JPH03227034A - Wafer foreign substance inspecting device - Google Patents

Wafer foreign substance inspecting device

Info

Publication number
JPH03227034A
JPH03227034A JP2347390A JP2347390A JPH03227034A JP H03227034 A JPH03227034 A JP H03227034A JP 2347390 A JP2347390 A JP 2347390A JP 2347390 A JP2347390 A JP 2347390A JP H03227034 A JPH03227034 A JP H03227034A
Authority
JP
Japan
Prior art keywords
foreign substances
signals
wafer
pattern
waveform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2347390A
Other languages
Japanese (ja)
Inventor
Hisafumi Miyatake
宮竹 尚史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2347390A priority Critical patent/JPH03227034A/en
Publication of JPH03227034A publication Critical patent/JPH03227034A/en
Pending legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To make it possible to identify reliably the presence or absence of adhesion of foreign substances by a method wherein one scanning waveform pattern converted by a photodetector is stored and thereafter, an irregular pulse waveform and a pulse waveform, has a regularity, but has a high peak level, which exist in the pattern, are decided as pulse waveforms due to the foreign substances. CONSTITUTION:A laser oscillator 1 is slanted at a proper angle and is fixed, a wafer 3 and the oscillator 1 are moved relatively to each other and the oscillator 1 is moved to scan the surface of the wafer. At this time, reflected light complemented by a photodetector 4 is converted into a current and the current is outputted as a current waveform. This output signal is temporarily stored in a signal storage circuit 5 in every one scanning and is sent to a signal decision circuit 6. Here, in the case foreign substances adhere on a chip 7 and there are foreign substances 9 existing except foreign substances existing t pattern edges, the foreign substances 9 appear as signals 12 due to the foreign substances 9 existing except those existing at the pattern edges. As the waveforms of these signals 12 have not a regular period, the circuit 6 decides the signals 12 as signals due to the foreign substances 9. When the foreign substances are adhered on the pattern edge parts, signals due to the foreign substances overlap with signals 11 due to the pattern edges and appear as signals 13 due to the foreign substances existing at the pattern edge parts. As the peak level of the waveforms of these signals 13 is higher than that of the waveforms of the signals 11, the signals 13 are decided as signals due to the foreign substances.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、−主面に回路素子あるいはレジスト膜等のパ
ターンが形成されたウェーハの面に異物があるかないか
を検査するウェーハ異物検査装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides: - A wafer foreign matter inspection device for inspecting the presence or absence of foreign matter on the surface of a wafer on which a pattern such as a circuit element or a resist film is formed on the main surface. Regarding.

〔従来の技術〕[Conventional technology]

従来、この種のウェーハ異物検査装置は、図面には示さ
ないが、レーザ光をパターンが形成されたウェーハ面に
照射するとともにこのウェーハと相対的に移動すること
により前記ウェーハ面を走査するレーザ発信器と、前記
ウェーハ面より反射散乱光を補足するとともに前記反射
散乱光を光電流に変換する受光素子とを有していた。
Conventionally, although not shown in the drawings, this type of wafer foreign object inspection equipment has a laser beam that irradiates a wafer surface on which a pattern is formed and scans the wafer surface by moving relative to the wafer. and a light-receiving element that captures reflected and scattered light from the wafer surface and converts the reflected and scattered light into photocurrent.

このウェーハ異物検査装置で、回路パターンが形成され
たウェーハを検査する場合、まず、この回路パターンの
段差部で散乱光がより反射し易いように、レーザ発振器
のウェーハ面に対する傾きを調整し、次に、ウェーハ面
をレーザ光を走査し、その反射散乱光を受光素子で補足
し、この光電流波形をオッシロスコープに写し出して、
不規則の周期で現れるパルスを異物として判定してぃ人
〔発明が解決しようとする課題〕 しかしながら、上述した従来のウェーハ異物杉査装置で
は、単に、規則的に現れるパルス波形をパターンの段差
と判断し、不規則に現れるパルス波形と異物と判断して
いるので、段差部と異物との差異を明確するために、受
光素子の感度を落して検査した場合には、段差部による
波形のみ山積し、異物による波形が出現しながったりし
て正確な検査が出来ないという欠点がある。また、感度
を上げてウェーハを検査する場合で、しかも段差部に異
物がある場合、規則的な波形に異物による波形が重なり
、異物が有無を判別し難いという欠点がある。
When inspecting a wafer on which a circuit pattern is formed using this wafer foreign object inspection device, first, the inclination of the laser oscillator with respect to the wafer surface is adjusted so that the scattered light is more easily reflected at the stepped portion of the circuit pattern, and then First, the wafer surface is scanned with a laser beam, the reflected and scattered light is captured by a photodetector, and this photocurrent waveform is projected onto an oscilloscope.
[Problem to be solved by the invention] However, the above-mentioned conventional wafer foreign object detection apparatus simply identifies regularly appearing pulse waveforms as pattern steps. Since the pulse waveform that appears irregularly is determined to be a foreign object, when the sensitivity of the light receiving element is lowered and the inspection is performed to clarify the difference between the step and the foreign object, only the waveform due to the step is piled up. However, it has the disadvantage that accurate inspection cannot be performed because waveforms due to foreign objects may not appear. In addition, when inspecting a wafer with increased sensitivity and there is a foreign object on a stepped portion, the waveform caused by the foreign object overlaps the regular waveform, making it difficult to determine whether there is a foreign object.

