent represented by this formula (It) and 2 (V)
When the dihalosilane compound produced by the reaction with the trihalosilane compound represented by the above is subjected to an esterification reaction with an alcohol, triethylamine, N,N-dimethylamine, etc. It is preferable to use 2 to 3 equivalents of the base based on the dihalosilane compound.
反応溶媒、反応温度等は、前記の方法と同様である。The reaction solvent, reaction temperature, etc. are the same as in the above method.
エステル化に用いられるアルコール化合物としては、例
えば、メタノール、エタノール、i−プロバノール等が
挙げられる。Examples of the alcohol compound used for esterification include methanol, ethanol, i-probanol, and the like.
このアルコールの使用量は、式(III)で表されるグ
リニャール試薬と式(V)で表されるトリハロシラン化
合物との反応により得られるジハロシラン化合物に対し
て2〜3当量程度である。The amount of alcohol used is about 2 to 3 equivalents relative to the dihalosilane compound obtained by the reaction of the Grignard reagent represented by formula (III) and the trihalosilane compound represented by formula (V).
以上の2種の方法で得られる反応混合物は、いずれも濾
過して析出塩を除・去した後、蒸留して精製し本発明の
シラン化合物を得ることができる。The reaction mixture obtained by the above two methods can be filtered to remove precipitated salts, and then purified by distillation to obtain the silane compound of the present invention.
本発明のトリアルキルシリルメチル基含有シラン化合物
を単独でもしくは他のジアルコキシシラン化合物ととも
に重合させて得られるオルガノボリシロキサンは、高酸
素プラズマ耐性に優れ、例えば、二層レジスト法に用い
る上層レジストの合戒原料として有用である。The organoborisiloxane obtained by polymerizing the trialkylsilylmethyl group-containing silane compound of the present invention alone or together with other dialkoxysilane compounds has excellent high oxygen plasma resistance, and can be used, for example, as an upper layer resist used in a two-layer resist method. It is useful as a raw material for gathering precepts.
また、本発明のシラン化合物は、かさ高い置換基である
トリアルキルシ,リルメチル基を分子内に有するため、
プロピレンの重合によって得られる重合体の立体規則性
を高めるためにチーグラー・ナ,タ触媒とともに用いら
れる補触媒としても有用である。In addition, since the silane compound of the present invention has a bulky substituent, trialkylcy,lylmethyl group, in the molecule,
It is also useful as a cocatalyst in conjunction with Ziegler-Nata catalysts to enhance the stereoregularity of polymers obtained by polymerization of propylene.
以下、実施例を挙げて本発明を詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例l
還流冷却器、温度計、攪拌器および滴下ロ一トを備えた
内容積ifのガラス製反応器に、n−プロビルトリメト
キシシラン164.3 gおよびT H F300 d
を仕込んだ。次に、トリメチル(クロロメチル)シラン
122.7 gとマグネシウム24.3gをTHF30
0一中で反応させて得られたグリニャール試薬を、還流
下に、滴下した後、24時間熟戒させた。得られた反応
混合物を濾過して、析出塩を除去した後、蒸留して沸点
:81〜83゜C / 3 mm llgの留分を得た
。Example 1 In a glass reactor with internal volume if equipped with a reflux condenser, thermometer, stirrer and addition funnel, 164.3 g of n-propyltrimethoxysilane and 300 d of T H
I prepared it. Next, 122.7 g of trimethyl (chloromethyl) silane and 24.3 g of magnesium were dissolved in THF30.
The Grignard reagent obtained by the reaction in 0.05 mL was added dropwise under reflux, and the mixture was allowed to stand for 24 hours. The resulting reaction mixture was filtered to remove precipitated salts, and then distilled to obtain a fraction with a boiling point of 81-83°C/3 mm llg.
得られた留分の質量スペクトル、 ’H−NMRスペク
トルおよびIRスペクトルを測定したところ、下記に示
す結果が得られた。When the mass spectrum, 'H-NMR spectrum and IR spectrum of the obtained fraction were measured, the results shown below were obtained.
質量スペクトル
電子衝撃法:m/z(スペクトル強度比)205 (1
00)、189(4) 、177(91)、163(3
4) 、147(57) 、133(36)、117(
35) 、91(22)、73(57)、59 (6
7)
化学イオン化法:反応ガス:i−ブタンm/z:220
H−NMRスペクトル
δ: 0.01ppm(s, (CH3) ssi
)0.22ppm(s, −SiCH.Si −)3.
