JPH03232225A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To enable multiple wafers to be processed evenly by automatically rotating and shifting a magnet by a method wherein a magnet driving mechanism which moves the magnet, for increasing the density of plasma, in parallel with a wafer surface over the whole wafer surface is installed. CONSTITUTION:When a motor 5 is driven, the gears 4c, 4a, 4b are successively driven so that a magnet may be shifted, while rotating, along a rack 2. At this time, since the plasma density in a chamber 6 is heightened only in a magnetized part, any wafer on the lower side can be evenly etched away, etc., by the movement of the magnet 1. Furthermore, when the gear 4b reach a stopper 3, the motor 5 is reversely driven, that is, the magnet 1 is to be reversely shifted along the rack 2. By repeating said procedures, any wafer can be automatically processed in even distribution.

Description

[Detailed Description of the Invention] Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to equipment for processing wafers using plasma.

J. Prior Art FIG. 6 shows a schematic configuration of a conventional semiconductor manufacturing apparatus. In this device 6, the wafer 20 is placed on the cathode 2I, and 13.56
Apply MHz high frequency power (IW/cm”. Anode 2
A Sm-Co (samarium-cobalt) magnet 1 that forms a closed magnetic circuit is placed on the outer surface of the magnet 2, and the electric field of the ion sheath and the magnetic field from the anode side cause a high-density discharge, even at low pressure. The reason why the discharge is possible is that the NS gap of the magnet 1 has a closed loop shape, and a magnetron discharge occurs along which electrons drift, and ionization is performed efficiently. Further, the magnet 1 is eccentrically rotated to perform uniform plasma etching of the wafer 20. The picture electrode spacing is 32 mm, and the horizontal magnetic field component on the wafer 20 at that time is about 100 Gauss.

A conceptual diagram of the above plasma etching is shown in FIG.

■ Reduce ion scattering and direct ions to wafer 2.
0, the gas pressure is lowered to a pressure region with a mean free path longer than the sheath width, and a magnetic field is applied from the anode side to cause magnetron discharge at a position away from the wafer 20. ) This creates high-density plasma even under low pressure. get.

However, when processing a large number of wafers at once, it is difficult to obtain uniform plasma simply by rotating the magnet because the magnetic force is weak at the edge of the magnet and the direction of the magnetic field lines is not perpendicular to the electric field E. There was a problem.

[Problem to be solved by the invention]

However, because conventional semiconductor manufacturing equipment processes only a small number of wafers at a time, it is necessary to perform the process multiple times for mass production, and when processing many wafers at a time, plasma uniformity deteriorates. Therefore, there was a problem in that all wafers were not processed in the same way.

This invention was made to solve the above-mentioned problems, and it is possible to process a large number of wafers at once and uniformly, thereby creating a semiconductor manufacturing device that has high production efficiency and is capable of mass production. The purpose is to obtain.

[Means to solve the problem]

The semiconductor manufacturing apparatus according to the present invention includes a magnet that densifies plasma, and a magnet that is parallel to the wafer placement surface.
In addition, a magnet drive mechanism is provided to move the magnet over the entire surface.

[Effect]

In this invention, the magnet that densifies the plasma is moved parallel to the wafer surface and across the entire surface of the wafer, so that the high-density plasma region is spread over the other wafer. This makes it possible to perform uniform processing on all wafers at once.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a magnet drive mechanism in a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the figure, 6 is a chamber for generating plasma, and l is a magnet located above the chamber 6 with a distance of about 1 mm. This may be an electromagnet. Further, 4a and 4b are connected to the magnet 1 via the shaft 8.
2 is a rack (RACK) that meshes with the second gear 4b, and 3 is a stopper for the gear 4b. Further, 5 is a motor, and a drive gear 4C is attached to the rotating shaft 5a of the motor, and the gear 4C meshes with the first gear 4a. These members constitute a magnet drive mechanism.

FIG. 2 is an enlarged view showing details of the drive mechanism, where:
A fixed support 7 supports the motor 5 and the shaft 8.

Next, the effects will be explained.

When the motor 5 rotates, the gears 4c and 4a.

4b, the rotational force is sequentially transmitted, and as shown in FIG. 4, the magnet 1 moves along the rack 2 while rotating. Third
The figure shows the path 11 along which the magnet 1 travels in the magnet scanning plane 10 on the Puvsma device 6.

At this time, since the plasma density within the chamber 6 increases only in areas where there is magnetic force, etching, etc., is uniformly performed on all wafers below due to the movement of the magnet 1. Further, when the gear 4b reaches the stopper 3, the motor 5 starts to rotate in the opposite direction, and moves in the opposite direction along the rank 2. By repeating this process, uniform processing distribution can be automatically obtained for any wafer.

In this way, in this embodiment, the magnet 1 that increases the density of plasma is moved parallel to the wafer placement surface and over the entire surface, so that it is possible to determine which wafer the high-density plasma region is on. This makes it possible to uniformly process all wafers at once.

In the above embodiment, a gear and a rack were used for the magnet drive mechanism, but the gear and rack were used because they have a large frictional force. You can also replace it with a face.

Further, the movement path of the magnet is not limited to the one shown in FIG. 3, but may be one that moves in a zigzag pattern as shown in FIG.

Furthermore, wafer processing is not limited to etching processing, but may also include deposition, doping, etc.
The magnet drive mechanism of the present invention is applicable to all apparatuses that process wafers using plasma.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus of the present invention, in addition to the magnet that densifies plasma, a magnet drive mechanism that moves the magnet parallel to and throughout the wafer surface is provided. Therefore, it is possible to automatically rotate and move the magnet to uniformly process a large number of wafers, thereby improving production efficiency and reducing costs.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing a magnet drive mechanism in a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged view of the waist of the drive mechanism, FIG. 3 is a view showing the scanning path of the magnet, and FIG. The figure is a diagram conceptually showing how the magnet scans, FIG. 5 is a diagram showing another example of the scanning path, FIG. 6 is a schematic diagram of a conventional plasma processing apparatus for semiconductor manufacturing, and FIG. FIG. 2 is a conceptual diagram showing the state of plasma etching in the apparatus. 1...Magnet, 2...Rank, 3...Stopper, 4
a to 4c... Gear, 5... Motor, 6... Plasma processing device, 7... Fixed support. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In semiconductor manufacturing equipment that processes wafers using high-density plasma and has a magnet that activates plasma by supplying a magnetic field into a plasma region, the magnet is placed parallel to the wafer placement surface and the wafer is A semiconductor manufacturing apparatus characterized in that a magnet drive mechanism is provided to move the magnet over the entire arrangement surface, and the plasma is uniformly activated.