JPH03236265A - Ic package and manufacture thereof - Google Patents

Abstract

PURPOSE:To reduce the thickness of the title package by providing a framelike insulator integrated with the periphery of a thin platelike insulator be mounted with an IC chip and having a conductive layer to be conducted to an electrode pad on the chip. CONSTITUTION:A thin platelike insulator 11 to place an IC chip 13 and a framelike insulator 12 integrated at the periphery of the insulator 11 are formed, for example, of ceramics. A plurality of conductive layers 16 are formed on the periphery of an IC chip placing surface of the insulator 11, a conductive layer 20 is formed in a through hole 19, a conductive layer 21 is further formed from the bottom to the side face, a conductive layer 17 is formed from the surface of the insulator 12 to the side face, and they are conducted. Here, when the thickness of the insulator 11 is d and the entire thickness of the insulators 11, 12 is D, if the insulators 11, 12 are so set as to satisfy the relation of d<=0.5mm or d/D<=0.5 and D<=1.5mm, a most desirable effect is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a thin C package and a method for manufacturing the same.

(Prior Art) IC packages having structures as shown in FIGS. 9 and 10 are known. 1 is a flat plate-shaped first insulator on which an IC chip 3 is to be mounted, and 2 is a frame-shaped second insulator that is integrated with the first insulator 1 at its periphery. The insulator is made of, for example, ceramic or resin. A conductive layer 6 having a plurality of, for example, six, bonding pads is formed around the IC chip mounting surface of the first insulator 1 toward the end surface, and on the surface and end surface of the second insulator 2. A similar conductive layer 7 is formed so as to be electrically conductive with the conductive layer 6. The electrode pads 4 provided on the TO chip 3 are electrically connected to the conductive layer 6 via the bonding wires 5, and therefore the electrode pads 4 are electrically connected to the conductive layer 7. An IC package having such a structure is generally used as a leadless ceramic chip carrier (LCC) and is widely used. After the chip is mounted, a resin 8 is molded into the recessed portion of the second insulator 2, or a metal cap, a ceramic cap, or the like is provided to protect the IC chip 3 from the external atmosphere.

An IC package having such a structure has conventionally been manufactured by the following method. FIG. 11 shows the first manufacturing method, in which the ceramic green sheet 10 is first placed in the lower mold 9A, and then the upper mold 9B is placed in the lower mold 9A.
The green sheet 10 is pressed by descending to obtain a concave structure. Next, a plating process is performed to form a conductive layer 6,
7, the IC package is completed.

FIG. 12 shows a second manufacturing method, in which a plurality of green sheets 1 are printed with a conductive layer in a desired pattern in advance.
0a, 10b, and 10c are prepared, and then each green sheet is laminated and hot pressed using a silicon mold or the like to obtain a concave structure.

Next, a plating process is performed to complete the IC package.

As described above, the IC package having the structure shown in FIGS. 9 and 10 can be easily manufactured by press molding.

(Problem to be solved by the invention) However, in the conventional IC package and its manufacturing method,
There is a problem in that it becomes difficult to reduce the thickness of the package, especially the first insulator on which the rC chip is mounted. For example, when trying to manufacture an IC for use in IC cards, which have recently been in the spotlight, the card needs to be thinner for portability, so in order to meet this demand, the IC package itself must be made thinner. No.

For this purpose, for example, the thickness of the first insulator constituting the IC chip mounting surface is 0. There is a desire to form it to 5 mm or less. However, it is difficult to meet these requirements using conventional manufacturing methods that utilize press molding.

The present invention has been made in response to the above-mentioned problems.
The object of the present invention is to provide an IC package that can be made thinner and a method for manufacturing the same.

[Structure of the Invention] (Means for Solving the Problem) In order to achieve the above object, the IC package of the present invention has the following features:
It consists of a thin plate-like insulator on which an IC chip is mounted, and a frame-like insulator having a conductive layer fixed to the periphery of the thin plate-like insulator and electrically connected to the electrode pads on the IC chip. This is a characteristic feature.

