JPH03236471A - Reduced pressure vapor growth device - Google Patents
Reduced pressure vapor growth deviceInfo
- Publication number
- JPH03236471A JPH03236471A JP3081390A JP3081390A JPH03236471A JP H03236471 A JPH03236471 A JP H03236471A JP 3081390 A JP3081390 A JP 3081390A JP 3081390 A JP3081390 A JP 3081390A JP H03236471 A JPH03236471 A JP H03236471A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- supply system
- gaseous
- film
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 45
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 238000007865 diluting Methods 0.000 claims abstract description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000010574 gas phase reaction Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000012808 vapor phase Substances 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 239000002019 doping agent Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- -1 tetramethyl ester Chemical class 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程において用いられる減圧
式気相成長装置に関し、特に不純物ガスの供給手段に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduced pressure vapor phase growth apparatus used in the manufacturing process of semiconductor devices, and particularly to means for supplying impurity gas.
５従来の技術〕
従来、この種の減圧式気相成長は第２図に示す様に、反
応炉３内にウェーハ保持部９により保持されたウェーハ
１０をハツチ８等によりセットし、真空排気システム１
１により一定の真空状態にしたのち、例えばＴＥ０１
（テトラエトキシシラン）ガス供給システム１や酸素ガ
ス供給システム４より流量コントローラ２，２Ａを介し
て気相反応ガスを反応炉３内に導入し、同時に微量の不
純物をウェーハ１０の表面に形成される膜に導入する為
の気相反応ガス（以下ドーピングガスという）を、例え
ばＴＭＯＢ （ホウ素トリメチルエステル）供給システ
ム５より流量コントローラ２Ｂでその流量をコントロー
ルして、均一に不純物が成長膜に混入するように複数の
穴を有するガス導入管６を通して反応炉３内に流す構成
となっていた。5. Prior Art] Conventionally, in this type of reduced-pressure vapor phase growth, as shown in FIG. 1
After creating a constant vacuum state using 1, for example, TE01
(Tetraethoxysilane) A gas phase reaction gas is introduced into the reactor 3 from the gas supply system 1 and the oxygen gas supply system 4 via the flow rate controllers 2 and 2A, and at the same time, a small amount of impurity is formed on the surface of the wafer 10. The flow rate of a gas phase reaction gas (hereinafter referred to as doping gas) to be introduced into the film is controlled by a flow controller 2B from, for example, a TMOB (boron trimethyl ester) supply system 5, so that impurities are uniformly mixed into the grown film. It was configured to flow into the reactor 3 through a gas introduction pipe 6 having a plurality of holes.
上述した従来の減圧式気相成長装置に於ては、ドーピン
グガスを導入する複数の穴が開いたガス導入管６の穴径
と穴位置にウェーハ１０表面に形成される膜の膜質が依
存する傾向がある。特にドーピングガスを微量に流す場
合はこの傾向が顕著にでて膜質を悪くし、歩留りを低下
させるという欠点がある。In the conventional reduced pressure vapor phase growth apparatus described above, the quality of the film formed on the surface of the wafer 10 depends on the hole diameter and hole position of the gas introduction tube 6, which has a plurality of holes for introducing doping gas. Tend. In particular, when a small amount of doping gas is flowed, this tendency is noticeable, resulting in poor film quality and a reduction in yield.
本発明の減圧式気相成長装置は、反応炉内にセットされ
た試料表面に膜を形成する為の気相反応ガスを供給する
ガス供給システムと、前記膜内に不純物を混入させる為
の不純物ガス供給システムとを有する減圧式気相成長装
置に於て、前記不純物ガスを不活性ガスで希釈する為の
手段を設けたものである。The reduced pressure vapor phase growth apparatus of the present invention includes a gas supply system that supplies a vapor phase reaction gas to form a film on the surface of a sample set in a reactor, and an impurity system that supplies impurities to the film. The present invention is a reduced pressure type vapor phase growth apparatus having a gas supply system, and is provided with means for diluting the impurity gas with an inert gas.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の模式断面図であり、ウェー
ハ表面にＢＰＳＧ膜を成長させる場合を示している。FIG. 1 is a schematic cross-sectional view of one embodiment of the present invention, showing the case where a BPSG film is grown on the surface of a wafer.
