JPH03235319A - Exposure method and its device - Google Patents

Abstract

PURPOSE:To make the exposure with high accuracy and high resolution by illuminating a mask, where a hologram circuit is recorded, by means of an illumination optical system, and projecting and exposing the hologram circuit pattern onto a substrate by a substrate positioning device. CONSTITUTION:When the interference fringe of the circuit pattern recorded in the hologram positioned and placed on a mask holder 2 is illuminated with an illumination system (I) 6, the circuit pattern is exposed and transferred on a substrate 4 by a projecting lens 3. That is, when a laser beam is applied obliquely from above from the illumination system (I) 6 to the mask 1, the diffracted light from the interference fringe image of the circuit pattern recorded in the mask 1 is projected on a substrate 4 positioned by a substrate holder 5 through a projecting lens 3. And the image in the mask 1, even if it includes image distortion, magnification error, or wave front aberration, is regenerated on the substrate 4 by the projecting lens 3, so the circuit pattern with the same accuracy with the mask negative 11 can be exposed and transferred on the large substrate 4.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an exposure method and apparatus suitable for large-area exposure in the manufacturing process of electronic devices such as semiconductors and liquid crystal elements.

[Conventional technology]

Due to its shape, liquid crystal display elements are thinner and smaller than electron tubes (CRTs), and are promising displays for the future. Among liquid crystal display elements, active matrix type thin film transistors (TPT) are becoming mainstream because of their good image quality.

In order to form a TPT, an exposure device with performance comparable to that of a semiconductor device is required, and a projection system using a 1:1 mirror or lens or a proximity system is used.

On the other hand, it is expected that displays as large as CRTs will appear, and in this case various problems will arise in the current exposure apparatuses described above.

With the projection method, the range that can be exposed in one cycle is narrow, so there is always a seam in the screen, and it is difficult to obtain satisfactory values in terms of accuracy and electrical characteristics at the seam, and the throughput is low because it requires split exposure. , and because of its format, it is difficult to reduce the cost of the device.

On the other hand, issues with large-area exposure using the proximity method include manufacturing a large-area high-precision mask, creating a high-precision gap between the mask and the substrate, and reducing pinch errors.

One possible solution to the problems of the current exposure methods described above is a method in which a mask drawn by an electron beam drawing device is enlarged by a projection optical system to expose a large area. An example of this enlarged projection exposure method is JP-A No. 62-12212.
There is No. 6. In this example, a pattern on a mask is enlarged by a projection optical system and transferred onto a substrate, and the projection optical system emits parallel light on the substrate side.

[Problem to be solved by the invention]

The optical system in the enlarged projection exposure method described above is configured to project a pattern as parallel light on the substrate side. A normal reduction projection exposure apparatus for semiconductors also uses parallel light on the wafer side to be projected, and this method is less likely to cause shape errors due to deviations in the focal direction.

However, even if the lenses used in the projection optical system are manufactured with high precision, errors will always occur with respect to the ideal value. Errors include image distortion, magnification error, wavefront aberration, etc., and when enlarged projection is used, the absolute value of the error also increases.

For example, even if a lens with an image distortion of 0.01% is manufactured, the
00mcaO screen, 50μ at the periphery
m, and the alignment accuracy between each layer forming the pattern needs to be one order of magnitude or less higher than the above value. Furthermore, since each lens has different characteristics and cannot be made identical, it is impossible to superimpose patterns using multiple devices.

However, even if image distortion and magnification errors are unique to each lens, if there are no or very small variations, it may be possible to form patterns for all processes using the same device, but the relationship between the device and the product may be Since it is limited, there is a problem that mass productivity is reduced. In addition, when exposing an even larger area by splicing, there is a problem that the spliced parts do not overlap due to distortion.Furthermore, with a lens that produces parallel light on the wafer side that is the projection side, for example, a screen of 5001 m0 When projecting at one time, the lens aperture is φ700 mm or more, and it is necessary to develop a large-diameter, high-precision lens.

On the other hand, if we define the amount of information transmitted as the value obtained by dividing the projection range by the resolving power of the lens, then for the lens of a reduction projection exposure system for semiconductors, φ20++ m10.8μm = 25000, and for the above enlargement projection lens, φ700m + 15μm = 14
0000, and the magnification projection lens is required to have higher performance than the lens of the reduction projection exposure apparatus, which currently has the highest standard of lenses.

