JPH0323510A - Production of thin-film magnetic head - Google Patents
Production of thin-film magnetic headInfo
- Publication number
- JPH0323510A JPH0323510A JP15739589A JP15739589A JPH0323510A JP H0323510 A JPH0323510 A JP H0323510A JP 15739589 A JP15739589 A JP 15739589A JP 15739589 A JP15739589 A JP 15739589A JP H0323510 A JPH0323510 A JP H0323510A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- protective
- magnetic
- soln
- protective plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 45
- 239000010409 thin film Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims abstract description 36
- 230000001681 protective effect Effects 0.000 claims abstract description 25
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000000696 magnetic material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- -1 silicon alkoxide Chemical class 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 230000007062 hydrolysis Effects 0.000 abstract description 5
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 230000016615 flocculation Effects 0.000 abstract 1
- 238000005189 flocculation Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 6
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 101100481408 Danio rerio tie2 gene Proteins 0.000 description 2
- 101100481410 Mus musculus Tek gene Proteins 0.000 description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
本発明は高密度の記録あるいは再生に好適な薄膜磁気ヘ
ッドの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method of manufacturing a thin film magnetic head suitable for high-density recording or reproduction.
{口}従来の技術
従来、この種の薄膜磁気ヘッドとしては、例えば特開昭
62−46416号公報(011[35...・31)
等に開示されているものがある。{Explanation} Conventional technology Conventionally, this type of thin film magnetic head has been disclosed in, for example, Japanese Patent Application Laid-Open No. 62-46416 (011 [35...31).
There are some things disclosed in .
第9図は薄M磁気ヘッドの要部断面図、第10図は薄膜
磁気ヘッドの媒体慴接面を示す目である。FIG. 9 is a sectional view of a main part of a thin M magnetic head, and FIG. 10 is a diagram showing a surface of the thin film magnetic head that contacts the medium.
従来の薄膜磁気ヘッドは第9図及び第101!に示すよ
うにNi−Znフエライ1・等の磁性材fl J’)る
いは結晶化ガラス等の非磁性材料よりなる基板(1)上
に、センダスト算の強磁性金属材料よりなる下部磁性層
(2)、Cu等の導電N料よりなるスバイラル状の導体
コイル層(3)、該導体コイル層(3)を覆うSiOz
等の非磁性絶縁材料からなる層間絶縁層(4)、Si0
2等の非磁性材料からなる磁気ギャップ部形成用のギヤ
ップスベーサ(5)、センダスト等のli!lirij
i性金属材料よりなる上部磁性層(6)及びSiOz等
の非磁性材料よりなる保護層(7)が被着形威されてお
り、該保護層(7)LにはB a T i O i等の
非磁性材料よりなる保護板{8}が低融点ガラス(9)
により接合固定されている。Conventional thin film magnetic heads are shown in FIGS. 9 and 101! As shown in Fig. 1, a lower magnetic layer (1) made of a ferromagnetic metal material calculated by Sendust is formed on a substrate (1) made of a magnetic material such as Ni-Zn ferrite 1 or a non-magnetic material such as crystallized glass. 2), a spiral conductor coil layer (3) made of conductive N material such as Cu, and SiOz covering the conductor coil layer (3).
An interlayer insulating layer (4) made of a non-magnetic insulating material such as Si0
A gap baser (5) for forming a magnetic gap made of a non-magnetic material such as No. 2, li! such as Sendust, etc. lirij
An upper magnetic layer (6) made of an i-type metal material and a protective layer (7) made of a non-magnetic material such as SiOz are deposited, and the protective layer (7) L contains B a T i O i The protective plate {8} is made of a non-magnetic material such as low melting point glass (9)
It is bonded and fixed by.
しかし,乍ら、上記従来の薄膜磁気ヘッドの場合、低融
点ガラス(9)の厚みが30μm程度必要であるため、
媒体摺接面には硬度が前記基板(1)や前記保護板(8
)に比べて小さい低融点ガラス(9)が大幅に露出し、
長時間の媒体との摺接により前記低融点ガラス(9)が
摩耗して陥没が生じ、磁気媒体との当りが悪化し良好な
記録再生を行うことが出来ないという問題が生じる.