43ppm(s, 一〇CI,)
0.55ppm(m, SiCHzCHzCH:+)
1.34pplll(m, SiCHzCHzCH:
+)0.92ppm(t, SiCHzCHzCH3
)rRスペクトル:下記の波数に吸収ピークが認められ
た。Mass spectrum electron impact method: m/z (spectral intensity ratio) 205 (1
00), 189(4), 177(91), 163(3
4), 147(57), 133(36), 117(
35), 91 (22), 73 (57), 59 (6
7) Chemical ionization method: Reaction gas: i-butane m/z: 220 H-NMR spectrum δ: 0.01 ppm (s, (CH3) ssi
)0.22ppm(s, -SiCH.Si-)3.
43ppm (s, 10CI,) 0.55ppm (m, SiCHzCHzCH:+)
1.34 pplll (m, SiCHzCHzCH:
+)0.92ppm(t, SiCHzCHzCH3
) rR spectrum: Absorption peaks were observed at the following wave numbers.
2940cm−’、2820cm−’、1450C11
−’, 1410C1!1−’1250cm−’、11
90cm−’, 1090cm−’、1050cm−’
830 cm−
以上の測定データから、下記式:
(CH’3) :+SiCHzSi (OCH3) z
I
CHzCHzCHz
で表されるトリメチルシリルメチル(n−プロピル)ジ
メトキシシランが得られたことがわかった。2940cm-', 2820cm-', 1450C11
-', 1410C1!1-'1250cm-', 11
90cm-', 1090cm-', 1050cm-'
830 cm- From the above measurement data, the following formula: (CH'3) :+SiCHzSi (OCH3) z
It was found that trimethylsilylmethyl(n-propyl)dimethoxysilane, expressed as I CHzCHzCHz, was obtained.
(収率:73%〉
実施例2
n−プロビルトリメトキシシランの代わりに、シクロヘ
キシルトリメトキシシラン204.3 gを用いた以外
は、実施例1と同様にして反応させ、沸点:89〜91
゜C / 2 mmHgを有する留分を得た。(Yield: 73%) Example 2 The reaction was carried out in the same manner as in Example 1 except that 204.3 g of cyclohexyltrimethoxysilane was used instead of n-propyltrimethoxysilane, and the boiling point was 89-91.
A fraction with °C/2 mmHg was obtained.
得られた留分の質量スペクトル、 IH−NMRスペク
トルおよびIRスペクトルを測定したところ、下記に示
す結果が得られた。When the mass spectrum, IH-NMR spectrum and IR spectrum of the obtained fraction were measured, the results shown below were obtained.
質量スペクトル
電子衝撃法:m/z(スペクトル強度比)245(29
) 、207(2) 、177(100)、163(1
3) 、147(38) 、133(10)、117(
19) 、9F( 7 ) 、73(10)化学イオン
化法:反応ガス:i−ブタンm/z:260
’H−NMRスペクトル
δ: 0.05ppm(s, (CH3)3Si−)−
0.22ppm(s, −SiCHzSi )3.4
9ppm(s, OCHz)
IRスペクトル:下記の波数に吸収ピークが認められた
。Mass spectrum electron impact method: m/z (spectral intensity ratio) 245 (29
), 207(2), 177(100), 163(1
3), 147(38), 133(10), 117(
19), 9F (7), 73 (10) Chemical ionization method: Reactant gas: i-butane m/z: 260'H-NMR spectrum δ: 0.05 ppm (s, (CH3)3Si-)-
0.22ppm(s, -SiCHzSi)3.4
9 ppm (s, OCHz) IR spectrum: Absorption peaks were observed at the following wave numbers.
2900c+r’、2820cm−’、1450cm−
’、1350c+k−’1245cm−’、1190c
m−’、1085cm−’、1045cm−’880
cm−’、830 cm−’
以上の測定データから、下記式:
で表されるトリメチルシリルメチル(シクロヘキシル)
ジメトキシシランが得られたことがわかった。(収率:
62%)
実施例3
還流冷却器、温度計、攪拌器および滴下ロートを備えた
内容積12のガラス製反応器に、トリノチルシリルメチ
ルトリクロロシラン221.7 gおよびT f{ F
300 mlを仕込んだ。次に、トリメチル(クロロ
メチル)シラン122.7 gとマグネシウム24.3
g @T H F300 ml中で反応させて得られた
グリニャール試薬を、還流下に滴下した後、10時間熟
或させた。得られた反応混合物を濾過して、析出塩を除
去した後、蒸留して沸点:75〜76゜C/2tm I
t gの留分を得た。2900c+r', 2820cm-', 1450cm-
', 1350c+k-'1245cm-', 1190c
m-', 1085cm-', 1045cm-'880
cm-', 830 cm-' From the measurement data above, trimethylsilylmethyl (cyclohexyl) represented by the following formula:
It was found that dimethoxysilane was obtained. (yield:
62%) Example 3 221.7 g of trinotylsilylmethyltrichlorosilane and T f{ F
300 ml was charged. Next, 122.7 g of trimethyl(chloromethyl)silane and 24.3 g of magnesium
The Grignard reagent obtained by reacting in 300 ml of g@T H F was added dropwise under reflux, and then aged for 10 hours. The resulting reaction mixture was filtered to remove precipitated salts, and then distilled to boiling point: 75-76°C/2tm I
A fraction of tg was obtained.
