JPH03233699A - Gas detector - Google Patents
Gas detectorInfo
- Publication number
- JPH03233699A JPH03233699A JP2028427A JP2842790A JPH03233699A JP H03233699 A JPH03233699 A JP H03233699A JP 2028427 A JP2028427 A JP 2028427A JP 2842790 A JP2842790 A JP 2842790A JP H03233699 A JPH03233699 A JP H03233699A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas sensor
- output
- sensor
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 238000001514 detection method Methods 0.000 claims description 36
- 230000001052 transient effect Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 111
- 239000004065 semiconductor Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 12
- 238000007084 catalytic combustion reaction Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical group CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000567 combustion gas Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001282 iso-butane Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000011540 sensing material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Emergency Alarm Devices (AREA)
Abstract
Description
【発明の詳細な説明】
Ｅ産業上の利用分野〕
本発明はガスを検知するガス検知装置に関するものであ
る。[Detailed Description of the Invention] E-Industrial Application Field] The present invention relates to a gas detection device for detecting gas.
［従来の技術〕
ガス検知装置として、例えばガスセンサを加熱すること
により可焼性ガスを検知し、該ガスが発生すると外部に
対して警報を行うガス漏れ警報器がある。このようなガ
ス検知装置は通常３〜５Ｗｈの消費電力を必要とするた
め、−ｉに商用交流電源により駆動される。[Prior Art] As a gas detection device, for example, there is a gas leak alarm device that detects combustible gas by heating a gas sensor and issues an alarm to the outside when the gas is generated. Since such a gas detection device normally requires power consumption of 3 to 5 Wh, it is driven by a commercial AC power source.
［発明が解決しようとする課題〕
従来の装置は上述のように消費電力が比較的大きいため
、携帯用の用途も含めて乾電池などで動作させることが
できない。また消費電力を軽減するには、ガスセンサを
小型化することが考えられるが、ガスセンサの製造が難
しく、実用には至っていない。[Problems to be Solved by the Invention] As described above, conventional devices consume relatively large amounts of power, and therefore cannot be operated on dry batteries or the like, even in portable applications. Further, in order to reduce power consumption, it is conceivable to downsize the gas sensor, but manufacturing of the gas sensor is difficult and this has not been put to practical use.
よって本発明は、乾電池などにおいても長時間連続して
動作できるように、消費電力の軽減を図ったガス検知装
置を提供することを課題としている。Therefore, it is an object of the present invention to provide a gas detection device with reduced power consumption so that it can operate continuously for a long time even with dry batteries.
上記課題を解決するため本発明により威され大ガス検知
装置は、ガスセンサと、該ガスセンサ苓通常状態におい
て断続的に加熱する加熱手段と、前記加熱手段によるガ
スセンサの加熱時における前記ガスセンサの過渡出力を
検出し、該ガスセンサの過渡出力が所定値以上となった
ときに、前記加熱手段によるガスセンサの加熱を断続的
加熱力ら連続的加熱に切り替えるセンサ出力検出手段と
該ガスセンサが連続的に加熱されているときのガスセン
サの出力により被検知ガスを検出するガス検出手段とを
備えることを特徴としている。In order to solve the above problems, the large gas detection device according to the present invention includes a gas sensor, a heating means that intermittently heats the gas sensor in a normal state, and a transient output of the gas sensor when the gas sensor is heated by the heating means. sensor output detection means that switches the heating of the gas sensor by the heating means from intermittent heating power to continuous heating when the transient output of the gas sensor becomes equal to or higher than a predetermined value, and the gas sensor is continuously heated. The present invention is characterized by comprising a gas detection means for detecting a gas to be detected based on the output of the gas sensor when the gas sensor is present.
