JPH03225886A - Surface emission semiconductor laser array - Google Patents
Surface emission semiconductor laser arrayInfo
- Publication number
- JPH03225886A JPH03225886A JP2021275A JP2127590A JPH03225886A JP H03225886 A JPH03225886 A JP H03225886A JP 2021275 A JP2021275 A JP 2021275A JP 2127590 A JP2127590 A JP 2127590A JP H03225886 A JPH03225886 A JP H03225886A
- Authority
- JP
- Japan
- Prior art keywords
- lambdao
- surface emission
- semiconductor
- wavelength
- sectional area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 abstract description 9
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000003491 array Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は大容量の光通信や光情報処理に利用できる面発
光半導体レーザアレイに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a surface-emitting semiconductor laser array that can be used in large-capacity optical communications and optical information processing.
（従来の技術）
基板に垂直方向に発振する複数個の面発光半導体レーザ
アレイは小型で２次元集積化が可能であることから、超
並列の光通信や光画像処理に不可欠なキーデバイスと考
えられる。面発光半導体レーザとしては広義には共振器
が基板に平行に形成され４５度ミラーによって垂直方向
に光を取り出すタイプも含まれるが、ここで言う面発光
半導体レーザは基板に垂直方向に共振器が形成されたタ
イプをいう。この様な面発光レーザを用いたレーザアレ
イがエレクトロニクスレターズ（Ｅｌｅｃｔｏｒｏｎｉ
ｃｓＬｅｔｔｅｒｓ）２５巻２０号１３７７〜１３７８
頁、１９８９年に記載されている。(Prior technology) Multiple surface-emitting semiconductor laser arrays that oscillate in a direction perpendicular to the substrate are small and can be integrated two-dimensionally, so they are considered to be key devices essential for massively parallel optical communication and optical image processing. It will be done. In a broad sense, surface-emitting semiconductor lasers include types in which a resonator is formed parallel to a substrate and a 45-degree mirror extracts light in the vertical direction, but the surface-emitting semiconductor laser referred to here has a resonator formed in a direction perpendicular to the substrate. Refers to the type formed. A laser array using such a surface-emitting laser is called Electronics Letters.
csLetters) Volume 25, No. 20, 1377-1378
Page, 1989.
（発明が解決しようとする課題）
光通信の特徴の一つは異なる波長の複数の光信号を光信
号を光ファイバーで同時に伝送できることである。従っ
て波長の数だけ多重度を上げることができ、大容量の光
通信が可能となる。そのためには異なる波長の複数個の
光源が必要となる。(Problems to be Solved by the Invention) One of the characteristics of optical communication is that a plurality of optical signals of different wavelengths can be transmitted simultaneously through optical fibers. Therefore, the multiplicity can be increased by the number of wavelengths, and large-capacity optical communication becomes possible. This requires multiple light sources with different wavelengths.
このような多波長光源は光情幸艮処理の分野でも有用で
ある。発光素子を多数個集積した上述の多波長光源とし
て小型でコンパクトな面発光半導体レーザアレイが適し
ている。しかし多波長化する実用的な手段はこれまでな
かった。例えば必要な波長の数だけ結晶成長する方法が
考えられるが、数回以上成長すると成長層の品質が劣化
したり、きれいに成長するのが難しくなり歩留りが悪く
なるという問題があった。本発明の目的は並列光伝送や
光情報処理に適ししかも多波長光源として利用できる面
発光半導体レーザアレイを提供することにある。Such a multi-wavelength light source is also useful in the field of optical entertainment processing. A small and compact surface emitting semiconductor laser array is suitable as the above-mentioned multi-wavelength light source in which a large number of light emitting elements are integrated. However, until now there has been no practical means of increasing the number of wavelengths. For example, a method of growing crystals for the required number of wavelengths is conceivable, but if the crystals are grown more than a few times, the quality of the grown layer deteriorates, or it becomes difficult to grow neatly, resulting in poor yields. An object of the present invention is to provide a surface-emitting semiconductor laser array suitable for parallel optical transmission and optical information processing and which can be used as a multi-wavelength light source.