また、特開昭63−251908号公報(Gl1 [{
5 .../ 3 1 )に示されているようにシリ
カゾルを磁気ヘッド構成部材の接合すべき面に塗布し、
該塗布面に保護板を加圧した状態で加熱することにより
前記磁気へッド楕或部村上に前記保護板を接合固定する
方法がある.このシリカゾルを用いた接合方法では,接
合Jf1表面のOH基と被接合材k面に吸着しているO
H基とが加水分解してS i−0−A+H20 (Aは
被接合材の原子〉となることにより接合が行われ、OH
基が重要である.しかし乍ら、上記公報の接合方法では
、シリカゾル中のOH基は加水分解により減少するため
保護板を強固に接合固定することが出来ない。However, in the case of the above conventional thin film magnetic head, the thickness of the low melting point glass (9) is required to be about 30 μm;
The hardness of the medium sliding contact surface is the same as that of the substrate (1) and the protection plate (8).
), the low melting point glass (9), which is smaller than that of
Due to long-term sliding contact with the medium, the low melting point glass (9) wears down and becomes depressed, resulting in poor contact with the magnetic medium and the problem that good recording and reproduction cannot be performed. Also, Japanese Patent Application Laid-Open No. 63-251908 (Gl1 [{
5. .. .. / 3 1), apply silica sol to the surface of the magnetic head component to be bonded,
There is a method of bonding and fixing the protective plate to the magnetic head ellipse or Murakami by heating the protective plate while pressurizing the coated surface. In this bonding method using silica sol, the OH groups on the surface of the bonding Jf1 and the O adsorbed on the k surface of the material to be bonded are
Bonding is performed by hydrolyzing the H group to form Si-0-A+H20 (A is an atom of the material to be bonded), and OH
The basis is important. However, with the bonding method disclosed in the above-mentioned publication, the OH groups in the silica sol are reduced by hydrolysis, and therefore the protective plate cannot be firmly bonded and fixed.
(ハ) 発明が解決しようとする課題
本発明は上記従来例の欠点に鑑み為されたものであり、
磁気ヘッド構成部材上に保護板を強固に接合することが
出来、且つ該接合層の摩耗により生じるスベーシングロ
スによって記録、再生特性が劣化するのを防止した薄膜
磁気ヘッドの製造方法を提供することを目的とするもの
である。(c) Problems to be solved by the invention The present invention has been made in view of the drawbacks of the above-mentioned conventional examples.
An object of the present invention is to provide a method for manufacturing a thin-film magnetic head that can firmly bond a protective plate to a magnetic head component and prevent recording and reproducing characteristics from deteriorating due to spacing loss caused by wear of the bonding layer. That is.
(二)課題を解決するための手段
本発明の薄膜磁気ヘッドの製造方法は,基板上に下部磁
性層、導体コイル層、該導体コイル層を覆う層間絶縁層
、磁気ギャップ部及び上部磁性層よりなるヘッド素子を
被着形成し、該ヘッド素子上に非磁性絶縁材料より成り
上面が平坦でiP)る保護層を被着形成した後,前記保
護層の上面と非磁性材料よりなる保護板との間にOH基
を含有する金属有機化合物の溶液を浸透させ、該溶液を
加熱することにより固化させ前記保護層上に前記保護板
を接合固定することを特徴とする。(2) Means for Solving the Problems The method for manufacturing a thin film magnetic head of the present invention includes forming a lower magnetic layer, a conductive coil layer, an interlayer insulating layer covering the conductive coil layer, a magnetic gap portion, and an upper magnetic layer on a substrate. After forming a protective layer made of a non-magnetic insulating material and having a flat top surface on the head element, the top surface of the protective layer and a protective plate made of a non-magnetic material are formed. The protective plate is bonded and fixed onto the protective layer by infiltrating a solution of a metal organic compound containing an OH group during the process and solidifying the solution by heating.
{ホ}作 用
上記製造方法に依れば、ヘッド素子上に保護板を接合固
定するための接合層である非磁性酸化物層を薄く形成す
ることが出来、しかも前記非磁性酸化物l彌を形或する
ための出発溶液である金属有機化合物の溶液には、予め
O H基が含有されているため、前記接合固定に重要で
あるOH基が加水分解により滅少して接合力が低下する
のを防止することが出来る。{E} Effect: According to the above manufacturing method, it is possible to form a thin non-magnetic oxide layer, which is a bonding layer for bonding and fixing the protective plate on the head element, and the non-magnetic oxide layer is thin. Since the metal-organic compound solution that is the starting solution for forming the bond contains OH groups in advance, the OH groups, which are important for fixing the bond, are diminished by hydrolysis and the bonding strength decreases. can be prevented.
