JPH03219071A - Vapor-deposition boat and vapor-deposition device using the boat - Google Patents
Vapor-deposition boat and vapor-deposition device using the boatInfo
- Publication number
- JPH03219071A JPH03219071A JP1279290A JP1279290A JPH03219071A JP H03219071 A JPH03219071 A JP H03219071A JP 1279290 A JP1279290 A JP 1279290A JP 1279290 A JP1279290 A JP 1279290A JP H03219071 A JPH03219071 A JP H03219071A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- vapor deposition
- vapor
- outer edge
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000013459 approach Methods 0.000 claims description 7
- 238000005019 vapor deposition process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 18
- 230000008021 deposition Effects 0.000 abstract description 7
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000011364 vaporized material Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000951471 Citrus junos Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（）既要）
主に半導体装置表面において、電極等の金属部を形成す
る際に適用する真空蒸着技術に関し、蒸着物の飛散方向
が偏らない蒸着用ボートと、蒸着する基板の位置によっ
て、大きな蒸着物膜厚差の発生しない蒸着装置を提供す
ることを目的とし、
円形をした外縁に沿って設けられた外縁底部と、該外縁
底部を底辺とする、中空状の凸部の表面によって底面を
構成し、該凸部の水平断面は円形であり、且つその内径
は該凸部の頂部に近づく程小さく形成されており、前記
底面の厚みは、前記外縁底部から該凸部の頂部に近づく
程薄く形成されているように蒸着用ボートを構成する。Detailed Description of the Invention () Already required) This invention relates to a vacuum evaporation technique applied to form metal parts such as electrodes mainly on the surface of a semiconductor device, and relates to a evaporation boat in which the direction of scattering of the evaporated material is not biased, and a evaporation boat for evaporation The purpose of the present invention is to provide a vapor deposition apparatus that does not cause a large difference in the thickness of the vapor deposited material depending on the position of the substrate. The surface of the convex portion constitutes a bottom surface, the horizontal cross section of the convex portion is circular, and the inner diameter thereof is formed to become smaller as it approaches the top of the convex portion, and the thickness of the bottom surface is the same as that from the bottom of the outer edge to the bottom surface of the convex portion. The vapor deposition boat is configured to be thinner as it approaches the top of the convex portion.
本発明は主に半導体装置表面において、電極等の金属部
を形成する際に通用する真空蒸着技術に関する。The present invention mainly relates to a vacuum evaporation technique that is commonly used in forming metal parts such as electrodes on the surface of a semiconductor device.
近年の半導体装置の高信頼性の要求や生産効率の向上の
要求に伴い、蒸着装置内に複数の基板を配置して、その
複数の基板に対して蒸着を施すことが行われている。そ
してこの蒸着工程において、複数の基板に対し蒸着膜厚
が均一となるように蒸着処理を行う必要がある。2. Description of the Related Art With the recent demands for high reliability of semiconductor devices and for improved production efficiency, a plurality of substrates are arranged in a vapor deposition apparatus and vapor deposition is performed on the plurality of substrates. In this vapor deposition process, it is necessary to perform the vapor deposition process on a plurality of substrates so that the thickness of the vapor deposited film becomes uniform.
（従来の技術〕
第３図は従来の蒸着装置を示す断面図であり、１４は蒸
着物、１０は蒸着物１４を入れる蒸着用ポート、１１は
内部で蒸着処理を行うための成長容器、１２は前記蒸着
物１４に対し対向配置された基板、１３は基板１２を積
載するステージ、１５は１着用ボート１０に電流を流す
ための電流供給端子である。また成長容器ｌｌ内は高真
空となっており、被蒸着物である基板１２は、成長容器
１１内部上方に設けられているステージ１３に積載され
ている。また成長容器１１内部下方に設けられた蒸着用
ボート１０には、アルミニウム等の蒸着物１４が積載さ
れている。(Prior Art) FIG. 3 is a sectional view showing a conventional vapor deposition apparatus, in which 14 is a vapor deposited material, 10 is a vapor deposition port into which the vapor deposited material 14 is placed, 11 is a growth container for performing vapor deposition processing inside, and 12 is a sectional view showing a conventional vapor deposition apparatus. 13 is a stage on which the substrate 12 is loaded, and 15 is a current supply terminal for supplying current to the first loading boat 10. Also, the inside of the growth container 11 is in a high vacuum. A substrate 12, which is an object to be evaporated, is loaded on a stage 13 provided above inside the growth container 11. Also, a evaporation boat 10 provided below inside the growth container 11 is loaded with a material such as aluminum. A deposit 14 is loaded.
