JPH0323902A - Formation of oxide powder - Google Patents
Formation of oxide powderInfo
- Publication number
- JPH0323902A JPH0323902A JP15816589A JP15816589A JPH0323902A JP H0323902 A JPH0323902 A JP H0323902A JP 15816589 A JP15816589 A JP 15816589A JP 15816589 A JP15816589 A JP 15816589A JP H0323902 A JPH0323902 A JP H0323902A
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- viscosity
- indium
- indium oxide
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000843 powder Substances 0.000 title claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000002002 slurry Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000007569 slipcasting Methods 0.000 claims abstract description 16
- 238000000465 moulding Methods 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims description 34
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 33
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 7
- 239000002270 dispersing agent Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 2
- 230000002745 absorbent Effects 0.000 abstract 1
- 239000002250 absorbent Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 239000013077 target material Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011505 plaster Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Landscapes
- Producing Shaped Articles From Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、インジウム系酸化物のスリップキャスト法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a slip casting method for indium-based oxides.
更に詳しくは、スパッタリングターゲット材料等に用い
られるインジウム系酸化物焼結体を製造する際の原料成
形体の成形方法に関するものであり、光エレクトロニク
ス分野の有用な材料を提供ずる際の手法に関するもので
ある。More specifically, it relates to a method for forming a raw material molded body when producing an indium-based oxide sintered body used as a sputtering target material, etc., and a method for providing a material useful in the field of optoelectronics. be.
［従来の技術コ
インジウム酸化物は、化合物半導体の一っであり、透明
性と導電性を有する酸化物の一っである。[Prior Art Coindium oxide is one of compound semiconductors, and one of oxides having transparency and conductivity.
特に、インジウム酸化物に錫の酸化物を微量添加した複
合酸化物は、ＩＴＯ （Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉ
ｄｅ）として良く知られており、このものを透明導電膜
や光選択透過膜としたものは光エレク１・ロニクス分野
で１１］広く用いられている。In particular, a composite oxide made by adding a small amount of tin oxide to indium oxide is ITO (Indium Tin Oxi
This film is widely used in the field of opto-electronics and electronics11], and its transparent conductive film or selectively transmitting light film is widely used in the field of photoelectronics.
インジウム系酸化物等を光エレクトロニクス祠料として
用いる場合、一般に、ガラスや透明フィルム上に、イン
ジウム系酸化物を被覆したものが用いられている。この
インジウム酸化物の被覆法として最も広く実施されてい
る手法の一つは、インジウム系酸化物をターゲット材料
として用いるスパッタリングターゲット法である。When indium-based oxide or the like is used as an optoelectronic abrasive material, glass or a transparent film coated with the indium-based oxide is generally used. One of the most widely used indium oxide coating methods is a sputtering target method using indium-based oxide as a target material.
インジウム系酸化物ターゲット材料の製造法は、インジ
ウム系酸化物粉末を金型を用いて予備成形し、その後、
この戊形体を焼結する方法が一般に実施されている方法
である。しかしながら、大型１
２
のターゲット材料や、特に複雑な形状のターゲット材料
を製造する場合は、この金型成形法は必ずしも適当な方
法ではない。The manufacturing method of indium-based oxide target material is to preform indium-based oxide powder using a mold, and then
This method of sintering the rod-shaped body is a commonly practiced method. However, this molding method is not necessarily suitable for producing large 1 2 target materials or target materials with particularly complex shapes.
一方、スリップキャスト法は、成形相料のスラリーを吸
水性の型に流しこみ成形する手法であるが、この方法は
作業性、形状への対応等の面で好ましい手法の一つであ
り、セラミックス成形法の一つとして注目されている。On the other hand, the slip casting method is a method in which a slurry of molding phase material is poured into a water-absorbing mold and molded.This method is one of the preferable methods in terms of workability and shape adaptability. It is attracting attention as one of the molding methods.