本発明の目的は、かがる欠点を解消し、異物の付着の有
無を確実に識別できるウェーハ異物検査装置を提供する
ことである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer foreign matter inspection device that eliminates the drawback of smearing and can reliably identify the presence or absence of foreign matter.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のウェーハ異物検査装置は、レーザ光をパターン
が形成されたウェーハ面に照射するとともにこのウェー
ハと相対的に移動することにより前記ウェーハ面を走査
するレーザ発振器と、前記ウェーハ面より反射散乱光を
補足するとともに前記反射散乱光を光電流に変換する受
光素子とを有するウェーハ異物検査装置において、レー
ザ光を走査するときに発生する光電流波形パターンを記
憶する信号記憶回路と、この得られた光電流波形パター
ンにおける周期の不規則及びレベル強度の違いで現われ
る光電流パルス波形を異物によるものと判定する信号判
定回路とを備え構成される。
The wafer foreign matter inspection apparatus of the present invention includes a laser oscillator that irradiates a patterned wafer surface with a laser beam and scans the wafer surface by moving relative to the wafer, and a laser oscillator that scans the wafer surface by moving relative to the wafer, and a laser oscillator that scans the wafer surface by scanning the wafer surface with a laser beam, and In a wafer foreign matter inspection apparatus having a light receiving element that supplements the reflected and scattered light and converts the reflected and scattered light into a photocurrent, a signal storage circuit that stores a photocurrent waveform pattern generated when scanning a laser beam, and a signal storage circuit that stores the photocurrent waveform pattern generated when scanning a laser beam, and The apparatus includes a signal determination circuit that determines that a photocurrent pulse waveform that appears due to an irregular period and a difference in level intensity in a photocurrent waveform pattern is caused by a foreign object.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明のウェーハ異物検査装置の一実施例を示
すブロック図である。このウェーハ異物検査装置は、第
1図に示すように、レーザ光をミラー2で反射し、回路
パターンが形成されたつ工−ハ3面に照射するとともに
このウェーハ3と相対的に移動することに上りウェーハ
3の面を走査するレーザ発振器1と、ウェーハ3面より
反射散乱光を補足するとともに前記反射散乱光を光電流
に変換する受光素子4と、レーザ光を走査するときに発
生する光電流波形パターンを記憶する信号記憶回路5と
、この得られた光電流波形パターンにおける周期の不規
則及びレベル強度の違いで現われる光電流パルス波形を
異物によるものと判定する信号判定回路6とを備えてい
る。
FIG. 1 is a block diagram showing an embodiment of the wafer foreign matter inspection apparatus of the present invention. As shown in Fig. 1, this wafer foreign object inspection device reflects a laser beam with a mirror 2, irradiates it onto a 3 surface of a process fer on which a circuit pattern is formed, and moves the laser beam relative to the wafer 3. A laser oscillator 1 that scans the surface of the upstream wafer 3, a light receiving element 4 that captures reflected and scattered light from the wafer 3 surface and converts the reflected and scattered light into a photocurrent, and a photocurrent that is generated when scanning the laser light. It includes a signal storage circuit 5 that stores waveform patterns, and a signal determination circuit 6 that determines that a photocurrent pulse waveform that appears due to irregular periods and differences in level intensity in the obtained photocurrent waveform pattern is caused by a foreign object. There is.