In order to solve the above problems, an object of the present invention is to provide an exposure method that uses a projection optical system having a large field of view to accurately transfer and expose a circuit pattern formed on a mask original onto a large-area substrate with high resolution. An object of the present invention is to provide a method and a device thereof.

[Means to solve the problem]

In order to achieve the above object, the present invention illuminates a mask, which is positioned by a mask positioning means and has a hologram circuit pattern recorded thereon, by an illumination optical system, and positions the hologram circuit pattern by a projection optical system. An exposure method and an apparatus thereof, characterized in that projection exposure is carried out on a substrate positioned by a means.

Further, the present invention positions and places a mask original on a substrate positioning means, illuminates a circuit pattern formed on the mask original, passes through a projection optical system as object light, and positions the mask original by the mask positioning means and records the image. a hologram mask creating step of irradiating a target mask and illuminating a reference light onto the mask to form a hologram circuit pattern image, and developing the formed mask to record a hologram circuit pattern on the mask; A mask on which a hologram circuit pattern is recorded in the creation process is positioned by a mask positioning means, the positioned mask is illuminated by an illumination optical system, and the hologram circuit pattern is positioned by a projection optical system by a substrate positioning means. The present invention provides an exposure method and apparatus thereof, characterized by comprising an exposure step of projecting exposure onto a substrate.

In addition, the present invention provides the above exposure method and apparatus for a hologram mask creation process in which a circuit pattern formed on a mask original is formed on a mask by a projection optical system, and a hologram circuit recorded on the mask. The present invention provides an exposure method and an apparatus thereof, characterized in that aberrations of the projection optical system are canceled out during an exposure step of projecting and exposing a pattern onto a substrate using a projection optical system.

Further, the present invention provides the above exposure method and apparatus, characterized in that the projection optical system used in the hologram mask creation step and the exposure step is formed by a projection lens.

The present invention also provides the above exposure method and apparatus, characterized in that the projection lens is formed to enlarge a hologram circuit pattern recorded on a mask and project it onto a substrate. In other words, the projection lens magnifies the hologram circuit pattern on the mask to more than its original size and projects and exposes it onto the substrate, and the hologram circuit pattern is not projected as parallel light (non-telecentric optical system).
The purpose is to perform projection exposure onto the substrate. In addition, the hologram circuit pattern of the mask is transferred and exposed onto the substrate by moving the substrate in the optical axis direction of the projection lens according to the pinch error between the circuit pattern projected on the substrate and the circuit pattern already formed on the substrate. It's because I did it.

[Effect]

The present invention uses a projection optical system (projection optical system) that simultaneously records (creates) a hologram circuit pattern on a mask from a mask original and performs exposure for transferring the hologram circuit pattern recorded on the mask onto a substrate. It is possible to expose a circuit pattern on a large-area substrate without image distortion, accurately in the desired dimensions, and with high resolution without wavefront aberration. be.

In addition, by using the projection lens as a magnifying optical system, a large area can be projected and exposed using a small diameter lens.Furthermore, by using the projection lens as a non-telecenter link type magnifying optical system, the substrate can be placed within the focal depth range of the projection lens. By moving it in the optical axis direction, it is possible to correct the magnification ratio (pitch error of the circuit pattern) and perform transfer exposure.

〔Example〕

The conventional projection exposure method, as shown in FIG. The shape and magnification are not regular.

FIG. 10 shows an example of pincushion distortion, which is a typical error of a projection lens. This image is formed by enlarging the four corners and reducing the central part of each side.

For example, if the lattice pattern of the mask 101 is
03 onto the substrate 104, originally the projection lens 1
If there is no error in 03, the image is projected at a predetermined magnification with no distortion, as shown by the broken line.

However, in reality, pincushion-like errors as shown by the solid line occur, such as magnification errors with different overall sizes and image distortions with different image shapes.