（課題を解決するための手段）
本発明の面発光半導体レーザアレイは活性層と半導体多
層膜の反射鏡を備えた複数個の面発光レーザからなる半
導体面発光レーザアレイにおいて各面発光レーザの少な
くとも１つの面発光レーザの断面積が他の面発光レーザ
の断面積と異なっていることを特徴とする。(Means for Solving the Problems) A surface-emitting semiconductor laser array of the present invention includes a plurality of surface-emitting lasers each having an active layer and a reflecting mirror made of a semiconductor multilayer film. It is characterized in that the cross-sectional area of one surface-emitting laser is different from the cross-sectional area of the other surface-emitting lasers.
（作用ン まず従来の面発光レーザの設計方法について説明する。(Action First, a conventional method for designing a surface emitting laser will be explained.
第４図（ス賽導体多層膜からなる反射鏡を上下に持つ典
型的な面発光半導体レーザの構造断面図である。反射鏡
としては誘電体膜多層膜によるものもあるが、半導体多
層膜の方が熱膨張係数の違いによるストレス等がないの
で信頼性が損なわれない利点がある。第４図の面発光レ
ーザの設計では１．半導体多層膜１１の断面積を設定し
活性層１３の利得の中心波長λ０での共振器方向の有効
屈折率ｎｅを求める。半導体多層膜１１と１２はそれぞ
れ屈折率の異なる２つの半導体層を交互に積層し、各半
導体層の層厚はλｏ／４ｎｅとする。また半導体多層膜
１１と１２の間隔はλｏ／２ｎｅの整数倍となるように
している。このようにして波長λ０での発振に対し低閾
値化が可能となる。Figure 4 is a cross-sectional view of the structure of a typical surface-emitting semiconductor laser that has reflective mirrors made of semiconductor multilayer films on the upper and lower sides.Some reflective mirrors are made of dielectric multilayer films, but This has the advantage that reliability is not compromised because there is no stress caused by differences in thermal expansion coefficients.In the design of the surface emitting laser shown in FIG. Find the effective refractive index ne in the cavity direction at the center wavelength λ0.The semiconductor multilayer films 11 and 12 each have two semiconductor layers with different refractive indexes stacked alternately, and the layer thickness of each semiconductor layer is λo/4ne. Further, the distance between the semiconductor multilayer films 11 and 12 is set to be an integral multiple of λo/2ne.In this way, it is possible to lower the threshold value for oscillation at the wavelength λ0.
本発明の作用について説明する。半導体多層膜の最適層
厚λ。／４ｎｅは変えずにその断面積だけを変えること
により閾値の上昇をほとんど伴わずに、活性層の利得ス
ペクトル内で発振波長をλ０から変えることができる。The operation of the present invention will be explained. Optimal layer thickness λ of semiconductor multilayer film. By changing only the cross-sectional area without changing /4ne, the oscillation wavelength can be changed from λ0 within the gain spectrum of the active layer with almost no increase in the threshold value.
第３図を用いてその作用を説明する。The operation will be explained using FIG.
第３図に面発光レーザの基本横モードＨ１ｌに対する有
効屈折率ｎｅの断面積依存性を示す。ここでは円筒状の
面発光レーザとし活性層はＩｎＧａＡｓでその円筒の外
側は空気として計算した。ＩｎＧａＡｓを励起した時の
利得の中心波長入０は９８００人、その波長に対する円
筒内の半導体の屈折率を３．２５８とした。円筒の半径
をｒを横軸にｎを縦軸にとって示した。ｒがある一定値
（ここでは約２ｐｍ）より小さくなるとｎの値は低下す
る。そこで波長λと半径ｒを設定し半導体多層膜１１の
層厚を最適化した厚さ八〇／４ｎｅとしたあと、面発光
レーザにおいて半径を設定値ｒＱからずらしたｒ（ｒ：
Ｆｒ□）とする。そうするとｒが２μｍより小さい領域
では有効屈折率ｎｅが変化するので最適波長λ′に変化
する。利得スペクトルの波長依存性がλ０を中心にある
範囲で平坦な特性を持っているとすると、半径即ち断面
積を変えることによりこの範囲で閾値電流密度を一定に
保ったまま発振波長を変えることができる。有効屈折率
の変化と断面積の関係は材料や形状により異なるので、
断面積の減少により有効屈折率の変化する領域を最適化