本蒸着装置において、電流供給端子Ｉ５より蒸着用ボー
トＩＯに電流を流すと、蒸着用ボート１０は加熱されて
蒸着物１４は溶解を始める。そして蒸着用ボート１０の
加熱が更に進行すると、溶解した蒸着物１４は蒸発を始
めて真空中に飛散する。この際に蒸着用ポート１０上方
に存在する基板１２において、蒸着が行われる。In this vapor deposition apparatus, when a current is passed through the vapor deposition boat IO from the current supply terminal I5, the vapor deposition boat 10 is heated and the vapor deposit 14 begins to melt. As the heating of the vapor deposition boat 10 further progresses, the melted vapor deposit 14 begins to evaporate and scatters into the vacuum. At this time, vapor deposition is performed on the substrate 12 located above the vapor deposition port 10.
〔発明が解決しようとする課題］
蒸着用ボー１−１０は多くの場合、成長容器１１の下方
中央部に設けられる。そして蒸着用ボート１０より蒸発
した蒸着物は、その多くが蒸着用ボート１０の直上方向
へと飛散していく（第３図矢印）。このため必然的にス
テージ１３周辺部に積載した基板よりも、ステージ１３
中央部に積載した基板の方が蒸着物膜厚が厚くなるとい
う現象が発生した。[Problems to be Solved by the Invention] In many cases, the deposition chamber 1-10 is provided at the lower center of the growth container 11. Most of the vapor deposited from the vapor deposition boat 10 scatters directly above the vapor deposition boat 10 (arrow in FIG. 3). For this reason, it is inevitable that the stage 13
A phenomenon occurred in which the thickness of the deposited film was thicker on the substrates loaded in the center.
実際、縦横２０Ｘ３０ｃｍの大きさを持つステージ１３
上に複数の基板１２を積載し、該ステージ１３の下方２
０ｃｍの位置に蒸着用ボートを設置した蒸着装置におい
て試験的に蒸着処理を行ったところ、ステージ１３の中
央部に積載した基板と外縁に積載した基板とでは、２０
〜３０％もの蒸着物膜厚差が発生した。In fact, stage 13 has a size of 20 x 30 cm in length and width.
A plurality of substrates 12 are loaded on the stage 13, and the lower part 2 of the stage 13 is
When a trial vapor deposition process was performed in a vapor deposition apparatus with a vapor deposition boat installed at a position of 0 cm, the difference between the substrates loaded at the center of the stage 13 and the substrates loaded at the outer edge was 20 cm.
A difference in deposit film thickness of ~30% occurred.
この現象は蒸着用ボート１０の外縁の形にも左右される
。例えば蒸着用ボート１０の外縁が長方形であるならば
、その長辺方向と短辺方向とでは薄着物の７１１！敗量
に差が発生するため、それに応じてステージ１３上の基
板１２においても蒸着物膜厚に差が発生するのである。This phenomenon also depends on the shape of the outer edge of the deposition boat 10. For example, if the outer edge of the vapor deposition boat 10 is rectangular, the length of the long side and the short side of the thin kimono are 711! Since there is a difference in the amount of loss, a corresponding difference also occurs in the thickness of the deposit on the substrate 12 on the stage 13.
また生産効率向上のために成長容器を大型化すると、ス
テージ１３上における中央部から周辺部までの距離は更
に長くなり、ステージ１３上の位置による基板１２の蒸
着物膜厚差は更に拡大した。Furthermore, when the size of the growth container was increased in order to improve production efficiency, the distance from the center to the periphery on the stage 13 became even longer, and the difference in the thickness of the deposited material on the substrate 12 depending on the position on the stage 13 further expanded.