上記構成において、通常状態ではガスセンサは加熱手段
により断続的に加熱されている。このとき被検知ガスが
発生すると、ガスセンサよりの出力はその加熱時に過渡
的に増大する。そこでセンサ出力検出手段はガスセンサ
の加熱時における該ガスセンサの出力を検出し、被検知
ガスが発生してセンサ出力が過渡的に増大して所定値以
上となったことを検出すると、ガスセンサは加熱手段に
より連続的に加熱される。そしてガス検出手段はこのと
きのガスセンサの出力より被検知ガスを検出する。In the above configuration, under normal conditions, the gas sensor is intermittently heated by the heating means. When the gas to be detected is generated at this time, the output from the gas sensor increases transiently when the gas is heated. Therefore, the sensor output detection means detects the output of the gas sensor when the gas sensor is heated, and when it is detected that the gas to be detected is generated and the sensor output increases transiently to a predetermined value or more, the gas sensor detects the output of the gas sensor when the gas sensor is heated. heated continuously. Then, the gas detection means detects the gas to be detected from the output of the gas sensor at this time.
以下、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図は本発明によるガス検知装置の一実施例を示すブ
ロック図であり、同図において、１は乾電池（例えばア
ルカリ電池単３０４本）によるバッテリ、２は半導体式
ガスセンサ、３は半導体式ガスセンサ２のヒータを加熱
するヒータ駆動回路、４．５はヒータ駆動回路３に対し
て加熱時間と無加熱時間をそれぞれ与えてこれを制御す
るタイマ回路、６は半導体式ガスセンサ２の加熱時にお
ける半導体式ガスセンサ２の内部抵抗の過渡的な変化を
検出し、該検出出力に応してヒータ駆動回路３を制御す
るヒータ判定回路、７はヒータ駆動回路３がヒータ判定
回路６により制御されているときに半導体式ガスセンサ
２の内部抵抗変化を検出し、被検知ガスの有無を判定す
る検出判定回路、８及び９は検出判定回路７の検出出力
によってそれぞれ動作する表示回路及び警報回路である
。FIG. 1 is a block diagram showing one embodiment of the gas detection device according to the present invention, in which 1 is a battery using dry batteries (for example, 304 AA alkaline batteries), 2 is a semiconductor gas sensor, and 3 is a semiconductor gas sensor. 2 is a heater drive circuit that heats the heater 2; 4.5 is a timer circuit that gives heating time and non-heating time to the heater drive circuit 3 and controls the same; 6 is a semiconductor type gas sensor when heating the semiconductor type gas sensor 2; A heater determination circuit 7 detects a transient change in the internal resistance of the gas sensor 2 and controls the heater drive circuit 3 according to the detected output; A detection and determination circuit detects a change in internal resistance of the semiconductor gas sensor 2 and determines the presence or absence of a gas to be detected, and reference numerals 8 and 9 are a display circuit and an alarm circuit respectively operated by the detection output of the detection and determination circuit 7.
上記半導体弐センサ２及びヒータ駆動回路３は第２図に
示すように構成される。すなわち、半導体弐センサ２は
ヒータＲ１と感知部にとから構成され、感知部には厚さ
０．３８ ｔｒｒｍ及び３ＩＩＩＩ１１角のアル藁ナチ
ソブ上にスクリーン印刷によりガス感知材としてＳ。０
２系金属酸化物を膜厚約３０ｕｍで設シすることによっ
て形成されている。またヒータＲ１は上記感知部にの裏
面にＲｕＯｚを感知材同様にスクリーン印刷にて設ける
ことによって形成される。上記感知部にばヒータＲ１に
て加熱した状態において被検知ガスが存在すると、゛そ
の内部抵抗が低下する特性を有する。The semiconductor two sensor 2 and the heater drive circuit 3 are constructed as shown in FIG. That is, the semiconductor sensor 2 is composed of a heater R1 and a sensing part, and the sensing part is made of S as a gas sensing material by screen printing on a 0.38 trrm thick and 3III11 square aluminum plate. 0
It is formed by depositing a di-metal oxide film with a thickness of about 30 um. Further, the heater R1 is formed by providing RuOz on the back surface of the sensing portion by screen printing in the same manner as the sensing material. The sensing portion has a characteristic that when a gas to be detected exists in a state heated by the heater R1, its internal resistance decreases.
