JPH03235325A - Semiconductor vapor growth device - Google Patents
Semiconductor vapor growth deviceInfo
- Publication number
- JPH03235325A JPH03235325A JP3178590A JP3178590A JPH03235325A JP H03235325 A JPH03235325 A JP H03235325A JP 3178590 A JP3178590 A JP 3178590A JP 3178590 A JP3178590 A JP 3178590A JP H03235325 A JPH03235325 A JP H03235325A
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- semiconductor wafer
- casing
- reaction tube
- resistance heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 239000012495 reaction gas Substances 0.000 claims abstract description 14
- 238000001947 vapour-phase growth Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 3
- 238000009434 installation Methods 0.000 abstract description 9
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 230000006698 induction Effects 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は半導体ウェーハを加熱し半導体ウェーハに気相
成長膜付けを行なう半導体気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor vapor phase growth apparatus for heating a semiconductor wafer and depositing a vapor phase growth film on the semiconductor wafer.
（従来の技術）
従来、半導体ウェーノ＼を反応ガス雰囲中で加熱し、半
導体ウェー７１表面に気相成長膜付けを行なう半導体気
相成長装置として、第５図および第６図に示すものが知
られている。(Prior Art) Conventionally, as a semiconductor vapor phase growth apparatus for heating a semiconductor wafer in a reaction gas atmosphere and depositing a vapor phase growth film on the surface of a semiconductor wafer 71, the one shown in FIGS. 5 and 6 has been used. Are known.
この半導体気相成長装置は、第５図および第６図に示す
ように、石英製反応管３４の内部に配設され上部に半導
体ウェー／Ｘ３１を載置するサセプタ３２を備えている
。また、サセプタ３２内部には、温度測定用の熱電対３
３が設けられている。As shown in FIGS. 5 and 6, this semiconductor vapor phase growth apparatus includes a susceptor 32 that is disposed inside a quartz reaction tube 34 and on which a semiconductor wafer/X31 is placed. Also, inside the susceptor 32, there is a thermocouple 3 for temperature measurement.
3 is provided.
さらに、石英製反応管３４の外周に高周波コイル３５が
巻かれて配置され、この高周波コイル３５は昇降装置３
６を介して誘導管３７ａ１３７ｂに接続されている。さ
らに誘導管３７ａ、３７ｂは安全上室内の天井に敷設さ
れて、高周波発振器３９に接続されている。Furthermore, a high frequency coil 35 is wound around the outer periphery of the quartz reaction tube 34, and this high frequency coil 35 is connected to the lifting device 3.
6 to the guide pipe 37a137b. Further, the guide pipes 37a and 37b are installed on the ceiling of the room for safety reasons and are connected to a high frequency oscillator 39.
このうち、昇降装置３６は、石英製反応管の取付けおよ
び取外しを行なう際、ガイド４２に沿つて上下方向に移
動し、高周波コイル３５を昇降させるものである。また
高周波コイル３５内には冷却水が多量に供給されている
。さらに、天井に敷設された誘導管３７ａ、３７ｂは安
全上、安全カバー３８によって覆われている。Of these, the elevating device 36 moves up and down along the guide 42 and raises and lowers the high frequency coil 35 when attaching and detaching the quartz reaction tube. Further, a large amount of cooling water is supplied into the high frequency coil 35. Further, the guide pipes 37a and 37b installed on the ceiling are covered with a safety cover 38 for safety reasons.
高周波発振器３９は自立型となっており、石英製反応管
３４を内臓した炉体４４とは別体に設けられ、その床面
積は約１ｒｒ１′となっている。また高周波発振器３９
の発振出力は数百ｋｗてあり、内部に素子冷却用配管が
設けられている。さらに高周波発振器３９は高周波使用
であるため、専用の第１種アース工事が施されている。The high frequency oscillator 39 is a self-supporting type, and is provided separately from the furnace body 44 containing the quartz reaction tube 34, and its floor area is about 1rr1'. Also, the high frequency oscillator 39
The oscillation output is several hundred kilowatts, and there is internal piping for cooling the elements. Furthermore, since the high frequency oscillator 39 uses high frequencies, it is provided with a dedicated type 1 grounding work.