第１図において減圧式気相成長装置は、反応炉３と、こ
の反応炉３内を排気する真空ポンプ等からなる真空排気
システム１１と、反応炉３内に気相反応ガスを供給する
ためのＴＥＯＳガス供給システム１及び酸素ガス供給シ
ステム４と、ドーピングガスを供給するためのＴＭＯＢ
ガス供給システム５と、このドーピングガスを希釈する
ためのドーピングガス配管に接続された不活性ガス供給
システム７とから主に構成されている。以下操作方法と
共に更に説明する。In FIG. 1, the reduced pressure vapor phase growth apparatus includes a reactor 3, a vacuum evacuation system 11 consisting of a vacuum pump etc. for evacuating the inside of the reactor 3, and a system 11 for supplying a vapor phase reaction gas into the reactor 3. TEOS gas supply system 1, oxygen gas supply system 4, and TMOB for supplying doping gas
It mainly consists of a gas supply system 5 and an inert gas supply system 7 connected to a doping gas pipe for diluting the doping gas. This will be further explained below along with the operating method.
反応炉３内にウェーハ保持具９により保持されたウェー
ハ１０をハツチ８等によりセットし、反応炉３内を真空
排気システム１１により一定の真空状態とする。次でＴ
ＥＯＳガス供給システム１と酸素ガス供給システム４よ
り流量コントローラ２．２Ａを介して一定量の気相反応
ガスを反応炉３内に導入する。同時にドーピングガスを
ＴＭ○Ｂガス供給システム５から流量コントローラ２Ｂ
によりその流量をコントロールすると共に、不活性ガス
供給システム７からＮ２ガスを出して流量コントローラ
２Ｃで流量をコントロールし、複数の穴を有するガス導
入管６に入る前でこのドーピングガスを希釈する。A wafer 10 held by a wafer holder 9 is set in a reaction furnace 3 using a hatch 8 or the like, and the inside of the reaction furnace 3 is brought into a constant vacuum state by an evacuation system 11. Next T
A certain amount of gas phase reaction gas is introduced into the reactor 3 from the EOS gas supply system 1 and the oxygen gas supply system 4 via the flow rate controller 2.2A. At the same time, the doping gas is supplied from the TM○B gas supply system 5 to the flow rate controller 2B.
At the same time, N2 gas is output from the inert gas supply system 7 and the flow rate is controlled by the flow rate controller 2C to dilute the doping gas before it enters the gas introduction pipe 6 having a plurality of holes.
なおドーピングガスとしては、ＴＭＯＢガスの他にホス
フィン（ｐ）（３）ガスを他のガス導入管より反応炉３
に同時導入する。In addition to TMOB gas, phosphine (p) (3) gas was introduced into the reactor 3 from another gas introduction pipe as a doping gas.
will be introduced simultaneously.
このように本発明によれば、ドーピングガスとしてのＴ
ＭＯＢガスは、Ｎ２ガスにより希釈されてガス導入管６
より導入されるため、ドーピングガスが微量の場合でも
ドーピングガスは均一にウェーハ１０の表面に吹き付け
られる。従って、つ工−ハ１０の表面に形成される膜は
均一な膜質のものとなる。Thus, according to the present invention, T as a doping gas
The MOB gas is diluted with N2 gas and passed through the gas introduction pipe 6.
Since the doping gas is introduced in a small amount, the doping gas can be uniformly sprayed onto the surface of the wafer 10 even if the amount of the doping gas is small. Therefore, the film formed on the surface of the tube 10 has a uniform quality.
なお、上記実施例においては不活性ガスとしてＮ２ガス
を用いた場合について説明したが、Ａｒ等他のガスであ
ってもよい。In addition, although the case where N2 gas was used as an inert gas was demonstrated in the said Example, other gases, such as Ar, may be used.
以上説明した様に本発明は、不純物ガスを微量に流して
使用する減圧式気相成長装置において、不純物ガスを不
活性ガスで希釈するための手段を設けることにより、不
純物ガスを試料に均一に吹き付けることかできるため、
試料表面に形成される膜の膜質の均一性を向上させるこ
とができるという効果がある。As explained above, the present invention provides a means for diluting the impurity gas with an inert gas in a reduced pressure vapor phase growth apparatus that is used by flowing a small amount of impurity gas, thereby uniformly distributing the impurity gas onto the sample. Because it can be sprayed,
This has the effect of improving the uniformity of the film quality of the film formed on the sample surface.