(へ)実施例
以下、図面を参照しつつ本発明の薄膜磁気ヘッドの製造
方法の一実施例について詳細に説明する。(F) Example Hereinafter, an example of the method for manufacturing a thin film magnetic head of the present invention will be described in detail with reference to the drawings.
第3図〜第6図は本実施例の薄膜磁気ヘッドの製造方法
を示す要部断面図である.
先ず、第3図に示すようにNi−Znフエライト等の磁
性材料あるいは結晶化ガラス等の非磁性N IV1より
なる基板(1)の上面に、スパッタリング等の薄膜形戒
技術,フォトリングラフイー技術及びイオンビームエッ
チング等のトライエッチング技術を用いて下部磁性層(
2)、導体コイル層(3)、眉間絶縁層(ll).ギヤ
ノプスベーサ(5)及び上部磁性層(6)よりなるヘノ
ド素子■刷−を被着形成する。3 to 6 are cross-sectional views of essential parts showing the method for manufacturing the thin film magnetic head of this embodiment. First, as shown in Fig. 3, a thin film technique such as sputtering or a photophosphorographic technique is applied to the upper surface of a substrate (1) made of a magnetic material such as Ni-Zn ferrite or non-magnetic NIV1 such as crystallized glass. The lower magnetic layer (
2), conductor coil layer (3), glabella insulating layer (ll). A henodic element consisting of a gear base (5) and an upper magnetic layer (6) is deposited and formed.
次に5第4図に示すように前記ヘッド素子1j−0上4
:SfO.、T t O 2、AR203Wの非磁性絶
縁材料よりなる上面(llalが平坦である保護層(1
1)を被着形成する.前記保護層(}1)の最も薄い部
分の厚みtは2μmである。尚、前記保護層(l1)は
,前記ヘッド素子1mの最上面よりも全ての部分が上方
に位置するまで前記非磁性絶縁材刺よりなる′3膜を被
着した後、該薄膜上に上面が平坦になるようにレジスト
を塗布し、前記薄膜の−E面がレジストの上面と同様に
平坦になるようにイオンビームエッチングを行い形成さ
れる。Next, as shown in FIG.
:SfO. , T t O 2, the upper surface (1
1) Deposit and form. The thickness t of the thinnest part of the protective layer (}1) is 2 μm. The protective layer (l1) is formed by depositing the film '3 made of the non-magnetic insulating material until all parts are located above the top surface of the head element 1m, and then depositing the top surface on the thin film. A resist is applied so that the surface becomes flat, and ion beam etching is performed so that the -E surface of the thin film becomes flat like the upper surface of the resist.
次に、第5図に示すように前記保護層(1l)の上面の
四隅に1μm以下の厚みを有するSiOz、A 0 2
0 3、Tie2等のスベーサ{I2}を設け、前記保
護層{l1}上面に超音波洗浄及び紫外線洗浄を施した
攪、該保護層(11)上に前記スベーサ(l2)を介し
て、BaTiOi等の非磁性材料よりなる保護板(8)
を載置する.
次に、前記保護層(11)と前記保護板{8}との間に
第6図に示すように例えばシリコンアルコキシド(例え
ばs i(OCzHs)a) 、加水分解に必要なH2
0触媒としてのPI(例えばHCI>及び溶媒(例えば
C 2H so H )よりなるシリコンアルコキシド
溶液(21)を浸透させる。第8図(a)はこの状態を
示す図であり、保護層(l1)と保護板(8)との間隙
に介在するシリコンアルコシキド溶液(21)中にはシ
リコンアルコシキド分子(22)が存在している。Next, as shown in FIG. 5, SiOz and A 0 2 having a thickness of 1 μm or less are placed at the four corners of the upper surface of the protective layer (1l).
0 3, a substrate such as Tie2 {I2} is provided, and the top surface of the protective layer {l1} is subjected to ultrasonic cleaning and ultraviolet cleaning. Protective plate (8) made of non-magnetic material such as
Place it. Next, between the protective layer (11) and the protective plate {8}, as shown in FIG.