Here, the image distortion in a reduction projection exposure apparatus, which is the highest standard of current projection lenses, is 0.001%, and if the projection field is 20 nu, the magnitude of the distortion is 0.2 μm. This value does not pose a problem when aligning the eyebrows in a pattern with a width of about 1 μm. However, if the target product is a liquid crystal display device that can expose a large area at once, for example,
Assuming the same ratio of image distortion in the projection field of 700I [Ill], the value is 7 μm, and even for products with relatively wide pattern widths such as liquid crystal display devices, the alignment accuracy is higher than the allowable value for the eyebrow alignment, and the product's This means that the characteristics will not be possible. Then, the ratio of image distortion should be reduced as the lens has a larger aperture, but in reality, the ratio increases, and in order to expose a large area at once using a projection method, it is necessary to realize a projection lens with high precision. is the biggest challenge.

The present invention enables the performance of a projection lens, which is the biggest problem in a method for projecting and exposing a large area at one time, to be achieved with a relatively low precision instead of a high precision one.

That is, the present invention will be explained based on the embodiments shown in the drawings. FIG. 1 is a diagram showing the overall configuration of an embodiment of a lens projection type exposure apparatus using a hologram according to the present invention.

Fig. 2 shows the exposure optical system in the apparatus shown in Fig. 1, and Fig. 3 shows the illumination system mainly for forming a hologram mask from the mask original in the exposure optical system shown in Figs. 1 and 2. FIG. 4 is a diagram mainly showing an illumination system for projecting and exposing a circuit pattern formed on a hologram mask onto a substrate in the exposure optical system shown in FIGS. 1 and 2.

First, a method for creating the hologram mask 1 will be explained. That is, in order to record a circuit pattern to be transferred to the hologram mask 1, a recording illumination system (■) 8 and a mask original plate 11 are used as shown in FIGS. 1, 2, and 3.

The mask holder 2 positions and holds the hologram mask 1. The chuck 5 is used to position and place the substrate 4 on which the circuit pattern is exposed and transferred, and also to position and place the mask original 11 thereon. The projection lens 3 projects a circuit pattern such as an electronic circuit recorded on the hologram mask 1 and back-projects the circuit pattern formed on the mask original 11. The illumination system (■) 8 is, for example, a He-Cd laser (441 nm).
, laser light (beam) such as XeF laser (351 nm)
A laser light source 7 that outputs a laser beam, and a branching optical element 31 such as a half mirror that branches a laser beam from the laser light source 7.
and a magnifying optical system 34 consisting of a lens 32 and a circular (rotationally symmetrical) parabolic mirror 33 to magnify the laser beam branched by the branching optical element 31 into parallel light, which is positioned on the chuck 5. an optical path (i) 9 for illuminating the placed mask original 11 to produce object light; and an enlarging optical system consisting of a lens 35 and a lens 36 for enlarging the laser beam branched by the branching optical element 31 into parallel light. 37
and an optical path (ii) 10 which is further provided with a mirror 38 and illuminates the hologram mask 1 made of a photosensitive material from obliquely downward to serve as a reference light. In addition,
The optical axis of the optical path (ii) 10 is made to coincide with the optical axis of the final optical path (luminous flux reflected by the mirror 39) that illuminates the hologram mask 1 of the illumination system (■) 6, and the recorded interference fringes of the hologram mask 1 are aligned. The diffracted light from the image is made to travel at the same angle with respect to the optical axis of the projection lens 3. Here, first, the mask original 11 is set at a height equivalent to the substrate surface position on the chuck 5. That is, the height of the surface of the mask original 11 is detected by a height detection means (specifically formed by an air micro or optical detection means, etc.) 43 that detects the height of the surface of the mask original 11, and the height of the surface of the mask original 11 is detected. The signal is input to the computer 18 via the interface 17, and the computer 18 activates the drive system 19 to move the chuck 5 in the Z direction so that this height becomes the reference height, and the surface of the mask original 11 is moved. Position at the standard height. Furthermore, if it is necessary to adjust the inclination of the mask original 11, the drive system 19 controls the surface of the mask original 11 so that it is not inclined with respect to the projection lens 3. Furthermore, the alignment pattern (not shown) formed on the hologram mask 1 is examined using a microscope 4.
A signal obtained by observing the image W1 by 4 is input to the computer 18 via the interface 17, and the computer 18 uses the drive system 45 to position the alignment pattern at the reference position of the microscope 44 based on the signal. The mask holder 2 is moved slightly in the X-Y direction to position the hologram mask 1 at the reference position. In this state, a laser beam is illuminated onto the mask original 11 from below through the optical path (i) 9, and a hologram mouse 1 made of a photosensitive material in an image forming relationship is formed on the mask original 11 through the projection lens 3. The image of the circuit pattern thus created is projected as object light. At the same time, a laser beam is irradiated as a reference beam from diagonally below the hologram mask 1 through the optical path (ii) 10 to form an interference fringe image on the hologram mask 1 formed of a photosensitive material. Thereafter, the hologram mask 1 on which the interference fringe image has been formed is removed from the mask holder 2, and developed to record an interference fringe image in accordance with the circuit pattern formed on the mask original 11 on the hologram mask 1. This recorded interference fringe image includes wavefront aberrations (astigmatism, aberration, coma, two spherical aberrations, etc.) of the projection lens 3. In addition, if the interference fringe image can be developed by electric field, heating, etc.
It is not necessarily necessary to remove the hologram mask 1.

