JPH03230583A - Organic-film light emitting element - Google Patents

Organic-film light emitting element

Info

Publication number
JPH03230583A
JPH03230583A JP2510090A JP2510090A JPH03230583A JP H03230583 A JPH03230583 A JP H03230583A JP 2510090 A JP2510090 A JP 2510090A JP 2510090 A JP2510090 A JP 2510090A JP H03230583 A JPH03230583 A JP H03230583A
Authority
JP
Japan
Prior art keywords
light emitting
organic
electrode
emitting layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2510090A
Inventor
Takashi Ekusa
Nobuhiro Motoma
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2510090A priority Critical patent/JPH03230583A/en
Priority claimed from EP90303351A external-priority patent/EP0390551B1/en
Publication of JPH03230583A publication Critical patent/JPH03230583A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To make the light emitting efficiency of the title element higher by using a plurality of organic films and utilizing a carrier enclosing effect obtained by a band-gap difference.
CONSTITUTION: This organic-film light emitting element is constituted of the first electrode (M1) 6, first organic film (O1) 5, third organic film (O3) 4, second organic film (O2) 3, and second electrode (M2) 2 in the order from the top. The second electrode 2 is a transparent electrode of ITO, etc., formed on, for example, a glass substrate 1 and light is taken out from the substrate 1 side. The light emitting layer between the organic films 5 and 3 is constituted of a single or a plurality of organic films 4 having a narrow band gap and, when a bias voltage is applied across the electrodes 6 and 2, electrons and holes injected into the first and second organic films from the first and second electrodes, respectively, are enclosed in the light emitting layer. Therefore, light emission efficiently takes place in the light emitting layer due to the recombination of the carriers.
COPYRIGHT: (C)1991,JPO&Japio
JP2510090A 1990-02-06 1990-02-06 Organic-film light emitting element Pending JPH03230583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2510090A JPH03230583A (en) 1990-02-06 1990-02-06 Organic-film light emitting element

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2510090A JPH03230583A (en) 1990-02-06 1990-02-06 Organic-film light emitting element
EP90303351A EP0390551B1 (en) 1989-03-31 1990-03-29 Organic electroluminescent device
DE1990627697 DE69027697D1 (en) 1989-03-31 1990-03-29 An organic electroluminescent device
DE1990627697 DE69027697T2 (en) 1989-03-31 1990-03-29 An organic electroluminescent device
US07/921,379 US5294810A (en) 1989-03-31 1992-07-30 Organic electroluminescent device

Publications (1)

Publication Number Publication Date
JPH03230583A true JPH03230583A (en) 1991-10-14

Family

ID=12156509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2510090A Pending JPH03230583A (en) 1990-02-06 1990-02-06 Organic-film light emitting element

Country Status (1)

Country Link
JP (1) JPH03230583A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996004687A1 (en) * 1994-08-05 1996-02-15 Hoechst Aktiengesellschaft Organic light emitting diode using p-n junction
WO1999053727A1 (en) * 1998-04-09 1999-10-21 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
JP2001291592A (en) * 2000-01-31 2001-10-19 Semiconductor Energy Lab Co Ltd Light emission device and electric fixture
US6489638B2 (en) 2000-06-23 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6677621B2 (en) 2000-05-22 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electrical appliance
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7372199B2 (en) 2000-08-28 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and image playback device having triplet and singlet compounds in electroluminescent layer
US7400087B2 (en) 2000-06-05 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996004687A1 (en) * 1994-08-05 1996-02-15 Hoechst Aktiengesellschaft Organic light emitting diode using p-n junction
WO1999053727A1 (en) * 1998-04-09 1999-10-21 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
US6617054B2 (en) 1998-04-09 2003-09-09 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
JP4592967B2 (en) * 2000-01-31 2010-12-08 株式会社半導体エネルギー研究所 Light emitting device and electric appliance
JP2001291592A (en) * 2000-01-31 2001-10-19 Semiconductor Energy Lab Co Ltd Light emission device and electric fixture
US6677621B2 (en) 2000-05-22 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electrical appliance
US8907559B2 (en) 2000-06-05 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display portion with plural pixels
US9564472B2 (en) 2000-06-05 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7400087B2 (en) 2000-06-05 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers
US9917141B2 (en) 2000-06-05 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having singlet and triplet compounds
US7915808B2 (en) 2000-06-05 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device including EL elements for emitting lights of different colors
US10192934B2 (en) 2000-06-05 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having light emission by a singlet exciton and a triplet exciton
US8304985B2 (en) 2000-06-05 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having singlet and triplet compounds with different emission colors
US9362343B2 (en) 2000-06-05 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Iridium-containing active-matrix EL display module
US8674599B2 (en) 2000-06-05 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having fluorescence and phosphoresence compound
US10446615B2 (en) 2000-06-05 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US6489638B2 (en) 2000-06-23 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8975813B2 (en) 2000-08-28 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8415876B2 (en) 2000-08-28 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and display comprising light emitting device
US7372199B2 (en) 2000-08-28 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and image playback device having triplet and singlet compounds in electroluminescent layer
US8049418B2 (en) 2000-08-28 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising triplet compound in electroluminescent layer

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