なお、石英製反応管３４の上部には、反応ガス導入継手
４１が設けられている。Note that a reaction gas introduction joint 41 is provided at the upper part of the quartz reaction tube 34.
（発明か解決しようとする課題）
上述のように従来の半導体気相成長装置においては、反
応ガス雰囲中で高周波誘導加熱方式により半導体ウェー
ハ３１を加熱し、半導体ウェーハ３１の表面に気相成長
膜を形成している。(Problem to be Solved by the Invention) As described above, in the conventional semiconductor vapor phase growth apparatus, the semiconductor wafer 31 is heated by a high frequency induction heating method in a reactive gas atmosphere, and the surface of the semiconductor wafer 31 is grown in vapor phase. Forms a membrane.
また、その後石英製反応管３４を洗浄する場合は、反応
ガス導入継手４１と、反応ガス導入管（図示せず）との
接続を解き、高周波コイル３５を昇降装置３６によって
上方へ持上げ、続いて石英製反応管３４を炉体４４内か
ら取外している。In addition, when cleaning the quartz reaction tube 34 after that, disconnect the reaction gas introduction joint 41 and the reaction gas introduction tube (not shown), lift the high frequency coil 35 upward by the lifting device 36, and then The quartz reaction tube 34 has been removed from the furnace body 44.
その後、石英製反応管３４を炉体４４内に設置する場合
は、上述とは逆の手順で石英製反応管３４を設置した後
、高周波コイル３５を昇降装置３６によって降下させ、
反応ガス導入継手４１を反応ガス導入管に接続させてい
る。After that, when installing the quartz reaction tube 34 in the furnace body 44, after installing the quartz reaction tube 34 in the reverse procedure to the above, the high frequency coil 35 is lowered by the lifting device 36,
A reaction gas introduction joint 41 is connected to the reaction gas introduction pipe.
しかしながら、高周波コイル３５を昇降させて高価な石
英製反応管３４を設置したり取外したりする作業は、注
意か必要とされる大変な作業である。とりわけ高周波コ
イル３５を、毎回所定位置に正確に配置するのか大変で
ある。例えば、石英製反応管３４内の半導体ウェーハ３
１に対して高周波コイル３５かずれて配置された場合、
半導体ウェーハ３１の加熱温度がばらつくという問題が
ある。However, the work of raising and lowering the high frequency coil 35 to install and remove the expensive quartz reaction tube 34 is a difficult work that requires special care. In particular, it is difficult to accurately place the high frequency coil 35 in a predetermined position every time. For example, the semiconductor wafer 3 inside the quartz reaction tube 34
When the high-frequency coil 35 is arranged with a deviation from 1,
There is a problem that the heating temperature of the semiconductor wafer 31 varies.
また、高周波誘導加熱方式を採用するため次のような問
題が生じている。Furthermore, the following problems arise due to the adoption of the high frequency induction heating method.
すなわち、高周波発振器３９は高価であり、また炉体４
４とは別体に設ける必要があるため、設置スペースか大
きくなってしまう。That is, the high frequency oscillator 39 is expensive, and the furnace body 4
Since it is necessary to install it separately from 4, the installation space becomes large.
また、高周波発振器３つを用いる場合、第１種アース工
事等が必要になるとともに、誘導管３７ａ、３７ｂを安
全カバー３８で覆う必要があるので、設置コストか増加
してしまう。Furthermore, when three high-frequency oscillators are used, first-class grounding work is required, and the guide tubes 37a and 37b must be covered with a safety cover 38, which increases the installation cost.