上記ヒータ駆動回路３はヒータＲ，に直列接続されたヒ
ータ電源ｖ２及びスイッチＳＷより構成され、スイッチ
ＳＷはタイマ回路４，５及びヒータ判定回Ｂ６の各出力
によりそのオンオフ動作が制御される。またＲ２は半導
体式ガスセンサ２と直列接続された電流検出抵抗であり
、その端子電圧がヒータ判定回路６及び検出判定回路７
に人力される。更にＶ、は動作電源であり、ヒータ電源
Ｖ２と共にバッテリ１から供給される。The heater drive circuit 3 is composed of a heater power supply v2 and a switch SW connected in series to the heater R, and the on/off operation of the switch SW is controlled by the respective outputs of the timer circuits 4 and 5 and the heater determination circuit B6. Further, R2 is a current detection resistor connected in series with the semiconductor type gas sensor 2, and its terminal voltage is applied to the heater determination circuit 6 and the detection determination circuit 7.
is man-powered. Furthermore, V is an operating power supply, which is supplied from the battery 1 together with the heater power supply V2.
以上の構成において、まず半導体式ガスセンサ２の作用
について説明する。第３図は半導体式ガスセンサ２を約
３５０°Ｃで１秒、３秒、５秒、１０秒間断続的に加熱
したときのセンサ出力特性を示し、実線で示す特性Ａが
半導体式ガスセンサ２を清浄空気中で加熱した場合であ
り、点線で示す特性Ｂがイソブタンガス１００００ｐｐ
Ｉ中で加熱した場合である。同図から、ガスの有無によ
り半導体式ガスセンサ２の感知部ＫＯ加熱時内部抵抗が
変化し、半導体式ガスセンサ２を短時間継続的に加熱す
ることにより、被検知ガスの有無に応じてそのセンサ出
力の過渡的応答特性に相違が見られることが分かる。そ
こでこれを判定することにより被検知ガスの有無の判定
が可能となる。In the above configuration, the operation of the semiconductor gas sensor 2 will be explained first. Figure 3 shows the sensor output characteristics when the semiconductor gas sensor 2 is heated intermittently at approximately 350°C for 1 second, 3 seconds, 5 seconds, and 10 seconds, and characteristic A shown by the solid line indicates that the semiconductor gas sensor 2 is clean. This is the case when heated in air, and characteristic B shown by the dotted line is isobutane gas 10,000pp.
This is the case when heated in I. From the same figure, the internal resistance of the sensing part KO of the semiconductor gas sensor 2 changes depending on the presence or absence of gas, and by continuously heating the semiconductor gas sensor 2 for a short time, the sensor output changes depending on the presence or absence of the gas to be detected. It can be seen that there are differences in the transient response characteristics. Therefore, by determining this, it becomes possible to determine the presence or absence of the gas to be detected.
また第４図は各種の被検知ガスに対する１０秒間加熱し
たときのセンサ出力特性を示し、第５図は５秒間加熱し
たときの各種ガスの濃度に対するセンサ出力特性を示す
。Further, FIG. 4 shows the sensor output characteristics when heated for 10 seconds with respect to various gases to be detected, and FIG. 5 shows the sensor output characteristics with respect to the concentration of various gases when heated for 5 seconds.
次に第１図の実施例の動作について、第６図のタイ狗ン
グチャート図を参照して説明する。ここで、タイマ回路
４は５秒間ガスセンサ２を加熱し、タイマ回路５は５分
間無加熱とする。またヒータ判定回路６の判定レベルを
ＩＶ、検出判定回路７の検出判定レベルを１■とする。Next, the operation of the embodiment shown in FIG. 1 will be explained with reference to the timing chart shown in FIG. Here, the timer circuit 4 heats the gas sensor 2 for 5 seconds, and the timer circuit 5 does not heat the gas sensor 2 for 5 minutes. Further, the determination level of the heater determination circuit 6 is assumed to be IV, and the detection determination level of the detection determination circuit 7 is assumed to be 1■.