蒸着用ボー）１０の外縁の形による蒸着物膜厚差は、蒸
着用ボートの外縁を円形とすることで解消することは可
能である。しかしステージ１３中央部と周辺部における
、基板の蒸着物膜厚差を解消することは困難であった。The difference in the thickness of the deposit due to the shape of the outer edge of the evaporation boat 10 can be resolved by making the outer edge of the evaporation boat circular. However, it has been difficult to eliminate the difference in the thickness of the deposited material on the substrate between the central part and the peripheral part of the stage 13.
このため蒸着物膜圧を正確にコントロールするためには
、基板１２ををステージ１３中央部に積載しなければな
らず、これは生産効率の点からも大きな問題であった。Therefore, in order to accurately control the film thickness of the deposit, the substrate 12 must be loaded at the center of the stage 13, which is a big problem from the point of view of production efficiency.
本発明は、蒸着物の飛散方向が偏らない蒸着用ボートと
、蒸着する基板の位置によって、大きな蒸着物膜厚差の
発生しない蒸着装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a deposition boat in which the scattering direction of deposits is not biased, and a deposition apparatus in which large differences in the thickness of deposits do not occur depending on the position of a substrate to be deposited.
（課題を解決するための手段）
本発明は上記課題を解決するために、円形をした外縁に
沿って設けられた外縁底部と、該外縁底部を底辺とする
、中空状の凸部の表面によって底面を構成し、該凸部の
水平断面は円形であり、且つその内径は該凸部の頂部に
近づく程小さく形成されており、前記底面の厚みは、前
記外縁底部から該凸部の頂部に近づく程薄く形成されて
いるように蒸着用ボートを構成する。(Means for Solving the Problems) In order to solve the above problems, the present invention has an outer edge bottom provided along a circular outer edge, and a surface of a hollow convex portion having the outer edge bottom as a base. The convex portion constituting the bottom surface has a circular horizontal cross-section, and the inner diameter thereof becomes smaller as it approaches the top of the convex portion, and the thickness of the bottom surface increases from the bottom of the outer edge to the top of the convex portion. The boat for vapor deposition is constructed so that it is formed thinner as it gets closer.
また、内部で蒸着処理を行うための成長容器と、該成長
容器内下部に設けられた前記蒸着用ボートと、該蒸着用
ボートに電流を流すための電流供給端子と、該成長容器
内上部において該蒸着用ボートに対向配置された、基板
を積載するステージとを有するように蒸着装置を構成す
る。Further, a growth vessel for performing a vapor deposition process inside, the vapor deposition boat provided in the lower part of the growth vessel, a current supply terminal for passing a current to the vapor deposition boat, and a current supply terminal in the upper part of the growth vessel. A vapor deposition apparatus is configured to include a stage on which a substrate is loaded, which is placed opposite to the vapor deposition boat.
〔作用］
本発明における蒸着用ボートは円形をした外縁内におい
て、内側向きの斜面或いは曲面からなる表面を持ち、且
つその水平断面は円である中空状の凸部を有しており、
この凸部の表面が該蒸着用ボートの底面を構成している
。また更に、高融点金属よりなるこの蒸着用ボートの表
面の厚みは、凸部の頂部に近づく程薄く形成されている
。[Function] The vapor deposition boat of the present invention has a hollow convex portion within the circular outer edge, which has an inwardly facing slope or curved surface, and whose horizontal cross section is a circle.
The surface of this convex portion constitutes the bottom surface of the vapor deposition boat. Furthermore, the surface thickness of this vapor deposition boat made of a high melting point metal is formed to be thinner as it approaches the top of the convex portion.
このため本発明における蒸着用ボートを用いた蒸着装置
において、電流供給端子から該薄着用ポートに電流を流
して該蒸着用ボートを加熱すると、積載したアルミニウ
ム等の蒸着物は溶解を始めて該蒸着用ボートの外縁と凸
部の表面との間に溜まる。そしてこの際に該蒸着物は、
その表面張力と該表面の傾斜のために、該表面上を頂部
に向かって薄く拡がることになる。また表面では、凸部
を形成する厚みが頂部に向かう程薄いため、頂部に向か
う程表面の温度は高温となる。従って蒸着物は、表面張
力で薄く拡がった部分より蒸発していく。Therefore, in the evaporation apparatus using the evaporation boat of the present invention, when the evaporation boat is heated by passing a current from the current supply terminal to the thin deposition port, the deposited material such as aluminum starts to melt and the evaporation boat is heated. Collects between the outer edge of the boat and the surface of the convexity. At this time, the vapor deposited material is
Because of its surface tension and the slope of the surface, it will spread thinly over the surface toward the top. Further, on the surface, the thickness of the convex portion becomes thinner toward the top, so the temperature of the surface becomes higher toward the top. Therefore, the deposit evaporates from the thinly spread part due to surface tension.