さらに、高周波発振器３つは電気効率が５０％程度と低
く、また冷却水を多量に流すためランニングコストがか
かるという問題がある。Furthermore, the electrical efficiency of the three high-frequency oscillators is as low as about 50%, and running costs are high because a large amount of cooling water flows through the three high-frequency oscillators.
本発明はこのような点を考慮してなされたものであり、
半導体ウェーハを所望の温度分布で正確に加熱すること
ができるとともに、安価でかつ設置スペースを小さくす
ることができる半導体気相成長装置を提供することを目
的とする。The present invention has been made in consideration of these points,
It is an object of the present invention to provide a semiconductor vapor phase growth apparatus that can accurately heat a semiconductor wafer with a desired temperature distribution, is inexpensive, and can require a small installation space.
（課題を解決するための手段）
本発明は、反応ガスか流れる反応管内に回転自在に配設
された円筒状ケーシングと、このケーシングの上部に取
付けられるとともに半導体ウェーハを載置するサセプタ
と、ケーシング内に配設された円盤状の抵抗発熱体とを
備え、前記抵抗発熱体は対抗する両端部に端子を有する
略うず巻形状となっており、その断面積は半径方向内方
が半径方向外方に向って徐々に小さくなっていることを
特徴とする半導体気相成長装置である。(Means for Solving the Problems) The present invention includes a cylindrical casing rotatably disposed in a reaction tube through which a reaction gas flows, a susceptor attached to the upper part of the casing and on which a semiconductor wafer is placed, and a casing. The resistance heating element has a substantially spiral shape with terminals at opposing ends, and its cross-sectional area is such that the radially inner side is radially outer. This is a semiconductor vapor phase growth apparatus characterized by a structure that gradually becomes smaller toward the front.
（作 用）
反応管内に反応ガスを流しながらケーシングを回転させ
、抵抗発熱体に電力を供給することにより、半導体ウェ
ーハをその温度分布が均一になるよう加熱することかで
きる。(Function) By rotating the casing while flowing a reaction gas into the reaction tube and supplying power to the resistance heating element, it is possible to heat the semiconductor wafer so that its temperature distribution is uniform.
（実施例） 以下、図面を参照に本発明の実施例について説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第１図乃至第４図は本発明による半導体気相成長装置の
一実施例を示す図である。はじめに半導体気相成長装置
の全体について第４図により説明する。1 to 4 are diagrams showing an embodiment of a semiconductor vapor phase growth apparatus according to the present invention. First, the entire semiconductor vapor phase growth apparatus will be explained with reference to FIG.
第４図に示すように、炉体１９内上部にステンレス製反
応管１７が配置されている。また第１図に示すように反
応管１７内に略円筒状のケーシング１５が回転自在に配
設され、ケーシング１５の上部には半導体ウェーハ１０
を装置するサセプタ１６がケーシング１５と同志に取付
けられている。As shown in FIG. 4, a stainless steel reaction tube 17 is arranged in the upper part of the furnace body 19. Further, as shown in FIG. 1, a substantially cylindrical casing 15 is rotatably disposed inside the reaction tube 17, and a semiconductor wafer 10 is placed in the upper part of the casing 15.
A susceptor 16 is attached to the casing 15.
さらにケーシング１５内には、円盤状の抵抗発熱体１３
がケーシング１５と同志に配設されている。Furthermore, inside the casing 15, a disc-shaped resistance heating element 13 is provided.
is arranged coextensive with the casing 15.
また、抵抗発熱体１３の中心部を貫通して、外周に電気
絶縁リング１１が嵌込められた温度測定用の熱電対１２
が設けられ、この熱電対１２の上端部はサセプタ１６の
下端に形成された収納溝１８内に収納されている。Further, a thermocouple 12 for temperature measurement penetrates through the center of the resistance heating element 13 and has an electrically insulating ring 11 fitted around the outer periphery.
The upper end of the thermocouple 12 is housed in a housing groove 18 formed at the lower end of the susceptor 16.
次に抵抗発熱体１３について、第２図および第３図によ
り詳述する。Next, the resistance heating element 13 will be explained in detail with reference to FIGS. 2 and 3.