第2図は第1図のウェーハ異物検査装置の動作を説明す
るためのウェーハ上のパターンとこのパターンを走査し
たときの波形図である。次に、このウェーハ異物検査装
置の動作を説明する。ここで、第2図に示すウェーハ上
の部分領域であるチップ7上に貰物があるか否がを検査
した例で説明する。まず、適切な角度に傾むけてレーザ
発振器1を固定し、ウェーハ3とレーザ発振器1とを相
対的に移動してウェーハ面に走査する。このことにより
受光素子4に補足された反射光は、電流に変換され、電
流波形として出方される。この出方信号は一走査毎に信
号記憶回路5に一時的に記憶され、次の信号が入力され
ると、前の走査による波形信号は信号判定回路6に送ら
れる。このように順次に走査すると、第2図に示すよう
に、パターン8の段差部は規則的周期でパターンエツジ
による信号11がパルス状の波形として出現する。
FIG. 2 is a pattern on a wafer and a waveform diagram when scanning this pattern to explain the operation of the wafer foreign matter inspection apparatus shown in FIG. Next, the operation of this wafer foreign matter inspection apparatus will be explained. Here, an example will be described in which whether or not there is a gift on the chip 7, which is a partial area on the wafer shown in FIG. 2, is inspected. First, the laser oscillator 1 is fixed at an appropriate angle, and the wafer 3 and the laser oscillator 1 are moved relatively to scan the wafer surface. As a result, the reflected light captured by the light receiving element 4 is converted into a current and output as a current waveform. This output signal is temporarily stored in the signal storage circuit 5 for each scan, and when the next signal is input, the waveform signal from the previous scan is sent to the signal determination circuit 6. When scanning is performed sequentially in this manner, as shown in FIG. 2, the signal 11 due to the pattern edges appears as a pulse-like waveform in the stepped portion of the pattern 8 at regular intervals.

このように、ウェーハ3の面を順次走査し、検査を完了
する。
In this way, the surface of the wafer 3 is sequentially scanned to complete the inspection.

ここで、チップ7に異物が付着していると、つ工−ハの
チップにレーザ光を走査したとき、パターンエツジ以外
にある異物9がある場合は、パターンエツジ以外にある
異物による信号12として現われる。この波形は規則的
な周期をもっていないから、信号判定回路6は異物と判
定する。また、パターンエツジ部に貰物が付着したとき
は、パターンエツジによる信号11と重なりパターンエ
ツジ部にある異物による信号13として現われる。
Here, if there is a foreign substance attached to the chip 7, when the laser beam is scanned on the chip of the tool C, if there is a foreign substance 9 other than the pattern edge, a signal 12 due to the foreign substance other than the pattern edge will be detected. appear. Since this waveform does not have a regular period, the signal determination circuit 6 determines that it is a foreign object. Further, when a gift adheres to the pattern edge, it overlaps with the signal 11 due to the pattern edge and appears as a signal 13 due to the foreign object present at the pattern edge.

この波形はパターンエツジによる信号11と重なった信
号になるが、パターンエツジによる信号よりピークレベ
ルが高いので信号判定回路6は異物と判定する。
This waveform becomes a signal that overlaps with the signal 11 due to the pattern edge, but since the peak level is higher than the signal due to the pattern edge, the signal determination circuit 6 determines that it is a foreign object.

第3図は本発明の他の実施例を示すウェーハ異物検査装
置のブロック図である。このウェーハ異物検査装置は、
あらかじめ、異物の付着していないチップを走査したと
きに得られる波形パターンを記憶するパターン信号記憶
回路14を設けたことである。それ以外は、前述の実施
例と同じである。
FIG. 3 is a block diagram of a wafer foreign matter inspection apparatus showing another embodiment of the present invention. This wafer foreign matter inspection equipment is
A pattern signal storage circuit 14 is provided in advance to store a waveform pattern obtained when a chip to which no foreign matter is attached is scanned. The rest is the same as the previous embodiment.

このウェーハ異物検査装置で、ウェーハ面の異物の有無
を検査するときは、レーザ光で一走査毎に得られる波形
パターンを、パターン信号記憶回路14に記憶された波
形パターンと比較して信号判定回路6で異物の有無を判
定するものである。
When inspecting the presence or absence of foreign matter on the wafer surface with this wafer foreign matter inspection device, the signal judgment circuit compares the waveform pattern obtained for each scan with the laser beam with the waveform pattern stored in the pattern signal storage circuit 14. 6, the presence or absence of foreign matter is determined.