Further, it is preferable that the thickness d of the thin plate-like insulator portion be set in a relationship such that d≦0.5.

Furthermore, the overall thickness of the thin plate-like insulator part and the frame-like insulator part is D
In this case, it is desirable to set the relationship of d/D≦0.5 and D≦1.5 mm.

Further, the method for manufacturing an IC package of the present invention includes a step of preparing a thin plate-like insulator on which an IC chip is to be mounted, a step of preparing a frame-like insulator having a peripheral shape approximately equal to that of the thin plate-like insulator, This method is characterized by the step of stacking a frame-shaped insulator on the peripheral portion of the frame-shaped insulator and integrating the two.

Furthermore, it is desirable to use ceramic green sheets as the thin plate-like insulator and the frame-like insulator. Furthermore, sintered ceramic can be used as both insulators. Furthermore, the step of integrating both insulators can include heat treatment.

(Function) Since the insulator portion on which the IC chip is mounted is made of a thin plate, the IC package can be made thinner. Moreover, as mentioned above, d≦0. 5mm relationship or d/D
≦0,5 and D≦1. By setting the relationship of 5 nm to 5 nm, the most desirable effect can be obtained.

In addition, when manufacturing an IC package, a thin plate insulator and a frame insulator are prepared separately, and the IC package is manufactured by integrating both insulators, so that a thinner IC package can be produced. It can be easily manufactured. It is desirable to use ceramic green sheets or sintered ceramics as both insulators. Furthermore, it is desirable that the step of integrating both insulators includes heat treatment.

(Example) The present invention will be described in detail below with reference to the drawings.

1 and 2 are a perspective view and a sectional view showing a first embodiment of the IC package of the present invention, and 11 is an IC chip 13.
The thin plate-shaped insulator 12 on which the thin plate-shaped insulator is mounted is a frame-shaped insulator that is integrated with the thin plate-shaped insulator 11 at its peripheral portion, and both of these insulators are made of, for example, ceramic or resin. A conductive layer 16 having a plurality of, for example, six bonding pads, is arranged around the IC chip mounting surface of the thin plate insulator 11.
is formed toward the end face, and a conductive layer 20 is formed in the through hole 19 provided in the thickness direction,
Furthermore, a conductive layer 21 is formed from the bottom surface to the side surfaces. Further, a conductive layer 17 is formed from the surface to the side surface of the frame-shaped insulator 12.

These conductive layers 16, 20, 21.17 are electrically connected to each other. The electrode pads 14 provided on the IC chip 13 are electrically connected to the conductive layer 16 via the bonding wire 15, and therefore the electrode pads 14 are electrically connected to the conductive layer 17. A resin 18 covers the IC chip 13, and is molded into the recess of the frame-shaped insulator 12 to protect the IC chip 13 from the external atmosphere.

Here, the thickness of the thin plate insulator 11 is d, and the thickness of the thin plate insulator 11 is d.
When the overall thickness of the frame-shaped insulator 12 is D, each insulator 11.12 is set to satisfy the relationship d≦0.5 mm, or d/D≦0.5 and D≦1. The most desirable effect can be obtained when the relationship is set to .5 mm. However, when d≦0.2 mm, good effects can be obtained by setting the relationship of d/D≦0.5 and D≦1, 0 mm.

By forming the insulator 11 on which the IC chip 13 is to be mounted thin in this manner, the IC package can be made thinner. Such a thin IC package can be realized by the method of manufacturing an IC package of the present invention as described below.

FIG. 5 shows a first embodiment of the method for manufacturing an IC package of the present invention, and particularly shows the case where the IC package is manufactured using a low-temperature sintering system.

(A) First, a plurality of ceramic green sheets (unsintered ceramic) 12a, 12b, and 12c are prepared, laminated, and then integrated by hot pressing.