この際に蒸発した蒸着物は、表面の有する傾斜角度のた
めにやや外寄りに、初速を持って飛散していくのである
。The deposits evaporated at this time scatter slightly outward with an initial velocity due to the inclination angle of the surface.
このため蒸着用ボート上方に設置されたステージにおい
て、従来のようにステージ中央部に積載された基板が集
中的に蒸着されることがな（なり、ステージ上の積載位
置による基板の蒸着物膜厚差は、従来に比べて大幅に改
善されるのである。For this reason, on the stage installed above the deposition boat, the substrates loaded in the center of the stage are not intensively deposited as in the past (this means that the thickness of the deposited material on the substrate depends on the loading position on the stage). The difference is significantly improved compared to the conventional method.
第１図は本発明の蒸着用ボートの一実施例を示す説明図
であり、同図（ａ）はその上面図、同図（ｂ）は同図（
ａ）のｘ−ｘ’ における断面図である。FIG. 1 is an explanatory diagram showing an embodiment of the vapor deposition boat of the present invention, in which (a) is a top view and (b) is a top view of the boat (a).
FIG. 3 is a sectional view taken along line xx' of a).
図中１は外縁、１ａは外縁底部、２は凸部であって、２
ａ、２ｂはそれぞれ該凸部２の表面と頂部である。また
３は、蒸着装置の電流供給端子に接続する支持部である
。In the figure, 1 is the outer edge, 1a is the bottom of the outer edge, 2 is the convex part, and 2
a and 2b are the surface and top of the convex portion 2, respectively. Moreover, 3 is a support part connected to the current supply terminal of the vapor deposition apparatus.
本実施例の蒸着用ボートは、外縁１内側において円錐形
状の凸部２を有しており、その表面２ａの厚みは頂部２
ｂに近づくにつれて薄く形成されている。またその外縁
１は円形をしているが、その両端には支持部３が形成さ
れている。支持部３は蒸着装置内において電流供給端子
に接続され、蒸着用ボートを支えると共に該蒸着用ボー
トに電流を流すものである。The vapor deposition boat of this example has a conical convex portion 2 on the inside of the outer edge 1, and the thickness of the surface 2a is equal to the thickness of the top portion 2.
It becomes thinner as it approaches b. Further, the outer edge 1 is circular, and support portions 3 are formed at both ends thereof. The support part 3 is connected to a current supply terminal in the vapor deposition apparatus, and supports the vapor deposition boat and allows current to flow through the vapor deposition boat.
また第２図は本発明の蒸着装置の一実施例を示す断面図
であり、第３図と同一のものは同一の符号で示している
。Further, FIG. 2 is a sectional view showing an embodiment of the vapor deposition apparatus of the present invention, and the same parts as in FIG. 3 are indicated by the same symbols.
本実施例は、そのステージ１３の大きさが例えば縦横２
０Ｘ３０ｃｍであり、例えば該ステージ１３の下方２０
ｃｍの位置に本実施例の蒸着用ボートを配置するもので
ある。In this embodiment, the size of the stage 13 is, for example, 2 in length and width.
0x30cm, for example, 20 cm below the stage 13.
The vapor deposition boat of this example is placed at a position of cm.
蒸着用ボートを構成する材料は例えばタングステンであ
り、円形をした外縁１の直径は例えば約３０ｍｍ、外縁
底部１ａ及び外縁１において、その厚みは例えば約Ｑ、
５ｍｍ、同中央部２ｂでの厚みは例えば約Ｑ、３ｍｍで
ある。また本実施例における蒸着装置では、蒸着用ボー
トの外縁１と凸部表面２ａとがなす角を７０〜７５°と
するのが適当であった。The material constituting the vapor deposition boat is, for example, tungsten, the diameter of the circular outer edge 1 is, for example, about 30 mm, and the thickness of the outer edge bottom 1a and the outer edge 1 is, for example, about Q,
5 mm, and the thickness at the central portion 2b is, for example, approximately Q, 3 mm. Furthermore, in the vapor deposition apparatus of this example, it was appropriate that the angle between the outer edge 1 of the vapor deposition boat and the convex surface 2a be 70 to 75 degrees.