しかし、インジウム系酸化物のように難焼結性であり、
又一般に比較的大型な成形体を必要とする酸化物粉末に
ついては、この方法で成形することについての実用化例
は聞かれない。However, like indium-based oxides, it is difficult to sinter,
Furthermore, there have been no practical examples of molding oxide powders, which generally require relatively large molded bodies, using this method.
［発明が解決しようとする問題点］
本発明の目的は、インジウム系酸化物粉末の成形に適し
たスリップキャスト方法を提供することを目的とするも
のである。[Problems to be Solved by the Invention] An object of the present invention is to provide a slip casting method suitable for molding indium-based oxide powder.
［問題点を解決するための手段］
本発明者等は、スパッタリングターゲット祠料等のイン
ジウム系酸化物焼結体の製造法を検討し、特にインジウ
ム系酸化物のスリップキャスト法による戊形体の製造に
関し鋭意検討した結果、スリップキャスト時のインジウ
ム系酸化物のスラリー濃度、スラリー粘度をある範囲内
に調製することにより、好ましい状態でスリップキャス
ト成形が可能であることを見出し本発明を完成した。[Means for Solving the Problems] The present inventors have investigated a method for manufacturing an indium-based oxide sintered body such as a sputtering target abrasive material, and have particularly focused on manufacturing a rod-shaped body using an indium-based oxide slip casting method. As a result of extensive studies, it was discovered that slip casting can be carried out under favorable conditions by adjusting the slurry concentration and slurry viscosity of indium-based oxide during slip casting within a certain range, thereby completing the present invention.
本発明で用いるインジウム系酸化物とは、インジウム酸
化物、又はインジウム酸化物を主或分とする酸化物を意
味する。このようなインジウム系酸化物は、化合物半導
体として公知であり、例えば、インジウム酸化物に酸化
錫及び／又は他の酸化物、又はハロゲン化物を添加した
酸化物等がある。本発明のインジウム系酸化物のスリッ
プキャスト法に於いては、水等の溶媒とインジウム系酸
化物粉末を混合し、これに分散剤等を添加し撹拌するこ
とによりスラリーとしたものを用いるが、この際のスラ
リー粘度が５×ｌＯ〜５ＸＩＯ３センチポイズ（以下Ｃ
．Ｐ．と略記）の範囲で、スラリー濃度の変化に対する
スラリー粘度の変化率（スラリー濃度が高濃度側にＬｖ
ｔ％変化する時のスラリー粘度の対数の変化率即ち、Δ
（ｌｏｇ（粘度））ｌΔ（スラリー濃度（％〉）が２以
下となるスラリーを用いることが必要である。The indium-based oxide used in the present invention means an indium oxide or an oxide mainly containing indium oxide. Such indium-based oxides are known as compound semiconductors, and include, for example, oxides obtained by adding tin oxide and/or other oxides or halides to indium oxide. In the slip casting method of indium-based oxide of the present invention, a slurry is used by mixing a solvent such as water and indium-based oxide powder, adding a dispersant, etc., and stirring the mixture. At this time, the slurry viscosity is 5×1O to 5×IO3 centipoise (hereinafter referred to as C
．． P. The rate of change in slurry viscosity with respect to change in slurry concentration (abbreviated as ``Lv'')
The rate of change in the logarithm of the slurry viscosity when changing by t%, that is, Δ
It is necessary to use a slurry with a (log (viscosity)) lΔ (slurry concentration (%)) of 2 or less.
前記スラリー粘度が５ Ｘ ＩＯｃ．Ｐ．未満の場合は
、スラリー中のインジウム系酸化物が操作中に沈降し、
溶媒とインジウム系酸化物が分離し易くなる。又、スラ
リー粘度が％ ５ ＸＩＯ’ Ｃ．Ｐ．を越えた場合は
、インジウム系酸化物のスラリーは、流動性が著しく低
下し、吸水性の型の中に均一に鋳込むことが困難となる
。The slurry viscosity is 5×IOc. P. If the indium-based oxide in the slurry settles out during operation,
The solvent and indium-based oxide are easily separated. Also, if the slurry viscosity is %5XIO'C. P. If the amount exceeds 1, the fluidity of the indium-based oxide slurry decreases significantly, making it difficult to uniformly cast it into a water-absorbing mold.