Next, the mask original 11 is removed from the chuck 5.

Then, the hologram mask 1 on which the interference fringe image of the circuit pattern is recorded is placed on the mask holder 2. Then, the image of the alignment pattern formed on the hologram mask 1 is captured using a microscope 44. input the obtained signal to the computer 18 via the interface 17,
Based on the signal, the computer 18 controls the drive system 4 so that the alignment pattern is positioned at the reference position of the microscope 44.
5, the mask holder 2 is slightly moved in the X-Y direction to position the hologram mask 1 at the reference position. Thereby, the hologram mask 1 is positioned and placed at the same position where the interference fringe image of the circuit pattern is recorded. Thereafter, the substrate 4 coated with the resist to be exposed is positioned and placed on the chuck 5. Further, the height detection means 43 detects the height of the surface of the substrate 4, and inputs the signal to the computer 18 via the interface 17, and the computer 18 detects the height of the surface of the substrate 4. The drive system 19 is driven to move the chuck 5 in the Z direction so as to reach the reference height, and the surface of the substrate 4 is positioned at the reference height, and the drive system 19 moves the surface of the substrate 4 to the projection lens 3. control so that there is no inclination.

Next, as shown in FIGS. 1, 2, and 4, a laser beam is irradiated obliquely from above by the illumination system (I) 6 onto the hologram mask 1 on which the circuit pattern is recorded as an interference fringe image, and the image is projected. The substrate 4 is exposed through the lens 3. These configurations will be explained next. That is, the illumination system (I) 6 is emitted from the laser light source 7 and is connected to the branching optical element 3.
A branching optical element 40 such as a half mirror that further branches the laser beam branched by 1 and expanded by the expansion optical system 34, and mirrors 41 and 42 that reflect the laser beam branched by the branching optical element 40. The laser beam reflected by the mirror 42 is reflected from diagonally above the positioned hologram mask 1 so as to illuminate the hologram mask 1 with the same optical axis as the optical axis of the optical path (i) 10 (reference light). It is composed of a mirror 39. The illumination system (I) 6 includes a shutter 20 connected to a rotary actuator 21, for example, in order to freely transmit and block the laser beam to the circuit pattern portion of the hologram mask 1.
has been established. Furthermore, since it is necessary to expose a new circuit pattern on the substrate in alignment with the circuit pattern already formed on the substrate, the detection optical system 15ν allows the substrate 4 placed on the chuck 5 and the hologram mask 1 to be exposed. It is necessary to perform relative positioning. This detection optical system 15
The alignment will be explained in detail later.

Note that the hologram mask 1 and the substrate 4 placed on the chuck 5 are in an imaging relationship via the projection lens 3.

Therefore, when the interference fringe image of the circuit pattern recorded on the hologram mask 1 positioned and mounted on the mask holder 2 is illuminated by the illumination system (I) 6, the circuit pattern is exposed onto the substrate 4 by the projection lens 3. transcribed. That is, when a laser beam is irradiated from the illumination system (I) 6 onto the hologram mask 1 from diagonally above, diffracted light from the interference fringe image of the circuit pattern recorded on the hologram mask 1 is transmitted to the projection lens 3.
The image is projected and formed onto the substrate 4 coated with resist through the projection lens 3, but when it passes through the projection lens 3, the wavefront aberration is corrected and an optical image of a circuit pattern having the exact same shape as the mask original 11 is formed on the substrate 4. is formed. If the laser light source 7, which is the illumination light source, is one that emits light with a wavelength to which the resist coated on the substrate is sensitive, it is possible to form a circuit pattern on the substrate with the same shape as the circuit pattern formed on the mask original 11. Can be baked. As the laser light that reacts with the resist, for example, He-Cd laser light (441 nm
), XeF laser light (351 nm), etc. can be considered.