A silicon alkoxide solution (21) consisting of PI as a catalyst (e.g. HCI) and a solvent (e.g. C 2 H so H ) is infiltrated. FIG. Silicon alkoxide molecules (22) are present in the silicon alkoxide solution (21) interposed in the gap between the protective plate (8) and the silicon alkoxide solution (21).
次に,前述の工程でシリコンアルコキシド溶液(21)
が浸透された前述の積層体を第7図に示す条件で加熱す
る。この加熱工程によりシリコンア′ルコキシド溶液中
のシリコンアルコキシド分子は先ず下記の(iJ式に示
すように加水分解し、更にこの加水分解により生成され
たS 1 ( OH ) aは下記の(iil式に示す
ように重合してsio2粒子となり、前記コアブロック
半休(18a) (18b)間の溶液は粘土が上昇し、
ゾル状になる.
?si fOc211s)a+4111120 ’ll
si (011),+4aCJs011 +・+
い )osi (Oi1)a→nSiO■+2o112
0 −(l+1尚、上述の加水分解の実際
に近い式は
M (OR) o+xll■OJ (011) X (
01?) o−uROII − ( llI)?
あり、上記(i)はfiil式の理想状態である。Next, in the above step, silicon alkoxide solution (21)
The above-mentioned laminate impregnated with is heated under the conditions shown in FIG. Through this heating process, the silicon alkoxide molecules in the silicon alkoxide solution are first hydrolyzed as shown in the following (iJ formula), and S 1 (OH) a generated by this hydrolysis is as shown in the following (iil formula). The clay is polymerized to become sio2 particles, and the solution between the core blocks (18a) and (18b) rises.
It becomes a sol. ? sifOc211s)a+4111120'll
si (011), +4aCJs011 +・+
)osi (Oi1)a→nSiO■+2o112
0 −(l+1The formula close to the actual hydrolysis described above is M (OR) o+xll■OJ (011) X (
01? ) o-uROII-(llI)?
The above (i) is the ideal state of the fiil formula.
また、上述の重合反応は下記に示す脱水反応と脱アルコ
ール反応とにより起こる。Moreover, the above-mentioned polymerization reaction occurs through the dehydration reaction and dealcoholization reaction shown below.
脱水反応
If − O II + H − 0一關→−M −
0 − M + II■0脱アルコール反応
誠−0 11 + R − 0 − M−→−M −
0 − M + R0 It第8図(b)はシリコンア
ルコキシド溶液{2l}が上述の(i)式、{韓}式の
反応によりSi02粒了(23)となり、溶液がゾル状
になることを示していル.前記SiOz粒子+231は
更ニ凝集し゜C第8UAfc+に示すように凝集粒子(
24)となり、溶液はゲル状になる.この凝集は500
℃の加熱により更に進行し、溶液は第8図(d)に示す
ように固化してSiO2の固体よりなる非磁性酸化物層
(13)となる.
上述の反応では、シリコンアルコキシド溶液(21)中
のS i O !−{と保護層(1!)表面、及び保護
板(8)表面の酸化層中に存在するOHとから820が
解離し、非磁性酸化物層(13)と保護層(I1)、及
び保護板(8)との界面には−A−0−Si−(Aは保
護層中或いは保護板中の原子〉の結合が生じ、前記非磁
性酸化物層(13)が接合層として働き、第1図及び第
2図に示すように前記保護板(8)は保護M (IIj
上に接合固定される。尚、第1図はlJfi磁気ヘッド
の要部断面図、第2図は媒体摺接面を示す図である.
尚、第7図に示す加熱工程において、200℃での予備
加熱は予めシリコンアルコキシド溶液中のH.O、アル
コール等を揮発させるためのものであり、この揮発によ
り大面積の接合も良好に行うことが出来る.