本発明のスラリー濃度は、一般に６５％以上９０％以下
の範囲で用いるが、前記スラリー濃度が低すぎると、ス
ラリー粘度が本発明の範囲未満となり、スラリー濃度が
高すぎると、スラリー粘度が本発明の範囲を越えるよう
になる。The slurry concentration of the present invention is generally used in the range of 65% or more and 90% or less, but if the slurry concentration is too low, the slurry viscosity will be less than the range of the present invention, and if the slurry concentration is too high, the slurry viscosity will be lower than the range of the present invention. exceeds the range of
本発明に於いてはスラリー濃度に対するスラリー粘度の
変化率が、インジウム系酸化物のスリップキャスト法に
於いて極めて重要である。In the present invention, the rate of change in slurry viscosity with respect to slurry concentration is extremely important in the slip casting method of indium-based oxides.
インジウム系酸化物のスラリーを吸水性の型へ鋳込むと
、型からの脱水が始り、スラリーは型へ着肉していくが
、この過程でスラリー濃度が高濃度側に変化することに
なる。本発明では、この際用いるスラリーが前記した条
件を満たすことが必須であるが、この変化率を求める範
囲は、少なくとも調製したスラリーの高濃度側２％の範
囲が必要である。本発明で言うスラリー粘度の値は、通
常の回転粘度計により求められる。原料スラリーを粘度
計を用いて測定し、粘度のスラリー濃度依存性を求め、
これによりスラリー粘度の変化率が上式を満足する範囲
のスラリーを調製しスリップキャスト法の原料として用
いる。When slurry of indium-based oxide is cast into a water-absorbing mold, water begins to dehydrate from the mold and the slurry adheres to the mold, but during this process the slurry concentration changes to a higher concentration side. . In the present invention, it is essential that the slurry used at this time satisfies the above-mentioned conditions, but the range for determining the rate of change must be at least 2% on the high concentration side of the prepared slurry. The value of slurry viscosity referred to in the present invention is determined using a normal rotational viscometer. Measure the raw material slurry using a viscometer, determine the dependence of viscosity on the slurry concentration,
In this way, a slurry having a rate of change in slurry viscosity that satisfies the above formula is prepared and used as a raw material for the slip casting method.
本発明で、前記したスラリー粘度の変化率が２を越える
と、スリップキャスト時のスラリーの均一性が著しく低
下し、型の中でスラリ一同士が均一に混ざり合うことが
困難となり、スラリーの会合点で明確な境界が存在し、
これが成形体のヒビや割れの発生する原因となり、焼結
時に成形体の割れを生じさせる原因となる。In the present invention, if the above-mentioned rate of change in slurry viscosity exceeds 2, the uniformity of the slurry during slip casting will be significantly reduced, it will be difficult to mix the slurries uniformly in the mold, and the slurry will not meet. There is a clear boundary at the point,
This causes cracks and cracks to occur in the molded body, and causes cracks in the molded body during sintering.
前記したスラリー粘度の変化率を前記した限定範囲に調
製する方法は、用いるインジウム系酸化物の粒度、スラ
リーとする際用いる溶媒の種類、分散剤等の添加物の種
類、その使用量等々により行なうことができる。The method for adjusting the rate of change in slurry viscosity within the limited range described above is carried out by adjusting the particle size of the indium-based oxide used, the type of solvent used when preparing the slurry, the type of additives such as dispersants, the amount used, etc. be able to.
本発明は、インジウム系酸化物のスリップキャスト時の
粘度について限定するものであるが、スリップキャスト
のその他の条件は特に制限されず、適宜選択される。Although the present invention limits the viscosity of the indium-based oxide during slip casting, other slip casting conditions are not particularly limited and are appropriately selected.