円盤状の抵抗発熱体１３はタングステン、モリブデン、
またはカーボン等の材料からなっている。The disc-shaped resistance heating element 13 is made of tungsten, molybdenum,
Or made of material such as carbon.
また、第２図にあるように、抵抗発熱体１３は上方の半
円うず巻部１３ａと下方の半円うず巻部１３ｂとからな
り、これらを中央部分で接続して構成されている。Further, as shown in FIG. 2, the resistance heating element 13 consists of an upper semicircular spiral portion 13a and a lower semicircular spiral portion 13b, which are connected at the center.
上方の半円うず巻部１３ａと下方の半円うず巻部１３ｂ
の端部には、互いに対抗する端子１４ａ１１４ｂがそれ
ぞれ設けられている。またこの端子１４ａ、１４ｂは、
炉体１９内の下方に設置された電力供給ユニット（２０
）に接続されている。Upper semicircular spiral portion 13a and lower semicircular spiral portion 13b
Terminals 14a114b opposing each other are provided at the end portions of the terminals 14a and 114b, respectively. Moreover, these terminals 14a and 14b are
A power supply unit (20
)It is connected to the.
半円うず巻部１３ａおよび下方の半円うず巻部１３ｂは
、それぞれ略同−幅で伸びており（第２図参照）、その
厚さＡ、Ｂ、Ｃは半径方向内方から半径方向外方に向け
て徐々に小さくなっている。The semicircular spiral portion 13a and the lower semicircular spiral portion 13b each extend with approximately the same width (see Fig. 2), and their thicknesses A, B, and C vary from radially inward to radially outward. It gradually becomes smaller towards the direction.
すなわち、厚さＡ〉厚さＢ〉厚さＣとなっている。That is, thickness A>thickness B>thickness C.
このため各々の半円うず巻部１３ａ、１３ｂの断面積は
、半径方向外方に向けて徐々に小さくなり、これにとも
なって各半円うず巻部１３ａ、１３ｂの抵抗値は半径方
向外方に向けて徐々に大きくなっている。Therefore, the cross-sectional area of each semicircular spiral portion 13a, 13b gradually decreases in the radial direction outward, and the resistance value of each semicircular spiral portion 13a, 13b decreases radially outward. It is gradually increasing towards.
次にこのような構成からなる本実施例の作用について説
明する。Next, the operation of this embodiment having such a configuration will be explained.
まず、電力供給ユニット２０から端子１４ａ、１４ｂを
介して抵抗発熱体１３に電力が供給される。この状態で
ケーシング１５およびサセプタ１６が回転し、これによ
って半導体ウェーノＸ１０は回転しながら抵抗発熱体１
３によって加熱される。同時に反応管１７内に反応ガス
２１が流され、半導体ウェーハ１０表面に気相成長膜が
形成される。First, power is supplied from the power supply unit 20 to the resistance heating element 13 via the terminals 14a and 14b. In this state, the casing 15 and the susceptor 16 rotate, and as a result, the semiconductor wafer X10 rotates while the resistance heating element 1
Heated by 3. At the same time, a reaction gas 21 is flowed into the reaction tube 17, and a vapor phase growth film is formed on the surface of the semiconductor wafer 10.
この場合、抵抗発熱体１３の各半円うず巻部１３ａ、１
３ｂは、いずれもその抵抗値が半径方向外方に向けて徐
々に大きくなっているので、これに伴い抵抗発熱体１３
の加熱能力は半径方向外方に向けて大きくなる。In this case, each semicircular spiral portion 13a, 1 of the resistance heating element 13
3b, the resistance value gradually increases toward the outside in the radial direction, so that the resistance heating element 13
The heating capacity increases radially outward.