以後は前述の工程により形威された接合体に所定の外形
加工を施すことにより本実施例の薄膜磁気ヘッドが形或
される。Dehydration reaction If - O II + H - 0 series → -M -
0 - M + II■0 Dealcoholization reaction -0 11 + R - 0 - M-→-M -
0 - M + R0 It Figure 8 (b) shows that the silicon alkoxide solution {2l} becomes Si02 grains (23) through the reaction of the above-mentioned equation (i) and {Kan} equation, and the solution becomes a sol. It shows. The SiOz particles +231 are further agglomerated to form agglomerated particles (
24), and the solution becomes gel-like. This agglomeration is 500
The solution progresses further by heating to .degree. C., and the solution solidifies to form a nonmagnetic oxide layer (13) made of solid SiO2, as shown in FIG. 8(d). In the reaction described above, S i O ! in silicon alkoxide solution (21). - 820 dissociates from OH present in the oxide layer on the surface of the protective layer (1!) and the surface of the protective plate (8), and the nonmagnetic oxide layer (13), the protective layer (I1), and the protective Bonding of -A-0-Si- (A is an atom in the protective layer or protective plate) occurs at the interface with the plate (8), and the non-magnetic oxide layer (13) acts as a bonding layer. As shown in FIGS. 1 and 2, the protection plate (8) has a protection M (IIj
It is bonded and fixed on top. Incidentally, FIG. 1 is a sectional view of the main part of the lJfi magnetic head, and FIG. 2 is a diagram showing the sliding contact surface of the medium. In the heating step shown in FIG. 7, preheating at 200° C. is performed using H.I. It is used to volatilize O, alcohol, etc., and this volatilization allows for good bonding of large areas. Thereafter, the thin film magnetic head of this embodiment is formed by subjecting the bonded body formed through the above steps to a predetermined external shape.
上述のようなrIiH磁気ヘッドの製造方法では、1μ
m以下の非常に薄い非磁性酸化物層(l3)により保護
板(8)をヘッド素子Lllltに強固に接合すること
が出来、前記非磁性酸化物1(13+の摩耗を仰えるこ
とが出来る。In the method for manufacturing the rIiH magnetic head as described above, the
The very thin non-magnetic oxide layer (l3) with a thickness of less than m allows the protection plate (8) to be firmly bonded to the head element Lllllt, and it is possible to prevent wear of the non-magnetic oxide 1 (13+).
また、上述の製造方法では、接合用の非磁性醒化物層(
13)を形或するための出発溶液であるシリコンアノレ
コキシド冫容液(2l)はSi(○Cz}−1’i)a
が酸(HCR)及び溶媒(C2H,OH)中分敗されて
いる溶液であるため、前記非磁性酸化杓Jti4(13
}中の原子と、保護層(1j)表面及び保譲板(8)表
面の原子との結合に重要である○I4基は十分に存在し
,前記保護板(8)をヘッド素子ill上に強固に接合
することが出来る。In addition, in the above manufacturing method, a non-magnetic compound layer for bonding (
13) The silicon anolecoxide solution (2 liters), which is the starting solution for forming Si(○Cz}-1'i)a
Since this is a solution that has been separated in acid (HCR) and solvent (C2H,OH), the non-magnetic oxidation scoop Jti4 (13
}I4 groups, which are important for bonding between the atoms in the protective layer (1j) and the protective plate (8), are present in sufficient quantity, and the protective plate (8) is placed on the head element ill. Can be firmly bonded.
また、前記非磁性酸化物層としてはSin2以外にAl
zOi、Tie2、Zr02 SiO2、T1 02
S l 02. I neo S no. N
a.zo BzOi−S i 02、BaTiO3、
P b T i O <、KT i 0 .1¥が4b
つ、これらはA l ( QC 3}+7) 3等の
金属アルコキシド溶液、アセチルアセトネーl・、カル
ボキシレート等の金属有機化合物により生成可能である
。Further, as the non-magnetic oxide layer, in addition to Sin2, Al
zOi, Tie2, Zr02 SiO2, T1 02
S l 02. I neo S no. N
a. zo BzOi-S i 02, BaTiO3,
P b T i O <, KT i 0 . 1 yen is 4b
These can be produced using metal alkoxide solutions such as Al (QC 3}+7) 3, metal organic compounds such as acetylacetonate, carboxylates, etc.
(ト) 発明の効果
本発明に依hば、機絨的強度に優れ、且つスベーシング
口スによる記録、再生特性の劣化を防止した薄膜磁気ヘ
ッドを製造することが可能となる。(G) Effects of the Invention According to the present invention, it is possible to manufacture a thin film magnetic head that has excellent mechanical strength and prevents deterioration of recording and reproducing characteristics due to spacing.
