JPH0322417A - Manufacturing apparatus for semiconductor device - Google Patents
Manufacturing apparatus for semiconductor deviceInfo
- Publication number
- JPH0322417A JPH0322417A JP15772489A JP15772489A JPH0322417A JP H0322417 A JPH0322417 A JP H0322417A JP 15772489 A JP15772489 A JP 15772489A JP 15772489 A JP15772489 A JP 15772489A JP H0322417 A JPH0322417 A JP H0322417A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- semiconductor
- tube
- semiconductor substrate
- furnace core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路の製造装置に関し、特にガス導
入部と開放部を有する円筒型炉芯管及び円筒型炉芯管を
外部より加熱する外部ヒーターを有する半導体基板の熱
処理装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor integrated circuit manufacturing apparatus, and particularly to a cylindrical furnace tube having a gas introduction section and an open section, and a cylindrical furnace tube that is heated from the outside. The present invention relates to a heat treatment apparatus for semiconductor substrates having an external heater.
従来、この種の熱処理装置は半導体基板の酸化や拡散の
工程で用いられているが、例えば酸化膜の形成に用いら
れるような熱処理装置では円筒型炉芯管を固定とし半導
体基板支持台をその内部に置き炉芯管の外部から外部ヒ
ーターで半導体基板を加熱し同時にガスを導入して酸化
膜を形戒していた。Conventionally, this type of heat treatment equipment has been used in the oxidation and diffusion processes of semiconductor substrates. For example, in heat treatment equipment used for forming oxide films, a cylindrical furnace core tube is fixed and a semiconductor substrate support is attached to the heat treatment equipment. The semiconductor substrate was heated by an external heater placed inside the furnace core tube from outside, and at the same time gas was introduced to form an oxide film.
ところが従来の装置では、外部ヒーターの出力ばらつき
により半導体基板の温度均一性が悪く半導体基板上に成
長する酸化膜の不均一な形成や拡散の不均一性の要因と
なっている。However, in the conventional apparatus, the temperature uniformity of the semiconductor substrate is poor due to variations in the output of the external heater, which causes non-uniform formation of an oxide film grown on the semiconductor substrate and non-uniform diffusion.
よって本発明の目的は半導体基板の温度均一性が良好な
熱処理装置を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a heat treatment apparatus with good temperature uniformity of a semiconductor substrate.
本発明の半導体集積回路の製造装置は、半導体基板支持
体固定機構を内部にもつ円筒形炉芯管と外部ヒーターに
対して円筒形炉芯管を回転させる駆動機構を有している
,
〔実施例〕
次に、本発明について図面を参照して説明する。第1図
および第2図を参照すると、本発明の一実施例の熱処理
装置は片側(図面右端)にガス導入部6を持ち反対側(
図面左側)は開放部となっている回転可能な炉芯管5と
、炉芯管5の周囲をとりかこむように固定配置された外
部ヒーター3と、モーター4と、モーター4からの駆動
力を用いて炉芯管を回転させる機構10とを有し、炉芯
管5の内壁には固定機構1が固定されそれに半導体基板
9の支持体2がひっかけ止めで固定されている。この装
置は、半導体基板支持体2を炉芯管内固定装置1に固定
したのちこれを外部ヒーター3で加熱し、駆動モーター
49回転駆動力により回転機構10を用いて炉芯管5を
第2図に示す角度Aだけ往復回転運動をおこなわせる。The semiconductor integrated circuit manufacturing apparatus of the present invention has a cylindrical furnace core tube having a semiconductor substrate support fixing mechanism therein, and a drive mechanism for rotating the cylindrical furnace core tube with respect to an external heater. Example] Next, the present invention will be explained with reference to the drawings. Referring to FIGS. 1 and 2, a heat treatment apparatus according to an embodiment of the present invention has a gas introduction section 6 on one side (the right end of the drawing) and the opposite side (the right end of the drawing).
The one on the left side of the figure uses a rotatable furnace core tube 5 which is an open part, an external heater 3 fixedly arranged to surround the furnace core tube 5, a motor 4, and the driving force from the motor 4. A fixing mechanism 1 is fixed to the inner wall of the furnace core tube 5, and a support 2 for a semiconductor substrate 9 is fixed thereto with a hook. This device fixes a semiconductor substrate support 2 to a fixing device 1 in a furnace core tube, heats it with an external heater 3, and uses a rotating mechanism 10 with the rotational driving force of a drive motor 49 to move a furnace core tube 5 as shown in FIG. A reciprocating rotational motion is performed by an angle A shown in .