現象■は清浄空気中の状態を示し、同図（ａ）のように
被検知ガスは存在しない。この通常状態ではヒータ駆動
回路３のスイッチＳＷはタイマ回路４及び５の出力によ
り連続的に５秒間オンし、５秒間オフするため、ヒータ
電ｔｉ Ｖ ２は同図（Ｃ）に示すように半導体式ガス
センサ２のヒータＲ０に対して上記の時間で断続的に供
給される。従って、電流検出抵抗Ｒ２の端子電圧より得
られるセンサ出力電圧は同図ω）のようにヒータ判定レ
ベル（ＩＶ）及び検出判定レベル（ＩＶ）以下となり、
検出判定回路７からは同図（ｄ）に示すようにガス検出
出力が発生しない。Phenomenon (3) indicates a state in clean air, where no gas to be detected exists, as shown in FIG. 2(a). In this normal state, the switch SW of the heater drive circuit 3 is continuously turned on for 5 seconds and turned off for 5 seconds by the outputs of the timer circuits 4 and 5, so that the heater voltage tiV 2 is turned on as shown in FIG. It is intermittently supplied to the heater R0 of the type gas sensor 2 at the above-mentioned times. Therefore, the sensor output voltage obtained from the terminal voltage of the current detection resistor R2 is below the heater judgment level (IV) and the detection judgment level (IV) as shown in ω) in the same figure.
No gas detection output is generated from the detection determination circuit 7, as shown in FIG. 4(d).
次に現象■は被検知ガス（例えばイソブタンガス）が発
生した状態を示し、同図（ａ）に示すように上記ガスが
発生すると、上述のように半導体式ガスセンサ２の内部
抵抗が低下し、センサ出力は同図（ｂ）のように加熱時
における過渡的応答出力が増大し、ヒータ判定レベル以
上となる。ヒータ判定回路６は該レベル以上であること
を判定するとヒータ駆動回路３のスイッチＳＷを常時オ
ン状態にし、同図（Ｃ）のようにヒータＲ１に対してヒ
ータ電圧Ｖ２を連続的に供給し、感知部Ｋを連続的に加
熱する。検出判定回路７はこの連続加熱状態における被
検知ガスによる半導体式ガスセンサ２の感知部にの内部
抵抗変化（減少）を検出し、ガスセンサ出力（電流検出
抵抗Ｒ２の端子電圧）が同図（ｂ）のように検出判定レ
ベル以上になると検出判定回路７より同図（ｄ）のよう
に警報出力を発生する。Next, phenomenon (2) indicates a state in which a gas to be detected (for example, isobutane gas) is generated, and as shown in FIG. As for the sensor output, as shown in FIG. 2(b), the transient response output during heating increases and becomes equal to or higher than the heater determination level. When the heater determination circuit 6 determines that the level is higher than the level, the switch SW of the heater drive circuit 3 is kept on at all times, and the heater voltage V2 is continuously supplied to the heater R1 as shown in FIG. The sensing part K is heated continuously. The detection/judgment circuit 7 detects the internal resistance change (decrease) in the sensing part of the semiconductor gas sensor 2 due to the gas to be detected in this continuous heating state, and the gas sensor output (terminal voltage of the current detection resistor R2) is as shown in FIG. When the value exceeds the detection judgment level, the detection judgment circuit 7 generates an alarm output as shown in FIG. 3(d).
この警報出力により表示回路８や警報回路９が動作し、
外部に警報を与える。This alarm output activates the display circuit 8 and alarm circuit 9.
Give an alarm to the outside.
また被検知ガスが存在しなくなり、半導体式ガスセンサ
２の感知部にの内部抵抗が増大して、ガスセンサ出力（
電流検出抵抗Ｒ２の端子電圧）がヒータ判定レベル以下
になるとヒータ判定回路６は元の断続的な加熱を行うよ
うにヒータ駆動回路３を制御する。In addition, the gas to be detected no longer exists, and the internal resistance in the sensing part of the semiconductor gas sensor 2 increases, causing the gas sensor output (
When the terminal voltage of the current detection resistor R2 becomes less than the heater determination level, the heater determination circuit 6 controls the heater drive circuit 3 to perform the original intermittent heating.