第１図は本発明の一実施例の模式断面図、第２図は従来
の減圧式気相成長装置の模式断面図である。
１・・・ＴＥＯＳガス供給システム、２Ａ、２Ｂ。
２Ｃ・・・流量コントローラ、３・・・反応炉、４・・
・酸素ガス供給システム、５・・・ＴＭＯＢガス供給シ
ステム、６・・・ガス導入管、７・・・不活性ガス供給
システム、８・・・ハツチ、９・・・ウェーハ保持治具
、１０・・・ウェーハ、１１・・・真空排気システム。FIG. 1 is a schematic sectional view of an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional reduced pressure type vapor phase growth apparatus. 1...TEOS gas supply system, 2A, 2B. 2C...Flow rate controller, 3...Reactor, 4...
- Oxygen gas supply system, 5... TMOB gas supply system, 6... Gas introduction pipe, 7... Inert gas supply system, 8... Hatch, 9... Wafer holding jig, 10. ...Wafer, 11...Vacuum exhaust system.
Claims (1)
相反応ガスを供給するガス供給システムと、前記膜内に
不純物を混入させる為の不純物ガス供給システムとを有
する減圧式気相成長装置に於て、前記不純物ガスを不活
性ガスで希釈する為の手段を設けたことを特徴とする減
圧式気相成長装置。A reduced pressure vapor phase growth system that has a gas supply system that supplies a gas phase reaction gas to form a film on the surface of a sample set in a reactor, and an impurity gas supply system that mixes impurities into the film. A reduced pressure type vapor phase growth apparatus, characterized in that the apparatus is provided with means for diluting the impurity gas with an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3081390A JPH03236471A (en) | 1990-02-09 | 1990-02-09 | Reduced pressure vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3081390A JPH03236471A (en) | 1990-02-09 | 1990-02-09 | Reduced pressure vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03236471A true JPH03236471A (en) | 1991-10-22 |
Family
ID=12314133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3081390A Pending JPH03236471A (en) | 1990-02-09 | 1990-02-09 | Reduced pressure vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03236471A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333266B1 (en) | 1998-03-12 | 2001-12-25 | Nec Corporation | Manufacturing process for a semiconductor device |
-
1990
- 1990-02-09 JP JP3081390A patent/JPH03236471A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333266B1 (en) | 1998-03-12 | 2001-12-25 | Nec Corporation | Manufacturing process for a semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6197694B1 (en) | In situ method for cleaning silicon surface and forming layer thereon in same chamber | |
| JPH04218916A (en) | Heat treatment device | |
| JPS6115322A (en) | Homogeneous chemical depositing method and device therefor | |
| CN101477945B (en) | Method and apparatus for preventing/reducing substrate back polymer deposition | |
| JPH03236471A (en) | Reduced pressure vapor growth device | |
| US4651673A (en) | CVD apparatus | |
| JPH03263818A (en) | Metal organic vapor growth apparatus | |
| JPH04279022A (en) | Semiconductor manufacturing device | |
| JPH0658880B2 (en) | Vapor phase epitaxial growth system | |
| JPS6136372B2 (en) | ||
| JPS6134932A (en) | Vapor growing process | |
| US5286523A (en) | Method of processing substrates and substrate processing apparatus | |
| JPH0888187A (en) | Equipment and method for vapor growth of semiconductor | |
| JPH11102871A (en) | Manufacture of semiconductor single-crystal thin film | |
| JPH01257321A (en) | Vapor growth apparatus | |
| JP2000195812A (en) | Vapor phase doping apparatus and vapor phase doping method | |
| EP0279406A2 (en) | Device for forming silicon oxide film | |
| JPH01106425A (en) | Manufacture of semiconductor device | |
| JPH11186171A (en) | Semiconductor manufacturing device | |
| JPH01148788A (en) | Device for vapor phase epitaxial growth | |
| JPH0722124B2 (en) | Exhaust gas device for CVD furnace | |
| JPH04329626A (en) | Processor of semiconductor device | |
| JPH0669138A (en) | Low pressure vapor phase epitaxial growth system | |
| JPH0648829Y2 (en) | Compound semiconductor vacuum vapor deposition equipment | |
| JPH10237654A (en) | Vapor growth device |