して用いればよい。FIG. 3 shows the dependence of the effective refractive index ne on the cross-sectional area with respect to the fundamental transverse mode H1l of the surface emitting laser. Here, calculations were made assuming that a cylindrical surface emitting laser is used, the active layer is InGaAs, and the outside of the cylinder is air. When InGaAs is excited, the center wavelength of gain 0 is 9800, and the refractive index of the semiconductor inside the cylinder with respect to that wavelength is 3.258. The radius of the cylinder is shown with r as the horizontal axis and n as the vertical axis. When r becomes smaller than a certain value (approximately 2 pm here), the value of n decreases. Therefore, after setting the wavelength λ and radius r and setting the layer thickness of the semiconductor multilayer film 11 to an optimized thickness of 80/4ne, the radius was shifted from the set value rQ in the surface emitting laser to r(r:
Fr□). Then, in a region where r is smaller than 2 μm, the effective refractive index ne changes, so the optimum wavelength λ' changes. Assuming that the wavelength dependence of the gain spectrum has a flat characteristic within a certain range centered around λ0, it is possible to change the oscillation wavelength while keeping the threshold current density constant within this range by changing the radius, that is, the cross-sectional area. can. The relationship between changes in effective refractive index and cross-sectional area differs depending on the material and shape, so
It is sufficient to optimize and use the region where the effective refractive index changes as the cross-sectional area decreases.
そこで本発明によれば、他の構成要件は同じで断面積を
変えた面発光レーザを同一半導体基板上に複数個形成す
ることにより異なる波長で発振するレーザアレイが実現
できる。その波長を適当に選ぶことにより波長多重伝送
や多波長での光情報処理を行うことができる。Therefore, according to the present invention, a laser array that oscillates at different wavelengths can be realized by forming a plurality of surface emitting lasers having different cross-sectional areas with the same other constituent elements on the same semiconductor substrate. By appropriately selecting the wavelength, wavelength multiplex transmission and optical information processing using multiple wavelengths can be performed.
（実施例）
第１図は本発明の一実施例の面発光レーザアレイの中の
１つのレーザ構造を示したものである。第１図を参照し
ながら詳細に説明する。ｎ型ＧａＡｓ基板３０の上に、
ｎ型ＡｌＡｓ層３８（ドーピング濃度２刈い８ｃｍ−３
）とｎ型ＧａＡｓ層３９（ドーピング濃度２ Ｘ １０
１８ｃｍ−３）とを交互に各２０層積層しｎ型半導体多
層膜３１を形成する。各ＡｌＡｓとＧａＡｓの層厚はと
もにλｏ／４ｎｅとした。続いてｎ型Ａｌ□、５Ｇａ□
、５Ａｓ３２（ドーピング濃度ｌＸ１０１７ｃｍ−３）
、層厚１００ＡのＩｎ□、２ＧａＯ，ＢＡｓ活性層３３
、ｎ型Ａｌｏ、５Ｇａｏ、５Ａｓ３２と同じ層厚のｐ型
Ａ１０．５Ｇａ□、５Ａｓ３４（ドーピング濃度ｌＸ１
０１７ｃｍ ”）、層厚λ。１４ｎｅのｐ型ＧａＡｓ層
４０（ドーピング濃度２刈０１８ｃｍ−３）とｐ型Ａｌ
Ａｓ層４１（ドーピング濃度２×１０１８ｃｍ−３）と
を交互にそれぞれ２０層積層したｐ型半導体多層膜３５
、層厚０．１μｍのｐ型ＧａＡｓコンタクト層４２（ド
ーピング濃度１刈０１９ｃｍ−３、Ｂｅドープ）をエピ
タキシャル成長により形成する。次にｎ型電極３６、ｐ
型電極３７を形成し、半径ｒ＝１．４ｐｍの円筒状にメ
サエッチングして素子が完成した。ｎ型半導体多層膜３
１の上端とｐ型半導体多層膜３５の下端との間隔はλ０
／２ｎ８の整数倍とした。この半導体多層膜３１と３５
により９９．９％近い反射率が得られた。この半導体多
層膜３１と３５の各層厚は円筒の半径ｒ＝（１）でのＩ
ｎ□、２Ｇａ□、ＢＡｓの利得の中心波長９８００人に
最適化されている。本来、半径ｒが十分大きければこの
波長で発振するが、半径を１．４ｐｍとすることにより
９７５０人で発振できた。発振閾値の上昇はなく波長を
変えることができた。(Embodiment) FIG. 1 shows the structure of one laser in a surface emitting laser array according to an embodiment of the present invention. This will be explained in detail with reference to FIG. On the n-type GaAs substrate 30,
n-type AlAs layer 38 (doping concentration 2, 8 cm-3
) and n-type GaAs layer 39 (doping concentration 2×10