なお上記実施例において、通常状態におけるヒータＲ３
の加熱及び無加熱時間は例えばそれぞれ１〜１０秒、１
〜１０分の範囲で設定すればガスを検知することができ
、また各判定レベルも半導体式ガスセンサ２により任意
に設定してよい。例えば上記実施例において、通常状態
におけるヒータＲ，の加熱時の消費電流は約１５０ｍＡ
ｈ、無加熱時では約１００μＡｈであり、ヒータ加熱時
間を３秒、無加熱時間を５分に設定すると、単１アルカ
リ電池（約７．５ Ａ ｈ ）を使用すれば約１９０日
間連続して使用することができる。Note that in the above embodiment, heater R3 in the normal state
The heating and non-heating times are, for example, 1 to 10 seconds and 1 second, respectively.
Gas can be detected by setting the time within the range of ~10 minutes, and each determination level may also be set arbitrarily by the semiconductor gas sensor 2. For example, in the above embodiment, the current consumption of heater R during heating in the normal state is approximately 150 mA.
h, without heating, it is about 100 μAh, and if the heater heating time is set to 3 seconds and the non-heating time is set to 5 minutes, it can be used continuously for about 190 days using a single alkaline battery (about 7.5 Ah). can be used.
またガスセンサとして半導体式の代わりに接触燃焼式ガ
スセンサを用いることもできる。この接触燃焼式ガスセ
ンサは例えば検知素子として線径２０〜５０μｍの白金
抵抗線を巻装してコイルを構成し、この周囲にパラジウ
ム−アルミナ、または白金−アルミナ等の触媒を塗布し
た後焼成し、１００メツシユの２重金網を被せて構成し
たものである。また比較素子も検知素子と同様にして構
成し、シールキャップを被せた密閉型とする。Further, a catalytic combustion type gas sensor can be used instead of a semiconductor type gas sensor. This catalytic combustion type gas sensor has, for example, a coil formed by winding a platinum resistance wire with a wire diameter of 20 to 50 μm as a detection element, and a catalyst such as palladium-alumina or platinum-alumina is coated around the coil and then fired. It is constructed by covering it with a 100-mesh double wire mesh. Further, the comparison element is constructed in the same manner as the detection element, and is of a sealed type covered with a seal cap.
第７図及び第８図はこのような接触燃焼式ガスセンサに
よる各種被検知ガスに対する１０秒間加熱したときのセ
ンサ出力特性及び５秒間加熱したときのガス濃度に対す
るセンサ出力特性をそれぞれ示す。同図において、エタ
ノールガスに対してのみ過渡応答特性が異なるため、ガ
ス濃度に対してリニアリティがなく過渡応答出力が高く
なるが、本発明では過渡的出力を検出した後に連続的に
ガスセンサを加熱するようにしているので、ＬＰＧガス
検知器や都市ガス検知器に適用したときでもエタノール
との弁別は可能である。FIGS. 7 and 8 show the sensor output characteristics of various gases to be detected by such a catalytic combustion type gas sensor when heated for 10 seconds and the sensor output characteristics with respect to gas concentration when heated for 5 seconds, respectively. In the figure, since the transient response characteristics differ only for ethanol gas, there is no linearity with respect to gas concentration and the transient response output is high, but in the present invention, the gas sensor is continuously heated after detecting the transient output. Therefore, discrimination from ethanol is possible even when applied to LPG gas detectors and city gas detectors.
この接触燃焼式ガスセンサを第１図の装置のガスセンサ
として用いた場合においても、その動作は半導体式ガス
センサによるものと同様であり、これにより被検知ガス
を検知することができる。Even when this catalytic combustion type gas sensor is used as a gas sensor in the apparatus shown in FIG. 1, its operation is similar to that of a semiconductor type gas sensor, and thereby the gas to be detected can be detected.
第９図はガスセンサとして接触燃焼式ガスセンサを用い
たときの第１図の装置におけるタイミングチヤード図を
示し、その内容は半導体式センサを用いたときの第６図
のタイミングチャート図と同様である。Figure 9 shows a timing chart diagram for the device in Figure 1 when a catalytic combustion type gas sensor is used as the gas sensor, and its contents are the same as the timing chart diagram in Figure 6 when a semiconductor type sensor is used. .