ところで、反応管１７を流れる反応ガスの流速は半径方
向内方より半径方向外方の方が大きくなり、半導体ウェ
ーハ１０はこの反応ガスによって半径方向外方部分が強
く冷却されることになる。Incidentally, the flow velocity of the reaction gas flowing through the reaction tube 17 is greater in the radial direction outward than in the radially inward direction, and the radially outer portion of the semiconductor wafer 10 is strongly cooled by this reaction gas.
この場合、上述のように抵抗発熱体１３の加熱能力は半
径方向外方部分が大きくなるので、半導体ウェー”１０
内の温度分布を半径方向内方から半径方向外方に向けて
均一に維持することができる。In this case, as described above, the heating capacity of the resistance heating element 13 is greater in the radially outward portion, so the semiconductor wafer "10"
The temperature distribution inside can be maintained uniformly from radially inward to radially outward.
以上説明したように本実施例によれば、従来の高周波誘
導加熱方式によらず抵抗発熱体１３によって半導体ウェ
ーハ１０を加熱することができる。As explained above, according to this embodiment, the semiconductor wafer 10 can be heated by the resistance heating element 13 without using the conventional high frequency induction heating method.
二のため反応管の外周に高周波コイルを設ける必要がな
くなるので、反応管の取付は取外し作業を容易に行なう
ことができる。また半導体ウェーハ１０を加熱する抵抗
発熱体１３を反応管１７内に設けたので、反応管１７と
して熱伝導性の高い石英製反応管を用いる必要はなく、
安価で丈夫なステンレス反応管を用いることができる。Second, since it is not necessary to provide a high frequency coil around the outer periphery of the reaction tube, the reaction tube can be easily attached and removed. Furthermore, since the resistance heating element 13 for heating the semiconductor wafer 10 is provided in the reaction tube 17, there is no need to use a quartz reaction tube with high thermal conductivity as the reaction tube 17.
An inexpensive and durable stainless steel reaction tube can be used.
さらに特殊な据付工事を必要とする高周波発振器を用い
ないので、据付工事の簡略化を図ることができるととも
に、設置スペースの削減を図ることができる。Furthermore, since a high frequency oscillator that requires special installation work is not used, the installation work can be simplified and the installation space can be reduced.
また、抵抗発熱体１３の加熱能力を半径方向外方に向け
て大きくすることにより、半導体ウェーハ１０の温度分
布を均一とすることができるので、半導体ウェーハ１０
の表面に気相成長膜を均一に形成することができる。Furthermore, by increasing the heating capacity of the resistance heating element 13 toward the outside in the radial direction, the temperature distribution of the semiconductor wafer 10 can be made uniform.
A vapor-phase growth film can be uniformly formed on the surface of the substrate.
なお、上記実施例において、抵抗発熱体１３として２つ
の半円うず巻部１３ａ、１３ｂをその中央部で接続して
構成したものの例を示したが、これに限らず、例えば所
定の間隔をおいて巻かれた一方のうず巻部と、この一方
のうず巻部間の間隔内に巻かれた他方のうず巻部とを中
央部で接続して構成してもよい。In the above embodiment, the resistive heating element 13 was constructed by connecting two semicircular spiral portions 13a and 13b at their central portions, but the present invention is not limited to this. It may also be configured such that one spirally wound portion is connected to the other spirally wound portion within the interval between the spirally wound portions at the center.
以上説明したように、本発明によれば、抵抗発熱体に電
力を供給することにより、半導体ウェーハをその温度分
布が均一になるよう加熱することかできる。このため、
半導体ウェーハの表面に気相成長膜を均一に形成するこ
とができる。また、従来の高周波誘導加熱方式によらず
、半導体ウェハを加熱することかできるので、高周波コ
イル等を設ける必要はなく、反応管の取付は取外し作業
を容易に行なうことかできる。また、高周波発振器を用
いないので据付工事の削除を図るとともこ、設置スペー
スの削減を図ることができる。As explained above, according to the present invention, by supplying power to the resistance heating element, it is possible to heat the semiconductor wafer so that the temperature distribution thereof is uniform. For this reason,
A vapor phase growth film can be uniformly formed on the surface of a semiconductor wafer. Furthermore, since the semiconductor wafer can be heated without using the conventional high-frequency induction heating method, there is no need to provide a high-frequency coil or the like, and the reaction tube can be easily attached and detached. Furthermore, since no high-frequency oscillator is used, installation work can be eliminated and installation space can be reduced.