この留分を、撹拌器、還流冷却器、温度計および滴下ロ
ートを備えた内容積1lのガラス製反応器に、トリエチ
ルアミン161.9 gおよびヘキサン500 ydl
とともに仕込んだ。次に、室温下に、滴下ロ一トからメ
タノール54.5 gを滴下した後、1時間熟戒させた
。得られた反応混合物を濾過して析出塩を除去した後、
蒸留して沸点63〜64゜C / 1 mm11gを有
する留分が得られた。This fraction was transferred to a 1 liter glass reactor equipped with a stirrer, reflux condenser, thermometer and dropping funnel with 161.9 g of triethylamine and 500 ydl of hexane.
I prepared it with Next, 54.5 g of methanol was added dropwise from the dropping funnel at room temperature, and the mixture was allowed to sit for 1 hour. After filtering the resulting reaction mixture to remove precipitated salts,
Distillation yielded a fraction with a boiling point of 63-64°C/1 mm, 11 g.
得られた留分の質量スペクトル、 ’H−NMRスペク
トルおよびIRスペクトルを測定したところ、下記に示
す結果が得られた。When the mass spectrum, 'H-NMR spectrum and IR spectrum of the obtained fraction were measured, the results shown below were obtained.
質量スペクトル
電子衝撃法二m/z(スペクトル強度比)249 (1
00)、233(2) 、177(26)、161(8
) 、147(11) 、129(15)、117(1
2) 、89 (21) 、73(29)、59 (2
5)
化学イオン化法:反応ガス:i−ブタンm / z :
264
IH−NMRスペクトル
δ: 0.05ppm(s, (CH3) :+St−
)0.16ppm(s, −SiCHzSi −)3.
45ppm(s, −OCR.)
TRスペクトル二下記の波数に吸収ピークが認められた
。Mass spectrum electron impact method 2 m/z (spectral intensity ratio) 249 (1
00), 233(2), 177(26), 161(8
), 147(11), 129(15), 117(1
2), 89 (21), 73 (29), 59 (2
5) Chemical ionization method: Reactive gas: i-butane m/z:
264 IH-NMR spectrum δ: 0.05ppm(s, (CH3):+St-
)0.16ppm(s, -SiCHzSi-)3.
Absorption peaks were observed at wave numbers below 45 ppm (s, -OCR.) in the TR spectrum.
2940cm−’、2820CIl−’% 1350c
m−’、1250cm−’1185cm−’、1090
C『’、1055cm−’、830 CTI+−’以上
の測定データから、得られた化合物は、下記式:
((C!h)3SiCJ) zsi(OClh)zで表
されるビス(トリメチルシリルメチル)ジメトキシシラ
ンが得られたことがわかった。(収率=76%)
〔発明の効果〕
本発明の新規なトリアルキルシリルメチル基含有シラン
化合物は、高酸素プラズマ耐性を有するオルガノボリシ
ロキサン系のレジストの合戒原料として有用である。ま
た、分子内に非常にかさ高い置換基であるトリアルキル
シリルメチル基を含有するため、プロピレンの立体規則
性重合におけるチーグラー・ナンタ触媒の補触媒として
も有用である。2940cm-', 2820CIl-'% 1350c
m-', 1250cm-'1185cm-', 1090
From the measurement data of C'', 1055 cm-', 830 CTI+-', the obtained compound is bis(trimethylsilylmethyl)dimethoxy represented by the following formula: ((C!h)3SiCJ)zsi(OClh)z It turned out that silane was obtained. (Yield=76%) [Effects of the Invention] The novel trialkylsilylmethyl group-containing silane compound of the present invention is useful as a raw material for organoborisiloxane resists having high oxygen plasma resistance. Furthermore, since it contains a trialkylsilylmethyl group, which is a very bulky substituent, in its molecule, it is useful as a cocatalyst for the Ziegler-Nanta catalyst in the stereoregular polymerization of propylene.