第lL7I乃至第8図は本発明に1系り、第1図は薄膜
磁気ヘッドの要部断面図、第2図は薄1模磁気ヘッドの
媒体t古接面を示す図、第3図、第4図、第51A及び
第6図は薄膜磁気ヘッドの製造方法を示す要部断面図、
第7図は加然温度を示す図、第8[’<は接合の過程を
示す口である。第9 1′2I及び第101Aは従来例
に係り、第9図は薄膜磁気ヘッドの要部断面図、第10
図は薄膜磁気ヘッドの媒体t8接面を示す図である.
(1)・・・基板、(2)一・・下部磁性層、(3)・
・導体コイル層、(l1)・・層間絶縁層.(5)・・
ギヤノプスベーサ,(6)・・・上部磁性層、(8)保
護板、【】Ol・・・ヘッド素子、(I1)・・保護層
、(Ilal・・上面、(l3)・・・非磁性酸化物f
fi. +211・・・シリコンアルコキジド溶液(金
属有機化合物の溶液〉。Figures 1L7I to 8 relate to the present invention; Figure 1 is a cross-sectional view of a main part of a thin-film magnetic head, Figure 2 is a diagram showing a surface in contact with the medium of a thin-film magnetic head, Figure 3; 4, 51A and 6 are sectional views of main parts showing a method of manufacturing a thin film magnetic head;
FIG. 7 is a diagram showing the bonding temperature, and No. 8 is a diagram showing the bonding process. No. 9 1'2I and No. 101A relate to the conventional example, and FIG. 9 is a sectional view of the main part of the thin film magnetic head,
The figure shows the surface in contact with the medium t8 of a thin film magnetic head. (1)...substrate, (2)--lower magnetic layer, (3)...
・Conductor coil layer, (l1)...interlayer insulation layer. (5)...
Gyanops base, (6)...Top magnetic layer, (8) Protective plate, []Ol...Head element, (I1)...Protective layer, (Ilal...Top surface, (l3)...Nonmagnetic oxide thing f
fi. +211...Silicon alkoxide solution (solution of metal organic compound).
Claims (1)
ル層を覆う層間絶縁層、磁気ギャップ部及び上部磁性層
よりなるヘッド素子を被着形成し、該ヘッド素子上に非
磁性絶縁材料より成り上面が平坦である保護層を被着形
成した後、前記保護層の上面と非磁性材料よりなる保護
板との間にOH基を含有する金属有機化合物の溶液を浸
透させ、該溶液を加熱することにより固化させ前記保護
層上に前記保護板を接合固定することを特徴とする薄膜
磁気ヘッドの製造方法。(1) A head element consisting of a lower magnetic layer, a conductive coil layer, an interlayer insulating layer covering the conductive coil layer, a magnetic gap portion, and an upper magnetic layer is formed on a substrate, and a non-magnetic insulating material is placed on the head element. After depositing and forming a protective layer made of aluminum with a flat upper surface, a solution of a metal organic compound containing an OH group is infiltrated between the upper surface of the protective layer and a protective plate made of a non-magnetic material. A method of manufacturing a thin-film magnetic head, characterized in that the protective plate is bonded and fixed onto the protective layer by solidifying by heating.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15739589A JPH0323510A (en) | 1989-06-20 | 1989-06-20 | Production of thin-film magnetic head |
CA 2009504 CA2009504A1 (en) | 1989-02-10 | 1990-02-07 | Magnetic head and process for producing same |
KR1019900001576A KR900013462A (en) | 1989-02-10 | 1990-02-09 | Magnetic Head and Manufacturing Method Thereof |
EP19900102585 EP0382244A3 (en) | 1989-02-10 | 1990-02-09 | Magnetic head and process for producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15739589A JPH0323510A (en) | 1989-06-20 | 1989-06-20 | Production of thin-film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0323510A true JPH0323510A (en) | 1991-01-31 |
Family
ID=15648698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15739589A Pending JPH0323510A (en) | 1989-02-10 | 1989-06-20 | Production of thin-film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0323510A (en) |
-
1989
- 1989-06-20 JP JP15739589A patent/JPH0323510A/en active Pending
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