この実施例のウェーハ異物検査装置は、あらかじめパタ
ーンエツジからの信号波形を記憶されているので、ウェ
ーハを複数枚検査をする場合、連続的に短時間で検査で
きるという利点がある。
Since the wafer foreign matter inspection apparatus of this embodiment stores the signal waveform from the pattern edge in advance, it has the advantage that when inspecting a plurality of wafers, it can be inspected continuously in a short time.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ウェーハ面をレーザ光で
走査し、ウェーハ面の段差あるいは異物より反射する散
乱光を補足する受光素子を設け、この受光素子で変換さ
れた一走査波形パターンを記憶する信号記憶回路を設け
、この信号記憶回路の一走査波形パターン中にある不規
則性パルス波形及び規則性があるがピークレベルの高い
パルス波形を異物であると判定する信号判定回路を設け
ることによって、異物の有無を確実に識別出来るウェー
ハ異物検査装置が得られるという効果がある。
As explained above, the present invention scans the wafer surface with laser light, provides a light receiving element that captures the scattered light reflected from steps or foreign objects on the wafer surface, and stores the one-scan waveform pattern converted by this light receiving element. By providing a signal storage circuit that detects foreign objects, and providing a signal determination circuit that determines irregular pulse waveforms and regular but high peak level pulse waveforms in one scanning waveform pattern of this signal storage circuit as foreign objects. This has the effect of providing a wafer foreign matter inspection device that can reliably identify the presence or absence of foreign matter.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のウェーハ異物検査装置の一実施例を示
すブロック図、第2図は第1図のウェーハ異物検査装置
の動作を説明するためのウェーハ上のパターンとこのパ
ターンを走査したときの波形図、第3図は本発明の他の
実施例を示すウェーハ異物検査装置のブロック図である
。 1・・・レーザ発振器、2・・−ミラー 3・・・ウェ
ーハ4・・・受光素子、5・・・信号記憶回路、6・・
・信号判定回路、7・・・チップ、8・・・パターン、
9・・・パターンエツジ以外ある異物、10−パターン
エツジ部にある異物、11・・・パターンエツジにより
信号、12・−・パターンエツジ以外にある異物による
信号、13・・・パターンエツジ部にある異物による信
号、14・・・パターン信号記憶回路。
FIG. 1 is a block diagram showing an embodiment of the wafer foreign matter inspection apparatus of the present invention, and FIG. 2 shows a pattern on a wafer and a time when this pattern is scanned to explain the operation of the wafer foreign matter inspection apparatus of FIG. 1. FIG. 3 is a block diagram of a wafer foreign matter inspection apparatus showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Laser oscillator, 2...-Mirror 3... Wafer 4... Light receiving element, 5... Signal storage circuit, 6...
・Signal judgment circuit, 7...chip, 8...pattern,
9--Foreign object other than the pattern edge, 10-Foreign object at the pattern edge, 11--Signal due to pattern edge, 12--Signal due to foreign object other than the pattern edge, 13-- Foreign object at pattern edge Signal due to foreign matter, 14... Pattern signal storage circuit.

Claims (1)

【特許請求の範囲】[Claims] レーザ光をパターンが形成されたウェーハ面に照射する
とともにこのウェーハと相対的に移動することにより前
記ウェーハ面を走査するレーザ発振器と、前記ウェーハ
面より反射散乱光を補足するとともに前記反射散乱光を
光電流に変換する受光素子とを有するウェーハ異物検査
装置において、レーザ光を走査するときに発生する光電
流波形パターンを記憶する信号記憶回路と、この得られ
た光電流波形パターンにおける周期の不規則及びレベル
強度の違いで現われる光電流パルス波形を異物によるも
のと判定する信号判定回路とを備えることを特徴とする
ウェーハ異物検査装置。
a laser oscillator that irradiates a patterned wafer surface with laser light and scans the wafer surface by moving relative to the wafer; and a laser oscillator that captures reflected and scattered light from the wafer surface and removes the reflected and scattered light In a wafer foreign matter inspection apparatus having a light receiving element that converts into a photocurrent, there is provided a signal storage circuit that stores a photocurrent waveform pattern generated when scanning a laser beam, and an irregular period in the obtained photocurrent waveform pattern. and a signal determination circuit that determines that a photocurrent pulse waveform that appears due to a difference in level intensity is caused by a foreign substance.
JP2347390A 1990-01-31 1990-01-31 Wafer foreign substance inspecting device Pending JPH03227034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2347390A JPH03227034A (en) 1990-01-31 1990-01-31 Wafer foreign substance inspecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2347390A JPH03227034A (en) 1990-01-31 1990-01-31 Wafer foreign substance inspecting device

Publications (1)

Publication Number Publication Date
JPH03227034A true JPH03227034A (en) 1991-10-08

Family

ID=12111502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2347390A Pending JPH03227034A (en) 1990-01-31 1990-01-31 Wafer foreign substance inspecting device

Country Status (1)

Country Link
JP (1) JPH03227034A (en)

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