本実施例の蒸着装置では、蒸着用ボートの有する凸部の
ために、蒸着物はやや外寄りに飛散していく（第２図矢
印）。このため本実施例では、ステージ１３上における
基板の位置によって、基板の薄着物膜厚に大きな差はで
ないのである。In the vapor deposition apparatus of this embodiment, the vapor deposited material is scattered slightly outward due to the convex portion of the vapor deposition boat (arrow in FIG. 2). Therefore, in this embodiment, there is no large difference in the thickness of the thin film on the substrate depending on the position of the substrate on the stage 13.
他の実施例の説明
上述の実施例では凸部を円錐形状に形成しているが、こ
れは内径が円であり、且つ内側向きの斜面或いは曲面よ
りなる表面を有する凸部であるならば他の形状でもよく
、例えば凸部頂部付近に水平面が形成されたものや、或
いは凸部が半球形であっても良い。DESCRIPTION OF OTHER EMBODIMENTS In the above-mentioned embodiments, the convex portion is formed into a conical shape. For example, a horizontal surface may be formed near the top of the convex portion, or the convex portion may be hemispherical.
上述の実施例では第１図の如く、凸部の頂部を外縁より
も高い位置としているが、これは多少低い位置であって
も何ら問題は無い。In the above-mentioned embodiment, as shown in FIG. 1, the top of the convex portion is placed at a higher position than the outer edge, but there is no problem even if the top is placed at a somewhat lower position.
或いは上述の実施例では、外縁底部を介して外縁と凸部
表面はほぼ連続しているが、外縁底部をより広くとり、
外縁と凸部表面との間をより広くしても構わない。Alternatively, in the above embodiment, the outer edge and the convex surface are almost continuous through the outer edge bottom, but the outer edge bottom is wider,
The distance between the outer edge and the surface of the convex portion may be made wider.
また上述の実施例では、蒸着用ポートの形成材料として
タングステンを用いているが、これは高融点金属であれ
ば他の材料であってもよく、例えばモリブデンやカーボ
ンであっても良い。Furthermore, in the above-described embodiments, tungsten is used as the material for forming the vapor deposition port, but it may be any other material as long as it is a high melting point metal, such as molybdenum or carbon.
以上本発明を実施例により説明したが、本発明は本発明
の趣旨に従って種々の変形が可能であり、本発明よりこ
れらを排除するものではない。Although the present invention has been described above with reference to Examples, the present invention can be modified in various ways according to the spirit of the present invention, and these modifications are not excluded from the present invention.
以上説明したように本発明よれば、蒸着物を外寄りに飛
散させることができるという効果を奏する。As explained above, according to the present invention, there is an effect that the deposit can be scattered outward.
従って、ステージ中央部に積載された基板が集中的に蒸
着されるということがなくなるために、ステージ上の位
置による基板の蒸着物膜厚差が大幅に改善されることか
ら、係わる半導体装置の性能向上に寄与するところが大
きい。Therefore, since the substrates loaded at the center of the stage are no longer intensively deposited, the difference in the thickness of the deposited material depending on the position on the stage is greatly improved, which improves the performance of the semiconductor device involved. It greatly contributes to improvement.