用いるインジウム系酸化物の粒度は、平均粒径↓μｍ以
下のものが高密度の焼結体を得るには好ましい。尚、微
細なインジウム系酸化物を用いる場合は必然的にスラリ
ー粘度は上昇するが、このような場合は界面活性剤等の
分散剤の量を多めに用いるなどして本発明で限定した範
囲内に調製する。スラリーを作成する場合は、溶媒は一
般に水を用いることができる。又、スラリー調製時には
公知の結合剤を加えることもできる。さらに、スラリー
調製時に消泡剤を加え、公知の真空脱泡処理を行うこと
も適宜実施することが出来る。In order to obtain a high-density sintered body, it is preferable that the particle size of the indium-based oxide used be less than or equal to the average particle size ↓ μm. Note that when using fine indium-based oxides, the slurry viscosity will inevitably increase, but in such cases, it may be necessary to use a larger amount of a dispersant such as a surfactant to keep it within the range specified in the present invention. Prepare to. When creating a slurry, water can generally be used as a solvent. Also, a known binder can be added when preparing the slurry. Furthermore, when preparing the slurry, an antifoaming agent may be added and a known vacuum defoaming treatment may be carried out as appropriate.
このようにして調製したスラリーは、吸水性の型の中に
流しこまれるが、吸水性の型とは吸水性のセラミックス
、例えば石膏や吸水性の樹脂の型を用いることができる
。The slurry thus prepared is poured into a water-absorbing mold, and the water-absorbing mold may be a mold made of water-absorbing ceramics, such as plaster or water-absorbing resin.
この吸水性の型にスラリーが着肉した後、型より着肉体
を取り出し、乾燥して成形体とする。さらに、この成形
体を焼結すれば、インジウム系酸化物の焼結体が得られ
、例えばスパッタリングターゲッ１・利料として、光エ
レク１・ロニクス関連の素子や部品を作成するための好
適な材料として用いることかできる。After the slurry is deposited on this water-absorbing mold, the deposited material is removed from the mold and dried to form a molded body. Furthermore, by sintering this molded body, a sintered body of indium-based oxide can be obtained, which can be used as a sputtering target, for example, and as a suitable material for producing optical electronics and electronics-related elements and parts. It can be used as
［允明の効果］
本発明は、インジウム系酸化物のスリップキャス１・法
を提供するものであり、本発明により経済的な手法で、
かつ任意な形状のインジウム系酸化物の戊形体を得るこ
とが可能となる。このインジウム系酸化物成形体を焼結
することにより、例えば、高密度、高強度なインジウム
系酸化物ターゲット＋Ａ料が得られ、このものは光エレ
クトロニクス関連の素子や部品を作成するための月料と
して用いることができる。[Effect of Yumei] The present invention provides a slip casting method for indium-based oxides.
Moreover, it becomes possible to obtain an indium-based oxide rod having an arbitrary shape. By sintering this indium-based oxide molded body, for example, a high-density, high-strength indium-based oxide target + A material can be obtained, and this material is used as a monthly fee for producing optoelectronics-related elements and parts. It can be used as
［実施例］ 以下、実施例で本発明を詳述するが、本発明は７ これに限定されるものではない。[Example] The present invention will be described in detail in Examples below. It is not limited to this.
実施例ｌ
Ｉｎ２０３ ９５ｗｔ％、ＳｎＯ。５Ｗｔ％よりなるイ
ンジウム酸化物に、微量の錫酸化物を添加したインジウ
ム系酸化物粉末を調製した。この酸化物の平均粒径は約
０．６μｍであった。この酸化物に、水を加え、分散剤
（ヘキスト製ｒＡ−４０Ｊ・・・ポリカルボン酸アンモ
ニウム塩系）、結合剤（中京樹脂製ｒＷＥ−５１８Ｊ・
・・アクリル系エマルジョン）を微量（約０．５ｗｔ％
）添加し、撹拌してスラリーを調製し、回転粘度計で、
スラリー濃度と粘度の関係を測定した。結果を図１に示
す。Example l In203 95wt%, SnO. An indium-based oxide powder was prepared by adding a trace amount of tin oxide to indium oxide of 5 Wt%. The average particle size of this oxide was about 0.6 μm. Add water to this oxide, add a dispersant (rA-40J manufactured by Hoechst, polycarboxylic acid ammonium salt type), and a binder (rWE-518J manufactured by Chukyo Jushi).