In this way, in order to realize an exposure apparatus using holograms, it is necessary to have a function for creating the hologram mask 1 shown in FIG.
Since the reproducing function of the hologram mask 1 shown in FIG. 4 is required, it is necessary to configure it as shown in FIGS. 1 and 2. Here, the illumination system (I) 6 and the illumination system (■) 8 do not necessarily need to use laser beams from the same laser light source 7. However, lighting system (I) 6 and lighting system (■)
By using the same laser light source 7 with a branched optical path, the illumination lights can interfere with each other to form an interference fringe image, and the configuration of the illumination system can be simplified.

Further, since the chuck 5 illuminates the mask original 11 from below through the optical path (i) 9, the circuit pattern portion is left open.

By the method described above, the image formed on the hologram mask 1 by the projection lens 3 may contain image distortion, magnification error, wavefront aberration (astigmatism, coma aberration, spherical aberration, etc.), but the same projection lens 3 Since it is reproduced on the board 4 by
Regarding the relative positioning method with respect to the circuit pattern formed in the previous process on the first substrate 4, which can expose and transfer a circuit pattern with the same precision as the mask original 11 onto a large area (for example, 2oO1m0) substrate 4. This will be explained based on FIG. That is, detection optical systems 15 for detecting relative displacement between the hologram mask 1 and the substrate 4 are provided at two locations,
After inputting the optical images of the alignment marks 22 and 23 between the inspected hologram mask 1 and the substrate 4 as bright/dark level signals by the photoelectric conversion means, it is connected to the computer 18 via, for example, the A/D converter 16 and the interface 17. Calculate position. On the other hand, the chuck 5 is also connected to a computer 18 via a drive system 19 and an interface 17. Further, the optical path (I) 6 is provided with a shutter 20 that transmits and blocks the laser beam from the circuit pattern portion of the hologram mask 1 of the illumination system (I) 6. freely. Here, the detection optical system 15 is installed at a location where it does not block the light beam of the projection lens (■) 3.

FIG. 5 shows an example of alignment marks for relative alignment between the hologram mask 1 and the substrate 4. As shown in FIG. 6(a), alignment marks (four-digit marks) 22 are arranged on the hologram mask 1 at at least two locations. This alignment mark 22 is recorded as an interference fringe image (hologram) by illuminating the alignment mark formed on the mask original 11 with the illumination system (■) 8 in the same way as recording on the hologram mask 1 of the circuit pattern. put. As shown in FIG. 6(b), alignment marks (cross marks) 23 are also arranged at at least two locations on the substrate 4 at the same pitch (distance) as the alignment mark 22. As shown in FIG. 6(c), when the hologram mask 1 and the substrate 4 are not aligned, the alignment mark 23 of the substrate 4 is not at the center position with respect to the alignment mark 22 of the hologram mask 1. In addition, alignment mark 22.23
A case will be described in which a laser beam from the illumination system (■) 6 is used as the illumination light for detecting. That is, it is clear that when aligning the two, it is necessary to shield the area other than the alignment mark placement location, and to illuminate the entire surface of the hologram mask 1 when exposing and transferring the circuit pattern recorded as a hologram on the hologram mask 1 onto the substrate. be.

Therefore, in the above state, as shown in FIG. 6, the illumination system (
I) Blocking the laser beam to the circuit pattern portion of the hologram mask 1 in 6. That is, in order to illuminate the alignment marks 22 and 23 without exposing the circuit pattern portion,
A hole 46 that allows laser illumination light to pass through a part of the shutter 20
It is perforated. As a result, when the alignment mark 22 of the hologram mask 1 is illuminated, the diffracted light is transmitted to the projection lens 3.
is projected onto the alignment mark 23 on the substrate 4 through the image.