The n-type semiconductor multilayer film 31 is formed by alternately stacking 20 layers of 18 cm-3). The layer thicknesses of each AlAs and GaAs were both λo/4ne. Next, n-type Al□, 5Ga□
, 5As32 (doping concentration lX1017cm-3)
, In□, 2GaO, BAs active layer 33 with a layer thickness of 100A
, p-type A10.5Ga□, 5As34 with the same layer thickness as n-type Alo, 5Gao, 5As32 (doping concentration lX1
017 cm”), a p-type GaAs layer 40 with a layer thickness λ.14ne (doping concentration 2018 cm-3) and a p-type Al
A p-type semiconductor multilayer film 35 in which 20 layers of As layers 41 (doping concentration 2×10 18 cm −3 ) are laminated alternately.
, a p-type GaAs contact layer 42 (doping concentration 1019 cm-3, Be doped) with a layer thickness of 0.1 μm is formed by epitaxial growth. Next, the n-type electrode 36, p
A mold electrode 37 was formed and mesa etched into a cylindrical shape with a radius r=1.4 pm to complete the device. N-type semiconductor multilayer film 3
The distance between the upper end of 1 and the lower end of p-type semiconductor multilayer film 35 is λ0
/2n8 as an integer multiple. These semiconductor multilayer films 31 and 35
A reflectance of nearly 99.9% was obtained. The thickness of each layer of the semiconductor multilayer films 31 and 35 is I when the radius of the cylinder is r=(1).
The center wavelength of the gain of n□, 2Ga□, and BAs is optimized to 9800. Originally, if the radius r was large enough, oscillation would occur at this wavelength, but by setting the radius to 1.4 pm, 9750 people could oscillate. The wavelength could be changed without increasing the lasing threshold.
第２図はこうして製作した面発光レーザアレイの平面図
である。ｎ型ＧａＡｓ基板５０上にメサ径の異なる面発
光レーザを６個を２列に配した。各レーザ５１゜５２、
５４．５５．５６のメサ半径はそれぞれ２．２．２．０
．１．８．１．６゜１．５．１．４ｐｍである。発振波
長は９８００〜９７５０人までの範囲で順に短波長にシ
フトした。各レーザは発振閾値などの特性の劣化はなく
良好に発振した。メサ径はエツチング時に自由に設定で
きるので１枚のウェハー中に複数個の異なる波長のアレ
イを得ることができる。また各レーザは１回の結晶成長
とプロセスで作られるので発振閾値や温度特性などは均
一で、あり、歩留りも良好であった。FIG. 2 is a plan view of the surface emitting laser array manufactured in this manner. Six surface emitting lasers with different mesa diameters were arranged in two rows on an n-type GaAs substrate 50. Each laser 51°52,
The mesa radius of 54, 55, and 56 is 2.2, 2.0 respectively.
．． 1.8.1.6°1.5.1.4pm. The oscillation wavelength shifted to shorter wavelengths in the range of 9,800 to 9,750 people. Each laser oscillated well without any deterioration in characteristics such as oscillation threshold. Since the mesa diameter can be freely set during etching, a plurality of arrays of different wavelengths can be obtained in one wafer. In addition, since each laser was made by one crystal growth and process, the oscillation threshold and temperature characteristics were uniform, and the yield was good.
本実施例ではアレイの個数は６個としたが何個でも同様
に容易に作製できる。また円形メサの形状としたがこれ
に限らず矩形等どんな形状でもよく、その場合は有効屈
折率が変化する領域で最適化すれば良い。In this embodiment, the number of arrays is six, but any number of arrays can be easily produced. Further, although the shape is a circular mesa, the shape is not limited to this, and any shape such as a rectangle may be used. In that case, optimization may be performed in a region where the effective refractive index changes.