・Acrylic emulsion) in a small amount (approximately 0.5 wt%)
), stir to prepare a slurry, and measure with a rotational viscometer.
The relationship between slurry concentration and viscosity was measured. The results are shown in Figure 1.
この結果をもとに、各種のスラリーを調製し、３００ｍ
ｍφ、厚み１０ｍｍの石膏型にスラリーを流しこみスリ
ップキャスト成形を行なった。Based on this result, various slurries were prepared and 300 m
The slurry was poured into a plaster mold having a diameter of mφ and a thickness of 10 mm, and slip cast molding was performed.
本発明で開示されるスラリーの粘度範囲である図１の点
Ａで調製したスラリ−（粘度７．２ ＸＬＯＣ．Ｐ．、
スラリー粘度の変化率＝１．２〜１．３）を用いた場合
は良好な着肉体が得られ、乾燥後の成形体密度は約２．
９ ７ｃｍ３であった。The slurry prepared at point A in FIG. 1, which is the viscosity range of the slurry disclosed in the present invention (viscosity 7.2 XLOC.P.
When using a slurry viscosity change rate of 1.2 to 1.3), a good adherent body was obtained, and the density of the compact after drying was approximately 2.
It was 97cm3.
８
この成形体を、１４００℃で焼或したところ、焼結密度
５．８ｚ／ｃｍ’の焼粘体が得られた。8 When this molded body was sintered at 1400°C, a sintered viscous body with a sintered density of 5.8z/cm' was obtained.
次に、図１の点Ｂ（粘度４ Ｘ ｔｏ Ｃ．Ｐ． ’）
で調製したスラリーを用いたところ、短時間の内に粒子
の沈陣が起り、１」的とする成型体が得られず、粉末状
の部分が残った成型体しか得られなかった。Next, point B in Figure 1 (viscosity 4 X to C.P.')
When the slurry prepared in step 1 was used, particles settled within a short period of time, and the molded body intended for 1'' could not be obtained, but only a molded body with powdery portions remaining.
さらに図１の点Ｃて調製したスラリー（粘度１．６ｘｉ
ｏ２ｃ．ｐ．、スラリー粘度の変化率〉２）を用いたと
ころ、着陸肉耐の乾燥時にひび割れが発生し、成型体に
亀裂か入った。Additionally, the slurry prepared at point C in Figure 1 (viscosity 1.6xi
o2c. p. , rate of change in slurry viscosity>2), cracks occurred during drying of the landing wall, and cracks appeared in the molded body.
実施例２
Ｉｎ２０３ ９０ｗｔ％、Ｓｎ０２１０ｗｔ％よりなる
インジウム酸化物に、微量の錫酸化物を添加したインジ
ウム系酸化物粉末を調製した。この酸化物の平均粒径は
約０．３μｍであった。この酸化物を実施例１に準じて
スラリーとし、濃度と粘度との関係を７１１１１定した
。結果を図２に示す。Example 2 Indium-based oxide powder was prepared by adding a trace amount of tin oxide to indium oxide consisting of 90 wt% In203 and 10 wt% Sn02. The average particle size of this oxide was about 0.3 μm. This oxide was made into a slurry according to Example 1, and the relationship between concentration and viscosity was determined. The results are shown in Figure 2.
この結果をもとに、各種のスラリーを調製し、３００ｍ
ｍφ、厚み１０ｎｏｎの石膏型にスラリ−を流しこみス
リップキャスト成形を実施した。Based on this result, various slurries were prepared and 300 m
The slurry was poured into a plaster mold having a diameter of mφ and a thickness of 10non, and slip cast molding was carried out.