なお、同図では、タイマ回路４及び５によりガスセンサ
を５秒間加熱し、５分間無加熱するようにし、ヒータ判
定レヘルを２０ｍＶ、検知判定レヘルを２０ｍＶに設定
している。ただし、タイマ回路４及び５により加熱時間
を１〜１０秒、無加熱時間を１〜１０分の範囲で可変し
ても検出することができ、各判定レヘルもガスセンサに
応じて任意に設定することができる。In the figure, the timer circuits 4 and 5 heat the gas sensor for 5 seconds and leave it unheated for 5 minutes, and the heater determination level is set to 20 mV and the detection determination level is set to 20 mV. However, the timer circuits 4 and 5 can be used to detect even if the heating time is varied in the range of 1 to 10 seconds and the non-heating time is varied in the range of 1 to 10 minutes, and each judgment level can also be set arbitrarily according to the gas sensor. I can do it.
５効 果〕
以上説明したように本発明によれば、ガスセンサの断続
的加熱時におけるガスセンサの出力が過渡的に増大して
所定値以上となったことを検出すると、ガスセンサを連
続的に加熱してこのときのガスセンサの出力より被検知
ガスを検出するようにしているため、消費電力を軽減す
ることができ、乾電池等により長時間動作させることが
できる。5 Effects] As explained above, according to the present invention, when it is detected that the output of the gas sensor during intermittent heating of the gas sensor increases transiently and exceeds a predetermined value, the gas sensor is heated continuously. Since the gas to be detected is detected from the output of the gas sensor at the time of levering, power consumption can be reduced and the device can be operated for a long time using dry batteries or the like.
第１図は本発明によるガス検知装置の一実施例を示すブ
ロック図、
第２図は第１図の半導体式ガスセンサとヒータ駆動回路
の具体例を示す図、
第３図は半導体式ガスセンサの加熱時間に対するセンサ
出力特性を示す図、
第４図は半導体式ガスセンサの各種ガスに対するセンサ
出力特性を示す図、
第５図は半導体式ガスセンサの各種ガスの濃度に対する
センサ出力特性を示す図、
第６図は第１図の装置の各部の波形を示す図、第７図は
接触燃焼式ガスセンサの各種ガスに対するセンサ出力特
性を示す図、
第８図は接触燃焼式ガスセンサの各種ガスの濃度に対す
るセンサ出力特性を示す図、
第９図は第１図の装置の他の実施例における各部の波形
を示す図である。
１・・・バッテリ、２・・・半導体式ガスセンサ、接触
燃焼式ガスセンサ、３・・・ヒータ駆動回路（加熱手段
）、４．５・・・タイマ回路、６・・・ヒータ判定回路
（センサ出力検出手段）、７・・・検出判定回路（ガス
検出手段）、８・・・表示回路、９・・・警報回路、Ｒ
・・・ヒータ、Ｋ・・・感知部、■２・・・ヒータ電源
、ＳＷ・・・スイッチ。Fig. 1 is a block diagram showing an embodiment of the gas detection device according to the present invention, Fig. 2 is a diagram showing a specific example of the semiconductor type gas sensor and heater drive circuit of Fig. 1, and Fig. 3 is a heating of the semiconductor type gas sensor. Figure 4 is a diagram showing sensor output characteristics with respect to time. Figure 4 is a diagram showing sensor output characteristics of a semiconductor type gas sensor with respect to various gases. Figure 5 is a diagram showing sensor output characteristics with respect to concentration of various gases of a semiconductor type gas sensor. Figure 6 is a diagram showing sensor output characteristics with respect to concentration of various gases of a semiconductor type gas sensor. is a diagram showing the waveforms of each part of the device in Figure 1, Figure 7 is a diagram showing the sensor output characteristics of the catalytic combustion gas sensor for various gases, and Figure 8 is the sensor output characteristics of the catalytic combustion gas sensor with respect to the concentration of various gases. FIG. 9 is a diagram showing waveforms of various parts in another embodiment of the apparatus shown in FIG. 1. DESCRIPTION OF SYMBOLS 1...Battery, 2...Semiconductor type gas sensor, catalytic combustion type gas sensor, 3...Heater drive circuit (heating means), 4.5...Timer circuit, 6...Heater determination circuit (sensor output) detection means), 7... detection determination circuit (gas detection means), 8... display circuit, 9... alarm circuit, R
...Heater, K...Sensing unit, ■2...Heater power supply, SW...Switch.