（発明の効果）
本発明によれば素子径を最適値から意図的に変えること
により利得内で発振波長が異なる面発光レーザが得られ
るので、各レーザが異なる波長で発振しその他の特性は
均一な面発光レーザアレイを容易に歩留り良く得ること
ができる。更に一枚のウェハー中に複数個の異なるアレ
イを作ることもできるので生産性が高い利点がある。(Effects of the Invention) According to the present invention, surface emitting lasers with different oscillation wavelengths within the gain can be obtained by intentionally changing the element diameter from the optimum value, so each laser oscillates at a different wavelength and other characteristics are uniform. It is possible to easily obtain a surface-emitting laser array with a high yield. Furthermore, since a plurality of different arrays can be formed on one wafer, there is an advantage of high productivity.
第１図と第２図はそれぞれ本発明による面発光レーザの
断面図とそのアレイの平面図である。第３図は有効屈折
率の素子半径（断面積）依存性を表す図。第４図は典型
的な面発光レーザの構造断面図である。
１０−ｎ型半導体基板、１１．３１・・・ｎ型半導体多
層膜、１２、３５−ｐ型半導体多層膜、１３．３８・・
・活性層、１４．１５・・・電極、３０．５０−ｎ型Ｇ
ａＡｓ層、３２−ｎ型ＡｌＧａＡｓ層、３４、ｐ型Ａｌ
ＧａＡｓ層、４２・ｐ型ＧａＡｓ層、３６・ｎ型電極、
３７．ｐ型電極、３８・ｎ型ＡｌＡｓ層、３９−ｎ型Ｇ
ａＡｓ層、４０・ｐ型ＧａＡｓ層、４１・ｐ型ＡｌＡｓ
層、５１．５２゜５３、５４．５５．５６・・・面発光
レーザ。1 and 2 are a cross-sectional view of a surface emitting laser according to the present invention and a plan view of an array thereof, respectively. FIG. 3 is a diagram showing the dependence of the effective refractive index on the element radius (cross-sectional area). FIG. 4 is a structural sectional view of a typical surface emitting laser. 10-n-type semiconductor substrate, 11.31...n-type semiconductor multilayer film, 12, 35-p-type semiconductor multilayer film, 13.38...
・Active layer, 14.15... Electrode, 30.50-n type G
aAs layer, 32-n-type AlGaAs layer, 34, p-type Al
GaAs layer, 42・p-type GaAs layer, 36・n-type electrode,
37. p-type electrode, 38-n-type AlAs layer, 39-n-type G
aAs layer, 40.p-type GaAs layer, 41.p-type AlAs
Layer, 51.52°53, 54.55.56...Surface emitting laser.
Claims (1)
に共振器が形成された、複数個の面発光レーザからなる
半導体面発光レーザアレイにおいて各面発光レーザの少
なくとも１つの面発光レーザの断面積が他の面発光レー
ザの断面積と異なっていることを特徴とする面発光半導
体レーザアレイ。In a semiconductor surface emitting laser array consisting of a plurality of surface emitting lasers, each surface emitting laser has an active layer and a reflector made of a semiconductor multilayer film, and a resonator is formed in a direction perpendicular to the substrate surface. A surface-emitting semiconductor laser array characterized in that its cross-sectional area is different from that of other surface-emitting lasers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021275A JPH03225886A (en) | 1990-01-30 | 1990-01-30 | Surface emission semiconductor laser array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021275A JPH03225886A (en) | 1990-01-30 | 1990-01-30 | Surface emission semiconductor laser array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03225886A true JPH03225886A (en) | 1991-10-04 |
Family
ID=12050574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021275A Pending JPH03225886A (en) | 1990-01-30 | 1990-01-30 | Surface emission semiconductor laser array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03225886A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595469A1 (en) * | 1992-09-25 | 1994-05-04 | Nec Corporation | Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals |
-
1990
- 1990-01-30 JP JP2021275A patent/JPH03225886A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595469A1 (en) * | 1992-09-25 | 1994-05-04 | Nec Corporation | Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals |
| US5365540A (en) * | 1992-09-25 | 1994-11-15 | Nec Corporation | Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals |
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