本発明で開示されるスラリーの粘度範囲である図２の点
Ｄで調製したスラリー（粘度９．５ ＸＩＯ２Ｃ．Ｐ．
、スラリー粘度の変化率−１．３〜１．５）を用いた場
合は良好な着肉体が得られ、乾燥後の成形体密度約３．
３ｇ／ｃｍ３であった。この成形体を、１４００℃で焼
成した所、焼結密度５．４ｇ／ｃｉｌ３の焼結体が得ら
れた。The slurry prepared at point D in FIG. 2, which is the viscosity range of the slurry disclosed in the present invention (viscosity 9.5 XIO2C.P.
, change rate of slurry viscosity -1.3 to 1.5), a good adherent body was obtained, and the density of the molded body after drying was about 3.
It was 3g/cm3. When this molded body was fired at 1400°C, a sintered body with a sintered density of 5.4 g/cil3 was obtained.
次に、図２の点Ｅ（粘度８Ｘｌ０３Ｃ．Ｐ． 、スラリ
ー粘度の変化率一約３．５）で調製したスラリーを用い
たところ、スラリーの流動性が著しく低下しスリップキ
ャストを行なうことが困難であった。Next, when we used the slurry prepared at point E in Figure 2 (viscosity 8Xl03C.P., rate of change in slurry viscosity - about 3.5), the fluidity of the slurry decreased significantly, making it difficult to perform slip casting. Met.
図１は実施例ｌのスラリーのスラリー濃度と粘度との関
係を示す。
図２は実施例２のスラリーの、スラリー濃度と粘度との
関係を示す。FIG. 1 shows the relationship between slurry concentration and viscosity of the slurry of Example 1. FIG. 2 shows the relationship between slurry concentration and viscosity of the slurry of Example 2.
Claims (1)
体を成形するに当り、インジウム系酸化物スラリーの粘
度が５×１０〜５×１０＾３センチポイズの範囲で、当
該スラリー濃度の変化に対するスラリー粘度の変化率（
Δ（ｌｏｇ（粘度））／Δ（スラリー濃度（％）））が
２以下となるように調製したスラリーを用いることを特
徴とする酸化物粉末の成形方法。1) When forming an indium-based oxide molded body by the slip casting method, the viscosity of the indium-based oxide slurry is in the range of 5 x 10 to 5 x 10^3 centipoise, and the slurry viscosity changes with respect to changes in the slurry concentration. rate(
A method for molding oxide powder, characterized by using a slurry prepared such that Δ(log(viscosity))/Δ(slurry concentration (%))) is 2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15816589A JP2663636B2 (en) | 1989-06-22 | 1989-06-22 | Molding method of oxide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15816589A JP2663636B2 (en) | 1989-06-22 | 1989-06-22 | Molding method of oxide powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0323902A true JPH0323902A (en) | 1991-01-31 |
| JP2663636B2 JP2663636B2 (en) | 1997-10-15 |
Family
ID=15665691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15816589A Expired - Fee Related JP2663636B2 (en) | 1989-06-22 | 1989-06-22 | Molding method of oxide powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2663636B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05139117A (en) * | 1991-11-15 | 1993-06-08 | Sumitomo Rubber Ind Ltd | Pneumatic tire for motorcycle |
| JP2009537426A (en) * | 2006-05-18 | 2009-10-29 | イドロ−ケベック | Ceramic preparation process, the ceramic thus obtained and its use as a sputtering target in particular |
-
1989
- 1989-06-22 JP JP15816589A patent/JP2663636B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05139117A (en) * | 1991-11-15 | 1993-06-08 | Sumitomo Rubber Ind Ltd | Pneumatic tire for motorcycle |
| JP2009537426A (en) * | 2006-05-18 | 2009-10-29 | イドロ−ケベック | Ceramic preparation process, the ceramic thus obtained and its use as a sputtering target in particular |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2663636B2 (en) | 1997-10-15 |
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