The detection optical systems 15 each have a projection lens 3 on the substrate 4.
The optical image of the alignment mark 22 of the hologram mask 1 and the alignment mark 23 on the substrate 4 projected by
The optical image of both alignment marks is captured and converted into a video signal, and the video signal is converted into a digital signal by, for example, an A/D converter 16. This digital signal is inputted to the computer 18 via the interface 17, and the two alignment marks are The computer 18 calculates the amount of positional deviation, outputs a drive signal to the active system 19 via the interface 17, and moves the chuck 5 slightly in the X and Y directions to eliminate the positional deviation of the hologram mask 1. The substrate 4 is aligned based on. And when both are aligned, the sixth
As shown in Figure (d), the alignment mark 2 of the substrate 4 is aligned with the alignment mark 22 of the hologram mask 1.
3 is in the center. Note that the pitch (distance) of each of the alignment patterns 22 and 23 is assumed to be d. Furthermore, as described above, the hologram mask 1 and the substrate 4 are not necessarily
There is no need to align them. That is, when the hologram mask 1 to be exposed is placed on the mask holder 2, if the position of the hologram mask 1 is detected and the reference position is determined, the alignment mark 23 formed on the substrate 4 is located at this reference position. It is clear that it is only necessary to align the .

Furthermore, although the detection optical system 15 was installed above the substrate 4,
It is clear that it is also possible to place it below the substrate 4 and optically detect the alignment pan on the substrate.

Next, a method and apparatus capable of exposing a larger area than the embodiments shown in FIGS. 1 to 4 will be described with reference to FIG. 8. It should be noted that the apparatus configuration shown has the functions of both creating the hologram mask 1 and transferring and exposing the circuit pattern. In this embodiment, an enlarged projection lens (1) 13, which is an enlarged system, is used as the projection lens 3.

This magnifying projection lens (1) 13 is a telecentric optical system that produces parallel light on the substrate side.
The aperture will be larger than the projection field.

Therefore, the mask original 11 which has been made large in advance is placed on the chuck 5, and the enlarged projection lens (1) 13 is illuminated by the optical path (i) 9 of the illumination system (■) 8 as in the previous embodiment.
The object light reduced in step is applied onto the hologram mask 1, while the reference light is applied onto the hologram mask 1 through the optical path (ii) 10 of the illumination system (■) 8 to print an interference fringe image on the hologram mask 1. By developing this hologram mask 1, a circuit pattern consisting of a hologram is formed on the hologram mask 1. Then, the hologram mask 1 on which a hologram circuit pattern is formed is placed on the mask holder 2 and positioned in the same way as in the previous embodiment, and the substrate 4 to be exposed is placed on the chuck 5 so as to be relative to the hologram mask 1. position the lighting system (
The circuit pattern recorded on the hologram mask 1 by the illumination from I) 6 can be enlarged and projected onto the substrate 4 by the enlarged projection lens (1) 13 for exposure. In this way, by using the magnifying projection lens (1) 13, even if the hologram mask 1 is small, it is possible to expose a large area to the substrate 4, which makes it possible to realize compactness (simplification) of the device configuration and also to make the hologram mask 1 more compact. Handling becomes easier and operability can also be improved. Note that, as explained above, the mask original 11 is larger than the hologram mask 1 at the same magnification as the magnification determined by the magnifying projection lens (1) 13.

Further, another embodiment of the present invention different from that shown in FIG. 8 is shown in FIG. That is, the magnifying projection lens (If) 14 shown in FIG.
This is a non-telecentric optical system in which the light beam is spread out on the substrate side instead of being parallel. A feature of this embodiment is that the aperture of the magnifying projection lens (n) 14 can be made smaller than the projection field, making it easier to manufacture the projection lens. Another effect of using a non-telecentric optical system is that it is possible to correct a long dimension error called a pitch error between the hologram mask 1 and the substrate 4, which largely appears due to temperature changes and the like.