Next, the integrated sheet 12' is formed into a frame shape by die punching, and then sintered. As a result, a frame-shaped insulator 12 is formed. A conductive layer 17 is formed on the surface and side surfaces of the frame at desired stages.

Further, a plurality of green sheets are not necessarily required (one green sheet may be used as long as a predetermined thickness can be obtained).

(B) Prepare green sheet 11- and through hole 1
After punching a predetermined number of holes 9, for example, 6, a conductive paste (Ag, Ag-Pd, Au, Cu,
(Pt-based metal, etc.) and hot press. Next, as shown in 81, conductive layers 16 and 20 are printed on the front and back surfaces of the sheet and then sintered.

Alternatively, as in B2, after sintering the sheet, conductive layers 16 and 20 are printed on the front and back surfaces, and then sintering is performed. As a result, a thin plate-like insulator 11 is formed.

(C) Prepare the frame-shaped insulator 12 and the thin plate-shaped insulator 11 formed in each step of (A) and (B), and
After a frame-shaped insulator 12 is stacked on the peripheral portion of the insulator 1 with an adhesive member such as a heat-resistant adhesive or a glass bond interposed therebetween, a heat treatment is performed to integrate the two insulators. The side electrodes are printed with paste and sintered to make them conductive. Next, an IC chip 13 is mounted approximately on the center surface of the thin plate-like insulator 11, wire bonding is performed, and then molding with resin 18 is performed. Through the above steps, an IC package having the structure shown in FIGS. 1 and 2 is obtained.

FIG. 6 shows a second embodiment of the method for manufacturing an IC package of the present invention, and particularly shows the case where the IC package is manufactured using a high temperature sintering system (alumina system).

(A) Since the frame-shaped insulator 12 can be formed by the same method as the step (A) according to the first embodiment, the explanation will be omitted.

(B) In the step (B) according to the first embodiment,
After punching the through holes 19, the sheet 11' is sintered as shown in B1, and then conductive paste (Ag, Ag-Pd, Au, Cu, Pt metal, etc.) is printed on the front and back surfaces of the sheet. A conductive layer 16.20 is then formed. Alternatively, as in B2, after punching through holes 19, a conductive paste h (W, Mo-based metal, etc.) is printed on the front and back surfaces of the sheet to form conductive layers 16 and 20, followed by sintering. As a result, a thin plate-like insulator 11 is formed.

(C) Since the IC package can be obtained by integrating both the insulators 11 and 12 in the same manner as the step (C) according to the first embodiment, the explanation will be omitted.

3 and 4 are a perspective view and a sectional view showing a second embodiment of the IC package of the present invention. A conductive layer 20 is formed by providing a through hole 19 in advance in the thickness direction, and a conductive layer 1 is formed on the surface of the conductive layer 20 so as to be electrically conductive with the conductive layer 20.
The difference is that 7 was formed. Such thin IC
The package can be realized by the method of manufacturing an IC package of the present invention as shown below.

FIG. 7 shows a third embodiment of the method for manufacturing an IC package of the present invention.

(A) Through hole 19a in advance like Al.

19b and 19c are respectively formed and conductive layers 20a and 20a are formed thereon.
For example, three sintered ceramics 2 formed with 0b and 20c
Prepare 2a, 22b, 22c and stack them to form 22
unify it like this. Alternatively, as shown in A2, multiple sintered ceramics are stacked and integrated, then punched to form a through hole 19, and then a conductive layer 2 is formed in the through hole 19.
form 0. As a result, a frame-shaped insulator 12 is formed.

(B) A thin plate-like insulator 11 is formed by printing a conductive layer 16 on the surface of the sintered ceramic.

(C) Prepare the frame-shaped insulator 12 and the thin plate-shaped insulator 11 formed in each step of (A) and (B), and overlap both insulators 11 and 12 with an adhesive member such as glass frit. Sinter and integrate. Next, the C-chip 13 is mounted, wire bonding is performed, and then resin 18 is molded. Through the above steps, an IC package having the structure shown in FIGS. 3 and 4 is obtained.