第１図は本発明の蒸着用ボートの一実施例を示す説明図
、
第２図は本発明の蒸着装置の一実施例を示す断面図、
第３図は従来の蒸着装置を示す断面図である。
図中、■、。
１ａ。
２、。
２ａ。
２ｂ。
３、。
１１、。
外縁１
、外縁底部、
凸部１
、表面１
、頂部、
支持部、
成長容器、
■ ２゜
１３゜
１４゜
１５゜
基板、
ステージ、
蒸着物、
電流供給端子。
（’ｌ） ヱ［有］ 図
（１）） 肘面！
Ｘイじ 日８の − ′埠？方七ｔ・ゆりｔ 元亨ヒｑ
ｔｉａロ第 １ 図
、本今四のＸ漏装置ｎ−営方ａ分・ｊｔ示亨町面図勇
図
従来Ｌｆ）策羞袈！をティを面図
第
図Fig. 1 is an explanatory diagram showing an embodiment of the vapor deposition boat of the present invention, Fig. 2 is a sectional view showing an embodiment of the vapor deposition apparatus of the present invention, and Fig. 3 is a sectional view showing a conventional vapor deposition apparatus. be. In the figure, ■. 1a. 2. 2a. 2b. 3. 11. Outer edge 1, outer edge bottom, convex part 1, surface 1, top, support part, growth container, ■2゜13゜14゜15゜substrate, stage, vapor deposit, current supply terminal. ('l) ヱ [Existence] Figure (1)) Elbow surface! X-Iji Day 8 - 'Bu? Houshichi t, Yuri t Motoheiq
tiaro Figure 1, this fourth X-leakage device n-way a minute, jt showing the town view Yuzu conventional Lf) trick! The tee diagram
Claims (1)
（１ａ）と、 該外縁底部（１ａ）を底辺とする、中空状の凸部（２）
の表面（２ａ）によって底面を構成し、該凸部（２）の
水平断面は円形であり、且つその内径は該凸部（２）の
頂部（２ｂ）に近づく程小さく形成されており、 前記底面の厚みは、前記外縁底部（１ａ）から該凸部（
２）の頂部（２ｂ）に近づく程薄く形成されていること
を特徴とする蒸着用ボート。 ２．内部で蒸着処理を行うための成長容器 （１１）と、 該成長容器（１１）内下部に設けられた、請求項１記載
の蒸着用ボートと、 該蒸着用ボートに電流を流すための電流供給端子（１５
）と、 該成長容器（１１）内上部において該蒸着用ボートに対
向配置された、基板（１２）を積載するステージ（１３
）とを有することを特徴とする蒸着装置。[Claims] 1. An outer edge bottom (1a) provided along the circular outer edge (1), and a hollow convex portion (2) with the outer edge bottom (1a) as the base.
The surface (2a) of the convex portion (2) constitutes a bottom surface, the horizontal cross section of the convex portion (2) is circular, and the inner diameter thereof becomes smaller as it approaches the top (2b) of the convex portion (2); The thickness of the bottom surface is determined from the outer edge bottom (1a) to the convex portion (
2) A vapor deposition boat characterized by being thinner as it approaches the top (2b). 2. A growth vessel (11) for performing a vapor deposition process therein; a vapor deposition boat according to claim 1 provided at a lower portion inside the growth vessel (11); and a current supply for passing current through the vapor deposition boat. Terminal (15
), and a stage (13) on which the substrate (12) is loaded, which is disposed in the upper part of the growth container (11) and facing the vapor deposition boat.
) A vapor deposition apparatus comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1279290A JPH03219071A (en) | 1990-01-23 | 1990-01-23 | Vapor-deposition boat and vapor-deposition device using the boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1279290A JPH03219071A (en) | 1990-01-23 | 1990-01-23 | Vapor-deposition boat and vapor-deposition device using the boat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03219071A true JPH03219071A (en) | 1991-09-26 |
Family
ID=11815250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1279290A Pending JPH03219071A (en) | 1990-01-23 | 1990-01-23 | Vapor-deposition boat and vapor-deposition device using the boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03219071A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0594263U (en) * | 1992-05-18 | 1993-12-24 | 電気化学工業株式会社 | Evaporation heater |
| JP2015110812A (en) * | 2013-12-06 | 2015-06-18 | スタンレー電気株式会社 | Method of manufacturing lead compound thin film, and crucible |
-
1990
- 1990-01-23 JP JP1279290A patent/JPH03219071A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0594263U (en) * | 1992-05-18 | 1993-12-24 | 電気化学工業株式会社 | Evaporation heater |
| JP2015110812A (en) * | 2013-12-06 | 2015-06-18 | スタンレー電気株式会社 | Method of manufacturing lead compound thin film, and crucible |
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