２０を内部に収納した炉体を示す斜視図であり、第５図
は従来の半導体気相成長装置の反応管の側断面図であり
、第６図はその全体斜視図である。FIG. 5 is a side sectional view of a reaction tube of a conventional semiconductor vapor phase growth apparatus, and FIG. 6 is an overall perspective view thereof.
１０・・・半導体ウェーハ、１３・・・抵抗発熱体、１
４ａ、１４ｂ・・・端子、１５・・・ケーシング、１６
・・・サセプタ、１７・・・反応管、１９・・・炉体、
２０・・・電力供給源。10... Semiconductor wafer, 13... Resistance heating element, 1
4a, 14b...terminal, 15...casing, 16
... Susceptor, 17... Reaction tube, 19... Furnace body,
20...Power supply source.
Claims (1)
状ケーシングと、このケーシングの上部に取付けられる
とともに半導体ウェーハを載置するサセプタと、ケーシ
ング内に配設された円盤状の抵抗発熱体とを備え、前記
抵抗発熱体は対抗する両端部に端子を有する略うず巻形
状となっており、その断面積は半径方向内方から半径方
向外方に向って徐々に小さくなっていることを特徴とす
る半導体気相成長装置。A cylindrical casing rotatably disposed in a reaction tube through which a reaction gas flows, a susceptor attached to the top of the casing and on which a semiconductor wafer is placed, and a disc-shaped resistance heating element disposed within the casing. The resistive heating element has a substantially spiral shape with terminals at opposing ends, and its cross-sectional area gradually decreases from radially inward to radially outward. Semiconductor vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3178590A JPH03235325A (en) | 1990-02-13 | 1990-02-13 | Semiconductor vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3178590A JPH03235325A (en) | 1990-02-13 | 1990-02-13 | Semiconductor vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03235325A true JPH03235325A (en) | 1991-10-21 |
Family
ID=12340715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3178590A Pending JPH03235325A (en) | 1990-02-13 | 1990-02-13 | Semiconductor vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03235325A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331134A (en) * | 1992-05-21 | 1994-07-19 | Shin-Etsu Chemical Co., Ltd. | Double-layered ceramic heater |
| US5344492A (en) * | 1992-07-23 | 1994-09-06 | Kabushiki Kaisha Toshiba | Vapor growth apparatus for semiconductor devices |
| US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
| US6403925B1 (en) * | 1995-07-10 | 2002-06-11 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| WO2004032187A3 (en) * | 2002-09-19 | 2004-07-01 | Applied Materials Inc | Multi-zone resitive heater |
| JP2010040718A (en) * | 2008-08-04 | 2010-02-18 | Soken Kogyo Kk | Heater, substrate heating apparatus and crystal growth apparatus using them |
-
1990
- 1990-02-13 JP JP3178590A patent/JPH03235325A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331134A (en) * | 1992-05-21 | 1994-07-19 | Shin-Etsu Chemical Co., Ltd. | Double-layered ceramic heater |
| US5344492A (en) * | 1992-07-23 | 1994-09-06 | Kabushiki Kaisha Toshiba | Vapor growth apparatus for semiconductor devices |
| US6403925B1 (en) * | 1995-07-10 | 2002-06-11 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
| WO2004032187A3 (en) * | 2002-09-19 | 2004-07-01 | Applied Materials Inc | Multi-zone resitive heater |
| JP2010040718A (en) * | 2008-08-04 | 2010-02-18 | Soken Kogyo Kk | Heater, substrate heating apparatus and crystal growth apparatus using them |
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