Moreover, the frame-shaped insulator 1 formed by the above (A) and (B) by laminating conventionally known green sheets.
2 and a sheet corresponding to the thin plate-like insulator 11,
An IC package having the structure shown in FIGS. 3 and 4 can also be obtained by stacking these sheets and sintering them all at once.

As described above, according to the embodiments of the IC package and the manufacturing method thereof of the present invention, it is possible to obtain a thinned IC package, and it is also possible to easily manufacture such a thinned IC package. .

The number of conductive layers and the arrangement pattern shown in this embodiment are merely examples, and various modifications can be made depending on the purpose, use, etc. In addition, the conductive layer is formed through a through hole.
Alternatively, any structure can be selected via the side surface, and a thinned IC package can be obtained in either structure.

Further, in the embodiment, an example was shown in which IC packages were obtained individually, but as shown in FIG. By stacking and integrating the two insulators 12 and 11 and then dividing them into individual pieces using a wire saw or the like, it is possible to easily produce a large number of pieces.

[Effects of the Invention] As described above, according to the present invention, a thin plate-like insulator and a frame-like insulator are prepared separately in advance, and both insulators are integrated.
Since the C package is manufactured, a thinned IC package can be easily obtained.

[Brief explanation of drawings]

1 and 2 are perspective views and sectional views showing a first embodiment of the IC package of the present invention, and FIGS. 3 and 4 are perspective views showing a second embodiment of the IC package of the present invention. 5(A) to 5(C) are process diagrams showing the first embodiment of the method for manufacturing an IC package of the present invention, and FIG. 6(A) is a cross-sectional view.
) to (C) are process diagrams showing a second embodiment of the method for manufacturing an IC package of the present invention, and FIGS. 7(A) to (C) are process diagrams showing a third embodiment of the method for manufacturing an IC package of the present invention. FIG. 8 is a process diagram showing a modified example of the method for manufacturing an IC package of the present invention, and FIGS. 9 and 10 are process diagrams showing a conventional IC package manufacturing method.
A perspective view and a sectional view showing the package, FIGS. 11 and 1
FIG. 2 is a process diagram showing a conventional method for manufacturing an IC package. 1... Thin plate-shaped insulator, 12... Frame-shaped insulator, 3...
・IC chip, 15...bonding wire, 6.1
7.20... Conductive layer, 8... Resin (insulator), 19... Through hole.

Claims (7)

[Claims] (1) A thin plate-like insulator portion on which an IC chip is to be mounted, and a frame-like insulator portion having a conductive layer integrated into the peripheral portion of the thin plate-like insulator portion and electrically connected to the electrode pads on the IC chip. An IC package characterized by comprising: (2) When the thickness of the thin plate insulator portion is d, d≦0.
The IC package according to claim 1, wherein the IC package is set to have a relationship of 5 mm. (3) The IC according to claim 1, wherein the IC is set to have a relationship of d/D≦0.5 and D≦1.5 mm, where D is the overall thickness of the thin plate-like insulator portion and the frame-like insulator portion. package. (4) A step of preparing a thin plate-like insulator on which an IC chip is to be mounted, a step of preparing a frame-like insulator having a peripheral shape approximately equal to that of the thin-plate insulator, and a step of preparing a frame-like insulator having a peripheral shape approximately equal to that of the thin plate-like insulator; 1. A method for manufacturing an IC package, comprising the steps of stacking two insulators and integrating the two. (5) The method for manufacturing an IC package according to claim 4, wherein a ceramic green sheet is used as the thin plate-like insulator and the frame-like insulator. (6) The method for manufacturing an IC package according to claim 4, wherein sintered ceramic is used as the thin plate-like insulator and the frame-like insulator. (7) The method for manufacturing an IC package according to claim 4, wherein the step of integrating the thin plate-like insulator and the frame-like insulator comprises a step including heat treatment.