FIG. 10 shows an example of the correction. Magnifying projection lens (II)
Since the light flux from 14 spreads toward the substrate, in order to enlarge the transferred circuit pattern transferred to the substrate 4, the substrate 4 may be moved downward together with the chuck 5. On the other hand, in order to reduce the size of the transferred circuit pattern transferred onto the substrate 4, the substrate 4 may be moved upward together with the chuck 5. In this way, with a non-telesend link optical system, even if there is a pitch error, it is possible to match the circuit pattern exposed and transferred in the next step with the circuit pattern exposed and transferred in the previous step. However, this method of changing the pitch of the circuit pattern to be exposed by moving the substrate 4 in the optical axis direction of the magnifying projection lens (II) 14 must be performed within the focal depth of the magnifying projection lens (n) 14. In the above embodiment, when creating a hologram circuit pattern on the hologram mask 1, the mask original 11
It is possible to divide the circuit pattern formed by illuminating the circuit pattern and print the interference fringe image separately. It is also possible to step and repeat the chuck 5 to repeatedly expose and transfer the same circuit pattern onto one substrate 4.

Although the hologram mask making device and the exposure device are integrally formed as shown in FIGS. 1 and 2, the hologram mask making device shown in FIG. 3 is a dedicated machine, and the exposure device shown in FIG. It is clear that a separate device may be provided and the substrate may be exclusively exposed using this exposure device. In that case, 1. It is necessary to match the illumination optical axes in both devices, and it is also necessary to match the wavefront aberrations (astigmatism, coma aberration, spherical aberration, etc.) of the projection lens 3. .

〔Effect of the invention〕

As explained above, according to the present invention, a large-area, high-precision device such as a active matrix type liquid crystal display element can be manufactured with high throughput using a projection optical system (for example, a projection lens) with a high field of view. Exposure can be performed with high precision and high resolution. Furthermore, according to the present invention, by using a hologram dry plate copied from a mask original plate as a mask, it is easy to reproduce the mask or produce multiple masks, and handling of the mask in practical use is relatively easier than using a mask original plate. It has the effect of becoming

Furthermore, according to the present invention, by making the projection lens a magnifying type, it becomes possible to support a device with an even larger area, and by making the projection lens a non-telecenter link type, the lens aperture can be made smaller than the projection field. In addition, it becomes possible to move the substrate in the optical axis direction to correct the pitch error between the mask and the substrate, which can contribute to improving the yield of products. Furthermore, by using a magnification system, the hologram dry plate serving as a mask can be made smaller than the substrate on which the pattern is projected, making it possible to make the apparatus more compact and making it easier to handle the mask.

Since the relative positional relationship between the mask pattern and the substrate pattern is determined using exposure illumination light through the projection lens, there is no need to consider chromatic aberration of the projection lens, and highly accurate relative positioning is possible.

[Brief explanation of drawings]

FIG. 1 is an overall configuration diagram showing an embodiment of the exposure apparatus of the present invention, FIG. 2 is a configuration diagram shown in FIG. 1 excluding the relationship of alignment means, and FIG. 3 is a hologram mask according to the present invention. FIG. 4 is a block diagram showing one embodiment of the creating means, FIG. 4 is a block diagram showing one embodiment of the exposure means according to the present invention, and FIG.
6 and 7 are diagrams showing the relationship between the shutters shown in FIG. 1, and FIG.
9 is a configuration diagram showing an embodiment of the exposure apparatus shown in FIGS. 1 and 2 using an enlarged projection lens configured with a telecentric optical system as the projection lens. FIG. FIG. 10 is a perspective view for explaining the pitch error correction method in the apparatus configuration shown in FIG. 9. , FIG. 11 is a diagram for explaining the present invention in detail. Explanation of symbols 1 Hologram mask, 3, 14... Projection lens 4.
...Substrate, 6.Illumination system (1), 7.Laser, 8.
...Illumination system (II), 11...Mask original plate, 15...
・Detection optical system, 18...Shutter, 20.21...Alignment mark. Figure 1 Figure 2 '7:72 JP! Condolence 3 Fuka (α) Also, the 9th ox and the 9th pole, and the 3rd and the 0th circle.