これにより半導体基板上の温度均一性が向上する。支持
体2は角度Aの回転に対し半導体基板9が落ちないよう
な深さの皿状の収容部を持っている。This improves temperature uniformity on the semiconductor substrate. The support body 2 has a dish-shaped accommodating portion having such a depth that the semiconductor substrate 9 does not fall when rotated by an angle A.
第3図および第4図を参照すると、本発明の他の実施例
は第1図の実施例と比べて炉芯管5内壁にガス導入部6
から導入されたガスの攪拌用フィン7を取り付けたこと
および半導体基板支持体8を半導体基板9の全周囲をと
り囲む構造のものにした点で異なっている。本実施例で
は炉芯管5に360゜の回転運動をおこなわせることが
でき、フィン7の存在とあいまって導入ガスの循環性を
向上させ管内ガス濃度の均一化を保つことができ、半導
体基板上の温度均一性も向上する。Referring to FIGS. 3 and 4, another embodiment of the present invention is different from the embodiment shown in FIG.
The difference is that fins 7 for stirring the gas introduced from the substrate are attached, and that the semiconductor substrate support 8 has a structure that surrounds the entire periphery of the semiconductor substrate 9. In this embodiment, the furnace core tube 5 can be rotated by 360 degrees, which, together with the presence of the fins 7, can improve the circulation of the introduced gas and keep the gas concentration in the tube uniform. The temperature uniformity above is also improved.
以上説明したように、本発明は炉芯管を回転させること
により半導体基板上の温度を均一にする効果がある。さ
らに回転運動によって炉内ガス濃度が均一となり加えて
半導体基板面に常に新しいガスが接触する。これらのこ
とにより例えば、半導体基板上の酸化膜の均一な形戒を
促すことができる効果がある。As explained above, the present invention has the effect of making the temperature on the semiconductor substrate uniform by rotating the furnace core tube. Furthermore, the rotational movement makes the gas concentration in the furnace uniform, and in addition, new gas constantly comes into contact with the semiconductor substrate surface. These effects have the effect of, for example, promoting uniform formation of the oxide film on the semiconductor substrate.
第1図は本発明の一実施例の縦断面図、第2図はその横
断面図、第3図は本発明の他の実施例の縦断面図、第4
図はその横断面図である。
1・・・半導体基板支持体固定機構、2,8・・・半導
体基板支持体、3・・・外部ヒーター、4.駆動モータ
ー、5・・・円筒炉芯管、6・・・ガス導入部、7・・
・攪拌用フィン、9・・・半導体基板、10・・・回転
機構。FIG. 1 is a longitudinal cross-sectional view of one embodiment of the present invention, FIG. 2 is a cross-sectional view thereof, FIG. 3 is a longitudinal cross-sectional view of another embodiment of the present invention, and FIG.
The figure is a cross-sectional view thereof. 1... Semiconductor substrate support fixing mechanism, 2, 8... Semiconductor substrate support, 3... External heater, 4. Drive motor, 5... Cylindrical furnace core tube, 6... Gas introduction part, 7...
- Stirring fin, 9... semiconductor substrate, 10... rotating mechanism.
Claims (1)
ターにより熱する機構を備えた半導体装置の製造装置に
おいて、半導体基板を収容する半導体支持体を円筒型炉
芯管内で該炉芯管に固定する機構と前記円筒型炉芯管を
外部ヒーターに対して相対的に回転させる機構とを有す
ることを特徴とする半導体装置の製造装置。In a semiconductor device manufacturing apparatus equipped with a mechanism for heating a cylindrical furnace core tube having a gas introduction part and an open part with an external heater, a semiconductor support body housing a semiconductor substrate is placed inside the cylindrical furnace core tube. 1. An apparatus for manufacturing a semiconductor device, comprising: a mechanism for fixing the cylindrical furnace core tube to an external heater; and a mechanism for rotating the cylindrical furnace core tube relative to an external heater.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15772489A JPH0322417A (en) | 1989-06-19 | 1989-06-19 | Manufacturing apparatus for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15772489A JPH0322417A (en) | 1989-06-19 | 1989-06-19 | Manufacturing apparatus for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0322417A true JPH0322417A (en) | 1991-01-30 |
Family
ID=15655982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15772489A Pending JPH0322417A (en) | 1989-06-19 | 1989-06-19 | Manufacturing apparatus for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0322417A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04299828A (en) * | 1991-03-28 | 1992-10-23 | Shin Etsu Handotai Co Ltd | Semiconductor substrate treatment device |
-
1989
- 1989-06-19 JP JP15772489A patent/JPH0322417A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04299828A (en) * | 1991-03-28 | 1992-10-23 | Shin Etsu Handotai Co Ltd | Semiconductor substrate treatment device |
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