Claims (1)
なってもよく、アルキル基であ り、R^3は炭素原子数2以上の置換もし くは非置換の1価の炭化水素基、又は式 (II): (R^1)_3SiCH_2−(II) (ここで、3個のR^1は同一でも異 なってもよく、前記のとおりであ る) で表されるトリアルキルシリルメチル基 である〕 で表されるトリアルキルシリルメチル基含有シラン化合
物。[Claims] General formula (I): ▲There are mathematical formulas, chemical formulas, tables, etc.▼(I) [In the formula, three R^1 and two R^2 may be the same or different, is an alkyl group, and R^3 is a substituted or unsubstituted monovalent hydrocarbon group having 2 or more carbon atoms, or formula (II): (R^1)_3SiCH_2-(II) (where, three R^1 may be the same or different and is as described above) A trialkylsilylmethyl group-containing silane compound represented by the following.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1157320A JPH0791308B2 (en) | 1989-06-20 | 1989-06-20 | Trialkylsilylmethyl group-containing silane compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1157320A JPH0791308B2 (en) | 1989-06-20 | 1989-06-20 | Trialkylsilylmethyl group-containing silane compound |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0324093A true JPH0324093A (en) | 1991-02-01 |
JPH0791308B2 JPH0791308B2 (en) | 1995-10-04 |
Family
ID=15647119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1157320A Expired - Fee Related JPH0791308B2 (en) | 1989-06-20 | 1989-06-20 | Trialkylsilylmethyl group-containing silane compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0791308B2 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05202069A (en) * | 1991-06-14 | 1993-08-10 | Korea Advanced Inst Of Sci Technol | 1,3-disilacyclobutane derivative and its production |
JP2005076031A (en) * | 2003-09-01 | 2005-03-24 | Samsung Electronics Co Ltd | New siloxane-based resin and semiconductor interlayer insulating film using the same |
JP2007254594A (en) * | 2006-03-23 | 2007-10-04 | Jsr Corp | Composition for surface-hydrophobicizing use, surface-hydrophobicizing method, and semiconductor device |
JP2007254596A (en) * | 2006-03-23 | 2007-10-04 | Jsr Corp | Composition for forming electrical insulation film, related polymer and method for producing the same, method for producing electrical insulation film, and silica-based electrical insulation film |
JP2007254597A (en) * | 2006-03-23 | 2007-10-04 | Jsr Corp | Composition for forming electrical insulation film, related polymer and method for producing the same, method for producing electrical insulation film, and silica-based electrical insulation film |
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JP2007262255A (en) * | 2006-03-29 | 2007-10-11 | Jsr Corp | Polymer, method for producing the same, composition for forming insulation film, method for producing insulation film and silica-based insulation film |
WO2008020592A1 (en) * | 2006-08-15 | 2008-02-21 | Jsr Corporation | Film-forming material, silicon-containing insulating film and method for forming the same |
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-
1989
- 1989-06-20 JP JP1157320A patent/JPH0791308B2/en not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05202069A (en) * | 1991-06-14 | 1993-08-10 | Korea Advanced Inst Of Sci Technol | 1,3-disilacyclobutane derivative and its production |
JP2005076031A (en) * | 2003-09-01 | 2005-03-24 | Samsung Electronics Co Ltd | New siloxane-based resin and semiconductor interlayer insulating film using the same |
JP2007254594A (en) * | 2006-03-23 | 2007-10-04 | Jsr Corp | Composition for surface-hydrophobicizing use, surface-hydrophobicizing method, and semiconductor device |
JP2007254596A (en) * | 2006-03-23 | 2007-10-04 | Jsr Corp | Composition for forming electrical insulation film, related polymer and method for producing the same, method for producing electrical insulation film, and silica-based electrical insulation film |
JP2007254597A (en) * | 2006-03-23 | 2007-10-04 | Jsr Corp | Composition for forming electrical insulation film, related polymer and method for producing the same, method for producing electrical insulation film, and silica-based electrical insulation film |
JP2007262257A (en) * | 2006-03-29 | 2007-10-11 | Jsr Corp | Polymer, method for producing the same, composition for forming insulation film, method for producing insulation film and silica-based insulation film |
JP2007262256A (en) * | 2006-03-29 | 2007-10-11 | Jsr Corp | Polymer, method for producing the same, composition for forming insulation film, method for producing insulation film and silica-based insulation film |
JP2007262255A (en) * | 2006-03-29 | 2007-10-11 | Jsr Corp | Polymer, method for producing the same, composition for forming insulation film, method for producing insulation film and silica-based insulation film |
WO2008020592A1 (en) * | 2006-08-15 | 2008-02-21 | Jsr Corporation | Film-forming material, silicon-containing insulating film and method for forming the same |
JPWO2008020592A1 (en) * | 2006-08-15 | 2010-01-07 | Jsr株式会社 | Film-forming material, silicon-containing insulating film and method for forming the same |
JP2009191108A (en) * | 2008-02-12 | 2009-08-27 | Jsr Corp | Composition for forming silicon-containing film, method for forming silicon-containing film, and silicon-containing film |
JP2010006795A (en) * | 2008-05-30 | 2010-01-14 | Jsr Corp | Method for producing organosilicon compound |
US8932674B2 (en) | 2010-02-17 | 2015-01-13 | American Air Liquide, Inc. | Vapor deposition methods of SiCOH low-k films |
Also Published As
Publication number | Publication date |
---|---|
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