Claims (1)
手段と、 前記加熱手段によるガスセンサの加熱時における前記ガ
スセンサの過渡出力を検出し、該ガスセンサの過渡出力
が所定値以上となったときに、前記加熱手段によるガス
センサの加熱を断続的加熱から連続的加熱に切り替える
センサ出力検出手段と 該ガスセンサが連続的に加熱されているときのガスセン
サの出力により被検知ガスを検出するガス検出手段とを
備える、 ことを特徴とするガス検知装置。[Scope of Claims] A gas sensor; a heating means for intermittently heating the gas sensor in a normal state; and detecting a transient output of the gas sensor when the gas sensor is heated by the heating means, the transient output of the gas sensor being set to a predetermined value. When the above occurs, the gas to be detected is detected by the sensor output detection means which switches the heating of the gas sensor by the heating means from intermittent heating to continuous heating, and the output of the gas sensor when the gas sensor is continuously heated. A gas detection device comprising: a gas detection means for detecting a gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2842790A JP2840652B2 (en) | 1990-02-09 | 1990-02-09 | Gas detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2842790A JP2840652B2 (en) | 1990-02-09 | 1990-02-09 | Gas detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03233699A true JPH03233699A (en) | 1991-10-17 |
| JP2840652B2 JP2840652B2 (en) | 1998-12-24 |
Family
ID=12248363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2842790A Expired - Fee Related JP2840652B2 (en) | 1990-02-09 | 1990-02-09 | Gas detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2840652B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012105423A1 (en) * | 2011-02-04 | 2012-08-09 | 富士電機株式会社 | Battery-powered gas alarm and control device thereof |
| JP2015194845A (en) * | 2014-03-31 | 2015-11-05 | 富士電機株式会社 | Battery type gas alarm unit and control device thereof |
| CN105160827A (en) * | 2015-09-01 | 2015-12-16 | 广西南宁智翠科技咨询有限公司 | Gas alarm system |
| US11531016B2 (en) * | 2018-09-13 | 2022-12-20 | Stmicroelectronics S.R.L. | Method of operating gas sensors and corresponding device, sensor and program product |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5839935U (en) * | 1981-09-09 | 1983-03-16 | 三菱重工業株式会社 | table lifter |
| JPS63315499A (en) * | 1987-06-17 | 1988-12-23 | 株式会社関電工 | High place operation equipment |
-
1990
- 1990-02-09 JP JP2842790A patent/JP2840652B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5839935U (en) * | 1981-09-09 | 1983-03-16 | 三菱重工業株式会社 | table lifter |
| JPS63315499A (en) * | 1987-06-17 | 1988-12-23 | 株式会社関電工 | High place operation equipment |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012105423A1 (en) * | 2011-02-04 | 2012-08-09 | 富士電機株式会社 | Battery-powered gas alarm and control device thereof |
| JP5662484B2 (en) * | 2011-02-04 | 2015-01-28 | 富士電機株式会社 | Battery-powered gas alarm and its control device |
| JP2015194845A (en) * | 2014-03-31 | 2015-11-05 | 富士電機株式会社 | Battery type gas alarm unit and control device thereof |
| CN105160827A (en) * | 2015-09-01 | 2015-12-16 | 广西南宁智翠科技咨询有限公司 | Gas alarm system |
| US11531016B2 (en) * | 2018-09-13 | 2022-12-20 | Stmicroelectronics S.R.L. | Method of operating gas sensors and corresponding device, sensor and program product |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2840652B2 (en) | 1998-12-24 |
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