Claims (1)

[Claims] 1. A mask positioned by the mask positioning means and on which a hologram circuit pattern is recorded is illuminated by an illumination optical system, and the hologram circuit pattern is positioned by the substrate positioning means by the projection optical system. An exposure method characterized by projection exposure onto a substrate. 2. The exposure method according to claim 1, wherein the projection optical system is formed by a projection lens. 3. The exposure method according to claim 1, wherein the projection lens is formed to enlarge a hologram circuit pattern recorded on a mask and project it onto the substrate. 4. Position and place the mask original on the substrate positioning means, illuminate the circuit pattern formed on the mask original, and pass it through the projection optical system as object light onto the mask that is positioned by the mask positioning means and to be recorded. irradiating the mask with reference light to form a hologram circuit pattern image, and developing the formed mask to record the hologram circuit pattern on the mask; A mask on which a hologram circuit pattern has been recorded is positioned by a mask positioning means, an illumination optical system illuminates the positioned mask, and a projection optical system projects the hologram circuit pattern onto a substrate positioned by a substrate positioning means. An exposure method characterized by comprising an exposure step of projection exposure. 5. During the hologram mask creation process, in which the circuit pattern formed on the mask master plate is used to form a hologram circuit pattern on the mask using a projection optical system, and the hologram circuit pattern recorded on the mask is projected onto the substrate using the projection optical system. 5. The exposure method according to claim 4, wherein aberrations of the projection optical system are canceled out during the exposure step. 6. The exposure method according to claim 4, wherein the projection optical system used in the hologram mask creation step and the exposure step is formed by a projection lens. 7. The exposure method according to claim 6, wherein the projection lens is formed to enlarge a hologram circuit pattern recorded on a mask and project it onto the substrate. 8. Mask positioning means for positioning a mask on which a hologram circuit pattern is recorded; an illumination optical system for illuminating the mask positioned by the mask positioning means; a substrate positioning means for positioning a substrate; and the illumination optical system. 1. An exposure apparatus comprising: a projection optical system for projecting and exposing a hologram circuit pattern illuminated by the holographic circuit pattern onto a substrate positioned by the substrate positioning means. 9. The exposure apparatus according to claim 8, wherein the projection optical system is formed by a projection lens. 10. The exposure apparatus according to claim 9, wherein the projection lens is formed to enlarge a hologram circuit pattern recorded on a mask and project it onto the substrate. 11. A mask original is positioned and placed on the substrate positioning means, and the circuit pattern formed on the mask original is illuminated and passed through a projection optical system as object light, which is then positioned by the mask positioning means. and hologram mask creating means for irradiating the mask to be recorded and illuminating the reference light onto the mask to form a hologram circuit pattern image, and developing the formed mask to record the hologram circuit pattern on the mask; A mask on which a hologram circuit pattern has been recorded by the hologram mask creating means is positioned by a mask positioning means, the illumination optical system illuminates the positioned mask, the hologram circuit pattern is recorded by a projection optical system, and the hologram circuit pattern is recorded by a substrate positioning means. 1. An exposure apparatus comprising: exposure means for projecting exposure onto a positioned substrate. 12. The exposure apparatus according to claim 11, wherein the projection optical systems of the hologram mask creation means and the exposure means are both formed by projection lenses. 13. The exposure apparatus according to claim 12, wherein the projection lens is formed to enlarge a hologram circuit pattern recorded on a mask and project it onto the substrate. 14. The exposure apparatus according to claim 12, wherein the projection optical system of the hologram mask creation means and the projection optical system of the exposure means have the same wavefront aberration. 15. When the hologram mask creating means forms a hologram circuit pattern on the mask using a projection optical system from the circuit pattern formed on the mask original, and when the exposure means uses the hologram circuit pattern recorded on the mask using the projection optical system. 15. The exposure apparatus according to claim 14, wherein the exposure apparatus is formed so as to cancel out aberrations of the projection optical system when performing projection exposure on the substrate. 16. The projection optical system, substrate positioning means, and mask positioning means of the hologram mask creating means and the projection optical system, substrate positioning means, and mask positioning means of the exposure means are configured to be the same, and the hologram mask creating means and 12. The exposure apparatus according to claim 11, wherein said exposure means is integrally formed. 17. The exposure apparatus according to claim 16, wherein the projection optical systems of the hologram mask creation means and the exposure means are both formed by projection lenses. 18. The exposure apparatus according to claim 17, wherein the projection lens is formed to enlarge a hologram circuit pattern recorded on a mask and project it onto the substrate. 19. When the hologram mask creating means forms a hologram circuit pattern on the mask using a projection optical system from the circuit pattern formed on the mask original, and when the exposure means uses the hologram circuit pattern recorded on the mask using the projection optical system. 18. The exposure apparatus according to claim 17, wherein the exposure apparatus is formed so as to cancel out aberrations of the projection optical system when performing projection exposure on the substrate.