JPH03219626A - Manufacturing apparatus of semiconductor device - Google Patents

Abstract

PURPOSE:To eliminate that the uniformity of an etching operation is dropped extremely and affects an etching shape or the like inside a face by a method wherein a mesh sheet is arranged inside an etching chamber to obtain the symmetry inside the chamber. CONSTITUTION:A mesh-shaped member 108 composed of the same material as that of a reaction chamber is provided in a part which is not symmetric inside the chamber. Since the inside of an etching chamber can be kept symmetric and the RF power is exerted uniformly on an etching sample, the uniformity of an etching operation is not dropped extremely and it is possible to execute the etching operation which does not affect an etching shape or the like inside a face.

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly to a structure of a reaction chamber in a semiconductor device etching apparatus using vacuum and a semiconductor device manufacturing method using the same.

[Conventional technology]

A conventional semiconductor device manufacturing apparatus had a structure as shown in FIG. lot is a container of the reaction chamber, 102 is a gas inlet, 103 is an exhaust port, 104 is a wafer stage, 105 is a wafer, 106 is an RF unit, 107
is the port for the end point monitor. The arrangement emphasizes symmetry in order to achieve etching uniformity. For example, when etching photoresist with this equipment at a pressure of 400 mTorr, oxygen flowing at 2005 C'CM as a reaction gas, and an RF power of 2 W/cm2, the etching rate becomes low near the port for the end point monitor. This is thought to be because the area of the wall surface of the reaction chamber changes at the port portion. Table 1 shows the conditions and etching characteristics at this time. Table 1 [Problems to be solved by the invention] However, in the prior art described above, the symmetry of the wall surface of the reaction chamber is important, and if the area of the wall surface of the reaction chamber changes, the uniformity of etching deteriorates extremely, and etching within the surface becomes uneven. The problem is that it affects the shape, etc. The present invention is intended to solve these problems, and its purpose is to provide a semiconductor device that does not significantly degrade the etching uniformity and does not affect the in-plane etching shape. The present invention provides a manufacturing apparatus and a method for manufacturing a semiconductor device. [Means for Solving the Problems] (1) The semiconductor device manufacturing apparatus and the semiconductor device manufacturing method of the present invention include manufacturing a semiconductor device in which a reaction chamber is kept in a vacuum and a reaction gas is introduced to etch the semiconductor device. The apparatus is characterized in that the asymmetrical portion of the reaction chamber has a mesh member made of the same material as the reaction chamber. [Function] According to the above structure of the present invention, since the inside of the etching chamber can be kept symmetrical, the RF power is evenly applied to the etching sample, so the uniformity of etching does not deteriorate significantly, and the etching within the plane is improved. Etching is possible without affecting the shape. [Embodiment] FIG. 1 is a configuration diagram showing an embodiment of a semiconductor device manufacturing apparatus according to an embodiment of the present invention, 101 is a container of a reaction chamber, 102 is a gas inlet, and 103 is an exhaust port. , 104 is a wafer stage, 105 is a wafer, 106 is an RF unit, 107 is a port for end point monitoring, and 108 is a mesh plate. With this device, for example, the pressure can be set to 400 mTo.
rr, flowing 200SCCM of oxygen as a reaction gas, 2W
When photoresist was etched with an RF power of /cm2, the etching speed did not decrease near the port of the end point monitor. λ The conditions and etching characteristics at this time are shown on the front page. Furthermore, mesh plates were placed at the exhaust port and gas inlet and etched in the same way. Table 3 shows the conditions and etching characteristics at this time. Table 2 Table 3 As described above, by arranging the mesh plate in the etching chamber to obtain symmetry within the chamber, the etching uniformity was improved from 11.3% to 2.1%, and the in-plane etching was improved. [Effects of the Invention] As described above, according to the present invention, by arranging a mesh plate in the etching chamber to obtain symmetry within the chamber, the reaction This solves the problem that when the symmetry of the chamber wall surface changes, the uniformity of etching drops drastically and affects the etching shape within the plane. It was possible to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method that do not affect the etching shape etc. in the mesh plate 108...Mesh plate 109...Quartz

[Brief explanation of drawings]

FIG. 1 is a configuration diagram showing an embodiment of a semiconductor device manufacturing apparatus of the present invention. FIG. 2 is a configuration diagram showing an embodiment of the semiconductor device manufacturing apparatus of the present invention. FIG. 3 is a configuration diagram showing an embodiment of a conventional semiconductor device manufacturing apparatus.

Claims (1)

[Claims] (1) In a semiconductor device manufacturing apparatus that etches the semiconductor device by keeping the reaction chamber in vacuum and introducing a reaction gas,
A semiconductor device manufacturing apparatus characterized in that a mesh member made of the same material as the reaction chamber is provided in an asymmetrical portion of the reaction chamber.